TW202412132A - Testing apparatus and testing method - Google Patents
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Abstract
Description
本揭露係關於一種檢查裝置及檢查方法。The present disclosure relates to an inspection device and an inspection method.
專利文獻1之檢查裝置會一邊使光射入至形成在被檢查體的攝影元件一邊使接觸端子電性接觸於該攝影元件的配線層來檢查攝影元件。專利文獻1中,攝影元件係使光從內面射入者,該內面為與設有配線層之一側相反側之一面。專利文獻1之檢查裝置係具備:載置台,係以與攝影元件的內面相對向之形態來載置被檢查體,且由透光構件形成;以及光照射機構,係配置成中間隔著載置台而與被檢查體相對向,具有朝向被檢查體的多個LED。The inspection device of Patent Document 1 inspects the photographic element by allowing light to enter the photographic element formed on the inspected object while allowing the contact terminal to electrically contact the wiring layer of the photographic element. In Patent Document 1, the photographic element allows light to enter from the inner surface, and the inner surface is a surface opposite to a side provided with the wiring layer. The inspection device of Patent Document 1 comprises: a mounting table on which the inspected object is mounted in a state opposite to the inner surface of the photographic element and formed of a light-transmitting component; and a light irradiation mechanism, which is arranged opposite to the inspected object with the mounting table in between and has a plurality of LEDs facing the inspected object.
專利文獻1:日本特開2019-106491號公報Patent document 1: Japanese Patent Application Publication No. 2019-106491
本揭露相關之技術係在內面照射型之攝影元件的檢查中使用側方入射型的照射部的情形,能夠將面內均勻的面狀之光照射至檢查對象體。The technology related to the present disclosure is to use a side-incident type irradiation unit in the inspection of an internally illuminated imaging element, so that a uniform planar light within the surface can be irradiated onto the inspection object.
本揭露一態樣之檢查裝置,係對檢查對象元件進行檢查;該檢查對象元件係使光從內面射入之內面照射型的攝影元件,且形成在檢查對象體,該內面為與設有配線層之一側相反側之一面;該檢查裝置係具備會以與該攝影元件之該內面相對向的形態來支撐該檢查對象體之載置台;該載置台係具有:透明的載置面,係供載置該檢查對象體;以及照射部,係配置在該載置面的下方,會朝向該載置面所載置的該檢查對象體照射光;該照射部係具有:導光板,係具有中間隔著該載置面而與該檢查對象體相對向之對向面;以及光源部,係設在該導光板之側方外側的區域,會朝向該導光板的側端面射出光;該導光板會使從該光源部射出且從該導光板的側端面射入之光從該對向面朝向該載置面射出;該載置台係進一步具有光學構件,該光學構件係會使從該導光板之該對向面朝向該載置面所載置的該檢查對象體之光穿透過;該光學構件係構成為被劃分成多個區域且可針對每一個該區域改變透光率。The present invention discloses an inspection device for inspecting an inspection object element. The inspection object element is an internal illumination type photographic element that allows light to enter from the inner surface, and is formed on the inspection object. The inner surface is a surface opposite to a side provided with a wiring layer. The inspection device is provided with a mounting table that supports the inspection object in a shape opposite to the inner surface of the photographic element. The mounting table has: a transparent mounting surface for mounting the inspection object; and an irradiation unit that is arranged below the mounting surface and irradiates light toward the inspection object mounted on the mounting surface; the irradiation unit has: a guide The light plate has an opposite surface that is opposite to the inspection object with the mounting surface in between; and the light source part is arranged in an area on the outer side of the light guide plate and emits light toward the side end surface of the light guide plate; the light guide plate allows the light emitted from the light source part and injected from the side end surface of the light guide plate to be emitted from the opposite surface toward the mounting surface; the mounting table further has an optical component, and the optical component allows the light from the opposite surface of the light guide plate to pass through toward the inspection object mounted on the mounting surface; the optical component is configured to be divided into a plurality of areas and the transmittance can be changed for each of the areas.
根據本揭露,在內面照射型之攝影元件的檢查中使用側方入射型的照射部的情形,便能夠將面內均勻的面狀之光照射至檢查對象體。According to the present disclosure, when a side-incident type irradiation unit is used in the inspection of an internally illuminated imaging element, it is possible to irradiate the inspection object with planar light that is uniform within the surface.
在半導體製程中,例如在半導體晶圓(以下稱為「晶圓」)等基板上會形成具有既定電路圖案的多個半導體元件。對所形成的半導體元件進行電性特性等的檢查,將其篩選為合格品和不合格品。例如,在各半導體元件被分割之前的基板的狀態下,係使用被稱為針測機等的檢查裝置來進行半導體元件的檢查。In the semiconductor manufacturing process, a plurality of semiconductor elements having a predetermined circuit pattern are formed on a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer"). The formed semiconductor elements are inspected for electrical characteristics and the like, and are screened into good and bad products. For example, the semiconductor elements are inspected using an inspection device such as a probe tester in the state of the substrate before each semiconductor element is separated.
在檢查裝置中,在支撐基板的載置台的上方設置有探針卡,該探針卡係具有多個為針狀的接觸端子的探針。在檢查時,探針卡與載置台上的晶片會接近,使探針卡的各探針接觸於形成在基板的半導體元件的各電極。在此狀態下,從設置在探針卡的上部的測試頭經由各探針向半導體元件供給電性訊號。然後,根據測試頭經由各探針從半導體元件接收到的電性訊號來篩選該半導體元件是否為不合格品。In the inspection device, a probe card is arranged above a stage supporting a substrate. The probe card is a probe having multiple needle-shaped contact terminals. During inspection, the probe card and the wafer on the stage are brought close to each other so that each probe of the probe card contacts each electrode of the semiconductor element formed on the substrate. In this state, an electrical signal is supplied to the semiconductor element through each probe from a test head arranged on the upper part of the probe card. Then, the semiconductor element is screened to see if it is defective based on the electrical signal received from the semiconductor element by the test head through each probe.
在檢查對象的半導體元件是CMOS感測器等攝影元件的情況下,與其他一般的半導體元件不同,係一邊對攝影元件照射光一邊進行檢查。 另外,近年來,作為攝影元件,已開發出會接收從與形成有配線層的表面側為相反側的內面側射入之光的內面照射型的攝影元件。 When the semiconductor device to be inspected is a photographic device such as a CMOS sensor, unlike other general semiconductor devices, the inspection is performed while irradiating the photographic device with light. In recent years, as a photographic device, an internally illuminated photographic device has been developed that receives light incident from the inner side opposite to the surface side where the wiring layer is formed.
在針對內面照射型的攝影元件的檢查裝置中,載置台係以與上述攝影元件的內面相對向的形態來支撐基板。另外,在針對內面照射型的攝影元件的檢查裝置中,載置台係具有:透明的載置面,係供載置基板;以及照射部,係配置在載置面的下方,會朝向該載置面所載置的基板照射光。In the inspection device for the internal surface illumination type imaging element, the mounting table supports the substrate in a state facing the internal surface of the imaging element. In addition, in the inspection device for the internal surface illumination type imaging element, the mounting table has: a transparent mounting surface for mounting the substrate; and an irradiation unit, which is arranged below the mounting surface and irradiates light toward the substrate mounted on the mounting surface.
照射部例如係具有:導光板,係具有中間隔著載置面而與基板相對向的對向面;以及光源部,係設置在該導光板的側方外側的區域,會朝向導光板的側端面射出光。並且,在照射部中,導光板會將從光源部射出且從該導光板的側端面射入的光藉由反射點等朝向該對向面反射,並從該對向面以面狀的光射出。接著,此面狀的光會被照射至載置面所載置的基板。另外,以下,將上述般光會從導光板的側端面射入的照射部稱為側方入射型的照射部。The irradiation part, for example, includes: a light guide plate having an opposing surface that is opposite to the substrate with the mounting surface in between; and a light source part that is disposed in an area on the outer side of the light guide plate and emits light toward the side end surface of the light guide plate. Furthermore, in the irradiation part, the light guide plate reflects the light emitted from the light source part and incident from the side end surface of the light guide plate toward the opposing surface by a reflection point or the like, and emits the light from the opposing surface as a planar light. Then, the planar light is irradiated onto the substrate placed on the mounting surface. In addition, hereinafter, the irradiation part in which the light is incident from the side end surface of the light guide plate is referred to as a side-incident type irradiation part.
此外,在檢查時對基板照射面狀的光的情況下,上述面狀的光較佳為面內均勻。在使用側方入射型的照射部的情況下,作為使上述面狀的光在面內均勻的方法,可以考慮調整射入到導光板的側端面的光的強度的方法、調整導光板的上述反射點的尺寸或排列的方法等。但是,在此等方法中,難以導出上述面狀的光成為面內均勻的條件,亦即難以使上述面狀的光在面內成為均勻。Furthermore, when the substrate is irradiated with planar light during inspection, the planar light is preferably uniform within the surface. When a side-incident irradiation unit is used, as a method for making the planar light uniform within the surface, a method of adjusting the intensity of the light incident on the side surface of the light guide plate, a method of adjusting the size or arrangement of the reflection points of the light guide plate, etc. can be considered. However, in such methods, it is difficult to guide the planar light to be uniform within the surface, that is, it is difficult to make the planar light uniform within the surface.
因此,本揭露相關之技術係在內面照射型之攝影元件的檢查中使用側方入射型的照射部的情形,能夠將面內均勻的面狀之光照射至檢查對象體。Therefore, the technology related to the present disclosure is to use a side-incident type irradiation unit in the inspection of an internally illuminated imaging element, so that a uniform planar light within the surface can be irradiated onto the inspection object.
以下,參照圖式說明本實施形態相關的檢查裝置及檢查方法。另外,在本說明書及圖式中,對於具有實質上相同的功能構成的要素會賦予相同的符號以省略重複說明。Hereinafter, the inspection device and the inspection method related to the present embodiment will be described with reference to the drawings. In addition, in the present specification and drawings, the same symbols will be given to the elements having substantially the same functional configuration to omit repeated description.
在本實施形態相關的技術中,由於檢查對象元件是內面照射型攝影元件,因此首先對內面照射型攝影元件進行說明。In the technology related to this embodiment, since the inspection target element is an internal surface illumination type imaging element, the internal surface illumination type imaging element will be described first.
[內面照射型攝影元件] 圖1係概略顯示形成有內面照射型攝影元件之作為檢查對象體的基板之構成的俯視圖,圖2係概略顯示內面照射型攝影元件之構成的剖面圖。 如圖1所示,在為基板的一例之大致圓板狀的晶圓W上形成有多個內面照射型攝影元件D。 [Internal Surface Illumination Type Photographic Element] FIG. 1 is a top view schematically showing the structure of a substrate as an inspection object on which an internal surface illumination type photographic element is formed, and FIG. 2 is a cross-sectional view schematically showing the structure of the internal surface illumination type photographic element. As shown in FIG. 1 , a plurality of internal surface illumination type photographic elements D are formed on a substantially circular plate-shaped wafer W as an example of a substrate.
內面照射型攝影元件D是固態攝影元件,例如,如圖2所示,具有為光二極體的光電轉換部PD及包含多個配線PLa的配線層PL。另外,在內面照射型攝影元件D中,光會從與設置有配線層PL的一側(表面側)相反側的一面(晶圓W的內面)射入。然後,內面照射型攝影元件D經由晶片上透鏡(On-Chip Lens)L及彩色濾光片F以光電轉換部PD接收從晶圓W的內面射入的光。彩色濾光片F由紅色彩色濾光片FR、藍色彩色濾光片FB及綠色彩色濾光片FG構成。The internally illuminated imaging element D is a solid-state imaging element, and has a photoelectric conversion unit PD which is a photodiode and a wiring layer PL including a plurality of wirings PLa, as shown in FIG. 2 . In addition, in the internally illuminated imaging element D, light is incident from a side (the inner side of the wafer W) opposite to a side (the surface side) where the wiring layer PL is provided. Then, the internally illuminated imaging element D receives the light incident from the inner side of the wafer W through the on-chip lens L and the color filter F with the photoelectric conversion unit PD. The color filter F is composed of a red color filter FR, a blue color filter FB, and a green color filter FG.
另外,在內面照射型攝影元件D的表面Da即晶圓W的表面形成有電極E,該電極E係電性連接於配線層PL的配線PLa。配線PLa係用於向內面照射型攝影元件D的內部的電路元件輸入電性訊號,或者將來自該電路元件的電性訊號輸出到內面照射型攝影元件D的外部。配線層PL也可以包含會控制光電轉換部相關訊號的像素電晶體。In addition, an electrode E is formed on the surface Da of the internal illumination type imaging device D, that is, the surface of the wafer W, and the electrode E is electrically connected to the wiring PLa of the wiring layer PL. The wiring PLa is used to input an electrical signal to the circuit element inside the internal illumination type imaging device D, or to output an electrical signal from the circuit element to the outside of the internal illumination type imaging device D. The wiring layer PL may also include a pixel transistor that controls a signal related to the photoelectric conversion unit.
[檢查裝置] 接著,對本實施形態相關的檢查裝置進行說明。 圖3及圖4分別係顯示作為本實施形態相關的檢查裝置的針測機1的構成的概略之立體圖及前視圖。在圖4中,為了表示圖3的針測機1的後述收容室與裝載器所內建的構成要素,將其一部分以剖面來顯示。 [Inspection device] Next, the inspection device related to this embodiment is described. Fig. 3 and Fig. 4 are respectively a perspective view and a front view showing the schematic structure of the needle tester 1 as the inspection device related to this embodiment. In Fig. 4, in order to show the components built into the storage chamber and the loader of the needle tester 1 of Fig. 3, a part of them is shown in cross section.
針測機1係對形成在晶圓W上的多個內面照射型攝影元件D(以下,有時會省略為攝影元件D)分別進行電性特性之檢查。如圖3及圖4所示,針測機1具備收容室2、與收容室2相鄰配置的裝載器3、及以覆蓋收容室2的方式配置的測試器4。The probe tester 1 is used to inspect the electrical characteristics of a plurality of internally illuminated imaging devices D (hereinafter sometimes abbreviated as imaging devices D) formed on a wafer W. As shown in FIGS. 3 and 4 , the probe tester 1 includes a storage chamber 2, a loader 3 disposed adjacent to the storage chamber 2, and a tester 4 disposed to cover the storage chamber 2.
收容室2是內部為空洞的框體,具有作為載置台的台座10。如後所述,台座10係以攝影元件D的內面與該台座10相對向的形態來支撐晶圓W。The storage chamber 2 is a hollow frame, and has a stage 10 as a mounting table. As described later, the stage 10 supports the wafer W in a manner such that the inner surface of the imaging element D faces the stage 10.
此外,台座10係構成為會在水平方向及鉛垂方向上移動自如,能夠調整後述探針卡11與晶圓W的相對位置,以使晶圓W表面的電極E與後述探針卡11的探針11a接觸。In addition, the stage 10 is configured to be movable in the horizontal direction and the vertical direction, and can adjust the relative position of the probe card 11 and the wafer W so that the electrode E on the surface of the wafer W contacts the probe 11 a of the probe card 11 .
另外,在收容室2中的台座10的上方,以與該台座10相對向的方式配置探針卡11。探針卡11具有多個作為接觸端子的針狀的探針11a。每個探針11a係形成為能夠接觸於晶圓W的表面上的相對應之電極E。 探測卡11通過介面12連接到測試器4。在檢查攝影元件D時,每個探針11a會接觸於對應的電極E,將經由介面12從測試器4輸入的電力供給至攝影元件D,或者經由介面12將來自攝影元件D的訊號傳輸給測試器4。 In addition, a probe card 11 is arranged above the pedestal 10 in the storage chamber 2 so as to face the pedestal 10. The probe card 11 has a plurality of needle-shaped probes 11a as contact terminals. Each probe 11a is formed to be able to contact a corresponding electrode E on the surface of the wafer W. The probe card 11 is connected to the tester 4 through the interface 12. When inspecting the imaging element D, each probe 11a contacts the corresponding electrode E, supplies the power input from the tester 4 through the interface 12 to the imaging element D, or transmits the signal from the imaging element D to the tester 4 through the interface 12.
關於配置在收容室2內之感測器橋30、進退機構33將於之後加以說明。The sensor bridge 30 and the advancing and retreating mechanism 33 disposed in the storage chamber 2 will be described later.
裝載器3將收容在為輸送容器的FOUP(未圖示)中的晶圓W取出並向收容室2的台座10搬送。另外,裝載器3從台座10接收攝影元件D的電性特性的檢查結束後的晶圓W,並收容到FOUP中。The loader 3 takes out the wafer W stored in a FOUP (not shown) as a transport container and transfers it to the stage 10 of the storage chamber 2. In addition, the loader 3 receives the wafer W after the electrical characteristics of the imaging element D have been inspected from the stage 10 and stores it in the FOUP.
裝載器3具有會進行各種控制等的控制部13。控制部13係由例如具備CPU等處理器或記憶體等的電腦構成,具有程式儲存部。在程式儲存部中儲存有對電性特性檢查時或後述照度分布取得處理時的針測機1的各構成部的動作進行控制的程式。上述程式也會進行電性特性檢查或照度分布取得處理所需要的運算。另外,上述程式可以記錄在電腦可讀取記憶媒體,也可以是從該記憶媒體安裝到控制部13。上述記憶媒體可以是暫態儲存者也可以是非暫態儲存者。The loader 3 has a control unit 13 that performs various controls. The control unit 13 is composed of a computer having a processor such as a CPU or a memory, and has a program storage unit. The program storage unit stores a program for controlling the operation of each component of the probe tester 1 during the electrical characteristic inspection or the illumination distribution acquisition process described later. The above program also performs the calculations required for the electrical characteristic inspection or the illumination distribution acquisition process. In addition, the above program can be recorded in a computer-readable storage medium, or it can be installed from the storage medium to the control unit 13. The above storage medium can be a temporary storage or a non-transient storage.
此外,控制部13經由配線14連接到台座10並且經由配線15連接到測試器電腦16。控制部13根據來自測試器電腦16的輸入訊號,控制台座10的後述光源部52的動作。另外,控制部13也可以設置在收容室2中。The control unit 13 is connected to the stand 10 via the wiring 14 and is connected to the tester computer 16 via the wiring 15. The control unit 13 controls the operation of the light source unit 52 of the stand 10 described later based on the input signal from the tester computer 16. The control unit 13 may also be provided in the storage chamber 2.
測試器4具有測試板(未圖示),該測試板重現了搭載攝影元件D的母板的電路配置的一部分。測試板連接到測試器電腦16。測試器電腦16基於來自攝影元件D的訊號來判斷該攝影元件D是否良好。在測試器4中,藉由更換上述測試板,便能夠重現多種母板的電路構成。The tester 4 has a test board (not shown) that reproduces a part of the circuit configuration of the motherboard on which the imaging element D is mounted. The test board is connected to the tester computer 16. The tester computer 16 determines whether the imaging element D is good or not based on the signal from the imaging element D. In the tester 4, by replacing the above-mentioned test board, the circuit configuration of various motherboards can be reproduced.
此外,針測機1具備使用者介面部17。使用者介面部17用於向使用者顯示資訊或供使用者輸入指示,例如由具有觸控面板或鍵盤等的顯示面板構成。In addition, the probe tester 1 has a user interface portion 17. The user interface portion 17 is used to display information to the user or allow the user to input instructions, and is composed of, for example, a display panel having a touch panel or a keyboard.
在具有上述各部位的針測機1中,在檢查攝影元件D的電性特性時,測試器電腦16會向經由各探針11a與攝影元件D連接的測試板傳送資料。然後,測試器電腦16根據來自該測試板的電性訊號來判定所傳送的資料是否已被該測試板正確地處理。In the probe tester 1 having the above-mentioned parts, when checking the electrical characteristics of the imaging device D, the tester computer 16 transmits data to the test board connected to the imaging device D via the probes 11a. Then, the tester computer 16 determines whether the transmitted data has been correctly processed by the test board based on the electrical signal from the test board.
[收容室2的內部構造] 接著,使用圖5進一步說明收容室2的內部構造。圖5係顯示收容室2之內部構造之概略的立體圖。 [Internal structure of storage chamber 2] Next, the internal structure of storage chamber 2 will be further described using FIG. 5. FIG. 5 is a three-dimensional diagram showing a schematic internal structure of storage chamber 2.
如圖所示,在收容室2內,台座10係配置在基台20上,具有會沿圖中X方向移動的X方向移動單元21、會沿圖中Y方向移動的Y方向移動單元22、及會沿圖中Z方向移動的Z方向移動單元23。該等X方向移動單元21、Y方向移動單元22及Z方向移動單元23構成使台座10與後述照度感測器32相對移動的移動機構。As shown in the figure, in the storage room 2, the pedestal 10 is arranged on the base 20, and has an X-direction moving unit 21 that moves along the X direction in the figure, a Y-direction moving unit 22 that moves along the Y direction in the figure, and a Z-direction moving unit 23 that moves along the Z direction in the figure. The X-direction moving unit 21, the Y-direction moving unit 22, and the Z-direction moving unit 23 constitute a moving mechanism that enables the pedestal 10 and the illumination sensor 32 described later to move relative to each other.
X方向移動單元21係藉由滾珠螺桿21b的轉動來使台座10沿著往X方向延伸的導軌21a移動於X方向。滾珠螺桿21b係藉由馬達(未圖示)轉動。另外,藉由與該馬達組合的編碼器(未圖示),便能夠檢測台座10的移動量。The X-direction moving unit 21 moves the pedestal 10 in the X-direction along the guide rail 21a extending in the X-direction by rotating the ball screw 21b. The ball screw 21b is rotated by a motor (not shown). In addition, the movement amount of the pedestal 10 can be detected by an encoder (not shown) combined with the motor.
Y方向移動單元22係藉由滾珠螺桿22b的轉動來使台座10沿著往Y方向延伸的導軌22a移動於Y方向。滾珠螺桿22b係藉由馬達22c轉動。另外,藉由與該馬達22c組合的編碼器22d,便能夠檢測台座10的移動量。The Y-direction moving unit 22 moves the pedestal 10 in the Y direction along the guide rail 22a extending in the Y direction by rotating the ball screw 22b. The ball screw 22b is rotated by the motor 22c. In addition, the encoder 22d combined with the motor 22c can detect the movement amount of the pedestal 10.
藉由以上構成,X方向移動單元21與Y方向移動單元22會使台座10沿著水平面往彼此正交的X方向與Y方向移動。With the above configuration, the X-direction moving unit 21 and the Y-direction moving unit 22 enable the pedestal 10 to move in the X-direction and the Y-direction that are orthogonal to each other along the horizontal plane.
Z方向移動單元23具有未圖示的馬達及編碼器,會使台座10沿著Z方向上下移動,並且能夠檢測其移動量。Z方向移動單元23會使台座10朝向探針卡11移動,以使形成在晶圓W上的攝影元件D的電極與探針抵接。另外,台座10係配置成會藉由未圖示的馬達在Z方向移動單元23上繞圖中的θ方向旋轉自如。The Z-direction moving unit 23 has a motor and an encoder (not shown), and moves the stage 10 up and down along the Z direction, and can detect the amount of movement. The Z-direction moving unit 23 moves the stage 10 toward the probe card 11 so that the electrode of the imaging element D formed on the wafer W abuts against the probe. In addition, the stage 10 is configured to be able to rotate freely around the θ direction in the figure on the Z-direction moving unit 23 by a motor (not shown).
另外,收容室2的內部係配置有下部攝影單元24。 下部攝影單元24會拍攝形成在探針卡11上的探針11a。該下部攝影單元24具有例如由CMOS(Complementary Metal Oxide Semiconductor)攝影機等所構成的下部攝影機(未圖示)及將光從攝影對象引導到下部攝影機的光學系統(未圖示)。下部攝影單元24係藉由下部攝影機拍攝形成在探針卡11上的探針11a,其拍攝結果被輸出到控制部13中,例如用於晶圓W上的電極與探針11a的對位。 下部攝影單元24係固定在台座10,會與台座10一起移動於X方向、Y方向及Z方向。 In addition, a lower camera unit 24 is disposed inside the storage chamber 2. The lower camera unit 24 photographs the probe 11a formed on the probe card 11. The lower camera unit 24 has a lower camera (not shown) composed of, for example, a CMOS (Complementary Metal Oxide Semiconductor) camera and an optical system (not shown) that guides light from the photographed object to the lower camera. The lower camera unit 24 photographs the probe 11a formed on the probe card 11 by the lower camera, and the photographing result is output to the control unit 13, for example, for alignment of the electrode on the wafer W and the probe 11a. The lower camera unit 24 is fixed to the stage 10 and moves in the X direction, Y direction, and Z direction together with the stage 10.
另外,在收容室2的內部,於台座10與探針卡11在鉛垂方向上之間的位置係配置有作為搭載部的感測器橋30。感測器橋30係設有作為攝影部的上部攝影機31、及作為照度測定部的照度感測器32。Furthermore, a sensor bridge 30 as a mounting portion is disposed in the interior of the storage chamber 2 at a position between the base 10 and the probe card 11 in the vertical direction. The sensor bridge 30 is provided with an upper camera 31 as a photographing portion and an illuminance sensor 32 as an illuminance measuring portion.
上部攝影機31係拍攝晶圓W,由例如CMOS攝影機等構成。對上部攝影機31也可以與下部攝影機同樣地設置光學系統。 照度感測器32係用於取得來自台座10中晶圓W的載置面40a(參照後述的圖6的符號40a)的光的照度的面內分布。照度感測器32測定來自上述載置面的局部區域的光的照度。另外,在以下的說明中,假設照度感測器32在1次測定中測定照度的載置面中的區域(以下稱為「單位感測器區域」)是與1個攝影元件D相對應的區域。 The upper camera 31 is used to photograph the wafer W and is composed of, for example, a CMOS camera. The upper camera 31 can also be provided with an optical system similar to the lower camera. The illuminance sensor 32 is used to obtain the in-plane distribution of the illuminance of light from the mounting surface 40a (refer to the symbol 40a in FIG. 6 described later) of the wafer W in the pedestal 10. The illuminance sensor 32 measures the illuminance of light from a local area of the mounting surface. In addition, in the following description, it is assumed that the area on the mounting surface where the illuminance sensor 32 measures the illuminance in one measurement (hereinafter referred to as the "unit sensor area") is the area corresponding to one imaging element D.
在上部攝影機31的拍攝結果或在照度感測器32的測定結果會被輸出至控制部13。The shooting result of the upper camera 31 or the measurement result of the illuminance sensor 32 is output to the control unit 13 .
在感測器橋30上係設置有進退機構33(參照圖4)。進退機構33具有會引導感測器橋30的進退的導軌33a及驅動部33b,該驅動部33b係由以會使感測器橋30沿著導軌33a移動之方式進行驅動的馬達與滾珠螺桿的組合等所構成。藉由進退機構33使感測器橋30即照度感測器32相對於與台座10的載置面相對向的區域進退。具體而言,藉由進退機構33使照度感測器32在俯視下比台座10的載置面外側的區域和與上述載置面相對向的既定區域之間移動。The sensor bridge 30 is provided with an advance and retreat mechanism 33 (see FIG. 4 ). The advance and retreat mechanism 33 has a guide rail 33a that guides the advance and retreat of the sensor bridge 30 and a driving part 33b, and the driving part 33b is composed of a combination of a motor and a ball screw that drives the sensor bridge 30 to move along the guide rail 33a. The advance and retreat mechanism 33 advances and retreats the sensor bridge 30, that is, the illuminance sensor 32 relative to the area opposite to the mounting surface of the pedestal 10. Specifically, the advance and retreat mechanism 33 moves the illuminance sensor 32 between an area outside the mounting surface of the pedestal 10 in a plan view and a predetermined area opposite to the mounting surface.
[台座10] 接著,說明台座10的構成。圖6係概略顯示台座10之構成的剖面圖。圖7係後述液晶面板的局部放大剖面圖。 [Base 10] Next, the structure of the base 10 will be described. FIG6 is a cross-sectional view schematically showing the structure of the base 10. FIG7 is a partially enlarged cross-sectional view of a liquid crystal panel described later.
台座10係以攝影元件D的內面與該台座10相對向的形態來支撐晶圓W,例如圖6所示,具有頂板40、照射部40、液晶面板60、及基台70。The pedestal 10 supports the wafer W in a configuration in which the inner surface of the imaging element D faces the pedestal 10 , and as shown in FIG. 6 , includes a top plate 40 , an irradiation unit 40 , a liquid crystal panel 60 , and a base 70 .
頂板40是由透光材料構成的平板狀的構件,其上面40a成為供載置晶圓W的載置面。頂板40例如會使從照射部50朝向晶圓W的方向射出而穿透過液晶面板60的光一邊擴散一邊穿透過。亦即,頂板40形成為例如也作為擴散板而發揮功能。另外,頂板40係形成為例如在俯視時一邊的長度大於晶圓W的直徑的正方形。The top plate 40 is a flat plate-shaped member made of a light-transmitting material, and its upper surface 40a serves as a mounting surface for mounting the wafer W. The top plate 40 diffuses and transmits the light emitted from the irradiation unit 50 toward the wafer W and passing through the liquid crystal panel 60. That is, the top plate 40 is formed to function as a diffusion plate, for example. In addition, the top plate 40 is formed in a square shape, for example, with one side having a length greater than the diameter of the wafer W when viewed from above.
另外,上述「透光材料」是使檢查範圍的波長的光(亦即來自照射部50的光)穿透過的材料,例如是玻璃。The “light-transmitting material” mentioned above is a material that allows light of a wavelength within the inspection range (ie, light from the irradiation unit 50 ) to pass therethrough, such as glass.
照射部50係載置於台座10中載置面的下方,會朝向該載置面所載置的晶圓W照射光。本例中,照射部50係配置在其上面40a成為載置面之頂板40下方,會朝向該上面40a所載置的晶圓W照射光。此外,以下,會有將頂板40的上面40a稱為載置面40a的情形。The irradiation unit 50 is placed below the mounting surface of the pedestal 10, and irradiates light toward the wafer W placed on the mounting surface. In this example, the irradiation unit 50 is arranged below the top plate 40 whose top surface 40a serves as the mounting surface, and irradiates light toward the wafer W placed on the top surface 40a. In addition, hereinafter, the top surface 40a of the top plate 40 may be referred to as the mounting surface 40a.
照射部50係具有例如導光板51與光源部52。The irradiation unit 50 includes, for example, a light guide plate 51 and a light source unit 52 .
導光板51係具有中間隔著載置面40a而與晶圓W相對向的對向面51a,例如是形成為平板狀的構件。導光板51的俯視下的形狀及尺寸係例如與頂板40相同。該導光板51會在其內部使從光源部52射出且從該導光板51的側端面射入之光反射及擴散,從上述對向面51a作為面狀之光射出。另外,導光板51係配置成在俯視下,晶圓W的攝影元件形成區域會被包含在射出面狀的光的區域內。The light guide plate 51 has an opposing surface 51a that is opposite to the wafer W with the mounting surface 40a in between, and is, for example, a member formed in the shape of a flat plate. The shape and size of the light guide plate 51 when viewed from above are, for example, the same as those of the top plate 40. The light guide plate 51 reflects and diffuses the light emitted from the light source unit 52 and incident from the side surface of the light guide plate 51 inside, and emits it from the opposing surface 51a as planar light. In addition, the light guide plate 51 is configured so that, when viewed from above, the imaging element formation area of the wafer W is included in the area where the planar light is emitted.
光源部52係設置在導光板51的側方外側的區域,會朝向導光板51的側端面射出光。光源部52例如在導光板51的每一邊具有沿著該邊設置的多個LED(未圖示)。 另外,在本實施形態中,為了將光源部52的LED的熱往台座10的外部釋放,在支撐LED的基板(未圖示)的內面設置有散熱板53。散熱板53例如由金屬材料形成。在散熱板53上也可以形成用於冷卻光源部52的LED的水等冷媒會流通的路徑。 The light source unit 52 is disposed in an area outside the side of the light guide plate 51, and emits light toward the side end surface of the light guide plate 51. The light source unit 52 has, for example, a plurality of LEDs (not shown) disposed along each side of the light guide plate 51. In addition, in the present embodiment, in order to release the heat of the LED of the light source unit 52 to the outside of the base 10, a heat sink 53 is disposed on the inner surface of the substrate (not shown) supporting the LED. The heat sink 53 is formed of, for example, a metal material. A path through which a refrigerant such as water for cooling the LED of the light source unit 52 can flow can also be formed on the heat sink 53.
液晶面板60是使從導光板51的上述對向面51a朝向載置面40a所載置的晶圓W的光穿透過的光學構件的一例,係構成為被劃分成多個區域,可針對每一個該區域(以下稱為元件區域)改變透光率。具體而言,例如圖7所示,液晶面板60具有液晶層61與將該液晶層61夾入並密封的玻璃基板62, 63,在玻璃基板62, 63各自的與液晶層61相反側的部分設置有偏光板64, 65。另外,在液晶面板60中,在上述每一個元件區域,在玻璃基板62, 63分別形成有透明電極(未圖示)。藉由使施加在該透明電極間的電壓按照每個元件區域變化,便能夠調整各元件區域的透光率。包含向上述透明電極施加電壓的電源等的電路(未圖示)係由控制部13控制。亦即,液晶面板60的透光率係由控制部13控制。The liquid crystal panel 60 is an example of an optical component that allows light from the above-mentioned opposite surface 51a of the light guide plate 51 to pass through the wafer W placed on the placing surface 40a, and is configured to be divided into a plurality of regions, and the transmittance can be changed for each of the regions (hereinafter referred to as the element region). Specifically, as shown in FIG. 7, for example, the liquid crystal panel 60 has a liquid crystal layer 61 and glass substrates 62, 63 that sandwich and seal the liquid crystal layer 61, and polarizing plates 64, 65 are provided on the portions of the glass substrates 62, 63 on the opposite sides of the liquid crystal layer 61. In addition, in the liquid crystal panel 60, transparent electrodes (not shown) are formed on the glass substrates 62, 63 in each of the above-mentioned element regions. By changing the voltage applied between the transparent electrodes according to each element region, the transmittance of each element region can be adjusted. A circuit (not shown) including a power source for applying a voltage to the transparent electrode is controlled by the control unit 13. That is, the light transmittance of the liquid crystal panel 60 is controlled by the control unit 13.
在針測機1中,從照射部50的光源部52的LED射出並從導光板51的側端面射入的光會在該導光板51內部被反射及擴散,從與晶圓W相對向的對向面51a作為面狀的光而射出。接著,該面狀的光會例如穿透過液晶面板60及頂板40,射入至晶圓W的攝影元件D。 另外,光源部52的LED會射出包含檢查範圍的波長的光之光。檢查範圍的波長的光例如是可見光區域的波長的光,根據攝影元件D的種類,也有會是紅外線等可見光區域外的光之情形。 In the probe 1, the light emitted from the LED of the light source section 52 of the irradiation section 50 and incident from the side surface of the light guide plate 51 is reflected and diffused inside the light guide plate 51, and is emitted as planar light from the opposite surface 51a opposite to the wafer W. Then, the planar light, for example, passes through the liquid crystal panel 60 and the top plate 40, and is incident on the imaging element D of the wafer W. In addition, the LED of the light source section 52 emits light including the wavelength of the inspection range. The wavelength of the inspection range is, for example, light of the wavelength in the visible light region, and depending on the type of the imaging element D, it may be light outside the visible light region such as infrared rays.
基台70係配置在中間隔著頂板30、液晶面板60及導光板51而與載置面40a上的晶圓W相對向的位置,亦即導光板51的下方,會支撐頂板40、液晶面板60及照射部50。例如,頂板40係藉由透明接著材料的接著而被保持在液晶面板60,液晶面板60係藉由透明接著材料的接著而被保持在照射部50,照射部50係藉由接著材料的接著而被保持在基台70。The base 70 is disposed at a position opposite to the wafer W on the mounting surface 40a, that is, below the light guide plate 51, with the top plate 30, the liquid crystal panel 60, and the light guide plate 51 in between, and supports the top plate 40, the liquid crystal panel 60, and the irradiation unit 50. For example, the top plate 40 is held on the liquid crystal panel 60 by bonding with a transparent bonding material, the liquid crystal panel 60 is held on the irradiation unit 50 by bonding with a transparent bonding material, and the irradiation unit 50 is held on the base 70 by bonding with a bonding material.
基台70也可以設有會調整載置面40a所載置的晶圓W的攝影元件D的溫度的調溫部(未圖示)。調溫部也可以設有會加熱晶圓W的加熱器(例如電阻加熱式的加熱器)或者會冷卻晶圓W者(例如冷卻用冷媒的流道)之至少任一者。The base 70 may also be provided with a temperature control unit (not shown) that adjusts the temperature of the imaging element D of the wafer W placed on the placement surface 40a. The temperature control unit may also be provided with at least one of a heater that heats the wafer W (e.g., a resistance heating heater) or a device that cools the wafer W (e.g., a flow path for a cooling medium).
[照度分布取得/穿透率決定處理] 接著,說明由針測機1所進行的照度分布取得/穿透率決定處理。照度分布取得/穿透率決定處理是取得經由台座10的載置面40a照射的光的照度之面內分布並決定液晶面板60的穿透率的處理,例如會在針測機1的啟動時或維護時、品質管理(QC:Quality Control)時等進行。 [Illuminance distribution acquisition/transmittance determination processing] Next, the illuminance distribution acquisition/transmittance determination processing performed by the probe tester 1 is described. The illuminance distribution acquisition/transmittance determination processing is a process for acquiring the in-plane distribution of the illuminance of the light irradiated through the mounting surface 40a of the pedestal 10 and determining the transmittance of the liquid crystal panel 60. For example, it is performed when the probe tester 1 is started or maintained, or during quality control (QC: Quality Control).
在照度分布取得/穿透率決定處理中,首先,台座10會藉由X方向移動單元21、Y方向移動單元22及Z方向移動單元23而移動到水平面內的既定位置且為既定高度。另外,上述既定位置例如是與形成在晶圓W上的多個攝影元件中的一個對應的位置,即與載置面40a的一個單位感測器區域對應的位置。 與上述台座10的移動同時或者在其移動的前後,藉由進退機構33使該感測器橋30移動,以使感測器橋30位於移動後的台座10的上方的區域。 In the illumination distribution acquisition/transmittance determination process, first, the pedestal 10 is moved to a predetermined position in the horizontal plane and a predetermined height by the X-direction moving unit 21, the Y-direction moving unit 22, and the Z-direction moving unit 23. In addition, the predetermined position is, for example, a position corresponding to one of the plurality of imaging elements formed on the wafer W, that is, a position corresponding to a unit sensor area of the mounting surface 40a. Simultaneously with the movement of the pedestal 10 or before or after the movement, the sensor bridge 30 is moved by the advance and retreat mechanism 33 so that the sensor bridge 30 is located in the area above the moved pedestal 10.
接著,在液晶面板60(的各元件區域)被調整為既定透光率(例如50%)的狀態下,控制台座10的照射部50,從導光板51的上述對向面51a射出面狀的光。另外,此時,台座10的照射部50係被控制成在與檢查時相同的條件下,亦即在液晶面板60的各元件區域為上述既定透光率的狀態下對晶圓W照射接近於所欲照度的光的條件下進行動作。藉此,從台座10的載置面40a向上方照射光。並且,藉由照度感測器32測定從載置面40a的某個單位感測器區域照射的光的照度。之後,反覆X方向移動單元21及Y方向移動單元22所致的台座10的移動、以及照度感測器32所致的照度的測定。其結果,針對載置面40a的至少與晶片W的攝影元件形成區域對應的所有部分,測定來自各單位感測器區域的光的照度。基於該測定結果,藉由控制部13取得經由載置面40a照射的光的照度的面內分布。Next, when the liquid crystal panel 60 (each component area) is adjusted to a predetermined transmittance (e.g., 50%), the irradiation section 50 of the stage 10 is controlled to emit planar light from the above-mentioned opposite surface 51a of the light guide plate 51. In addition, at this time, the irradiation section 50 of the stage 10 is controlled to operate under the same conditions as during inspection, that is, when each component area of the liquid crystal panel 60 is the above-mentioned predetermined transmittance, the wafer W is irradiated with light close to the desired illuminance. Thereby, light is irradiated upward from the mounting surface 40a of the stage 10. And, the illuminance of the light irradiated from a certain unit sensor area of the mounting surface 40a is measured by the illuminance sensor 32. Thereafter, the movement of the stage 10 caused by the X-direction moving unit 21 and the Y-direction moving unit 22 and the measurement of the illuminance caused by the illuminance sensor 32 are repeated. As a result, the illuminance of light from each unit sensor area is measured for all parts of the mounting surface 40a corresponding to at least the imaging element forming area of the wafer W. Based on the measurement result, the control unit 13 obtains the in-plane distribution of the illuminance of light irradiated via the mounting surface 40a.
接著,藉由控制部13決定液晶面板60的各元件區域的透光率。具體而言,藉由控制部13決定液晶面板60的各元件區域的透光率,以使所取得的光的照度的面內分布之面內均勻性的問題被消除或緩和,亦即使經由載置面40a照射的光的照度的面內分布成為面內均勻。Next, the control unit 13 determines the transmittance of each element region of the liquid crystal panel 60. Specifically, the control unit 13 determines the transmittance of each element region of the liquid crystal panel 60 so that the problem of in-plane uniformity of the in-plane distribution of the obtained light illumination is eliminated or alleviated, that is, the in-plane distribution of the illumination of the light irradiated through the mounting surface 40a becomes in-plane uniform.
也可以在液晶面板60的各元件區域的透光率變更為所決定出的值後,再次藉由照度感測器32進行測定等,取得經由載置面40a照射的光的照度的面內分布。並且,在取得結果沒有成為所欲結果的情況下,也可以根據取得結果來調整所決定出的液晶面板60的各元件區域的透光率。此等經由載置面40a照射的光的照度的面內分布之取得與液晶面板60的透光率的調整,也可以反覆直到得到所欲的上述面內分布為止。After the transmittance of each element region of the liquid crystal panel 60 changes to the determined value, the illumination sensor 32 may be used to perform measurement again to obtain the in-plane distribution of the illumination of the light irradiated through the mounting surface 40a. Furthermore, if the obtained result does not become the desired result, the determined transmittance of each element region of the liquid crystal panel 60 may be adjusted based on the obtained result. The acquisition of the in-plane distribution of the illumination of the light irradiated through the mounting surface 40a and the adjustment of the transmittance of the liquid crystal panel 60 may be repeated until the desired in-plane distribution is obtained.
[檢查處理的範例1] 接著,對使用針測機1對晶圓W進行檢查處理的一例加以說明。在下面的說明中,假設在一次檢查中會檢查一個攝影元件D。但是,也可以在使用針測機1的一次檢查中,一次檢查多個攝影元件D。另外,以下的檢查處理是在控制部13的控制下進行。 [Inspection Process Example 1] Next, an example of inspection processing of a wafer W using the probe tester 1 is described. In the following description, it is assumed that one imaging element D is inspected in one inspection. However, multiple imaging elements D may be inspected at one time in one inspection using the probe tester 1. In addition, the following inspection processing is performed under the control of the control unit 13.
例如,首先,晶圓W從裝載機3的FOUP中被取出並被搬送到收容室2內。並且,以形成在晶圓W上的攝影元件D的內面與台座10相對向且該晶圓W的內面與台座10抵接的方式,將該晶圓W載置在台座10的載置面40a上。For example, first, the wafer W is taken out of the FOUP of the loader 3 and transported into the storage chamber 2. Then, the wafer W is placed on the placement surface 40a of the pedestal 10 in such a manner that the inner surface of the imaging element D formed on the wafer W faces the pedestal 10 and the inner surface of the wafer W abuts against the pedestal 10.
接著,藉由X方向移動單元21等所構成之移動機構來使台座10移動,以使設置在台座10上方的探針11a與檢查對象的攝影元件D的電極E接觸。Next, the stage 10 is moved by a moving mechanism including the X-direction moving unit 21, etc., so that the probe 11a disposed above the stage 10 comes into contact with the electrode E of the imaging element D of the inspection object.
然後,從照射部50以既定條件進行光的照射。藉此,例如光源部52的所有LED會點亮,光從各LED射入到導光板51的側端面。射入的光在導光板51內部會朝向載置面40反射並擴散,從導光板51的與晶圓W相對向的對向面51a呈面狀射出。Then, light is irradiated from the irradiation unit 50 under predetermined conditions. Thus, for example, all LEDs of the light source unit 52 are turned on, and light is incident from each LED to the side surface of the light guide plate 51. The incident light is reflected and diffused toward the mounting surface 40 inside the light guide plate 51, and is emitted in a planar shape from the opposite surface 51a of the light guide plate 51 that is opposite to the wafer W.
從上述對向面51a呈面狀射出的光會通過在照度分布取得/穿透率決定處理已調整成決定出之透光率的液晶面板60,在頂板40擴散並同時穿透過該頂板40,射入至晶圓W,亦即射入至檢查對象的攝影元件D。The light emitted in a planar shape from the above-mentioned opposite surface 51a passes through the liquid crystal panel 60 which has been adjusted to the determined transmittance in the illumination distribution acquisition/transmittance determination processing, diffuses in the top plate 40 and simultaneously penetrates through the top plate 40, and is incident on the wafer W, that is, on the photographic element D of the inspection object.
在照射該光的同時,向探針11a進行檢查用訊號的輸入。藉此,進行攝影元件D的檢查。While the light is being irradiated, an inspection signal is input to the probe 11a. In this way, the imaging element D is inspected.
在上述檢查中,藉由未圖示的溫度測定機構來測定晶圓W的溫度,根據其結果來控制設在基台70之調溫部(未圖示),藉由將晶圓W的溫度調整成所欲值,來將攝影元件D的溫度調整成所欲值。 之後,反覆與上述相同的處理,直到所有攝影元件D的檢查完成為止。 In the above inspection, the temperature of the wafer W is measured by a temperature measuring mechanism (not shown), and the temperature adjustment unit (not shown) provided on the base 70 is controlled based on the result, and the temperature of the wafer W is adjusted to a desired value to adjust the temperature of the imaging element D to a desired value. Afterwards, the same processing as above is repeated until the inspection of all imaging elements D is completed.
[本實施形態的主要效果] 如上所述,在本實施形態中,針測機1係具有以與內面照射型的攝影元件D的內面相對向的形態來支撐晶圓W的台座10,台座10係具有:透明的載置面40a,係供載置晶圓W;以及照射部50,係配置在載置面40a的下方,會朝向該載置面40a所載置的晶圓W照射光。此外,照射部50係具有:導光板51,係具有中間隔著載置面40a而與晶圓W相對向的對象面51a;以及光源部52,係設置在導光板51的側方外側的區域,會朝向導光板51的側端面射出光。再者,導光板51會將從光源部52射出且從該導光板51的側端面射入的光從對向面51a朝向載置面40a呈面狀射出。並且,台座10係進一步具有會使從導光板51的對向面51a朝向載置面40a所載置的晶圓W的光穿透過的液晶面板60。此液晶面板60係構成為被劃分成多個元件區域,能夠針對每一個元件區域改變透光率。因此,在本實施形態中,取得來自載置面40a的光的照度的面內分布,根據取得結果,針對每一個元件區域調整液晶面板60中的透光率,藉此能夠使來自載置面40a的光的照度的面內分布成為面內均勻,具體而言,能夠使來自載置面40a的光的照度的面內分布以所欲照度成為面內均勻。亦即,根據本實施形態,在內面照射型的攝影元件D的檢查中使用側方入射型的照射部50的情況下,能夠向晶圓W照射面內均勻的面狀的光,具體而言,能夠以所欲強度向晶圓W照射面內均勻的面狀的光。在檢查形成在晶圓W上的攝影元件D時,如果以所欲強度向晶圓W照射面內均勻的面狀的光,則針對於各攝影元件D,能夠抑制光對該攝影元件D的照射強度從所欲強度偏移。其結果,能夠正確地進行各攝影元件D的檢查。 [Main effects of the present embodiment] As described above, in the present embodiment, the probe 1 has a pedestal 10 that supports the wafer W in a shape that is opposite to the inner surface of the internal illumination type imaging element D, and the pedestal 10 has: a transparent mounting surface 40a for mounting the wafer W; and an irradiation unit 50 that is arranged below the mounting surface 40a and irradiates light toward the wafer W mounted on the mounting surface 40a. In addition, the irradiation unit 50 has: a light guide plate 51 that has an object surface 51a that is opposite to the wafer W with the mounting surface 40a in between; and a light source unit 52 that is arranged in an area on the lateral outer side of the light guide plate 51 and emits light toward the side end surface of the light guide plate 51. Furthermore, the light guide plate 51 emits the light emitted from the light source unit 52 and incident from the side end surface of the light guide plate 51 in a planar manner from the opposite surface 51a toward the mounting surface 40a. In addition, the pedestal 10 further has a liquid crystal panel 60 that transmits the light from the opposite surface 51a of the light guide plate 51 toward the wafer W mounted on the mounting surface 40a. The liquid crystal panel 60 is structured to be divided into a plurality of element regions, and the transmittance can be changed for each element region. Therefore, in the present embodiment, the in-plane distribution of the illumination of the light from the mounting surface 40a is obtained, and based on the obtained result, the transmittance in the liquid crystal panel 60 is adjusted for each element region, thereby making the in-plane distribution of the illumination of the light from the mounting surface 40a uniform in the plane, specifically, making the in-plane distribution of the illumination of the light from the mounting surface 40a uniform in the plane at a desired illumination. That is, according to the present embodiment, when the side-incident type irradiation unit 50 is used in the inspection of the internal surface illumination type imaging element D, the wafer W can be irradiated with in-plane uniform planar light, specifically, the wafer W can be irradiated with in-plane uniform planar light at a desired intensity. When inspecting the imaging element D formed on the wafer W, if the wafer W is irradiated with uniform planar light at a desired intensity, the intensity of the light irradiating the imaging element D can be suppressed from deviating from the desired intensity for each imaging element D. As a result, each imaging element D can be inspected correctly.
另外,在本實施形態中,使用側方入射型的照射部50,照射部50的光源部52在俯視下不會與導光板51重疊。因此,即使在基台70上設置加熱器,光源部52(具體地說,光源部52所具有的LED)也難以受到加熱器產生的熱的影響。In addition, in the present embodiment, the side-incident type irradiation unit 50 is used, and the light source unit 52 of the irradiation unit 50 does not overlap with the light guide plate 51 in a plan view. Therefore, even if a heater is provided on the base 70, the light source unit 52 (specifically, the LED included in the light source unit 52) is unlikely to be affected by the heat generated by the heater.
進而,在本實施形態相關之針測器1的構成中,能夠藉由向光源部52供給的電力(具體而言是向光源部52的LED供給的電流)粗略地調整光對攝影元件D的照射強度,並藉由液晶面板60的透光率進行微調。因此,根據本實施形態,能夠以廣範圍(例如0.01 lx~10000 lx)及高分辨率(例如0.1%)來調整光對攝影元件D的照射強度。Furthermore, in the configuration of the probe 1 according to the present embodiment, the intensity of light irradiation on the imaging element D can be roughly adjusted by the power supplied to the light source unit 52 (specifically, the current supplied to the LED of the light source unit 52), and finely adjusted by the light transmittance of the liquid crystal panel 60. Therefore, according to the present embodiment, the intensity of light irradiation on the imaging element D can be adjusted in a wide range (e.g., 0.01 lx to 10000 lx) and with high resolution (e.g., 0.1%).
另外,在僅藉由向光源部52的LED供給的電流來調整光對攝影元件D的照射強度的情況下,原本就難以使來自載置面40a的光的照度的面內分布成為面內均勻,但為了能夠以廣範圍及高分辨率進行調整,需要多個電源。相對於此,在本實施形態相關之也利用上述液晶面板60的透光率的方法中,不會為了能夠以廣範圍及高分辨率調整光對攝影元件D的照射強度而需要多個電源,因此在成本方面具有優勢。In addition, when the intensity of light irradiation to the imaging element D is adjusted only by the current supplied to the LED of the light source unit 52, it is difficult to make the in-plane distribution of the illumination of the light from the mounting surface 40a uniform within the plane, and multiple power supplies are required to enable adjustment with a wide range and high resolution. In contrast, in the method related to the present embodiment that also utilizes the light transmittance of the above-mentioned liquid crystal panel 60, multiple power supplies are not required in order to enable adjustment of the intensity of light irradiation to the imaging element D with a wide range and high resolution, and thus there is an advantage in terms of cost.
[檢查處理的其他範例] 接著,對使用針測機1對晶圓W進行檢查處理的其他範例加以說明。此外,關於與前述檢查處理的範例1同樣之部分係省略其說明。另外,在下面的說明中,假設在一次檢查中會檢查一個攝影元件D。但是,也可以在使用針測機1的一次檢查中,一次檢查多個攝影元件D。另外,以下的檢查處理是在控制部13的控制下進行。 [Other examples of inspection processing] Next, other examples of inspection processing of wafer W using the probe tester 1 are described. In addition, the description of the same parts as the above-mentioned example 1 of the inspection processing is omitted. In addition, in the following description, it is assumed that one imaging element D is inspected in one inspection. However, it is also possible to inspect multiple imaging elements D at one time in one inspection using the probe tester 1. In addition, the following inspection processing is performed under the control of the control unit 13.
例如,與檢查處理的範例1同樣地,晶圓W係載置於台座10的載置面40a,之後,使探針11a與檢查對象的攝影元件D的電極E接觸。For example, similarly to Example 1 of the inspection process, the wafer W is mounted on the mounting surface 40a of the stage 10, and then the probe 11a is brought into contact with the electrode E of the imaging device D as the inspection object.
接著,與檢查處理的範例1同樣地,從照射部50以既定條件進行光的照射。藉此,光從導光板51中與晶圓W相對向的對向面51a面狀地射出。但是,與檢查處理的範例1不同,調整液晶面板60的透光率以使液晶面板60的多個元件區域中僅特定元件區域會使光通過。具體而言,僅將液晶面板60中與檢查對象的攝影元件D對應的元件區域調整為已在照度分布取得/穿透率決定處理中決定出的透光率,除此之外的元件區域的透光率則設為0%,亦即除此以外的元件區域設為遮光狀態。因此,從上述對向面51a面狀地射出的光之中會穿透過液晶面板60及頂板40的光僅是射入到液晶面板60中與檢查對象的攝影元件D對應的元件區域的光。因此,能夠僅從載置面40a中與檢查對象的攝影元件D對應的區域向晶圓W照射光。亦即,能夠僅對晶圓W中的檢查對象的攝影元件D局部地照射光。Next, similarly to Example 1 of the inspection process, light is irradiated from the irradiation unit 50 under predetermined conditions. Thereby, light is emitted in a planar manner from the opposite surface 51a of the light guide plate 51 that is opposite to the wafer W. However, unlike Example 1 of the inspection process, the transmittance of the liquid crystal panel 60 is adjusted so that only specific component areas among the multiple component areas of the liquid crystal panel 60 allow light to pass through. Specifically, only the component area corresponding to the photographic element D of the inspection object in the liquid crystal panel 60 is adjusted to the transmittance determined in the illumination distribution acquisition/transmittance determination process, and the transmittance of the other component areas is set to 0%, that is, the other component areas are set to a light-shielding state. Therefore, among the light emitted planarly from the above-mentioned facing surface 51a, the light that passes through the liquid crystal panel 60 and the top plate 40 is only the light that enters the element area corresponding to the inspection object imaging element D in the liquid crystal panel 60. Therefore, the light can be irradiated to the wafer W only from the area corresponding to the inspection object imaging element D in the mounting surface 40a. That is, the inspection object imaging element D in the wafer W can be partially irradiated with light.
在照射該光的同時,向探針11a進行檢查用訊號的輸入。藉此,進行攝影元件D的檢查。While the light is being irradiated, an inspection signal is input to the probe 11a. In this way, the imaging element D is inspected.
如上述,根據針測機1,便也能夠僅對晶圓W中的檢查對象的攝影元件D局部地照射光。As described above, according to the probe device 1, it is also possible to partially irradiate light only to the imaging element D of the inspection object in the wafer W.
[液晶面板的其他範例] 圖8係液晶面板之其他範例的局部放大剖面圖。 圖8的液晶面板60A與圖7的液晶面板60不同,在玻璃基板62與液晶層61之間具有濾光片基板(濾光片構件的一例)100,該濾光片基板100係以使相互不同波長穿透過的多個濾光片F1, F2, F3會與元件區域對應的形態來加以形成。例如,濾光片F1僅使紅色(R)的波長穿透過,濾光片F2僅使綠色(G)的波長穿透過,濾光片F3僅使藍色(B)的波長穿透過。 [Other examples of liquid crystal panels] FIG8 is a partially enlarged cross-sectional view of another example of a liquid crystal panel. The liquid crystal panel 60A of FIG8 is different from the liquid crystal panel 60 of FIG7. It has a filter substrate (an example of a filter component) 100 between the glass substrate 62 and the liquid crystal layer 61. The filter substrate 100 is formed in a form that allows a plurality of filters F1, F2, and F3 that allow different wavelengths to pass through to correspond to the element area. For example, the filter F1 only allows the red (R) wavelength to pass through, the filter F2 only allows the green (G) wavelength to pass through, and the filter F3 only allows the blue (B) wavelength to pass through.
藉由使用此液晶面板60A,能夠不使用射出波長相互不同的光的多個光源,而用單一光源將相互不同的多個波長的任一個光照射到攝影元件D。By using this liquid crystal panel 60A, it is possible to irradiate the imaging element D with any of a plurality of mutually different wavelengths of light using a single light source, instead of using a plurality of light sources that emit light of mutually different wavelengths.
(變形例) 圖9係顯示液晶面板60在台座內的位置之其他範例的圖。 在以上的範例中,在作為擴散板而作用的頂板40下方設置有液晶面板60。取而代之,如圖9所示,也可以在台座10A中,於擴散板110上方設置有液晶面板60。在此情況下,例如,液晶面板60的上面60a會成為供載置晶圓W的載置面。 但是,在作為擴散板而作用的頂板40下方設置液晶面板60,能夠更為減輕液晶面板60的元件區域間的間隙對照射到攝影元件D的光及檢查結果造成影響的情形。 (Variation) FIG. 9 is a diagram showing another example of the position of the liquid crystal panel 60 in the pedestal. In the above example, the liquid crystal panel 60 is provided below the top plate 40 that functions as a diffusion plate. Alternatively, as shown in FIG. 9 , the liquid crystal panel 60 may be provided above the diffusion plate 110 in the pedestal 10A. In this case, for example, the upper surface 60a of the liquid crystal panel 60 becomes a mounting surface for mounting the wafer W. However, by providing the liquid crystal panel 60 below the top plate 40 that functions as a diffusion plate, it is possible to further reduce the situation where the gap between the element areas of the liquid crystal panel 60 affects the light irradiated to the imaging element D and the inspection result.
另外,也可以自台座省略擴散板。In addition, the diffusion plate may be omitted from the base.
應認為本次所揭露之實施形態在所有方面皆為範例而非用來加以限制。上述實施形態在不脫離申請專利範圍、後述的附記項及其要旨的範圍內也能以各種形態來加以省略、置換、變更。例如,上述實施形態的構成要件可以任意加以組合。The embodiments disclosed herein are exemplary in all respects and are not intended to be limiting. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the patent application, the appended notes, and the gist thereof. For example, the constituent elements of the embodiments described above may be combined arbitrarily.
另外,本說明書所記載之效果僅為說明用或者為範例而非用來加以限制。亦即,本揭露相關之技術能夠與上述效果一起或者取代上述效果而達成本發明所屬技術領域中具有通常知識者從本說明書的記載能夠明白的其他效果。In addition, the effects described in this specification are for illustration or example only and are not intended to be limiting. That is, the technology related to this disclosure can achieve other effects that can be understood by a person of ordinary skill in the art to which this invention belongs, together with or in place of the above effects.
此外,以下構成也屬於本揭露的技術範圍。 (1)一種檢查裝置,係對檢查對象元件進行檢查; 該檢查對象元件係使光從內面射入之內面照射型的攝影元件,且形成在檢查對象體,該內面為與設有配線層之一側相反側之一面; 該檢查裝置係具備會以與該攝影元件之該內面相對向的形態來支撐該檢查對象體之載置台; 該載置台係具有: 透明的載置面,係供載置該檢查對象體;以及 照射部,係配置在該載置面的下方,會朝向該載置面所載置的該檢查對象體照射光; 該照射部係具有: 導光板,係具有中間隔著該載置面而與該檢查對象體相對向之對向面;以及 光源部,係設在該導光板之側方外側的區域,會朝向該導光板的側端面射出光; 該導光板會使從該光源部射出且從該導光板的側端面射入之光從該對向面朝向該載置面射出; 該載置台係進一步具有光學構件,該光學構件係會使從該導光板之該對向面朝向該載置面所載置的該檢查對象體之光穿透過; 該光學構件係構成為被劃分成多個區域且可針對每一個該區域改變透光率。 (2)如前述(1)之檢查裝置,其中該光學構件係液晶面板。 (3)如前述(2)之檢查裝置,其中該液晶面板係以對應於該區域之形態具有分別使不同波長穿透過的多個濾光片。 (4)如前述(1)至(3)中任一者之檢查裝置,其進一步具備控制部;該控制部係取得來自該載置面之光的照度之面內分布,根據取得結果來調整該光學構件的透光率。 (5)如前述(1)至(4)中任一者之檢查裝置,其進一步具備控制部;該控制部係以會使光僅穿透過該多個區域中的特定區域之方式來調整該光學構件的透光率。 (6)一種檢查方法,係對檢查對象元件進行檢查; 該檢查對象元件係使光從內面射入之內面照射型的攝影元件,且形成在檢查對象體,該內面為與設有配線層之一側相反側之一面; 該檢查方法係包含: 以使該攝影元件的該內面與透明的載置面相對向之形態將該檢查對象體載置在該載置面的工序; 使光朝向導光板的側端面射出,且使光從該導光板的與該檢查對象體相對向之對向面射出,穿透過構成為被劃分成多個區域且可針對每一個該區域改變透光率的光學構件後從該載置面射出的工序; 取得來自該載置面之光的照度之面內分布的工序;以及 根據取得結果來調整該光學構件的透光率的工序。 In addition, the following structures also belong to the technical scope of the present disclosure. (1) An inspection device for inspecting an inspection object element; The inspection object element is an internal illumination type imaging element that allows light to enter from the inner surface, and is formed on the inspection object, and the inner surface is a surface opposite to a side provided with a wiring layer; The inspection device is provided with a mounting table that supports the inspection object in a shape opposite to the inner surface of the imaging element; The mounting table has: A transparent mounting surface for mounting the inspection object; and An irradiation unit is arranged below the mounting surface and irradiates light toward the inspection object mounted on the mounting surface; The irradiation unit has: A light guide plate having an opposing surface that is opposite to the inspection object with the mounting surface in between; and The light source portion is disposed in an area outside the side of the light guide plate and emits light toward the side end surface of the light guide plate; The light guide plate causes the light emitted from the light source portion and incident from the side end surface of the light guide plate to be emitted from the opposite surface toward the mounting surface; The mounting table further has an optical component, which allows the light from the opposite surface of the light guide plate to pass through the inspection object mounted on the mounting surface; The optical component is configured to be divided into a plurality of regions and can change the transmittance for each of the regions. (2) The inspection device as described in (1) above, wherein the optical component is a liquid crystal panel. (3) The inspection device as described in (2) above, wherein the liquid crystal panel has a plurality of filters that allow different wavelengths to pass through in a shape corresponding to the region. (4) The inspection device as described in any one of (1) to (3) above further comprises a control unit; the control unit obtains the in-plane distribution of the illumination of the light from the mounting surface and adjusts the transmittance of the optical component according to the obtained result. (5) The inspection device as described in any one of (1) to (4) above further comprises a control unit; the control unit adjusts the transmittance of the optical component in a manner that causes light to pass through only a specific area among the multiple areas. (6) An inspection method for inspecting an inspection object element; The inspection object element is an internal illumination type photographic element that allows light to enter from the inner surface, and is formed on the inspection object, and the inner surface is a surface opposite to a side provided with a wiring layer; The inspection method includes: The process of placing the inspection object on a transparent mounting surface in a state in which the inner surface of the photographic element is opposite to the mounting surface; The process of emitting light toward the side end surface of a light guide plate, emitting light from the opposite surface of the light guide plate opposite to the inspection object, and emitting light from the mounting surface after passing through an optical component that is divided into a plurality of regions and can change the transmittance for each region; The process of obtaining the in-plane distribution of the illumination of the light from the mounting surface; and The process of adjusting the light transmittance of the optical component according to the obtained results.
1:針測機 10,10A:台座 40a:載置面 50:照射部 51:導光板 51a:對向面 52:光源部 60,60A:液晶面板 60a:上面 D:內面照射型攝影元件 W:晶圓 1: Probe tester 10,10A: Base 40a: Mounting surface 50: Illumination section 51: Light guide plate 51a: Opposite surface 52: Light source section 60,60A: Liquid crystal panel 60a: Top surface D: Internal illumination type imaging element W: Wafer
圖1係概略顯示形成有內面照射型攝影元件之作為檢查對象體的基板之構成的俯視圖。 圖2係概略顯示內面照射型攝影元件之構成的剖面圖。 圖3係顯示作為本實施形態相關之檢查裝置的針測機之構成之概略的立體圖。 圖4係顯示作為本實施形態相關之檢查裝置的針測機之構成之概略的前視圖。 圖5係顯示收容室之內部構造之概略的立體圖。 圖6係概略顯示台座之構成的剖面圖。 圖7係液晶面板的局部放大剖面圖。 圖8係液晶面板之其他範例的局部放大剖面圖。 圖9係顯示液晶面板在台座內的位置之其他範例的圖。 FIG. 1 is a top view schematically showing the structure of a substrate as an inspection object formed with an internally illuminated imaging element. FIG. 2 is a cross-sectional view schematically showing the structure of the internally illuminated imaging element. FIG. 3 is a perspective view schematically showing the structure of a needle tester as an inspection device related to the present embodiment. FIG. 4 is a front view schematically showing the structure of a needle tester as an inspection device related to the present embodiment. FIG. 5 is a perspective view schematically showing the internal structure of a storage chamber. FIG. 6 is a cross-sectional view schematically showing the structure of a base. FIG. 7 is a partially enlarged cross-sectional view of a liquid crystal panel. FIG. 8 is a partially enlarged cross-sectional view of another example of a liquid crystal panel. FIG. 9 is a view showing another example of the position of a liquid crystal panel in a base.
10:台座 10: Pedestal
40:頂板 40: Top plate
40a:載置面 40a: Loading surface
50:照射部 50: Irradiation section
51:導光板 51: Light guide plate
51a:對向面 51a: Opposite side
52:光源部 52: Light source
53:散熱板 53: Heat sink
60:液晶面板 60: LCD panel
70:基台 70: Base
W:晶圓 W: Wafer
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JPH09250908A (en) * | 1996-03-14 | 1997-09-22 | Hitachi Ltd | Inspection device |
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JP2009170730A (en) * | 2008-01-17 | 2009-07-30 | Fujifilm Corp | Inspecting apparatus for back irradiating type solid-state imaging device |
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