TW243534B - - Google Patents
Info
- Publication number
- TW243534B TW243534B TW083107893A TW83107893A TW243534B TW 243534 B TW243534 B TW 243534B TW 083107893 A TW083107893 A TW 083107893A TW 83107893 A TW83107893 A TW 83107893A TW 243534 B TW243534 B TW 243534B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H10P32/302—
-
- H10P32/00—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10977393A | 1993-08-20 | 1993-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW243534B true TW243534B (OSRAM) | 1995-03-21 |
Family
ID=22329485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083107893A TW243534B (OSRAM) | 1993-08-20 | 1994-08-29 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0639856A1 (OSRAM) |
| JP (1) | JPH07201771A (OSRAM) |
| KR (1) | KR950006974A (OSRAM) |
| TW (1) | TW243534B (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5792700A (en) * | 1996-05-31 | 1998-08-11 | Micron Technology, Inc. | Semiconductor processing method for providing large grain polysilicon films |
| JPH10247725A (ja) | 1997-03-05 | 1998-09-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| DE69739202D1 (de) * | 1997-11-14 | 2009-02-26 | St Microelectronics Srl | Verfahren zur Abscheidung von in-situ dotierten Polysilizium-Schichten |
| CN104103699A (zh) | 2013-04-03 | 2014-10-15 | Lg电子株式会社 | 太阳能电池 |
| KR102219804B1 (ko) | 2014-11-04 | 2021-02-24 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
| US9722104B2 (en) | 2014-11-28 | 2017-08-01 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| KR102272433B1 (ko) | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59138332A (ja) * | 1983-01-28 | 1984-08-08 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
| DE69125215T2 (de) * | 1990-07-16 | 1997-08-28 | Applied Materials Inc | Verfahren zur Abscheidung einer hochdotierten Polysiliciumschicht auf eine stufenförmige Halbleiterwaferfläche, welches verbesserte Stufenbeschichtung liefert |
-
1994
- 1994-08-18 EP EP94112897A patent/EP0639856A1/en not_active Withdrawn
- 1994-08-19 KR KR1019940020479A patent/KR950006974A/ko not_active Withdrawn
- 1994-08-22 JP JP6231998A patent/JPH07201771A/ja active Pending
- 1994-08-29 TW TW083107893A patent/TW243534B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR950006974A (ko) | 1995-03-21 |
| EP0639856A1 (en) | 1995-02-22 |
| JPH07201771A (ja) | 1995-08-04 |