TW283206B - - Google Patents

Info

Publication number
TW283206B
TW283206B TW084108603A TW84108603A TW283206B TW 283206 B TW283206 B TW 283206B TW 084108603 A TW084108603 A TW 084108603A TW 84108603 A TW84108603 A TW 84108603A TW 283206 B TW283206 B TW 283206B
Authority
TW
Taiwan
Application number
TW084108603A
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Application granted granted Critical
Publication of TW283206B publication Critical patent/TW283206B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
    • G01P3/42—Devices characterised by the use of electric or magnetic means
    • G01P3/44—Devices characterised by the use of electric or magnetic means for measuring angular speed
    • G01P3/48—Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage
    • G01P3/481—Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage of pulse signals
    • G01P3/488—Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage of pulse signals delivered by variable reluctance detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/465—Arrangements for demagnetisation of heads

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
TW084108603A 1994-08-28 1995-08-17 TW283206B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94202458 1994-08-28

Publications (1)

Publication Number Publication Date
TW283206B true TW283206B (zh) 1996-08-11

Family

ID=8217144

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084108603A TW283206B (zh) 1994-08-28 1995-08-17

Country Status (6)

Country Link
US (1) US5600297A (zh)
EP (1) EP0725936A1 (zh)
JP (1) JPH09505177A (zh)
MY (1) MY113192A (zh)
TW (1) TW283206B (zh)
WO (1) WO1996007926A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420128B (zh) * 2011-10-28 2013-12-21 Isentek Inc 磁感測裝置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5712612A (en) * 1996-01-02 1998-01-27 Hewlett-Packard Company Tunneling ferrimagnetic magnetoresistive sensor
JPH09329463A (ja) * 1996-06-10 1997-12-22 Mitsubishi Electric Corp 検出装置
WO1997047982A2 (en) * 1996-06-12 1997-12-18 Philips Electronics N.V. A magneto-resistive magnetic field sensor
US5705973A (en) * 1996-08-26 1998-01-06 Read-Rite Corporation Bias-free symmetric dual spin valve giant magnetoresistance transducer
EP0880711B1 (en) * 1996-12-04 2006-08-09 Koninklijke Philips Electronics N.V. Device for detecting a magnetic field
TW369649B (en) * 1997-02-20 1999-09-11 Koninkl Philips Electronics Nv Single-channel magnetoresistive magnetic head and device including such a magnetic head
US6747854B1 (en) 1997-02-20 2004-06-08 Koninklijke Philips Electronics N.V. Multi-channel magnetic head with magnetoresistive elements
US5856763A (en) * 1997-03-05 1999-01-05 Motorola Inc. Dual frequency voltage controlled oscillator
US6472868B1 (en) * 1998-08-05 2002-10-29 Minebea Co., Ltd. Magnetic impedance element having at least two thin film-magnetic cores
US6171693B1 (en) * 1998-10-27 2001-01-09 The United States Of America As Represented By The Secretary Of The Navy Structures with improved magnetic characteristics for giant magneto-resistance applications
WO2000079297A1 (en) * 1999-06-18 2000-12-28 Koninklijke Philips Electronics N.V. Method for manufacturing a magnetic sensor device
DE10149737A1 (de) 2001-10-09 2003-04-24 Infineon Technologies Ag Halbleiterspeicher mit sich kreuzenden Wort- und Bitleitungen, an denen magnetoresistive Speicherzellen angeordnet sind
JP2004165451A (ja) * 2002-11-13 2004-06-10 Sony Corp 磁気記憶素子及び磁気記憶素子の記録方法
US7002194B2 (en) * 2003-07-18 2006-02-21 International Business Machines Corporation Via AP switching
US20080275284A1 (en) * 2004-04-16 2008-11-06 Marathon Oil Company Process for converting gaseous alkanes to liquid hydrocarbons
US20080273381A1 (en) * 2005-03-01 2008-11-06 Siu-Tat Chui Method for Switching Random Access Memory Elements and Magnetic Element Structures
WO2007106071A2 (en) * 2006-03-01 2007-09-20 University Of Delaware Method for switching magnetic random access memory elements and magnetic element structures
US20070263430A1 (en) * 2006-05-15 2007-11-15 Siu-Tat Chui Method for switching magnetic random access memory elements and magnetic element structures
WO2007126164A1 (en) * 2006-04-28 2007-11-08 Microgate, Inc. Thin film 3 axis fluxgate and the implementation method thereof
US9840781B2 (en) 2014-12-02 2017-12-12 Texas Instruments Incorporated Process for NiFe fluxgate device
WO2017117131A1 (en) * 2015-12-28 2017-07-06 The University Of Florida Research Foundation, Inc. Low ohmic loss superlattice conductors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3382448A (en) * 1964-10-29 1968-05-07 Sperry Rand Corp Magnetoresistive amplifier
FR2248566B1 (zh) * 1973-10-23 1976-11-19 Cii
CH651151A5 (de) * 1979-11-27 1985-08-30 Landis & Gyr Ag Messwandler zum messen eines insbesondere von einem messstrom erzeugten magnetfeldes.
DE3750799T2 (de) * 1986-09-10 1995-05-04 Canon K.K., Tokio/Tokyo Übertragungsaufzeichnungsmaterial und Herstellungsverfahren.
JP2790811B2 (ja) * 1988-04-20 1998-08-27 シャープ株式会社 薄膜磁気ヘッド
JPH03151231A (ja) * 1989-10-13 1991-06-27 Internatl Business Mach Corp <Ibm> 多層ひずみ格子銅酸化物ペロブスカイト構造体
JP2690623B2 (ja) * 1991-02-04 1997-12-10 松下電器産業株式会社 磁気抵抗効果素子
US5304975A (en) * 1991-10-23 1994-04-19 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetoresistance effect sensor
JPH0697532A (ja) * 1992-02-07 1994-04-08 Hitachi Maxell Ltd 磁気抵抗効果素子
EP0672303B1 (en) * 1993-10-06 1997-12-03 Koninklijke Philips Electronics N.V. Magneto-resistance device, and magnetic head employing such a device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420128B (zh) * 2011-10-28 2013-12-21 Isentek Inc 磁感測裝置

Also Published As

Publication number Publication date
WO1996007926A1 (en) 1996-03-14
EP0725936A1 (en) 1996-08-14
MY113192A (en) 2001-12-31
JPH09505177A (ja) 1997-05-20
US5600297A (en) 1997-02-04

Similar Documents

Publication Publication Date Title
BR9508234A (zh)
ITRM950766A0 (zh)
DK0677466T3 (zh)
EP0666525A3 (zh)
EP0669395A3 (zh)
EP0669187A3 (zh)
TW283206B (zh)
EP0666470A3 (zh)
EP0667387A3 (zh)
DE69535748D1 (zh)
TW273055B (zh)
ITRM950745A0 (zh)
TW287261B (zh)
TW257718B (zh)
TW286403B (zh)
ECSMU940035U (zh)
IN181385B (zh)
ECSDI940198S (zh)
ECSDI940213S (zh)
ECSDI940192S (zh)
IN181647B (zh)
BRPI9401073A2 (zh)
IN182735B (zh)
EP0662420A3 (zh)
ECSMU940030U (zh)