TW253076B - Process of stacked capacitor electrode of dynamic random access memory - Google Patents

Process of stacked capacitor electrode of dynamic random access memory

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Publication number
TW253076B
TW253076B TW83101932A TW83101932A TW253076B TW 253076 B TW253076 B TW 253076B TW 83101932 A TW83101932 A TW 83101932A TW 83101932 A TW83101932 A TW 83101932A TW 253076 B TW253076 B TW 253076B
Authority
TW
Taiwan
Prior art keywords
stacked capacitor
random access
access memory
dynamic random
capacitor electrode
Prior art date
Application number
TW83101932A
Other languages
Chinese (zh)
Inventor
Jau-Hwang Her
Tzyh-Cherng Liaw
Yuh-Hwa Lii
Haw Ian
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW83101932A priority Critical patent/TW253076B/en
Application granted granted Critical
Publication of TW253076B publication Critical patent/TW253076B/en

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  • Semiconductor Integrated Circuits (AREA)

Abstract

A process of stacked capacitor electrode of dynamic random access memory includes: - selectively forming thick field oxide area on semiconductor substrate, and leaving active area for implementing field effect device; - forming device structure on active area; - continuously two layers of polysilicon on the active and field oxide area as bottom plate of capacitor in which the lower layer is undoped polysilicon and the upper one is in-situ doped polysilicon; - annealing the bottom plate; - completing stacked capacitor structure on the bottom plate.
TW83101932A 1994-03-03 1994-03-03 Process of stacked capacitor electrode of dynamic random access memory TW253076B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83101932A TW253076B (en) 1994-03-03 1994-03-03 Process of stacked capacitor electrode of dynamic random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83101932A TW253076B (en) 1994-03-03 1994-03-03 Process of stacked capacitor electrode of dynamic random access memory

Publications (1)

Publication Number Publication Date
TW253076B true TW253076B (en) 1995-08-01

Family

ID=51401484

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83101932A TW253076B (en) 1994-03-03 1994-03-03 Process of stacked capacitor electrode of dynamic random access memory

Country Status (1)

Country Link
TW (1) TW253076B (en)

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MM4A Annulment or lapse of patent due to non-payment of fees