TW247370B - - Google Patents

Info

Publication number
TW247370B
TW247370B TW082109364A TW82109364A TW247370B TW 247370 B TW247370 B TW 247370B TW 082109364 A TW082109364 A TW 082109364A TW 82109364 A TW82109364 A TW 82109364A TW 247370 B TW247370 B TW 247370B
Authority
TW
Taiwan
Application number
TW082109364A
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Application granted granted Critical
Publication of TW247370B publication Critical patent/TW247370B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
TW082109364A 1992-11-12 1993-11-06 TW247370B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/975,235 US5268332A (en) 1992-11-12 1992-11-12 Method of integrated circuit fabrication having planarized dielectrics

Publications (1)

Publication Number Publication Date
TW247370B true TW247370B (zh) 1995-05-11

Family

ID=25522812

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082109364A TW247370B (zh) 1992-11-12 1993-11-06

Country Status (5)

Country Link
US (1) US5268332A (zh)
EP (1) EP0597634A3 (zh)
JP (1) JPH06224188A (zh)
KR (1) KR100276146B1 (zh)
TW (1) TW247370B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2926864B2 (ja) * 1990-04-12 1999-07-28 ソニー株式会社 銅系金属膜のエッチング方法
US6297110B1 (en) * 1994-07-29 2001-10-02 Stmicroelectronics, Inc. Method of forming a contact in an integrated circuit
NZ309980A (en) 1995-06-07 2001-06-29 Noven Pharma Transdermal composition containing a blend of one or more polymers, one or more drugs that has a low molecular weight and is liquid at room temperature
CN102157437B (zh) * 2010-02-11 2013-12-25 中国科学院微电子研究所 半导体结构的形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4708770A (en) * 1986-06-19 1987-11-24 Lsi Logic Corporation Planarized process for forming vias in silicon wafers
EP0263220B1 (en) * 1986-10-08 1992-09-09 International Business Machines Corporation Method of forming a via-having a desired slope in a photoresist masked composite insulating layer
US5022958A (en) * 1990-06-27 1991-06-11 At&T Bell Laboratories Method of etching for integrated circuits with planarized dielectric

Also Published As

Publication number Publication date
KR940012505A (ko) 1994-06-23
KR100276146B1 (ko) 2001-01-15
EP0597634A3 (en) 1994-08-24
US5268332A (en) 1993-12-07
EP0597634A2 (en) 1994-05-18
JPH06224188A (ja) 1994-08-12

Similar Documents

Publication Publication Date Title
DE9200071U1 (zh)
DE9201386U1 (zh)
DE9200064U1 (zh)
DE9214297U1 (zh)
DE9209887U1 (zh)
DE9200219U1 (zh)
DE9200097U1 (zh)
DE9200054U1 (zh)
DE9200099U1 (zh)
DE9200237U1 (zh)
DE9200209U1 (zh)
DE9200091U1 (zh)
DE9200123U1 (zh)
DE9200182U1 (zh)
DE9206615U1 (zh)
DE9200271U1 (zh)
DE9200148U1 (zh)
DE9200150U1 (zh)
DE9200151U1 (zh)
DE9200160U1 (zh)
DE9211260U1 (zh)
DE9214588U1 (zh)
DE9200102U1 (zh)
DE9200048U1 (zh)
DE9300341U1 (zh)

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent