TW202413457A - 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 - Google Patents

感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 Download PDF

Info

Publication number
TW202413457A
TW202413457A TW112130022A TW112130022A TW202413457A TW 202413457 A TW202413457 A TW 202413457A TW 112130022 A TW112130022 A TW 112130022A TW 112130022 A TW112130022 A TW 112130022A TW 202413457 A TW202413457 A TW 202413457A
Authority
TW
Taiwan
Prior art keywords
group
formula
substituent
ring
resin composition
Prior art date
Application number
TW112130022A
Other languages
English (en)
Chinese (zh)
Inventor
後藤研由
石地洋平
川端健志
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202413457A publication Critical patent/TW202413457A/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04Acids; Metal salts or ammonium salts thereof
    • C08F220/06Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
TW112130022A 2022-08-12 2023-08-10 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 TW202413457A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022128923 2022-08-12
JP2022-128923 2022-08-12

Publications (1)

Publication Number Publication Date
TW202413457A true TW202413457A (zh) 2024-04-01

Family

ID=89851634

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112130022A TW202413457A (zh) 2022-08-12 2023-08-10 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法

Country Status (3)

Country Link
JP (1) JPWO2024034438A1 (https=)
TW (1) TW202413457A (https=)
WO (1) WO2024034438A1 (https=)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120136703A (zh) * 2019-08-09 2025-06-13 三菱瓦斯化学株式会社 化合物、聚合物、组合物、膜形成用组合物、图案形成方法、绝缘膜的形成方法及化合物的制造方法

Also Published As

Publication number Publication date
WO2024034438A1 (ja) 2024-02-15
JPWO2024034438A1 (https=) 2024-02-15

Similar Documents

Publication Publication Date Title
CN115997167B (zh) 感光化射线性或感放射线性树脂组合物、抗蚀剂膜
TW202436392A (zh) 感光化射線性或感放射線性樹脂組成物
TW202442717A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、電子器件之製造方法
TW202413461A (zh) 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、及電子器件之製造方法
TW202413457A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
TW202132374A (zh) 圖案形成方法、電子器件的製造方法、及感光化射線性或感放射線性樹脂組成物
TW202511313A (zh) 感光化射線性或感放射線性樹脂組成物、樹脂、光阻膜、圖案形成方法、及電子元件之製造方法
TW202432631A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
TW202432638A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
TW202437013A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
TW202347030A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、電子器件的製造方法
TW202432632A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法及電子器件之製造方法
TW202436391A (zh) 感光化射線性或感放射線性樹脂組成物
TW202534433A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子元件之製造方法
TW202419486A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
TW202532473A (zh) 感光性樹脂組成物、光阻膜、圖案形成方法、及電子元件之製造方法
TW202419480A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、電子器件之製造方法及聚合物
WO2024048463A1 (ja) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法
TW202443297A (zh) 圖案形成方法、圖案形成用套組、及電子器件之製造方法
TW202414084A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法及電子器件的製造方法
TW202347025A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、電子器件之製造方法
TW202413460A (zh) 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、及電子器件之製造方法
WO2025047309A1 (ja) 感活性光線性又は感放射線性樹脂組成物の製造方法、パターン形成方法、及び電子デバイスの製造方法
TW202610977A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、電子器件之製造方法
TW202602967A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、電子器件之製造方法