TW202407385A - Imaging systems and corresponding operation methods - Google Patents

Abstract

Disclosed herein is a method, comprising: sending a radiation beam toward an object; rotating the object about a rotation axis perpendicular to an imaging plane of an image sensor, wherein the imaging plane intersects all sensing elements of the image sensor; translating back and forth the image sensor with respect to the rotation axis along a translation line perpendicular to the rotation axis; and for i=1, …, M, and j=1, …, Ni, capturing with the image sensor an image (i, j) of the object based on an interaction between the radiation beam and the object, wherein M and Ni, i=1, …, M are integers greater than 1, wherein each of the images (i, j), i=1, …, M, and j=1, …, Ni is captured while said translating is being performed and while said rotating is being performed.

Description

Imaging systems and corresponding operating methods

The present invention relates to an imaging system and a corresponding operating method.

A radiation detector is a device that measures the characteristics of radiation. Examples of such properties may include the intensity, phase, and spatial distribution of polarization of the radiation. The radiation measured by the radiation detector may be radiation that has passed through the object. The radiation measured by the radiation detector may be electromagnetic radiation, such as infrared light, visible light, ultraviolet light, X-rays or gamma rays. Radiation can be of other types such as alpha rays and beta rays. An imaging system may include one or more image sensors, each of which may have one or more radiation detectors.

Disclosed herein is a method comprising: sending a radiation beam to an object; rotating the object about an axis of rotation perpendicular to an imaging plane of an image sensor, wherein the imaging plane is aligned with an imaging plane of the image sensor; All sensing elements intersect; the image sensor is translated back and forth relative to the rotation axis along a translation line perpendicular to the rotation axis; and for i=1,...,M and j= 1,..., Ni, based on the interaction between the radiation beam and the object, the image sensor is used to capture the image (i, j) of the object, where M and Ni, i=1,...,M, is an integer greater than 1, where for each image (i, j), i=1,...,M and j=1 ,..., Ni, are all captured while performing the translation and while performing the rotation.

In one aspect, the image sensor includes a plurality of active areas and first gaps between the plurality of active areas, and each of the first gaps is along a line that is not parallel to the The first direction of the translation line.

In one aspect, the translational amplitude of the translation is greater than any width of any of the first gaps measured in a direction parallel to the translation line.

In one aspect, the image sensor further includes a second gap between the plurality of active regions, and each of the second gaps is along a second gap perpendicular to the first direction. direction.

In one aspect, the axis of rotation intersects an active region of the plurality of active regions or a gap of the first gaps and does not intersect any of the second gaps.

In one aspect, the method further includes splicing the images (i, j), i=1,...,M and j=1,...,Ni, thereby obtaining the Stitched images of objects.

In one aspect, the stitching is performed by the image sensor.

In one aspect, the radiation beam includes X-rays.

In one aspect, for each value of i, when the image (i,j),j=1,...,Ni is captured, each point of the object is relative to the image The radiation beams on the imaging plane of the sensor respectively have shadows (i, j), j=1,...,Ni, and each point on the imaging plane has The distance between any two shadows in the shadows (i, j), j=1,...,Ni does not exceed any width of any sensing element of the image sensor.

In one aspect, the images (i,j), i=1,...,M, j=1,...,Ni are captured one image at a time, and the The above image (i,j), i=1,...,M, and j=1,...,Ni are captured one i value at a time.

In one aspect, the axis of rotation intersects the object.

Disclosed herein is a system comprising: a radiation source and an image sensor; wherein the radiation source is configured to emit a radiation beam to an object; and wherein the system is configured to surround the sensor perpendicular to the image sensor. the object is rotated about an axis of rotation of the imaging plane of the device; wherein the imaging plane intersects all sensing elements of the image sensor; wherein the image sensor is configured to rotate along a direction perpendicular to the rotation The translation line of the axis translates back and forth relative to the rotation axis; where for i=1,...,M and j=1,...,Ni, the image sensor is configured To capture an image (i,j) of the object based on the interaction between the radiation beam and the object, where M and Ni, i=1,...,M, are greater than 1 integer, and each of the images (i, j), i=1,...,M and j=1,...,Ni, is translating the image The image sensor is captured simultaneously and while rotating the image sensor.

In one aspect, the image sensor includes a plurality of active areas and first gaps between the plurality of active areas, and each of the first gaps is along a line that is not parallel to the The first direction of the translation line.

In one aspect, the translation amplitude of the translation of the image sensor is greater than any width of any of the first gaps measured in a direction parallel to the translation line.

In one aspect, the image sensor further includes second gaps between the plurality of active regions, and each of the second gaps is along a second direction perpendicular to the first direction.

In one aspect, the axis of rotation intersects an active region of the plurality of active regions or a gap of the first gaps and does not intersect any of the second gaps.

In one aspect, the system is further configured to stitch the images (i, j), i=1,...,M and j=1,...,Ni, to obtain A stitched image of the object.

In one aspect, the image sensor is configured to stitch the images (i, j), i=1,...,M and j=1,...,Ni .

In one aspect, the radiation beam includes X-rays.

In one aspect, for each i value, each point of the object is relative to the image sense when the image (i,j), j=1,...,Ni is captured. The radiation beams on the imaging plane of the detector respectively have shadows (i, j), j=1,...,Ni, and the shadow of each point on the imaging plane The distance between any two shadows in (i, j), j=1,...,Ni does not exceed any width of any sensing element of the image sensor.

In one aspect, the images (i,j), i=1,...,M, j=1,...,Ni are captured one image at a time, and the The above image (i,j), i=1,...,M, and j=1,...,Ni are captured one i value at a time.

In one aspect, the axis of rotation intersects the object.

radiation detector

Figure 1 schematically shows a radiation detector 100 as an example. Radiation detector 100 may include an array of pixels 150 (also referred to as sensing elements 150). The array may be a rectangular array (as shown in Figure 1), a honeycomb array, a hexagonal array, or any other suitable array. The pixel 150 array in the example of Figure 1 has 4 columns and 7 rows; however, in general, the pixel 150 array can have any number of rows and any number of columns.

Each pixel 150 may be configured to detect radiation incident thereon from a radiation source (not shown) and may be configured to measure characteristics of the radiation (eg, energy, wavelength, and frequency of the particles). Radiation may include radiation particles such as photons (X-rays, gamma rays, etc.) and subatomic particles (alpha particles, beta particles, etc.). Each pixel 150 may be configured to count, over a period of time, the number of radiation particles incident thereon whose energy falls within a plurality of energy bins. All pixels 150 may be configured to count the number of radiation particles incident thereon in multiple energy intervals over the same period of time. When the incident radiation particles are of similar energy, the pixel 150 may be configured simply to count the number of radiation particles incident thereon over a period of time without measuring the energy of the individual radiation particles.

Each pixel 150 may have its own analog-to-digital converter (ADC) configured to digitize an analog signal representing the energy of an incident radiation particle into a digital signal, or to digitize an analog signal representing the total energy of multiple incident radiation particles. The signal is digitized into a digital signal. Pixels 150 may be configured for parallel operation. For example, while one pixel 150 is measuring incoming radiation particles, another pixel 150 may be waiting for the radiation particles to arrive. Pixels 150 may not necessarily be individually addressable.

The radiation detector 100 described herein may have a device such as an X-ray telescope, X-ray mammography, industrial X-ray defect detection, X-ray microscopy or microradiography, X-ray casting inspection, Applications such as welding inspection, X-ray digital subtraction angiography, etc. It may be suitable to use the radiation detector 100 in place of a photographic plate, photographic film, PSP plate, X-ray image intensifier, scintillator or other semiconductor X-ray detector.

Figure 2 schematically illustrates a simplified cross-sectional view of the radiation detector 100 of Figure 1 along line 2-2, according to an embodiment. Specifically, the radiation detector 100 may include a radiation absorbing layer 110 and an electronics layer 120 (which may include one or more ASICs or application specific integrated circuits) for processing and analyzing electrical signals generated by incident radiation in the radiation absorbing layer 110 ). Radiation detector 100 may or may not include scintillator (not shown). Radiation absorbing layer 110 may include semiconductor materials such as silicon, germanium, GaAs, CdTe, CdZnTe, or combinations thereof. Semiconducting materials can have high-quality attenuation coefficients for the radiation of interest.

As an example, Figure 3 schematically shows a detailed cross-sectional view of the radiation detector 100 of Figure 1 along line 2-2. Specifically, the radiation absorbing layer 110 may include one or more diodes (eg, p-i-n or p-n) formed by one or more discrete regions 114 of the first doped region 111 , the second doped region 113 . The second doped region 113 may be separated from the first doped region 111 by an optional intrinsic region 112 . Discrete regions 114 may be separated from each other by first doped regions 111 or intrinsic regions 112 . The first doped region 111 and the second doped region 113 may have opposite types of doping (eg, region 111 is p-type and region 113 is n-type, or region 111 is n-type and region 113 is p-type). In the example of FIG. 3 , each discrete region 114 of the second doped region 113 forms a diode with a first doped region 111 and an optional intrinsic region 112 . That is, in the example of FIG. 3 , the radiation absorbing layer 110 has a plurality of diodes (more specifically, 7 diodes corresponding to 7 pixels 150 in one column of the array of FIG. 1 , for simplicity, FIG. Only 2 of these pixels are labeled in 3150). Multiple diodes may have electrical contact 119A as a common (common) electrode. The first doped region 111 may also have discrete portions.

Electronics layer 120 may include electronic systems 121 suitable for processing or interpreting signals generated by radiation incident on radiation absorbing layer 110 . Electronic system 121 may include analog circuits such as filter networks, amplifiers, integrators, and comparators, or digital circuits such as microprocessors and memories. Electronic system 121 may include one or more ADCs (analog-to-digital converters). Electronic system 121 may include components that are common to each pixel 150 or components that are specific to a single pixel 150 . For example, electronic system 121 may include an amplifier dedicated to each pixel 150 and a microprocessor shared among all pixels 150 . Electronic system 121 may be electrically connected to pixel 150 through via 131 . The spaces between the vias may be filled with filling material 130 , which may increase the mechanical stability of the connection of the electronic device layer 120 to the radiation absorbing layer 110 . Other bonding techniques may connect electronic system 121 to pixel 150 without using via 131 .

When radiation from a radiation source (not shown) strikes the radiation absorbing layer 110 including a diode, the radiation particles may be absorbed and generate one or more charge carriers (eg, electrons, holes) through a variety of mechanisms. Charge carriers can drift to one of the electrodes of the diode under an electric field. The electric field may be an external electric field. Electrical contact 119B may include discrete portions, each discrete portion being in electrical contact with discrete region 114 . The term "electrical contact" may be used interchangeably with the word "electrode". In one embodiment, the charge carriers may drift in all directions such that the charge carriers generated by a single radiating particle are not substantially shared by two different discrete regions 114 (herein "substantially not. . . . ..shared" means that less than 2%, less than 0.5%, less than 0.1% or less than 0.01% of these charge carriers flow to a different location than the remaining charge carriers. discrete area 114). Charge carriers generated by radiation particles incident around the footprint of one of the discrete regions 114 are substantially not shared with another of the discrete regions 114 . Pixels 150 associated with discrete regions 114 may be regions surrounding discrete regions 114 in which substantially all (more than 98%, more than 99.5%, more than 99.9%, or more than 99.99%) of the charge carriers flow to the discrete region 114. That is, less than 2%, less than 1%, less than 0.1%, or less than 0.01% of these charge carriers flow through the pixel 150 .

Figure 4 schematically shows a detailed cross-sectional view along line 2-2 of the radiation detector 100 of Figure 1 according to an alternative embodiment. More specifically, radiation absorbing layer 110 may include resistors of semiconductor materials such as silicon, germanium, GaAs, CdTe, CdZnTe, or combinations thereof, but not diodes. Semiconducting materials can have high-quality attenuation coefficients for the radiation of interest. In one embodiment, the electronic device layer 120 of FIG. 4 is similar in structure and function to the electronic device layer 120 of FIG. 3 .

When radiation strikes the radiation absorbing layer 110, which includes a resistor but not a diode, it can be absorbed and generate one or more charge carriers through a variety of mechanisms. Radiating particles can produce anywhere from 10 to 100,000 charge carriers. Charge carriers can drift to electrical contacts 119A and 119B under the electric field. The electric field may be an external electric field. Electrical contacts 119B may include discrete portions. In one embodiment, the charge carriers may drift in all directions such that the charge carriers generated by a single radiated particle are not substantially shared by two different discrete portions of electrical contact 119B (herein "substantially not" ...shared" means less than 2%, less than 0.5%, less than 0.1% or less than 0.01% of the charge carriers compared to the remaining charge carriers subflow to a different discrete part). Charge carriers generated by radiation particles incident around the footprint of one of the discrete portions of electrical contact 119B are substantially not shared with another of the discrete portions of electrical contact 119B. A pixel 150 associated with a discrete portion of electrical contact 119B may be an area surrounding the discrete portion in which substantially all (more than 98%, more than 99.5%, more than 99.9%) of the radiation produced by radiation particles incident therein or more than 99.99%) of the charge carriers flow to discrete portions of electrical contact 119B. That is, less than 2%, less than 0.5%, less than 0.1%, or less than 0.01% of these charge carriers flow through a pixel associated with a discrete portion of electrical contact 119B.

Radiation detector packaging

FIG. 5 schematically shows a top view of a radiation detector package 500 including the radiation detector 100 and a printed circuit board (PCB) 510 . The term "PCB" as used herein is not limited to a specific material. For example, a PCB may include semiconductors. Radiation detector 100 may be mounted to PCB 510. For clarity, the wiring between radiation detector 100 and PCB 510 is not shown. Package 500 may have one or more radiation detectors 100 . PCB 510 may include input/output (I/O) area 512 not covered by radiation detector 100 (eg, to accommodate bond wires 514). Radiation detector 100 may have an active area 190, which is where pixel 150 (FIG. 1) is located. Radiation detector 100 may have a perimeter region 195 near an edge of radiation detector 100 . Peripheral region 195 has no pixels 150, and radiation detector 100 does not detect radiation particles incident on peripheral region 195.

image sensor

Figure 6 schematically shows a cross-sectional view of an image sensor 600 according to an embodiment. Image sensor 600 may include one or more radiation detector packages 500 of FIG. 5 mounted to system PCB 650. The electrical connection between PCB 510 and system PCB 650 may be through bond wires 514 . To accommodate bond wires 514 on PCB 510 , PCB 510 may have I/O areas 512 that are not covered by radiation detector 100 . To accommodate bond wires 514 on system PCB 650, there may be gaps between packages 500. The gap may be about 1 mm or more. Radiation particles incident on perimeter area 195, I/O area 512, or gaps cannot be detected by package 500 on system PCB 650. The dead zone of a radiation detector (eg, radiation detector 100) is a region of the radiation receiving surface of the radiation detector upon which radiation particles incident on it cannot be detected by the radiation detector. The dead zone of a package (eg, package 500) is an area of the radiation-receiving surface of the package upon which radiation particles incident on it cannot be detected by one or more radiation detectors in the package. In the example shown in FIGS. 5 and 6 , the dead area of package 500 includes perimeter area 195 and I/O area 512 . The dead zone (e.g., 688) of an image sensor (e.g., image sensor 600) having a set of packages (e.g., packages 500 mounted on the same PCB and arranged in the same layer or in different layers) includes The combination of the dead space of the packages in the group and the gaps between packages.

In an embodiment, the self-operating radiation detector 100 (Fig. 1) may be considered an image sensor. In an embodiment, the package 500 (FIG. 5) operating on its own may be considered an image sensor.

Image sensor 600 including radiation detector 100 may have a dead zone 688 in active area 190 of radiation detector 100 . However, the image sensor 600 can capture multiple partial images of an object or scene (not shown) one by one, and then these captured partial images can be spliced to form a mosaic of the entire object or scene. picture.

The term "image" as used herein is not limited to the spatial distribution of radiation properties (eg, intensity). For example, the term "image" may also include a spatial distribution of the density of a substance or element.

imaging system

Figure 7 schematically shows a perspective view of an imaging system 700 according to an embodiment. In embodiments, imaging system 700 may include image sensor 710 and radiation source 720 .

In embodiments, image sensor 710 may be similar to image sensor 600 of FIG. 6 . For example, image sensor 710 may include nine active areas 190 arranged in 3 rows and 3 columns, as shown. In general, image sensor 710 may have any number of active areas 190 that may be arranged in any manner.

In embodiments, object 730 may be located between image sensor 710 and radiation source 720, as shown.

Imaging system operation

In embodiments, imaging system 700 may operate as follows. Radiation source 720 may send radiation beam 725 to object 730 . In embodiments, radiation beam 725 may include X-rays.

In embodiments, object 730 may rotate about an axis of rotation 735 perpendicular to an imaging plane (not shown) of image sensor 710 , where the imaging plane intersects all sensing elements 150 of image sensor 710 . That is, if all sensing elements 150 of the image sensor 710 are coplanar, the imaging plane may be a plane that actually intersects all the sensing elements 150 of the image sensor 710 . However, if all sensing elements 150 of image sensor 710 are not coplanar, then the imaging plane may be the best-fitting plane (eg, a least squares plane) of all sensing elements 150 of image sensor 710 .

In embodiments, image sensor 710 may translate back and forth relative to rotation axis 735 along a translation line 712 perpendicular to rotation axis 735 .

In embodiments, image sensor 710 may capture multiple images of object 730 while object 730 is rotating as described above, and while image sensor 710 is translating back and forth as described above. Specifically, image sensor 710 may capture each of a plurality of images of object 730 based on the interaction between radiation beam 725 and object 730 .

Interactions between radiation beam 725 and object 730 may include situations such as: (A) some radiation particles of radiation beam 725 incident on object 730 are blocked by object 730 , (B) incident on object 730 Some of the radiation particles of the radiation beam 725 pass through the object 730 without changing their direction, and (C) some of the radiation particles of the radiation beam 725 incident on the object 730 collide with atoms of the object 730 , thereby changing their direction.

Flowchart outlining the operation of the imaging system

Figure 8 shows a flowchart 800 summarizing the operation of the imaging system 700 of Figure 7, according to an embodiment.

In step 810, operations may include sending a radiation beam to the object. For example, in the embodiment described above, referring to FIG. 7 , radiation source 720 sends radiation beam 725 to object 730 .

Also in step 810, operations may include rotating the object about an axis of rotation perpendicular to an imaging plane of the image sensor, where the imaging plane intersects all sensing elements of the image sensor. For example, in the above-described embodiment, referring to FIG. 7 , the object 730 rotates about the rotation axis 735 perpendicular to the imaging plane of the image sensor 710 .

Also in step 810, the operation may include translating the image sensor back and forth relative to the axis of rotation along a translation line perpendicular to the axis of rotation. For example, in the above embodiment, referring to FIG. 7 , the image sensor 710 translates back and forth relative to the rotation axis 735 along a translation line 712 perpendicular to the rotation axis 735 .

In step 820, operations may include, for i=1,...,M and j=1,...,Ni, utilizing the image based on the interaction between the radiation beam and the object. The sensor captures an image (i, j) of the object, where M and Ni, i=1,..., M, are integers greater than 1, where each of the images (i, j) , i=1,...,M and j=1,...,Ni, are captured while performing the translation and while performing the rotation. For example, in the embodiment described above, referring to FIG. 7 , image sensor 710 captures each of a plurality of images of object 730 based on the interaction between radiation beam 725 and object 730 , where, as described above, the object Each of the plurality of images 730 is captured while object 730 is rotating and image sensor 710 is being translated back and forth.

Other embodiments

The gap between the active areas of the image sensor

In an embodiment, referring to FIG. 7 , the image sensor 710 may further include first gaps 195x between the active areas 190 , wherein each first gap 195x may be along the first direction Ox. In embodiments, the translation line 712 may be selected such that the translation line 712 is not parallel to the first direction Ox of the first gap 195x (eg, the translation line 712 may be selected to be perpendicular to the first direction Ox of the first gap 195x).

In an embodiment, the image sensor 710 may further include second gaps 195y between the active areas 190, wherein each second gap 195y may be along the second direction Oy. In an embodiment, the second direction Oy of the second gap 195y may be perpendicular to the first direction Ox of the first gap 195x.

In an embodiment, the rotation axis 735: (A) may intersect one of the active areas 190 of the image sensor 710 or one of the first gaps 195x, and (B) may not intersect any of the second gaps 195y. intersect. For example, as shown in FIG. 7 , the rotation axis 735 intersects the active area 190 of the image sensor 710 .

Translation amplitude

In an embodiment, referring to Figure 7, image sensor 710 may translate back and forth between a first end position and a second end position (not shown). The distance between the first end position and the second end position may be referred to as the translation amplitude. In embodiments, the translational amplitude of the back-and-forth translation of image sensor 710 may be greater than any width of any first gap 195x measured in a direction parallel to translation line 712 .

Image stitching

In an embodiment, referring to step 820 of FIG. 7 and FIG. 8 , after performing step 820, the image (i, j), i=1,..., M, j=1,... ...., Ni perform splicing to obtain a spliced image of object 730.

In an embodiment, the image sensor 710 may perform image (i, j) as described above, i=1,...,M, and j=1,..., Your splicing.

image capture

In an embodiment, referring to FIGS. 7 to 8 , the image (i, j), i=1,...,M, and j=1,...,Ni can be represented by the image Sensor 710 captures one image at a time. In other words, all images of object 730 captured by image sensor 710 are captured one image at a time.

In an embodiment, images (i,j), i=1,...,M, j=1,...,Ni may be captured one i value at a time. For example, the image (1, j) can be captured first, j=1,...,N1 (corresponding to i=1). Then, images (2,j), j=1,...,N2 (corresponding to i=2) can be captured. Then, one can capture images (3,j), j=1,...,N3 (corresponding to i=3), and so on. Note that the phrase "one i value at a time" does not include capturing an image (1,1), then an image (2,1), then an image (1,2).

In an embodiment, for each value of i, the rotation of the object 730 about the rotation axis 735 is negligible during the time period when the image (i,j), j=1,...,Ni is captured. Specifically, in the embodiment, for each i value, when the image (i,j),j=1,...,Ni is captured, each point of the object 730 is relative to the image sense. The radiation beam 725 on the imaging plane of the detector 710 has a shadow (i, j) respectively, j=1,..., Ni; and, the shadow (i, j) of each point on the imaging plane ), the distance between any two shadows in j=1,...,Ni cannot exceed any width of any sensing element 150 of the image sensor 710.

In other words, for each i value, the maximum distance between the two shadows of each point on the imaging plane (i, j), j=1,...,Ni is not exceeds the smallest dimension of any sensing element 150 of image sensor 710 .

axis of rotation and object

In embodiments, axis of rotation 735 may intersect object 730 as shown.

Examples of Operation of Imaging System 700

In an operational example of imaging system 700, referring to FIG. 7, image sensor 710 may include nine active areas 190 arranged in 3 rows and 3 columns, as shown. In an embodiment, the image sensor 710 may further include 2 first gaps 195x and 2 second gaps 195y between the 9 active areas 190, as shown in the figure. In addition, the first direction Ox of the first gap 195x may be perpendicular to the second direction Oy of the second gap 195y.

In embodiments, object 730 may rotate continuously (eg, counterclockwise) about a rotation axis 735 perpendicular to the imaging plane of image sensor 710 . Additionally, rotation axis 735 may intersect active area 190 of image sensor 710, as shown. In embodiments, axis of rotation 735 may intersect object 730 .

In an embodiment, while the object 730 is rotating about the rotation axis 735 as described above, the image sensor 710 may be between the first end position and the second end position along the translation line 712 that may be perpendicular to the rotation axis 735 Pan back and forth. Additionally, the translation line 712 may be perpendicular to the first direction Ox of the first gap 195x.

In an embodiment, the image sensor 710 may continuously translate back and forth between the first end position and the second end position (ie, the image sensor 710 only moves between the first end position and the second end position). stop). In embodiments, the translation amplitude may be greater than any width of any first gap 195x measured in a direction parallel to the translation line 712 .

first and second images of the object

In an embodiment, the image sensor 710 may capture the first image of the object 730 while the image sensor 710 is in the first end position and the object 730 is in the first angular position. Afterwards, when the image sensor 710 reaches the second end position and the object 730 reaches the second angular position, the image sensor 710 may capture a second image of the object 730 .

In an embodiment, when the first and second images are captured, each point of the object 730 has 2 shadows relative to the radiation beam 725 on the imaging plane of the image sensor 710, and each point The distance between the two shadows on the imaging plane may not exceed any width of any sensing element 150 of the image sensor 710 .

In the context of step 820 of Figure 8, the first image may be image (1,1) and the second image may be image (1,2). Here, i=1, N1=2.

Third and fourth images of objects

In an embodiment, after capturing the second image, object 730 may be rotated counterclockwise approximately 20 degrees to a third angular position while image sensor 710 is translated back and forth multiple times.

Then, in an embodiment, image sensor 710 may capture a third image of object 730 while image sensor 710 is in the first end position and object 730 is generally in a third angular position. Afterwards, when the image sensor 710 reaches the second end position and the object 730 reaches the fourth angular position, the image sensor 710 may capture a fourth image of the object 730 .

In an embodiment, when the third and fourth images are captured, each point of the object 730 has 2 shadows respectively relative to the radiation beam 725 on the imaging plane of the image sensor 710; and each point The distance between the two shadows on the imaging plane may not exceed any width of any sensing element 150 of the image sensor 710 .

In the context of step 820 of Figure 8, the third image may be image (2,1) and the fourth image may be image (2,2). Here, i=2, N2=2.

Additional images of objects

Then, in an embodiment, the process may continue in a similar manner until i=5, where all N1=N2=N3=N4=N5=2. Then, in an embodiment, the obtained 10 images of the object 730 (including the above-mentioned first, second, third and fourth images) may be spliced to form a spliced image of the object 730 .

Although various aspects and embodiments have been disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are for purposes of illustration and are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

2-2: Line 100: Radiation detector 111: First doped region 112:Eigen region 113: Second doping region 114: Discrete area 110: Radiation absorbing layer 119A, 119B: Electrical contacts 120: Electronic device layer 121: Electronic systems 130: Filling material 131:Through hole 150: Pixel/sensing element 190: Active area 195: Surrounding area 195x: first gap 195y:Second gap 500:Package 510: Printed circuit board (PCB) 512: Input/output (I/O) area 514:Joining wire 600, 710: Image sensor 650:System PCB 688:Dead zone 700: Imaging system 712:Translation line 720: Radiation source 725: Radiation Beam 730:Object 735:Rotation axis 800:Flowchart 810, 820: steps Ox: first direction Oy:Second direction

Figure 1 schematically shows a radiation detector according to an embodiment. Figure 2 schematically shows a simplified cross-sectional view of a radiation detector according to an embodiment. Figure 3 schematically shows a detailed cross-sectional view of a radiation detector according to an embodiment. Figure 4 schematically shows a detailed cross-sectional view of a radiation detector according to an alternative embodiment. Figure 5 schematically shows a top view of a radiation detector package including a radiation detector and a printed circuit board (PCB) according to an embodiment. Figure 6 schematically shows a cross-sectional view of an image sensor including the package of Figure 5 mounted to a system PCB (Printed Circuit Board), according to an embodiment. Figure 7 schematically shows a perspective view of an imaging system according to an embodiment. Figure 8 shows a flowchart summarizing the operation of an imaging system, according to an embodiment.

800:Flowchart

810, 820: steps

Claims (22)

A corresponding operation method of an imaging system includes: Send a beam of radiation to an object; rotating the object about an axis of rotation perpendicular to an imaging plane of the image sensor, wherein the imaging plane intersects all sensing elements of the image sensor; Translate the image sensor back and forth relative to the rotation axis along a translation line perpendicular to the rotation axis; and For i=1,...,M and j=1,...,Ni, based on the interaction between the radiation beam and the object, using the image sensor Capture the image (i, j) of the object, where M and Ni, i=1,...,M, are integers greater than 1, Each of the images (i, j), i=1,...,M and j=1,...,Ni, is performed while performing the translation. Perform the rotation while capturing. Corresponding operating method of the imaging system as described in claim 1, wherein the image sensor includes a plurality of active areas and a first gap between the plurality of active areas, and Each of the first gaps is along a first direction that is not parallel to the translation line. The corresponding operating method of the imaging system of claim 2, wherein the translation amplitude of the translation is greater than any width of any of the first gaps measured in a direction parallel to the translation line. The corresponding operating method of the imaging system as described in claim 2, wherein the image sensor further includes a second gap between the plurality of active areas, and Each of the second gaps is along a second direction perpendicular to the first direction. The corresponding operating method of the imaging system according to claim 4, wherein the rotation axis intersects an active area among the plurality of active areas or a gap among the first gaps, and does not intersect with the active area. intersect any of the second gaps. The corresponding operating method of the imaging system as described in claim 1 also includes splicing the images (i, j), i=1,...,M and j=1,... , Ni, thereby obtaining a spliced image of the object. The corresponding operating method of the imaging system according to claim 6, wherein the splicing is performed by the image sensor. The corresponding operating method of the imaging system according to claim 1, wherein the radiation beam includes X-rays. Corresponding operating method of the imaging system as described in claim 1, Wherein for each i value, when the image (i, j), j=1,..., Ni is captured, each point of the object is relative to the image sensor The radiation beams on the imaging plane respectively have shadows (i, j), j=1,...,Ni, Moreover, the distance between any two shadows (i,j) of each point on the imaging plane, j=1,...,Ni does not exceed the image sense. any width of any sensing element of the detector. Corresponding operating method of the imaging system as described in claim 9, where the images (i,j), i=1,...,M and j=1,...,Ni are captured one image at a time, and Wherein the image (i,j), i=1,...,M and j=1,...,Ni are captured one i value at a time. The corresponding operating method of the imaging system according to claim 1, wherein the rotation axis intersects the object. An imaging system including: a radiation source and an image sensor; wherein the radiation source is configured to emit a radiation beam toward the object; wherein the imaging system is configured to rotate the object about an axis of rotation perpendicular to an imaging plane of the image sensor; wherein the imaging plane intersects all sensing elements of the image sensor; wherein the image sensor is configured to translate back and forth relative to the rotation axis along a translation line perpendicular to the rotation axis; Wherein for i=1,...,M and j=1,...,Ni, the image sensor is configured to be based on the distance between the radiation beam and the object. The interaction captures the image (i,j) of the object, where M and Ni, i=1,...,M, are integers greater than 1, and Each of the images (i, j), i=1,...,M and j=1,...,Ni, is translating the image sensor captured simultaneously and while rotating the image sensor. An imaging system as claimed in claim 12, wherein the image sensor includes a plurality of active areas and a first gap between the plurality of active areas, and Each of the first gaps is along a first direction that is not parallel to the translation line. The imaging system of claim 13, wherein the translation amplitude of the translation of the image sensor is greater than any width of any of the first gaps measured in a direction parallel to the translation line. An imaging system as claimed in claim 13, wherein the image sensor further includes a second gap between the plurality of active areas, and Each of the second gaps is along a second direction perpendicular to the first direction. The imaging system of claim 15, wherein the rotation axis intersects an active area among the plurality of active areas or a gap among the first gaps, and does not intersect the second gap. intersect any gaps in . The imaging system of claim 12, wherein the imaging system is further configured to splice the images (i, j), i=1,...,M and j=1,... ...., Ni, thereby obtaining a spliced image of the object. The imaging system of claim 17, wherein the image sensor is configured to stitch the images (i, j), i=1,...,M and j=1, ......,Ni. The imaging system of claim 12, wherein the radiation beam includes X-rays. An imaging system as claimed in claim 12, Wherein for each i value, when the image (i, j), j=1,..., Ni is captured, each point of the object is relative to the image sensor The radiation beams on the imaging plane respectively have shadows (i, j), j=1,...,Ni, Moreover, the distance between any two shadows (i,j) of each point on the imaging plane, j=1,...,Ni does not exceed the image sense. any width of any sensing element of the detector. An imaging system as claimed in claim 20, where the images (i,j), i=1,...,M and j=1,...,Ni are captured one image at a time, and Wherein the image (i,j), i=1,...,M and j=1,...,Ni are captured one i value at a time. The imaging system of claim 12, wherein the axis of rotation intersects the object.

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