TW245877B - - Google Patents
Info
- Publication number
- TW245877B TW245877B TW082108295A TW82108295A TW245877B TW 245877 B TW245877 B TW 245877B TW 082108295 A TW082108295 A TW 082108295A TW 82108295 A TW82108295 A TW 82108295A TW 245877 B TW245877 B TW 245877B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- ing And Chemical Polishing (AREA)
- Plasma Technology (AREA)
- Coating By Spraying Or Casting (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4272046A JP2693899B2 (ja) | 1992-10-09 | 1992-10-09 | Ｅｃｒプラズマ加工方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW245877B true TW245877B (US06605200-20030812-C00035.png) | 1995-04-21 |
Family
ID=17508359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082108295A TW245877B (US06605200-20030812-C00035.png) | 1992-10-09 | 1993-10-07 |
Country Status (5)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3365067B2 (ja) * | 1994-02-10 | 2003-01-08 | ソニー株式会社 | プラズマ装置およびこれを用いたプラズマ処理方法 |
| JP3429776B2 (ja) * | 1995-09-18 | 2003-07-22 | 株式会社 日立製作所 | ドライエッチング方法 |
| JP3599564B2 (ja) | 1998-06-25 | 2004-12-08 | 東京エレクトロン株式会社 | イオン流形成方法及び装置 |
| US6054390A (en) * | 1997-11-05 | 2000-04-25 | Chartered Semiconductor Manufacturing Ltd. | Grazing incident angle processing method for microelectronics layer fabrication |
| US6566272B2 (en) | 1999-07-23 | 2003-05-20 | Applied Materials Inc. | Method for providing pulsed plasma during a portion of a semiconductor wafer process |
| KR100782579B1 (ko) * | 2006-09-26 | 2007-12-06 | 가부시키가이샤 나노빔 | Ｅｃｒ 이온소스 |
| US7772571B2 (en) | 2007-10-08 | 2010-08-10 | Advanced Ion Beam Technology, Inc. | Implant beam utilization in an ion implanter |
| US9895552B2 (en) * | 2015-05-26 | 2018-02-20 | Antaya Science & Technology | Isochronous cyclotron with superconducting flutter coils and non-magnetic reinforcement |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2580427B1 (fr) * | 1985-04-11 | 1987-05-15 | Commissariat Energie Atomique | Source d'ions negatifs a resonance cyclotronique des electrons |
| DE3729347A1 (de) * | 1986-09-05 | 1988-03-17 | Mitsubishi Electric Corp | Plasmaprozessor |
| US4778561A (en) * | 1987-10-30 | 1988-10-18 | Veeco Instruments, Inc. | Electron cyclotron resonance plasma source |
| JPH01243359A (ja) * | 1988-03-25 | 1989-09-28 | Matsushita Electric Ind Co Ltd | プラズマドーピング方法 |
| KR930004713B1 (ko) * | 1990-06-18 | 1993-06-03 | 삼성전자 주식회사 | 변조방식을 이용한 플라즈마 발생장치 및 방법 |
| US5208512A (en) * | 1990-10-16 | 1993-05-04 | International Business Machines Corporation | Scanned electron cyclotron resonance plasma source |
| JPH0521392A (ja) * | 1991-07-17 | 1993-01-29 | Fuji Electric Co Ltd | プラズマ加工装置 |
-
1992
- 1992-10-09 JP JP4272046A patent/JP2693899B2/ja not_active Expired - Lifetime
-
1993
- 1993-09-24 EP EP93307588A patent/EP0592129A1/en not_active Ceased
- 1993-09-24 US US08/126,790 patent/US5370779A/en not_active Expired - Fee Related
- 1993-10-07 TW TW082108295A patent/TW245877B/zh active
- 1993-10-09 KR KR1019930020938A patent/KR970010265B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2693899B2 (ja) | 1997-12-24 |
| KR970010265B1 (ko) | 1997-06-23 |
| KR940008817A (ko) | 1994-05-16 |
| JPH06124797A (ja) | 1994-05-06 |
| US5370779A (en) | 1994-12-06 |
| EP0592129A1 (en) | 1994-04-13 |
