TW202414812A - Led wafer, circuit board, display and method for making same - Google Patents

Led wafer, circuit board, display and method for making same Download PDF

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TW202414812A
TW202414812A TW111136955A TW111136955A TW202414812A TW 202414812 A TW202414812 A TW 202414812A TW 111136955 A TW111136955 A TW 111136955A TW 111136955 A TW111136955 A TW 111136955A TW 202414812 A TW202414812 A TW 202414812A
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pads
electrodes
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TWI823591B (en
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李炫運
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大陸商業成光電(深圳)有限公司
大陸商業成科技(成都)有限公司
英特盛科技股份有限公司
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Embodiments of the present application relate to the field of display technology, and aim to solve the technical problem of improving production yield of displays using micro LEDs or mini LEDs as display pixels. An LED wafer, a circuit board, a display, and a method for making the display are provided. A partial area of the LED wafer is defined as an LED crystal block. The LED crystal block includes a light-transmitting substrate, a plurality of LEDs, a plurality of P electrodes and a plurality of N electrodes, and a plurality of N wirings. A row of the P electrodes and a row of the N electrodes are alternately and periodically repeated. A side of each LED away from the substrate is provided with one of the P-electrodes and one of the N-electrodes spaced apart from each other. Each of the N wirings is in direct contact with and electrically connected to the N-electrodes of all the LEDs in a corresponding row.

Description

LED晶圓、電路板、顯示器及其製備方法LED wafer, circuit board, display and manufacturing method thereof

本申請涉及顯示技術領域,具體而言,涉及一種LED晶圓、電路板、顯示器及顯示器的製備方法。The present application relates to the field of display technology, and more specifically, to an LED wafer, a circuit board, a display, and a method for manufacturing the display.

習知的利用微型發光二極體(micro light emitting diode, micro LED)或者迷你發光二極體(mini light emitting diode, mini LED)作為顯示畫素的顯示器的製備方法包括將複數micro LED或者mini LED由長晶的基材(wafer)上轉移到電路板上的巨量轉移的步驟。其中,該電路板習知包括至少兩層走線,一層走線為行走線,用於電性連接該行走線對應的所有的發光元件的P電極,另一層走線為列走線,以電性連接該列走線對應的所有的發光元件的N電極。另,該電路板還需要設置密集的貫孔,以將兩層走線中,下層的走線連接到上層走線的焊盤。然,隨著顯示器對解析度的要求越來越高,發光元件的尺寸越來越小,由於電路板最小鑽孔尺寸和最小鑽孔公差的限制,習知的電路板中,每個貫孔的面積加上公差甚至比發光元件的焊盤還要大。另,隨著顯示器對解析度的要求越來越高,相鄰的發光元件的間距亦越來越小,同樣由於電路板最小鑽孔尺寸和最小鑽孔公差的限制,習知的電路板中,相鄰的貫孔幾乎要短路在一起。是故,習知的利用micro LED或mini LED作為顯示畫素的顯示器的生產良率有待提升。A known method for preparing a display using micro light emitting diodes (micro LEDs) or mini light emitting diodes (mini LEDs) as display pixels includes a mass transfer step of transferring a plurality of micro LEDs or mini LEDs from a wafer to a circuit board. The circuit board is known to include at least two layers of wiring, one layer of wiring is a wiring, which is used to electrically connect the P electrodes of all light-emitting elements corresponding to the wiring, and the other layer of wiring is a column wiring, which is used to electrically connect the N electrodes of all light-emitting elements corresponding to the column wiring. In addition, the circuit board also needs to be provided with dense through holes to connect the wiring of the lower layer of the two layers of wiring to the pads of the wiring of the upper layer. However, as the display's resolution requirements become higher and higher, the size of the light-emitting element becomes smaller and smaller. Due to the limitations of the minimum drill hole size and the minimum drill hole tolerance of the circuit board, the area of each through hole plus the tolerance in the conventional circuit board is even larger than the pad of the light-emitting element. In addition, as the display's resolution requirements become higher and higher, the spacing between adjacent light-emitting elements becomes smaller and smaller. Also due to the limitations of the minimum drill hole size and the minimum drill hole tolerance of the circuit board, adjacent through holes in the conventional circuit board are almost short-circuited together. Therefore, the production yield of conventional displays using micro LED or mini LED as display pixels needs to be improved.

本申請第一方面提供一種LED晶圓。所述LED晶圓的部分區域定義為一個LED晶塊,所述LED晶塊包括: 透光的基材; 複數LED,間隔位於所述基材上,所述複數LED沿第一方向排佈為複數列,沿與所述第一方向交叉的第二方向排佈為複數行; 複數P電極和複數N電極,所述複數P電極和所述複數N電極為一行所述P電極和一行所述N電極交替週期性重複排佈,每個所述LED的遠離所述基材的一側間隔設置有一個所述P電極和一個所述N電極;以及 複數N極走線,每條所述N極走線與一個對應行所有的所述LED的所述N電極直接接觸並電性連接。 The first aspect of the present application provides an LED wafer. A partial area of the LED wafer is defined as an LED die, and the LED die includes: A light-transmitting substrate; A plurality of LEDs, spaced apart on the substrate, arranged as a plurality of columns along a first direction, and arranged as a plurality of rows along a second direction intersecting the first direction; A plurality of P electrodes and a plurality of N electrodes, the plurality of P electrodes and the plurality of N electrodes are arranged alternately and periodically, with one row of the P electrodes and one row of the N electrodes being arranged at intervals on a side of each LED away from the substrate; and A plurality of N-electrode traces, each of which is in direct contact with and electrically connected to the N electrodes of all the LEDs in a corresponding row.

本申請第一方面的LED晶圓,藉由一條N極走線將一行中所有的LED的N電極電性連接,使得LED晶圓在電測時,無需對應每個LED的N電極製作頂針以供電電測,而是只需對每行LED中其中一個LED對應的N電極製作頂針進行供電電測即可。是故,該LED晶圓的電測可減少製作頂針的治具成本,並且減少頂針不良的誤判率。而且,LED晶圓的基材為透光的或者說透明的,使得LED晶塊接合至電路板上後,基材無需被移除,而保留在顯示器中被覆用為透明的蓋板使用。藉此,在顯示器製備過程中,減少了將基材與LED分離的步驟,簡化製程。而且由於基材可作為透明的蓋板的功能使用,是故無需再額外設置蓋板,節省了貼合製程並降低蓋板的成本。The LED wafer of the first aspect of the present application electrically connects the N electrodes of all LEDs in a row through an N-pole wiring, so that when the LED wafer is electrically tested, it is not necessary to make a top pin corresponding to the N electrode of each LED for power supply and testing. Instead, it is only necessary to make a top pin corresponding to the N electrode of one of the LEDs in each row for power supply and testing. Therefore, the electrical testing of the LED wafer can reduce the cost of the jig for making the top pin and reduce the error rate of defective top pins. Moreover, the substrate of the LED wafer is light-transmitting or transparent, so that after the LED chip is bonded to the circuit board, the substrate does not need to be removed, but is retained in the display and covered as a transparent cover. Thereby, in the display manufacturing process, the step of separating the substrate from the LED is reduced, simplifying the process. Furthermore, since the substrate can function as a transparent cover plate, there is no need to set up an additional cover plate, thus saving the lamination process and reducing the cost of the cover plate.

本申請第二方面提供一種電路板。該電路板包括: 絕緣的基底; 複數P極走線,間隔位於所述基底上; 複數P極焊盤,間隔位於所述基底上,所述複數P極焊盤沿第一方向排佈為複數列,每一列中所有的所述P極焊盤藉由一條對應的所述P極走線電性連接,所述複數P極焊盤沿與所述第一方向交叉的第二方向排佈為複數行,每一行中相鄰的兩個所述P極焊盤絕緣且隔離;以及 複數N極焊盤,間隔位於所述基底上,所述複數N極焊盤沿所述第二方向排佈為複數行,每一行所述N極焊盤中至少有兩個所述N極焊盤,其中所述複數P極焊盤和所述複數N極焊盤為一行所述P極焊盤和一行所述N極焊盤交替週期性重複排佈;以及 驅動晶片,位於所述基底上並電性連接所述複數P極走線和所述複數N極焊盤。 The second aspect of the present application provides a circuit board. The circuit board includes: an insulating substrate; a plurality of P-pole traces, spaced apart on the substrate; a plurality of P-pole pads, spaced apart on the substrate, the plurality of P-pole pads being arranged in a plurality of rows along a first direction, all the P-pole pads in each row being electrically connected by a corresponding P-pole trace, the plurality of P-pole pads being arranged in a plurality of rows along a second direction intersecting the first direction, the two adjacent P-pole pads in each row being insulated and isolated; and A plurality of N-pole pads are arranged in a plurality of rows along the second direction, each row of the N-pole pads has at least two N-pole pads, wherein the plurality of P-pole pads and the plurality of N-pole pads are arranged alternately and periodically with one row of the P-pole pads and one row of the N-pole pads; and a driving chip is located on the substrate and electrically connected to the plurality of P-pole traces and the plurality of N-pole pads.

本申請第二方面的電路板,N極焊盤、P極焊盤及P極走線在同一線路層,且同列的用於連接LED的P極焊盤用P極走線連接在一起,無需設置大量且密集的貫孔,避免了鑽孔製程造成的電路板及顯示器的良率的下降。尤其是,習知的電路板針對LED間距越來越小的情況,貫孔的良率越差,甚至無法製作,而本申請實施例的電路板,由於其為單層LED走線設置,無需貫孔,利於良率的提升,尤其是利於高解析度利用mini LED或micro LED作為發光元件的顯示器的良率及產能的提升。In the circuit board of the second aspect of the present application, the N-pole pad, the P-pole pad and the P-pole trace are in the same circuit layer, and the P-pole pads in the same row for connecting LEDs are connected together by the P-pole trace, so there is no need to set a large number of dense through holes, thus avoiding the reduction in the yield of the circuit board and the display caused by the drilling process. In particular, the yield of the through holes of the known circuit board becomes worse and worse as the LED spacing becomes smaller and smaller, and even cannot be made. However, the circuit board of the embodiment of the present application, because it is a single-layer LED trace setting, does not need through holes, which is conducive to improving the yield, especially to improving the yield and production capacity of high-resolution displays that use mini LEDs or micro LEDs as light-emitting elements.

本申請第三方面提供一種顯示器的製備方法。該顯示器的製備方法包括: 提供本申請第二方面所述的電路板,並切割本申請第一方面所述的LED晶圓,得到所述LED晶塊;以及 將所述LED晶塊接合至所述電路板上,其中一行所述P電極對應一行所述P極焊盤,所述複數P極焊盤與所述複數P電極一一對應電性連接,一行所述N電極對應一行所述N極焊盤,所述複數N極焊盤的數量小於等於所述複數N電極的數量,每個所述N極焊盤電性連接一個對應的所述N電極,所述驅動晶片藉由一條所述P極走線、一列所述P極焊盤與一列所述LED的所述P電極電性連接,所述驅動晶片藉由一行所述N極焊盤、一條所述N極走線與一行所述LED的所述N電極電性連接。 The third aspect of the present application provides a method for preparing a display. The method for preparing the display comprises: Providing the circuit board described in the second aspect of the present application, and cutting the LED wafer described in the first aspect of the present application to obtain the LED crystal block; and The LED crystal block is bonded to the circuit board, wherein one row of the P electrodes corresponds to one row of the P electrode pads, the multiple P electrode pads are electrically connected to the multiple P electrodes one by one, one row of the N electrodes corresponds to one row of the N electrode pads, the number of the multiple N electrode pads is less than or equal to the number of the multiple N electrodes, and each N electrode pad is electrically connected to a corresponding N electrode. The driver chip is electrically connected to the P electrodes of a row of the LEDs via one P electrode trace, one row of the P electrode pads, and the driver chip is electrically connected to the N electrodes of a row of the LEDs via one row of the N electrode pads, one N electrode trace.

本申請第三方面的顯示器的製備方法,將LED晶塊整體接合至電路板上,可實現一次轉移大量的LED,相較於將大量的LED一一對位並轉移至電路板上的方式,減少了對位元次數,簡化製程,提升了巨量轉移的良率及產能。而且,該顯示器的製備方法中,LED晶塊與電路板接合後,基材無需移除,基材可作為顯示器的蓋板使用,藉此,節省了蓋板貼合成本及蓋板的材料成本。The display manufacturing method of the third aspect of the present application integrally bonds the LED crystal block to the circuit board, and can realize the transfer of a large number of LEDs at one time. Compared with the method of aligning a large number of LEDs one by one and transferring them to the circuit board, the number of alignment times is reduced, the manufacturing process is simplified, and the yield and production capacity of mass transfer are improved. Moreover, in the display manufacturing method, after the LED crystal block is bonded to the circuit board, the substrate does not need to be removed, and the substrate can be used as a cover plate of the display, thereby saving the cover plate bonding cost and the cover plate material cost.

本申請第四方面提供一種顯示器。該顯示器包括本申請第二方面所述的電路板以及與所述電路板結合的LED晶塊; 所述LED晶塊包括: 透光的基材; 複數LED,間隔位於所述基材上,所述複數LED沿第一方向排佈為複數列,沿與所述第一方向交叉的第二方向排佈為複數行; 複數P電極和複數N電極,所述複數P電極和所述複數N電極為一行所述P電極和一行所述N電極交替週期性重複排佈,每個所述LED的遠離所述基材的一側間隔設置有一個所述P電極和一個所述N電極;以及 複數N極走線,每個所述N極走線與一個對應行中所有的所述LED的所述N電極直接接觸並電性連接; 其中,一行所述P電極對應一行所述P極焊盤,所述複數P極焊盤與所述複數P電極一一對應電性連接,一行所述N電極對應一行所述N極焊盤,所述複數N極焊盤的數量小於等於所述複數N電極的數量,每個所述N極焊盤電性連接一個對應的所述N電極,所述驅動晶片藉由一條所述P極走線、一列所述P極焊盤與一列所述LED的所述P電極電性連接,所述驅動晶片藉由一行所述N極焊盤、一條所述N極走線與一行所述LED的所述N電極電性連接。 The fourth aspect of the present application provides a display. The display comprises the circuit board described in the second aspect of the present application and an LED chip combined with the circuit board; The LED chip comprises: A light-transmitting substrate; A plurality of LEDs, spaced on the substrate, arranged in a plurality of columns along a first direction and in a plurality of rows along a second direction intersecting the first direction; A plurality of P electrodes and a plurality of N electrodes, the plurality of P electrodes and the plurality of N electrodes being arranged alternately and periodically in a row of the P electrodes and a row of the N electrodes, and one P electrode and one N electrode are spaced on a side of each LED away from the substrate; and A plurality of N-pole traces, each of which is in direct contact with and electrically connected to the N electrodes of all the LEDs in a corresponding row; Among them, one row of the P electrodes corresponds to one row of the P electrode pads, the multiple P electrode pads are electrically connected to the multiple P electrodes one by one, one row of the N electrodes corresponds to one row of the N electrode pads, the number of the multiple N electrode pads is less than or equal to the number of the multiple N electrodes, each N electrode pad is electrically connected to a corresponding N electrode, the driver chip is electrically connected to the P electrodes of a row of the LEDs through one P electrode trace and one row of the P electrode pads, and the driver chip is electrically connected to the N electrodes of a row of the LEDs through one row of the N electrode pads and one N electrode trace.

本申請第四方面的顯示器中,LED的N電極藉由LED晶塊上的N極走線電性連接,LED的P電極藉由電路板上的P極走線電性連接,由於N極走線設置在LED晶塊上,而非是電路板上,使得電路板上為單層走線,且無需設置貫孔,避免了鑽孔製程造成的電路板及顯示器的良率的下降。而且,由於電路板上無需貫孔,利於電路板良率的提升,尤其利於高解析度利用mini LED或micro LED作為發光元件的顯示器的良率及產能的提升。In the display of the fourth aspect of the present application, the N-electrode of the LED is electrically connected via the N-electrode trace on the LED chip, and the P-electrode of the LED is electrically connected via the P-electrode trace on the circuit board. Since the N-electrode trace is arranged on the LED chip instead of the circuit board, the circuit board is a single-layer trace, and no through-holes are required, thus avoiding the reduction in the yield of the circuit board and the display caused by the drilling process. Moreover, since no through-holes are required on the circuit board, it is beneficial to improve the yield of the circuit board, especially to improve the yield and production capacity of high-resolution displays that use mini LEDs or micro LEDs as light-emitting elements.

圖1為習知的電路板的平面示意圖。如圖1所示,電路板包括複數N極焊盤2和P極焊盤3。其中,複數N極焊盤2和P極焊盤3的排佈為一行N極焊盤2和一行P極焊盤3交替週期性重複排佈。一個N極焊盤2和緊鄰其一個P極焊盤3為一組,以分別用於電性連接一個LED的N電極和P電極。其中,電路板還包括兩層走線,一層走線為行走線4,用於電性連接該行走線4對應的所有的LED的P電極,另一層走線為列走線(圖未示),以電性連接該列走線對應的所有的LED的N電極,其中該兩層走線藉由貫孔5使下層的走線連接到上層走線的焊盤。然,隨著顯示器對解析度的要求越來越高,LED的尺寸越來越小,由於電路板最小鑽孔尺寸直徑50μm和最小鑽孔公差單邊50μm的限制,習知的電路板中,每個貫孔的面積加上公差甚至比發光元件的焊盤還要大。另,隨著顯示器對解析度的要求越來越高,相鄰的發光元件的間距亦越來越小,同樣由於電路板最小鑽孔尺寸和最小鑽孔公差的限制,習知的電路板中,相鄰的貫孔幾乎要短路在一起。亦就是說,當LED的間距小於150μm時,鑽孔製程良率將大幅下降。是故,習知的利用micro LED或mini LED作為發光元件的顯示器的生產良率有待提升。FIG1 is a schematic plan view of a known circuit board. As shown in FIG1 , the circuit board includes a plurality of N-pole pads 2 and P-pole pads 3. The arrangement of the plurality of N-pole pads 2 and P-pole pads 3 is a row of N-pole pads 2 and a row of P-pole pads 3 that are alternately and periodically arranged. An N-pole pad 2 and an adjacent P-pole pad 3 form a group, which are used to electrically connect the N-pole and P-pole of an LED, respectively. The circuit board also includes two layers of wiring, one layer of wiring is the wiring 4, which is used to electrically connect the P electrodes of all LEDs corresponding to the wiring 4, and the other layer of wiring is the row wiring (not shown), which is used to electrically connect the N electrodes of all LEDs corresponding to the row wiring, wherein the two layers of wiring connect the wiring of the lower layer to the pad of the wiring of the upper layer through the through hole 5. However, as the display has higher and higher requirements for resolution, the size of LEDs is getting smaller and smaller. Due to the limitation of the minimum diameter of the drilling hole size of the circuit board of 50μm and the minimum drilling hole tolerance of 50μm on one side, in the known circuit board, the area of each through hole plus the tolerance is even larger than the pad of the light-emitting element. In addition, as the resolution requirements of displays become higher and higher, the spacing between adjacent light-emitting elements is also getting smaller and smaller. Similarly, due to the limitations of the minimum drilling hole size and the minimum drilling hole tolerance of the circuit board, adjacent through holes in the conventional circuit board are almost short-circuited together. In other words, when the pitch of LEDs is less than 150μm, the drilling process yield will drop significantly. Therefore, the production yield of conventional displays using micro LEDs or mini LEDs as light-emitting elements needs to be improved.

下面將結合本申請實施例中的附圖,對本申請實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例僅是本申請一部分實施例,而不是全部的實施例。The following will clearly and completely describe the technical solutions in the embodiments of this application in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments.

圖2為本申請一實施例的LED晶圓的平面示意圖。如圖2所示,LED晶圓10a包括圓形的基材11。LED晶圓10a的部分區域定義為一個LED晶塊10。LED晶塊10包括基材11、複數LED12、複數N電極131、複數P電極132以及複數N極走線141。複數LED12間隔位於基材11上,並沿第一方向D1排佈為複數列,沿與第一方向D1交叉的第二方向D2排佈為複數行。本申請實施例中,第一方向D1與第二方向D2垂直。複數P電極132間隔排佈為複數行複數列,複數N電極131間隔排佈為複數行複數列。每個LED12對應一個P電極132和一個N電極131。複數P電極132和複數N電極131為一行P電極132和一行N電極131交替週期性重複排佈。每條N極走線141沿第一方向D1延伸並且與一個對應行中所有的LED12的N電極131直接接觸並電性連接。複數N極走線141沿第二方向D2間隔設置。FIG2 is a schematic plan view of an LED wafer of an embodiment of the present application. As shown in FIG2, an LED wafer 10a includes a circular substrate 11. A partial area of the LED wafer 10a is defined as an LED die 10. The LED die 10 includes a substrate 11, a plurality of LEDs 12, a plurality of N electrodes 131, a plurality of P electrodes 132, and a plurality of N electrode traces 141. The plurality of LEDs 12 are spaced apart on the substrate 11, and are arranged in a plurality of columns along a first direction D1, and are arranged in a plurality of rows along a second direction D2 intersecting the first direction D1. In the embodiment of the present application, the first direction D1 is perpendicular to the second direction D2. The plurality of P electrodes 132 are spaced apart and arranged in a plurality of rows and columns, and the plurality of N electrodes 131 are spaced apart and arranged in a plurality of rows and columns. Each LED 12 corresponds to a P electrode 132 and an N electrode 131. The plurality of P electrodes 132 and the plurality of N electrodes 131 are arranged alternately and periodically in a row of P electrodes 132 and a row of N electrodes 131. Each N electrode wiring 141 extends along the first direction D1 and directly contacts and electrically connects with the N electrodes 131 of all LEDs 12 in a corresponding row. The plurality of N electrode wirings 141 are arranged at intervals along the second direction D2.

需要說的是,本申請實施例中,LED晶圓指晶圓(Wafer)上生長有LED疊層的整體結構。晶圓的直徑尺寸例如為6英寸、8英寸、12英寸甚至更大規格如,14英寸、15英寸、16英寸、20英寸以上。而LED晶塊可以是指LED晶圓上的部分區域(還未與LED晶圓10a的其他部分切割),亦可以是指已經從LED晶圓上切割下來的分離的區塊。另,LED晶塊的形狀及大小可依據待形成的顯示器的顯示區的形狀及大小劃分,其可為任意形狀。圖2所示的實施例中,LED晶塊10為矩形。其他實施例中,LED晶塊10的形狀可根據待形成的顯示器的顯示區的形狀及大小劃分,例如若顯示區為圓形,則LED晶塊10可為圓形,或者顯示區為異形,則LED晶塊10可為異形。It should be noted that in the embodiment of the present application, the LED wafer refers to the overall structure on which LED stacks are grown on a wafer. The diameter size of the wafer is, for example, 6 inches, 8 inches, 12 inches, or even larger specifications such as 14 inches, 15 inches, 16 inches, 20 inches or more. The LED block can refer to a partial area on the LED wafer (not yet cut from other parts of the LED wafer 10a), or it can refer to a separated block that has been cut from the LED wafer. In addition, the shape and size of the LED block can be divided according to the shape and size of the display area of the display to be formed, and it can be any shape. In the embodiment shown in Figure 2, the LED block 10 is rectangular. In other embodiments, the shape of the LED chip 10 can be divided according to the shape and size of the display area of the display to be formed. For example, if the display area is circular, the LED chip 10 can be circular, or if the display area is irregular, the LED chip 10 can be irregular.

一些實施例中,LED12為micro LED,micro LED指晶粒尺寸小於100微米的LED12。另一些實施例中,LED12為mini LED。mini LED又稱次毫米發光二極體,其尺寸介於傳統的LED和micro LED之間,習知意指晶粒尺寸大致在100微米到200微米的LED。In some embodiments, LED 12 is a micro LED, which refers to an LED 12 with a grain size of less than 100 microns. In other embodiments, LED 12 is a mini LED. Mini LED is also called a sub-millimeter light-emitting diode, which has a size between a traditional LED and a micro LED, and generally refers to an LED with a grain size of approximately 100 to 200 microns.

圖3為圖2沿線III-III的剖面示意圖。圖4為圖2沿線IV-IV的剖面示意圖。請結合參閱圖2至圖4,沿第二方向D2上,相鄰的兩個LED12間隔設置。每個LED12包括N型半導體層121、發光層122及P型半導體層123。N型半導體層121位於基材11的表面。發光層122位於N型半導體層121和P型半導體層123之間。P電極132位於LED12的P型半導體層123遠離基材11的一側。N電極131位於一個對應的LED12的N型半導體層121遠離基材11的一側。N極走線141至少部分位於N型半導體層121和N電極131之間,並分別與N型半導體層121和N電極131直接接觸並電性連接。其中,N極走線141可藉由光刻微影製程形成。N電極131包括N電極金屬層1311和N電極焊料層1312。沿第二方向D2上,N電極金屬層1311完全覆蓋對應的N極走線141,並與對應的N型半導體層121直接接觸。N電極焊料層1312覆蓋N電極金屬層1311的遠離基材11的表面。P電極132包括P電極金屬層1321和P電極焊料層1322。沿第二方向D2上,P電極金屬層1321與對應的P型半導體層123直接接觸並部分覆蓋對應的P型半導體層123。P電極焊料層1322覆蓋P電極金屬層1321的遠離基材11的表面。N電極焊料層1312和P電極焊料層1322的材料例如為錫。當LED晶塊10與電路板接合時,可在基材11背離LED12的一側用雷射照射,以使N電極焊料層1312和P電極焊料層1322分別熔化並與電路板上對應的N極焊盤和P極焊盤結合。FIG3 is a schematic cross-sectional view along line III-III of FIG2 . FIG4 is a schematic cross-sectional view along line IV-IV of FIG2 . Please refer to FIG2 to FIG4 in combination. Two adjacent LEDs 12 are arranged at intervals along the second direction D2. Each LED 12 includes an N-type semiconductor layer 121, a light-emitting layer 122, and a P-type semiconductor layer 123. The N-type semiconductor layer 121 is located on the surface of the substrate 11. The light-emitting layer 122 is located between the N-type semiconductor layer 121 and the P-type semiconductor layer 123. The P-electrode 132 is located on a side of the P-type semiconductor layer 123 of the LED 12 away from the substrate 11. The N-electrode 131 is located on a side of the N-type semiconductor layer 121 of a corresponding LED 12 away from the substrate 11. The N-pole trace 141 is at least partially located between the N-type semiconductor layer 121 and the N-electrode 131, and is directly in contact with and electrically connected to the N-type semiconductor layer 121 and the N-electrode 131, respectively. The N-pole trace 141 can be formed by a photolithography process. The N-electrode 131 includes an N-electrode metal layer 1311 and an N-electrode solder layer 1312. Along the second direction D2, the N-electrode metal layer 1311 completely covers the corresponding N-pole trace 141, and is in direct contact with the corresponding N-type semiconductor layer 121. The N-electrode solder layer 1312 covers the surface of the N-electrode metal layer 1311 away from the substrate 11. The P-electrode 132 includes a P-electrode metal layer 1321 and a P-electrode solder layer 1322. Along the second direction D2, the P-electrode metal layer 1321 directly contacts the corresponding P-type semiconductor layer 123 and partially covers the corresponding P-type semiconductor layer 123. The P-electrode solder layer 1322 covers the surface of the P-electrode metal layer 1321 away from the substrate 11. The material of the N-electrode solder layer 1312 and the P-electrode solder layer 1322 is, for example, tin. When the LED chip 10 is bonded to the circuit board, the side of the substrate 11 facing away from the LED 12 can be irradiated with laser so that the N-electrode solder layer 1312 and the P-electrode solder layer 1322 are melted and bonded to the corresponding N-electrode pad and P-electrode pad on the circuit board.

N型半導體層121的材質例如為N型氮化鎵,P型半導體層123的材質例如為P型氮化鎵,發光層122的材料例如為多量子阱層,但不以此為限。The material of the N-type semiconductor layer 121 is, for example, N-type gallium nitride, the material of the P-type semiconductor layer 123 is, for example, P-type gallium nitride, and the material of the light-emitting layer 122 is, for example, a multi-quantum well layer, but not limited thereto.

LED晶塊10還包括位於相鄰的LED12之間的擋牆15,以防止相鄰的LED12之間發生光干擾。The LED die 10 further includes a barrier 15 located between adjacent LEDs 12 to prevent light interference between adjacent LEDs 12 .

具體地,擋牆15位於基材11的表面上,且與一個LED12的N型半導體層121和N電極131直接接觸,並與另一個LED12的N型半導體層121、發光層122及P型半導體層123直接接觸。擋牆15的材料為不透光的材質,例如黑矩陣。擋牆15可藉由光刻微影製程形成。Specifically, the baffle 15 is located on the surface of the substrate 11 and directly contacts the N-type semiconductor layer 121 and the N-electrode 131 of one LED 12, and directly contacts the N-type semiconductor layer 121, the light-emitting layer 122, and the P-type semiconductor layer 123 of another LED 12. The material of the baffle 15 is a light-proof material, such as a black matrix. The baffle 15 can be formed by a photolithography process.

沿第一方向D1上,N極走線141覆蓋一個對應行中所有的LED12的N型半導體層121,並與對應行中所有的LED12的N電極131直接接觸並電性連接。其中,N極走線141位於相鄰兩個LED12之間的部分與基材11的表面直接接觸。每個LED12的N電極131位於對應的N極走線141遠離基材11的表面。Along the first direction D1, the N-type semiconductor layer 121 of all LEDs 12 in a corresponding row is covered by the N-type trace 141, and is directly in contact with and electrically connected to the N-electrodes 131 of all LEDs 12 in the corresponding row. The portion of the N-electrode trace 141 between two adjacent LEDs 12 is in direct contact with the surface of the substrate 11. The N-electrode 131 of each LED 12 is located away from the surface of the substrate 11 at the corresponding N-electrode trace 141.

本申請實施例中,藉由一條N極走線141將一行中所有的LED12的N電極131電性連接,使得LED晶圓10a在電測時,無需對應每個LED12的N電極131製作頂針以供電電測,而是只需對每行LED12中其中一個LED12對應的N電極131製作頂針進行供電電測即可。是故,該LED晶圓10a的電測可減少製作頂針的治具成本,並且減少頂針不良的誤判率。In the embodiment of the present application, the N electrodes 131 of all LEDs 12 in a row are electrically connected by an N electrode wiring 141, so that when the LED wafer 10a is electrically tested, it is not necessary to make a pin corresponding to the N electrode 131 of each LED 12 for power supply and testing, but only the N electrode 131 corresponding to one LED 12 in each row of LEDs 12 needs to be made to supply power and test. Therefore, the electrical testing of the LED wafer 10a can reduce the cost of the fixture for making the pin and reduce the error rate of bad pins.

另,本申請實施例中,基材11為透光的或者說透明的,其材料例如為藍寶石。藉由將基材11設置為透光的,使得LED晶塊10接合至電路板上後,基材11無需被移除,而保留在顯示器中被覆用為透明的蓋板使用。藉此,在顯示器製備過程中,減少了將基材11與LED12分離的步驟,簡化製程。而且由於基材11可作為透明的蓋板(cover lens)的功能使用,是故無需再額外設置蓋板,節省了貼合製程並降低蓋板的成本。In addition, in the embodiment of the present application, the substrate 11 is light-transmitting or transparent, and its material is, for example, sapphire. By setting the substrate 11 to be light-transmitting, after the LED crystal block 10 is bonded to the circuit board, the substrate 11 does not need to be removed, but is retained in the display and used as a transparent cover. In this way, in the display manufacturing process, the step of separating the substrate 11 from the LED 12 is reduced, simplifying the process. Moreover, since the substrate 11 can be used as a transparent cover lens, there is no need to set up an additional cover, saving the bonding process and reducing the cost of the cover.

圖5為本申請一實施例的電路板的平面示意圖。該電路板用於與上述的LED晶塊接合,以形成顯示器。Fig. 5 is a schematic plan view of a circuit board according to an embodiment of the present application. The circuit board is used to be bonded with the above-mentioned LED die to form a display.

如圖5所示,電路板20包括絕緣的基底21、複數P極走線241、複數P極焊盤232和複數N極焊盤231。具體地,複數P極走線241沿第一方向D1間隔設置。複數P極焊盤232間隔位於基底21上,並沿第一方向D1排佈為複數列,沿第二方向D2排佈為複數行。每一行中相鄰的兩個P極焊盤232絕緣且隔離。每一列的所有的P極焊盤232藉由一條對應的P極走線241電性連接。複數N極焊盤231間隔位於基底21上,並沿第二方向D2排佈為複數行。複數P極焊盤232和複數N極焊盤231為一行P極焊盤232和一行N極焊盤231交替週期性重複排佈。As shown in FIG5 , the circuit board 20 includes an insulated substrate 21, a plurality of P-pole traces 241, a plurality of P-pole pads 232, and a plurality of N-pole pads 231. Specifically, the plurality of P-pole traces 241 are arranged at intervals along the first direction D1. The plurality of P-pole pads 232 are located at intervals on the substrate 21, and are arranged in a plurality of rows along the first direction D1, and are arranged in a plurality of rows along the second direction D2. The two adjacent P-pole pads 232 in each row are insulated and isolated. All the P-pole pads 232 in each row are electrically connected by a corresponding P-pole trace 241. The plurality of N-pole pads 231 are located at intervals on the substrate 21, and are arranged in a plurality of rows along the second direction D2. The plurality of P-pole pads 232 and the plurality of N-pole pads 231 are arranged alternately and periodically in a row of P-pole pads 232 and a row of N-pole pads 231 .

圖5所示的實施例中,每一行有兩個N極焊盤231。每個N極焊盤231或是在第一列的兩個P極焊盤232之間,或是在最後一列的兩個P極焊盤232之間。每個P極焊盤232用於與一個對應的LED12的P電極132電性連接,每個N極焊盤231用於與一個對應的LED12的N電極131電性連接。其中虛線框中的一個P極焊盤232和一個N極焊盤231構成一組,以分別電性連接同一個LED12的P電極132和N電極131。是故,電路板20上,針對待接收的LED12,第一列和最後一列分別有N極焊盤231和P極焊盤232,而位於第一列和最後一列的中間列只設置有P極焊盤232,而未設置有N極焊盤231。藉此,可減少電路板20上的焊盤的數量,減少焊接時間,以及減少焊接產生的不良率。In the embodiment shown in FIG. 5 , each row has two N-pole pads 231. Each N-pole pad 231 is either between two P-pole pads 232 in the first column or between two P-pole pads 232 in the last column. Each P-pole pad 232 is used to be electrically connected to a corresponding P-electrode 132 of an LED 12, and each N-pole pad 231 is used to be electrically connected to a corresponding N-electrode 131 of an LED 12. A P-pole pad 232 and an N-pole pad 231 in a dotted frame form a group to electrically connect the P-electrode 132 and the N-electrode 131 of the same LED 12, respectively. Therefore, on the circuit board 20, for the LEDs 12 to be received, the first and last columns have N-pole pads 231 and P-pole pads 232, respectively, and the middle column between the first and last columns has only P-pole pads 232, but no N-pole pads 231. In this way, the number of pads on the circuit board 20 can be reduced, the welding time can be reduced, and the defect rate caused by welding can be reduced.

其他實施例中,每一行中N極焊盤231的數量可多於兩個,例如在第一列和最後一列分別設置有一個N極焊盤231,在中間列中,對應P極焊盤232之間的P極走線241上亦可設置N極焊盤231(P極走線241和N極焊盤231之間可藉由設置防焊層25絕緣),藉此,可增加電路板20上N極焊盤231與一行LED12的電連接的位置,避免當首尾的N極焊盤231和對應的LED12的N電極131均電性連接不良的情況下,導致電路板20與該行LED12的電連接失效的問題。In other embodiments, the number of N-pole pads 231 in each row may be more than two. For example, an N-pole pad 231 is provided in the first column and the last column respectively. In the middle column, an N-pole pad 231 may also be provided on the P-pole trace 241 between the corresponding P-pole pads 232 (the P-pole trace 241 and the N-pole pad 231 may be insulated by providing a solder mask 25). In this way, the positions for the electrical connection between the N-pole pad 231 on the circuit board 20 and a row of LEDs 12 may be increased, thereby avoiding the problem of failure of the electrical connection between the circuit board 20 and the row of LEDs 12 when the electrical connection between the first and last N-pole pads 231 and the N-pole 131 of the corresponding LED 12 is poor.

複數P極焊盤232和複數N極焊盤231共同構成的複數行焊盤中,位於第一行行首的焊盤、位於第一行行尾的焊盤、位於最後一行行首的焊盤以及位於最後一行行尾的焊盤中(或者說,位於電路板20的角落處的焊盤),至少兩個焊盤包括本體部以及分別自第一方向D1和第二方向D2延伸超出本體部的第一凸出部和第二凸出部。而位於非角落位置處的焊盤,只包括本體部。本體部大致呈矩形,但不以此為限。Among the plurality of rows of pads formed by the plurality of P-pole pads 232 and the plurality of N-pole pads 231, at least two pads at the beginning of the first row, at the end of the first row, at the beginning of the last row, and at the end of the last row (or pads at the corners of the circuit board 20) include a main body and a first protrusion and a second protrusion extending from the main body in the first direction D1 and the second direction D2, respectively. The pads at non-corner positions include only the main body. The main body is generally rectangular, but not limited thereto.

藉由電路板20上的角落處的焊盤設置凸出部,可在LED晶塊10轉移的步驟中作為LED12接合(bonding)的對位標記使用。藉此,無需再在電路板20上額外製作對位標記,節省了電路板20上的空間,利於顯示器的窄邊框的設計。By providing protrusions on the pads at the corners of the circuit board 20, they can be used as alignment marks for the bonding of the LED 12 during the transfer of the LED die 10. In this way, there is no need to make additional alignment marks on the circuit board 20, which saves space on the circuit board 20 and facilitates the design of a narrow frame for the display.

具體地,圖5所示的實施例中,第一行焊盤為N極焊盤231,最後一行焊盤為P極焊盤232。位於第一行行首的N極焊盤231、位於第一行行尾的N極焊盤231均分別包括用於與LED12的N電極131電性連接的本體部231a,以及分別自本體部231a沿第一方向D1延伸的第一凸出部231b和自本體部231a沿第二方向D2延伸的第二凸出部231c。其中,位於第一行行首的N極焊盤231、位於第一行行尾的N極焊盤231的第一凸出部231b分別自第一方向的負向和正向延伸。Specifically, in the embodiment shown in FIG. 5 , the first row of pads is an N-pole pad 231, and the last row of pads is a P-pole pad 232. The N-pole pad 231 at the beginning of the first row and the N-pole pad 231 at the end of the first row each include a body portion 231a for electrically connecting to the N-electrode 131 of the LED 12, and a first protrusion 231b extending from the body portion 231a along the first direction D1 and a second protrusion 231c extending from the body portion 231a along the second direction D2. The first protrusion 231b of the N-pole pad 231 at the beginning of the first row and the N-pole pad 231 at the end of the first row extend from the negative direction and the positive direction of the first direction, respectively.

位於最後一行行首的P極焊盤232以及位於最後一行行尾的P極焊盤232均分別包括用於與LED12的P電極231電性連接的本體部232a,以及分別自本體部232a沿第一方向D1延伸的第一凸出部232b和自本體部232a沿第二方向D2延伸的第二凸出部232c。其中,位於最後一行行首的P極焊盤232、位於最後一行行尾的第一凸出部232b分別自第一方向的負向和正向延伸。The P-pole pad 232 at the beginning of the last row and the P-pole pad 232 at the end of the last row each include a body portion 232a for electrically connecting to the P-electrode 231 of the LED 12, and a first protrusion 232b extending from the body portion 232a along the first direction D1 and a second protrusion 232c extending from the body portion 232a along the second direction D2. The P-pole pad 232 at the beginning of the last row and the first protrusion 232b at the end of the last row extend from the negative direction and the positive direction of the first direction, respectively.

當LED晶塊10與電路板20接合時,僅需要將LED晶塊10上對應的LED12的兩個相鄰邊緣分別對齊本體部與第一凸出部的邊界、本體部與第二凸出部的邊界;或者說,將LED晶塊10上對應的LED12的角落的頂點對齊本體部、第一凸出部和第二凸出部三者交匯的點。 一些實施例中,第一凸出部231b和第一凸出部232b延伸超出第一方向D1上的長度為40μm以上,第二凸出部231c和第二凸出部232c延伸超出第二方向D2上的長度為40μm以上(如40μm、50μm等)。其中,當第一凸出部231b和/或第二凸出部231c延伸超出本體部231a的長度過長時,以及第一凸出部232b和/或第二凸出部232c延伸超出本體部232a過長時,會佔用電路板20空間較大;而當第一凸出部231b和/或第二凸出部231c延伸超出本體部231a的長度過短時,以及第一凸出部232b和/或第二凸出部232c延伸超出本體部232a過短時,會影響對位精度。 When the LED chip 10 is bonded to the circuit board 20, it is only necessary to align the two adjacent edges of the corresponding LED 12 on the LED chip 10 with the boundaries of the body and the first protrusion, and the boundaries of the body and the second protrusion respectively; or, to align the vertices of the corners of the corresponding LED 12 on the LED chip 10 with the intersection of the body, the first protrusion, and the second protrusion. In some embodiments, the first protrusion 231b and the first protrusion 232b extend beyond the first direction D1 by more than 40μm, and the second protrusion 231c and the second protrusion 232c extend beyond the second direction D2 by more than 40μm (such as 40μm, 50μm, etc.). When the length of the first protrusion 231b and/or the second protrusion 231c extending beyond the main body 231a is too long, and when the first protrusion 232b and/or the second protrusion 232c extending beyond the main body 232a is too long, it will occupy a large space of the circuit board 20; and when the length of the first protrusion 231b and/or the second protrusion 231c extending beyond the main body 231a is too short, and when the first protrusion 232b and/or the second protrusion 232c extending beyond the main body 232a is too short, it will affect the alignment accuracy.

相較於習知的行走線層及列走線層以分別連接LED的N極焊盤和P極焊盤,且設有大量且密集貫孔的雙層走線設計,本申請實施例中,N極焊盤231、P極焊盤232及P極走線241在同一線路層,且同列的用於連接LED12的P極焊盤232用P極走線241連接在一起,無需設置大量且密集的貫孔,避免了鑽孔製程造成的電路板及顯示器的良率的下降。尤其是,習知的電路板針對LED間距越來越小的情況,貫孔的良率越差,甚至無法製作,而本申請實施例的電路板,由於其為單層LED走線設置,無需貫孔,利於良率的提升,尤其是利於高解析度利用mini LED或micro LED作為發光元件的顯示器的良率及產能的提升。另,由於無需貫孔,是故本申請實施例的電路板20甚至還可以使用不容易貫孔的材料作為基底21,如玻璃。Compared to the known double-layer routing design in which the N-pole pad and the P-pole pad of the LED are connected respectively by the routing layer and the column routing layer, and a large number of dense through holes are provided, in the embodiment of the present application, the N-pole pad 231, the P-pole pad 232 and the P-pole routing 241 are in the same wiring layer, and the P-pole pad 232 in the same column for connecting the LED 12 is connected together by the P-pole routing 241, and there is no need to provide a large number of dense through holes, thereby avoiding the decrease in the yield of the circuit board and the display caused by the drilling process. In particular, the conventional circuit board has a lower yield rate of through holes as the LED spacing becomes smaller and smaller, and even cannot be manufactured. However, the circuit board of the embodiment of the present application, because it is a single-layer LED wiring arrangement, does not need through holes, which is conducive to improving the yield rate, especially the yield rate and production capacity of high-resolution displays using mini LEDs or micro LEDs as light-emitting elements. In addition, because there is no need for through holes, the circuit board 20 of the embodiment of the present application can even use materials that are not easy to be through holes as the substrate 21, such as glass.

可理解地,電路板20還包括位於基底21上的驅動晶片22(示出在圖7中)和防焊層25(示出在圖7中)。驅動晶片22電性連接複數P極走線241和複數N極焊盤231。防焊層25至少覆蓋每條P極走線241位於相鄰的兩個P極焊盤232之間的部分。當LED晶塊10接合至電路板20上後,電路板20上N極焊盤231電性連接對應的LED12的N電極,P極焊盤232電性連接對應的LED12的P電極132,防焊層25位於N電極131和P極走線241之間,以使N電極131和P極走線241絕緣且隔離。驅動晶片22藉由一條P極走線241、一列P極焊盤232與一列LED12的P電極132電性連接,並以此向對應列的LED12的P電極132施加驅動電壓。驅動晶片22藉由一行N極焊盤231、一條N極走線141與一行LED12的N電極131電性連接,並以此使對應行的LED12的N電極131保持共同的陰極電壓(如接地)。當LED12的P電極132和N電極131具有電壓差時,LED12發光。It is understandable that the circuit board 20 further includes a driver chip 22 (shown in FIG. 7 ) and a solder mask 25 (shown in FIG. 7 ) located on the substrate 21. The driver chip 22 is electrically connected to a plurality of P-pole traces 241 and a plurality of N-pole pads 231. The solder mask 25 at least covers a portion of each P-pole trace 241 between two adjacent P-pole pads 232. When the LED chip 10 is bonded to the circuit board 20, the N-pole pad 231 on the circuit board 20 is electrically connected to the N-pole of the corresponding LED 12, and the P-pole pad 232 is electrically connected to the P-pole 132 of the corresponding LED 12. The solder mask 25 is located between the N-pole 131 and the P-pole trace 241 to insulate and isolate the N-pole 131 and the P-pole trace 241. The driver chip 22 is electrically connected to the P-pole 132 of a row of LEDs 12 via a P-pole trace 241, a row of P-pole pads 232, and thereby applies a driving voltage to the P-pole 132 of the corresponding row of LEDs 12. The driver chip 22 is electrically connected to the N electrode 131 of a row of LEDs 12 via a row of N electrode pads 231 and an N electrode trace 141, so that the N electrodes 131 of the corresponding row of LEDs 12 maintain a common cathode voltage (such as grounding). When the P electrode 132 and the N electrode 131 of the LED 12 have a voltage difference, the LED 12 emits light.

本申請實施例還提供一種顯示器的製備方法。該製備方法包括以下步驟S1及步驟S2。The present application embodiment also provides a method for preparing a display, which includes the following steps S1 and S2.

步驟S1:提供電路板,並切割LED晶圓,得到LED晶塊。Step S1: Provide a circuit board and cut the LED wafer to obtain LED chips.

具體地,步驟S1中,電路板例如為上述圖5所示的電路板20。LED晶圓例如為上述圖2所示的LED12晶圓。步驟S1中,可根據顯示器100的顯示區的形狀及大小設計電路板20上焊盤及線路以及切割出對應形狀及大小的LED晶塊10。Specifically, in step S1, the circuit board is, for example, the circuit board 20 shown in FIG. 5. The LED wafer is, for example, the LED 12 wafer shown in FIG. 2. In step S1, the pads and lines on the circuit board 20 can be designed according to the shape and size of the display area of the display 100, and the LED die 10 of the corresponding shape and size can be cut out.

請結合參閱圖2和圖5,LED晶塊10上的一行P電極132對應電路板20上的一行P極焊盤232,且LED12晶塊上的P電極132的數量和電路板20上P極焊盤232的數量相同,排佈位置一一對應。LED晶塊10上的一行N電極131對應電路板20上的一行N極焊盤231,且LED12晶塊上的N電極131的數量大於電路板20上N極焊盤231的數量,在位置排佈上,LED晶塊10上第一列和最後一列的N電極131與電路板20上第一列和最後一列的N極焊盤231一一對應。另,LED晶塊10上對應中間列的N電極131在電路板20上未設置有N極焊盤231,而是對應P極走線241的位置(需注意的是,該位置處的P極走線241上設置有防焊層25,防焊層25的材料例如為防焊油墨,以使LED晶塊10轉移到電路板20上後,N電極131和P極走線241絕緣且隔離)。Please refer to FIG. 2 and FIG. 5 , a row of P electrodes 132 on the LED chip 10 corresponds to a row of P electrode pads 232 on the circuit board 20, and the number of P electrodes 132 on the LED12 chip is the same as the number of P electrode pads 232 on the circuit board 20, and the arrangement positions correspond one to one. A row of N electrodes 131 on the LED chip 10 corresponds to a row of N electrode pads 231 on the circuit board 20, and the number of N electrodes 131 on the LED12 chip is greater than the number of N electrode pads 231 on the circuit board 20. In terms of position arrangement, the first and last rows of N electrodes 131 on the LED chip 10 correspond one to one with the first and last rows of N electrode pads 231 on the circuit board 20. In addition, the N-electrode 131 corresponding to the middle column on the LED chip 10 is not provided with an N-electrode pad 231 on the circuit board 20, but is located at a position corresponding to the P-electrode trace 241 (it should be noted that a solder mask 25 is provided on the P-electrode trace 241 at this position, and the material of the solder mask 25 is, for example, solder mask ink, so that after the LED chip 10 is transferred to the circuit board 20, the N-electrode 131 and the P-electrode trace 241 are insulated and isolated).

步驟S2:將LED晶塊接合至電路板上。Step S2: Bond the LED chip to the circuit board.

具體地,請結合參閱圖2、圖5和圖6,以最左上角處的焊盤為例,將LED晶塊10轉移至電路板20上使,使LED晶塊10上的最左上角處的LED12的左側的長邊與第一凸出部231b和本體部231a的邊界對齊,LED晶塊10上的最左上角處的LED12的上側的短邊與第二凸出部231c和本體部231a的邊界對齊,將LED晶塊10轉移至電路板20上。最左下角處的焊盤、最右下角處的焊盤、最右上角處的焊盤為對位標記進行轉移與此類似。Specifically, please refer to FIG. 2, FIG. 5 and FIG. 6, and take the pad at the upper left corner as an example, and transfer the LED chip 10 to the circuit board 20 so that the long side of the left side of the LED 12 at the upper left corner of the LED chip 10 is aligned with the boundary between the first protrusion 231b and the body 231a, and the short side of the upper side of the LED 12 at the upper left corner of the LED chip 10 is aligned with the boundary between the second protrusion 231c and the body 231a, and then transfer the LED chip 10 to the circuit board 20. The pad at the lower left corner, the pad at the lower right corner, and the pad at the upper right corner are transferred similarly as the alignment mark.

將LED晶塊10轉移至電路板20上後,在LED晶塊10遠離電路板20的一側利用雷射照射,使N電極焊料層1312和P電極焊料層1322熔化,進而複數P極焊盤232與複數P電極132一一對應電性連接,每個N極焊盤231電性連接一個對應的N電極131。驅動晶片22藉由一條P極走線241、一列P極焊盤232與一列LED12的P電極132電性連接,驅動晶片22藉由一行N極焊盤231、一條N極走線141與一行LED12的N電極131電性連接。藉此,得到顯示器100。After the LED chip 10 is transferred to the circuit board 20 , a laser is used to irradiate the side of the LED chip 10 away from the circuit board 20 to melt the N-electrode solder layer 1312 and the P-electrode solder layer 1322 , so that the multiple P-electrode pads 232 are electrically connected to the multiple P-electrodes 132 one by one, and each N-electrode pad 231 is electrically connected to a corresponding N-electrode 131 . The driver chip 22 is electrically connected to the P electrode 132 of a row of LEDs 12 via a P electrode trace 241 and a row of P electrode pads 232, and the driver chip 22 is electrically connected to the N electrode 131 of a row of LEDs 12 via a row of N electrode pads 231 and a N electrode trace 141. Thus, the display 100 is obtained.

需要說明的是,本申請實施例中,LED晶塊10的基材11為透光的或者說透明的,LED12晶塊與電路板20接合後,基材11無需移除,基材11可作為顯示器100的蓋板使用,藉此,節省了蓋板貼合成本及蓋板的材料成本。而且,該顯示器的製備方法,將LED晶塊10整體接合至電路板20上,可實現一次轉移大量的LED,相較於將大量的LED一一對位並轉移至電路板上的方式,減少了對位元次數,簡化製程,提升了巨量轉移的良率及產能。It should be noted that in the embodiment of the present application, the substrate 11 of the LED crystal block 10 is light-transmissive or transparent. After the LED 12 crystal block is bonded to the circuit board 20, the substrate 11 does not need to be removed. The substrate 11 can be used as a cover plate of the display 100, thereby saving the cover plate bonding cost and the cover plate material cost. In addition, the manufacturing method of the display, the LED crystal block 10 is integrally bonded to the circuit board 20, which can realize a large number of LEDs to be transferred at one time. Compared with the method of aligning a large number of LEDs one by one and transferring them to the circuit board, the number of alignment times is reduced, the process is simplified, and the yield and production capacity of mass transfer are improved.

圖7為圖6沿線VII-VII的剖面示意圖。如圖6和圖7所示,顯示器100包括電路板20以及與電路板20結合的LED晶塊10。LED晶塊10包括透光的基材11、間隔位於基材11上的複數LED12、複數P電極132、複數N電極131以及複數N極走線141。複數LED12沿第一方向D1排佈為複數列,沿與第一方向D1交叉的第二方向D2排佈為複數行,每個LED12包括N型半導體層121、發光層122及P型半導體層123,其中N型半導體層121位於基材11的表面,發光層122位於N型半導體層121和P型半導體層123之間。每個P電極132位於一個對應的LED12的P型半導體層123遠離基材11的一側。每個N電極131位於一個對應的LED12的N型半導體層121遠離基材11的一側,其中複數P電極132和複數N電極131為一行P電極132和一行N電極131交替週期性重複排佈。每個N極走線141覆蓋一個對應行中所有的LED12的N型半導體層121,並與對應行中所有的LED12的N電極131直接接觸並電性連接。一行P電極132對應一行P極焊盤232,複數P極焊盤232與複數P電極132一一對應電性連接,一行N電極131對應一行N極焊盤231,複數N極焊盤231的數量小於等於複數N電極131的數量,每個N極焊盤231電性連接一個對應的N電極131,驅動晶片22藉由一條P極走線241、一列P極焊盤232與一列LED12的P電極132電性連接,驅動晶片22藉由一行N極焊盤231、一條N極走線141與一行LED12的N電極131電性連接。第一凸出部231b、第一凸出部232b、第二凸出部231c、第二凸出部232c均延伸超出基材11。FIG7 is a schematic cross-sectional view taken along line VII-VII of FIG6. As shown in FIG6 and FIG7, the display 100 includes a circuit board 20 and an LED chip 10 combined with the circuit board 20. The LED chip 10 includes a light-transmitting substrate 11, a plurality of LEDs 12 spaced apart on the substrate 11, a plurality of P electrodes 132, a plurality of N electrodes 131, and a plurality of N electrode traces 141. The plurality of LEDs 12 are arranged in a plurality of rows along a first direction D1 and in a plurality of lines along a second direction D2 intersecting the first direction D1. Each LED 12 includes an N-type semiconductor layer 121, a light-emitting layer 122, and a P-type semiconductor layer 123, wherein the N-type semiconductor layer 121 is located on the surface of the substrate 11, and the light-emitting layer 122 is located between the N-type semiconductor layer 121 and the P-type semiconductor layer 123. Each P electrode 132 is located on a side of the P-type semiconductor layer 123 of a corresponding LED 12 away from the substrate 11. Each N-electrode 131 is located on a side of the N-type semiconductor layer 121 of a corresponding LED 12 away from the substrate 11, wherein the plurality of P-electrodes 132 and the plurality of N-electrodes 131 are arranged alternately and periodically in a row of P-electrodes 132 and a row of N-electrodes 131. Each N-electrode trace 141 covers the N-type semiconductor layer 121 of all LEDs 12 in a corresponding row, and is in direct contact with and electrically connected to the N-electrodes 131 of all LEDs 12 in the corresponding row. A row of P electrodes 132 corresponds to a row of P electrode pads 232, and the plurality of P electrode pads 232 are electrically connected to the plurality of P electrodes 132 one by one. A row of N electrodes 131 corresponds to a row of N electrode pads 231, and the number of the plurality of N electrode pads 231 is less than or equal to the number of the plurality of N electrodes 131. Each N electrode pad 231 is electrically connected to The driver chip 22 is electrically connected to a corresponding N electrode 131 through a P electrode trace 241 and a P electrode pad 232 and a row of LEDs 12 through a row of N electrode pads 231 and a N electrode trace 141. The first protrusion 231b, the first protrusion 232b, the second protrusion 231c, and the second protrusion 232c all extend beyond the substrate 11.

本申請實施例的顯示器,LED的N電極藉由LED晶塊上的N極走線電性連接,LED的P電極藉由電路板上的P極走線電性連接,由於N極走線設置在LED晶塊上,而非是電路板上,使得電路板上為單層走線,且無需設置貫孔,避免了鑽孔製程造成的電路板及顯示器的良率的下降。而且,由於電路板上無需貫孔,利於電路板良率的提升,尤其利於高解析度利用mini LED或micro LED作為發光元件的顯示器的良率及產能的提升。In the display of the embodiment of the present application, the N-electrode of the LED is electrically connected via the N-electrode trace on the LED chip, and the P-electrode of the LED is electrically connected via the P-electrode trace on the circuit board. Since the N-electrode trace is arranged on the LED chip instead of the circuit board, the circuit board is a single-layer trace, and no through-holes are required, thus avoiding the reduction in the yield of the circuit board and the display caused by the drilling process. Moreover, since no through-holes are required on the circuit board, it is beneficial to improve the yield of the circuit board, especially to improve the yield and production capacity of high-resolution displays that use mini LEDs or micro LEDs as light-emitting elements.

以上實施方式僅用以說明本發明的技術方案而非限制,儘管參照較佳實施方式對本發明進行了詳細說明,本領域的普通技術人員應當理解,可以對本發明的技術方案進行修改或等同替換,而不脫離本發明技術方案的精神及範圍。The above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention is described in detail with reference to the preferred embodiments, ordinary technicians in this field should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention.

10a:LED晶圓 10:LED晶塊 11:基材 12:LED 121:N型半導體層 122:發光層 123:P型半導體層 131:N電極 1311:N電極金屬層 1312:N電極焊料層 132:P電極 1321:P電極金屬層 1322:P電極焊料層 141:N極走線 15:擋牆 20:電路板 21:基底 22:驅動晶片 231、2:N極焊盤 231a、232a:本體部 231b、232b:第一凸出部 231c、232c:第二凸出部 232、3:P極焊盤 241:P極走線 25:防焊層 D1:第一方向 D2:第二方向 100:顯示器 4:行走線 5:貫孔 10a: LED wafer 10: LED block 11: Substrate 12: LED 121: N-type semiconductor layer 122: Light-emitting layer 123: P-type semiconductor layer 131: N-electrode 1311: N-electrode metal layer 1312: N-electrode solder layer 132: P-electrode 1321: P-electrode metal layer 1322: P-electrode solder layer 141: N-electrode trace 15: Baffle 20: Circuit board 21: Base 22: Driver chip 231, 2: N-electrode pad 231a, 232a: Main body 231b, 232b: first protrusion 231c, 232c: second protrusion 232, 3: P-pole pad 241: P-pole trace 25: solder mask D1: first direction D2: second direction 100: display 4: trace 5: through hole

圖1為習知的電路板的平面示意圖。FIG. 1 is a schematic plan view of a conventional circuit board.

圖2為本申請一實施例的LED晶圓的平面示意圖FIG. 2 is a schematic plan view of an LED wafer according to an embodiment of the present application.

圖3為圖2沿線III-III的剖面示意圖。FIG3 is a schematic cross-sectional view along line III-III in FIG2 .

圖4為圖2沿線IV-IV的剖面示意圖。FIG. 4 is a schematic cross-sectional view along line IV-IV of FIG. 2 .

圖5為本申請一實施例的電路板的平面示意圖。FIG5 is a schematic plan view of a circuit board according to an embodiment of the present application.

圖6為本申請一實施例的顯示器的平面示意圖。FIG. 6 is a schematic plan view of a display according to an embodiment of the present application.

圖7為圖6沿線VII-VII的剖面示意圖。FIG. 7 is a schematic cross-sectional view along line VII-VII of FIG. 6 .

10:LED晶塊 10:LED crystal block

11:基材 11: Base material

12:LED 12:LED

131:N電極 131:N electrode

132:P電極 132:P electrode

141:N極走線 141: N-pole routing

20:電路板 20: Circuit board

21:基底 21: Base

231b、232b:第一凸出部 231b, 232b: first protrusion

231c、232c:第二凸出部 231c, 232c: second protrusion

241:P極走線 241: P pole routing

D1:第一方向 D1: First direction

D2:第二方向 D2: Second direction

100:顯示器 100: Display

Claims (10)

一種LED晶圓,其中,所述LED晶圓的部分區域定義為一個LED晶塊,所述LED晶塊包括: 透光的基材; 複數LED,間隔位於所述基材上,所述複數LED沿第一方向排佈為複數列,沿與所述第一方向交叉的第二方向排佈為複數行; 複數P電極和複數N電極,所述複數P電極和所述複數N電極為一行所述P電極和一行所述N電極交替週期性重複排佈,每個所述LED的遠離所述基材的一側間隔設置有一個所述P電極和一個所述N電極;以及 複數N極走線,每條所述N極走線與一個對應行所有的所述LED的所述N電極直接接觸並電性連接。 An LED wafer, wherein a partial area of the LED wafer is defined as an LED crystal block, and the LED crystal block includes: A light-transmitting substrate; A plurality of LEDs, spaced on the substrate, arranged in a plurality of columns along a first direction and arranged in a plurality of rows along a second direction intersecting the first direction; A plurality of P electrodes and a plurality of N electrodes, wherein the plurality of P electrodes and the plurality of N electrodes are arranged alternately and periodically, with one row of the P electrodes and one row of the N electrodes being spaced apart on a side of each LED away from the substrate; and A plurality of N-electrode traces, each of which is in direct contact with and electrically connected to the N electrodes of all the LEDs in a corresponding row. 如請求項1所述的LED晶圓,其中,所述LED晶塊還包括位於相鄰的所述LED之間的擋牆,以防止相鄰的所述LED之間發生光干擾。As described in claim 1, the LED wafer, wherein the LED die further includes a baffle located between adjacent LEDs to prevent light interference between adjacent LEDs. 一種電路板,其中,包括: 絕緣的基底; 複數P極走線,間隔位於所述基底上; 複數P極焊盤,間隔位於所述基底上,所述複數P極焊盤沿第一方向排佈為複數列,每一列中所有的所述P極焊盤藉由一條對應的所述P極走線電性連接,所述複數P極焊盤沿與所述第一方向交叉的第二方向排佈為複數行,每一行中相鄰的兩個所述P極焊盤絕緣且隔離;以及 複數N極焊盤,間隔位於所述基底上,所述複數N極焊盤沿所述第二方向排佈為複數行,每一行所述N極焊盤中至少有兩個所述N極焊盤,其中所述複數P極焊盤和所述複數N極焊盤為一行所述P極焊盤和一行所述N極焊盤交替週期性重複排佈;以及 驅動晶片,位於所述基底上並電性連接所述複數P極走線和所述複數N極焊盤。 A circuit board, comprising: an insulating substrate; a plurality of P-pole traces, spaced apart on the substrate; a plurality of P-pole pads, spaced apart on the substrate, the plurality of P-pole pads being arranged in a plurality of rows along a first direction, all the P-pole pads in each row being electrically connected via a corresponding P-pole trace, the plurality of P-pole pads being arranged in a plurality of rows along a second direction intersecting the first direction, the two adjacent P-pole pads in each row being insulated and isolated; and A plurality of N-pole pads are arranged in a plurality of rows along the second direction, each row of the N-pole pads has at least two N-pole pads, wherein the plurality of P-pole pads and the plurality of N-pole pads are arranged alternately and periodically with one row of the P-pole pads and one row of the N-pole pads; and a driving chip is located on the substrate and electrically connected to the plurality of P-pole traces and the plurality of N-pole pads. 如請求項3所述的電路板,其中,所述電路板還包括防焊層,所述防焊層至少覆蓋每條所述P極走線位於相鄰的兩個所述P極焊盤之間的部分。A circuit board as described in claim 3, wherein the circuit board further includes a solder mask layer, wherein the solder mask layer at least covers a portion of each of the P-pole traces located between two adjacent P-pole pads. 如請求項3或4所述的電路板,其中,所述複數P極焊盤和所述複數N極焊盤共同構成的複數行焊盤中,位於第一行行首的焊盤、位於第一行行尾的焊盤、位於最後一行行首的焊盤以及位於最後一行行尾的焊盤中,至少兩個焊盤包括本體部以及分別自所述第一方向和所述第二方向延伸超出所述本體部的第一凸出部和第二凸出部。A circuit board as described in claim 3 or 4, wherein, among the multiple rows of solder pads formed by the multiple P-pole solder pads and the multiple N-pole solder pads, among the solder pad at the beginning of the first row, the solder pad at the end of the first row, the solder pad at the beginning of the last row, and the solder pad at the end of the last row, at least two solder pads include a main body and a first protrusion and a second protrusion extending beyond the main body from the first direction and the second direction, respectively. 一種顯示器的製備方法,其中,包括: 提供如請求項3至5中任意一項所述的電路板,並切割根據請求項1或2所述的LED晶圓,得到所述LED晶塊;以及 將所述LED晶塊接合至所述電路板上,其中一行所述P電極對應一行所述P極焊盤,所述複數P極焊盤與所述複數P電極一一對應電性連接,一行所述N電極對應一行所述N極焊盤,所述複數N極焊盤的數量小於等於所述複數N電極的數量,每個所述N極焊盤電性連接一個對應的所述N電極,所述驅動晶片藉由一條所述P極走線、一列所述P極焊盤與一列所述LED的所述P電極電性連接,所述驅動晶片藉由一行所述N極焊盤、一條所述N極走線與一行所述LED的所述N電極電性連接。 A method for preparing a display, comprising: Providing a circuit board as described in any one of claims 3 to 5, and cutting the LED wafer according to claim 1 or 2 to obtain the LED crystal block; and The LED crystal block is bonded to the circuit board, wherein one row of the P electrodes corresponds to one row of the P electrode pads, the multiple P electrode pads are electrically connected to the multiple P electrodes one by one, one row of the N electrodes corresponds to one row of the N electrode pads, the number of the multiple N electrode pads is less than or equal to the number of the multiple N electrodes, and each N electrode pad is electrically connected to a corresponding N electrode. The driver chip is electrically connected to the P electrodes of a row of the LEDs via one P electrode trace, one row of the P electrode pads, and the driver chip is electrically connected to the N electrodes of a row of the LEDs via one row of the N electrode pads, one N electrode trace. 如請求項6所述的顯示器的製備方法,其中,在“所述複數P極焊盤和所述複數N極焊盤共同構成的複數行焊盤中,位於第一行行首的焊盤、位於第一行行尾的焊盤、位於最後一行行首的焊盤以及位於最後一行行尾的焊盤中,至少兩個焊盤包括本體部以及分別自所述第一方向和所述第二方向延伸超出所述本體部的第一凸出部和第二凸出部”的情況下,將所述LED晶塊接合至所述電路板上的步驟中,以所述凸出部為對位標記。A method for preparing a display as described in claim 6, wherein, in the step of bonding the LED chip to the circuit board, the protrusions are used as alignment marks under the condition that "among the plurality of rows of pads formed by the plurality of P-pole pads and the plurality of N-pole pads, at least two pads among the pads at the beginning of the first row, the pads at the end of the first row, the pads at the beginning of the last row, and the pads at the end of the last row include a main body and a first protrusion and a second protrusion extending from the first direction and the second direction beyond the main body, respectively." 一種顯示器,其中,包括如請求項3至5中任意一項所述的電路板以及與所述電路板結合的LED晶塊; 所述LED晶塊包括: 透光的基材; 複數LED,間隔位於所述基材上,所述複數LED沿第一方向排佈為複數列,沿與所述第一方向交叉的第二方向排佈為複數行; 複數P電極和複數N電極,所述複數P電極和所述複數N電極為一行所述P電極和一行所述N電極交替週期性重複排佈,每個所述LED的遠離所述基材的一側間隔設置有一個所述P電極和一個所述N電極;以及 複數N極走線,每個所述N極走線與一個對應行中所有的所述LED的所述N電極直接接觸並電性連接; 其中,一行所述P電極對應一行所述P極焊盤,所述複數P極焊盤與所述複數P電極一一對應電性連接,一行所述N電極對應一行所述N極焊盤,所述複數N極焊盤的數量小於等於所述複數N電極的數量,每個所述N極焊盤電性連接一個對應的所述N電極,所述驅動晶片藉由一條所述P極走線、一列所述P極焊盤與一列所述LED的所述P電極電性連接,所述驅動晶片藉由一行所述N極焊盤、一條所述N極走線與一行所述LED的所述N電極電性連接。 A display, comprising a circuit board as described in any one of claims 3 to 5 and an LED chip combined with the circuit board; The LED chip comprises: A light-transmitting substrate; A plurality of LEDs, spaced apart on the substrate, the plurality of LEDs arranged in a plurality of columns along a first direction and in a plurality of rows along a second direction intersecting the first direction; A plurality of P electrodes and a plurality of N electrodes, the plurality of P electrodes and the plurality of N electrodes being arranged alternately and periodically in a row of the P electrodes and a row of the N electrodes, and one of the P electrodes and one of the N electrodes being spaced apart on a side of each of the LEDs away from the substrate; and A plurality of N-pole traces, each of which is in direct contact with and electrically connected to the N-electrodes of all the LEDs in a corresponding row; Among them, one row of the P electrodes corresponds to one row of the P electrode pads, the multiple P electrode pads are electrically connected to the multiple P electrodes one by one, one row of the N electrodes corresponds to one row of the N electrode pads, the number of the multiple N electrode pads is less than or equal to the number of the multiple N electrodes, each N electrode pad is electrically connected to a corresponding N electrode, the driver chip is electrically connected to the P electrodes of a row of the LEDs through one P electrode trace and one row of the P electrode pads, and the driver chip is electrically connected to the N electrodes of a row of the LEDs through one row of the N electrode pads and one N electrode trace. 如請求項8所述的顯示器,其中,在“所述電路板還包括防焊層,所述防焊層至少覆蓋每條所述P極走線位於相鄰的兩個所述P極焊盤之間的部分”的情況下,所述防焊層位於所述N電極和所述P極走線之間,以使所述N電極和所述P極走線絕緣且隔離。A display as described in claim 8, wherein, in the case where "the circuit board further includes a solder resist layer, the solder resist layer at least covers a portion of each of the P-pole traces located between two adjacent P-pole pads", the solder resist layer is located between the N-electrode and the P-pole traces to insulate and isolate the N-electrode and the P-pole traces. 如請求項8或9所述的顯示器,其中,在“所述複數P極焊盤和所述複數N極焊盤共同構成的複數行焊盤中,位於第一行行首的焊盤、位於第一行行尾的焊盤、位於最後一行行首的焊盤以及位於最後一行行尾的焊盤中,至少兩個焊盤包括本體部以及分別自所述第一方向和所述第二方向延伸超出所述本體部的第一凸出部和第二凸出部”的情況下,所述第一凸出部和第二凸出部延伸超出所述基材。A display as described in claim 8 or 9, wherein, in the case of "among the multiple rows of solder pads formed by the multiple P-pole solder pads and the multiple N-pole solder pads, among the solder pad at the beginning of the first row, the solder pad at the end of the first row, the solder pad at the beginning of the last row, and the solder pad at the end of the last row, at least two solder pads include a main body and a first protrusion and a second protrusion extending from the first direction and the second direction beyond the main body, respectively", the first protrusion and the second protrusion extend beyond the substrate.
TW111136955A 2022-09-23 2022-09-29 Led wafer, circuit board, display and method for making same TWI823591B (en)

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