TW241372B - - Google Patents

Info

Publication number
TW241372B
TW241372B TW083102899A TW83102899A TW241372B TW 241372 B TW241372 B TW 241372B TW 083102899 A TW083102899 A TW 083102899A TW 83102899 A TW83102899 A TW 83102899A TW 241372 B TW241372 B TW 241372B
Authority
TW
Taiwan
Application number
TW083102899A
Other languages
Chinese (zh)
Original Assignee
Hitachi Seisakusyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8044193A external-priority patent/JPH06291033A/ja
Priority claimed from JP17285793A external-priority patent/JPH0733600A/ja
Application filed by Hitachi Seisakusyo Kk filed Critical Hitachi Seisakusyo Kk
Application granted granted Critical
Publication of TW241372B publication Critical patent/TW241372B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
TW083102899A 1993-04-07 1994-04-01 TW241372B (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8044193A JPH06291033A (ja) 1993-04-07 1993-04-07 エピタキシー方法
JP17285793A JPH0733600A (ja) 1993-07-13 1993-07-13 微細構造形成方法および装置

Publications (1)

Publication Number Publication Date
TW241372B true TW241372B (enExample) 1995-02-21

Family

ID=26421453

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083102899A TW241372B (enExample) 1993-04-07 1994-04-01

Country Status (3)

Country Link
US (1) US5746826A (enExample)
TW (1) TW241372B (enExample)
WO (1) WO1994023445A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4137317B2 (ja) * 1999-10-07 2008-08-20 独立行政法人科学技術振興機構 微小立体構造物、その製造方法及びその製造装置
FR2802705B1 (fr) * 1999-12-16 2002-08-09 St Microelectronics Sa Procede de fabrication d'un reseau de lignes nanometriques en silicium monocristallin et dispositif obtenu
US6355561B1 (en) 2000-11-21 2002-03-12 Micron Technology, Inc. ALD method to improve surface coverage
SG98018A1 (en) * 2000-12-08 2003-08-20 Inst Materials Research & Eng A method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure
US6743474B1 (en) * 2001-10-25 2004-06-01 Lsi Logic Corporation Method for growing thin films
US7426067B1 (en) 2001-12-17 2008-09-16 Regents Of The University Of Colorado Atomic layer deposition on micro-mechanical devices
US6770536B2 (en) * 2002-10-03 2004-08-03 Agere Systems Inc. Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate
US7553686B2 (en) * 2002-12-17 2009-06-30 The Regents Of The University Of Colorado, A Body Corporate Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices
US8563966B2 (en) * 2011-12-30 2013-10-22 Khalifa University of Science, Technology & Research (KUSTAR) Nano metal particles based tunneling field effect transistor and nano-switch

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02162717A (ja) * 1988-12-15 1990-06-22 Fujitsu Ltd 量子細線の形成方法
US5013683A (en) * 1989-01-23 1991-05-07 The Regents Of The University Of California Method for growing tilted superlattices
JPH02206112A (ja) * 1989-02-06 1990-08-15 Nippon Telegr & Teleph Corp <Ntt> 電子波干渉素子の製造方法
JPH02283695A (ja) * 1989-04-26 1990-11-21 Mitsubishi Electric Corp 分子線結晶成長法
US5134091A (en) * 1989-09-29 1992-07-28 National Research Institute For Metals Quantum effective device and process for its production
JPH03233926A (ja) * 1990-02-08 1991-10-17 Fujitsu Ltd エピタキシャル成長用基板
JPH04105313A (ja) * 1990-08-24 1992-04-07 Nec Corp 量子箱の製造方法
JPH04154113A (ja) * 1990-10-18 1992-05-27 Agency Of Ind Science & Technol 結晶成長方法
JPH04154114A (ja) * 1990-10-18 1992-05-27 Agency Of Ind Science & Technol 結晶成長方法
WO1992012528A1 (fr) * 1991-01-11 1992-07-23 Hitachi Limited Appareil et procede d'usinage d'atomes de surface
JPH088396B2 (ja) * 1991-08-01 1996-01-29 東京工業大学長 多次元量子井戸素子およびその製造方法

Also Published As

Publication number Publication date
WO1994023445A1 (fr) 1994-10-13
US5746826A (en) 1998-05-05

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