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A process of thin film transistor includes: - depositing a polysilicon layer without high density doped dopant on Si substrate, then after thermal oxidization growing a gate oxide, depositing one first polysilicon with high density doped dopant, and after mask photolithography, etching forming gate; - depositing a insulator and the second polysilicon with high density doped dopant, then by aisotropic etching-back technique etching the second polysilicon to remain polysilicon spacer on the two sides of gate; - proceeding a mask to make the polysilicon spacer near drain end covered with photoresist, then etching to remove polysilicon spacer close to the source end; - proceeding ion implantation with high density dopant to form the source and drain area of thin film transistor.
TW83102202A1994-03-151994-03-15Process of thin film transistor
TW250578B
(en)