TW221081B - - Google Patents
Info
- Publication number
- TW221081B TW221081B TW081104891A TW81104891A TW221081B TW 221081 B TW221081 B TW 221081B TW 081104891 A TW081104891 A TW 081104891A TW 81104891 A TW81104891 A TW 81104891A TW 221081 B TW221081 B TW 221081B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R25/00—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles
- B60R25/01—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens
- B60R25/04—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens operating on the propulsion system, e.g. engine or drive motor
- B60R25/06—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens operating on the propulsion system, e.g. engine or drive motor operating on the vehicle transmission
- B60R25/066—Locking of hand actuated control actuating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10047992 | 1992-03-26 | ||
JP4108489A JPH05326429A (en) | 1992-03-26 | 1992-04-01 | Method and apparatus for laser treatment |
Publications (1)
Publication Number | Publication Date |
---|---|
TW221081B true TW221081B (en) | 1994-02-11 |
Family
ID=14275060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW081104891A TW221081B (en) | 1992-03-26 | 1992-06-22 |
Country Status (3)
Country | Link |
---|---|
JP (2) | JPH05326429A (en) |
KR (1) | KR960008499B1 (en) |
TW (1) | TW221081B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5424244A (en) | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
KR100291971B1 (en) | 1993-10-26 | 2001-10-24 | 야마자끼 순페이 | Substrate processing apparatus and method and thin film semiconductor device manufacturing method |
US5616935A (en) | 1994-02-08 | 1997-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit having N-channel and P-channel transistors |
US6884698B1 (en) | 1994-02-23 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with crystallization of amorphous silicon |
US6562705B1 (en) | 1999-10-26 | 2003-05-13 | Kabushiki Kaisha Toshiba | Method and apparatus for manufacturing semiconductor element |
KR20020085577A (en) * | 2001-05-09 | 2002-11-16 | 아남반도체 주식회사 | Method for manufacturing a gate electrode |
JP4387091B2 (en) | 2002-11-05 | 2009-12-16 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film transistor |
JP4737366B2 (en) * | 2004-02-25 | 2011-07-27 | セイコーエプソン株式会社 | Manufacturing method of semiconductor device |
JP2008243975A (en) * | 2007-03-26 | 2008-10-09 | Japan Steel Works Ltd:The | Method of crystallizing amorphous thin film, and crystallization equipment |
CN114465086B (en) * | 2022-01-19 | 2024-03-15 | 河南仕佳光子科技股份有限公司 | Preparation method of DFB laser optical film |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50117374A (en) * | 1974-02-28 | 1975-09-13 | ||
JPS54131866A (en) * | 1978-04-05 | 1979-10-13 | Nippon Telegr & Teleph Corp <Ntt> | Heat treatment device |
JPS5630721A (en) * | 1979-08-21 | 1981-03-27 | Nec Corp | Diffusing device of selected impurity |
JPS57162339A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS62130562A (en) * | 1985-11-30 | 1987-06-12 | Nippon Gakki Seizo Kk | Manufacture of field effect transistor |
JP2611236B2 (en) * | 1987-07-03 | 1997-05-21 | ソニー株式会社 | Semiconductor manufacturing equipment |
JPH01101625A (en) * | 1987-10-15 | 1989-04-19 | Komatsu Ltd | Manufacture of semiconductor device |
JP2628064B2 (en) * | 1988-04-11 | 1997-07-09 | 東京エレクトロン株式会社 | Object processing equipment |
JPH02222545A (en) * | 1989-02-23 | 1990-09-05 | Semiconductor Energy Lab Co Ltd | Manufacture of thin film transistor |
JP2764425B2 (en) * | 1989-02-27 | 1998-06-11 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film transistor |
JP2805321B2 (en) * | 1989-02-28 | 1998-09-30 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film transistor |
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1992
- 1992-04-01 JP JP4108489A patent/JPH05326429A/en active Pending
- 1992-06-22 TW TW081104891A patent/TW221081B/zh not_active IP Right Cessation
- 1992-08-12 JP JP23776392A patent/JP3375988B2/en not_active Expired - Fee Related
- 1992-10-05 KR KR1019920018168A patent/KR960008499B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR930020566A (en) | 1993-10-20 |
JPH05326430A (en) | 1993-12-10 |
JP3375988B2 (en) | 2003-02-10 |
KR960008499B1 (en) | 1996-06-26 |
JPH05326429A (en) | 1993-12-10 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |