TW272287B - - Google Patents

Info

Publication number
TW272287B
TW272287B TW084103847A TW84103847A TW272287B TW 272287 B TW272287 B TW 272287B TW 084103847 A TW084103847 A TW 084103847A TW 84103847 A TW84103847 A TW 84103847A TW 272287 B TW272287 B TW 272287B
Authority
TW
Taiwan
Application number
TW084103847A
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW272287B publication Critical patent/TW272287B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
TW084103847A 1994-03-30 1995-04-19 TW272287B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6052194A JP3176008B2 (ja) 1994-03-30 1994-03-30 半導体メモリ回路

Publications (1)

Publication Number Publication Date
TW272287B true TW272287B (zh) 1996-03-11

Family

ID=13144708

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084103847A TW272287B (zh) 1994-03-30 1995-04-19

Country Status (5)

Country Link
US (1) US5566113A (zh)
JP (1) JP3176008B2 (zh)
KR (1) KR0159449B1 (zh)
CN (1) CN1041137C (zh)
TW (1) TW272287B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100193898B1 (ko) * 1996-06-29 1999-06-15 김영환 플래쉬 메모리 장치
US5745419A (en) * 1996-07-30 1998-04-28 Hewlett-Packard Co. Method and apparatus for measuring the offset voltages of SRAM sense amplifiers
JPH1074396A (ja) * 1996-08-30 1998-03-17 Nec Corp 半導体記憶装置
JP3489708B2 (ja) * 1996-10-23 2004-01-26 シャープ株式会社 不揮発性半導体記憶装置
US5926422A (en) * 1997-10-02 1999-07-20 Texas Instruments Incorporated Integrated circuit memory device having current-mode data compression test mode
JP4713143B2 (ja) * 2004-12-15 2011-06-29 富士通セミコンダクター株式会社 半導体記憶装置
JP2010020843A (ja) * 2008-07-10 2010-01-28 Toshiba Corp 半導体記憶装置
US9830999B2 (en) * 2014-06-05 2017-11-28 Micron Technology, Inc. Comparison operations in memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0713879B2 (ja) * 1985-06-21 1995-02-15 三菱電機株式会社 半導体記憶装置
KR960002006B1 (ko) * 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
US5335198A (en) * 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
US5414664A (en) * 1993-05-28 1995-05-09 Macronix International Co., Ltd. Flash EPROM with block erase flags for over-erase protection

Also Published As

Publication number Publication date
KR0159449B1 (ko) 1999-02-01
CN1115105A (zh) 1996-01-17
JPH07272492A (ja) 1995-10-20
JP3176008B2 (ja) 2001-06-11
CN1041137C (zh) 1998-12-09
US5566113A (en) 1996-10-15

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