TW271499B - Fabricating process for high-voltage CMOS transistor - Google Patents

Fabricating process for high-voltage CMOS transistor

Info

Publication number
TW271499B
TW271499B TW84107992A TW84107992A TW271499B TW 271499 B TW271499 B TW 271499B TW 84107992 A TW84107992 A TW 84107992A TW 84107992 A TW84107992 A TW 84107992A TW 271499 B TW271499 B TW 271499B
Authority
TW
Taiwan
Prior art keywords
type
independently
forming
area
mos transistor
Prior art date
Application number
TW84107992A
Other languages
English (en)
Inventor
Shenq-Shyong Yang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW84107992A priority Critical patent/TW271499B/zh
Application granted granted Critical
Publication of TW271499B publication Critical patent/TW271499B/zh

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW84107992A 1995-08-01 1995-08-01 Fabricating process for high-voltage CMOS transistor TW271499B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84107992A TW271499B (en) 1995-08-01 1995-08-01 Fabricating process for high-voltage CMOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84107992A TW271499B (en) 1995-08-01 1995-08-01 Fabricating process for high-voltage CMOS transistor

Publications (1)

Publication Number Publication Date
TW271499B true TW271499B (en) 1996-03-01

Family

ID=51397051

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84107992A TW271499B (en) 1995-08-01 1995-08-01 Fabricating process for high-voltage CMOS transistor

Country Status (1)

Country Link
TW (1) TW271499B (zh)

Similar Documents

Publication Publication Date Title
US5548143A (en) Metal oxide semiconductor transistor and a method for manufacturing the same
GB1529297A (en) Self-aligned cmos process for bulk silicon device
KR910019246A (ko) 자동배열된 실리사이드 cmos 처리에서의 esd 보호용 n- 채널 클램프
EP0402784A3 (en) Method of manufacturing a CMOS semiconductor device
EP0657929A3 (en) Mosfets with improved short channel effects and method of making the same
US4713329A (en) Well mask for CMOS process
EP0727098B1 (en) High-voltage ldd-mosfet with increased breakdown voltage and method of fabrication
TW271499B (en) Fabricating process for high-voltage CMOS transistor
KR940010321A (ko) 상보형 금속산화물 반도체(cmos)트랜지스터용 nmos ldd pmos 헤일로(halo) 집적회로의 제조방법
TW266321B (en) Process for high-voltage CMOS transistor
TW245814B (en) Process for CMOS transistor with high voltage metal gate
TW276359B (en) MOS transistor structure and fabricating method therefor
TW263602B (en) Process for high voltage field effect transistor
TW288176B (en) Process of fabrication CMOS transistor with metal gate
TW241383B (en) Fabrication method for CMOS transistor with metal gate
TW245816B (en) Process for power MOS transistor
TW257886B (en) Process of MOS transistor
KR970010018B1 (ko) 반도체 장치 및 그의 제조 방법
KR970004483B1 (en) Method for manufacture of mos transistor
TW275135B (en) Fabrication method for CMOS with metal gate
TW240330B (en) Fabrication method for IC
TW278221B (en) Fabrication method of self-aligned CMOS transistor
TW257884B (en) Process of CMOS transistor
TW234201B (en) Simplified process for CMOS with lightly doped drain
TW246740B (en) Process of sub-micron device with local packet-type doping