TW237564B - - Google Patents

Info

Publication number
TW237564B
TW237564B TW082108516A TW82108516A TW237564B TW 237564 B TW237564 B TW 237564B TW 082108516 A TW082108516 A TW 082108516A TW 82108516 A TW82108516 A TW 82108516A TW 237564 B TW237564 B TW 237564B
Authority
TW
Taiwan
Application number
TW082108516A
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Application granted granted Critical
Publication of TW237564B publication Critical patent/TW237564B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
TW082108516A 1992-10-07 1993-10-14 TW237564B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92203082 1992-10-07

Publications (1)

Publication Number Publication Date
TW237564B true TW237564B (zh) 1995-01-01

Family

ID=8210951

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082108516A TW237564B (zh) 1992-10-07 1993-10-14

Country Status (7)

Country Link
US (1) US5395778A (zh)
JP (1) JPH06236974A (zh)
KR (1) KR100292159B1 (zh)
CN (1) CN1050934C (zh)
CA (1) CA2107602C (zh)
DE (1) DE69320582T2 (zh)
TW (1) TW237564B (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW322591B (zh) * 1996-02-09 1997-12-11 Handotai Energy Kenkyusho Kk
TW347567B (en) * 1996-03-22 1998-12-11 Philips Eloctronics N V Semiconductor device and method of manufacturing a semiconductor device
US6429120B1 (en) 2000-01-18 2002-08-06 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
TW332342B (en) * 1996-11-11 1998-05-21 Mos Electronics Taiwan Inc Structure and fabrication method of split-gate flash memory
TW360951B (en) * 1997-04-01 1999-06-11 Nxp Bv Method of manufacturing a semiconductor device
US5885871A (en) * 1997-07-31 1999-03-23 Stmicrolelectronics, Inc. Method of making EEPROM cell structure
US6297111B1 (en) * 1997-08-20 2001-10-02 Advanced Micro Devices Self-aligned channel transistor and method for making same
TW420874B (en) 1998-05-04 2001-02-01 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device
US6159795A (en) * 1998-07-02 2000-12-12 Advanced Micro Devices, Inc. Low voltage junction and high voltage junction optimization for flash memory
US6309936B1 (en) * 1998-09-30 2001-10-30 Advanced Micro Devices, Inc. Integrated formation of LDD and non-LDD semiconductor devices
EP0993036A1 (en) * 1998-10-09 2000-04-12 STMicroelectronics S.r.l. Method of manufacturing an integrated semiconductor device comprising a floating gate field-effect transistor and a logic-field effect transistor, and corresponding device
EP1082760A1 (en) 1999-03-17 2001-03-14 Koninklijke Philips Electronics N.V. Method of manufacturing a floating gate field-effect transistor
US6074908A (en) * 1999-05-26 2000-06-13 Taiwan Semiconductor Manufacturing Company Process for making merged integrated circuits having salicide FETS and embedded DRAM circuits
US6235587B1 (en) * 1999-10-13 2001-05-22 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor device with reduced arc loss in peripheral circuitry region
US6552396B1 (en) * 2000-03-14 2003-04-22 International Business Machines Corporation Matched transistors and methods for forming the same
DE10101270A1 (de) * 2001-01-12 2002-07-25 Infineon Technologies Ag Verfahren zur Herstellung von eingebetteten nichtflüchtigen Halbleiterspeicherzellen
KR100666615B1 (ko) * 2004-04-14 2007-01-09 매그나칩 반도체 유한회사 플래쉬 메모리 소자
US8133783B2 (en) * 2007-10-26 2012-03-13 Hvvi Semiconductors, Inc. Semiconductor device having different structures formed simultaneously
US7919801B2 (en) * 2007-10-26 2011-04-05 Hvvi Semiconductors, Inc. RF power transistor structure and a method of forming the same
US8125044B2 (en) * 2007-10-26 2012-02-28 Hvvi Semiconductors, Inc. Semiconductor structure having a unidirectional and a bidirectional device and method of manufacture
US9660044B2 (en) * 2013-09-05 2017-05-23 Nxp Usa, Inc. Power field effect transistor, a power field effect transistor device and a method of manufacturing a power field effect transistor
CN107425069B (zh) * 2017-07-10 2020-04-24 东南大学 面向物联网的有热电转换的soi基ldmos功率管

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974677A (ja) * 1982-10-22 1984-04-27 Ricoh Co Ltd 半導体装置及びその製造方法
IT1213249B (it) * 1984-11-26 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori.
US4598460A (en) * 1984-12-10 1986-07-08 Solid State Scientific, Inc. Method of making a CMOS EPROM with independently selectable thresholds
US4775642A (en) * 1987-02-02 1988-10-04 Motorola, Inc. Modified source/drain implants in a double-poly non-volatile memory process
IT1225873B (it) * 1987-07-31 1990-12-07 Sgs Microelettrica S P A Catan Procedimento per la fabbricazione di celle di memoria eprom cmos con riduzione del numero di fasi di mascheratura.
US4859619A (en) * 1988-07-15 1989-08-22 Atmel Corporation EPROM fabrication process forming tub regions for high voltage devices
JPH0766946B2 (ja) * 1989-03-31 1995-07-19 株式会社東芝 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR100292159B1 (ko) 2001-09-17
JPH06236974A (ja) 1994-08-23
CN1086045A (zh) 1994-04-27
US5395778A (en) 1995-03-07
DE69320582T2 (de) 1999-04-01
KR940010394A (ko) 1994-05-26
CA2107602A1 (en) 1994-04-08
CA2107602C (en) 2004-01-20
CN1050934C (zh) 2000-03-29
DE69320582D1 (de) 1998-10-01

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