TW234216B - - Google Patents

Info

Publication number
TW234216B
TW234216B TW081107227A TW81107227A TW234216B TW 234216 B TW234216 B TW 234216B TW 081107227 A TW081107227 A TW 081107227A TW 81107227 A TW81107227 A TW 81107227A TW 234216 B TW234216 B TW 234216B
Authority
TW
Taiwan
Application number
TW081107227A
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW234216B publication Critical patent/TW234216B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW081107227A 1991-04-04 1992-09-15 TW234216B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/680,662 US5315598A (en) 1991-04-04 1991-04-04 Method to reduce burn-in time and inducing infant failure

Publications (1)

Publication Number Publication Date
TW234216B true TW234216B (zh) 1994-11-11

Family

ID=24731996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081107227A TW234216B (zh) 1991-04-04 1992-09-15

Country Status (4)

Country Link
US (1) US5315598A (zh)
JP (1) JP3308297B2 (zh)
KR (1) KR100249641B1 (zh)
TW (1) TW234216B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391984A (en) * 1991-11-01 1995-02-21 Sgs-Thomson Microelectronics, Inc. Method and apparatus for testing integrated circuit devices
US5400343A (en) * 1992-02-28 1995-03-21 Intel Corporation Apparatus and method for defective column detection for semiconductor memories
KR0122100B1 (ko) * 1994-03-10 1997-11-26 김광호 스트레스회로를 가지는 반도체집적회로 및 그 스트레스전압공급방법
US5440517A (en) * 1994-08-15 1995-08-08 Micron Technology, Inc. DRAMs having on-chip row copy circuits for use in testing and video imaging and method for operating same
US5877956A (en) 1996-12-23 1999-03-02 Micron Electronics, Inc. System for burning in and diagnostically testing a computer
KR19990025828A (ko) * 1997-09-18 1999-04-06 윤종용 이중 포트 집적회로 소자의 번-인 검사방법
KR100269322B1 (ko) * 1998-01-16 2000-10-16 윤종용 스트레스용전압을이용하여메모리를테스팅하는기능을갖는집적회로및그의메모리테스트방법
US6175812B1 (en) 1998-02-26 2001-01-16 Micron Technology, Inc. Method and system for dynamic duration burn-in
KR100640575B1 (ko) * 2000-12-18 2006-10-31 삼성전자주식회사 디지털 신호를 아날로그 신호로 변환시키는 변환기에서결함이 있는 스위치들을 검출하는 테스트시간을감소시키는 디코더
US20020116852A1 (en) * 2001-02-27 2002-08-29 Kock Lori Ann Mat for visual artwork and method of making same
US6455336B1 (en) 2001-08-27 2002-09-24 International Business Machines Corporation Power reduction method and design technique for burn-in
DE10326317B4 (de) * 2003-06-11 2007-05-10 Infineon Technologies Ag Testsystem zum Testen von integrierten Bausteinen
JP4982120B2 (ja) * 2006-07-04 2012-07-25 株式会社東芝 強誘電体メモリの試験方法及び強誘電体メモリ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527254A (en) * 1982-11-15 1985-07-02 International Business Machines Corporation Dynamic random access memory having separated VDD pads for improved burn-in
US4654849B1 (en) * 1984-08-31 1999-06-22 Texas Instruments Inc High speed concurrent testing of dynamic read/write memory array
US5155701A (en) * 1985-02-08 1992-10-13 Hitachi, Ltd. Semiconductor integrated circuit device and method of testing the same
IT1201837B (it) * 1986-07-22 1989-02-02 Sgs Microelettronica Spa Sistema per la verifica della funzionalita' e delle caratteristiche di dispositivi a semiconduttore di tipo eprom durante il "burn-in"
US4751679A (en) * 1986-12-22 1988-06-14 Motorola, Inc. Gate stress test of a MOS memory
JPH02177100A (ja) * 1988-12-27 1990-07-10 Nec Corp 半導体記憶装置のテスト回路
JPH07105160B2 (ja) * 1989-05-20 1995-11-13 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
US5161159A (en) * 1990-08-17 1992-11-03 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with multiple clocking for test mode entry

Also Published As

Publication number Publication date
US5315598A (en) 1994-05-24
JPH05144910A (ja) 1993-06-11
KR100249641B1 (ko) 2000-03-15
JP3308297B2 (ja) 2002-07-29
KR920020519A (ko) 1992-11-21

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