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A fabricating method of flash EEPROM memory IC includes the following steps: 1. supplying one substrate with active area separated by field oxide layer; 2. forming source/drain in active area on substrate; 3. growing one tunneling oxide layer on substrate; 4. depositing one floating gate layer on tunneling oxide layer; 5. forming one dielectric layer on floating gate layer; 6. putting photoresist with mask, covering determined floating gate area and etching the exposed dielectric layer, floating gate layer and tunneling oxide layer, forming floating gate, then removing photoresist; 7. growing one thin thermal oxide layer; 8. depositing one chemical vapor deposition oxide layer; 9. depositing one control gate layer, and etching it to word line control gate; 10. supplying proper metal conductive wire for connecting components to form EEPROM memory IC.
TW83100078A1994-01-061994-01-06Fabricating method of flash EEPROM memory IC
TW244402B
(en)