TW215492B - An improvement method in producing infrared charge couple diode (IRCCD) - Google Patents

An improvement method in producing infrared charge couple diode (IRCCD)

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Publication number
TW215492B
TW215492B TW81107695A TW81107695A TW215492B TW 215492 B TW215492 B TW 215492B TW 81107695 A TW81107695 A TW 81107695A TW 81107695 A TW81107695 A TW 81107695A TW 215492 B TW215492 B TW 215492B
Authority
TW
Taiwan
Prior art keywords
irccd
mask
contact window
metal
improvement method
Prior art date
Application number
TW81107695A
Other languages
Chinese (zh)
Inventor
Harn-Yuh Chang
Her-Ching Chyan
Original Assignee
Chung Shan Inst Of Science
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chung Shan Inst Of Science, Ind Tech Res Inst filed Critical Chung Shan Inst Of Science
Priority to TW81107695A priority Critical patent/TW215492B/en
Application granted granted Critical
Publication of TW215492B publication Critical patent/TW215492B/en

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Abstract

An improvement method in producing infrared charge couple diode (IRCCD), which comprises of the following steps: (1) uses conventional method to produce an IRCCD of Pt-Si Schottky-barrier diode structure, the structure has first and second oxide layers which have large etching ratio difference between them; (2) adds first mask, etches the upmost first oxide layer of the contact window, and lefts the area with only the second oxide layer; (3) removes the first mask, adds second mask, and etches the contact window area, which is to be removed, to make contact window; (4) uses metal spattering method to deposit metal on the contact window and on the IRCCD reflecting area, and undergoes metal etching, and in the mean time undergoes metal linking and reverberator production; and (5) after the completion of metal etching, removes the third mask, deposits a protection layer to complete the production of the IRCCD.
TW81107695A 1992-09-29 1992-09-29 An improvement method in producing infrared charge couple diode (IRCCD) TW215492B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW81107695A TW215492B (en) 1992-09-29 1992-09-29 An improvement method in producing infrared charge couple diode (IRCCD)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW81107695A TW215492B (en) 1992-09-29 1992-09-29 An improvement method in producing infrared charge couple diode (IRCCD)

Publications (1)

Publication Number Publication Date
TW215492B true TW215492B (en) 1993-11-01

Family

ID=51357230

Family Applications (1)

Application Number Title Priority Date Filing Date
TW81107695A TW215492B (en) 1992-09-29 1992-09-29 An improvement method in producing infrared charge couple diode (IRCCD)

Country Status (1)

Country Link
TW (1) TW215492B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI501386B (en) * 2013-03-22 2015-09-21 Nat Univ Kaohsiung Far infrared sensor chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI501386B (en) * 2013-03-22 2015-09-21 Nat Univ Kaohsiung Far infrared sensor chip

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