TW228613B - - Google Patents

Info

Publication number
TW228613B
TW228613B TW082108570A TW82108570A TW228613B TW 228613 B TW228613 B TW 228613B TW 082108570 A TW082108570 A TW 082108570A TW 82108570 A TW82108570 A TW 82108570A TW 228613 B TW228613 B TW 228613B
Authority
TW
Taiwan
Application number
TW082108570A
Other languages
Chinese (zh)
Original Assignee
Cold Star Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cold Star Co Ltd filed Critical Cold Star Co Ltd
Application granted granted Critical
Publication of TW228613B publication Critical patent/TW228613B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6328Deposition from the gas or vapour phase
    • H10P14/6334Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/013Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332Making the insulator
    • H10D64/01336Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
TW082108570A 1992-10-20 1993-10-15 TW228613B (th)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920019239A KR960002066B1 (ko) 1992-10-20 1992-10-20 옥시 나이트라이드 제조방법

Publications (1)

Publication Number Publication Date
TW228613B true TW228613B (th) 1994-08-21

Family

ID=19341412

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082108570A TW228613B (th) 1992-10-20 1993-10-15

Country Status (4)

Country Link
JP (1) JPH06209009A (th)
KR (1) KR960002066B1 (th)
DE (1) DE4335457A1 (th)
TW (1) TW228613B (th)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5103478B2 (ja) 2007-09-10 2012-12-19 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法
JP4902716B2 (ja) 2008-11-20 2012-03-21 株式会社日立国際電気 不揮発性半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
DE4335457A1 (de) 1994-04-21
JPH06209009A (ja) 1994-07-26
KR960002066B1 (ko) 1996-02-10
KR940010209A (ko) 1994-05-24

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