TW247370B - - Google Patents
Info
- Publication number
- TW247370B TW247370B TW082109364A TW82109364A TW247370B TW 247370 B TW247370 B TW 247370B TW 082109364 A TW082109364 A TW 082109364A TW 82109364 A TW82109364 A TW 82109364A TW 247370 B TW247370 B TW 247370B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/975,235 US5268332A (en) | 1992-11-12 | 1992-11-12 | Method of integrated circuit fabrication having planarized dielectrics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW247370B true TW247370B (en, 2012) | 1995-05-11 |
Family
ID=25522812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082109364A TW247370B (en, 2012) | 1992-11-12 | 1993-11-06 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5268332A (en, 2012) |
| EP (1) | EP0597634A3 (en, 2012) |
| JP (1) | JPH06224188A (en, 2012) |
| KR (1) | KR100276146B1 (en, 2012) |
| TW (1) | TW247370B (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2926864B2 (ja) * | 1990-04-12 | 1999-07-28 | ソニー株式会社 | 銅系金属膜のエッチング方法 |
| US6297110B1 (en) * | 1994-07-29 | 2001-10-02 | Stmicroelectronics, Inc. | Method of forming a contact in an integrated circuit |
| JPH11506744A (ja) | 1995-06-07 | 1999-06-15 | ノウブン ファーマシューティカルズ インク． | 室温で液体である低分子量薬を含む経皮組成物 |
| CN102157437B (zh) * | 2010-02-11 | 2013-12-25 | 中国科学院微电子研究所 | 半导体结构的形成方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4708770A (en) * | 1986-06-19 | 1987-11-24 | Lsi Logic Corporation | Planarized process for forming vias in silicon wafers |
| DE3686721D1 (de) * | 1986-10-08 | 1992-10-15 | Ibm | Verfahren zur herstellung einer kontaktoeffnung mit gewuenschter schraege in einer zusammengesetzten schicht, die mit photoresist maskiert ist. |
| US5022958A (en) * | 1990-06-27 | 1991-06-11 | At&T Bell Laboratories | Method of etching for integrated circuits with planarized dielectric |
-
1992
- 1992-11-12 US US07/975,235 patent/US5268332A/en not_active Expired - Lifetime
-
1993
- 1993-11-04 EP EP9393308839A patent/EP0597634A3/en not_active Withdrawn
- 1993-11-06 TW TW082109364A patent/TW247370B/zh not_active IP Right Cessation
- 1993-11-11 KR KR1019930023860A patent/KR100276146B1/ko not_active Expired - Lifetime
- 1993-11-12 JP JP5282863A patent/JPH06224188A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0597634A3 (en) | 1994-08-24 |
| KR100276146B1 (ko) | 2001-01-15 |
| JPH06224188A (ja) | 1994-08-12 |
| KR940012505A (ko) | 1994-06-23 |
| US5268332A (en) | 1993-12-07 |
| EP0597634A2 (en) | 1994-05-18 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |