TW215492B - An improvement method in producing infrared charge couple diode (IRCCD) - Google Patents
An improvement method in producing infrared charge couple diode (IRCCD)Info
- Publication number
- TW215492B TW215492B TW81107695A TW81107695A TW215492B TW 215492 B TW215492 B TW 215492B TW 81107695 A TW81107695 A TW 81107695A TW 81107695 A TW81107695 A TW 81107695A TW 215492 B TW215492 B TW 215492B
- Authority
- TW
- Taiwan
- Prior art keywords
- irccd
- mask
- contact window
- metal
- improvement method
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
An improvement method in producing infrared charge couple diode (IRCCD), which comprises of the following steps: (1) uses conventional method to produce an IRCCD of Pt-Si Schottky-barrier diode structure, the structure has first and second oxide layers which have large etching ratio difference between them; (2) adds first mask, etches the upmost first oxide layer of the contact window, and lefts the area with only the second oxide layer; (3) removes the first mask, adds second mask, and etches the contact window area, which is to be removed, to make contact window; (4) uses metal spattering method to deposit metal on the contact window and on the IRCCD reflecting area, and undergoes metal etching, and in the mean time undergoes metal linking and reverberator production; and (5) after the completion of metal etching, removes the third mask, deposits a protection layer to complete the production of the IRCCD.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW81107695A TW215492B (en) | 1992-09-29 | 1992-09-29 | An improvement method in producing infrared charge couple diode (IRCCD) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW81107695A TW215492B (en) | 1992-09-29 | 1992-09-29 | An improvement method in producing infrared charge couple diode (IRCCD) |
Publications (1)
Publication Number | Publication Date |
---|---|
TW215492B true TW215492B (en) | 1993-11-01 |
Family
ID=51357230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW81107695A TW215492B (en) | 1992-09-29 | 1992-09-29 | An improvement method in producing infrared charge couple diode (IRCCD) |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW215492B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI501386B (en) * | 2013-03-22 | 2015-09-21 | Nat Univ Kaohsiung | Far infrared sensor chip |
-
1992
- 1992-09-29 TW TW81107695A patent/TW215492B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI501386B (en) * | 2013-03-22 | 2015-09-21 | Nat Univ Kaohsiung | Far infrared sensor chip |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |