TW202405873A - Lower electrode assembly and plasma processing apparatus in which the bombardment direction and intensity of the plasma can be adjusted so as so to realize precise local adjustment and dynamic control of radio frequency electric field - Google Patents

Abstract

The present invention discloses a lower electrode assembly and a plasma processing apparatus. The lower electrode assembly comprises an electrostatic patterned electrode located on an electrostatic chuck, and a radio frequency patterned electrode. The electrostatic patterned electrode comprises a plurality of DC electrode units that are configured to suck a substrate. The radio frequency patterned electrode comprises a plurality of radio frequency electrode units that are configured to perform radio-frequency control on the plasma above the substrate. At least one electrostatic patterned electrode is above and corresponding to each radio frequency electrode unit. The radio frequency current is coupled to its corresponding DC electrode unit through the radio frequency electrode unit, and is then coupled to the upper electrode. The intensity of the radio frequency current input to each radio frequency electrode unit can be controlled such that the thickness of the corresponding plasma sheath above the radio frequency electrode unit can be adjusted. The bombardment direction and intensity of the plasma can be further adjusted so as to realize precise local adjustment and dynamic control of radio frequency electric field.

Description

Lower electrode assembly and plasma treatment device

The present invention relates to the field of semiconductor devices and their manufacturing, and in particular to a lower electrode assembly and its plasma treatment device.

The production of semiconductor devices such as integrated circuits, active and passive electronic components, and even some industrial products requires a variety of integration and auxiliary processes, such as deposition, etching, ion implantation, etc., using a variety of process equipment. Driven by Moore's Law, the precision of components is improving year by year. This is largely due to the continuous introduction of new technologies and methods. Among them, plasma, a dry process technology, plays a decisive role and has gradually become one of the core technologies of semiconductor processes.

In the plasma treatment device, a pair of parallel electrode plates (upper electrode and lower electrode) is configured in the reaction chamber. The radio frequency power source applies high frequency to the lower (or upper) electrode, usually to the lower electrode, and the radio frequency current flows from the lower electrode. Coupled to the upper electrode, and then grounded through the reaction cavity to form a radio frequency loop, a high-frequency electric field is formed between the electrodes, and the high-frequency electric field is used to excite the process gas into plasma. A bias power source is also applied to the lower electrode to control the plasma sheath thickness and DC bias. These plasmas undergo physical bombardment and chemical reactions with the substrate surface under the action of the electric field of the bias power source, thereby processing the substrate surface, such as cleaning or etching the substrate surface.

Since the plasma is roughly ellipsoidal, the plasma above the central area of the substrate is stronger (more densely distributed), and the plasma above the edge area of the substrate is weaker (distributed more sparsely), which results in a faster etching rate in the central area of the substrate. , The etching rate in the edge area is slow, and uneven etching occurs. Moreover, the plasma basically covers the entire substrate, making it difficult to perform local treatment on the substrate.

The present invention proposes a lower electrode assembly and a plasma treatment device. The electrostatic patterned electrode and the radio frequency patterned electrode in the lower electrode are divided into several DC electrode units and radio frequency electrode units respectively. The radio frequency current is coupled to and from the radio frequency electrode unit through the radio frequency electrode unit. The corresponding DC electrode unit of the RF electrode unit is then coupled to the upper electrode. By controlling the current intensity input to each RF electrode unit, the sheath thickness and DC bias of the corresponding plasma above the RF electrode unit can be adjusted. The pressure can be adjusted to adjust the bombardment direction and intensity of the plasma to achieve precise local adjustment and dynamic control of the radio frequency electric field.

In order to achieve the above objectives, the present invention proposes a lower electrode assembly for processing substrates, including: base; An electrostatic chuck located on the base is used to carry the substrate. The electrostatic chuck includes an electrostatic patterned electrode. The electrostatic patterned electrode includes a plurality of DC electrode units for adsorbing the substrate. ; A radio frequency patterned electrode is located between the base and the electrostatic chuck. The radio frequency patterned electrode includes a plurality of radio frequency electrode units and is used for radio frequency control of the generation or energy distribution of plasma above the substrate.

Optionally, there are multiple substrate processing areas above the electrostatic chuck, and below the same substrate processing area corresponds to at least one of the DC electrode unit and at least one of the radio frequency electrode unit; the same substrate processing area The number of corresponding DC electrode units is greater than or equal to the number of radio frequency electrode units.

Optionally, there is an insulating layer between the radio frequency patterned electrode and the base.

Optionally, a radio frequency blocking member is provided between two adjacent radio frequency electrode units to block radio frequency lateral coupling between the radio frequency electrode units.

Optionally, the electrostatic patterned electrode is connected to an electrostatic impedance network, the electrostatic impedance network includes a plurality of electrostatic impedance units, the electrostatic impedance unit is connected to the DC electrode unit, and is used to adjust the input to the Voltage signal on the DC electrode unit.

Optionally, the number of the electrostatic impedance units is equal to or less than the number of the DC electrode units.

Optionally, the electrostatic impedance unit is also connected to an electrostatic functional circuit, and the electrostatic functional circuit is used to adjust the impedance of the electrostatic impedance unit.

Optionally, the electrostatic impedance unit includes but is not limited to one or more of resistance and inductance.

Optionally, the radio frequency patterned electrode is connected to a radio frequency impedance network, and the radio frequency impedance network includes a plurality of radio frequency impedance units connected in one-to-one correspondence with the radio frequency electrode unit for adjusting the input to the radio frequency electrode. RF signals on the unit.

Optionally, the radio frequency impedance unit includes but is not limited to one or more types of resistance, inductance, and capacitance.

Optionally, the radio frequency impedance unit is also connected to a radio frequency functional circuit, and the radio frequency functional circuit is used to adjust the impedance of the radio frequency impedance unit.

The invention also proposes a plasma treatment device, including: A reaction chamber, the reaction chamber is provided with the above-mentioned lower electrode assembly; A voltage generator, the voltage generator is connected to the electrostatic impedance network and used to transmit voltage signals to the electrostatic patterned electrode; A radio frequency generator, the radio frequency generator is connected to the radio frequency impedance network and is used to transmit radio frequency signals to the radio frequency patterned electrode.

Optionally, the excitation generator is a DC high voltage source.

Optionally, the excitation source includes at least one radio frequency source.

Optionally, the radio frequency source is a bias radio frequency power source.

Optionally, the radio frequency source is a source radio frequency power source.

Optionally, the plasma processing device further includes: a controller, the controller is configured to send an adjustment signal to an electrostatic function circuit and a radio frequency function circuit, and the electrostatic function circuit and the radio frequency function circuit adjust according to the adjustment signal. Electrostatic impedance unit or radio frequency impedance unit.

Compared with the prior art, the present invention has the following beneficial effects:

(1) In the present invention, the electrostatic patterned electrode and the radio frequency patterned electrode respectively include multiple DC electrode units and multiple radio frequency electrode units, and the radio frequency current is coupled to the DC electrode unit corresponding to the radio frequency electrode unit through the radio frequency electrode unit, Then it is coupled to the upper electrode. By controlling the intensity of the radio frequency current input to each radio frequency electrode unit, the thickness of the corresponding plasma sheath above the radio frequency electrode unit can be adjusted, thereby adjusting the bombardment direction or intensity of the plasma to realize radio frequency Local precise adjustment and dynamic control of the electric field; (2) The present invention contains multiple DC electrode units. By controlling the charging speed of each DC electrode unit, the direction and sequence of adsorbing the substrate can be controlled to avoid electrostatic patterning of the entire electrode on the substrate. Substrate displacement caused by adsorbing the substrates together.

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making any progressive efforts fall within the scope of protection of the present invention.

It should be noted that in this article, the terms "include", "include", "have" or any other variation thereof are intended to cover a non-exclusive inclusion, such that a process, method, article or terminal device including a series of elements It includes not only those elements but also other elements not expressly listed or inherent to the process, method, article or terminal equipment. Without further limitation, an element defined by the statement "includes..." or "includes..." does not exclude the presence of additional elements in a process, method, article, or terminal device that includes the stated element.

It should be noted that the figures are in a very simplified form and use imprecise ratios, and are only used to conveniently and clearly assist in explaining an embodiment of the present invention.

Figure 1 illustrates a schematic structural diagram of a plasma treatment device. The plasma processing device includes a reaction chamber 2, which is used to process the substrate. The reaction chamber 2 contains an upper electrode assembly 1 and a lower electrode assembly 4 arranged opposite each other, and a processing area is formed between the upper and lower electrode assemblies. One or more high-frequency power sources (including source RF power sources and bias RF power sources) may be applied to the lower electrode assembly 4 individually or simultaneously to the upper electrode assembly 1 and the lower electrode assembly 4 within the treatment area. A high frequency electric field is formed. In this embodiment, a high-frequency power source is applied to the lower electrode assembly 4 . The high-frequency electric field accelerates a small amount of electrons existing in the processing area, causing them to collide with gas molecules of the process gas in the reaction chamber 2 . These collisions result in ionization of the reactive gases and excitation of the plasma, thereby generating a plasma within the processing chamber that substantially covers the entire substrate.

Figure 2 shows a schematic structural diagram of a lower electrode assembly. In the structure shown in this figure, the lower electrode assembly 4 includes: a base 11 for carrying the electrostatic chuck 8 . The base 11 is usually made of a conductive metal material, such as aluminum. When a high-frequency power source is connected to the base 11, the base 11 can be regarded as an equipotential body. In this embodiment, the base 11 is connected to an active radio frequency power source 5 for exciting and generating plasma. In other embodiments, the base 11 is connected to a bias radio frequency power source for controlling the energy distribution of the plasma. The electrostatic chuck 8 is used to adsorb and fix the substrate 3 , and is provided with an electrostatic patterned electrode 12 enclosed by a square dotted line frame. The electrostatic patterned electrode 12 includes a plurality of DC electrode units 15 . When the DC electrode unit 15 applies a positive DC voltage, the electric field generated by the DC electrode unit 15 will cause the fixed substrate 3 above the electrostatic chuck 8 to be polarized. In order to neutralize the charge generated by the substrate, an electric field is generated on the surface of the substrate. Negative potential and the Coulomb force generated between potentials of different polarities can cause the fixed substrate 3 to be adsorbed on the electrostatic chuck 8 . The electrostatic chuck 8 may adopt a ceramic structure.

Continuing to show in Figure 2, a radio frequency patterned electrode 9 enclosed by an oval dotted line is also disposed between the base 11 and the electrostatic chuck 8. The radio frequency patterned electrode 9 and the base 11 An insulation layer 10 is arranged between them. The radio frequency patterned electrode 9 includes a plurality of radio frequency electrode units 14 , and above the radio frequency electrode unit 14 corresponds to at least one DC electrode unit 15 .

When the radio frequency power source is connected to the radio frequency electrode unit 14, because there is a DC electrode unit 15 between the fixed substrate 3 and the radio frequency electrode unit 14, the radio frequency current will first be coupled to the direction corresponding to the radio frequency electrode unit 14. on the DC electrode unit 15, and then acts on the plasma sheath of the reaction area. Therefore, according to the distribution of the radio frequency patterned electrode and the electrostatic patterned electrode, the treatment area can be divided into corresponding Several substrate processing areas. At least one DC electrode unit 15 and at least one RF electrode unit 14 correspond below the same substrate processing area, and the number of corresponding DC electrode units 15 in the same substrate processing area is greater than or equal to the number of RF electrode units 14 . By controlling the size of the radio frequency current on each radio frequency electrode unit, the energy distribution of the plasma in different substrate processing areas can be controlled respectively, achieving local precise adjustment and dynamic control of the radio frequency electric field. If the number of corresponding DC electrode units in the same substrate processing area is less than the number of RF electrode units, that is, multiple RF electrode units correspond to one DC electrode unit, which will cause different RF currents on the multiple RF electrode units to be coupled to The same DC electrode unit is then applied to the processing area, resulting in the mixing of multiple RF signals on the same DC electrode unit, which will weaken the precise adjustment effect on the substrate processing area. Lateral coupling may occur between the radio frequency electrode units 14. To prevent radio frequency crosstalk, a radio frequency blocking member 13 is provided between two adjacent radio frequency electrode units 14.

In this embodiment, the radio frequency patterned electrode 9 includes five radio frequency electrode units, as shown in the solid line part in Figure 3, which are: the first radio frequency electrode unit 1401 located in the center of the radio frequency patterned electrode 9, and The second radio frequency electrode unit 1402, the third radio frequency electrode unit 1403, the fourth radio frequency electrode unit 1404 and the fifth radio frequency electrode unit 1405 are concentric and fan-shaped with the first radio frequency electrode unit 1401. Two adjacent radio frequency electrode units Radio frequency blocking pieces 13 are arranged between them. In this embodiment, each radio frequency electrode unit corresponds to a DC electrode unit, that is, the electrostatic patterned electrode also includes five DC electrode units. Since the electrostatic patterned electrode 12 overlaps with the radio frequency patterned electrode 9, the dotted line portion is used to represent the electrostatic patterned electrode, and its graphical mark is represented in parentheses. As shown in the dotted line in Figure 3, the electrostatic patterned electrode 12 includes: a first DC electrode unit 1501 located in the center of the electrostatic patterned electrode 12, and four concentric with the first DC electrode unit 1501. and a fan-shaped second DC electrode unit 1502.

