TW338192B - The manufacturing method for flash EEPROM with NAND-structure - Google Patents

The manufacturing method for flash EEPROM with NAND-structure

Info

Publication number
TW338192B
TW338192B TW084102400A TW84102400A TW338192B TW 338192 B TW338192 B TW 338192B TW 084102400 A TW084102400 A TW 084102400A TW 84102400 A TW84102400 A TW 84102400A TW 338192 B TW338192 B TW 338192B
Authority
TW
Taiwan
Prior art keywords
conductive layer
strips
conductive
nand
mask
Prior art date
Application number
TW084102400A
Other languages
Chinese (zh)
Inventor
Yeun-Ding Horng
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW084102400A priority Critical patent/TW338192B/en
Application granted granted Critical
Publication of TW338192B publication Critical patent/TW338192B/en

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

A manufacturing method for flash EEPROM with NAND-structure, it is used to produce flash EEPROM with NAND-structure on 1st semiconductor substrate, and includes following steps: Serially form tunnel oxide and 1st conductive layer on semiconductor substrate; Along 1st direction to form plurality screening strips on 1st conductive layer; Use screening strips as mask, to proceed etching, and to form plurality trenches, and form plurality conductive strips on 1st conductive layer; Use above screening strips as the mask of liquid selective deposition, and use liquid selective deposition method to form isolation insulating on trenches in between screening strips; Remove above screening strips; Serially form gate dielectric and 2nd conductive layer on isolation insulating and conductive strip; Along the 2nd direction, which is formed an angle with 1st direction, to etch 2nd conductive layer, gate dielectric layer and conductive strip, and enable the 2nd conductive layer to form plurality control gates, and the conductive strips to form floating gate; Use gate as mask, to implant 2nd dopant to semiconductor substrate, to form drain and source area.
TW084102400A 1995-03-14 1995-03-14 The manufacturing method for flash EEPROM with NAND-structure TW338192B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW084102400A TW338192B (en) 1995-03-14 1995-03-14 The manufacturing method for flash EEPROM with NAND-structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW084102400A TW338192B (en) 1995-03-14 1995-03-14 The manufacturing method for flash EEPROM with NAND-structure

Publications (1)

Publication Number Publication Date
TW338192B true TW338192B (en) 1998-08-11

Family

ID=58263269

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084102400A TW338192B (en) 1995-03-14 1995-03-14 The manufacturing method for flash EEPROM with NAND-structure

Country Status (1)

Country Link
TW (1) TW338192B (en)

Similar Documents

Publication Publication Date Title
EP2267774A3 (en) Method of forming a floating-gate memory array
TW363230B (en) Manufacturing method for the flash memory cell with split-gate
US5091327A (en) Fabrication of a high density stacked gate eprom split cell with bit line reach-through and interruption immunity
ATE228719T1 (en) IMPROVED INSULATION BETWEEN DIFFUSION LINES IN A STORAGE FIELD
TW357441B (en) Manufacturing method of split gate flash memory
KR970054236A (en) Flash memory device and manufacturing method thereof
TW338192B (en) The manufacturing method for flash EEPROM with NAND-structure
US6870214B2 (en) Method of fabricating flash EEPROM
TW374246B (en) Flash memory cell structure and method for manufacturing the same
TW242701B (en) Fabricating method for flash memory cell
KR0124648B1 (en) Flash eprom cell
KR100277900B1 (en) Nonvolatile Memory Cells and Manufacturing Method Thereof
KR0124645B1 (en) Flash memory device the method manufacturing
KR100294693B1 (en) Nonvolatile momory and method for manufacturing the same
KR0137428B1 (en) Flash eeprom and fabrication thereof
TW231373B (en) Fabricating method for EEPROM IC with MONOS/MNOS structrue
KR20010061418A (en) Method of manufacturing a flash memory device
TW364210B (en) Structure of nonvolatile memory having high coupling ratio and method thereof
TW357403B (en) Manufacturing method for improved endurance split gate flash memory
KR970013338A (en) Nonvolatile Memory Device and Manufacturing Method Thereof
TW240339B (en) Fabrication of EEPROM memory cell
TW367546B (en) Manufacturing method of flash memory with self-aligned drain junction
KR970018625A (en) Ipyrom semiconductor device and manufacturing method thereof
JPS56114374A (en) Semiconductor device
TW278246B (en) Fabrication method of flash memory