TW230822B - - Google Patents
Info
- Publication number
- TW230822B TW230822B TW083101677A TW83101677A TW230822B TW 230822 B TW230822 B TW 230822B TW 083101677 A TW083101677 A TW 083101677A TW 83101677 A TW83101677 A TW 83101677A TW 230822 B TW230822 B TW 230822B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2911—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4033693A JP2642031B2 (ja) | 1992-05-19 | 1993-03-02 | 化合物半導体の液相エピタキシャル成長方法及び化合物半導体単結晶基板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW230822B true TW230822B (https=) | 1994-09-21 |
Family
ID=12577793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083101677A TW230822B (https=) | 1993-03-02 | 1994-02-28 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US5514903A (https=) |
| KR (1) | KR0156486B1 (https=) |
| TW (1) | TW230822B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3207146B2 (ja) * | 1997-12-25 | 2001-09-10 | ローム株式会社 | 半導体装置の製法 |
| KR100265328B1 (ko) * | 1998-04-22 | 2000-09-15 | 김영환 | 반구형 그레인을 갖는 폴리실리콘 박막의 표면적 변화율 측정방법과 그를 이용한 정전용량 측정 방법 및 장치 |
| CN1543518A (zh) * | 2001-07-05 | 2004-11-03 | Axt | 以坚固支座、碳掺杂和电阻率控制及温度梯度控制来生长半导体晶体的方法和装置 |
| US7067849B2 (en) | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
| US6949395B2 (en) * | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
| US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
| EP1605498A1 (en) * | 2004-06-11 | 2005-12-14 | S.O.I. Tec Silicon on Insulator Technologies S.A. | A method of manufacturing a semiconductor wafer |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3877052A (en) * | 1973-12-26 | 1975-04-08 | Bell Telephone Labor Inc | Light-emitting semiconductor apparatus for optical fibers |
| US4342148A (en) * | 1981-02-04 | 1982-08-03 | Northern Telecom Limited | Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy |
| US4422888A (en) * | 1981-02-27 | 1983-12-27 | Xerox Corporation | Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition |
| JPS63256600A (ja) * | 1987-04-15 | 1988-10-24 | Hitachi Cable Ltd | Ｇａ↓１↓−↓ｘＡｌ↓ｘＡｓエピタキシヤルウエハの製造方法 |
| JP2953468B2 (ja) * | 1989-06-21 | 1999-09-27 | 三菱化学株式会社 | 化合物半導体装置及びその表面処理加工方法 |
| US5032366A (en) * | 1990-04-30 | 1991-07-16 | Union Carbide Coatings Service Technology Corporation | Boron nitride boat and process for producing it |
| JPH04343484A (ja) * | 1991-05-21 | 1992-11-30 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
| US5346581A (en) * | 1993-04-01 | 1994-09-13 | At&T Bell Laboratories | Method of making a compound semiconductor device |
-
1994
- 1994-02-28 TW TW083101677A patent/TW230822B/zh not_active IP Right Cessation
- 1994-03-02 KR KR1019940003946A patent/KR0156486B1/ko not_active Expired - Lifetime
-
1995
- 1995-03-03 US US08/400,271 patent/US5514903A/en not_active Expired - Lifetime
- 1995-05-26 US US08/451,572 patent/US5639299A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR0156486B1 (ko) | 1998-10-15 |
| US5639299A (en) | 1997-06-17 |
| KR940022676A (ko) | 1994-10-21 |
| US5514903A (en) | 1996-05-07 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |