TW221081B - - Google Patents

Info

Publication number
TW221081B
TW221081B TW081104891A TW81104891A TW221081B TW 221081 B TW221081 B TW 221081B TW 081104891 A TW081104891 A TW 081104891A TW 81104891 A TW81104891 A TW 81104891A TW 221081 B TW221081 B TW 221081B
Authority
TW
Taiwan
Application number
TW081104891A
Other languages
Chinese (zh)
Original Assignee
Semiconductor Energy Res Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Res Co Ltd filed Critical Semiconductor Energy Res Co Ltd
Application granted granted Critical
Publication of TW221081B publication Critical patent/TW221081B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66757Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60RVEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
    • B60R25/00Fittings or systems for preventing or indicating unauthorised use or theft of vehicles
    • B60R25/01Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens
    • B60R25/04Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens operating on the propulsion system, e.g. engine or drive motor
    • B60R25/06Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens operating on the propulsion system, e.g. engine or drive motor operating on the vehicle transmission
    • B60R25/066Locking of hand actuated control actuating means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW081104891A 1992-03-26 1992-06-22 TW221081B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10047992 1992-03-26
JP4108489A JPH05326429A (en) 1992-03-26 1992-04-01 Method and apparatus for laser treatment

Publications (1)

Publication Number Publication Date
TW221081B true TW221081B (en) 1994-02-11

Family

ID=14275060

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081104891A TW221081B (en) 1992-03-26 1992-06-22

Country Status (3)

Country Link
JP (2) JPH05326429A (en)
KR (1) KR960008499B1 (en)
TW (1) TW221081B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424244A (en) 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
KR100291971B1 (en) 1993-10-26 2001-10-24 야마자끼 순페이 Substrate processing apparatus and method and thin film semiconductor device manufacturing method
US5616935A (en) 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US6562705B1 (en) 1999-10-26 2003-05-13 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing semiconductor element
KR20020085577A (en) * 2001-05-09 2002-11-16 아남반도체 주식회사 Method for manufacturing a gate electrode
JP4387091B2 (en) 2002-11-05 2009-12-16 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor
JP4737366B2 (en) * 2004-02-25 2011-07-27 セイコーエプソン株式会社 Manufacturing method of semiconductor device
JP2008243975A (en) * 2007-03-26 2008-10-09 Japan Steel Works Ltd:The Method of crystallizing amorphous thin film, and crystallization equipment
CN114465086B (en) * 2022-01-19 2024-03-15 河南仕佳光子科技股份有限公司 Preparation method of DFB laser optical film

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50117374A (en) * 1974-02-28 1975-09-13
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device
JPS5630721A (en) * 1979-08-21 1981-03-27 Nec Corp Diffusing device of selected impurity
JPS57162339A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor device
JPS62130562A (en) * 1985-11-30 1987-06-12 Nippon Gakki Seizo Kk Manufacture of field effect transistor
JP2611236B2 (en) * 1987-07-03 1997-05-21 ソニー株式会社 Semiconductor manufacturing equipment
JPH01101625A (en) * 1987-10-15 1989-04-19 Komatsu Ltd Manufacture of semiconductor device
JP2628064B2 (en) * 1988-04-11 1997-07-09 東京エレクトロン株式会社 Object processing equipment
JPH02222545A (en) * 1989-02-23 1990-09-05 Semiconductor Energy Lab Co Ltd Manufacture of thin film transistor
JP2764425B2 (en) * 1989-02-27 1998-06-11 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor
JP2805321B2 (en) * 1989-02-28 1998-09-30 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor

Also Published As

Publication number Publication date
KR930020566A (en) 1993-10-20
JPH05326430A (en) 1993-12-10
JP3375988B2 (en) 2003-02-10
KR960008499B1 (en) 1996-06-26
JPH05326429A (en) 1993-12-10

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees