TW246748B - - Google Patents

Info

Publication number
TW246748B
TW246748B TW081102484A TW81102484A TW246748B TW 246748 B TW246748 B TW 246748B TW 081102484 A TW081102484 A TW 081102484A TW 81102484 A TW81102484 A TW 81102484A TW 246748 B TW246748 B TW 246748B
Authority
TW
Taiwan
Application number
TW081102484A
Other languages
Chinese (zh)
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Application granted granted Critical
Publication of TW246748B publication Critical patent/TW246748B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
TW081102484A 1991-10-16 1992-04-01 TW246748B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/777,888 US5148504A (en) 1991-10-16 1991-10-16 Optical integrated circuit designed to operate by use of photons

Publications (1)

Publication Number Publication Date
TW246748B true TW246748B (OSRAM) 1995-05-01

Family

ID=25111610

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081102484A TW246748B (OSRAM) 1991-10-16 1992-04-01

Country Status (7)

Country Link
US (1) US5148504A (OSRAM)
EP (1) EP0541247A1 (OSRAM)
JP (1) JPH05218386A (OSRAM)
CA (1) CA2072247C (OSRAM)
NO (1) NO923989L (OSRAM)
PT (1) PT100954A (OSRAM)
TW (1) TW246748B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI421552B (zh) * 2007-07-12 2014-01-01 Ibm 波長選擇濾光器中最小化傳播損耗之方法及裝置

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USRE42773E1 (en) 1992-06-17 2011-10-04 Round Rock Research, Llc Method of manufacturing an enclosed transceiver
US6045652A (en) * 1992-06-17 2000-04-04 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US5776278A (en) 1992-06-17 1998-07-07 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US5779839A (en) * 1992-06-17 1998-07-14 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
DE4345610B4 (de) * 1992-06-17 2013-01-03 Micron Technology Inc. Verfahren zur Herstellung einer Hochfrequenz-Identifikationseinrichtung (HFID)
US7158031B2 (en) * 1992-08-12 2007-01-02 Micron Technology, Inc. Thin, flexible, RFID label and system for use
DE4312881C1 (de) * 1993-04-20 1994-03-17 Fraunhofer Ges Forschung Substrat-Halbzeug für optisch-elektrische Hybridschaltungen und Verfahren zu seiner Herstellung
US5751466A (en) * 1996-01-11 1998-05-12 University Of Alabama At Huntsville Photonic bandgap apparatus and method for delaying photonic signals
US5988510A (en) * 1997-02-13 1999-11-23 Micron Communications, Inc. Tamper resistant smart card and method of protecting data in a smart card
US6329213B1 (en) 1997-05-01 2001-12-11 Micron Technology, Inc. Methods for forming integrated circuits within substrates
US6339385B1 (en) 1997-08-20 2002-01-15 Micron Technology, Inc. Electronic communication devices, methods of forming electrical communication devices, and communication methods
US6262830B1 (en) 1997-09-16 2001-07-17 Michael Scalora Transparent metallo-dielectric photonic band gap structure
US5907427A (en) 1997-10-24 1999-05-25 Time Domain Corporation Photonic band gap device and method using a periodicity defect region to increase photonic signal delay
US6028693A (en) * 1998-01-14 2000-02-22 University Of Alabama In Huntsville Microresonator and associated method for producing and controlling photonic signals with a photonic bandgap delay apparatus
US6744552B2 (en) * 1998-04-02 2004-06-01 Michael Scalora Photonic signal frequency up and down-conversion using a photonic band gap structure
US6304366B1 (en) 1998-04-02 2001-10-16 Michael Scalora Photonic signal frequency conversion using a photonic band gap structure
US6396617B1 (en) 1999-05-17 2002-05-28 Michael Scalora Photonic band gap device and method using a periodicity defect region doped with a gain medium to increase photonic signal delay
US6273339B1 (en) 1999-08-30 2001-08-14 Micron Technology, Inc. Tamper resistant smart card and method of protecting data in a smart card
WO2001023948A1 (en) 1999-09-30 2001-04-05 Aguanno Giuseppe D Efficient non-linear phase shifting using a photonic band gap structure
US6339493B1 (en) 1999-12-23 2002-01-15 Michael Scalora Apparatus and method for controlling optics propagation based on a transparent metal stack
US6414780B1 (en) 1999-12-23 2002-07-02 D'aguanno Giuseppe Photonic signal reflectivity and transmissivity control using a photonic band gap structure
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) * 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
JP2004522982A (ja) * 2000-02-17 2004-07-29 ナノヴェイション テクノロジーズ インコーポレイテッド 封じ込め作用の強い偏波無依存性シングルモードリッジ光導波路
WO2001093336A1 (en) 2000-05-31 2001-12-06 Motorola, Inc. Semiconductor device and method for manufacturing the same
AU2001277001A1 (en) 2000-07-24 2002-02-05 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
JP4638005B2 (ja) * 2000-08-28 2011-02-23 ルネサスエレクトロニクス株式会社 半導体装置
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
JP2003015175A (ja) 2001-04-27 2003-01-15 Mitsubishi Electric Corp 固体光源装置
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) * 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6639249B2 (en) * 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030026310A1 (en) * 2001-08-06 2003-02-06 Motorola, Inc. Structure and method for fabrication for a lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
WO2003017372A1 (de) * 2001-08-14 2003-02-27 Infineon Technologies Ag Photodiodenanordnung mit zwei photodioden
US6673667B2 (en) * 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) * 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6806202B2 (en) 2002-12-03 2004-10-19 Motorola, Inc. Method of removing silicon oxide from a surface of a substrate
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US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7286770B2 (en) * 2003-07-18 2007-10-23 International Business Machines Corporation Fiber optic transmission lines on an SOC
US7570849B2 (en) * 2005-06-21 2009-08-04 Hewlett-Packard Development Company, L.P. Integrated circuit device having optically coupled layers
US7352602B2 (en) 2005-12-30 2008-04-01 Micron Technology, Inc. Configurable inputs and outputs for memory stacking system and method
EP2698598B1 (en) 2006-10-23 2015-12-02 J.A. Woollam Co., Inc. System and method for setting and compensating errors in AOI and POI of a beam of EM radiation
US20090317033A1 (en) * 2008-06-20 2009-12-24 Industrial Technology Research Institute Integrated circuit and photonic board thereof
KR20100067487A (ko) * 2008-12-11 2010-06-21 삼성전자주식회사 테스트 인터페이스 장치, 테스트 시스템 및 광 인터페이스 메모리 장치

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FR2613826B1 (fr) * 1987-04-07 1990-10-26 Commissariat Energie Atomique Capteur de deplacement en optique integree
US4762382A (en) * 1987-06-29 1988-08-09 Honeywell Inc. Optical interconnect circuit for GaAs optoelectronics and Si VLSI/VHSIC
DE3815293A1 (de) * 1988-05-05 1989-11-16 Licentia Gmbh Dreidimensional angeordnete wellenleiter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI421552B (zh) * 2007-07-12 2014-01-01 Ibm 波長選擇濾光器中最小化傳播損耗之方法及裝置

Also Published As

Publication number Publication date
NO923989L (no) 1993-04-19
US5148504A (en) 1992-09-15
CA2072247C (en) 1997-03-25
NO923989D0 (no) 1992-10-14
EP0541247A1 (en) 1993-05-12
CA2072247A1 (en) 1993-04-17
PT100954A (pt) 1994-05-31
JPH05218386A (ja) 1993-08-27

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