TW230831B - - Google Patents

Info

Publication number
TW230831B
TW230831B TW081107077A TW81107077A TW230831B TW 230831 B TW230831 B TW 230831B TW 081107077 A TW081107077 A TW 081107077A TW 81107077 A TW81107077 A TW 81107077A TW 230831 B TW230831 B TW 230831B
Authority
TW
Taiwan
Application number
TW081107077A
Other languages
Chinese (zh)
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of TW230831B publication Critical patent/TW230831B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
TW081107077A 1989-11-10 1990-11-16 TW230831B (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29262789 1989-11-10
JP02271555A JP3041931B2 (ja) 1989-11-10 1990-10-08 Ｍｉｓトランジスタを備えた半導体集積回路

Publications (1)

Publication Number Publication Date
TW230831B true TW230831B (ja) 1994-09-21

Family

ID=17784249

Family Applications (2)

Application Number Title Priority Date Filing Date
TW081107077A TW230831B (ja) 1989-11-10 1990-11-16
TW081107078A TW273041B (ja) 1989-11-10 1990-11-16

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW081107078A TW273041B (ja) 1989-11-10 1990-11-16

Country Status (3)

Country Link
JP (1) JP3041931B2 (ja)
KR (1) KR0164591B1 (ja)
TW (2) TW230831B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685160A (ja) * 1992-08-31 1994-03-25 Nec Corp 半導体集積回路装置
WO2023223501A1 (ja) * 2022-05-19 2023-11-23 株式会社ソシオネクスト 半導体装置

Also Published As

Publication number Publication date
JPH03224270A (ja) 1991-10-03
KR0164591B1 (ko) 1999-01-15
KR910010704A (ko) 1991-06-29
JP3041931B2 (ja) 2000-05-15
TW273041B (ja) 1996-03-21

Similar Documents

Publication Publication Date Title
DE8901172U1 (ja)
DE8900543U1 (ja)
DE8904850U1 (ja)
DE8905298U1 (ja)
DE8901144U1 (ja)
DE8900806U1 (ja)
DE8902915U1 (ja)
DE4092013T1 (ja)
DE8900863U1 (ja)
DE4090309T (ja)
DE8900928U1 (ja)
DE8900120U1 (ja)
TW273041B (ja)
DE8905052U1 (ja)
DE8905121U1 (ja)
DE8903625U1 (ja)
DE8901082U1 (ja)
DE8903349U1 (ja)
DE8904074U1 (ja)
DE8900372U1 (ja)
DE8901249U1 (ja)
DE8905143U1 (ja)
DE8902675U1 (ja)
DE8902333U1 (ja)
DE8900865U1 (ja)