TW279992B - - Google Patents

Info

Publication number
TW279992B
TW279992B TW082106906A TW82106906A TW279992B TW 279992 B TW279992 B TW 279992B TW 082106906 A TW082106906 A TW 082106906A TW 82106906 A TW82106906 A TW 82106906A TW 279992 B TW279992 B TW 279992B
Authority
TW
Taiwan
Application number
TW082106906A
Other languages
Chinese (zh)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW279992B publication Critical patent/TW279992B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics
    • H01G4/1209Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Insulating Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
TW082106906A 1992-05-29 1993-08-26 TW279992B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89150892A 1992-05-29 1992-05-29

Publications (1)

Publication Number Publication Date
TW279992B true TW279992B (OSRAM) 1996-07-01

Family

ID=25398315

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082106906A TW279992B (OSRAM) 1992-05-29 1993-08-26

Country Status (5)

Country Link
US (1) US6432473B1 (OSRAM)
EP (1) EP0571949A1 (OSRAM)
JP (1) JPH06112432A (OSRAM)
KR (1) KR930024168A (OSRAM)
TW (1) TW279992B (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0661244A3 (en) * 1993-09-28 1996-09-11 Texas Instruments Inc Manufacture of thin film materials.
JPH1050960A (ja) * 1996-07-26 1998-02-20 Texas Instr Japan Ltd 強誘電体キャパシタ及び強誘電体メモリ装置と、これらの製造方法
TW531803B (en) * 2000-08-31 2003-05-11 Agere Syst Guardian Corp Electronic circuit structure with improved dielectric properties
KR20020079045A (ko) * 2001-04-12 2002-10-19 김상섭 누설전류 억제 구조의 메모리 소자
JP2014520404A (ja) * 2011-06-20 2014-08-21 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 高誘電率ペロブスカイト材料ならびにその作製および使用方法
KR102778206B1 (ko) * 2021-12-08 2025-03-10 삼성전자주식회사 고유전체 및 그 제조방법, 고유전체 제조에 사용되는 타겟 물질, 고유전체를 포함하는 전자소자 및 이를 포함하는 전자장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3859403A (en) * 1970-04-13 1975-01-07 Sprague Electric Co Process for semiconductive ceramic body
JPS56103532A (en) * 1980-01-11 1981-08-18 Tdk Corp Power supply device
JPS60138730A (ja) * 1983-12-27 1985-07-23 Kyocera Corp 磁気デイスク用基板
EP0205137A3 (en) * 1985-06-14 1987-11-04 E.I. Du Pont De Nemours And Company Dielectric compositions
EP0257653B1 (en) * 1986-08-28 1992-11-04 Kabushiki Kaisha Toshiba High dielectric constant ceramic material and method of manufacturing the same
DE3924803A1 (de) * 1988-07-28 1990-02-01 Murata Manufacturing Co Dielektrische keramische zusammensetzung
KR940006708B1 (ko) * 1989-01-26 1994-07-25 세이꼬 엡슨 가부시끼가이샤 반도체 장치의 제조 방법
US5258338A (en) * 1990-01-11 1993-11-02 Mra Laboratories Fine grained BaTiO3 powder mixture and method for making

Also Published As

Publication number Publication date
EP0571949A1 (en) 1993-12-01
KR930024168A (ko) 1993-12-22
US6432473B1 (en) 2002-08-13
JPH06112432A (ja) 1994-04-22

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