TW279992B - - Google Patents
Info
- Publication number
- TW279992B TW279992B TW082106906A TW82106906A TW279992B TW 279992 B TW279992 B TW 279992B TW 082106906 A TW082106906 A TW 082106906A TW 82106906 A TW82106906 A TW 82106906A TW 279992 B TW279992 B TW 279992B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Capacitors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Semiconductor Memories (AREA)
- Inorganic Insulating Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89150892A | 1992-05-29 | 1992-05-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW279992B true TW279992B (OSRAM) | 1996-07-01 |
Family
ID=25398315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082106906A TW279992B (OSRAM) | 1992-05-29 | 1993-08-26 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6432473B1 (OSRAM) |
| EP (1) | EP0571949A1 (OSRAM) |
| JP (1) | JPH06112432A (OSRAM) |
| KR (1) | KR930024168A (OSRAM) |
| TW (1) | TW279992B (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0661244A3 (en) * | 1993-09-28 | 1996-09-11 | Texas Instruments Inc | Manufacture of thin film materials. |
| JPH1050960A (ja) * | 1996-07-26 | 1998-02-20 | Texas Instr Japan Ltd | 強誘電体キャパシタ及び強誘電体メモリ装置と、これらの製造方法 |
| TW531803B (en) * | 2000-08-31 | 2003-05-11 | Agere Syst Guardian Corp | Electronic circuit structure with improved dielectric properties |
| KR20020079045A (ko) * | 2001-04-12 | 2002-10-19 | 김상섭 | 누설전류 억제 구조의 메모리 소자 |
| JP2014520404A (ja) * | 2011-06-20 | 2014-08-21 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 高誘電率ペロブスカイト材料ならびにその作製および使用方法 |
| KR102778206B1 (ko) * | 2021-12-08 | 2025-03-10 | 삼성전자주식회사 | 고유전체 및 그 제조방법, 고유전체 제조에 사용되는 타겟 물질, 고유전체를 포함하는 전자소자 및 이를 포함하는 전자장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3859403A (en) * | 1970-04-13 | 1975-01-07 | Sprague Electric Co | Process for semiconductive ceramic body |
| JPS56103532A (en) * | 1980-01-11 | 1981-08-18 | Tdk Corp | Power supply device |
| JPS60138730A (ja) * | 1983-12-27 | 1985-07-23 | Kyocera Corp | 磁気デイスク用基板 |
| EP0205137A3 (en) * | 1985-06-14 | 1987-11-04 | E.I. Du Pont De Nemours And Company | Dielectric compositions |
| EP0257653B1 (en) * | 1986-08-28 | 1992-11-04 | Kabushiki Kaisha Toshiba | High dielectric constant ceramic material and method of manufacturing the same |
| DE3924803A1 (de) * | 1988-07-28 | 1990-02-01 | Murata Manufacturing Co | Dielektrische keramische zusammensetzung |
| KR940006708B1 (ko) * | 1989-01-26 | 1994-07-25 | 세이꼬 엡슨 가부시끼가이샤 | 반도체 장치의 제조 방법 |
| US5258338A (en) * | 1990-01-11 | 1993-11-02 | Mra Laboratories | Fine grained BaTiO3 powder mixture and method for making |
-
1993
- 1993-05-25 EP EP93108424A patent/EP0571949A1/en not_active Withdrawn
- 1993-05-27 KR KR1019930009304A patent/KR930024168A/ko not_active Ceased
- 1993-05-28 JP JP5127339A patent/JPH06112432A/ja active Pending
- 1993-08-26 TW TW082106906A patent/TW279992B/zh active
-
1995
- 1995-06-01 US US08/458,999 patent/US6432473B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0571949A1 (en) | 1993-12-01 |
| KR930024168A (ko) | 1993-12-22 |
| US6432473B1 (en) | 2002-08-13 |
| JPH06112432A (ja) | 1994-04-22 |