TW280915B - - Google Patents

Info

Publication number
TW280915B
TW280915B TW084114025A TW84114025A TW280915B TW 280915 B TW280915 B TW 280915B TW 084114025 A TW084114025 A TW 084114025A TW 84114025 A TW84114025 A TW 84114025A TW 280915 B TW280915 B TW 280915B
Authority
TW
Taiwan
Application number
TW084114025A
Original Assignee
Hyunda Electronics Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyunda Electronics Ind Co Ltd filed Critical Hyunda Electronics Ind Co Ltd
Application granted granted Critical
Publication of TW280915B publication Critical patent/TW280915B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Dram (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Read Only Memory (AREA)
TW084114025A 1994-12-31 1995-12-28 TW280915B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940040581A KR0137693B1 (ko) 1994-12-31 1994-12-31 셀프 부스트랩 장치

Publications (1)

Publication Number Publication Date
TW280915B true TW280915B (zh) 1996-07-11

Family

ID=19406218

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084114025A TW280915B (zh) 1994-12-31 1995-12-28

Country Status (7)

Country Link
US (1) US5973345A (zh)
JP (1) JP3058250B2 (zh)
KR (1) KR0137693B1 (zh)
CN (1) CN1047866C (zh)
DE (1) DE19600049B4 (zh)
GB (1) GB2296820B (zh)
TW (1) TW280915B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7227170B2 (en) * 2003-03-10 2007-06-05 Energy Conversion Devices, Inc. Multiple bit chalcogenide storage device
US10395035B2 (en) * 2016-09-27 2019-08-27 Intel Corporation Photon emission attack resistance driver circuits

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3714525A (en) * 1970-03-02 1973-01-30 Gen Electric Field-effect transistors with self registered gate which acts as diffusion mask during formation
JPS5250182A (en) * 1975-10-21 1977-04-21 Toshiba Corp Semiconductor device
US4185319A (en) * 1978-10-04 1980-01-22 Rca Corp. Non-volatile memory device
JPS577162A (en) * 1980-06-17 1982-01-14 Toshiba Corp Nonvolatile semiconductor memory and manufacture therefor
JPS57133677A (en) * 1981-02-12 1982-08-18 Mitsubishi Electric Corp Semiconductor integrated circuit device
US4620299A (en) * 1985-03-04 1986-10-28 Motorola, Inc. Row decoder
US5140392A (en) * 1990-03-05 1992-08-18 Fujitsu Limited High voltage mos transistor and production method thereof, and semiconductor device having high voltage mos transistor and production method thereof
JP2786307B2 (ja) * 1990-04-19 1998-08-13 三菱電機株式会社 電界効果トランジスタ及びその製造方法
JP2926969B2 (ja) * 1990-04-26 1999-07-28 富士電機株式会社 Ｍｉｓ型電界効果トランジスタを有する半導体装置
JPH07123145B2 (ja) * 1990-06-27 1995-12-25 株式会社東芝 半導体集積回路
JPH06260639A (ja) * 1993-03-04 1994-09-16 Fuji Electric Co Ltd Ｍｏｓｆｅｔ

Also Published As

Publication number Publication date
US5973345A (en) 1999-10-26
JPH08340050A (ja) 1996-12-24
DE19600049A1 (de) 1996-07-04
CN1047866C (zh) 1999-12-29
JP3058250B2 (ja) 2000-07-04
GB2296820B (en) 1999-07-14
KR0137693B1 (ko) 1998-06-15
GB9526692D0 (en) 1996-02-28
CN1135080A (zh) 1996-11-06
DE19600049B4 (de) 2005-12-15
GB2296820A (en) 1996-07-10
KR960027325A (ko) 1996-07-22

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees