TW202410112A - Joining device and joining method - Google Patents

Abstract

A bonding device provided with: a stage (141) holding a substrate (W1); a head (142) configured to face the stage (141) and hold the substrate (W2); and particle beam sources (161, 162) , the particle beam is radiated to a region including a part of the joint surface of the substrates (W1, W2). Next, the particle beam source (161, 162) has a plurality of radiation ports arranged in the direction along the joint surface of the substrate (W1, W2) to which the particle beam is irradiated, and the opening area of each of the plurality of radiation ports is set to: The larger the radiation port is, the farther it is from the center portion in the longitudinal direction of the discharge chamber.

Description

Joining device and joining method

The present invention relates to a joining device and a joining method.

The following method has been proposed: after irradiating a particle beam onto the bonding surfaces of a pair of substrates to perform a surface activation treatment to activate the bonding surfaces of the pair of substrates respectively, the bonding surfaces of the pair of substrates are brought into contact with each other to bond the pair of substrates (for example, refer to Patent Document 1). In this method, in a chamber, stages that hold a pair of substrates are arranged in a mutually separated state, and a particle beam is irradiated from a particle beam source fixed at a fixed position in the chamber onto the bonding surfaces of the substrates held on the stages to activate the bonding surfaces of the substrates. [Prior Art Document] [Patent Document]

[Patent Document 1] Japanese Patent Publication No. 2015-8228

[The problem the invention is trying to solve]

However, in the method described in Patent Document 1, since the irradiation direction of the particle beam is inclined with respect to the joint surface of the substrate, the dose of the particle beam incident on the substrate becomes parallel to the incident surface of the particle beam on the substrate. Uneven. In addition, the particle beam source is linear, and the particle beam source used may have a discharge chamber arranged in an attitude such that the longitudinal direction of the discharge chamber is parallel to the bonding surface of the substrate. However, in the case of such a particle beam source, the plasma density generated in the discharge chamber becomes non-uniform in the longitudinal direction of the discharge chamber. With this, the particle beam in the direction perpendicular to the incident surface of the particle beam on the bonding surface of the substrate The dosage will become uneven. Therefore, if the dose of the particle beam incident on the joint surface of the substrate becomes non-uniform in a direction parallel to the incident surface of the particle beam and in a direction perpendicular to the incident surface, the entire joint surface may not be uniformly activated. The danger.

The present invention was made in view of the above circumstances, and its purpose is to provide: a joining device and a joining method capable of uniformly activating the entire joining surface of the joined objects. [Means for solving the problem]

In order to achieve the above object, regarding the joining device of the present invention, It is a joining device that joins two objects to be joined. It has: The first workpiece holding part holds either one of the two workpieces to be joined; The second workpiece holding portion is disposed to face the first workpiece holding portion and holds the other of the two workpieces to be joined; and The particle beam source radiates the particle beam to a part of the joint surface of the two objects to be joined, The aforementioned particle beam source It has a plurality of radiation ports arranged along the direction of the joint surface of the object to be joined to which the particle beam is irradiated, The opening area of each of the plurality of radiation openings is set to be larger as the radiation opening is arranged farther from the center portion in the arrangement direction of the plurality of radiation openings. [Effects of the invention]

According to the present invention, a particle beam source has a plurality of radiation ports arranged in the direction of the bonding surface of the object to be bonded irradiated by the particle beam. The opening area of each of the plurality of radiation ports is set so that the radiation port arranged farther from the center of the arrangement direction of the plurality of radiation ports is larger. Thus, since the dose of the particle beams respectively emitted from the plurality of radiation ports is uniform, the particle beam can be uniformly irradiated in the arrangement direction of the plurality of radiation ports on the bonding surface of the object to be bonded. In addition, while irradiating the particle beam from the particle beam source to the object to be bonded, by moving the particle beam in a direction horizontal to the bonding surface of the object to be bonded, the particle beam can be uniformly irradiated in the moving direction of the particle beam source on the bonding surface of the object to be bonded. Therefore, the entire bonding surface of the object to be bonded can be uniformly activated.

Hereinafter, the bonding apparatus of the first embodiment of the present invention will be described with reference to the drawings. In the bonding apparatus of the present embodiment, the bonding surfaces of two substrates are activated in a chamber with a reduced pressure atmosphere, and then the substrates are brought into contact with each other and pressurized to bond the two substrates. Here, as a substrate, for example, it is a bonded object composed of any one of a Si substrate, a glass substrate such as a _SiO2 glass substrate, an oxide substrate (for example, a silicon oxide ( _SiO2 ) substrate, an aluminum oxide substrate ( _Al2O3 ) including a _sapphire substrate, gallium oxide ( _Ga2O3 ), etc.), a nitride substrate (for example, silicon nitride (SiN), aluminum nitride ( _AlN ), gallium nitride (GaN)), a GaAs substrate, a silicon carbide (SiC) substrate, a lithium tantalum (Lt: _LiTaO3 ) substrate, a lithium neodymium substrate (Ln: _LiNbO3 ), a diamond substrate, etc. Alternatively, as substrates W1 and W2, it is also possible to have an electrode formed of a metal such as Au, Cu, Al, or Ti provided on the bonding surface. In addition, the substrates W1 and W2 are preferably circular substrates with a diameter of less than 6 inches when viewed from above. In the activation process, the bonding surfaces of the two substrates are irradiated with a particle beam to activate the bonding surfaces of the substrates. In addition, the substrates can be heated before the activation process, or they can be heated when the two substrates are brought into contact with each other and pressurized.

