TW230822B - - Google Patents

Info

Publication number
TW230822B
TW230822B TW083101677A TW83101677A TW230822B TW 230822 B TW230822 B TW 230822B TW 083101677 A TW083101677 A TW 083101677A TW 83101677 A TW83101677 A TW 83101677A TW 230822 B TW230822 B TW 230822B
Authority
TW
Taiwan
Application number
TW083101677A
Other languages
Chinese (zh)
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4033693A external-priority patent/JP2642031B2/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of TW230822B publication Critical patent/TW230822B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW083101677A 1993-03-02 1994-02-28 TW230822B (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4033693A JP2642031B2 (ja) 1992-05-19 1993-03-02 化合物半導体の液相エピタキシャル成長方法及び化合物半導体単結晶基板

Publications (1)

Publication Number Publication Date
TW230822B true TW230822B (cg-RX-API-DMAC7.html) 1994-09-21

Family

ID=12577793

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083101677A TW230822B (cg-RX-API-DMAC7.html) 1993-03-02 1994-02-28

Country Status (3)

Country Link
US (2) US5514903A (cg-RX-API-DMAC7.html)
KR (1) KR0156486B1 (cg-RX-API-DMAC7.html)
TW (1) TW230822B (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3207146B2 (ja) * 1997-12-25 2001-09-10 ローム株式会社 半導体装置の製法
KR100265328B1 (ko) * 1998-04-22 2000-09-15 김영환 반구형 그레인을 갖는 폴리실리콘 박막의 표면적 변화율 측정방법과 그를 이용한 정전용량 측정 방법 및 장치
JP4324467B2 (ja) * 2001-07-05 2009-09-02 エーエックスティー，インコーポレーテッド 炭素ドーピング、抵抗率制御、温度勾配制御を伴う、剛性サポートを備える半導体結晶を成長させるための方法および装置
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
EP1605498A1 (en) * 2004-06-11 2005-12-14 S.O.I. Tec Silicon on Insulator Technologies S.A. A method of manufacturing a semiconductor wafer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3877052A (en) * 1973-12-26 1975-04-08 Bell Telephone Labor Inc Light-emitting semiconductor apparatus for optical fibers
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4422888A (en) * 1981-02-27 1983-12-27 Xerox Corporation Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition
JPS63256600A (ja) * 1987-04-15 1988-10-24 Hitachi Cable Ltd Ｇａ↓１↓−↓ｘＡｌ↓ｘＡｓエピタキシヤルウエハの製造方法
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
US5032366A (en) * 1990-04-30 1991-07-16 Union Carbide Coatings Service Technology Corporation Boron nitride boat and process for producing it
JPH04343484A (ja) * 1991-05-21 1992-11-30 Eastman Kodak Japan Kk 発光ダイオードアレイ
US5346581A (en) * 1993-04-01 1994-09-13 At&T Bell Laboratories Method of making a compound semiconductor device

Also Published As

Publication number Publication date
US5639299A (en) 1997-06-17
KR940022676A (ko) 1994-10-21
US5514903A (en) 1996-05-07
KR0156486B1 (ko) 1998-10-15

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent