TW338192B - The manufacturing method for flash EEPROM with NAND-structure - Google Patents
The manufacturing method for flash EEPROM with NAND-structureInfo
- Publication number
- TW338192B TW338192B TW084102400A TW84102400A TW338192B TW 338192 B TW338192 B TW 338192B TW 084102400 A TW084102400 A TW 084102400A TW 84102400 A TW84102400 A TW 84102400A TW 338192 B TW338192 B TW 338192B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive layer
- strips
- conductive
- nand
- mask
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
A manufacturing method for flash EEPROM with NAND-structure, it is used to produce flash EEPROM with NAND-structure on 1st semiconductor substrate, and includes following steps: Serially form tunnel oxide and 1st conductive layer on semiconductor substrate; Along 1st direction to form plurality screening strips on 1st conductive layer; Use screening strips as mask, to proceed etching, and to form plurality trenches, and form plurality conductive strips on 1st conductive layer; Use above screening strips as the mask of liquid selective deposition, and use liquid selective deposition method to form isolation insulating on trenches in between screening strips; Remove above screening strips; Serially form gate dielectric and 2nd conductive layer on isolation insulating and conductive strip; Along the 2nd direction, which is formed an angle with 1st direction, to etch 2nd conductive layer, gate dielectric layer and conductive strip, and enable the 2nd conductive layer to form plurality control gates, and the conductive strips to form floating gate; Use gate as mask, to implant 2nd dopant to semiconductor substrate, to form drain and source area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW084102400A TW338192B (en) | 1995-03-14 | 1995-03-14 | The manufacturing method for flash EEPROM with NAND-structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW084102400A TW338192B (en) | 1995-03-14 | 1995-03-14 | The manufacturing method for flash EEPROM with NAND-structure |
Publications (1)
Publication Number | Publication Date |
---|---|
TW338192B true TW338192B (en) | 1998-08-11 |
Family
ID=58263269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084102400A TW338192B (en) | 1995-03-14 | 1995-03-14 | The manufacturing method for flash EEPROM with NAND-structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW338192B (en) |
-
1995
- 1995-03-14 TW TW084102400A patent/TW338192B/en active
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