TW262569B - - Google Patents

Info

Publication number
TW262569B
TW262569B TW083110238A TW83110238A TW262569B TW 262569 B TW262569 B TW 262569B TW 083110238 A TW083110238 A TW 083110238A TW 83110238 A TW83110238 A TW 83110238A TW 262569 B TW262569 B TW 262569B
Authority
TW
Taiwan
Application number
TW083110238A
Original Assignee
Nidden Aneruba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nidden Aneruba Kk filed Critical Nidden Aneruba Kk
Application granted granted Critical
Publication of TW262569B publication Critical patent/TW262569B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32697Electrostatic control

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW083110238A 1993-11-30 1994-11-05 TW262569B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29992993A JP3343629B2 (ja) 1993-11-30 1993-11-30 プラズマ処理装置

Publications (1)

Publication Number Publication Date
TW262569B true TW262569B (zh) 1995-11-11

Family

ID=17878640

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110238A TW262569B (zh) 1993-11-30 1994-11-05

Country Status (4)

Country Link
US (1) US5502355A (zh)
JP (1) JP3343629B2 (zh)
KR (1) KR0148228B1 (zh)
TW (1) TW262569B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI490965B (zh) * 2007-07-27 2015-07-01 Mattson Tech Inc 改良的多工件處理室及其裝置與方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
JP3019002B2 (ja) * 1996-09-20 2000-03-13 日本電気株式会社 ドライエッチング装置及びドライエッチング方法
US6022749A (en) * 1998-02-25 2000-02-08 Advanced Micro Devices, Inc. Using a superlattice to determine the temperature of a semiconductor fabrication process
JP4672169B2 (ja) * 2001-04-05 2011-04-20 キヤノンアネルバ株式会社 プラズマ処理装置
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
JP4853049B2 (ja) * 2006-03-02 2012-01-11 大日本印刷株式会社 プラズマ処理方法
JP5264231B2 (ja) * 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US20170076917A1 (en) * 2015-09-11 2017-03-16 Applied Materials, Inc. Plasma Module With Slotted Ground Plate
JP6965313B2 (ja) 2018-08-13 2021-11-10 エスケーシー ソルミックス カンパニー,リミテッド エッチング装置用リング状部品及びこれを用いた基板のエッチング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269620A (ja) * 1985-09-24 1987-03-30 Anelva Corp プラズマ処理装置
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5252892A (en) * 1989-02-16 1993-10-12 Tokyo Electron Limited Plasma processing apparatus
KR0165898B1 (ko) * 1990-07-02 1999-02-01 미다 가쓰시게 진공처리방법 및 장치
US5173641A (en) * 1990-09-14 1992-12-22 Tokyo Electron Limited Plasma generating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI490965B (zh) * 2007-07-27 2015-07-01 Mattson Tech Inc 改良的多工件處理室及其裝置與方法

Also Published As

Publication number Publication date
KR950015623A (ko) 1995-06-17
JPH07153743A (ja) 1995-06-16
JP3343629B2 (ja) 2002-11-11
KR0148228B1 (ko) 1998-11-02
US5502355A (en) 1996-03-26

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Legal Events

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MK4A Expiration of patent term of an invention patent