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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW83108636ApriorityCriticalpatent/TW238404B/en
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Publication of TW238404BpublicationCriticalpatent/TW238404B/en
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Semiconductor Memories
(AREA)
Abstract
A fabrication of twin-well suitable for the fabrication of the first-type and the second-type well of semiconductor substrate includes the following steps: 1. doping the first-type dopant into the semiconductor substrate; 2. forming shielding on the designated first-type well area; 3. doping the second-type dopant into the designated second-type well area on the semiconductor substrate with the shielding as mask; 4. forming the first-type and second-type well area by driving in the first-type dopant and the second-type dopant.
TW83108636A1994-09-171994-09-17Fabrication of twin-well
TW238404B
(en)