TW202427767A - 絕緣體上矽晶圓及其製備方法與半導體裝置 - Google Patents

絕緣體上矽晶圓及其製備方法與半導體裝置 Download PDF

Info

Publication number
TW202427767A
TW202427767A TW112148639A TW112148639A TW202427767A TW 202427767 A TW202427767 A TW 202427767A TW 112148639 A TW112148639 A TW 112148639A TW 112148639 A TW112148639 A TW 112148639A TW 202427767 A TW202427767 A TW 202427767A
Authority
TW
Taiwan
Prior art keywords
sub
silicon
insulator wafer
semiconductor device
preparation
Prior art date
Application number
TW112148639A
Other languages
English (en)
Inventor
馬乾志
孫晨光
王彥君
姚祖英
馬坤
張雨航
張奇
魏啟旺
羅朝陽
谷海雲
Original Assignee
大陸商中環領先半導體材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商中環領先半導體材料有限公司 filed Critical 大陸商中環領先半導體材料有限公司
Publication of TW202427767A publication Critical patent/TW202427767A/zh

Links

Abstract

本申請公開了一種絕緣體上矽晶圓及其製備方法與半導體裝置，絕緣體上矽晶圓包括：第一襯底和頂矽層，第一襯底包括第一表面，其中，第一襯底具有沿第一方向的最大尺寸D <sub>max</sub>，第一表面具有沿第一方向的第二尺寸D­ <sub>2</sub>，滿足100μm≤D <sub>max</sub>-D­ <sub>2</sub>≤500μm；頂矽層設於第一表面上。本申請提供的絕緣體上矽晶圓，通過優化第一襯底和第一表面的邊沿尺寸，為頂矽層的製備提供了合適的位置，有利於獲得具有較窄臺階寬度的絕緣體上矽晶圓。本申請還提供製備上述絕緣體上矽晶圓的方法，以及包括上述絕緣體上矽晶圓的半導體裝置。
TW112148639A 2022-12-21 2023-12-14 絕緣體上矽晶圓及其製備方法與半導體裝置 TW202427767A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2022116525199 2022-12-21

Publications (1)

Publication Number Publication Date
TW202427767A true TW202427767A (zh) 2024-07-01

Family

ID=

Similar Documents

Publication Publication Date Title
WO2002050345A3 (en) Semiconductor compliant substrate having a graded monocrystalline layer
EP1526567A3 (en) Bonded semiconductor device having alignment mark and fabrication method for the same
CN100570823C (zh) 一种使用缩颈外延获得低位错密度外延薄膜的方法
EP1220336A3 (en) Separation method for Gallium Nitride devices on lattice-mismatch substrates
WO2003094218A3 (en) Method of growing monocrystalline oxide having a semiconductor device thereon
CN101002332A (zh) 半导体器件
TW200746430A (en) Method of manufacturing semiconductor device, and semiconductor device
WO2007114983A3 (en) Method of making a multiple crystal orientation semiconductor device
WO2002047127A3 (en) Pyroelectric device on a monocrystalline semiconductor substrate
KR970023995A (ko) 트렌치 소자분리 방법
US11710662B2 (en) Reusable wide bandgap semiconductor substrate
US20170365700A1 (en) High electron mobility transistor (hemt) device and method of making the same
WO2004060792A3 (en) Method of forming semiconductor devices through epitaxy
CN110896025A (zh) 晶圆键合方法以及键合后晶圆
US4696093A (en) Fabrication of Schottky barrier MOSFETS
TW202427767A (zh) 絕緣體上矽晶圓及其製備方法與半導體裝置
US9607880B2 (en) Silicon-on-insulator substrate and method of manufacturing thereof
EP4057323B1 (en) Method for thinning a silicon carbide substrate
TW200509230A (en) Method of forming gate oxide layer in semiconductor device
US20040224469A1 (en) Method for forming a strained semiconductor substrate
CN107658227A (zh) 源/漏的形成方法以及半导体器件的形成方法
KR102104376B1 (ko) 도펀트 확산을 이용한 반도체 소자의 제조 방법
EP3300101A1 (en) Method of planarising a surface
JPS6420663A (en) Manufacture of semiconductor device
WO2003009377A3 (en) Semiconductor structures with coplaner surfaces