As shown in FIG. 1, the bonding device of this embodiment includes a chamber 120, a stage 141, a head 142, a stage driving unit 143, a head driving unit 144, substrate heating units 1411, 1421, a position deviation measuring unit 150, and particle beam sources 161, 162. In addition, in the following description, the ±Z direction of FIG. 2 is appropriately described as the up-down direction and the XY direction is described as the horizontal direction. The chamber 120 is connected to the vacuum pump 121a through the exhaust pipe 121b and the exhaust valve 121c. When the exhaust valve 121c is set to the open state to activate the vacuum pump 121a, the gas in the chamber 120 is discharged to the outside of the chamber 120 through the exhaust pipe 121b, and the air pressure in the chamber 120 is reduced (depressurized). In addition, the air pressure in the chamber 120 can be set to ^{10 −5} Pa or less. In addition, the air pressure (vacuum degree) in the chamber 120 can be adjusted by changing the opening and closing amount of the exhaust valve 121 c to adjust the exhaust amount.

The stage 141 and the head 142 are arranged to face each other in the Z direction within the chamber 120 . The stage 141 is a first workpiece holding part that holds the substrate W1 on its upper surface, and the head 142 is a second workpiece holding part that holds the substrate W2 on its lower surface. In addition, the upper surface of the stage 141 and the lower surface of the head 142 are considered to be difficult to peel off from the stage 141 and the head 142 because the contact surfaces of the substrates W1 and W2 with the stage 141 and the head 142 are mirror surfaces. Can also be roughened. The stage 141 and the head 142 respectively have holding mechanisms (not shown) for holding the substrates W1 and W2. The holding mechanism includes an electrostatic chuck, a mechanical clamp, etc. Furthermore, the stage 141 has a shape in which a step portion 141a is formed on the peripheral portion. Next, with the substrates W1 and W2 placed on the stage 141, the peripheral portions of the substrates W1 and W2 are arranged above the step portion 141a.

The stage driving unit 143 can move the stage 141 in the XY directions and rotate around the Z axis.

The head drive unit 144 includes: a lifting drive unit 1441 for lifting the head 142 as indicated by arrow AR1; an XY direction drive unit 1442 for moving the head 142 in the XY direction; and a rotation drive unit 1443 for rotating the head 142 in the rotation direction around the Z axis. In addition, the head drive unit 144 includes: a piezo actuator 1444 for adjusting the inclination of the head 142 relative to the stage 141; and a pressure sensor 1445 for measuring the pressure applied to the head 142. The XY-direction drive unit 1442 and the rotation drive unit 1443 move the head 142 relative to the stage 141 in the X direction, the Y direction, and the rotation direction around the Z axis, thereby making it possible to align the substrate W1 held on the stage 141 with the substrate W2 held on the head 142. In addition, the stage drive unit 143 is not limited to the configuration that is arranged directly below the stage 141. For example, the following configuration may be adopted: a backing portion (not shown) that bears pressure is provided directly below the stage 141, and the stage drive unit 143 is arranged on the outer periphery of the stage 141 to drive the stage 141 from the side of the stage 141.

The lifting drive unit 1441 moves the head 142 vertically downward, thereby bringing the head 142 closer to the stage 141 . In addition, the lifting drive unit 1441 moves the head 142 vertically upward, thereby moving the head 142 away from the stage 141 . Next, when the lifting driving part 1441 applies a driving force in a direction approaching the stage 141 to the head part 142 while the substrates W1 and W2 are in contact with each other, the substrate W2 is pressed against the substrate W1. In addition, the lifting drive unit 1441 is provided with a pressure sensor 1441 a that measures the driving force acting on the head 142 in a direction approaching the stage 141 . From the measurement value based on the pressure sensor 1441a, it is possible to detect the pressure acting on the joint portion of the substrates W1 and W2 when the substrate W2 is pressed against the substrate W1 by the lifting drive unit 1441. The pressure sensor 1441a has, for example, a piezoelectric element.

A plurality of groups of piezoelectric actuators 1444 and pressure sensors 1445 are arranged between the head 142 and the XY direction driving unit 1442 . The pressure sensor 1445 is interposed between the upper end of the piezoelectric actuator 1444 and the lower side of the XY direction driving part 1442. The piezoelectric actuator 1444 can respectively expand and contract in the up and down directions. By expanding and contracting, the piezoelectric actuator 1444 can finely adjust the inclination of the head 142 around the X axis and the Y axis and the position of the head 142 in the up and down direction. In addition, the pressure sensor 1445 has, for example, a piezoelectric element, and measures the pressing force at multiple locations on the lower surface of the head 142 . Furthermore, the plurality of piezoelectric actuators 1444 are respectively driven so that the pressing forces measured by the plurality of pressure sensors 1445 are equal, thereby maintaining the lower surface of the head 142 and the upper surface of the stage 141 parallel to each other. The substrates W1 and W2 are brought into contact with each other.

For example, when the aforementioned holding mechanism is an electrostatic chuck, the substrate heating portions 1411 and 1421 have a back portion located on the stage 141 and the head 142 and embedded in the holding mechanism when viewed from the surface side where the substrates W1 and W2 are in contact. The first joint heating part of the electric heater on the side. The substrate heating units 1411 and 1421 heat the substrates W1 and W2 by transferring heat to the substrates W1 and W2 supported by the stage 141 and the head 142 . In addition, by adjusting the calorific value of the substrate heating portions 1411 and 1421, the temperature of the substrates W1 and W2 or their joint surfaces can be adjusted. The positional deviation measurement unit 150 measures the horizontal positional deviation of the substrate W1 relative to the substrate W2 by identifying the positions of the alignment marks (alignment marks) provided on the substrates W1 and W2 respectively. The position offset 150 is to identify the alignment marks of the substrates W1 and W2 using, for example, light (eg, infrared light) passing through the substrates W1 and W2. The stage driving unit 143 moves or rotates the stage 141 in the horizontal direction based on the positional deviation measured by the positional deviation measuring unit 150, thereby performing a position alignment operation (alignment) between the substrates W1 and W2. accurate action).

The particle beam sources 161 and 162 are, for example, fast atom beam (FAB) sources, and are fixed to the stage 141 and the head 142 through beam source supports 122A and 122B, respectively. Here, the irradiation direction AR21 of the particle beam of the particle beam source 161 along the irradiation axis J1 is inclined relative to the perpendicular line n2 of the bonding surface of the substrate W2. In addition, the irradiation direction AR22 of the particle beam of the particle beam source 162 along the irradiation axis J2 is inclined relative to the perpendicular line n1 of the bonding surface of the substrate W1. For example, as shown in FIG. 2, the particle beam sources 161 and 162 each have a discharge chamber 1601, an electrode 1602 arranged in the discharge chamber 1601, a beam source driving unit (not shown), and a gas supply unit 1604 for supplying argon gas into the discharge chamber 1601. The discharge chamber 1601 is formed of a carbon material in a rectangular box shape, and a plurality of radiation ports 1601a, 1601b, and 1601c for radiating particle beams containing neutral atoms are provided on the peripheral wall.

For example, as shown in FIG. 3 , the plurality of radiation ports 1601 a , 1601 b , and 1601 c are arranged in a row along the longitudinal direction of the discharge chamber 1601 . Here, the arrangement directions of each of the radiation ports 1601a, 1601b, and 1601c are arranged in an attitude parallel to the joint surface of the substrates W1 and W2 to which the particle beams radiated from the radiation ports 1601a, 1601b, and 1601c are irradiated. That is, the plurality of radiation ports 1601a, 1601b, and 1601c are arranged in the direction along the joint surface of the substrates W1 and W2 to which the particle beam is irradiated. In addition, the opening area of each of the plurality of radiation ports 1601a, 1601b, and 1601c is set to be located farther away from the central portion of the discharge chamber 1601 in the arrangement direction of the plurality of radiation ports 1601a, 1601b, and 1601c, that is, in the longitudinal direction. The larger the radiation ports 1601a, 1601b, and 1601c are. The opening diameter D2 of the plurality of radiation ports 1601b arranged in the area Po2 adjacent to the central portion of the discharge chamber 1601 in the longitudinal direction is larger than the opening diameter D1 of the plurality of radiation ports 1601a arranged in the area Po1. . In addition, the opening diameter D3 of the plurality of radiation ports 1601c arranged in the region Po3 at both ends of the discharge chamber 1601 in the longitudinal direction is larger than the opening diameter D2 of the plurality of radiation ports 1601c arranged in the region Po2.

The beam source driving unit includes: a plasma generating unit (not shown) that generates argon gas plasma in the discharge chamber 1601; and a DC power supply (not shown) that applies power between the electrode 1602 and the peripheral wall of the discharge chamber 1601. DC voltage. The beam source driving unit applies a DC voltage between the peripheral wall of the discharge chamber 1601 and the electrode 1602 while generating argon gas plasma in the discharge chamber 1601 . At this time, argon ions in the plasma are attracted to the peripheral wall of the discharge chamber 1601. At this time, when the argon ions directed toward the radiation port 1601a pass through the radiation port 1601a, they receive electrons from the peripheral wall of the discharge chamber 1601 formed of a carbon material at the outer peripheral portion of the radiation port 1601a. Then, the above-mentioned argon ions become electrically neutralized argon atoms and are released outside the discharge chamber 1601 . Here, the power supply to the particle beam sources 161 and 162 is set to, for example, 1 kV and 100 mA. Next, the flow rate of the argon gas introduced into the discharge chamber 1601 of each of the particle beam sources 161 and 162 is set to, for example, 50 sccm. In addition, the density of the plasma containing argon generated in the discharge chamber 1601 is smaller at both ends of the discharge chamber 1601 in the longitudinal direction than at the center of the discharge chamber 1601 . In this regard, the plurality of radiation ports 1601a, 1601b, and 1601c of the discharge chamber 1601 are set, as described above, such that the radiation ports 1601b and 1601c are located farther away from the central portion (area Po1) in the longitudinal direction of the discharge chamber 1601. The opening diameters D2 and D3 are larger. Therefore, the dose of the particle beam irradiated from the particle beam source 161 to the regions P11 and P21 of the substrate W1 can be made uniform in the X-axis direction located in the regions P11 and P21. In addition, the density of the particle beam irradiated from the particle beam source 161 to the regions P12 and P22 of the substrate W2 can be made uniform in the X-axis direction located in the regions P12 and P22.

Next, the operation of the bonding device according to this embodiment will be described. As shown in FIG. 4A , the particle beam source 161 irradiates the substrate W2 held on the head 142 with a particle beam, and the particle beam source 162 irradiates the substrate W1 held on the stage 141 with a particle beam. Here, the particle beam source 161 irradiates the region P12 on the −Y direction side of the substrate W2 with the particle beam, and the particle beam source 162 irradiates the region P11 on the +Y direction side of the substrate W1 with the particle beam. In this state, when the head 142 of the bonding device moves in the direction away from the stage 141 as indicated by the arrow AR11, the area irradiated with the particle beam of the substrate W2 goes from the area P12 to the direction indicated by the arrow AR21 in FIG. 5A. +Y direction movement. In addition, the area of the substrate W1 irradiated with the particle beam moves in the −Y direction from the area P11 as indicated by the arrow AR22 in FIG. 5B . Next, as shown in FIG. 4B , the particle beam source 161 irradiates the particle beam to the area P22 on the +Y direction side of the substrate W2 and the particle beam source 162 irradiates the particle beam to the area P21 on the −Y direction side of the substrate W1 . condition. Next, as shown by arrow A12, when the bonding device moves the head 142 in the direction closer to the stage 141, the area irradiated by the particle beam of the substrate W2 will move in the −Y direction from the area P22, and the particle beam of the substrate W1 will move in the −Y direction. The illuminated area will move from area P12 to the +Y direction. Then, it becomes the state shown in FIG. 4A again. Here, the head 142 repeatedly moves up and down between a position separated by a distance H1 from the stage 141 and a position separated by a distance H2 from the stage 141 . Furthermore, the distance H1 and the distance H2 are set to 1:3, for example. Specifically, the distance H1 is set to 50 mm and the distance H2 is set to 150 mm. In addition, it is preferable that the head 142 is raised and lowered so that the end edge of the −Y direction side of the region where the particle beam is irradiated from the substrates W1 and W2 coincides with the end edge of the +Y direction side of the substrates W1 and W2. The edge of the +Y direction side of the region where the particle beam is irradiated on the substrates W1 and W2 coincides with the edge of the −Y direction side of the substrates W1 and W2.

In addition, as shown in FIG. 6 , the bonding device changes the moving speed of the head 142 according to the distance between the stage 141 and the head 142. Specifically, when the distance between the stage 141 and the head 142 is relatively long and the density of the particle beam reaching the substrates W1 and W2 is relatively low, the moving speed of the head 142 is relatively slow. On the other hand, when the distance between the stage 141 and the head 142 is relatively short and the density of the particle beam reaching the substrates W1 and W2 is relatively high, the moving speed of the head 142 is relatively fast. Thus, regardless of the position of the head 142 relative to the stage 141, the amount of particle beam reaching the substrates W1 and W2 per unit time can be made uniform, so that the etching rate caused by the particle beam in the bonding surface of the substrates W1 and W2 can be made uniform.

Here, the evaluation results will be described while comparing the uniformity of the dose of the particle beam at the bonding surface of the substrates W1 and W2 during the activation process with the bonding apparatus of Comparative Example 1 using the bonding apparatus according to this embodiment. . The bonding device of Comparative Example 1, for example, as shown in FIG. 7 , is provided with particle beam sources 9161 and 9162 having a discharge chamber 91601. The discharge chamber 91601 is made of a carbon material and has a rectangular box shape, and has a peripheral wall thereof. A plurality of radiation ports 91601a having the same opening diameter D1 for emitting particle beams are provided. In addition, only the particle beam sources 9161 and 9162 of the bonding devices of Comparative Examples 1 and 2 are different from the bonding device of the embodiment, and the other configurations and operations are the same as those of the bonding device of the embodiment. Therefore, below, the structure of the welding apparatus of Comparative Example 1 is demonstrated using the same symbols as those used for each structure of the welding apparatus of embodiment. However, in the joining device of Comparative Example 1, the head 142 is raised and lowered at a fixed moving speed. In addition, in this evaluation, as the substrates W1 and W2, 4-inch-diameter substrates in which an SiO ₂ film was formed on a Si substrate through thermal oxidation treatment were used. Next, the film thickness distribution of the SiO ₂ film before and after the SiO ₂ film side of the substrate was activated using the particle beam sources 9161 and 9162 of the comparative example was compared with the activation process using the particle beam sources 161 and 162 of the embodiment. Film thickness distribution of the SiO ₂ film before and after the SiO ₂ film side of the substrates W1 and W2. Here, the SiO ₂ film sides of the substrates W1 and W2 are held facing the particle beam sources 9161, 9162, 161, and 162 by the stage 141 and the head 142 of the bonding apparatus of Comparative Example 1 and Embodiment, respectively. Furthermore, in the joining device of Comparative Example 1, the head 142 was repeatedly raised and lowered 10 times at a moving speed of 3.5 mm/sec. In the bonding device according to the embodiment, the head 142 is raised and lowered 10 times while changing the moving speed between 3.5 mm/sec and 1.5 mmsec according to the distance between the stage 141 and the head 142 .

The film thickness distribution of the _SiO2 film on the substrates W1 and W2 is shown in Figure 8, and is performed by measuring the film thickness at 13 regions P1 to P13 on the substrates W1 and W2. In addition, the center positions of the regions P1 to P13 are respectively set to the coordinates shown in the following Table 1, when the P-axis coordinates and Q-axis coordinates of the centers of the substrates W1 and W2 are respectively set to 0 [mm].

[Table 1] Measuring position P axis coordinate [mm] Q axis coordinate [mm] P1 0 0 P2 -15 0 P3 0 -15 P4 0 15 P5 15 0 P6 -40 0 P7 0 40 P8 0 -40 P9 40 0 P10 -15 -15 P11 -15 15 P12 15 -15 P13 15 15

In Comparative Example 1, the SiO ₂ film of the substrate W2 held on the head 142 has a film thickness distribution as shown in FIGS. 9A and 9B before and after the activation process, and the SiO 2 film held on the stage 141 The SiO ₂ film of the substrate W1 has a film thickness distribution as shown in Figure 10A and Figure 10B before and after the activation treatment. Here, the in-plane uniformity of the film thickness after the activation treatment of the SiO ₂ film on the substrate W2 held on the head 142 is 4.0%, and the SiO ₂ film on the substrate W1 held on the stage 141 has an activation treatment The in-plane uniformity of the final film thickness was 4.0%. In addition, "in-plane uniformity" corresponds to the median of the film thickness of the SiO ₂ film in each of the regions P1 to P13 of the substrates W1 and W2 relative to the average value of the film thickness of the SiO ₂ film in each of the regions P1 to P13. ratio.

In addition, in the embodiment, the SiO ₂ film of the substrate W2 held on the head 142 has a film thickness distribution as shown in FIGS. 11A and 11B before and after the activation process, and the SiO 2 film is held on the stage. The SiO ₂ film of the substrate W1 of 141 has a film thickness distribution as shown in Figures 12A and 12B before and after the activation treatment. Here, the in-plane uniformity of the film thickness after the activation treatment of the SiO ₂ film of the substrate W2 held on the head 142 is 1.2%, and the activation treatment of the SiO ₂ film of the substrate W1 held on the stage 141 The in-plane uniformity of the final film thickness was 1.1%. From the results of Comparative Example 1 and the embodiment, while changing the moving speed of the head 142 according to the distance between the stage 141 and the head 142, as with the particle beam sources 161 and 162 of the embodiment, it is understood that: If the plurality of radiation ports 1601a, 1601b, and 1601c of the discharge chamber 1601 are set so that the opening diameter of the radiation ports 1601b and 1601c is larger as the radiation ports 1601b and 1601c are disposed farther away from the center portion in the longitudinal direction of the discharge chamber 1601, the substrate W1, The in-plane uniformity of W2's _SiO2 film is improved. Here, since the in-plane uniformity of the SiO ₂ film of the substrates W1 and W2 depends on the uniformity of the dose of the particle beam irradiated to the substrates W1 and W2, the particle beam sources 161 and 162 of the embodiment are different from those of the comparative example 1. Compared with the particle beam sources 9161 and 9162 of the particle beam sources 9161 and 9162, the uniformity of the dose of the particle beam irradiated into the planes of the substrates W1 and W2 is improved. That is, in the embodiment, it was found that the uniformity of the dose of the particle beam irradiated into the planes of the substrates W1 and W2 was improved compared to Comparative Example 1.

Incidentally, in the previous bonding device shown in FIG. 13A, the positions of the particle beam sources 161 and 162 are fixed, and the particle beam is irradiated from the outer sides of the substrates W1 and W2 to the bonding surface of the substrates W1 and W2. In this configuration, the dose of the side of the substrates W1 and W2 close to the particle beam sources 161 and 162 becomes larger than the dose of the side far from the particle beam sources. Therefore, the etching amount of the side of the substrates W1 and W2 close to the particle beam sources 161 and 162 becomes larger than the etching amount of the side far from the particle beam sources, and a difference in etching amount occurs at both ends of the substrates W1 and W2 in the ±Y direction. In addition, as shown in FIG. 13B , in the case of the conventional particle beam source 9161 having a rectangular box-shaped discharge chamber 91601, the density of plasma generated in the discharge chamber 91601 becomes smaller at both ends in the longitudinal direction of the discharge chamber 91601 than at the central portion in the longitudinal direction of the discharge chamber 91601. Therefore, when the opening areas of the radiation ports 91601a arranged in a row along the longitudinal direction of the discharge chamber 91601 are equal, the dose of the particle beam emitted from the radiation ports 91601a arranged near both ends in the longitudinal direction of the discharge chamber 91601 becomes smaller than the dose of the particle beam emitted from the radiation ports 91601a arranged near the central portion of the discharge chamber 91601. Therefore, the etching amount of the substrates W1 and W2 differs between the center and both ends of the substrates W1 and W2 in the X-axis direction. Therefore, as shown in FIG. 14 , the etching amount of the substrates W1 and W2 varies in the X-direction and the Y-direction.

On the other hand, in the bonding apparatus according to this embodiment, the particle beam source 161 is fixed to the stage 141 and the particle beam is radiated from the outside of the area where the substrate W1 is arranged on the stage 141 to a part of the substrate W2 including the bonding surface. At the same time, the head driving part 144 moves the head 142 in the ±Z direction. Thereby, as the head 142 moves in the ±Z direction, the area irradiated with the particle beam on the joint surface of the substrate W2 moves within the joint surface of the substrate W2. Therefore, by repeating the movement of the head 142 in the ±Z direction, the particle beam can be uniformly irradiated in the Y-axis direction of the substrate W2. In addition, the particle beam sources 161 and 162 of this embodiment have a plurality of radiation ports 1601a, 1601b, and 1601c arranged in a direction along the joint surface of the substrates W1 and W2 to which the particle beam is irradiated. The opening area of each of the discharge chambers 1601c is set to the radiation port (for example, the radiation port 1601c) that is further away from the center of the discharge chamber 1601 in the longitudinal direction of the plurality of radiation ports 1601a, 1601b, and 1601c. The bigger it gets. This makes it possible to uniformly irradiate the particle beams in the X-axis direction of the substrates W1 and W2 because the doses of the particle beams emitted from the plurality of radiation ports 1601a, 1601b, and 1601c respectively become uniform. Therefore, the entire joint surface of the substrates W1 and W2 can be activated uniformly.

Regarding the bonding device of this embodiment, since the range of the particle beam that can be irradiated is limited to a certain extent, it is particularly preferred to use substrates W1 and W2 that are so-called small-diameter substrates that are less than 4 inches.

In addition, regarding the bonding device of this embodiment, while the particle beam source 161 is fixed to the stage 141 and radiates the particle beam from the outside of the area of the stage 141 where the substrate W1 is arranged to the area of the substrate W2 including a part of the bonding surface, the head driving unit 144 moves the head 142 in the ±Z direction. Thereby, as the head 142 moves in the ±Z direction, the area of the bonding surface of the substrate W2 irradiated by the particle beam moves within the bonding surface of the substrate W2. Therefore, by repeating the movement of the head 142 in the ±Z direction, the entire bonding surface of the substrate W2 can be uniformly irradiated with the particle beam, and the entire bonding surface can be uniformly activated. Next, since a transport mechanism for supporting the particle beam source 161 and moving the particle beam source 161 in the horizontal direction relative to the substrate W2 is not required, the entire device can be miniaturized.

As mentioned above, although the embodiment of this invention was described, this invention is not limited to the structure of each said embodiment. For example, as shown in FIG. 15 , the particle beam sources 161 and 162 do not need to be fixed to the stage 141 and the head 142 respectively. In addition, in Fig. 15, the same structures as those in the embodiment are marked with the same reference numerals as in Fig. 2. The bonding device according to this modification is provided with a horizontal drive unit 3163 that jointly supports the particle beam sources 161 and 162 and moves the particle beam sources 161 and 162 in a horizontal direction perpendicular to the facing direction of the substrates W1 and W2. In the bonding apparatus according to this modified example, as shown in FIG. 16 , the particle beam sources 161 and 162 respectively move as shown by arrows AR32 while irradiating the bonding surfaces of the substrates W1 and W2 with particle beams. In addition, the bonding apparatus according to this modified example may be provided with particle beam sources 2161 and 2162 having a discharge chamber 21601 shown in FIG. 17 described later, instead of the particle beam sources 161 and 162.

In the bonding device described in the above-mentioned embodiment, when the particle beam is irradiated to the substrates W1 and W2, the distance between the particle beam 161 and 162 and the substrates W1 and W2 changes, the dose of the particle beam irradiated to the substrates W1 and W2 changes, and the etching rate of the surface of the substrates W1 and W2 changes accordingly. In contrast, according to the present configuration, since the particle beam can be irradiated to the substrates W1 and W2 while the distance between the particle beam source 161 and 162 and the substrates W1 and W2 is maintained fixed, the moving speed of the particle beam 161 and 162 can be set to be fixed and the dose of the particle beam irradiated to the substrates W1 and W2 can be made uniform.

In the embodiment, for example, the discharge chamber 21601 may have a plurality of types of radiation ports 21601a, 21601b, and 21601c with different radiation directions, such as the particle beam sources 2161 and 2162 shown in FIG. 17. Here, the arrangement directions of each of the radiation ports 21601a, 21601b, and 21601c are arranged in an attitude parallel to the joint surface of the substrates W1 and W2 to which the particle beams radiated from the radiation ports 21601a, 21601b, and 21601c are irradiated. That is, the plurality of radiation ports 21601a, 21601b, and 21601c are arranged in the direction along the joint surface of the substrates W1 and W2 to which the particle beam is irradiated. In addition, the opening areas of each of the plurality of radiation ports 21601a, 21601b, and 21601c are set to be located farther away from the central portion in the arrangement direction of the plurality of radiation ports 21601a, 21601b, and 21601c, that is, in the longitudinal direction of the discharge chamber 21601. The radiation ports 21601a, 21601b, and 21601c have a larger inclination angle from the direction perpendicular to the longitudinal direction of the discharge chamber 21601 to one end side in the longitudinal direction. Specifically, the radiation axes J21 of the particle beams of the plurality of radiation ports 21601a arranged in the region Po21 of the longitudinal center portion of the discharge chamber 21601 are substantially parallel to the direction perpendicular to the longitudinal direction of the discharge chamber 21601. In addition, the radiation axis J22 of the plurality of radiation ports 21601b arranged in the area Po22 adjacent to the area Po21 in the longitudinal direction of the discharge chamber 21601 is oriented with respect to the direction perpendicular to the longitudinal direction of the discharge chamber 21601, that is, with respect to the radiation axis J21. The angle θ21 is tilted. Furthermore, the radiation axes J23 of the plurality of radiation ports 21601c arranged in the regions Po23 at both ends of the discharge chamber 21601 in the longitudinal direction are relative to the direction perpendicular to the longitudinal direction of the discharge chamber 21601, that is, relative to the radiation axis J21 Inclined at angle θ22, which is greater than angle θ21.

In the particle beam sources 2161 and 2162 according to this modification, a pass is disposed in the discharge chamber 21601 from a central portion in the longitudinal direction of the discharge chamber 21601 where the density of plasma generated in the discharge chamber 21601 is relatively high. The radiation ports 21601c at both ends in the length direction emit particle beams. Therefore, the difference in dose of the particle beams radiated from the radiation ports 21601a, 21601b, and 21601c can be reduced. Thereby, the doses of the particle beams reaching the substrates W2 and W1 from the particle beam sources 2161 and 2162 respectively can be made uniform in the X-axis direction in the areas P12, P22, P11 and P21 of the substrates W2 and W1 irradiated with the particle beams. Therefore, the etching rates of the substrates W1 and W2 can be made uniform in the Y-axis direction of the regions P11 and P21 of the substrate W1 and the regions P12 and P22 of the substrate W2.

In the embodiment, a radiation direction changing unit (not shown) for changing the radiation direction of the particle beam of at least one of the particle beam sources 161 and 162 may be provided according to the distance between the stage 141 and the head 142 .

In the embodiment, an example has been described in which the two particle beam sources 161 and 162 are respectively fixed on the stage 141 and the head 142. However, the invention is not limited to this. For example, the bonding device may also include two particle beam sources 161 and 162 fixed on the stage 141 and the head 142, respectively. One particle beam source of the stage 141 may be provided with one particle beam source fixed on the head 142 .

In the embodiment, although an example of raising and lowering the head 142 is described, the present invention is not limited to this. For example, the stage 141 may be raised and lowered while restricting the movement of the head 142 in the vertical direction, or both the stage 141 and the head 142 may be raised and lowered.

In the embodiment, in the activation treatment step, although an example of irradiating the bonding surface of the substrates W1 and W2 with a particle beam is described, it is not limited to this. For example, an ion gun can also be used to irradiate the bonding surface of the substrates W1 and W2 with an ion beam. In addition, in each embodiment, the particle beam source 161 and 162 can also irradiate Si particles together with argon to the bonding surface of the substrates W1 and W2.

In each embodiment, although the examples in which the objects to be bonded are substrates W1 and W2 are described, the present invention is not limited thereto. For example, the objects to be bonded may be a chip or a substrate.

The present invention does not depart from the broad spirit and scope of the present invention, and various embodiments and modifications are considered possible. In addition, the above-mentioned embodiment is used to illustrate this invention, and is not intended to limit the scope of this invention. That is, the scope of the present invention is shown not by the embodiments but by the scope of the patent claims. In addition, various modifications implemented within the scope of the patent claims and the scope of the equivalent invention are deemed to be within the scope of this invention.

This application is based on Japanese Patent Application No. 2022-100457 filed on June 22, 2022. The entire specification, claims, and drawings of Japanese Patent Application No. 2022-100457 are incorporated herein by reference. [Industrial utilization possibility]

The present invention is suitable for the manufacturing of, for example, CMOS (Complementary MOS) image sensors, memories, computing components, and MEMS (Micro Electro Mechanical Systems).

120:Cavity 121a: Vacuum pump 121b:Exhaust pipe 121c:Exhaust valve 122A, 122B: Beam source support part 141: Carrier platform 142:Head 143: Stage drive department 144:Head drive part 150: Position offset measurement part 161,162,2161,2162,9161,9162: Particle beam source 1411,1421:Substrate heating part 1441:Lifting drive part 1441a,1445: Pressure sensor 1442:XY direction drive part 1443: Rotary drive unit 1444: Piezoelectric actuator 1601,21601,91601:Discharge chamber 1601a, 1601b, 1601c, 21601a, 21601b, 21601c, 91601a: radiation port 1602:Electrode 1604:Gas supply source 3163: Horizontal drive part AR1, AR11, AR12, AR21, AR22, AR31, AR32: Arrow D1, D2, D3: diameter H1, H2: distance J1, J2: irradiation axis J21, J22, J23: Radial axis P,Q: axis P1,P2,P3,P4,P5,P6,P7,P8,P9,P10,P11,P12,P13,Po1,Po2,Po3,Po21,Po22,Po23: area n1,n2: vertical line W1, W2: substrate X,Y,Z: direction θ21, θ22: angle

Figure 1 is a schematic front view of a bonding device according to an embodiment of the present invention. Fig. 2 is a diagram showing a part of the bonding device according to the embodiment. Figure 3 is a schematic front view of the discharge chamber according to the embodiment. FIG. 4A is a diagram showing a part of the bonding device according to the embodiment and showing a state in which the distance between the stage and the head is the shortest. Fig. 4B is a diagram showing a part of the bonding device according to the embodiment and showing a state in which the distance between the stage and the head is the longest. FIG. 5A is a diagram showing the irradiation area of the particle beam on the stage of the embodiment. Fig. 5B is a diagram showing the irradiation area of the particle beam on the head of the embodiment. Fig. 6 is an operation explanatory diagram of the bonding device according to the embodiment. Fig. 7 is a schematic front view of the discharge chamber of Comparative Example 1. Figure 8 shows the film thickness measurement points of the substrate used for the evaluation of the uniformity of the dose of the particle beam for the activation process. Fig. 9A is a diagram showing the film thickness distribution of the SiO ₂ film before and after the activation treatment in Comparative Example 1 and showing the film thickness distribution in the P-axis direction of Fig. 8. Figure 9B is a figure showing the film thickness distribution of the SiO ₂ film before and after the activation treatment in Comparative Example 1, and shows the film thickness distribution in the Q-axis direction of Figure 8. Figure 10A is a figure showing the film thickness distribution of the SiO ₂ film before and after the activation treatment in Comparative Example 1, and shows the film thickness distribution in the P-axis direction of Figure 8. Figure 10B is a figure showing the film thickness distribution of the SiO ₂ film before and after the activation treatment in Comparative Example 1, and shows the film thickness distribution in the Q-axis direction of Figure 8. Fig. 11A is a diagram showing the film thickness distribution of the SiO ₂ film before and after the activation treatment of the embodiment, and shows the film thickness distribution in the P-axis direction of Fig. 8. Figure 11B is a figure showing the film thickness distribution of the SiO ₂ film before and after the activation treatment of the embodiment, and shows the film thickness distribution in the Q-axis direction of Figure 8. Fig. 12A is a diagram showing the film thickness distribution of the SiO ₂ film before and after the activation treatment of the embodiment, and shows the film thickness distribution in the P-axis direction of Fig. 8. Fig. 12B is a diagram showing the film thickness distribution of the SiO ₂ film before and after the activation treatment of the embodiment, and shows the film thickness distribution in the Q-axis direction of Fig. 8. Fig. 13A is a diagram showing a part of the bonding device of Comparative Example 2. Figure 13B is a diagram showing the dose distribution when the substrate is irradiated with a particle beam using the bonding apparatus according to Comparative Example 2. Figure 14 is a schematic diagram of plasma distribution in the particle beam source of Comparative Examples 1 and 2 and the embodiment. Fig. 15 is a diagram showing a part of a joining device according to a modified example. Fig. 16 is an operation explanatory diagram of the joining device according to the modified example. Fig. 17 is a schematic front view of a discharge chamber according to a modified example.

120:Cavity

121a: Vacuum pump

121b: Exhaust pipe

121c: Exhaust valve

122A, 122B: beam source support

141: Carrier

142: Head

143: Stage drive department

144: Head drive unit

150: Position offset measurement part

161,162: Particle beam source

1411,1421:Substrate heating part

1441: Lifting drive unit

1441a,1445:Pressure sensor

1442:XY direction drive part

1443: Rotary drive unit

1444: Piezoelectric actuator

AR1: Arrow

W1,W2: Substrate

Claims (16)

A bonding device is a bonding device for bonding two objects to be bonded, comprising: a first object holding portion for holding any one of the two objects to be bonded; a second object holding portion for holding the other of the two objects to be bonded, which is arranged to face the first object holding portion and to hold the other of the two objects to be bonded; and a particle beam source for irradiating a particle beam to an area including a portion of a bonding surface of any one of the two objects to be bonded, the particle beam source having a plurality of radiation ports arranged in a direction along the bonding surface of the objects to be bonded irradiated with the particle beam, the opening area of each of the plurality of radiation ports is set such that the radiation port arranged at a position farther from the center of the arrangement direction of the plurality of radiation ports is larger. A joining device is a joining device that joins two objects to be joined, and has: The first workpiece holding part holds either one of the two workpieces to be joined; The second workpiece holding portion is disposed to face the first workpiece holding portion and holds the other of the two workpieces to be joined; and A particle beam source radiates a particle beam to an area including a part of any joint surface of the two objects to be joined, The aforementioned particle beam source It has a plurality of radiation ports arranged along the direction of the joint surface of the object to be joined to which the particle beam is irradiated, The radiation directions of the particle beams of each of the plurality of radiation ports are set so that the radiation ports arranged farther away from the center of the arrangement direction of the plurality of radiation ports are from a direction perpendicular to the arrangement direction to the direction of the arrangement. The angle of inclination at one end of the direction is larger. The bonding device as recited in claim 1 or 2 is further provided with a horizontal drive unit for moving the particle beam source in a horizontal direction perpendicular to the facing direction of the two objects to be bonded. A bonding device is a bonding device for bonding two objects to be bonded, comprising: a first object holding portion for holding any one of the two objects to be bonded; a second object holding portion for holding the other of the two objects to be bonded, which is arranged to face the first object holding portion and to hold the other of the two objects to be bonded; a first particle beam source, which is fixed to the first object holding portion and radiates a particle beam from the outer side of the area of the first object holding portion where the one object to be bonded is arranged to the area including a part of the bonding surface of the other object to be bonded; and a driving portion, which moves at least one of the first object holding portion and the second object holding portion in a first direction in which the first object holding portion and the second object holding portion are close to each other or in a second direction in which the first object holding portion and the second object holding portion are separated. The bonding device as described in claim 4 is further provided with: a second particle beam source, which is fixed to the aforementioned second object holding portion, and radiates a particle beam from the outer side of the aforementioned second object holding portion where the aforementioned other area is arranged toward an area of the aforementioned first object holding portion that includes a portion of the bonding surface of the aforementioned one object to be bonded. The joint device as described in claim 5, wherein The irradiation direction of the particle beam from the first particle beam source is inclined relative to the perpendicular to the joining surface of the other object to be joined, The irradiation direction of the particle beam of the second particle beam source is inclined relative to the perpendicular to the joining surface of the one to be joined. A bonding device as described in claim 5 or 6, wherein at least one of the aforementioned first particle beam source and the aforementioned second particle beam source has a plurality of emission ports arranged in a row for emitting particle beams, and the arrangement direction of the aforementioned plurality of emission ports is arranged to be parallel to the posture of the bonding surface of the two objects to be bonded irradiated by the particle beams emitted from the aforementioned emission ports. A bonding device as described in claim 5 or 6, wherein at least one of the first particle beam source and the second particle beam source has a plurality of radiation ports arranged in a direction along the bonding surface of the bonded object irradiated by the particle beam, and the opening area of each of the plurality of radiation ports is set such that the radiation port arranged farther from the center of the arrangement direction of the plurality of radiation ports has a larger opening area. A bonding device as described in claim 5 or 6, wherein at least one of the first particle beam source and the second particle beam source has a plurality of radiation ports arranged in the direction of the bonding surface of the bonded object irradiated by the particle beam, and the radiation direction of the particle beam of each of the plurality of radiation ports is set such that the radiation port arranged farther from the center of the arrangement direction of the plurality of radiation ports has a greater inclination angle from the direction perpendicular to the arrangement direction to the side of one end of the arrangement direction. The joining device according to any one of claims 4 to 6, wherein the driving part moves at least one of the first joined object holding part and the second joined object holding part so that the first joined object is held The longer the distance between the portion and the second bonded object holding portion, the slower the moving speed becomes. The bonding device according to any one of claims 1, 2, and 4, wherein at least one of the two objects to be bonded is a circular substrate with a diameter of 6 inches or less in plan view. A joining method is a joining method for joining two objects to be joined, comprising: a joining portion holding step, wherein any one of the two objects to be joined is held in a first joining portion, and the other of the two objects to be joined is held in a second joining portion arranged to face the first joining portion; and an activation step, wherein a particle beam is radiated from the particle beam source to a region including a portion of a joining surface of any one of the two objects to be joined, thereby activating the joining surface, the particle beam source having a plurality of radiation ports arranged in a direction along the joining surface of the object to be joined irradiated with the particle beam, the opening area of each of the plurality of radiation ports is set such that the radiation port arranged at a position farther from the center of the arrangement direction of the plurality of radiation ports is larger. A joining method that joins two objects to be joined, including: The step of holding the bonded part is to hold one of the two bonded objects in the first bonded object holding part, and at the same time, hold the other of the two bonded objects in a position arranged as a second workpiece holding portion facing the first workpiece holding portion; and an activation step of radiating a particle beam from the particle beam source to a region including a part of any bonding surface of the two objects to be bonded, thereby activating the bonding surface, The aforementioned particle beam source It has a plurality of radiation ports arranged along the direction of the joint surface of the object to be joined to which the particle beam is irradiated, The radiation directions of the particle beams of each of the plurality of radiation ports are set so that the radiation ports arranged farther away from the center of the arrangement direction of the plurality of radiation ports are from a direction perpendicular to the arrangement direction to the direction of the arrangement. The angle of inclination at one end of the direction is larger. A bonding method, comprising: an activation step, wherein a first particle beam source fixed to the first bonded object holding part radiates a particle beam from the outer side of the area of the first bonded object holding part where the first bonded object is arranged toward a part of the bonding surface of the second bonded object holding part including the other bonded object, while keeping any bonded part of the two bonded objects on a first bonded object holding part and keeping the other bonded object on a second bonded object holding part arranged to face the first bonded object holding part, and at the same time, at least one of the first bonded object holding part and the second bonded object holding part moves in a first direction where the first bonded object holding part and the second bonded object holding part are close to each other or in a second direction where the first bonded object holding part and the second bonded object holding part are separated, thereby activating the bonding surfaces of the two bonded objects; and The joining step is to make the joining surfaces of the two objects to be joined, whose joining surfaces have been activated, contact each other, thereby joining the two objects to be joined. A joining method as described in claim 14, wherein in the aforementioned joining step, while a second particle beam source fixed to the aforementioned second object holding portion radiates a particle beam from the outer side of an area of the aforementioned second object holding portion where the aforementioned other object is arranged to an area including a portion of the joining surface of the aforementioned one object, at the same time, at least one of the aforementioned first object holding portion and the aforementioned second object holding portion is moved in a first direction in which the aforementioned first object holding portion and the aforementioned second object holding portion are brought closer to each other or in a second direction in which the aforementioned first object holding portion and the aforementioned second object holding portion are moved away from each other. A bonding method as described in claim 14 or 15, wherein at least one of the two objects to be bonded is a circular substrate having a diameter of less than 6 inches when viewed from top.