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Priority to TW84105458ApriorityCriticalpatent/TW263615B/en
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Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Abstract
A process for MOSFET resistor comprises the steps of: forming one gate isolating layer and one gate conductive layer on one semiconductor substrate in sequence; with the gate conductive layer as mask implanting impurity into the semiconductor substrate to form one pair of source/drain region; forming one sidewall spacer on either the gate isolating layer sidewall or the gate conductive layer sidewall; depositing one Ti layer with thickness larger than the gate isolating layer's to cover the surfaces of each the above layers; processing the first rapid thermal annealing, making the Ti layer with the contacted gate conductive layer and the pair of source/drain region surface react to form SiTi; removing the non-reacted Ti layer on the sidewall spacer; and processing the second thermal annealing, making the SiTi reach stable crystal phase, therefore, the SiTi makes the gate conductive layer connect with one region in the pair of source/drain region, completing the resistor of MOSFET.
TW84105458A1995-05-301995-05-30Process for MOSFET resistor
TW263615B
(en)
Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby