TW241372B - - Google Patents
Info
- Publication number
- TW241372B TW241372B TW083102899A TW83102899A TW241372B TW 241372 B TW241372 B TW 241372B TW 083102899 A TW083102899 A TW 083102899A TW 83102899 A TW83102899 A TW 83102899A TW 241372 B TW241372 B TW 241372B
- Authority
- TW
- Taiwan
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8044193A JPH06291033A (ja) | 1993-04-07 | 1993-04-07 | エピタキシー方法 |
JP17285793A JPH0733600A (ja) | 1993-07-13 | 1993-07-13 | 微細構造形成方法および装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW241372B true TW241372B (zh) | 1995-02-21 |
Family
ID=26421453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083102899A TW241372B (zh) | 1993-04-07 | 1994-04-01 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5746826A (zh) |
TW (1) | TW241372B (zh) |
WO (1) | WO1994023445A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4137317B2 (ja) * | 1999-10-07 | 2008-08-20 | 独立行政法人科学技術振興機構 | 微小立体構造物、その製造方法及びその製造装置 |
FR2802705B1 (fr) * | 1999-12-16 | 2002-08-09 | St Microelectronics Sa | Procede de fabrication d'un reseau de lignes nanometriques en silicium monocristallin et dispositif obtenu |
US6355561B1 (en) | 2000-11-21 | 2002-03-12 | Micron Technology, Inc. | ALD method to improve surface coverage |
SG98018A1 (en) * | 2000-12-08 | 2003-08-20 | Inst Materials Research & Eng | A method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure |
US6743474B1 (en) * | 2001-10-25 | 2004-06-01 | Lsi Logic Corporation | Method for growing thin films |
US7426067B1 (en) | 2001-12-17 | 2008-09-16 | Regents Of The University Of Colorado | Atomic layer deposition on micro-mechanical devices |
US6770536B2 (en) * | 2002-10-03 | 2004-08-03 | Agere Systems Inc. | Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate |
US7553686B2 (en) * | 2002-12-17 | 2009-06-30 | The Regents Of The University Of Colorado, A Body Corporate | Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices |
US8563966B2 (en) * | 2011-12-30 | 2013-10-22 | Khalifa University of Science, Technology & Research (KUSTAR) | Nano metal particles based tunneling field effect transistor and nano-switch |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02162717A (ja) * | 1988-12-15 | 1990-06-22 | Fujitsu Ltd | 量子細線の形成方法 |
US5013683A (en) * | 1989-01-23 | 1991-05-07 | The Regents Of The University Of California | Method for growing tilted superlattices |
JPH02206112A (ja) * | 1989-02-06 | 1990-08-15 | Nippon Telegr & Teleph Corp <Ntt> | 電子波干渉素子の製造方法 |
JPH02283695A (ja) * | 1989-04-26 | 1990-11-21 | Mitsubishi Electric Corp | 分子線結晶成長法 |
US5134091A (en) * | 1989-09-29 | 1992-07-28 | National Research Institute For Metals | Quantum effective device and process for its production |
JPH03233926A (ja) * | 1990-02-08 | 1991-10-17 | Fujitsu Ltd | エピタキシャル成長用基板 |
JPH04105313A (ja) * | 1990-08-24 | 1992-04-07 | Nec Corp | 量子箱の製造方法 |
JPH04154114A (ja) * | 1990-10-18 | 1992-05-27 | Agency Of Ind Science & Technol | 結晶成長方法 |
JPH04154113A (ja) * | 1990-10-18 | 1992-05-27 | Agency Of Ind Science & Technol | 結晶成長方法 |
WO1992012528A1 (en) * | 1991-01-11 | 1992-07-23 | Hitachi Limited | Surface atom machining method and apparatus |
JPH088396B2 (ja) * | 1991-08-01 | 1996-01-29 | 東京工業大学長 | 多次元量子井戸素子およびその製造方法 |
-
1994
- 1994-04-01 TW TW083102899A patent/TW241372B/zh active
- 1994-04-05 WO PCT/JP1994/000561 patent/WO1994023445A1/ja active Application Filing
- 1994-04-05 US US08/347,416 patent/US5746826A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1994023445A1 (en) | 1994-10-13 |
US5746826A (en) | 1998-05-05 |