TW262569B - - Google Patents

Info

Publication number
TW262569B
TW262569B TW083110238A TW83110238A TW262569B TW 262569 B TW262569 B TW 262569B TW 083110238 A TW083110238 A TW 083110238A TW 83110238 A TW83110238 A TW 83110238A TW 262569 B TW262569 B TW 262569B
Authority
TW
Taiwan
Application number
TW083110238A
Other languages
Chinese (zh)
Original Assignee
Nidden Aneruba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nidden Aneruba Kk filed Critical Nidden Aneruba Kk
Application granted granted Critical
Publication of TW262569B publication Critical patent/TW262569B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H10P50/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW083110238A 1993-11-30 1994-11-05 TW262569B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29992993A JP3343629B2 (ja) 1993-11-30 1993-11-30 プラズマ処理装置

Publications (1)

Publication Number Publication Date
TW262569B true TW262569B (enExample) 1995-11-11

Family

ID=17878640

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110238A TW262569B (enExample) 1993-11-30 1994-11-05

Country Status (4)

Country Link
US (1) US5502355A (enExample)
JP (1) JP3343629B2 (enExample)
KR (1) KR0148228B1 (enExample)
TW (1) TW262569B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI490965B (zh) * 2007-07-27 2015-07-01 瑪森科技公司 改良的多工件處理室及其裝置與方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
JP3019002B2 (ja) * 1996-09-20 2000-03-13 日本電気株式会社 ドライエッチング装置及びドライエッチング方法
US6022749A (en) * 1998-02-25 2000-02-08 Advanced Micro Devices, Inc. Using a superlattice to determine the temperature of a semiconductor fabrication process
JP4672169B2 (ja) * 2001-04-05 2011-04-20 キヤノンアネルバ株式会社 プラズマ処理装置
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
JP4853049B2 (ja) * 2006-03-02 2012-01-11 大日本印刷株式会社 プラズマ処理方法
JP5264231B2 (ja) 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US9263350B2 (en) * 2014-06-03 2016-02-16 Lam Research Corporation Multi-station plasma reactor with RF balancing
CN108028164B (zh) * 2015-09-11 2020-12-29 应用材料公司 具有开槽接地板的等离子体模块
US20200051793A1 (en) 2018-08-13 2020-02-13 Skc Solmics Co., Ltd. Ring-shaped element for etcher and method for etching substrate using the same
US20240136159A1 (en) * 2022-10-25 2024-04-25 Applied Materials, Inc. Metallic Shield For Stable Tape-Frame Substrate Processing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269620A (ja) * 1985-09-24 1987-03-30 Anelva Corp プラズマ処理装置
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5252892A (en) * 1989-02-16 1993-10-12 Tokyo Electron Limited Plasma processing apparatus
KR0165898B1 (ko) * 1990-07-02 1999-02-01 미다 가쓰시게 진공처리방법 및 장치
US5173641A (en) * 1990-09-14 1992-12-22 Tokyo Electron Limited Plasma generating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI490965B (zh) * 2007-07-27 2015-07-01 瑪森科技公司 改良的多工件處理室及其裝置與方法

Also Published As

Publication number Publication date
KR950015623A (ko) 1995-06-17
JPH07153743A (ja) 1995-06-16
US5502355A (en) 1996-03-26
JP3343629B2 (ja) 2002-11-11
KR0148228B1 (ko) 1998-11-02

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent