TW202411468A - Conductive particles, production method therefor, and conductive member - Google Patents

Conductive particles, production method therefor, and conductive member Download PDF

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TW202411468A
TW202411468A TW112131262A TW112131262A TW202411468A TW 202411468 A TW202411468 A TW 202411468A TW 112131262 A TW112131262 A TW 112131262A TW 112131262 A TW112131262 A TW 112131262A TW 202411468 A TW202411468 A TW 202411468A
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conductive
conductive particles
particles
protrusions
protrusion
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大畑圭代
久持昭紘
稲葉裕之
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日商日本化學工業股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber

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  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

The present invention provides conductive particles which have a small connection resistance value and have excellent insulation performance, and with which short circuit is inhibited, and thus exhibit excellent connection reliability. The conductive particles each have a core material particle, and a conductive layer having a plurality of projection parts on the surface of the core material particle. The height variation of the projection parts is 0.01-0.25.

Description

導電性粒子、其製造方法及導電性材料Conductive particles, method for producing the same, and conductive material

本發明是有關於一種導電性粒子、其製造方法及包含所述導電性粒子的導電性材料。The present invention relates to a conductive particle, a method for producing the conductive particle, and a conductive material containing the conductive particle.

作為用作各向異性導電膜或各向異性導電膏等各向異性導電材料的導電性材料的導電性粒子,一般已知有一種在芯材粒子的表面形成有包含金屬的導電層的導電性粒子。伴隨近年來的電子設備類的極小化或精細化,在微小間距的電極端子間的連接中,藉由導電性粒子的導電層進行電極或配線間的電性連接。As conductive particles used as conductive materials for anisotropic conductive materials such as anisotropic conductive films or anisotropic conductive pastes, there is generally known a conductive particle having a conductive layer containing metal formed on the surface of a core particle. With the miniaturization or refinement of electronic devices in recent years, in the connection between electrode terminals with a fine pitch, the conductive layer of the conductive particles is used to make electrical connections between electrodes or wirings.

作為該導電性粒子的導電層,經常使用藉由利用無電解電鍍法的鎳等的金屬電鍍而在芯材粒子的表面製作的皮膜,為了顯現出目標特性而下了各種工夫。作為其一例,在專利文獻1中,記載了在導電性粒子的導電層形成多個多稜柱狀的突起部,藉此在將導電性粒子用於電極間的電性連接的情況下,可將導電性粒子有效率地配置於電極上,可抑制導電性粒子對電極的損傷。另外,在專利文獻2中提出了如下導電性粒子,所述導電性粒子在導電性粒子的導電層形成非多稜柱狀的多個多面體狀的突起部,藉此即便在低壓下將電極間加以連接,亦可在連接後有效率地降低連接電阻。進而,在專利文獻3中記載了如下導電性粒子,所述導電性粒子在導電性粒子的導電層具有多個突起部,並形成該多個突起部的至少一部分為板狀的突起部,藉此在將電極間加以連接時導電性粒子不易過度流動,從而可提高導通可靠性與絕緣可靠性。As the conductive layer of the conductive particles, a film formed on the surface of the core particles by electroplating a metal such as nickel using an electroless plating method is often used, and various efforts have been made to show the target characteristics. As an example, in Patent Document 1, it is described that a plurality of multi-prismatic protrusions are formed on the conductive layer of the conductive particles, whereby when the conductive particles are used for electrical connection between electrodes, the conductive particles can be efficiently arranged on the electrodes, and damage to the electrodes by the conductive particles can be suppressed. In addition, Patent Document 2 proposes a conductive particle having a plurality of non-polygonal protrusions formed on the conductive layer of the conductive particle, thereby effectively reducing the connection resistance after the connection even when the electrodes are connected at a low voltage. Furthermore, Patent Document 3 describes a conductive particle having a plurality of protrusions on the conductive layer of the conductive particle, and forming at least a portion of the plurality of protrusions as plate-shaped protrusions, thereby preventing the conductive particle from excessively flowing when the electrodes are connected, thereby improving the conduction reliability and insulation reliability.

所述專利文獻1至專利文獻3均嘗試藉由根據目標效果來設計形成於導電層的突起部的形狀而解決課題。正在研究藉由如此使突起部的形狀不同而被賦予所期望的特性的導電性粒子。 [現有技術文獻] [專利文獻] Patent Documents 1 to 3 attempt to solve the problem by designing the shape of the protrusion formed on the conductive layer according to the target effect. Conductive particles that are given desired properties by making the shape of the protrusion different in this way are being studied. [Prior Art Document] [Patent Document]

[專利文獻1]日本專利特開2015-149277號公報 [專利文獻2]日本專利特開2016-119302號公報 [專利文獻3]日本專利特開2017-212033號公報 [Patent Document 1] Japanese Patent Publication No. 2015-149277 [Patent Document 2] Japanese Patent Publication No. 2016-119302 [Patent Document 3] Japanese Patent Publication No. 2017-212033

[發明所欲解決之課題] 藉由使用在芯材粒子的表面形成了具有突起部的導電層的導電性粒子,導電性粒子彼此的接觸效率提高,能夠削減導電性粒子的量。另外,在電極面存在氧化皮膜的情況下,藉由利用突起部破壞氧化皮膜,能夠導通,從而可抑制電阻。 藉由如此在導電層設置突起部,在電極間的連接時能夠降低連接電阻或提高導通可靠性。 [Problems to be solved by the invention] By using conductive particles having a conductive layer with protrusions formed on the surface of core particles, the contact efficiency between conductive particles is improved, and the amount of conductive particles can be reduced. In addition, when there is an oxide film on the electrode surface, the oxide film can be destroyed by the protrusions to achieve conduction, thereby suppressing resistance. By providing protrusions on the conductive layer in this way, the connection resistance can be reduced or the conduction reliability can be improved when connecting between electrodes.

然而,伴隨電子設備類的進一步的極小化及精細化的要求,不僅要求進一步降低先前的具有突起部的導電性粒子的連接電阻,亦要求防止絕緣部位處的短路。However, with the demand for further miniaturization and refinement of electronic devices, it is required not only to further reduce the connection resistance of conventional conductive particles having protrusions, but also to prevent short circuits at insulating portions.

因此,本發明的目的在於提供一種連接電阻值小且絕緣性優異,短路得到了抑制的連接可靠性優異的導電性粒子。另外,本發明的目的在於提供一種連接電阻值小且絕緣性優異的、短路得到了抑制的連接可靠性優異的導電性粒子的製造方法。 [解決課題之手段] Therefore, the object of the present invention is to provide a conductive particle with a small connection resistance value, excellent insulation, and excellent connection reliability with short circuit suppressed. In addition, the object of the present invention is to provide a method for manufacturing a conductive particle with a small connection resistance value, excellent insulation, and excellent connection reliability with short circuit suppressed. [Means for solving the problem]

為了解決所述課題,本發明者等人對導電性粒子所具有的突起部進行了努力研究,結果發現,將突起部的高度的偏差控制為一定範圍內的導電性粒子的連接電阻小且短路得到抑制,從而完成了本發明。In order to solve the above-mentioned problem, the inventors of the present invention have conducted intensive research on the protrusions of the conductive particles and found that by controlling the deviation of the height of the protrusions within a certain range, the connection resistance of the conductive particles is small and short circuits are suppressed, thereby completing the present invention.

即,本發明提供一種導電性粒子,包括芯材粒子、以及在所述芯材粒子的表面的具有多個突起部的導電層,所述突起部的高度的偏差為0.01以上且0.25以下。That is, the present invention provides a conductive particle including a core particle and a conductive layer having a plurality of protrusions on a surface of the core particle, wherein a variation in height of the protrusions is 0.01 or more and 0.25 or less.

另外,本發明提供一種導電性粒子的製造方法, 所述導電性粒子的製造方法具有如下步驟: 在芯材粒子的表面形成導電層; 在所述導電層形成自表面突出的突起部;以及 使所述突起部的高度平均化。 [發明的效果] In addition, the present invention provides a method for producing conductive particles, the method comprising the following steps: forming a conductive layer on the surface of a core particle; forming a protrusion protruding from the surface of the conductive layer; and averaging the height of the protrusion. [Effect of the invention]

根據本發明,提供一種由於連接電阻值小且絕緣性優異,因此短路得到了抑制的連接可靠性優異的導電性粒子。另外,根據本發明,提供一種由於連接電阻值小且絕緣性優異,因此短路得到了抑制的連接可靠性優異的導電性粒子的製造方法。According to the present invention, a conductive particle having a small connection resistance and excellent insulation, thereby suppressing short circuits and having excellent connection reliability is provided. In addition, according to the present invention, a method for manufacturing a conductive particle having a small connection resistance and excellent insulation, thereby suppressing short circuits and having excellent connection reliability is provided.

以下,基於本發明的較佳的實施形態對本發明進行說明。本發明的導電性粒子(以下,亦記述為「本導電性粒子」)中,包括芯材粒子、以及在所述芯材粒子的表面的具有多個突起部的導電層,所述突起部的高度的偏差為0.01以上且0.25以下。 可認為若導電性粒子所具有的突起部的高度的偏差大,則導電性粒子與電極的接觸會變得不均勻,可認為連接電阻會變大。另外,若突起部的高度的偏差大,則有時會因預期外的導通而產生短路。 可認為本導電性粒子的突起部的高度的偏差被控制為一定範圍內,其結果,連接電阻小,短路得到抑制,連接可靠性提高。 The present invention is described below based on the preferred embodiment of the present invention. The conductive particles of the present invention (hereinafter also described as "the present conductive particles") include core particles and a conductive layer having a plurality of protrusions on the surface of the core particles, wherein the deviation of the height of the protrusions is greater than 0.01 and less than 0.25. It is believed that if the deviation of the height of the protrusions of the conductive particles is large, the contact between the conductive particles and the electrode will become uneven, and the connection resistance will be greater. In addition, if the deviation of the height of the protrusions is large, a short circuit may sometimes occur due to unexpected conduction. It is believed that the deviation of the height of the protrusions of the present conductive particles is controlled within a certain range, and as a result, the connection resistance is small, the short circuit is suppressed, and the connection reliability is improved.

關於本導電性粒子所具有的芯材粒子(以下,亦記述為「本芯材粒子」),只要是粒子狀即可,材質可為無機物亦可為有機物。作為無機物,可列舉金、銀、銅、鎳、鈀、焊錫等金屬粒子、該些金屬的合金、玻璃、陶瓷、二氧化矽、金屬或非金屬的氧化物或其含水物、鋁矽酸鹽等金屬矽酸鹽、金屬碳化物、金屬氮化物、金屬碳酸鹽、金屬硫酸鹽、金屬磷酸鹽、金屬硫化物、金屬酸鹽、金屬鹵化物及碳等。 另一方面,作為有機物,例如可列舉天然纖維、天然樹脂、聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯、聚丁烯、聚醯胺、聚丙烯酸酯、聚丙烯腈、聚縮醛、離子聚合物、聚酯等熱塑性樹脂、醇酸樹脂、酚樹脂、脲樹脂、苯並胍胺樹脂、三聚氰胺樹脂、二甲苯樹脂、矽酮樹脂、環氧樹脂、鄰苯二甲酸二烯丙酯樹脂等熱硬化性樹脂。該些可單獨使用,亦可組合使用兩種以上。 The core particles of the conductive particles (hereinafter also referred to as "the core particles") may be inorganic or organic as long as they are in particle form. Examples of inorganic materials include metal particles such as gold, silver, copper, nickel, palladium, solder, alloys of these metals, glass, ceramics, silicon dioxide, metal or non-metal oxides or their hydrates, metal silicates such as aluminosilicate, metal carbides, metal nitrides, metal carbonates, metal sulfates, metal phosphates, metal sulfides, metal acids, metal halides, and carbon. On the other hand, examples of organic materials include natural fibers, natural resins, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polybutene, polyamide, polyacrylate, polyacrylonitrile, polyacetal, ionomer, polyester and other thermoplastic resins, alkyd resins, phenol resins, urea resins, benzoguanamine resins, melamine resins, xylene resins, silicone resins, epoxy resins, diallyl phthalate resins and other thermosetting resins. These may be used alone or in combination of two or more.

本芯材粒子的材質可為所述無機物及有機物中的任一種,亦可為無機物及有機物此兩者。在芯材粒子包括包含無機物及有機物此兩者的材質的情況下,作為芯材粒子中的無機物及有機物的存在形態,例如可列舉包括包含無機物的芯及包含被覆該芯的表面的有機物的殼的形態、或者包括包含有機物的芯及包含被覆該芯的表面的無機物的殼的形態等芯殼型的結構等。除該些外,亦可列舉在一個芯材粒子中,無機物與有機物混合存在的結構、或者隨機融合的混合型的結構等。The material of the core particles may be any one of the inorganic and organic materials, or both. When the core particles include materials including both inorganic and organic materials, the inorganic and organic materials in the core particles may include, for example, a core-shell structure including a core including an inorganic material and a shell including an organic material covering the surface of the core, or a core including an organic material and a shell including an inorganic material covering the surface of the core. In addition to these, a structure in which inorganic and organic materials coexist in one core particle, or a mixed structure of random fusion, may also be included.

本芯材粒子較佳為包括包含有機物的材質,更佳為包括包含無機物及有機物此兩者的材質。在包括包含無機物及有機物此兩者的材質的情況下,所述無機物較佳為玻璃、陶瓷、二氧化矽、金屬或非金屬的氧化物或其含水物、鋁矽酸鹽等金屬矽酸鹽、金屬碳化物、金屬氮化物、金屬碳酸鹽、金屬硫酸鹽、金屬磷酸鹽、金屬硫化物、金屬酸鹽、金屬鹵化物及碳。另外,所述有機物較佳為天然纖維、天然樹脂、聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯、聚丁烯、聚醯胺、聚丙烯酸酯、聚丙烯腈、聚縮醛、離子聚合物、聚酯等熱塑性樹脂。藉由使用包含此種材質的芯材,可提高粒子彼此的分散穩定性,另外,在電子電路的電性連接時,可顯現出適度的彈性而提高導通。The core particles are preferably made of an organic material, and more preferably a material comprising both an inorganic material and an organic material. In the case of a material comprising both an inorganic material and an organic material, the inorganic material is preferably glass, ceramic, silicon dioxide, metal or non-metal oxides or their hydrates, metal silicates such as aluminum silicate, metal carbides, metal nitrides, metal carbonates, metal sulfates, metal phosphates, metal sulfides, metal acids, metal halides, and carbon. In addition, the organic material is preferably a thermoplastic resin such as natural fiber, natural resin, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polybutylene, polyamide, polyacrylate, polyacrylonitrile, polyacetal, ionomer, polyester, etc. By using a core material containing such a material, the dispersion stability of the particles can be improved. In addition, when the electronic circuit is electrically connected, appropriate elasticity can be exhibited to improve conduction.

在作為本芯材粒子而包括包含有機物的材質的情況下,就容易維持芯材粒子的形狀或在形成金屬皮膜的步驟中容易維持芯材粒子的形狀的方面而言,所述有機物較佳為不具有玻璃轉移溫度或玻璃轉移溫度超過100℃的有機物。玻璃轉移溫度例如可作為藉由示差掃描熱量測定(以下,亦記述為「DSC(Differential Scanning Calorimetry)」)而獲得的DSC曲線的基線移位部分中的原基線與拐點的切線的交點來求出。When a material containing an organic substance is included as the core particle, the organic substance is preferably an organic substance that does not have a glass transition temperature or has a glass transition temperature exceeding 100° C., from the perspective of easily maintaining the shape of the core particle or easily maintaining the shape of the core particle in the step of forming a metal film. The glass transition temperature can be obtained, for example, as the intersection of the original baseline and the tangent line of the inflection point in the baseline shift portion of the DSC curve obtained by differential scanning calorimetry (hereinafter also described as "DSC (Differential Scanning Calorimetry)").

在有機物為高度地交聯的樹脂時,有時即便利用所述方法嘗試玻璃轉移溫度的測定直至200℃,亦幾乎觀測不到基線移位。在本說明書中,亦將此種有機物稱為不具有玻璃轉移溫度的有機物。本芯材粒子亦可將不具有此種玻璃轉移溫度的有機物用作芯材粒子的材質。不具有玻璃轉移溫度的有機物可與所述例示出的構成熱塑性樹脂或熱硬化性樹脂的單量體和交聯性的單量體進行共聚而獲得。作為交聯性的單量體,可列舉四亞甲基二(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、環氧乙烷二(甲基)丙烯酸酯、四環氧乙烷(甲基)丙烯酸酯、1,6-己烷二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷二(甲基)丙烯酸酯、四羥甲基甲烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、四羥甲基丙烷四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、甘油二(甲基)丙烯酸酯、甘油三-二(甲基)丙烯酸酯等多官能(甲基)丙烯酸酯、二乙烯基苯、二乙烯基甲苯等多官能乙烯基系單量體、乙烯基三甲氧基矽烷、三甲氧基甲矽烷基苯乙烯、γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷等含矽烷系的單量體、三烯丙基異氰脲酸酯、鄰苯二甲酸二烯丙酯、二烯丙基丙烯醯胺、二烯丙基醚等單量體。特別是在玻璃覆晶(Chip on Glass,COG)領域中,就此種高度地交聯的樹脂為硬質的觀點而言,較佳為用作芯材粒子的材質。When the organic substance is a highly cross-linked resin, even if the glass transition temperature is measured up to 200°C using the above method, there is sometimes little baseline shift observed. In this specification, such an organic substance is also referred to as an organic substance without a glass transition temperature. The core particles of the present invention can also use an organic substance without such a glass transition temperature as a material for the core particles. The organic substance without a glass transition temperature can be obtained by copolymerizing the monomers and cross-linking monomers constituting the thermoplastic resin or the thermosetting resin exemplified above. Examples of the crosslinking monomer include tetramethylene di(meth)acrylate, ethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethylene oxide di(meth)acrylate, tetraethylene oxide (meth)acrylate, 1,6-hexane di(meth)acrylate, neopentyl glycol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, trihydroxymethylpropane tri(meth)acrylate, tetrahydroxymethylmethane di(meth)acrylate, tetrahydroxymethylmethane tri(meth)acrylate, tetrahydroxymethyl Methane tetra(meth)acrylate, tetrahydroxymethylpropane tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, glycerol di(meth)acrylate, glycerol tri-di(meth)acrylate and other multifunctional (meth)acrylates, divinylbenzene, divinyltoluene and other multifunctional vinyl monomers, vinyl trimethoxysilane, trimethoxysilylstyrene, γ-(meth)acryloxypropyl trimethoxysilane and other silane-containing monomers, triallyl isocyanurate, diallyl phthalate, diallyl acrylamide, diallyl ether and other monomers. In particular, in the field of chip on glass (COG), such highly cross-linked resins are preferably used as materials for core particles from the viewpoint of being hard.

本芯材粒子的形狀可為不定形,亦可為球狀、纖維狀、中空狀、板狀或針狀,通常為球狀。本芯材粒子可在其表面具有多個突起。就填充性優異、容易被覆金屬的觀點而言,本芯材粒子的形狀較佳為球狀。The shape of the core particles can be amorphous, spherical, fibrous, hollow, plate-like or needle-like, and is usually spherical. The core particles can have a plurality of protrusions on their surface. From the perspective of excellent filling properties and easy metal coating, the shape of the core particles is preferably spherical.

本導電性粒子在所述本芯材粒子的表面具有導電層,所述導電層具有多個突起部。 本導電性粒子所具有的導電層包含具有導電性的金屬。作為構成導電層的金屬,例如除可列舉金、鉑、銀、銅、鐵、鋅、鎳、錫、鉛、銻、鉍、鈷、銦、鈦、鍺、鋁、鉻、鈀、鎢、鉬、鈣、鎂、銠、鈉、銥、鈹、釕、鉀、鎘、鋨、鋰、銣、鎵、鉈、鉭、銫、釷、鍶、釙、鋯、鋇、錳等金屬或該些的合金外,亦可列舉銦錫氧化物(Indium Tin Oxide,ITO)、焊錫等金屬化合物等。其中,金、銀、銅、鎳、鈀、銠或焊錫由於電阻少而較佳,尤其更佳為鎳、金、鈀、鎳合金、金合金及鈀合金。金屬可為一種,亦可組合使用兩種以上。 The conductive particles of the present invention have a conductive layer on the surface of the core particles, and the conductive layer has a plurality of protrusions. The conductive layer of the conductive particles of the present invention contains a conductive metal. Examples of the metal constituting the conductive layer include gold, platinum, silver, copper, iron, zinc, nickel, tin, lead, antimony, bismuth, cobalt, indium, titanium, germanium, aluminum, chromium, palladium, tungsten, molybdenum, calcium, magnesium, rhodium, sodium, iridium, curium, ruthenium, potassium, cadmium, nirconium, lithium, bismuth, gallium, molybdenum, cesium, niobium, strontium, proton, zirconium, barium, and manganese, or alloys thereof, and metal compounds such as indium tin oxide (ITO) and solder. Among them, gold, silver, copper, nickel, palladium, rhodium or solder is preferred due to its low resistance, and nickel, gold, palladium, nickel alloy, gold alloy and palladium alloy are particularly preferred. The metal may be one or more types in combination.

本導電性粒子所具有的導電層可為單層結構,亦可為包含多層的積層結構。在為包含多層的積層結構的情況下,最表層較佳為包含選自由鎳、金、銀、銅、鈀所組成的群組中的至少一種,較佳為鎳、金、銀、銅、鈀以及該些的合金。在合金的情況下,較佳為鎳、金、銀、銅、或鈀與磷的合金即鎳合金、金合金、銀合金、銅合金及鈀合金,更佳為鎳-磷合金、鈀-磷合金。導電層的最外層更佳為在後述的製造方法中,利用無電解法形成的無電解鍍鎳-磷層。The conductive layer of the conductive particles may be a single-layer structure or a multi-layered structure. In the case of a multi-layered structure, the outermost layer preferably comprises at least one selected from the group consisting of nickel, gold, silver, copper, and palladium, preferably nickel, gold, silver, copper, palladium, and alloys thereof. In the case of alloys, nickel, gold, silver, copper, or an alloy of palladium and phosphorus, i.e., nickel alloy, gold alloy, silver alloy, copper alloy, and palladium alloy, are preferably used, and nickel-phosphorus alloy and palladium-phosphorus alloy are more preferably used. The outermost layer of the conductive layer is more preferably an electroless nickel-phosphorus layer formed by an electroless method in the manufacturing method described below.

另外,本導電性粒子所具有的導電層可被覆本芯材粒子的整個表面,亦可僅被覆其一部分。在僅被覆本芯材粒子的表面的一部分的情況下,被覆部位可連續,亦可例如呈島狀不連續地被覆。The conductive layer of the conductive particles may cover the entire surface of the core particles or only a portion thereof. When only a portion of the surface of the core particles is covered, the covered portion may be continuous or may be discontinuous, for example, in the form of islands.

就所獲得的導電性粒子的電特性的觀點而言,本導電性粒子的導電層的厚度較佳為0.1 nm以上且2,000 nm以下,更佳為1 nm以上且1,500 nm以下。再者,導電層所具有的突起部的高度不包含於此處所述的導電層的厚度中。關於導電層的厚度,可將作為測定對象的粒子切斷成兩個,並利用掃描型電子顯微鏡(Scanning Electron Microscope,SEM)對其切口的剖面進行觀察來測定,導電層的厚度較佳為所述範圍內。From the viewpoint of the electrical properties of the obtained conductive particles, the thickness of the conductive layer of the conductive particles is preferably 0.1 nm or more and 2,000 nm or less, and more preferably 1 nm or more and 1,500 nm or less. The height of the protrusions of the conductive layer is not included in the thickness of the conductive layer described herein. The thickness of the conductive layer can be measured by cutting the particle to be measured into two and observing the cross section of the cut using a scanning electron microscope (SEM). The thickness of the conductive layer is preferably within the above range.

本導電性粒子的導電層所具有的突起部(以下,亦記述為「本突起部」)的高度的偏差為0.01以上且0.25以下。再者,所謂高度的偏差,是突起部的高度的標準偏差除以突起部的高度的平均值而得的值,由下述式(1)表示。高度的標準偏差可藉由下述式(2)求出,高度的平均值是利用下述式(3)求出的突起部的高度的算術平均值。藉由該偏差的值為所述範圍內,導電性粒子與電極的接觸變得更均勻,從而提高連接穩定性。The deviation of the height of the protrusions (hereinafter also referred to as "the protrusions") possessed by the conductive layer of the present conductive particles is greater than 0.01 and less than 0.25. Furthermore, the so-called height deviation is a value obtained by dividing the standard deviation of the height of the protrusions by the average value of the height of the protrusions, and is represented by the following formula (1). The standard deviation of the height can be calculated by the following formula (2), and the average value of the height is the arithmetic mean of the heights of the protrusions calculated using the following formula (3). By making the value of the deviation within the above range, the contact between the conductive particles and the electrode becomes more uniform, thereby improving the connection stability.

本突起部的高度的偏差更佳為0.05以上且0.20以下。 突起部的高度是指在對導電性粒子的剖面進行SEM觀察時導電性粒子為球狀的情況下,自突起頭頂部分的最高點至朝向導電性粒子的中心方向碰觸到突起的基部的點為止的最短距離。對於藉由SEM觀察而觀察到的20個不同的導電性粒子,可藉由對各導電性粒子的全部突起部的高度進行測定,並代入至所述各式中而求出突起部的高度的偏差。再者,在突起部具有多個頂點的情況下,將最高的頂點設為該突起部的高度。 The deviation of the height of the protrusion is preferably greater than 0.05 and less than 0.20. The height of the protrusion refers to the shortest distance from the highest point of the top of the protrusion to the point where the base of the protrusion touches the center of the conductive particle when the cross section of the conductive particle is spherical when SEM observation is performed on the cross section of the conductive particle. For 20 different conductive particles observed by SEM observation, the height of all protrusions of each conductive particle can be measured and substituted into the above formulas to obtain the deviation of the height of the protrusion. Furthermore, when the protrusion has multiple vertices, the highest vertex is set as the height of the protrusion.

本導電性粒子所具有的突起部的高度的平均值較佳為20 nm以上且1,000 nm以下,更佳為50 nm以上且800 nm以下。突起的數量亦取決於導電性粒子的粒徑,但每一個導電性粒子較佳為1個以上且20,000個以下,進而佳為5個以上且5,000個以下。 另外,突起部的基部的長度較佳為5 nm以上且1,000 nm以下,進而佳為10 nm以上且800 nm以下。 The average height of the protrusions of the conductive particles is preferably 20 nm or more and 1,000 nm or less, more preferably 50 nm or more and 800 nm or less. The number of protrusions also depends on the particle size of the conductive particles, but the number of protrusions per conductive particle is preferably 1 or more and 20,000 or less, and more preferably 5 or more and 5,000 or less. In addition, the length of the base of the protrusion is preferably 5 nm or more and 1,000 nm or less, and more preferably 10 nm or more and 800 nm or less.

關於突起部的高度的平均值,與所述同樣地求出突起部的高度,並藉由所述式(3)而求出。 突起部的基部的平均長度是指圖1的(a)及圖1的(b)中形成有突起部的部位的沿著導電層下層的表面6的長度。突起部的基部長度是針對藉由SEM觀察而觀察到的20個不同的導電性粒子,對各導電性粒子的全部突起部的基部的長度進行測定而得的值的算術平均值。 The average value of the height of the protrusions is obtained by calculating the height of the protrusions in the same manner as described above and by using the above formula (3). The average length of the base of the protrusions refers to the length along the surface 6 of the lower layer of the conductive layer at the portion where the protrusions are formed in FIG. 1 (a) and FIG. 1 (b). The base length of the protrusions is the arithmetic average of the values obtained by measuring the length of the base of all protrusions of each conductive particle for 20 different conductive particles observed by SEM observation.

就導電性粒子與電極的接觸變得更均勻的觀點而言,本突起部的頭頂部分的形狀較佳為大致平面狀。此處,所謂大致平面狀,包含包括完全的平面及具有後述的曲率半徑的曲面的面。例如,相對於圖1的(a)所示的完全的平面部5,圖1的(b)所示的具有後述曲率半徑的範圍內的曲面的平面部5在本說明書中亦包含於大致平面狀的概念中。From the viewpoint of making the contact between the conductive particles and the electrode more uniform, the shape of the top portion of the protrusion is preferably roughly planar. Here, the so-called roughly planar includes a completely flat surface and a curved surface having a curvature radius described later. For example, with respect to the completely flat surface portion 5 shown in FIG. 1 (a), the flat surface portion 5 having a curved surface within the range of the curvature radius described later shown in FIG. 1 (b) is also included in the concept of roughly planar in this specification.

在本突起部的頭頂部分為大致平面狀的情況下,頭頂部分的長度較佳為10 nm以上且500 nm以下,進而佳為20 nm以上且400 nm以下。大致平面狀的頭頂部分的長度是對導電性粒子的剖面進行SEM觀察,在突起部的剖面中將頭頂部分為大致平面狀的頭頂部分的兩端連結的最短距離。例如,在圖1的(a)及圖1的(b)中,將頭頂部分為大致平面狀的平面部5的端5a與端5b連結的直線的長度為頭頂部分的長度。關於大致平面狀的本突起部的頭頂部分的長度,設為就藉由SEM觀察而觀察到的20個不同的導電性粒子的剖面而言,對各導電性粒子的全部突起部的剖面的頭頂部分的長度進行測定而得的值的算術平均值。When the top portion of the protrusion is roughly planar, the length of the top portion is preferably 10 nm or more and 500 nm or less, and more preferably 20 nm or more and 400 nm or less. The length of the roughly planar top portion is the shortest distance connecting the two ends of the roughly planar top portion in the cross section of the protrusion when the cross section of the conductive particle is observed by SEM. For example, in FIG. 1 (a) and FIG. 1 (b), the length of the straight line connecting the end 5a and the end 5b of the planar portion 5 of the roughly planar top portion is the length of the top portion. The length of the top portion of the substantially planar protrusion is the arithmetic mean of the values obtained by measuring the length of the top portion of the cross section of all protrusions of each conductive particle in cross sections of 20 different conductive particles observed by SEM observation.

本突起部的數量亦取決於本導電性粒子的粒徑,但就導電性粒子的導電性的觀點而言,每一個本導電性粒子中,平均較佳為2個以上且20,000個以下,進而佳為5個以上且5,000個以下。再者,突起的數量是針對藉由SEM觀察而觀察到的20個不同的導電性粒子進行測定而得的值的算術平均值。The number of protrusions also depends on the particle size of the conductive particles, but from the perspective of the conductivity of the conductive particles, the number of protrusions per conductive particle is preferably 2 or more and 20,000 or less, and more preferably 5 or more and 5,000 or less. The number of protrusions is the arithmetic mean of the values measured for 20 different conductive particles observed by SEM observation.

當在本突起部的頭頂部分為大致平面狀的情況下將頭頂部分的曲率半徑設為Ra,將形成有本突起部的部位的導電層的下層的表面6的曲率半徑設為Rb時,Ra相對於Rb的比率(Ra/Rb)較佳為0.15以上且1.20以下、特別是0.20以上且1.00以下。藉由突起部的頭頂部分具有滿足所述範圍的曲率半徑,本導電性粒子與電極的接觸變得更均勻,從而提高連接穩定性。再者,Ra可設為例如就藉由SEM觀察而觀察到的導電性粒子的剖面而言,與各突起部的剖面的頭頂部分外接的外接圓的半徑。Rb可設為例如就藉由SEM觀察而觀察到的導電性粒子的剖面而言,與導電層的下層的表面外接的外接圓的半徑、即實質上為芯材粒子的半徑。When the curvature radius of the top portion of the protrusion is set to Ra when the top portion is roughly planar, and the curvature radius of the surface 6 of the lower layer of the conductive layer where the protrusion is formed is set to Rb, the ratio of Ra to Rb (Ra/Rb) is preferably greater than 0.15 and less than 1.20, especially greater than 0.20 and less than 1.00. Since the top portion of the protrusion has a curvature radius that satisfies the above range, the contact between the conductive particles and the electrode becomes more uniform, thereby improving the connection stability. Furthermore, Ra can be set to, for example, the radius of a circumscribed circle circumscribing the top portion of the cross section of each protrusion in terms of the cross section of the conductive particles observed by SEM observation. Rb can be set to, for example, the radius of a circumscribed circle circumscribing the surface of the lower layer of the conductive layer in a cross section of the conductive particle observed by SEM observation, that is, substantially the radius of the core particle.

可認為藉由本突起部的高度為所述範圍,本導電性粒子與電極的接觸變得均勻,且本突起部的頭頂部分為大致平面的情況下,與存在於本導電性粒子的附近的其他導電性粒子的接觸得到抑制,從而防止短路。就該觀點而言,較佳為每一個導電性粒子的突起部的頭頂部分的大致平面狀部分的總和的面積廣。即,突起部的頭頂部分的面積的總和S2相對於一個導電性粒子的投影面積S1之比、S2/S1較佳為0.50以上、特別是0.55以上。再者,S2/S1小於1,就可確認到形成有大致平面狀的突起的觀點而言,較佳為0.95以下,更佳為0.90以下。導電性粒子的投影面積S1、及突起部的頭頂部分的面積的總和S2可藉由將SEM照片圖像取入至自動圖像分析裝置(尼利可(NIRECO)股份有限公司製造,路澤庫斯(Luzex)(註冊商標)AP)進行測定。It is believed that by setting the height of the protrusion to the range, the contact between the conductive particle and the electrode becomes uniform, and when the top portion of the protrusion is roughly flat, the contact with other conductive particles present near the conductive particle is suppressed, thereby preventing short circuit. From this point of view, it is preferred that the area of the sum of the roughly planar portions of the top portion of the protrusion of each conductive particle is wide. That is, the ratio of the sum of the areas of the top portions of the protrusions S2 to the projected area S1 of one conductive particle, S2/S1, is preferably greater than 0.50, particularly greater than 0.55. Furthermore, S2/S1 is less than 1, and from the point of view of confirming that a roughly planar protrusion is formed, it is preferably less than 0.95, and more preferably less than 0.90. The projected area S1 of the conductive particles and the total area S2 of the top portion of the protrusions can be measured by inputting the SEM photograph image into an automatic image analyzer (manufactured by NIRECO Co., Ltd., Luzex (registered trademark) AP).

另外,就防止短路的觀點而言,本突起部的至少一個形狀較佳為不定形。所謂本突起部為不定形,是在自與基部相反的一側對本突起部的頭頂部分進行觀察時,頭頂部分被曲率不同的多條曲線包圍的形狀。在自與基部相反的一側對本突起部的頭頂部分進行觀察時,頭頂部分較佳為圓形形狀及多邊形狀以外的形狀。 形狀為不定形的本突起部的數量針對每一個本導電性粒子,更佳為10個以上,進而佳為20個以上。或者將一個本導電性粒子所具有的本突起部的合計數設為100%,形狀為不定形的突起部的數量更佳為90%以上,進而佳為95%以上。 In addition, from the perspective of preventing short circuits, at least one shape of the protrusion is preferably amorphous. The so-called amorphous protrusion means that when the top part of the protrusion is observed from the side opposite to the base, the top part is surrounded by multiple curves with different curvatures. When the top part of the protrusion is observed from the side opposite to the base, the top part is preferably a shape other than a circular shape and a polygonal shape. The number of protrusions with amorphous shapes is preferably 10 or more, and more preferably 20 or more for each conductive particle. Or, when the total number of protrusions of one conductive particle is 100%, the number of protrusions with amorphous shapes is preferably 90% or more, and more preferably 95% or more.

本突起部較佳為與形成於本芯材粒子的表面的導電層成為連續體。即,本突起部較佳為與導電層同樣地包含金屬或合金。所謂此處所述的連續體,意指導電層與本突起部包含同一材料,在導電層與本突起部之間不存在接縫等有損整體感的部位。藉由導電層與本突起部成為連續體,本突起部的強度得到確保,因此即便在使用本導電性粒子時施加壓力,本突起部的基部亦不易破損。 本突起部更佳為包含與構成在芯材粒子的表面形成的導電層的金屬或合金相同的金屬或合金。 The protrusion is preferably continuous with the conductive layer formed on the surface of the core particle. That is, the protrusion preferably contains the same metal or alloy as the conductive layer. The so-called continuous body mentioned here means that the conductive layer and the protrusion contain the same material, and there is no joint or other part that damages the overall feeling between the conductive layer and the protrusion. By forming a continuous body with the conductive layer and the protrusion, the strength of the protrusion is ensured, so even if pressure is applied when using the conductive particle, the base of the protrusion is not easily damaged. The protrusion is more preferably composed of the same metal or alloy as the metal or alloy constituting the conductive layer formed on the surface of the core particle.

本導電性粒子的平均粒徑較佳為0.1 μm以上且50 μm以下,更佳為1 μm以上且30 μm以下。藉由導電性粒子的平均粒徑為所述範圍內,不會產生與相向電極間不同的方向上的短路,更容易確保相向電極間的導通。再者,在本發明中,導電性粒子的平均粒徑是藉由SEM觀察任意地提取200個粒子,以倍率10,000倍對粒徑進行測定而得的算術平均的值。在導電性粒子為球狀的情況下,導電性粒子的直徑是將導電性粒子投影至平面而得的圓的直徑,不包含突起部的高度。在導電性粒子並非球狀的情況下,粒徑是橫穿將導電性粒子投影至平面而得的圖像的、線段中的最長的長度。The average particle size of the conductive particles is preferably greater than 0.1 μm and less than 50 μm, and more preferably greater than 1 μm and less than 30 μm. By having the average particle size of the conductive particles within the above range, short circuits in directions different from those between the opposing electrodes will not occur, and it is easier to ensure conduction between the opposing electrodes. Furthermore, in the present invention, the average particle size of the conductive particles is the arithmetic mean value obtained by randomly extracting 200 particles through SEM observation and measuring the particle size at a magnification of 10,000 times. When the conductive particles are spherical, the diameter of the conductive particles is the diameter of a circle obtained by projecting the conductive particles onto a plane, excluding the height of the protrusions. When the conductive particles are not spherical, the particle size is the longest length of a line segment that crosses an image obtained by projecting the conductive particles onto a plane.

本導電性粒子的形狀可根據所述本芯材粒子的形狀適宜選擇。本導電性粒子的形狀既可與本芯材粒子的形狀相同,亦可不同,就製造效率的觀點而言,兩者較佳為相同的形狀。本導電性粒子的形狀例如可列舉球狀、纖維狀、中空狀、板狀、針狀或不定形。就填充性、連接性優異的觀點而言,本導電性粒子的形狀較佳為球狀。The shape of the conductive particles can be appropriately selected according to the shape of the core particles. The shape of the conductive particles can be the same as or different from the shape of the core particles. From the perspective of manufacturing efficiency, the two are preferably the same shape. The shape of the conductive particles can be, for example, spherical, fibrous, hollow, plate-like, needle-like or amorphous. From the perspective of excellent filling and connectivity, the shape of the conductive particles is preferably spherical.

所述本導電性粒子的製造例如可藉由包含以下步驟的製造方法(以下,亦記述為「本製造方法」)進行製造。 在芯材粒子的表面形成導電層的步驟 在所述導電層形成自表面突出的突起部的步驟 使所述突起部的高度平均化的步驟 The conductive particles can be produced, for example, by a production method (hereinafter also referred to as "the production method") comprising the following steps. Step of forming a conductive layer on the surface of the core particle Step of forming a protrusion protruding from the surface of the conductive layer Step of averaging the height of the protrusion

在芯材粒子的表面形成導電層的步驟(以下,亦記述為「導電層形成步驟」)中,在芯材粒子的表面藉由蒸鍍法、濺鍍法、機械化學法、混成法等乾式法、或者利用電解電鍍法、無電解電鍍法等的濕式法中的任一種方法在芯材粒子的表面形成導電層。另外,亦可將該些方法組合而在芯材粒子的表面形成導電層。 所使用的芯材粒子只要使用所述本芯材粒子即可,較佳的材質、形狀如上所述。 In the step of forming a conductive layer on the surface of the core particle (hereinafter also described as "conductive layer forming step"), a conductive layer is formed on the surface of the core particle by any of dry methods such as evaporation, sputtering, mechanochemical method, hybrid method, or wet methods such as electrolytic plating and electroless plating. In addition, these methods can be combined to form a conductive layer on the surface of the core particle. The core particle used can be the present core particle, and the preferred material and shape are as described above.

就容易獲得具有所期望的粒子特性的導電性粒子的觀點而言,導電層形成步驟較佳為藉由無電解電鍍法在芯材粒子的表面形成導電層,就容易獲得具有所期望的粒子特性的導電性粒子,並且容易形成後述的突起部的觀點而言,更佳為無電解電鍍法。特別是,導電層較佳為藉由無電解法形成的無電解鍍鎳合金層,更佳為無電解鍍鎳-磷層。From the viewpoint of easily obtaining conductive particles having desired particle properties, the conductive layer forming step is preferably to form the conductive layer on the surface of the core particle by electroless plating, and from the viewpoint of easily obtaining conductive particles having desired particle properties and easily forming the protrusions described later, electroless plating is more preferred. In particular, the conductive layer is preferably an electroless nickel alloy layer formed by an electroless method, and is more preferably an electroless nickel-phosphorus layer.

以下,對形成鍍鎳-磷合金層作為導電層的導電層形成步驟進行說明。 在導電層形成步驟中使用無電解電鍍法的情況下,芯材粒子較佳為其表面具有貴金屬離子的捕捉能力,或者以具有貴金屬離子的捕捉能力的方式進行表面改質。貴金屬離子較佳為鈀或銀的離子。所謂具有貴金屬離子的捕捉能力,是指可以螯合物或鹽的形式捕捉貴金屬離子。例如在芯材粒子的表面存在胺基、亞胺基、醯胺基、醯亞胺基、氰基、羥基、腈基、羧基等的情況下,該芯材粒子的表面具有貴金屬離子的捕捉能力。在以具有貴金屬離子的捕捉能力的方式進行表面改質的情況下,例如可使用日本專利特開昭61-64882號公報記載的方法。 The following is an explanation of the conductive layer formation step of forming a nickel-phosphorus alloy layer as a conductive layer. When an electroless plating method is used in the conductive layer formation step, the core particles preferably have a surface that has the ability to capture precious metal ions, or are surface-modified in a manner that has the ability to capture precious metal ions. The precious metal ions are preferably palladium or silver ions. The so-called ability to capture precious metal ions means that the precious metal ions can be captured in the form of a chelate or a salt. For example, when an amine group, an imine group, an amide group, an imide group, a cyano group, a hydroxyl group, a nitrile group, a carboxyl group, etc. are present on the surface of the core particles, the surface of the core particles has the ability to capture precious metal ions. When surface modification is performed in a manner that provides the ability to capture precious metal ions, for example, the method described in Japanese Patent Publication No. 61-64882 can be used.

使用具有貴金屬離子的捕捉能力或以具有貴金屬離子的捕捉能力的方式進行表面改質的芯材粒子作為本芯材粒子,並使貴金屬負載於其表面。具體而言,使本芯材粒子分散於如氯化鈀或硝酸銀般的貴金屬鹽的稀薄的酸性水溶液中。藉此在本芯材粒子的表面捕捉貴金屬離子。貴金屬鹽的濃度通常為每1 m 2的本芯材粒子的表面積為1×10 -7莫耳至1×10 -2莫耳的範圍。貴金屬離子經捕捉的本芯材粒子自水溶液中分離並被水洗。緊接著,使本芯材粒子懸浮於水中,並向其中加入還原劑而進行貴金屬離子的還原處理。藉此使貴金屬負載於本芯材粒子的表面。還原劑例如使用次磷酸鈉、氫氧化硼鈉、硼氫化鉀、二甲胺硼烷、肼、福馬林等,較佳為基於目標導電層的構成材料自該些中進行選擇。 Core particles having the ability to capture precious metal ions or having their surfaces modified in such a way as to have the ability to capture precious metal ions are used as the core particles, and precious metals are loaded on their surfaces. Specifically, the core particles are dispersed in a dilute acidic aqueous solution of a precious metal salt such as palladium chloride or silver nitrate. Precious metal ions are thereby captured on the surface of the core particles. The concentration of the precious metal salt is generally in the range of 1×10 -7 mol to 1×10 -2 mol per 1 m 2 of the surface area of the core particles. The core particles in which the precious metal ions are captured are separated from the aqueous solution and washed with water. Subsequently, the core particles are suspended in water, and a reducing agent is added thereto to perform a reduction treatment of the precious metal ions. Thereby, the noble metal is loaded on the surface of the core particles. The reducing agent is, for example, sodium hypophosphite, sodium borohydride, potassium borohydride, dimethylamine borane, hydrazine, formalin, etc. It is preferably selected from these based on the constituent material of the target conductive layer.

在本芯材粒子的表面捕捉貴金屬離子之前,出於使錫離子吸附至粒子的表面,提高與貴金屬的密接性的目的,亦可實施敏感化處理。為了使錫離子吸附至粒子的表面,例如只要將如上所述般的經表面改質後的本芯材粒子投入至氯化亞錫的水溶液中並攪拌規定時間即可。Before the surface of the present core material particles captures the precious metal ions, a sensitization treatment may be performed for the purpose of adsorbing tin ions on the surface of the particles and improving the adhesion with the precious metal. In order to adsorb tin ions on the surface of the particles, for example, the present core material particles after the surface modification as described above can be placed in an aqueous solution of stannous chloride and stirred for a predetermined time.

藉由將如此實施了前處理的本芯材粒子供於導電層形成步驟而在本芯材粒子的表面形成導電層。在導電層形成步驟後,進行形成自導電層的上表面突出的突起部的步驟(以下,亦記述為「突起部形成步驟」)。The present core particles subjected to the pretreatment are subjected to the conductive layer forming step to form a conductive layer on the surface of the present core particles. After the conductive layer forming step, a step of forming protrusions protruding from the upper surface of the conductive layer (hereinafter also referred to as "protrusion forming step") is performed.

突起部形成步驟較佳為緊接著於以下的導電層形成步驟進行突起部形成步驟。 導電層形成步驟較佳為將本芯材粒子的水性漿料與包含分散劑、鎳鹽、還原劑及錯合劑等的無電解鍍鎳浴加以混合的無電解鍍鎳法。在利用無電解鍍鎳法的導電層形成步驟中,在本芯材粒子上形成導電層的同時,產生電鍍液的自我分解。該自我分解在本芯材粒子的附近產生,因此在形成導電層時自我分解物被捕捉至本芯材粒子的表面上,藉此生成微小突起的核,與此同時進行導電層的形成。以所生成的微小突起的核為基點,藉由後述的突起部形成步驟使突起部成長。 The protrusion forming step is preferably performed immediately after the following conductive layer forming step. The conductive layer forming step is preferably an electroless nickel plating method in which an aqueous slurry of the core material particles is mixed with an electroless nickel plating bath containing a dispersant, a nickel salt, a reducing agent, and a complexing agent. In the conductive layer forming step using the electroless nickel plating method, self-decomposition of the plating solution occurs while the conductive layer is formed on the core material particles. The self-decomposition occurs near the core material particles, so that the self-decomposition products are captured on the surface of the core material particles when the conductive layer is formed, thereby generating the core of the micro-protrusions and simultaneously forming the conductive layer. Based on the core of the generated micro-protrusion, the protrusion is grown by the protrusion forming step described later.

在利用無電解鍍鎳法的導電層形成步驟中,較佳為使本芯材粒子較佳為以0.1 g/L至500 g/L,進而佳為1 g/L至300 g/L的範圍充分分散於水中,從而製備水性漿料。分散操作可使用通常攪拌、高速攪拌或如膠體磨機或均質機般的剪切分散裝置進行。另外,亦可在分散操作中併用超音波。根據需要,亦有時在分散操作中添加界面活性劑等分散劑。接著,在包含鎳鹽、還原劑、錯合劑及各種添加劑等的無電解鍍鎳液中添加進行了分散操作的芯材粒子的水性漿料,進行無電解電鍍法。In the step of forming the conductive layer by the electroless nickel plating method, it is preferred to fully disperse the core material particles in water in a range of preferably 0.1 g/L to 500 g/L, and more preferably 1 g/L to 300 g/L, to prepare an aqueous slurry. The dispersion operation can be performed using conventional stirring, high-speed stirring, or a shearing dispersion device such as a colloid mill or a homogenizer. In addition, ultrasound can also be used in the dispersion operation. If necessary, a dispersant such as a surfactant is sometimes added to the dispersion operation. Then, the aqueous slurry of the core material particles that has been dispersed is added to an electroless nickel plating solution containing a nickel salt, a reducing agent, a complexing agent, and various additives, and the electroless plating method is performed.

作為所述分散劑,例如可列舉非離子界面活性劑、兩性離子界面活性劑及/或水溶性高分子。 作為非離子界面活性劑,可使用聚乙二醇、聚氧乙烯烷基醚、聚氧乙烯烷基苯基醚等聚氧伸烷基醚系的界面活性劑。 作為兩性離子界面活性劑,可使用烷基二甲基乙酸甜菜鹼、烷基二甲基羧甲基乙酸甜菜鹼、烷基二甲基胺基乙酸甜菜鹼等甜菜鹼系的界面活性劑。 作為水溶性高分子,可使用聚乙烯醇、聚乙烯吡咯啶酮、羥乙基纖維素等。 該些分散劑可單獨使用一種或組合使用兩種以上。分散劑的使用量亦取決於其種類,一般相對於無電解鍍鎳液的體積而為0.5 g/L至30 g/L。特別是,若分散劑的使用量相對於無電解鍍鎳液的體積而為1 g/L至10 g/L的範圍,則就進一步提高導電層的密接性的觀點而言較佳。 As the dispersant, for example, nonionic surfactants, amphoteric surfactants and/or water-soluble polymers can be listed. As nonionic surfactants, polyoxyalkylene ether-based surfactants such as polyethylene glycol, polyoxyethylene alkyl ether, and polyoxyethylene alkylphenyl ether can be used. As amphoteric surfactants, betaine-based surfactants such as alkyl dimethyl acetate betaine, alkyl dimethyl carboxymethyl acetate betaine, and alkyl dimethyl aminoacetic acid betaine can be used. As water-soluble polymers, polyvinyl alcohol, polyvinyl pyrrolidone, hydroxyethyl cellulose, etc. can be used. These dispersants can be used alone or in combination of two or more. The amount of dispersant used also depends on its type, but is generally 0.5 g/L to 30 g/L relative to the volume of the electroless nickel plating solution. In particular, if the amount of dispersant used is in the range of 1 g/L to 10 g/L relative to the volume of the electroless nickel plating solution, it is better from the perspective of further improving the adhesion of the conductive layer.

作為鎳鹽,例如使用氯化鎳、硫酸鎳或乙酸鎳等,其濃度較佳為設為0.1 g/L至50 g/L的範圍。 作為還原劑,用於貴金屬離子的還原,基於目標導電層的構成材料進行選擇。作為還原劑,可列舉磷化合物及硼化合物。在例如使用次磷酸鈉作為磷化合物的情況下,其濃度較佳為0.1 g/L至50 g/L的範圍。 As nickel salt, nickel chloride, nickel sulfate or nickel acetate is used, and its concentration is preferably set to a range of 0.1 g/L to 50 g/L. As a reducing agent, it is used for the reduction of precious metal ions and is selected based on the constituent material of the target conductive layer. As reducing agents, phosphorus compounds and boron compounds can be listed. When sodium hypophosphite is used as the phosphorus compound, its concentration is preferably set to a range of 0.1 g/L to 50 g/L.

作為錯合劑,例如可使用檸檬酸、羥基乙酸、酒石酸、蘋果酸、乳酸、葡萄糖酸或其鹼金屬鹽或銨鹽等羧酸或羧酸鹽、甘胺酸等胺基酸、乙二胺、烷基胺等胺基酸、其他銨、EDTA或焦磷酸(鹽)等對鎳離子有錯合作用的化合物。該些可單獨使用一種,亦可組合使用兩種以上。其濃度較佳為1 g/L至100 g/L,進而佳為5 g/L至50 g/L的範圍。 該階段中的較佳的無電解鍍鎳液的pH值為3至14的範圍。無電解鍍鎳反應在添加芯材粒子的水性漿料後迅速開始,並伴隨著氫氣的產生。在完全確認不到該氫氣的產生的時點,導電層形成步驟結束。 導電層的厚度可藉由在所述導電層形成步驟中對鎳鹽、根據需要的分散劑、錯合劑等的濃度、pH值等進行調整來控制,可設為所述導電層的較佳的厚度的範圍。 As complexing agents, for example, carboxylic acids or carboxylic acid salts such as citric acid, hydroxyacetic acid, tartaric acid, apple acid, lactic acid, gluconic acid or their alkali metal salts or ammonium salts, amino acids such as glycine, ethylenediamine, alkylamines, other ammonium, EDTA or pyrophosphate (salt) and other compounds that have complexing effects on nickel ions can be used. These can be used alone or in combination of two or more. The concentration is preferably in the range of 1 g/L to 100 g/L, and more preferably in the range of 5 g/L to 50 g/L. The preferred pH value of the electroless nickel plating solution in this stage is in the range of 3 to 14. The electroless nickel plating reaction starts quickly after adding the aqueous slurry of the core particles, accompanied by the generation of hydrogen gas. When the generation of hydrogen gas is completely unconfirmed, the conductive layer formation step is completed. The thickness of the conductive layer can be controlled by adjusting the concentration of the nickel salt, the dispersant and the complexing agent as needed, the pH value, etc. in the conductive layer formation step, and can be set to a range of the preferred thickness of the conductive layer.

接著,在所述導電層形成步驟之後進行突起部形成步驟。在突起部形成步驟中,較佳為藉由將鎳鹽、還原劑及鹼添加至利用所述無電解鍍鎳法的導電層形成步驟的無電解鍍鎳液中來形成突起部。鎳鹽、還原劑及鹼的添加方法例如較佳為(i)使用包含鎳鹽、還原劑及鹼中的一種的第一水溶液、及包含剩餘的兩種的第二水溶液、或者(ii)使用包含鎳鹽的第一水溶液、包含還原劑的第二水溶液、及包含鹼的第三水溶液。 將所述(i)或(ii)的各水溶液同時添加至無電解鍍鎳液中,進一步繼續添加,藉此繼續進行無電解鍍鎳。當將各水溶液的添加中斷後,電鍍反應停止,添加後再次開始電鍍反應。藉由對各水溶液的添加量進行調整,可將所形成的導電層控制為所期望的膜厚,進而,以在所述導電層形成步驟中在導電層的表面生成的微小突起的核為起點形成突起部。 在所述水溶液向無電解鍍鎳液中的添加結束後,在完全確認不到氫氣的產生後,一邊暫時保持液溫一邊繼續進行攪拌而使反應完結。 Next, a protrusion forming step is performed after the conductive layer forming step. In the protrusion forming step, it is preferred to form the protrusion by adding a nickel salt, a reducing agent, and an alkali to the electroless nickel plating solution of the conductive layer forming step using the electroless nickel plating method. The method of adding the nickel salt, the reducing agent, and the alkali is preferably, for example, (i) using a first aqueous solution containing one of the nickel salt, the reducing agent, and the alkali, and a second aqueous solution containing the remaining two, or (ii) using a first aqueous solution containing a nickel salt, a second aqueous solution containing a reducing agent, and a third aqueous solution containing an alkali. The aqueous solutions of (i) or (ii) are added to the electroless nickel plating solution at the same time, and the addition is continued to continue the electroless nickel plating. When the addition of each aqueous solution is interrupted, the electroplating reaction stops, and the electroplating reaction is restarted after the addition. By adjusting the amount of each aqueous solution added, the conductive layer formed can be controlled to a desired film thickness, and further, the protrusions are formed starting from the cores of the micro-protrusions generated on the surface of the conductive layer in the conductive layer formation step. After the addition of the aqueous solution to the electroless nickel plating solution is completed, after the generation of hydrogen gas is completely confirmed, the reaction is completed while the liquid temperature is temporarily maintained and stirring is continued.

在所述(i)的情況下,較佳為使用包含鎳鹽的第一水溶液、以及包含還原劑及鹼的第二水溶液,但並不限於該組合。在該情況下,第一水溶液中不包含還原劑及鹼,第二水溶液中不包含鎳鹽。作為鎳鹽及還原劑,可使用之前所敘述的物質。作為鹼,例如可使用氫氧化鈉或氫氧化鉀等鹼金屬的氫氧化物。In the case of (i) above, it is preferred to use a first aqueous solution containing a nickel salt and a second aqueous solution containing a reducing agent and an alkali, but the present invention is not limited to this combination. In this case, the first aqueous solution does not contain a reducing agent and an alkali, and the second aqueous solution does not contain a nickel salt. As the nickel salt and the reducing agent, the substances described above can be used. As the alkali, for example, a hydroxide of an alkaline metal such as sodium hydroxide or potassium hydroxide can be used.

在所述(ii)的情況下,第一水溶液至第三水溶液中分別包含鎳鹽、還原劑及鹼,且各水溶液中不包含該成分以外的其他兩種成分。所使用的鹼與所述(i)的情況相同。In the case of (ii), the first to third aqueous solutions contain nickel salt, reducing agent and base, respectively, and each aqueous solution does not contain the other two components. The base used is the same as that in the case of (i).

無論是所述(i)及(ii)的情況中的哪一種,水溶液中的鎳鹽的濃度均較佳為10 g/L至1,000 g/L,更佳為50 g/L至500 g/L。 在使用磷化合物作為還原劑的情況下,還原劑的濃度較佳為100 g/L至1,000 g/L,更佳為100 g/L至800 g/L。在使用硼化合物作為還原劑的情況下,較佳為5 g/L至200 g/L,更佳為10 g/L至100 g/L。在使用肼或其衍生物作為還原劑的情況下,較佳為5 g/L至200 g/L,更佳為10 g/L至100 g/L。 鹼的濃度較佳為5 g/L至500 g/L,更佳為10 g/L至200 g/L。 In either case of (i) or (ii), the concentration of the nickel salt in the aqueous solution is preferably 10 g/L to 1,000 g/L, more preferably 50 g/L to 500 g/L. When a phosphorus compound is used as a reducing agent, the concentration of the reducing agent is preferably 100 g/L to 1,000 g/L, more preferably 100 g/L to 800 g/L. When a boron compound is used as a reducing agent, it is preferably 5 g/L to 200 g/L, more preferably 10 g/L to 100 g/L. When hydrazine or a derivative thereof is used as a reducing agent, it is preferably 5 g/L to 200 g/L, more preferably 10 g/L to 100 g/L. The concentration of the alkali is preferably 5 g/L to 500 g/L, more preferably 10 g/L to 200 g/L.

突起部形成步驟可在導電層形成步驟結束後連續地進行,或者亦可在導電層形成步驟結束後,暫時將形成有導電層的芯材粒子自所述無電解鍍鎳液分離後,進行突起部形成步驟。在將形成有導電層的芯材粒子自所述無電解鍍鎳液中分離的情況下,在導電層形成步驟結束後,只要藉由過濾等方法將形成有導電層的芯材粒子與電鍍液分開即可。分開後,使形成有導電層的芯材粒子重新分散於水中而製備水性漿料,並向其中添加以較佳為1 g/L 至100 g/L、進而佳為5 g/L至50 g/L的濃度範圍對錯合劑進行溶解而得的水溶液,從而製備以較佳為0.5 g/L至30 g/L,進而佳為1 g/L至10 g/L的範圍對分散劑進行溶解而得的水性漿料。亦可向所製備的所述水性漿料中添加所述(i)或(ii)中記載的水溶液,進行突起部形成步驟。如此,可形成具有突起部的導電層。The protrusion forming step may be performed continuously after the conductive layer forming step is completed, or the protrusion forming step may be performed after the conductive layer forming step is completed and the core material particles formed with the conductive layer are temporarily separated from the electroless nickel plating solution. In the case of separating the core material particles formed with the conductive layer from the electroless nickel plating solution, after the conductive layer forming step is completed, the core material particles formed with the conductive layer can be separated from the electroplating solution by filtering or the like. After separation, the core particles with the conductive layer formed thereon are redispersed in water to prepare an aqueous slurry, and an aqueous solution obtained by dissolving the complexing agent in a concentration range of preferably 1 g/L to 100 g/L, more preferably 5 g/L to 50 g/L is added thereto, thereby preparing an aqueous slurry obtained by dissolving the dispersant in a concentration range of preferably 0.5 g/L to 30 g/L, more preferably 1 g/L to 10 g/L. The aqueous solution described in (i) or (ii) can also be added to the prepared aqueous slurry to perform the protrusion forming step. In this way, a conductive layer with protrusions can be formed.

在所述突起部形成步驟中形成有突起部的導電性粒子藉由使突起部的高度平均化的步驟(以下,亦記述為「平均化步驟」)使突起部的高度平均化。藉由利用平均化步驟將突起部的高度的偏差設為所述範圍,可獲得本導電性粒子。 在平均化步驟中,藉由對在所述突起部形成步驟中獲得的突起部的頭頂部分進行研磨的方法而降低在突起部形成步驟中形成的突起部的高度,藉此可將突起部的高度的偏差設為規定的範圍。 The conductive particles formed with protrusions in the protrusion forming step average the height of the protrusions by a step of averaging the height of the protrusions (hereinafter also referred to as an "averaging step"). By setting the deviation of the height of the protrusions to the above range by the averaging step, the conductive particles can be obtained. In the averaging step, the height of the protrusions formed in the protrusion forming step is reduced by grinding the top part of the protrusions obtained in the protrusion forming step, thereby setting the deviation of the height of the protrusions to a predetermined range.

作為對突起部的頭頂部分進行研磨的方法,例如可列舉將球磨機、珠磨機等中使用的混合介質與在突起部形成步驟中獲得的導電性粒子加以混合的方法、將研磨劑與在突起部形成步驟中獲得的導電性粒子加以混合的方法、將在突起部形成步驟中獲得的導電性粒子彼此加以混合的方法、使在突起部形成步驟中獲得的導電性粒子在帶等的平面上旋轉的方法等。As a method for grinding the top part of the protrusion, for example, there can be listed a method of mixing a mixing medium used in a ball mill, a bead mill, etc. with the conductive particles obtained in the protrusion forming step, a method of mixing an abrasive with the conductive particles obtained in the protrusion forming step, a method of mixing the conductive particles obtained in the protrusion forming step with each other, a method of rotating the conductive particles obtained in the protrusion forming step on a plane such as a belt, etc., etc.

在將混合介質與導電性粒子加以混合的情況下,作為混合介質的材質,較佳為具有與導電性粒子的突起部的材質相同程度或其以上的硬度的材質。關於混合方法,可列舉使用具有攪拌葉片的攪拌機的方法、在進行自轉或公轉或兩者的運動的容器內進行混合的方法、在振動的容器內進行混合的方法等。 作為混合介質的材質,例如可列舉氧化鋯、鋯石、瑪瑙、氧化鋁、鐵、不鏽鋼、玻璃等。 When the mixed medium and the conductive particles are mixed, the material of the mixed medium is preferably a material having a hardness equal to or greater than that of the material of the protrusions of the conductive particles. As the mixing method, there can be cited a method of using a stirrer with stirring blades, a method of mixing in a container that rotates or revolves or both, a method of mixing in a vibrating container, etc. As the material of the mixed medium, there can be cited, for example, zirconia, zircon, agate, aluminum oxide, iron, stainless steel, glass, etc.

在將研磨劑與在突起部形成步驟中獲得的導電性粒子加以混合的情況下,作為研磨劑,可列舉金剛石、氮化硼、碳化矽、氧化鋁等。關於與研磨劑的混合方法,可列舉與將所述混合介質與導電性粒子加以混合的方法相同的方法。 作為將導電性粒子彼此加以混合的方法,亦可列舉與將所述混合介質和導電性粒子加以混合的方法相同的方法。 When the abrasive is mixed with the conductive particles obtained in the protrusion forming step, diamond, boron nitride, silicon carbide, aluminum oxide, etc. can be listed as the abrasive. As for the mixing method with the abrasive, the same method as the method of mixing the mixed medium with the conductive particles can be listed. As for the method of mixing the conductive particles with each other, the same method as the method of mixing the mixed medium with the conductive particles can also be listed.

在使突起部形成步驟中獲得的導電性粒子在帶等的平面上旋轉的情況下,平面的材質較佳為具有與導電性粒子的突起部的材質相同程度或其以上的硬度的材質。亦可以使在突起部形成步驟中獲得的導電性粒子在帶有傾斜的平面上落下的方式使在突起部形成步驟中獲得的導電性粒子旋轉而在平面上運動。另外,亦可使在突起部形成步驟中獲得的導電性粒子在沿一定方向移動的平面上向相反方向移動。When the conductive particles obtained in the protrusion forming step are rotated on a plane such as a belt, the material of the plane is preferably a material having a hardness equal to or greater than that of the material of the protrusion of the conductive particles. The conductive particles obtained in the protrusion forming step may be rotated and moved on the plane in a manner such that the conductive particles obtained in the protrusion forming step fall on a plane with an inclination. In addition, the conductive particles obtained in the protrusion forming step may be moved in the opposite direction on a plane moving in a certain direction.

亦可在進行所述研磨的各方法中,預先對研磨的條件與突起部的高度的關係進行測定,以突起部的高度的偏差成為本導電性粒子的範圍內的方式事先決定研磨條件。另外,亦可一邊進行研磨一邊隨時間對突起部的高度的偏差進行測定,基於其結果在突起部的高度的偏差成為本導電性粒子的範圍內的時點結束研磨。另外,同樣地可將突起部的高度設為所述較佳的範圍。In each method of performing the polishing, the relationship between the polishing conditions and the height of the protrusions can be measured in advance, and the polishing conditions can be determined in advance in such a way that the deviation of the height of the protrusions is within the range of the conductive particles. In addition, the deviation of the height of the protrusions can be measured over time while polishing, and based on the result, the polishing can be terminated when the deviation of the height of the protrusions is within the range of the conductive particles. In addition, the height of the protrusions can be set to the preferred range in the same manner.

在平均化步驟中降低突起部的高度的過程中,對突起部進行研磨以使突起部的頭頂部分成為平面狀,藉此可將突起部的頭頂部分設為大致平面狀。另外,藉由與本芯材粒子的表面的曲率一致地降低突起部的高度,可將突起部的頭頂部分的曲率半徑Ra與導電層的外表面的曲率半徑Rb設為所述較佳的關係。In the process of lowering the height of the protrusion in the averaging step, the protrusion is polished so that the top portion of the protrusion becomes a plane, thereby making the top portion of the protrusion substantially planar. In addition, by lowering the height of the protrusion in accordance with the curvature of the surface of the core particle, the curvature radius Ra of the top portion of the protrusion and the curvature radius Rb of the outer surface of the conductive layer can be set to the above-mentioned preferred relationship.

本製造方法可在所述平均化步驟後更包含如下步驟:在為1,000 Pa以下、較佳為0.01 Pa至900 Pa、特佳為0.1 Pa至500 Pa的真空下,且為200℃至600℃、較佳為250℃至500℃、特佳為300℃至450℃的溫度下進行加熱處理。 藉由在保持此種真空狀態的同時對導電性粒子進行加熱,即便在高溫下,導電層的金屬亦不易發生副反應,結晶化進展,因此電阻變低,電性的導通性優異。再者,本發明中的真空度是將絕對壓力、即絕對真空設為0時的值。 The manufacturing method may further include the following step after the averaging step: heat treatment at a temperature of 200°C to 600°C, preferably 250°C to 500°C, and particularly 300°C to 450°C under a vacuum of less than 1,000 Pa, preferably 0.01 Pa to 900 Pa, and particularly preferably 0.1 Pa to 500 Pa. By heating the conductive particles while maintaining such a vacuum state, the metal of the conductive layer is less likely to undergo side reactions even at high temperatures, and crystallization progresses, so the resistance becomes low and the electrical conductivity is excellent. Furthermore, the vacuum degree in the present invention is the value when the absolute pressure, that is, the absolute vacuum, is set to 0.

進行加熱處理的步驟中的加熱處理時間較佳為0.1小時至10小時,進而佳為0.5小時至5小時。藉由採用該處理時間,可抑制製造成本的增大,另外由熱歷程引起的芯材粒子或導電層的改質得到抑制,從而可減小對品質帶來的影響。再者,加熱處理時間是自達到目標處理溫度至加熱處理結束為止的時間。The heat treatment time in the step of performing the heat treatment is preferably 0.1 to 10 hours, and more preferably 0.5 to 5 hours. By adopting this treatment time, the increase in manufacturing cost can be suppressed, and the modification of the core particles or the conductive layer caused by the thermal history can be suppressed, thereby reducing the impact on the quality. In addition, the heat treatment time is the time from reaching the target treatment temperature to the end of the heat treatment.

進行加熱處理的步驟可在使導電性粒子靜置的狀態下進行,亦可一邊進行攪拌一邊進行。在使導電性粒子靜置的狀態下進行加熱處理的情況下,較佳為使導電性粒子以0.1 mm至100 mm的厚度靜置。藉由以該厚度靜置,可順利地進行對導電層的加熱處理,從而可抑制製造成本。The step of performing the heat treatment may be performed while the conductive particles are left at rest or while being stirred. When the conductive particles are left at rest for the heat treatment, it is preferred that the conductive particles be left at a thickness of 0.1 mm to 100 mm. By leaving the conductive particles at this thickness, the heat treatment of the conductive layer can be smoothly performed, thereby suppressing the manufacturing cost.

進行加熱處理的步驟是將裝入有導電性粒子的容器減壓至真空後,在靜置的狀態下進行或一邊攪拌一邊進行。此時,可在利用氮氣等惰性氣體對裝入有導電性粒子的容器的氣相部進行置換後減壓至真空,亦可直接減壓至真空。另外,加熱處理亦可根據需要進行多次。The step of heat treatment is to reduce the pressure of the container containing the conductive particles to vacuum and then perform the heat treatment in a static state or while stirring. At this time, the gas phase of the container containing the conductive particles can be replaced with an inert gas such as nitrogen and then reduced to vacuum, or it can be directly reduced to vacuum. In addition, the heat treatment can be performed multiple times as needed.

另外,較佳為進行加熱處理的步驟在常溫下達到1,000 Pa以下、較佳為0.01 Pa至900 Pa、特佳為0.1 Pa至500 Pa的真空度後,保持5分鐘至60分鐘、進而10分鐘至50分鐘的時間後,升溫至處理溫度。藉由該操作,可防止由加熱環境或導電性粒子中的氧或水分等引起的導電層的氧化,因此可降低連接電阻。In addition, it is preferred that the heat treatment step is performed by maintaining the vacuum degree at room temperature to 1,000 Pa or less, preferably 0.01 Pa to 900 Pa, and particularly preferably 0.1 Pa to 500 Pa, for 5 to 60 minutes, and further 10 to 50 minutes, and then raising the temperature to the treatment temperature. This operation can prevent oxidation of the conductive layer caused by the heated environment or oxygen or moisture in the conductive particles, thereby reducing the connection resistance.

較佳為在所述進行加熱處理的步驟後,在保持所述真空度的狀態下降溫至50℃以下,進而降溫至40℃以下後釋放真空。其理由在於,當在加熱處理後不久的溫度下釋放真空時,在環境中存在氧或水分的情況下導電層的氧化得到促進,因此連接電阻有可能會變高。另外,就製造成本的方面而言,真空的釋放可在通常的大氣中進行,就防止導電層的氧化的觀點而言,更佳為藉由吹掃氮、氬、氦等惰性氣體或氫-氮混合氣體等非氧化性氣體來進行。It is preferred that after the step of performing the heat treatment, the temperature is lowered to 50°C or less while maintaining the vacuum degree, and then the vacuum is released after the temperature is lowered to 40°C or less. The reason is that when the vacuum is released at a temperature immediately after the heat treatment, the oxidation of the conductive layer is promoted in the presence of oxygen or moisture in the environment, so the connection resistance may become higher. In addition, from the perspective of manufacturing cost, the vacuum can be released in a normal atmosphere, and from the perspective of preventing oxidation of the conductive layer, it is more preferably released by blowing an inert gas such as nitrogen, argon, helium, or a non-oxidizing gas such as a hydrogen-nitrogen mixed gas.

本導電性粒子如後所述般可較佳地用作如導電性黏接劑的導電性填料般的導電性材料。包含本導電性粒子與絕緣樹脂的導電性材料(以下,亦記述為「本導電性材料」)較佳為進一步利用絕緣樹脂來被覆其表面,以防止導電性粒子間發生短路。絕緣樹脂的被覆形成為在不施加壓力等的狀態下導電性粒子的表面儘量不露出,且被使用導電性黏接劑將兩張電極黏接時施加的熱及壓力破壞,導電性粒子的表面中至少突起部露出。絕緣樹脂的厚度可設為0.1 μm至0.5 μm左右。絕緣樹脂可覆蓋導電性粒子的整個表面,亦可僅覆蓋導電性粒子的表面的一部分。As described below, the conductive particles can be preferably used as a conductive material such as a conductive filler of a conductive adhesive. The conductive material comprising the conductive particles and an insulating resin (hereinafter, also described as "the conductive material") is preferably further coated with an insulating resin to prevent short circuits between the conductive particles. The insulating resin coating is formed so that the surface of the conductive particles is not exposed as much as possible when no pressure is applied, and at least the protrusions on the surface of the conductive particles are exposed when the conductive adhesive is used to bond two electrodes. The thickness of the insulating resin can be set to about 0.1 μm to 0.5 μm. The insulating resin may cover the entire surface of the conductive particles or may cover only a portion of the surface of the conductive particles.

作為絕緣樹脂,例如可列舉:酚樹脂、脲樹脂、三聚氰胺樹脂、烯丙基樹脂、呋喃樹脂、聚酯樹脂、環氧樹脂、矽酮樹脂、聚醯胺-醯亞胺樹脂、聚醯亞胺樹脂、聚胺基甲酸酯樹脂、氟樹脂、聚乙烯、聚丙烯、聚丁烯等聚烯烴樹脂;聚(甲基)丙烯酸烷基酯樹脂、聚(甲基)丙烯酸樹脂、聚苯乙烯樹脂、丙烯腈-苯乙烯-丁二烯樹脂、乙烯基樹脂、聚醯胺樹脂、聚碳酸酯樹脂、聚縮醛樹脂、離子聚合物樹脂、聚醚碸樹脂、聚苯氧化物樹脂、聚碸樹脂、聚偏氟乙烯樹脂、乙基纖維素樹脂及乙酸纖維素樹脂等包含有機聚合物的樹脂。Examples of the insulating resin include phenol resins, urea resins, melamine resins, allyl resins, furan resins, polyester resins, epoxy resins, silicone resins, polyamide-imide resins, polyimide resins, polyurethane resins, fluororesins, polyolefin resins such as polyethylene, polypropylene, and polybutene; polyalkyl (meth)acrylate resins, poly Resins including organic polymers such as (meth)acrylic resins, polystyrene resins, acrylonitrile-styrene-butadiene resins, vinyl resins, polyamide resins, polycarbonate resins, polyacetal resins, ionomer resins, polyether sulfone resins, polyphenylene oxide resins, polysulfone resins, polyvinylidene fluoride resins, ethyl cellulose resins and cellulose acetate resins.

作為利用絕緣樹脂來被覆導電性粒子的表面而形成絕緣被覆層的方法,可列舉凝聚法、界面聚合法、就地(in situ)聚合法及液中硬化被覆法等化學方法、噴霧乾燥法、空氣中懸浮被覆法、真空蒸鍍被覆法、乾摻法、混成法、靜電聚並法、溶解分散冷卻法及無機質膠囊化法等物理機械方法、界面沈澱法等物理化學方法。Methods for forming an insulating coating layer by coating the surface of conductive particles with an insulating resin include chemical methods such as coagulation, interfacial polymerization, in situ polymerization, and liquid curing coating; physical and mechanical methods such as spray drying, air suspension coating, vacuum evaporation coating, dry blending, mixing, electrostatic polymerization, solution dispersion cooling, and inorganic encapsulation; and physical and chemical methods such as interfacial precipitation.

關於構成所述絕緣樹脂的有機聚合物,以非導電性為條件,就提高與導電性粒子的密接性的觀點而言,在聚合物的結構中可包含含有離子性基的單體成分。包含離子性基的單體成分可為交聯性單體成分或非交聯性單體成分中的任一種。較佳為使用交聯性單體成分及非交聯性單體成分中的至少一種具有離子性基的單體成分來形成有機聚合物。再者,所謂「單體成分」,是指源自有機聚合物中的單體的結構,是由單體衍生的成分。藉由將包含離子性基的單體供於聚合,形成包含含有離子性基的單體成分作為結構單元的有機聚合物。Regarding the organic polymer constituting the insulating resin, from the viewpoint of improving the adhesion with the conductive particles under the condition of non-conductivity, a monomer component containing an ionic group may be included in the structure of the polymer. The monomer component containing an ionic group may be any one of a crosslinking monomer component and a non-crosslinking monomer component. It is preferred to use at least one monomer component having an ionic group among the crosslinking monomer component and the non-crosslinking monomer component to form the organic polymer. Furthermore, the so-called "monomer component" refers to a structure derived from a monomer in the organic polymer, and is a component derived from the monomer. By subjecting the monomer containing an ionic group to polymerization, an organic polymer containing the monomer component containing an ionic group as a structural unit is formed.

離子性基較佳為存在於構成絕緣樹脂的有機聚合物中。另外,離子性基較佳為與構成有機聚合物的單體成分進行化學鍵結。關於離子性基是否存在於有機聚合物的界面,可在導電性粒子的表面形成包含具有離子性基的有機聚合物的絕緣樹脂時,利用掃描型電子顯微鏡觀察並根據絕緣樹脂是否附著於導電性粒子的表面來進行判斷。The ionic group is preferably present in the organic polymer constituting the insulating resin. In addition, the ionic group is preferably chemically bonded to the monomer component constituting the organic polymer. Whether the ionic group is present at the interface of the organic polymer can be determined by observing with a scanning electron microscope whether the insulating resin is attached to the surface of the conductive particles when an insulating resin containing an organic polymer having an ionic group is formed on the surface of the conductive particles.

作為離子性基,例如可列舉鏻基、銨基、鋶基等鎓系官能基。該些中,就提高導電性粒子及絕緣樹脂的密接性,形成以高水準兼具絕緣性與導通可靠性的導電性粒子的觀點而言,較佳為銨基或鏻基,進而佳為鏻基。Examples of the ionic group include onium functional groups such as phosphonium, ammonium, and cobalt. Among these, ammonium or phosphonium groups are preferred, and phosphonium groups are more preferred, from the viewpoint of improving the adhesion between the conductive particles and the insulating resin and forming conductive particles having both high levels of insulation and conduction reliability.

關於鎓系官能基,可較佳地列舉下述通式(1)所表示者。As the onium functional group, preferably, there can be mentioned those represented by the following general formula (1).

[化1] 再者,所述通式(1)中,X為磷原子、氮原子或硫原子,R可相同亦可不同,為氫原子、直鏈狀、支鏈狀或環狀的烷基、或芳基。n在X為氮原子、磷原子的情況下為1,在X為硫原子的情況下為0。*為鍵結鍵。 [Chemistry 1] In the general formula (1), X is a phosphorus atom, a nitrogen atom or a sulfur atom, and R may be the same or different and is a hydrogen atom, a linear, branched or cyclic alkyl group, or an aryl group. n is 1 when X is a nitrogen atom or a phosphorus atom, and is 0 when X is a sulfur atom. * is a bond.

作為相對於離子性基的抗衡離子,例如可列舉鹵化物離子。作為鹵化物離子的例子,可列舉Cl -、F -、Br -、I -As a counter ion to the ionic group, for example, a halide ion can be cited. Examples of the halide ion include Cl - , F - , Br - , and I - .

所述通式(1)中,作為R所表示的直鏈狀的烷基,例如可列舉碳數1以上且20以下的直鏈狀烷基,具體而言,可列舉甲基、乙基、正丙基、正丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基、正十一烷基、正十二烷基、正十三烷基、正十四烷基、正十五烷基、正十六烷基、正十七烷基、正十八烷基、正十九烷基、正二十烷基等。In the general formula (1), examples of the linear alkyl group represented by R include linear alkyl groups having 1 to 20 carbon atoms, and specifically include methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, and the like.

所述通式(1)中,作為R所表示的支鏈狀的烷基,例如可列舉碳數3以上且8以下的支鏈狀烷基,具體而言,可列舉異丙基、異丁基、第二丁基、第三丁基、異戊基、第二戊基、第三戊基、異己基、第二己基、第三己基、乙基己基等。In the general formula (1), examples of the branched alkyl group represented by R include branched alkyl groups having 3 to 8 carbon atoms, and specifically include isopropyl, isobutyl, sec-butyl, t-butyl, isopentyl, sec-pentyl, t-pentyl, isohexyl, sec-hexyl, t-hexyl, ethylhexyl and the like.

所述通式(1)中,作為R所表示的環狀的烷基,可列舉環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環十八烷基等環烷基等。In the general formula (1), examples of the cyclic alkyl group represented by R include cycloalkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl and cyclooctadecyl.

所述通式(1)中,作為R所表示的芳基,可列舉苯基、苄基、甲苯基、鄰二甲苯基等。In the general formula (1), examples of the aryl group represented by R include phenyl, benzyl, tolyl, and o-xylyl.

所述通式(1)中,R較佳為碳數1以上且12以下的烷基,更佳為碳數1以上且10以下的烷基,進而佳為碳數1以上且8以下的烷基。另外,通式(1)中,R亦進而佳為直鏈狀烷基。藉由鎓系官能基成為此種結構,可提高絕緣樹脂與導電性粒子的密接性而確保絕緣性,並且可進一步提高熱壓接時的導通可靠性。In the general formula (1), R is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and even more preferably an alkyl group having 1 to 8 carbon atoms. In the general formula (1), R is also even more preferably a linear alkyl group. By forming the onium functional group into such a structure, the adhesion between the insulating resin and the conductive particles can be improved to ensure insulation, and the conduction reliability during heat pressing can be further improved.

就容易實現單體的獲取及聚合物的合成,並且提高絕緣樹脂的製造效率的觀點而言,構成絕緣樹脂的具有離子性基的有機聚合物較佳為具有下述通式(2)或通式(3)所表示的結構單元。From the viewpoint of facilitating the acquisition of monomers and the synthesis of polymers and improving the production efficiency of the insulating resin, the organic polymer having an ionic group constituting the insulating resin preferably has a structural unit represented by the following general formula (2) or (3).

[化2] 再者,通式(2)中,X、R及n與所述通式(1)為相同含義。m為0以上且5以下的整數。An -表示一價的陰離子。在m為0的情況下表示X與苯環直接鍵結。 [Chemistry 2] In the general formula (2), X, R and n have the same meanings as in the general formula (1). m is an integer of 0 or more and 5 or less. An- represents a monovalent anion. When m is 0, it means that X is directly bonded to the benzene ring.

[化3] 再者,通式(3)中,X、R及n與所述通式(1)為相同含義。An -表示一價的陰離子。m 1為1以上且5以下的整數。R 5為氫原子或甲基。 [Chemistry 3] In the general formula (3), X, R and n have the same meanings as in the general formula (1). An- represents a monovalent anion. m1 is an integer of 1 to 5. R5 is a hydrogen atom or a methyl group.

作為所述通式(2)及所述通式(3)中的R的例子,適宜適用所述通式(1)中的R的官能基的說明。離子性基可鍵結於相對於通式(2)的苯環的CH基為對位、鄰位、間位中的任一個,較佳為鍵結於對位。通式(2)及通式(3)中,作為一價的An -,可較佳地列舉鹵化物離子。作為鹵化物離子的例子,可列舉Cl -、F -、Br -、I -As examples of R in the general formula (2) and the general formula (3), the description of the functional group of R in the general formula (1) is appropriately applied. The ionic group may be bonded to the CH group of the benzene ring of the general formula (2) at any of the para position, ortho position, or meta position, and preferably at the para position. In the general formula (2) and the general formula (3), as the monovalent An - , preferably a halide ion can be listed. Examples of the halide ion include Cl - , F - , Br - , and I - .

另外,在通式(2)中,m較佳為0以上且2以下的整數,更佳為0或1,特佳為1。在通式(3)中,m 1較佳為1以上且3以下,更佳為1或2,最佳為2。 In general formula (2), m is preferably an integer of 0 to 2, more preferably 0 or 1, and particularly preferably 1. In general formula (3), m is preferably 1 to 3, more preferably 1 or 2, and most preferably 2.

具有離子性基的有機聚合物例如較佳為包含具有鎓系的官能基且具有乙烯性不飽和鍵的單體成分而構成。就容易實現單體的獲取及聚合物的合成、提高絕緣樹脂的製造效率的觀點而言,具有離子性基的有機聚合物亦較佳為包含非交聯性單體成分。The organic polymer having an ionic group is preferably composed of a monomer component having an onium functional group and an ethylenically unsaturated bond. From the viewpoint of facilitating the acquisition of monomers and the synthesis of polymers and improving the production efficiency of insulating resins, the organic polymer having an ionic group is also preferably composed of a non-crosslinking monomer component.

作為具有鎓系的官能基且具有乙烯性不飽和鍵的非交聯性單體,例如可列舉:甲基丙烯酸N,N-二甲基胺基乙酯、N,N-二甲基胺基丙基丙烯醯胺、N,N,N-三甲基-N-2-甲基丙烯醯氧基乙基氯化銨等含銨基的單體;甲基丙烯酸苯基二甲基鋶甲基硫酸鹽等具有鋶基的單體;4-(乙烯基苄基)三乙基氯化鏻、4-(乙烯基苄基)三甲基氯化鏻、4-(乙烯基苄基)三丁基氯化鏻、4-(乙烯基苄基)三辛基氯化鏻、4-(乙烯基苄基)三苯基氯化鏻、2-(甲基丙烯醯氧基乙基)三甲基氯化鏻、2-(甲基丙烯醯氧基乙基)三乙基氯化鏻、2-(甲基丙烯醯氧基乙基)三丁基氯化鏻、2-(甲基丙烯醯氧基乙基)三辛基氯化鏻、2-(甲基丙烯醯氧基乙基)三苯基氯化鏻等具有鏻基的單體等。在具有離子性基的有機聚合物中,亦可包含兩種以上的非交聯性單體成分。Examples of non-crosslinking monomers having an onium functional group and an ethylenic unsaturated bond include: monomers containing an ammonium group such as N,N-dimethylaminoethyl methacrylate, N,N-dimethylaminopropyl acrylamide, and N,N,N-trimethyl-N-2-methacryloyloxyethyl ammonium chloride; monomers containing an ammonium group such as phenyldimethylcopperium methyl methacrylate; 4-(vinylbenzyl)triethylphosphonium chloride, 4-(vinylbenzyl)trimethylphosphonium chloride; , 4-(vinylbenzyl)tributylphosphonium chloride, 4-(vinylbenzyl)trioctylphosphonium chloride, 4-(vinylbenzyl)triphenylphosphonium chloride, 2-(methacryloyloxyethyl)trimethylphosphonium chloride, 2-(methacryloyloxyethyl)triethylphosphonium chloride, 2-(methacryloyloxyethyl)tributylphosphonium chloride, 2-(methacryloyloxyethyl)trioctylphosphonium chloride, 2-(methacryloyloxyethyl)triphenylphosphonium chloride and the like. The organic polymer having an ionic group may contain two or more non-crosslinking monomer components.

構成絕緣樹脂的有機聚合物可為在單體成分的全部鍵結有離子性基而成者,或者亦可在有機聚合物的全部結構單元中的一部分鍵結有離子性基。在有機聚合物的全部結構單元中的一部分鍵結有離子性基的情況下,鍵結有離子性基的單體成分的比例較佳為0.01莫耳%以上且99莫耳%以下,更佳為0.02莫耳%以上且95莫耳%以下。此處,關於有機聚合物中的單體成分的數量,在有機聚合物具有乙烯性不飽和鍵的情況下,將源自一個乙烯性不飽和鍵的結構作為一個單體的結構單元來進行計數。在離子性基包含於交聯性單體及非交聯性單體此兩者中的情況下,單體成分的比例設為其總量。The organic polymer constituting the insulating resin may be one in which all monomer components are bonded with ionic groups, or may be one in which a portion of all structural units of the organic polymer are bonded with ionic groups. When a portion of all structural units of the organic polymer are bonded with ionic groups, the ratio of the monomer components bonded with ionic groups is preferably 0.01 mol% to 99 mol%, more preferably 0.02 mol% to 95 mol%. Here, regarding the number of monomer components in the organic polymer, when the organic polymer has an ethylenically unsaturated bond, the structure derived from one ethylenically unsaturated bond is counted as a structural unit of one monomer. When the ionic group is contained in both the crosslinking monomer and the non-crosslinking monomer, the ratio of the monomer component is set to the total amount thereof.

作為利用絕緣樹脂的被覆的形態,可列舉多個包含絕緣樹脂的絕緣性微粒子呈層狀配置的形態、或者絕緣樹脂成為連續皮膜的形態。Examples of the coating form using the insulating resin include a form in which a plurality of insulating fine particles containing the insulating resin are arranged in layers, or a form in which the insulating resin forms a continuous film.

在所述絕緣樹脂包含絕緣性微粒子的情況下,在電極間對被絕緣性微粒子被覆的導電性粒子進行熱壓接,藉此絕緣性微粒子熔融、變形、剝離或在導電性粒子表面移動,藉此熱壓接後的部分處的導電性粒子的金屬表面露出,藉此能夠實現電極間的導通而可獲得連接性。另一方面,關於導電性粒子中的朝向熱壓接方向以外的方向的表面部分,大致維持了絕緣性微粒子對導電性粒子表面的被覆狀態,因此可防止熱壓接方向以外的方向上的導通。When the insulating resin contains insulating particles, the conductive particles coated with the insulating particles are heat-pressed between the electrodes, whereby the insulating particles melt, deform, peel off, or move on the surface of the conductive particles, thereby exposing the metal surface of the conductive particles at the hot-pressed portion, thereby achieving conduction between the electrodes and obtaining connectivity. On the other hand, with respect to the surface portion of the conductive particles facing a direction other than the hot-pressing direction, the coating state of the conductive particle surface by the insulating particles is roughly maintained, thereby preventing conduction in a direction other than the hot-pressing direction.

絕緣性微粒子藉由在其表面包含所述離子性基而容易與導電性粒子密接,藉此可使導電性粒子表面處的被絕緣性微粒子被覆的比例充分,並且可有效地防止絕緣性微粒子自導電性粒子的剝離等。因此,容易發揮出絕緣性微粒子對與相向電極間不同的方向上的短路防止效果,可期待該方向上的絕緣性的提高。The insulating particles contain the ionic groups on their surfaces, so that they can be easily in close contact with the conductive particles, thereby making the proportion of the conductive particles covered by the insulating particles sufficient, and effectively preventing the insulating particles from peeling off from the conductive particles. Therefore, the insulating particles can easily exert the effect of preventing short circuits in a direction different from the opposing electrodes, and the improvement of the insulation in that direction can be expected.

絕緣性微粒子的形狀並無特別限制,可為球狀,或者亦可為球狀以外的形狀。作為球狀以外的形狀,例如可列舉纖維狀、中空狀、板狀或針狀。另外,絕緣性微粒子亦可為在其表面具有多個突起部者或者不定形者。就對導電性粒子的附著性的方面或合成的容易性的方面而言,較佳為球狀的絕緣性微粒子。The shape of the insulating microparticles is not particularly limited, and may be spherical or may be a shape other than spherical. Examples of shapes other than spherical include fibrous, hollow, plate-like, or needle-like. In addition, the insulating microparticles may have a plurality of protrusions on their surface or may be amorphous. In terms of adhesion to conductive particles or ease of synthesis, spherical insulating microparticles are preferred.

絕緣性微粒子的平均粒徑較佳為10 nm以上且3,000 nm以下,更佳為15 nm以上且2,000 nm以下。藉由絕緣性微粒子的平均粒徑為所述範圍內,所獲得的被覆粒子不會產生與相向電極間不同的方向上的短路,容易確保相向電極間的導通。絕緣性微粒子的平均粒徑是在使用掃描型電子顯微鏡的觀察中測定而得的值,具體而言是利用後述的實施例中記載的方法進行測定。The average particle size of the insulating microparticles is preferably greater than 10 nm and less than 3,000 nm, and more preferably greater than 15 nm and less than 2,000 nm. When the average particle size of the insulating microparticles is within the above range, the obtained coated particles will not produce a short circuit in a direction different from that between the opposing electrodes, and it is easy to ensure conduction between the opposing electrodes. The average particle size of the insulating microparticles is a value measured by observation using a scanning electron microscope, and is specifically measured by the method described in the embodiments described below.

藉由所述方法測定出的絕緣性微粒子的粒度分佈通常具有寬度。一般而言,粉體的粒度分佈的寬度由下述式(4)所表示的變異係數(Coefficient of Variation,以下亦記載為「C.V.」)表示。 C.V.(%)=(標準偏差/平均粒徑)×100…(4) 該C.V.越大,粒度分佈的範圍越廣,另一方面,C.V.越小,粒度分佈越尖銳。本導電性材料中使用的絕緣性微粒子的C.V.較佳為0.1%以上且20%以下,更佳為0.5%以上且15%以下,特佳為1%以上且10%以下。藉由C.V.為該範圍,具有可使由絕緣性微粒子形成被覆層的厚度均勻的優點。 The particle size distribution of the insulating microparticles measured by the above method usually has a width. In general, the width of the particle size distribution of a powder is represented by the coefficient of variation (hereinafter also referred to as "C.V.") represented by the following formula (4). C.V. (%) = (standard deviation/average particle size) × 100... (4) The larger the C.V., the wider the range of the particle size distribution. On the other hand, the smaller the C.V., the sharper the particle size distribution. The C.V. of the insulating microparticles used in the present conductive material is preferably 0.1% or more and 20% or less, more preferably 0.5% or more and 15% or less, and particularly preferably 1% or more and 10% or less. By setting the C.V. to this range, there is an advantage that the thickness of the coating layer formed by insulating fine particles can be made uniform.

另外,亦可為絕緣樹脂為連續皮膜的形態來代替所述絕緣性微粒子呈層狀配置的形態。藉由在連續被膜為具有離子性基的絕緣樹脂的情況下,在電極間對本導電性粒子進行熱壓接而使連續皮膜熔融、變形或剝離,藉此本導電性粒子的表面露出,藉此能夠實現電極間的導通而可獲得連接性。特別是,藉由在電極間對本導電性粒子進行熱壓接,連續皮膜破裂,表面露出的本導電性粒子變多。 另一方面,在導電性粒子中的朝向與熱壓接方向不同的方向的表面部分中,大致維持了連續皮膜對本導電性粒子的被覆狀態,因此可防止熱壓接方向以外的方向上的導通。在絕緣樹脂為連續被膜的情況下,較佳為在表面具有離子性基的連續被膜。 In addition, the insulating resin may be in the form of a continuous film instead of the insulating particles being arranged in layers. When the continuous film is an insulating resin having an ionic group, the conductive particles are heat-pressed between electrodes to melt, deform or peel off the continuous film, thereby exposing the surface of the conductive particles, thereby achieving conduction between the electrodes and obtaining connectivity. In particular, by heat-pressing the conductive particles between electrodes, the continuous film is broken, and more conductive particles are exposed on the surface. On the other hand, in the surface portion of the conductive particles facing in a direction different from the hot pressing direction, the continuous film covering the conductive particles is roughly maintained, thereby preventing conduction in directions other than the hot pressing direction. When the insulating resin is a continuous film, it is preferably a continuous film having ionic groups on the surface.

就提高與相向電極間不同的方向上的絕緣性的方面而言,連續皮膜的厚度較佳為10 nm以上,就相向電極間的導通容易性的方面而言,連續皮膜的厚度較佳為3,000 nm以下。就該方面而言,連續皮膜的厚度較佳為10 nm以上且3,000 nm以下,更佳為15 nm以上且2,000 nm以下。In terms of improving the insulation in a direction different from the opposing electrodes, the thickness of the continuous film is preferably 10 nm or more, and in terms of the ease of conduction between the opposing electrodes, the thickness of the continuous film is preferably 3,000 nm or less. In this regard, the thickness of the continuous film is preferably 10 nm or more and 3,000 nm or less, and more preferably 15 nm or more and 2,000 nm or less.

與絕緣性微粒子相同,在連續皮膜中,離子性基較佳為形成絕緣樹脂的化學結構的一部分來作為構成連續皮膜的絕緣樹脂的一部分。在連續皮膜中,離子性基較佳為含有於構成連續皮膜的絕緣樹脂的結構單元中的至少一種結構中。離子性基較佳為與構成連續皮膜的絕緣樹脂進行化學鍵結,更佳為與絕緣樹脂的側鏈進行鍵結。Similar to the insulating fine particles, in the continuous film, the ionic group preferably forms a part of the chemical structure of the insulating resin as a part of the insulating resin constituting the continuous film. In the continuous film, the ionic group is preferably contained in at least one structure of the structural unit of the insulating resin constituting the continuous film. The ionic group is preferably chemically bonded to the insulating resin constituting the continuous film, and more preferably bonded to the side chain of the insulating resin.

在本導電性材料具有絕緣樹脂的連續皮膜的情況下,較佳為在利用在其表面具有離子性基的絕緣性微粒子被覆本導電性粒子後,對該絕緣性微粒子進行加熱而獲得的連續被膜、或者利用有機溶劑對該絕緣性微粒子進行溶解而獲得的連續皮膜。如上所述,具有離子性基的絕緣性微粒子容易與本導電性粒子密接,藉此本導電性粒子表面上的被絕緣性微粒子被覆的比例變得充分,並且容易防止絕緣性微粒子自本導電性粒子的剝離。因此,對被覆本導電性粒子的絕緣性微粒子進行加熱或溶解而獲得的連續皮膜的厚度均勻且可提高導電性粒子表面上的被覆比例。In the case where the conductive material has a continuous film of an insulating resin, it is preferably a continuous film obtained by coating the conductive particles with insulating particles having ionic groups on their surfaces and then heating the insulating particles, or a continuous film obtained by dissolving the insulating particles with an organic solvent. As described above, the insulating particles having ionic groups are easily in close contact with the conductive particles, thereby making the proportion of the conductive particles on the surface covered by the insulating particles sufficient, and easily preventing the insulating particles from peeling off from the conductive particles. Therefore, the thickness of the continuous film obtained by heating or dissolving the insulating fine particles covering the conductive particles is uniform, and the coating ratio on the surface of the conductive particles can be increased.

就提高與所述絕緣樹脂的親和性而提高密接性的觀點而言,本導電性粒子亦可利用表面處理劑進行處理。 作為所述表面處理劑,例如可列舉苯並三唑系化合物、鈦系化合物、高級脂肪酸或其衍生物、磷酸酯及亞磷酸酯等。該些可單獨使用,亦可根據需要組合使用多種。 From the viewpoint of improving affinity with the insulating resin and improving adhesion, the conductive particles can also be treated with a surface treatment agent. As the surface treatment agent, for example, benzotriazole compounds, titanium compounds, higher fatty acids or their derivatives, phosphates and phosphites can be listed. These can be used alone or in combination as needed.

所述表面處理劑可與本導電性粒子中的表面進行化學性鍵結,亦可不進行鍵結。表面處理劑只要存在於本導電性粒子的表面即可,在該情況下,可存在於本導電性粒子的整個表面,亦可僅存在於表面的一部分。The surface treatment agent may or may not chemically bond to the surface of the present conductive particle. The surface treatment agent only needs to be present on the surface of the present conductive particle, and in this case, it may be present on the entire surface of the present conductive particle or only on a portion of the surface.

作為所述三唑系化合物,可列舉具有在五員環包括三個氮原子的含氮雜環結構的化合物。Examples of the triazole compound include compounds having a nitrogen-containing heterocyclic structure including three nitrogen atoms in a five-membered ring.

作為三唑系化合物,除可列舉具有不與其他環進行縮合的三唑單環結構的化合物外,亦可列舉具有三唑環與其他環進行縮合而成的環結構的化合物。作為其他環,可列舉苯環、萘環。Examples of triazole compounds include compounds having a triazole monocyclic structure that is not condensed with other rings, and compounds having a ring structure in which a triazole ring is condensed with other rings. Examples of other rings include a benzene ring and a naphthyl ring.

其中,就與絕緣樹脂的密接性優異的方面而言,較佳為具有三唑環與其他環進行縮合而成的環結構的化合物,尤佳為具有三唑環與苯環進行縮合而成的結構的化合物即苯並三唑系化合物。 作為苯並三唑系化合物,可列舉下述通式(4)所表示的化合物。 Among them, compounds having a ring structure formed by condensation of a triazole ring and other rings are preferred in terms of excellent adhesion to insulating resins, and compounds having a structure formed by condensation of a triazole ring and a benzene ring, i.e., benzotriazole compounds, are particularly preferred. As benzotriazole compounds, compounds represented by the following general formula (4) can be cited.

[化4] 所述通式(4)中,R 11為負電荷、氫原子、鹼金屬、可經取代的烷基、胺基、甲醯基、羥基、烷氧基、磺酸基或甲矽烷基,R 12、R 13、R 14及R 15分別獨立地為氫原子、鹵素原子、可經取代的烷基、羧基、羥基或硝基。 [Chemistry 4] In the general formula (4), R 11 is a negative charge, a hydrogen atom, an alkali metal, an alkyl group which may be substituted, an amino group, a formyl group, a hydroxyl group, an alkoxy group, a sulfonic acid group or a silyl group, and R 12 , R 13 , R 14 and R 15 are independently a hydrogen atom, a halogen atom, an alkyl group which may be substituted, a carboxyl group, a hydroxyl group or a nitro group.

作為所述通式(4)中的R 11所表示的鹼金屬,可列舉鋰、鈉、鉀等。R 11所表示的鹼金屬為鹼金屬陽離子,在通式(4)中的R 11為鹼金屬的情況下,R 11與氮原子的鍵結可成為離子鍵。 作為通式(4)中的R 11、R 12、R 13、R 14及R 15所表示的烷基,可列舉碳數1至20的烷基,特佳為碳數1至12。該烷基可經取代,作為取代基,可列舉胺基、烷氧基、羧基、羥基、醛基、硝基、磺酸基、第四級銨基、鋶基、磺醯基、鏻基、氰基、氟烷基、巰基及鹵素原子。 作為R 11所表示的烷氧基,可較佳地列舉碳數為1至12的烷氧基。 另外,作為R 12、R 13、R 14及R 15所表示的烷基的取代基的烷氧基的碳數較佳為1至12。作為通式(4)中的R 12、R 13、R 14及R 15所表示的鹵素原子,可列舉氟原子、氯原子、溴原子、碘原子等。 Examples of the alkali metal represented by R 11 in the general formula (4) include lithium, sodium, potassium, and the like. The alkali metal represented by R 11 is an alkali metal cation, and when R 11 in the general formula (4) is an alkali metal, the bond between R 11 and the nitrogen atom can be an ionic bond. Examples of the alkyl group represented by R 11 , R 12 , R 13 , R 14 , and R 15 in the general formula (4) include alkyl groups having 1 to 20 carbon atoms, and particularly preferably alkyl groups having 1 to 12 carbon atoms. The alkyl group may be substituted, and examples of the substituent include an amino group, an alkoxy group, a carboxyl group, a hydroxyl group, an aldehyde group, a nitro group, a sulfonic acid group, a quaternary ammonium group, a proton group, a sulfonyl group, a phosphonium group, a cyano group, a fluoroalkyl group, an oxirane group, and a halogen atom. As the alkoxy group represented by R 11 , an alkoxy group having a carbon number of 1 to 12 is preferably listed. In addition, the carbon number of the alkoxy group as a substituent of the alkyl group represented by R 12 , R 13 , R 14 and R 15 is preferably 1 to 12. As the halogen atom represented by R 12 , R 13 , R 14 and R 15 in the general formula (4), a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc. are listed.

作為具體的三唑系化合物,作為具有三唑單環結構的化合物,除可列舉:1,2,3-三唑、1,2,4-三唑、3-胺基-1H-1,2,4-三唑、5-巰基-1H-1,2,3-三唑鈉、4-胺基-3-肼基-5-巰基-1,2,4-三唑、3-胺基-5-巰基-1,2,4-三唑外,亦可列舉:具有三唑環與其他環進行縮合而成的環結構的苯並三唑、1-甲基-1H-苯並三唑、4-甲基-1H-苯並三唑、5-甲基-1H-苯並三唑、4-羧基-1H-苯並三唑、5-羧基-1H-苯並三唑、5-乙基-1H-苯並三唑、5-丙基-1H-苯並三唑、5,6-二甲基-1H-苯並三唑、1-胺基苯並三唑、5-硝基苯並三唑、5-氯苯並三唑、4,5,6,7-四溴苯並三唑、1-羥基苯並三唑、1-(甲氧基甲基)-1H-苯並三唑、1H-苯並三唑-1-甲醇、1H-苯並三唑-1-羧基醛、1-(氯甲基)-1H-苯並三唑、1-羥基-6-(三氟甲基)苯並三唑、苯並三唑丁酯、4-羧基-1H-苯並三唑丁酯、4-羧基-1H-苯並三唑辛酯、1-[N,N-雙(2-乙基己基)胺基甲基]甲基苯並三唑、2,2'-[[(甲基-1H-苯並三唑-1-基)甲基]亞胺基]雙乙醇、四丁基鏻苯並三唑鹽、1H-苯並三唑-1-基氧基三(二甲基胺基)鏻六氟磷酸鹽、1H-苯並三唑-1-基氧基三吡咯烷酮鏻六氟磷酸鹽、1-(甲醯胺甲基)-1H-苯並三唑、1-[雙(二甲基胺基)亞甲基]-1H-苯並三唑鎓3-氧化物六氟磷酸鹽、1-[雙(二甲基胺基)亞甲基]-1H-苯並三唑鎓3-氧化物四氟硼酸鹽、(6-氯-1H-苯並三唑-1-基氧基)三吡咯烷酮鏻六氟磷酸鹽、鄰-(苯並三唑-1-基)-N,N,N',N'-雙(四亞甲基)脲鎓六氟磷酸鹽、鄰-(6-氯苯並三唑-1-基)-N,N,N',N'-四甲基脲鎓四氟硼酸鹽、鄰-(6-氯苯並三唑-1-基)-N,N,N',N'-四甲基脲鎓六氟磷酸鹽、鄰-(苯並三唑-1-基)-N,N,N',N'-雙(五亞甲基)脲鎓六氟磷酸鹽、1-(三甲基甲矽烷基)-1H-苯並三唑、1-[2-(三甲基甲矽烷基)乙氧基羰基氧基]苯並三唑、1-(三氟甲磺醯基)-1H-苯並三唑、(三氟乙醯基)苯並三唑、三(1H-苯並三唑-1-基)甲烷、9-(1H-苯並三唑-1-基甲基)-9H-咔唑、[(1H-苯並三唑-1-基)甲基]三苯基氯化鏻、1-(異氰基甲基)-1H-苯並三唑、1-[(9H-芴-9-基甲氧基)羰基氧基]苯並三唑、1,2,3-苯並三唑鈉鹽、萘並三唑等。As specific triazole compounds, compounds having a triazole monocyclic structure include: 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, 5-ol-1H-1,2,3-triazole sodium, 4-amino-3-hydrazino-5-ol-1,2,4-triazole, 3-amino-5-ol-1,2,4-triazole, Other examples include: benzotriazole having a ring structure formed by condensation of a triazole ring and other rings, 1-methyl-1H-benzotriazole, 4-methyl-1H-benzotriazole, 5-methyl-1H-benzotriazole, 4-carboxyl-1H-benzotriazole, 5-carboxyl-1H-benzotriazole, 5-ethyl-1H-benzotriazole, 5-propyl-1H-benzotriazole, 5,6-dimethyl-1H-benzotriazole, 1H-benzotriazole, 1-aminobenzotriazole, 5-nitrobenzotriazole, 5-chlorobenzotriazole, 4,5,6,7-tetrabromobenzotriazole, 1-hydroxybenzotriazole, 1-(methoxymethyl)-1H-benzotriazole, 1H-benzotriazole-1-methanol, 1H-benzotriazole-1-carboxaldehyde, 1-(chloromethyl)-1H-benzotriazole, 1-hydroxy-6-(trifluoromethyl)-1H-benzotriazole, 4-(2-ethylhexyl)aminomethyl)benzotriazole, benzotriazole butyl ester, 4-carboxy-1H-benzotriazole butyl ester, 4-carboxy-1H-benzotriazole octyl ester, 1-[N,N-bis(2-ethylhexyl)aminomethyl]methylbenzotriazole, 2,2'-[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol, tetrabutylphosphonium benzotriazole salt, 1H-benzotriazol-1-yloxy 1-[bis(dimethylamino)methylene]-1H-benzotriazolium 3-oxide hexafluorophosphate, 1-[bis(dimethylamino)methylene]-1H-benzotriazolium 3-oxide tetrafluoroborate, (6-Chloro-1H-benzotriazol-1-yloxy)tripyrrolidonephosphonium hexafluorophosphate, o-(benzotriazol-1-yl)-N,N,N',N'-bis(tetramethylene)uronium hexafluorophosphate, o-(6-chlorobenzotriazol-1-yl)-N,N,N',N'-tetramethyluronium tetrafluoroborate, o-(6-chlorobenzotriazol-1-yl)-N,N,N',N'-tetramethyluronium tetrafluoroborate N'-Tetramethyluronium hexafluorophosphate, o-(Benzotriazol-1-yl)-N,N,N',N'-bis(pentamethylene)uronium hexafluorophosphate, 1-(trimethylsilyl)-1H-benzotriazole, 1-[2-(trimethylsilyl)ethoxycarbonyloxy]benzotriazole, 1-(trifluoromethanesulfonyl)-1H-benzotriazole, (trifluoroacetyl)benzotriazole , tris(1H-benzotriazol-1-yl)methane, 9-(1H-benzotriazol-1-ylmethyl)-9H-carbazole, [(1H-benzotriazol-1-yl)methyl]triphenylphosphonium chloride, 1-(isocyanatomethyl)-1H-benzotriazole, 1-[(9H-fluoren-9-ylmethoxy)carbonyloxy]benzotriazole, 1,2,3-benzotriazole sodium salt, naphthotriazole, etc.

作為所述鈦系化合物,例如就在導電性粒子的表面具有的情況下容易獲得絕緣樹脂與導電性粒子的親和性或容易分散於溶媒中而可均勻地對導電性粒子表面進行處理的方面而言,特佳為具有下述通式(5)所表示的結構的化合物。The titanium compound is particularly preferably a compound having a structure represented by the following general formula (5), for example, in that when the titanium compound is present on the surface of the conductive particles, the affinity between the insulating resin and the conductive particles can be easily obtained or the surface of the conductive particles can be uniformly treated by being easily dispersed in a solvent.

[化5] 所述通式(5)中,R 21為二價或三價的基,R 22為碳原子數2以上且30以下的脂肪族烴基、碳原子數6以上且22以下的芳基或碳原子數7以上且23以下的芳基烷基,p及r分別為1以上且3以下的整數,滿足p+r=4,q為1或2的整數,在R 21為二價的基的情況下,q為1,在R 21為三價的基的情況下,q為2。在q為2的情況下,多個R 22可相同亦可不同。*表示鍵結鍵。 [Chemistry 5] In the general formula (5), R21 is a divalent or trivalent group, R22 is an aliphatic alkyl group having 2 to 30 carbon atoms, an aryl group having 6 to 22 carbon atoms, or an arylalkyl group having 7 to 23 carbon atoms, p and r are integers of 1 to 3, respectively, satisfying p+r=4, q is an integer of 1 or 2, and when R21 is a divalent group, q is 1, and when R21 is a trivalent group, q is 2. When q is 2, multiple R22s may be the same or different. * represents a bond.

作為R 22所表示的碳原子數4以上且28以下的脂肪族烴基的例子,可列舉:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基、二十二烷基等。作為不飽和脂肪族烴基的例子,作為烯基,可列舉:十二烯基、十三烯基、十四烯基、十五烯基、十六烯基、十七烯基、十九烯基、二十烯基(Icosenyl)、二十烯基(Eicosenyl)、二十一烯基、二十二烯基。 作為碳原子數6以上且22以下的芳基,可列舉:苯基、甲苯基、萘基、蒽基等。 作為碳原子數7以上且23以下的芳基烷基,可列舉:苄基、苯乙基、萘基甲基等。 作為疏水性基,特佳為直鏈狀或支鏈狀的脂肪族烴基,尤佳為直鏈狀的脂肪族烴基。 就提高絕緣樹脂與導電性粒子的親和性的方面而言,關於作為疏水性基的脂肪族烴基,特別是,進而佳為碳原子數4以上且28以下的基,最佳為6以上且24以下的基。 Examples of the aliphatic alkyl group having 4 to 28 carbon atoms represented by R 22 include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, heneicosyl, and docosyl. Examples of the unsaturated aliphatic alkyl group include alkenyl, dodecenyl, tridecenyl, tetradecenyl, pentadecyl, hexadecyl, heptadecyl, nonadecyl, icosenyl, eicosenyl, heneicosenyl, and docosenyl. Examples of the aryl group having 6 to 22 carbon atoms include phenyl, tolyl, naphthyl, anthracenyl, and the like. Examples of the arylalkyl group having 7 to 23 carbon atoms include benzyl, phenethyl, naphthylmethyl, and the like. As the hydrophobic group, a linear or branched aliphatic hydrocarbon group is particularly preferred, and a linear aliphatic hydrocarbon group is particularly preferred. In terms of improving the affinity between the insulating resin and the conductive particles, the aliphatic hydrocarbon group as the hydrophobic group is particularly preferably a group having 4 to 28 carbon atoms, and most preferably a group having 6 to 24 carbon atoms.

作為R 21所表示的二價的基,可列舉:-O-、-COO-、-OCO-、-OSO 2-等。作為R 21所表示的三價的基,可列舉:-P(OH)(O-) 2、-OPO(OH)-OPO(O-) 2等。 Examples of the divalent group represented by R21 include -O-, -COO-, -OCO-, and -OSO2- . Examples of the trivalent group represented by R21 include -P(OH)(O-) 2 , -OPO(OH)-OPO(O-) 2 , and the like.

在所述通式(5)中,*為鍵結鍵,該鍵結鍵可與導電性粒子的金屬皮膜進行鍵結,或者亦可與其他基等進行鍵結。作為該情況下的其他基等,例如可列舉烴基,具體而言,可列舉碳原子數1以上且12以下的烷基。In the general formula (5), * is a bond, and the bond may be bonded to the metal film of the conductive particle or may be bonded to other groups. Examples of other groups in this case include alkyl groups, and specifically, alkyl groups having 1 to 12 carbon atoms.

作為具有通式(5)所表示的結構的鈦系化合物,就獲取容易性或可不會損害導電性粒子的導電特性地進行處理的方面而言,較佳為具有通式(5)中的R 21為二價的基的結構的化合物。在通式(5)中,R 21為二價的基的結構由下述通式(6)表示。 As the titanium compound having a structure represented by the general formula (5), a compound having a structure in which R 21 in the general formula (5) is a divalent group is preferred in terms of ease of acquisition or handling without damaging the conductive properties of the conductive particles. In the general formula (5), a structure in which R 21 is a divalent group is represented by the following general formula (6).

[化6] 所述通式(6)中,R 21為選自-O-、-COO-、-OCO-、-OSO 2-中的基,p、r及R 22與通式(II)為相同含義。 [Chemistry 6] In the general formula (6), R 21 is a group selected from -O-, -COO-, -OCO-, and -OSO 2 -, and p, r, and R 22 have the same meanings as in the general formula (II).

在通式(5)及通式(6)中,就提高絕緣樹脂與導電層的密接性的觀點而言,r較佳為2或3,最佳為r為3。In general formula (5) and general formula (6), from the viewpoint of improving the adhesion between the insulating resin and the conductive layer, r is preferably 2 or 3, and most preferably r is 3.

作為所述表面處理中使用的鈦酸酯系化合物的具體例,可列舉:異丙基三異硬脂醯基鈦酸酯、異丙基三-十二烷基苯磺醯基鈦酸酯、異丙基三(二辛基焦磷酸酯)鈦酸酯、四異丙基(二辛基亞磷酸酯)鈦酸酯、四異丙基雙(二辛基亞磷酸酯)鈦酸酯、四辛基雙(二-十三烷基亞磷酸酯)鈦酸酯、四(2,2-二烯丙基氧基甲基-1-丁基)雙(二-十三烷基)亞磷酸鈦酸酯、雙(二辛基焦磷酸酯)氧乙酸鈦酸酯、雙(二辛基焦磷酸酯)乙烯鈦酸酯等,該些可使用一種或兩種以上。 再者,該些鈦酸酯系化合物例如由味之素精密技術股份有限公司來進行市售。 Specific examples of titanium ester compounds used in the surface treatment include: isopropyl triisostearate titanium ester, isopropyl tri-dodecylbenzenesulfonyl titanium ester, isopropyl tri(dioctyl pyrophosphate) titanium ester, tetraisopropyl(dioctyl phosphite) titanium ester, tetraisopropyl bis(dioctyl phosphite) titanium ester, tetraoctyl bis(di-tridecyl phosphite) titanium ester, tetrakis(2,2-diallyloxymethyl-1-butyl)bis(di-tridecyl) titanium phosphite, bis(dioctyl pyrophosphate) oxyacetic titanium ester, bis(dioctyl pyrophosphate) ethylene titanium ester, etc. One or more of these can be used. Furthermore, these titanium ester compounds are commercially available, for example, from Ajinomoto Precision Technology Co., Ltd.

作為高級脂肪酸,較佳為飽和或不飽和的直鏈或支鏈的單羧酸或多羧酸,進而佳為飽和或不飽和的直鏈或支鏈的單羧酸,進而佳為飽和或不飽和的直鏈單羧酸。脂肪酸的碳數較佳為7以上。另外,所謂衍生物,是指所述脂肪酸的鹽或醯胺。As the higher fatty acid, preferably, it is a saturated or unsaturated straight chain or branched monocarboxylic acid or polycarboxylic acid, more preferably, it is a saturated or unsaturated straight chain or branched monocarboxylic acid, more preferably, it is a saturated or unsaturated straight chain monocarboxylic acid. The carbon number of the fatty acid is preferably 7 or more. In addition, the so-called derivative refers to the salt or amide of the fatty acid.

所述表面處理中使用的高級脂肪酸或其衍生物中,高級脂肪酸的碳數較佳為7至23,進而佳為10至20。作為此種高級脂肪酸或其衍生物,例如可列舉:癸酸、月桂酸、肉豆蔻酸、棕櫚酸、硬脂酸等飽和脂肪酸、油酸、亞麻油酸、次亞麻油酸、花生四烯酸等不飽和脂肪酸、或者該些的金屬鹽或醯胺等。作為高級脂肪酸的金屬鹽,可列舉鹼金屬、鹼土金屬、Zr、Cr、Mn、Fe、Co、Ni、Cu、Ag等過渡金屬、及Al、Zn等過渡金屬以外的其他金屬的鹽,較佳為Al、Zn、W、V等多價金屬鹽。高級脂肪酸金屬鹽根據金屬的價數而可為單體、二體、三體、四體等。高級脂肪酸金屬鹽可為該些的任意組合。In the higher fatty acid or its derivative used in the surface treatment, the carbon number of the higher fatty acid is preferably 7 to 23, and more preferably 10 to 20. As such higher fatty acid or its derivative, for example, saturated fatty acids such as capric acid, lauric acid, myristic acid, palmitic acid, and stearic acid, unsaturated fatty acids such as oleic acid, linolenic acid, linolenic acid, and arachidonic acid, or metal salts or amides thereof, etc. As metal salts of higher fatty acids, alkali metals, alkaline earth metals, transition metals such as Zr, Cr, Mn, Fe, Co, Ni, Cu, and Ag, and salts of other metals other than transition metals such as Al and Zn can be cited, preferably polyvalent metal salts such as Al, Zn, W, and V. The higher fatty acid metal salt may be a monomer, a dimer, a trimer, a tetramer, etc. according to the valence of the metal. The higher fatty acid metal salt may be any combination of these.

作為磷酸酯及亞磷酸酯,可較佳地使用具有碳數6至22的烷基者。 作為磷酸酯,例如可列舉:磷酸己酯、磷酸庚酯、磷酸單辛酯、磷酸單壬酯、磷酸單癸酯、磷酸單十一烷基酯、磷酸單十二烷基酯、磷酸單十三烷基酯、磷酸單十四烷基酯、磷酸單十五烷基酯等。 作為亞磷酸酯,例如可列舉:亞磷酸己酯、亞磷酸庚酯、亞磷酸單辛酯、亞磷酸單壬酯、亞磷酸單癸酯、亞磷酸單十一烷基酯、亞磷酸單十二烷基酯、亞磷酸單十三烷基酯、亞磷酸單十四烷基酯、亞磷酸單十五烷基酯等。 As phosphates and phosphites, those having an alkyl group with a carbon number of 6 to 22 can be preferably used. As phosphates, for example, hexyl phosphate, heptyl phosphate, monooctyl phosphate, monononyl phosphate, monodecyl phosphate, monoundecyl phosphate, monododecyl phosphate, monotridecyl phosphate, monotetradecyl phosphate, monopentadecyl phosphate, etc. can be listed. As phosphites, for example, hexyl phosphite, heptyl phosphite, monooctyl phosphite, monononyl phosphite, monodecyl phosphite, monoundecyl phosphite, monododecyl phosphite, monotridecyl phosphite, monotetradecyl phosphite, monopentadecyl phosphite, etc. can be listed.

就與絕緣樹脂的親和性優異,另外,提高絕緣樹脂的被覆率的效果的觀點而言,所述表面處理中使用的表面處理劑較佳為三唑系化合物、鈦系化合物,特佳為苯並三唑、4-羧基苯並三唑、異丙基三異硬脂醯基鈦酸酯、四異丙基(二辛基亞磷酸酯)鈦酸酯。From the viewpoint of excellent affinity with the insulating resin and the effect of improving the coverage of the insulating resin, the surface treatment agent used in the surface treatment is preferably a triazole compound or a titanium compound, and particularly preferably benzotriazole, 4-carboxybenzotriazole, isopropyl triisostearate titanium ester, and tetraisopropyl (dioctyl phosphite) titanium ester.

藉由表面處理劑對本導電性粒子進行處理的方法是將本導電性粒子在表面處理劑的溶液中分散後,進行過濾而獲得。在利用表面處理劑進行處理之前,本導電性粒子可利用其他處理劑進行處理,亦可為未處理。 分散有本導電性粒子的表面處理劑的溶液中的表面處理劑的濃度例如為0.01質量%以上且10.0質量%以下。另外,表面處理劑的溶液的溶媒可列舉:水、甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、異丁醇、異戊醇、環己醇等醇類、丙酮、甲基異丁基酮、甲基乙基酮、甲基-正丁基酮等酮類、乙酸甲酯、乙酸乙酯等酯類、二乙醚、乙二醇單乙醚等醚類、正己烷、環己酮、甲苯、1,4-二噁烷、N,N-二甲基甲醯胺、四氫呋喃等。進行了分散、過濾的表面處理後的本導電性粒子較佳為再次分散於溶媒中以去除過剩的表面處理劑。 The method of treating the conductive particles with a surface treatment agent is to disperse the conductive particles in a solution of the surface treatment agent and then filter the solution. Before the surface treatment agent is used, the conductive particles may be treated with other treatment agents or may be untreated. The concentration of the surface treatment agent in the solution of the surface treatment agent in which the conductive particles are dispersed is, for example, 0.01 mass % or more and 10.0 mass % or less. In addition, the solvent of the surface treatment agent solution can be listed as follows: water, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutanol, isoamyl alcohol, cyclohexanol and other alcohols, acetone, methyl isobutyl ketone, methyl ethyl ketone, methyl-n-butyl ketone and other ketones, methyl acetate, ethyl acetate and other esters, diethyl ether, ethylene glycol monoethyl ether and other ethers, n-hexane, cyclohexanone, toluene, 1,4-dioxane, N,N-dimethylformamide, tetrahydrofuran and the like. The conductive particles after the surface treatment of dispersion and filtration are preferably dispersed again in the solvent to remove excess surface treatment agent.

本導電性粒子的利用表面處理劑的表面處理可藉由在室溫下將本導電性粒子與表面處理劑及溶媒加以混合來進行處理。或者,亦可將本導電性粒子與表面處理劑在溶媒中加以混合後,進行加熱而促進反應。加熱溫度例如為30℃以上且50℃以下。The surface treatment of the conductive particles with the surface treatment agent can be carried out by mixing the conductive particles with the surface treatment agent and a solvent at room temperature. Alternatively, the conductive particles and the surface treatment agent can be mixed in a solvent and then heated to promote the reaction. The heating temperature is, for example, 30° C. or higher and 50° C. or lower.

本導電性粒子的連接電阻低且連接可靠性亦優異,因此例如較佳地用作用於將各向異性導電膜(Anisotropic Conductive Film,ACF)或熱壓密封連接器(Heat Seal Connector,HSC)、液晶顯示面板的電極連接於驅動用LSI晶片的電路基板的導電性材料。作為導電性材料,可直接使用本導電性粒子,亦可將本導電性粒子分散於黏合劑樹脂中而作為導電性材料。另外,作為導電性材料,可直接使用本導電性材料,亦可將本導電性材料分散於黏合劑樹脂中而使用。導電性材料的其他形態並無特別限定,除所述形態以外,例如可列舉各向異性導電膏、導電性黏接劑、各向異性導電油墨等形態。The conductive particles have low connection resistance and excellent connection reliability, so they are preferably used as conductive materials for connecting the electrodes of anisotropic conductive film (ACF) or heat seal connector (HSC) or liquid crystal display panel to a circuit substrate for driving LSI chips. As a conductive material, the conductive particles can be used directly, or the conductive particles can be dispersed in an adhesive resin to be used as a conductive material. In addition, as a conductive material, the conductive material can be used directly, or the conductive material can be dispersed in an adhesive resin for use. Other forms of the conductive material are not particularly limited. In addition to the above forms, for example, anisotropic conductive paste, conductive adhesive, anisotropic conductive ink and the like can be listed.

作為所述黏合劑樹脂,可列舉熱塑性樹脂或熱硬化性樹脂等。作為熱塑性樹脂,例如可列舉:丙烯酸樹脂、苯乙烯樹脂、乙烯-乙酸乙烯酯樹脂、苯乙烯-丁二烯嵌段共聚物等,作為熱硬化性樹脂,例如可列舉:環氧樹脂、酚樹脂、尿素樹脂、聚酯樹脂、胺基甲酸酯樹脂、聚醯亞胺樹脂等。Examples of the adhesive resin include thermoplastic resins and thermosetting resins. Examples of the thermoplastic resins include acrylic resins, styrene resins, ethylene-vinyl acetate resins, and styrene-butadiene block copolymers, and examples of the thermosetting resins include epoxy resins, phenol resins, urea resins, polyester resins, urethane resins, and polyimide resins.

所述導電性材料除可調配本發明的導電性粒子及黏合劑樹脂以外,亦可根據需要調配黏接賦予劑、反應性助劑、環氧樹脂硬化劑、金屬氧化物、光起始劑、增感劑、硬化劑、硫化劑、防劣化劑、耐熱添加劑、熱傳導提高劑、軟化劑、著色劑、各種偶合劑或金屬減活劑等。In addition to the conductive particles and adhesive resin of the present invention, the conductive material can also be formulated with adhesive agents, reactive additives, epoxy resin hardeners, metal oxides, photoinitiators, sensitizers, hardeners, vulcanizers, anti-deterioration agents, heat-resistant additives, thermal conductivity enhancers, softeners, colorants, various coupling agents or metal deactivators, etc. as needed.

在所述導電性材料中,導電性粒子的使用量只要根據用途適宜決定即可,就導電性粒子彼此不接觸而容易獲得電性導通的觀點而言,例如相對於導電性材料100質量份而較佳為0.01質量份以上且50質量份以下、特別是0.03質量份以上且40質量份以下。In the conductive material, the amount of conductive particles used can be appropriately determined according to the intended use. From the viewpoint of easily obtaining electrical conduction without the conductive particles contacting each other, the amount is preferably 0.01 parts by mass to 50 parts by mass, and particularly preferably 0.03 parts by mass to 40 parts by mass, relative to 100 parts by mass of the conductive material.

本發明的導電性粒子在所述導電性材料的形態中,亦特別較佳地用作導電性黏接劑的導電性填料。The conductive particles of the present invention in the form of the conductive material are also particularly preferably used as conductive fillers in conductive adhesives.

所述導電性黏接劑較佳地用作配置於形成有導電性基材的兩張基板之間,並藉由加熱加壓將所述導電性基材黏接並進行導通的各向異性導電性黏接劑。該各向異性導電性黏接劑包含本發明的導電性粒子與黏接劑樹脂。作為黏接劑樹脂,只要是絕緣性且用作黏接劑樹脂者,則可並無特別限制地使用。可為熱塑性樹脂及熱硬化性中的任一種,較佳為藉由加熱顯現出黏接性能者。此種黏接劑樹脂例如有熱塑性類型、熱硬化性類型、紫外線硬化類型等。另外,有顯示出熱塑性類型與熱硬化性類型的中間性質的所謂的半熱硬化性類型、熱硬化性類型與紫外線硬化類型的複合類型等。該些黏接劑樹脂可根據作為被黏對象的電路基板等的表面特性或使用形態適宜選擇。就黏接後的材料強度優異的方面而言,特佳為包含熱硬化性樹脂而構成的黏接劑樹脂。The conductive adhesive is preferably used as an anisotropic conductive adhesive that is arranged between two substrates formed with a conductive base material, and the conductive base materials are bonded and conducted by heating and pressurizing. The anisotropic conductive adhesive contains the conductive particles of the present invention and an adhesive resin. As the adhesive resin, any one that is insulating and can be used as an adhesive resin can be used without particular limitation. It can be any one of a thermoplastic resin and a thermosetting resin, and preferably one that exhibits adhesive properties by heating. Such adhesive resins include, for example, thermoplastic type, thermosetting type, ultraviolet curing type, and the like. In addition, there are so-called semi-thermosetting types that show intermediate properties between thermoplastic types and thermosetting types, and composite types of thermosetting types and ultraviolet curing types. These adhesive resins can be appropriately selected according to the surface characteristics of the circuit board or the form of use as the object to be bonded. In terms of excellent material strength after bonding, an adhesive resin composed of a thermosetting resin is particularly preferred.

作為黏接劑樹脂,具體而言,可列舉將藉由選自乙烯-乙酸乙烯酯共聚物、羧基改質乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸異丁酯共聚物、聚醯胺、聚醯亞胺、聚酯、聚乙烯醚、聚乙烯丁醛、聚胺基甲酸酯、苯乙烯-丁二烯-苯乙烯(Styrene-Butadiene-Styrene,SBS)嵌段共聚物、羧基改質SBS共聚物、苯乙烯-異戊二烯-苯乙烯(Styrene-Isoprene-Styrene,SIS)共聚物、苯乙烯-乙烯-丁二烯-苯乙烯(Styrene-Ethylene-Butylene-Styrene,SEBS)共聚物、馬來酸改質SEBS共聚物、聚丁二烯橡膠、氯丁二烯橡膠、羧基改質氯丁二烯橡膠、苯乙烯-丁二烯橡膠、異丁烯-異戊二烯共聚物、丙烯腈-丁二烯橡膠(以下,表示為NBR)、羧基改質丁腈橡膠(Nitrile Butadiene Rubber,NBR)、胺改質NBR、環氧樹脂、環氧酯樹脂、丙烯酸樹脂、酚樹脂或矽酮樹脂等中的一種或兩種以上的組合而獲得者作為主劑來製備的物質。該些中,作為熱塑性樹脂,苯乙烯-丁二烯橡膠或SEBS等由於二次加工性優異而較佳。作為熱硬化性樹脂,較佳為環氧樹脂。該些中,就黏接力高、耐熱性、電絕緣性優異、而且熔融黏度低、能夠以低壓力連接的優點而言,最佳為環氧樹脂。As the adhesive resin, specifically, there can be mentioned a resin selected from ethylene-vinyl acetate copolymer, carboxyl modified ethylene-vinyl acetate copolymer, ethylene-isobutyl acrylate copolymer, polyamide, polyimide, polyester, polyvinyl ether, polyvinyl butyral, polyurethane, styrene-butadiene-styrene (SBS) block copolymer, carboxyl modified SBS copolymer, styrene-isoprene-styrene (Styrene-Isoprene) A material prepared by using as a main agent one or a combination of two or more of the following: acrylonitrile-butadiene rubber (hereinafter referred to as NBR), carboxyl-modified nitrile rubber (Nitrile Butadiene Rubber, NBR), amine-modified NBR, epoxy resin, epoxy ester resin, acrylic resin, phenolic resin or silicone resin. Among these, styrene-butadiene rubber or SEBS are preferred as thermoplastic resins due to their excellent secondary processability. Epoxy resin is preferred as thermosetting resin. Among these, epoxy resin is the best in terms of its high adhesiveness, heat resistance, excellent electrical insulation, low melt viscosity, and ability to connect at low pressure.

作為所述環氧樹脂,只要是一分子中具有兩個以上的環氧基的多元環氧樹脂,則能夠使用一般所使用的環氧樹脂。作為具體的物質,可例示:苯酚酚醛清漆、甲酚酚醛清漆等酚醛清漆樹脂、雙酚A、雙酚F、雙酚AD、間苯二酚、雙羥基二苯醚等多元酚類、乙二醇、新戊二醇、甘油、三羥甲基丙烷、聚丙二醇等多元醇類、乙二胺、三乙四胺、苯胺等聚胺基化合物、己二酸、鄰苯二甲酸、間苯二甲酸等多元羧基化合物等與表氯醇或2-甲基表氯醇進行反應而獲得的縮水甘油型的環氧樹脂。另外,可列舉:二環戊二烯環氧化物、丁二烯二聚體二環氧化物等脂肪族及脂環族環氧樹脂等。該些可單獨使用一種或混合使用兩種以上。As the epoxy resin, any commonly used epoxy resin can be used as long as it is a polyvalent epoxy resin having two or more epoxy groups in one molecule. Specific examples include: phenol novolac resins such as cresol novolac, polyphenols such as bisphenol A, bisphenol F, bisphenol AD, resorcinol, dihydroxydiphenyl ether, polyols such as ethylene glycol, neopentyl glycol, glycerol, trihydroxymethylpropane, polypropylene glycol, polyamino compounds such as ethylenediamine, triethylenetetramine, aniline, polycarboxyl compounds such as adipic acid, phthalic acid, isophthalic acid, etc., and glycidyl epoxy resins obtained by reacting epichlorohydrin or 2-methylepichlorohydrin. In addition, there can be mentioned aliphatic and alicyclic epoxy resins such as dicyclopentadiene epoxide and butadiene dimer diepoxide, etc. These can be used alone or in combination of two or more.

再者,作為所述各種黏接樹脂,就防止離子遷移的觀點而言,較佳為使用減少了Na +或Cl -等雜質離子或水解性氯等的高純度品種。 Furthermore, as the various adhesive resins mentioned above, from the viewpoint of preventing ion migration, it is preferable to use high-purity varieties in which impurity ions such as Na + or Cl - or hydrolyzable chlorine are reduced.

各向異性導電性黏接劑中的導電性粒子的使用量相對於黏接劑樹脂成分100質量份而通常為0.1質量份至30質量份,較佳為0.5質量份至25質量份,更佳為1質量份至20質量份。藉由導電性粒子的使用量處於該範圍內,可抑制連接電阻或熔融黏度變高,提高連接可靠性,從而充分確保連接的各向異性。The amount of the conductive particles in the anisotropic conductive adhesive is generally 0.1 to 30 parts by mass, preferably 0.5 to 25 parts by mass, and more preferably 1 to 20 parts by mass, relative to 100 parts by mass of the adhesive resin component. When the amount of the conductive particles is within this range, the connection resistance or melt viscosity can be suppressed from increasing, the connection reliability can be improved, and the anisotropy of the connection can be fully ensured.

所述各向異性導電性黏接劑中,除可調配上文所述的導電性粒子及黏接劑樹脂外,亦可調配該技術領域中公知的添加劑。其調配量亦可設為在該技術領域中公知的範圍內。作為其他添加劑,例如可例示:黏著賦予劑、反應性助劑、環氧樹脂硬化劑、金屬氧化物、光起始劑、增感劑、硬化劑、硫化劑、防劣化劑、耐熱添加劑、熱傳導提高劑、軟化劑、著色劑、各種偶合劑或金屬減活劑等。In the anisotropic conductive adhesive, in addition to the conductive particles and adhesive resin described above, additives known in the art may also be formulated. The formulation amount may also be set within a range known in the art. Examples of other additives include: adhesion agents, reactive additives, epoxy resin hardeners, metal oxides, photoinitiators, sensitizers, hardeners, vulcanizers, anti-degradation agents, heat-resistant additives, thermal conductivity enhancers, softeners, colorants, various coupling agents or metal deactivators, etc.

作為黏著賦予劑,例如可列舉:松香、松香衍生物、萜烯樹脂、萜烯酚樹脂、石油樹脂、香豆酮-茚樹脂、苯乙烯系樹脂、異戊二烯系樹脂、烷基酚樹脂、二甲苯樹脂等。作為反應性助劑即交聯劑,例如可列舉:多元醇、異氰酸酯類、三聚氰胺樹脂、脲樹脂、六亞甲四胺(urotropine)類、胺類、酸酐、過氧化物等。作為環氧樹脂硬化劑,只要是一分中具有兩個以上的活性氫的物質則可並無特別限制地使用。作為具體的物質,例如可列舉:二乙三胺、三乙四胺、間苯二胺、二氰二胺、聚醯胺胺等聚胺基化合物;鄰苯二甲酸酐、甲基納迪克酸酐、六氫鄰苯二甲酸酐、均苯四甲酸酐等有機酸酐;苯酚酚醛清漆、甲酚酚醛清漆等酚醛清漆樹脂等。該些可單獨使用一種或混合使用兩種以上。另外,亦可根據需要使用潛在性硬化劑。作為可使用的潛在性硬化劑,例如可列舉咪唑系、醯肼系、三氟化硼-胺錯合物、鋶鹽、胺醯亞胺、多胺的鹽、二氰二胺等及該些的改質物。該些可單獨使用一種或作為兩種以上的混合體使用。Examples of adhesive agents include rosin, rosin derivatives, terpene resins, terpene phenol resins, petroleum resins, coumarone-indene resins, styrene resins, isoprene resins, alkylphenol resins, xylene resins, etc. Examples of reactive auxiliary agents, i.e., crosslinking agents, include polyols, isocyanates, melamine resins, urea resins, hexamethylenetetramine (urotropine), amines, acid anhydrides, peroxides, etc. As epoxy resin hardeners, any substance having two or more active hydrogen atoms per molecule can be used without particular limitation. Specific examples of the substance include polyamine compounds such as diethylenetriamine, triethylenetetramine, metaphenylenediamine, dicyandiamide, and polyamide; organic anhydrides such as phthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride, and pyromellitic anhydride; and phenolic novolac resins such as phenol novolac and cresol novolac. These can be used alone or in combination of two or more. In addition, a latent curing agent can be used as needed. Examples of the latent curing agent that can be used include imidazole series, hydrazide series, boron trifluoride-amine complex, coronium salt, amine imide, salt of polyamine, dicyandiamide, and modified products of these. These can be used alone or in combination of two or more.

所述各向異性導電性黏接劑是使用該技術領域中通常使用的製造裝置來製造。例如,調配導電性粒子及黏接劑樹脂以及根據需要的硬化劑或各種添加劑,在黏接劑樹脂為熱硬化性樹脂的情況下在有機溶媒中進行混合,藉此在熱塑性樹脂的情況下在黏接劑樹脂的軟化點以上的溫度下,具體而言較佳為約50℃至130℃左右,進而佳為約60℃至110℃左右進行熔融混煉,藉此進行製造。如此獲得的各向異性導電性黏接劑可塗佈,亦可製成膜狀而應用。The anisotropic conductive adhesive is manufactured using a manufacturing device commonly used in the art. For example, conductive particles and adhesive resin and a hardener or various additives as needed are mixed in an organic solvent when the adhesive resin is a thermosetting resin, and then melt-kneaded at a temperature above the softening point of the adhesive resin, preferably about 50°C to 130°C, and more preferably about 60°C to 110°C, in the case of a thermoplastic resin, to manufacture the anisotropic conductive adhesive. The anisotropic conductive adhesive obtained in this way can be applied or made into a film for application.

本發明的連接結構體是藉由使用本發明的導電性粒子或本發明的導電性材料將兩個電路基板彼此連接而獲得者。作為所述連接結構體的形態,例如可列舉撓性印刷基板與玻璃基板的連接結構體、半導體晶片與撓性印刷基板的連接結構體、半導體晶片與玻璃基板的連接結構體等。 [實施例] The connection structure of the present invention is obtained by connecting two circuit substrates to each other using the conductive particles of the present invention or the conductive material of the present invention. Examples of the connection structure include a connection structure of a flexible printed circuit board and a glass substrate, a connection structure of a semiconductor chip and a flexible printed circuit board, and a connection structure of a semiconductor chip and a glass substrate. [Example]

以下,藉由實施例對本發明進一步進行說明。然而,本發明的範圍並不限定於該些實施例。The present invention is further described below by way of embodiments. However, the scope of the present invention is not limited to these embodiments.

例子中的特性藉由下述方法進行測定。 (1)平均粒徑 自作為測定對象的掃描型電子顯微鏡(SEM)照片中任意提取200個粒子,以倍率10,000倍對粒徑進行測定,並將其算術平均值設為平均粒徑。 (2)導電層的厚度 將導電性粒子切斷成兩個,利用掃描型電子顯微鏡(SEM)對其切口的剖面進行觀察並測定。 (3)突起部的高度的偏差 關於藉由SEM觀察而觀察到的導電性粒子的剖面,對突起部的高度進行測量,並藉由下述式(1)求出。 (4)曲率半徑 就藉由SEM觀察而觀察到的導電性粒子的剖面而言,將與各突起部的剖面的頭頂部分外接的外接圓的半徑設為Ra,將與導電層的下層的表面外接的外接圓的半徑設為Rb進行了測量。 (5)導電性粒子的投影面積及突起部的頭頂部分的面積 藉由將導電性粒子的SEM照片圖像取入至自動圖像分析裝置(尼利可(NIRECO)股份有限公司製造,路澤庫斯(Luzex)(註冊商標)AP)進行測定。 The properties in the examples were measured by the following methods. (1) Average particle size 200 particles were randomly selected from a scanning electron microscope (SEM) photograph of the measured object, and the particle size was measured at a magnification of 10,000 times. The arithmetic mean value was set as the average particle size. (2) Thickness of the conductive layer The conductive particles were cut into two pieces, and the cross section of the cut was observed and measured using a scanning electron microscope (SEM). (3) Deviation in the height of the protrusion The height of the protrusion was measured for the cross section of the conductive particles observed by SEM observation, and was calculated using the following formula (1). (4) Curvature radius For the cross section of the conductive particles observed by SEM observation, the radius of the circumscribed circle circumscribing the top portion of the cross section of each protrusion was set as Ra, and the radius of the circumscribed circle circumscribing the surface of the lower layer of the conductive layer was set as Rb. (5) The projected area of the conductive particles and the area of the top portion of the protrusion were measured by taking the SEM photograph image of the conductive particles into an automatic image analyzer (manufactured by NIRECO Co., Ltd., Luzex (registered trademark) AP).

〔實施例1〕 (1)芯材粒子的前處理 使用平均粒徑2.0 μm的球狀苯乙烯-丙烯酸酯-二氧化矽複合系樹脂粒子作為芯材粒子。將其9 g一邊進行攪拌一邊投入至200 mL的整孔劑水溶液(羅門哈斯(Roam&Haas)電子材料製造的「清潔整孔劑231」)中。整孔劑水溶液的濃度為40 mL/L。緊接著,在液溫60℃下一邊施加超音波一邊攪拌30分鐘而進行芯材粒子的表面改質及分散處理。對該水溶液進行過濾,並將經一次再製漿水洗後的芯材粒子製成200 mL的漿料。向該漿料中投入氯化亞錫0.1 g。在常溫下攪拌5分鐘,進行使錫離子吸附至芯材粒子的表面的敏感化處理。緊接著,對該水溶液進行過濾,將經一次再製漿水洗後的芯材粒子製成200 mL的漿料並維持為60℃。向該漿料中投入0.11 mol/L的氯化鈀水溶液1.5 mL。在60℃下攪拌5分鐘,進行在芯材粒子的表面捕捉鈀離子的活化處理。緊接著,對該水溶液進行過濾,將經一次再製漿熱水洗後的芯材粒子製成100 mL的漿料,加入0.5 g/L的二甲基胺硼烷水溶液10 mL,一邊施加超音波一邊攪拌2分鐘,從而獲得前處理完畢的芯材粒子的漿料。 [Example 1] (1) Pretreatment of core particles Spherical styrene-acrylate-silica composite resin particles with an average particle size of 2.0 μm were used as core particles. 9 g of the particles were added to 200 mL of a pore-forming agent aqueous solution ("Clean Pore-Forming Agent 231" manufactured by Roam & Haas Electronic Materials) while being stirred. The concentration of the pore-forming agent aqueous solution was 40 mL/L. Subsequently, the surface of the core particles was modified and dispersed by applying ultrasonic waves at a liquid temperature of 60°C while being stirred for 30 minutes. The aqueous solution was filtered, and the core particles were washed with water once to prepare a slurry of 200 mL. 0.1 g of stannous chloride was added to the slurry. Stir for 5 minutes at room temperature to perform a sensitization treatment to adsorb tin ions on the surface of the core particles. Next, filter the aqueous solution, make 200 mL of slurry from the core particles after re-slurrying and water washing and maintain it at 60°C. Add 1.5 mL of 0.11 mol/L aqueous solution of palladium chloride to the slurry. Stir for 5 minutes at 60°C to perform an activation treatment to capture palladium ions on the surface of the core particles. Next, filter the aqueous solution, make 100 mL of slurry from the core particles after re-slurrying and hot water washing, add 10 mL of 0.5 g/L dimethylamine borane aqueous solution, and stir for 2 minutes while applying ultrasound to obtain a slurry of core particles that have been pre-treated.

(2)電鍍液的製備 製備包含對5 g/L的酒石酸鈉、2 g/L的硫酸鎳六水合物、10 g/L的檸檬酸三鈉、0.1 g/L的次磷酸鈉、及2 g/L的聚乙二醇進行溶解而得的水溶液的3 L的無電解鍍鎳-磷液,並升溫至70℃。 (2) Preparation of electroplating solution Prepare 3 L of electroless nickel-phosphorus plating solution containing an aqueous solution of 5 g/L sodium tartrate, 2 g/L nickel sulfate hexahydrate, 10 g/L trisodium citrate, 0.1 g/L sodium hypophosphite, and 2 g/L polyethylene glycol, and heat to 70°C.

(3)無電解電鍍處理 向該無電解電鍍浴中投入所述前處理完畢的芯材粒子的漿料,並攪拌5分鐘,確認到氫的發泡停止。在該漿料中,以添加速度均設為2.5 mL/分鐘並藉由計量泵連續地分別添加224 g/L的硫酸鎳水溶液420 mL、及包含210 g/L的次磷酸鈉及80 g/L的氫氧化鈉的混合水溶液420 mL,開始進行無電解電鍍。在分別添加硫酸鎳水溶液、次磷酸鈉及氫氧化鈉的混合水溶液的總量後,一邊保持70℃的溫度一邊繼續攪拌5分鐘。接著對液體進行過濾,將過濾物清洗三次後,利用110℃的真空乾燥機進行乾燥,從而獲得具有突起部的導電性粒子。 (3) Electroless plating treatment The slurry of the core particles that had been pre-treated was added to the electroless plating bath and stirred for 5 minutes until the bubbling of hydrogen stopped. 420 mL of a 224 g/L nickel sulfate aqueous solution and 420 mL of a mixed aqueous solution containing 210 g/L sodium hypophosphite and 80 g/L sodium hydroxide were added to the slurry at a rate of 2.5 mL/min by a metering pump, and electroless plating was started. After the total amount of the nickel sulfate aqueous solution, sodium hypophosphite, and the mixed aqueous solution of sodium hydroxide were added, stirring was continued for 5 minutes while maintaining a temperature of 70°C. The liquid is then filtered, the filtrate is washed three times, and then dried in a vacuum dryer at 110°C to obtain conductive particles with protrusions.

(4)突起部處理 將所獲得的導電性粒子與氧化鋁球一起以20 g放入球磨機容器中,加入乙醇,以80 rpm破碎6小時後,將球與漿料加以分離,利用110℃的真空乾燥機進行乾燥,從而獲得突起部高度低的導電性粒子。所獲得的導電性粒子的突起部高度為100.8 nm。 (4) Treatment of protrusions The obtained conductive particles and alumina balls were placed in a ball mill container at a weight of 20 g, ethanol was added, and the mixture was crushed at 80 rpm for 6 hours. The balls and slurry were separated and dried in a vacuum dryer at 110°C to obtain conductive particles with low protrusion height. The protrusion height of the obtained conductive particles was 100.8 nm.

(5)真空加熱處理 將所獲得的導電性粒子以成為5 mm的厚度的方式放入至方形狀的容器內。將其放入至真空加熱爐(戴肯-哈伊戴塔路(DENKEN-HIGHDENTAL)公司製造,KDF-75),將真空度設為10 Pa並保持10分鐘。然後,進行升溫並在390℃下進行2小時的加熱處理。在加熱處理後,放冷至室溫(25℃)後,藉由吹掃氮氣而釋放真空,從而獲得加熱處理完畢的導電性粒子。將所獲得的導電性粒子的SEM照片示於圖2中。所獲得的導電性粒子的平均粒徑為2.2 μm,導電層的厚度為110 nm,突起部高度為100.8 nm。將所獲得的導電性粒子的物性值示於表1中。 (5) Vacuum heat treatment The obtained conductive particles were placed in a square container in a manner to have a thickness of 5 mm. They were placed in a vacuum heating furnace (KDF-75, manufactured by DENKEN-HIGHDENTAL), and the vacuum was set to 10 Pa and maintained for 10 minutes. Then, the temperature was raised and heat-treated at 390°C for 2 hours. After the heat treatment, the particles were cooled to room temperature (25°C), and the vacuum was released by blowing nitrogen gas to obtain conductive particles that had been heat-treated. The SEM photograph of the obtained conductive particles is shown in FIG2. The average particle size of the obtained conductive particles was 2.2 μm, the thickness of the conductive layer was 110 nm, and the height of the protrusions was 100.8 nm. The physical properties of the obtained conductive particles are shown in Table 1.

〔實施例2〕 (1)芯材粒子的前處理 使用平均粒徑2.0 μm的樹脂粒子(日產化學股份有限公司製造,歐倍德(Opt Bead))作為芯材粒子,除此以外,進行與實施例1相同的操作,從而獲得前處理完畢的芯材粒子的漿料。 (2)電鍍液的製備 與實施例1的(2)同樣地進行無電解電鍍液的製備。 (3)無電解電鍍處理 進行與實施例1的(3)相同的操作,從而獲得具有突起部的導電性粒子。 (4)突起部處理 進行與實施例1的(4)相同的操作,從而獲得突起部高度為101 nm的導電性粒子。 (5)真空加熱處理 進行與實施例1相同的操作,從而獲得加熱處理完畢的導電性粒子。所獲得的導電性粒子的平均粒徑為2.2 μm,導電層的厚度為94.8 nm,突起部高度為101 nm。將所獲得的導電性粒子的物性值示於表1中。 [Example 2] (1) Pretreatment of core particles A slurry of core particles pretreated with the same procedures as in Example 1 was obtained except that resin particles having an average particle size of 2.0 μm (Opt Bead, manufactured by Nissan Chemical Co., Ltd.) were used as core particles. (2) Preparation of plating solution An electroless plating solution was prepared in the same manner as in (2) of Example 1. (3) Electroless plating treatment The same procedures as in (3) of Example 1 were performed to obtain conductive particles having protrusions. (4) Treatment of protrusions The same procedures as in (4) of Example 1 were performed to obtain conductive particles having protrusions with a height of 101 nm. (5) Vacuum heat treatment The same operation as in Example 1 was performed to obtain conductive particles that had been heat treated. The average particle size of the conductive particles obtained was 2.2 μm, the thickness of the conductive layer was 94.8 nm, and the height of the protrusions was 101 nm. The physical properties of the conductive particles obtained are shown in Table 1.

〔實施例3〕 直至實施例1的(3)無電解電鍍處理為止,進行與實施例1相同的操作,從而獲得具有突起部的導電性粒子。 (4)突起部處理 將所獲得的導電性粒子破碎3小時,除此以外,進行與實施例1相同的操作,從而獲得突起部高度為145.3 nm的導電性粒子。 (5)真空加熱處理 進行與實施例1相同的操作,從而獲得加熱處理完畢的導電性粒子。將所獲得的導電性粒子的SEM照片示於圖3中。所獲得的導電性粒子的平均粒徑為2.2 μm,導電層的厚度為97.8 nm,突起部高度為145.3 nm。將所獲得的導電性粒子的物性值示於表1中。 [Example 3] The same operation as in Example 1 was performed until (3) electroless plating treatment in Example 1, thereby obtaining conductive particles having protrusions. (4) Protrusion treatment The obtained conductive particles were crushed for 3 hours, and the same operation as in Example 1 was performed, thereby obtaining conductive particles having a protrusion height of 145.3 nm. (5) Vacuum heat treatment The same operation as in Example 1 was performed, thereby obtaining conductive particles after heat treatment. A SEM photograph of the obtained conductive particles is shown in FIG. 3 . The average particle size of the obtained conductive particles was 2.2 μm, the thickness of the conductive layer was 97.8 nm, and the protrusion height was 145.3 nm. The physical properties of the obtained conductive particles are shown in Table 1.

〔實施例4〕 直至實施例1的(3)無電解電鍍處理為止,進行與實施例1相同的操作,從而獲得具有突起部的導電性粒子。 (4)突起部處理 對於所獲得的導電性粒子,使用氧化鋯球以80 rpm破碎4小時,除此以外,進行與實施例1相同的操作,從而獲得突起部高度為115.6 nm的導電性粒子。 (5)真空加熱處理 進行與實施例1相同的操作,從而獲得加熱處理完畢的導電性粒子。將所獲得的導電性粒子的SEM照片示於圖4中。所獲得的導電性粒子的平均粒徑為2.2 μm,導電層的厚度為95.8 nm,突起部高度為115.6 nm。將所獲得的導電性粒子的物性值示於表1中。 [Example 4] The same operation as in Example 1 was performed until (3) electroless plating treatment in Example 1, thereby obtaining conductive particles having protrusions. (4) Protrusion treatment The obtained conductive particles were crushed using zirconia balls at 80 rpm for 4 hours, and the same operation as in Example 1 was performed, thereby obtaining conductive particles having a protrusion height of 115.6 nm. (5) Vacuum heat treatment The same operation as in Example 1 was performed, thereby obtaining conductive particles after heat treatment. A SEM photograph of the obtained conductive particles is shown in FIG. 4 . The average particle size of the obtained conductive particles was 2.2 μm, the thickness of the conductive layer was 95.8 nm, and the protrusion height was 115.6 nm. The physical properties of the obtained conductive particles are shown in Table 1.

〔比較例1〕 在實施例1中,不進行(4)平面突起部處理,除此以外,進行與實施例1相同的操作,從而獲得導電性粒子。將所獲得的導電性粒子的物性值示於表1中。 [Comparative Example 1] In Example 1, except that (4) the planar protrusion treatment was not performed, the same operation as in Example 1 was performed to obtain conductive particles. The physical property values of the obtained conductive particles are shown in Table 1.

〔比較例2〕 直至實施例1的(3)無電解電鍍處理為止,進行與實施例1相同的操作,從而獲得具有突起部的導電性粒子。 (4)突起部處理 將所獲得的導電性粒子破碎1小時,除此以外,進行與實施例1相同的操作,從而獲得突起部高度為174.9 nm的導電性粒子。 (5)真空加熱處理 進行與實施例1相同的操作,從而獲得加熱處理完畢的導電性粒子。將所獲得的導電性粒子的SEM照片示於圖5中。所獲得的導電性粒子的平均粒徑為2.2 μm,導電層的厚度為99.9 nm,突起部高度為174.9 nm。將所獲得的導電性粒子的物性值示於表1中。 [Comparative Example 2] The same operation as in Example 1 was performed until (3) electroless plating treatment in Example 1, thereby obtaining conductive particles having protrusions. (4) Protrusion treatment The obtained conductive particles were crushed for 1 hour, and the same operation as in Example 1 was performed, thereby obtaining conductive particles having a protrusion height of 174.9 nm. (5) Vacuum heat treatment The same operation as in Example 1 was performed, thereby obtaining conductive particles after heat treatment. The SEM photograph of the obtained conductive particles is shown in FIG. 5 . The average particle size of the obtained conductive particles was 2.2 μm, the thickness of the conductive layer was 99.9 nm, and the protrusion height was 174.9 nm. The physical properties of the obtained conductive particles are shown in Table 1.

[表1] s _ x 突起部高度偏差 Ra Rb Ra/Rb 面積比 實施例1 10.5 100.8 0.104 0.33 1.0 0.33 0.73 實施例2 10.0 101.0 0.100 0.31 1.0 0.31 0.71 實施例3 25.8 145.3 0.177 0.22 1.0 0.22 0.57 實施例4 13.0 115.6 0.112 0.29 1.0 0.29 0.71 比較例1 63.5 189.7 0.335 0.11 1.0 0.11 0.47 比較例2 50.0 174.9 0.286 0.14 1.0 0.14 0.48 s:突起部標準偏差 _ x:突起部平均高度 Ra:突起部的頭頂部分的曲率半徑 Rb:導電層的下層的表面的曲率半徑 面積比:突起部的頭頂部分的面積總和/導電性粒子的投影面積 [Table 1] s _ x Protrusion height deviation Ra R Ra/Rb Area ratio Embodiment 1 10.5 100.8 0.104 0.33 1.0 0.33 0.73 Embodiment 2 10.0 101.0 0.100 0.31 1.0 0.31 0.71 Embodiment 3 25.8 145.3 0.177 0.22 1.0 0.22 0.57 Embodiment 4 13.0 115.6 0.112 0.29 1.0 0.29 0.71 Comparison Example 1 63.5 189.7 0.335 0.11 1.0 0.11 0.47 Comparison Example 2 50.0 174.9 0.286 0.14 1.0 0.14 0.48 s: Standard deviation of protrusions _ x: Average height of protrusions Ra: Radius of curvature of the top part of the protrusions Rb: Radius of curvature of the surface of the lower layer of the conductive layer Area ratio: Total area of the top part of the protrusions / Projected area of the conductive particles

〔連接電阻性及絕緣性的評價〕 使用實施例及比較例的導電性粒子,利用以下方法進行連接電阻性及絕緣性的評價。 將混合有100質量份的環氧樹脂、150質量份的硬化劑及70質量份的甲苯而成的絕緣性黏接劑與15質量份的實施例或比較例中獲得的導電性粒子加以混合,從而獲得絕緣性膏。使用棒塗機將該膏塗佈於矽酮處理聚酯膜上,然後使膏乾燥,從而在膜上形成薄膜。將所獲得的薄膜形成膜配置並壓接於在整面蒸鍍有鋁電極的玻璃基板、與以50 μm的間距形成有銅電極圖案的聚醯亞胺膜基板之間,從而製作導通電阻測定用的樣品。對所獲得的導通電阻測定用的樣品進行電性連接,在室溫下(25℃、50%RH)對該樣品的連接電阻值進行測定,並進行連接電阻性的評價。再者,連接電阻性是使用萬用表R6552(愛德萬測試(ADVANTEST)股份有限公司製造)並按照以下基準進行評價。將結果示於表2中。〇:電阻值小於2 Ω △:電阻值為2 Ω以上且小於5Ω ×:電阻值為5 Ω以上 [Evaluation of connection resistance and insulation] Using the conductive particles of the examples and comparative examples, the connection resistance and insulation were evaluated by the following method. An insulating adhesive prepared by mixing 100 parts by mass of epoxy resin, 150 parts by mass of hardener, and 70 parts by mass of toluene was mixed with 15 parts by mass of the conductive particles obtained in the examples or comparative examples to obtain an insulating paste. The paste was applied to a silicone-treated polyester film using a bar coater, and then the paste was dried to form a thin film on the film. The obtained thin film-forming film is arranged and pressed between a glass substrate on which an aluminum electrode is vapor-deposited on the entire surface and a polyimide film substrate on which a copper electrode pattern is formed at a pitch of 50 μm, thereby preparing a sample for on-resistance measurement. The obtained sample for on-resistance measurement is electrically connected, and the connection resistance value of the sample is measured at room temperature (25°C, 50%RH), and the connection resistance is evaluated. In addition, the connection resistance is evaluated using a multimeter R6552 (manufactured by ADVANTEST Co., Ltd.) according to the following criteria. The results are shown in Table 2. 0: Resistance value is less than 2 Ω △: Resistance value is 2 Ω or more and less than 5Ω ×: Resistance value is 5 Ω or more

另外,在所述導通電阻測定用的100個樣品中,以發生短路的比例進行絕緣性的評價。絕緣性是利用以下方法進行評價。將結果示於表2中。〇:短路發生率小於5% △:短路發生率為5%以上且小於30% ×:短路發生率為30%以上In addition, among the 100 samples used for the on-resistance measurement, the insulation was evaluated based on the proportion of short circuits. The insulation was evaluated using the following method. The results are shown in Table 2. ○: Short circuit occurrence rate is less than 5% △: Short circuit occurrence rate is 5% or more and less than 30% ×: Short circuit occurrence rate is 30% or more

[表2] 連接電阻值(Ω) 絕緣性 實施例1 實施例2 實施例3 實施例4 比較例1 × 比較例2 [Table 2] Connection resistance (Ω) Insulation Embodiment 1 Embodiment 2 Embodiment 3 Embodiment 4 Comparison Example 1 × Comparison Example 2

根據該結果判明,實施例中獲得的導電性粒子與比較例中獲得的導電性粒子相比,連接電阻值低,絕緣性亦優異。From these results, it is found that the conductive particles obtained in the embodiment have lower connection resistance and better insulation properties than the conductive particles obtained in the comparative example.

1:導電性粒子 2:芯材粒子 3:導電層 4:突起部 5:突起部平面部 5a及5b:平面部的端 6:導電層的下層的表面 1: Conductive particles 2: Core particles 3: Conductive layer 4: Protrusion 5: Planar portion of protrusion 5a and 5b: Ends of planar portion 6: Surface of lower layer of conductive layer

圖1是具有突起部的導電性粒子的概念圖。 圖2是實施例1中獲得的導電性粒子的SEM照片。 圖3是實施例3中獲得的導電性粒子的SEM照片。 圖4是實施例4中獲得的導電性粒子的SEM照片。 圖5是比較例2中獲得的導電性粒子的SEM照片。 FIG1 is a conceptual diagram of a conductive particle having a protrusion. FIG2 is a SEM photograph of the conductive particle obtained in Example 1. FIG3 is a SEM photograph of the conductive particle obtained in Example 3. FIG4 is a SEM photograph of the conductive particle obtained in Example 4. FIG5 is a SEM photograph of the conductive particle obtained in Comparative Example 2.

1:導電性粒子 1: Conductive particles

2:芯材粒子 2: Core material particles

3:導電層 3: Conductive layer

4:突起部 4: Protrusion

5:突起部平面部 5: Flat surface of protrusion

5a及5b:平面部的端 5a and 5b: Ends of the flat surface

6:導電層的下層的表面 6: The surface of the lower layer of the conductive layer

Claims (13)

一種導電性粒子,包括芯材粒子、以及在所述芯材粒子的表面的具有多個突起部的導電層,所述突起部的高度的偏差為0.01以上且0.25以下。A conductive particle includes a core particle and a conductive layer having a plurality of protrusions on a surface of the core particle, wherein a variation in height of the protrusions is 0.01 or more and 0.25 or less. 如請求項1所述的導電性粒子,其中,所述突起部的頭頂部分為大致平面狀。The conductive particle as described in claim 1, wherein the top portion of the protrusion is substantially planar. 如請求項1所述的導電性粒子,其中,在將所述突起部的頭頂部分的曲率半徑設為Ra,將形成有所述突起部的部位的導電層下層的表面的曲率半徑設為Rb時,Ra相對於Rb的比率即Ra/Rb為0.15以上且1.20以下。The conductive particle as described in claim 1, wherein, when the curvature radius of the top portion of the protrusion is set to Ra and the curvature radius of the surface of the lower layer of the conductive layer where the protrusion is formed is set to Rb, the ratio of Ra to Rb, i.e., Ra/Rb, is greater than 0.15 and less than 1.20. 如請求項1所述的導電性粒子,其中,所述突起部的頭頂部分的面積的總和相對於所述導電性粒子的投影面積之比為0.50以上。The conductive particle according to claim 1, wherein a ratio of a total area of the top portion of the protrusion to a projected area of the conductive particle is 0.50 or more. 如請求項1所述的導電性粒子,其中,所述導電層包含選自由鎳、金、鈀所組成的群組中的至少一種。The conductive particle according to claim 1, wherein the conductive layer comprises at least one selected from the group consisting of nickel, gold, and palladium. 如請求項1所述的導電性粒子,其中,平均粒徑為0.1 μm以上且50 μm以下。The conductive particles according to claim 1, wherein the average particle size is 0.1 μm or more and 50 μm or less. 如請求項1所述的導電性粒子,其中,所述導電層的厚度為0.1 nm以上且2,000 nm以下。The conductive particle according to claim 1, wherein the conductive layer has a thickness of 0.1 nm to 2,000 nm. 如請求項1所述的導電性粒子,其中,所述突起部的高度為20 nm以上且1,000 nm以下。The conductive particle according to claim 1, wherein the height of the protrusion is greater than or equal to 20 nm and less than or equal to 1,000 nm. 如請求項1所述的導電性粒子,其中,所述突起部的至少一個的形狀為不定形。The conductive particle according to claim 1, wherein at least one of the protrusions has an amorphous shape. 一種導電性材料,包含如請求項1至9中任一項所述的導電性粒子與絕緣性樹脂。A conductive material comprises the conductive particles according to any one of claims 1 to 9 and an insulating resin. 一種導電性粒子的製造方法,具有如下步驟: 在芯材粒子的表面形成導電層; 在所述導電層形成自表面突出的突起部;以及 使所述突起部的高度平均化。 A method for producing conductive particles comprises the following steps: forming a conductive layer on the surface of a core particle; forming a protrusion protruding from the surface of the conductive layer; and averaging the height of the protrusion. 如請求項11所述的導電性粒子的製造方法,其中,形成所述突起部的步驟中,以無電解鍍鎳浴的自我分解物為核在導電層形成突起部。The method for producing conductive particles according to claim 11, wherein in the step of forming the protrusions, the protrusions are formed on the conductive layer using self-decomposed products of an electroless nickel plating bath as cores. 如請求項11或12所述的導電性粒子的製造方法,其中,使所述突起部的高度平均化的步驟中,對在形成所述突起部的步驟中獲得的突起部的頭頂部分進行研磨而使所述突起部的高度平均化。A method for producing conductive particles as described in claim 11 or 12, wherein in the step of averaging the height of the protrusions, the top portion of the protrusions obtained in the step of forming the protrusions is polished to average the height of the protrusions.
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