TW249285B - - Google Patents

Info

Publication number
TW249285B
TW249285B TW082101120A TW82101120A TW249285B TW 249285 B TW249285 B TW 249285B TW 082101120 A TW082101120 A TW 082101120A TW 82101120 A TW82101120 A TW 82101120A TW 249285 B TW249285 B TW 249285B
Authority
TW
Taiwan
Application number
TW082101120A
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW249285B publication Critical patent/TW249285B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
TW082101120A 1991-08-30 1993-02-18 TW249285B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/753,252 US5264384A (en) 1991-08-30 1991-08-30 Method of making a non-volatile memory cell

Publications (1)

Publication Number Publication Date
TW249285B true TW249285B (zh) 1995-06-11

Family

ID=25029838

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082101120A TW249285B (zh) 1991-08-30 1993-02-18

Country Status (6)

Country Link
US (3) US5264384A (zh)
EP (1) EP0530644B1 (zh)
JP (1) JP3270530B2 (zh)
KR (1) KR100293075B1 (zh)
DE (1) DE69222913T2 (zh)
TW (1) TW249285B (zh)

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US5264384A (en) * 1991-08-30 1993-11-23 Texas Instruments Incorporated Method of making a non-volatile memory cell
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US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US7071060B1 (en) * 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
EP0552531B1 (en) * 1992-01-22 2000-08-16 Macronix International Co., Ltd. Non-volatile memory cell and array architecture
US5349225A (en) * 1993-04-12 1994-09-20 Texas Instruments Incorporated Field effect transistor with a lightly doped drain
EP0655778A3 (en) * 1993-11-25 1996-01-03 Matsushita Electronics Corp Method of manufacturing semiconductor memory devices.
EP0676816B1 (en) * 1994-03-28 2001-10-04 STMicroelectronics S.r.l. Flash - EEPROM memory array and biasing method thereof
US5650340A (en) * 1994-08-18 1997-07-22 Sun Microsystems, Inc. Method of making asymmetric low power MOS devices
KR100192430B1 (ko) * 1995-08-21 1999-06-15 구본준 비휘발성 메모리 및 이 비휘발성 메모리를 프로그램하는 방법
US5882970A (en) * 1995-11-03 1999-03-16 United Microelectronics Corporation Method for fabricating flash memory cell having a decreased overlapped region between its source and gate
IT1289540B1 (it) * 1996-07-10 1998-10-15 Sgs Thomson Microelectronics Metodo per trasformare automaticamente la fabbricazione di una cella di memoria eprom nella fabbricazione di una cella di memoria
KR100238199B1 (ko) * 1996-07-30 2000-01-15 윤종용 플레쉬 이이피롬(eeprom) 장치 및 그 제조방법
US5900666A (en) * 1996-12-03 1999-05-04 Advanced Micro Devices, Inc. Ultra-short transistor fabrication scheme for enhanced reliability
US5898202A (en) * 1996-12-03 1999-04-27 Advanced Micro Devices, Inc. Selective spacer formation for optimized silicon area reduction
US6020232A (en) * 1996-12-03 2000-02-01 Advanced Micro Devices, Inc. Process of fabricating transistors having source and drain regions laterally displaced from the transistors gate
US5926714A (en) * 1996-12-03 1999-07-20 Advanced Micro Devices, Inc. Detached drain MOSFET
US6060360A (en) * 1997-04-14 2000-05-09 Taiwan Semiconductor Manufacturing Company Method of manufacture of P-channel EEprom and flash EEprom devices
US6124610A (en) 1998-06-26 2000-09-26 Advanced Micro Devices, Inc. Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implant
US6245623B1 (en) * 1998-11-06 2001-06-12 Advanced Micro Devices, Inc. CMOS semiconductor device containing N-channel transistor having shallow LDD junctions
KR100278661B1 (ko) * 1998-11-13 2001-02-01 윤종용 비휘발성 메모리소자 및 그 제조방법
JP2002184877A (ja) * 2000-12-15 2002-06-28 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその製造方法
US7135734B2 (en) * 2001-08-30 2006-11-14 Micron Technology, Inc. Graded composition metal oxide tunnel barrier interpoly insulators
US7132711B2 (en) * 2001-08-30 2006-11-07 Micron Technology, Inc. Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
US7068544B2 (en) 2001-08-30 2006-06-27 Micron Technology, Inc. Flash memory with low tunnel barrier interpoly insulators
US7012297B2 (en) * 2001-08-30 2006-03-14 Micron Technology, Inc. Scalable flash/NV structures and devices with extended endurance
US7075829B2 (en) * 2001-08-30 2006-07-11 Micron Technology, Inc. Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
US6784480B2 (en) * 2002-02-12 2004-08-31 Micron Technology, Inc. Asymmetric band-gap engineered nonvolatile memory device
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6773990B1 (en) * 2003-05-03 2004-08-10 Advanced Micro Devices, Inc. Method for reducing short channel effects in memory cells and related structure
US7232729B1 (en) * 2003-05-06 2007-06-19 Spansion Llc Method for manufacturing a double bitline implant
JP4419699B2 (ja) * 2004-06-16 2010-02-24 ソニー株式会社 不揮発性半導体メモリ装置およびその動作方法
CN100592521C (zh) * 2005-09-15 2010-02-24 旺宏电子股份有限公司 快闪存储元件与其制造方法
US20070099386A1 (en) * 2005-10-31 2007-05-03 International Business Machines Corporation Integration scheme for high gain fet in standard cmos process
JP4314252B2 (ja) 2006-07-03 2009-08-12 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7800156B2 (en) * 2008-02-25 2010-09-21 Tower Semiconductor Ltd. Asymmetric single poly NMOS non-volatile memory cell
US8344440B2 (en) * 2008-02-25 2013-01-01 Tower Semiconductor Ltd. Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times
US7859043B2 (en) * 2008-02-25 2010-12-28 Tower Semiconductor Ltd. Three-terminal single poly NMOS non-volatile memory cell
US9305931B2 (en) 2011-05-10 2016-04-05 Jonker, Llc Zero cost NVM cell using high voltage devices in analog process
US9230814B2 (en) 2011-10-28 2016-01-05 Invensas Corporation Non-volatile memory devices having vertical drain to gate capacitive coupling
US8873302B2 (en) * 2011-10-28 2014-10-28 Invensas Corporation Common doped region with separate gate control for a logic compatible non-volatile memory cell
US11605438B2 (en) 2020-11-16 2023-03-14 Ememory Technology Inc. Memory device for improving weak-program or stuck bit

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JPS59102498A (ja) * 1982-12-02 1984-06-13 Hitachi Zosen Corp 湿潤スラツジの焼成装置
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JPH0760864B2 (ja) * 1984-07-13 1995-06-28 株式会社日立製作所 半導体集積回路装置
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JPH0783066B2 (ja) * 1989-08-11 1995-09-06 株式会社東芝 半導体装置の製造方法
JPH0770728B2 (ja) * 1989-11-15 1995-07-31 三洋電機株式会社 半導体装置の製造方法
US5202576A (en) * 1990-08-29 1993-04-13 Texas Instruments Incorporated Asymmetrical non-volatile memory cell, arrays and methods for fabricating same
EP0473129B1 (en) * 1990-08-29 1998-05-13 Texas Instruments Incorporated Asymmetrical non-volatile memory cell, arrays and methods for fabricating same
US5424567A (en) * 1991-05-15 1995-06-13 North American Philips Corporation Protected programmable transistor with reduced parasitic capacitances and method of fabrication
US5264384A (en) * 1991-08-30 1993-11-23 Texas Instruments Incorporated Method of making a non-volatile memory cell

Also Published As

Publication number Publication date
DE69222913T2 (de) 1998-05-14
EP0530644A3 (en) 1993-08-04
DE69222913D1 (de) 1997-12-04
EP0530644A2 (en) 1993-03-10
JPH06204488A (ja) 1994-07-22
KR100293075B1 (ko) 2001-09-17
US5646430A (en) 1997-07-08
US5482880A (en) 1996-01-09
EP0530644B1 (en) 1997-10-29
JP3270530B2 (ja) 2002-04-02
US5264384A (en) 1993-11-23

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees