TW279987B - The word line driving circuit of mask ROM - Google Patents

The word line driving circuit of mask ROM

Info

Publication number
TW279987B
TW279987B TW084107579A TW84107579A TW279987B TW 279987 B TW279987 B TW 279987B TW 084107579 A TW084107579 A TW 084107579A TW 84107579 A TW84107579 A TW 84107579A TW 279987 B TW279987 B TW 279987B
Authority
TW
Taiwan
Prior art keywords
voltage
word line
output
driving circuit
line driving
Prior art date
Application number
TW084107579A
Other languages
Chinese (zh)
Inventor
Yasuhiko Sekimoto
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19770794A external-priority patent/JP3185553B2/en
Priority claimed from JP13482995A external-priority patent/JPH08306194A/en
Application filed by Yamaha Corp filed Critical Yamaha Corp
Application granted granted Critical
Publication of TW279987B publication Critical patent/TW279987B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Abstract

A word line driving circuit with multiple memory cells is constructed by n-channel metal-oxide semiconductor transistors having the following characteristics: Arrange the memory cell in column and row directions to form memory array; By providing word line signal to the related row decoder and selecting the word line driving circuit inside the mask ROM of the memory unit along the column direction, whose features are: Select the 1st voltage & 2nd voltage to be the driving source voltage of word line and output the source voltage, in which the 1st voltage is higher than the critical value of memory cell and 2nd voltage lower than 1st voltage but higher than critical value; Control method which relates to address changed and control voltage output. Output the 1st voltage at the initial period of row address changed while changing into 2nd voltage and output it before its next changed.
TW084107579A 1994-07-30 1995-07-21 The word line driving circuit of mask ROM TW279987B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19770794A JP3185553B2 (en) 1994-07-30 1994-07-30 Word line drive circuit for mask ROM
JP13482995A JPH08306194A (en) 1995-05-08 1995-05-08 Semiconductor memory

Publications (1)

Publication Number Publication Date
TW279987B true TW279987B (en) 1996-07-01

Family

ID=26468815

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084107579A TW279987B (en) 1994-07-30 1995-07-21 The word line driving circuit of mask ROM

Country Status (2)

Country Link
KR (1) KR100208131B1 (en)
TW (1) TW279987B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8258824B2 (en) 2010-05-24 2012-09-04 Powerforest Technology Corp. Heterodyne dual slope frequency generation method for the load change of power supply
TWI406294B (en) * 2009-04-17 2013-08-21 Vanguard Int Semiconduct Corp Memory and storage device utilizing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100636915B1 (en) * 1999-06-29 2006-10-19 주식회사 하이닉스반도체 Apparatus and method for supplying a wordline boosting signal of semiconductor memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI406294B (en) * 2009-04-17 2013-08-21 Vanguard Int Semiconduct Corp Memory and storage device utilizing the same
US8258824B2 (en) 2010-05-24 2012-09-04 Powerforest Technology Corp. Heterodyne dual slope frequency generation method for the load change of power supply

Also Published As

Publication number Publication date
KR960005622A (en) 1996-02-23
KR100208131B1 (en) 1999-07-15

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