Continuing as shown in FIG. 1 , the plasma treatment device also includes a radio frequency generator 6 , a voltage generator 7 and a controller (not shown in the figure) located outside the reaction chamber 2 . The controller is used to send adjustment signals.

The radio frequency generator 6 is used to deliver radio frequency signals to the plurality of radio frequency electrode units 14 in the radio frequency patterned electrode 9 . The radio frequency generator 6 includes at least one radio frequency source and delivers radio frequency signals of the same or different sizes to the plurality of radio frequency electrode units 14 . The radio frequency source is a source radio frequency power source or a bias radio frequency power source. In this embodiment, the radio frequency source is a bias radio frequency power source. In other embodiments, the radio frequency source is a source radio frequency power source. That is, the high-frequency power source connected to the base is different from the high-frequency power source connected to the radio frequency electrode patterned electrode.

In order to reduce the number of radio frequency sources, the radio frequency generator 6 is electrically connected to the radio frequency patterned electrode 9 through a radio frequency impedance network. The radio frequency impedance network can be located inside the reaction chamber 2 or outside the reaction chamber 2, which is not limited by the present invention.

The radio frequency impedance network includes a plurality of radio frequency impedance units, and the plurality of radio frequency impedance units are respectively connected to the plurality of radio frequency electrode units 14 in the radio frequency patterned electrode 9 in a one-to-one correspondence. The radio frequency impedance unit is also connected to a radio frequency functional circuit 16. The radio frequency functional circuit 16 is connected to the controller and is used to adjust the impedance value of the radio frequency impedance unit according to the adjustment signal sent by the controller. By adjusting the impedance value of the radio frequency impedance unit, the size of the radio frequency signal input to each radio frequency electrode unit 14 can be adjusted, and then the energy distribution of the plasma in the substrate processing area corresponding to the radio frequency electrode unit 14 can be adjusted to achieve Precise local adjustment and dynamic control of radiofrequency electric fields.

The radio frequency impedance unit includes but is not limited to one or more of resistors, capacitors, and inductors. In this embodiment, the radio frequency impedance unit includes a resistor, and the radio frequency functional circuit 16 adjusts the resistance value of the radio frequency impedance unit, thereby adjusting the response of the radio frequency electrode unit 14 to the radio frequency signal, and thereby adjusting the corresponding base of the radio frequency electrode unit 14. The bombardment intensity of the plasma in the chip processing area.

In addition, this embodiment can also adjust the bombardment direction of plasma in the substrate processing area. As shown in Figure 4, in this embodiment, the radio frequency generator 6 includes two bias radio frequency power sources, which are a first bias radio frequency power source 601 and a second bias radio frequency power source 602. Wherein, the first bias radio frequency power source 601 is connected to the first radio frequency electrode unit 1401 and the second radio frequency electrode unit 1402 respectively through the first radio frequency impedance unit 301 and the second radio frequency impedance unit 302. The second bias radio frequency The power source 602 is connected to the third radio frequency electrode unit 1403 through the third radio frequency impedance unit 303. By adjusting the impedance values of the first radio frequency impedance unit 301, the second radio frequency impedance unit 302 and the third radio frequency impedance unit 303, the first radio frequency electric field in the first substrate processing area corresponding to the first radio frequency electrode unit 1401 is , the second radio frequency electric field in the second-level substrate processing area corresponding to the second radio frequency electrode unit 1402 is relatively strong, and makes the third radio frequency electric field in the third substrate processing area corresponding to the third radio frequency electrode unit 1403 If the third radio frequency electric field is weak, the direction of the combined electric field generated by the first radio frequency electric field, the second radio frequency electric field and the third radio frequency electric field at point A in the third substrate processing area will be tilted, so the bombardment of plasma here can be controlled. direction. In other embodiments, the same radio frequency power source can be used for multiple radio frequency electrode units and the impedance unit can be used to adjust the corresponding radio frequency current.

The voltage generator 7 is a DC high-voltage source, used for transmitting voltage signals to the plurality of DC electrode units 15 in the electrostatic patterned electrode 12 . When a voltage signal is applied to the DC electrode unit 15, the DC electrode unit 15 starts to charge, generating a Coulomb force to adsorb the substrate. By controlling the voltage of each DC electrode unit 15 to have different charging speeds, the order in which multiple DC electrode units 15 adsorb the substrate can be controlled, thereby adsorbing the substrate in separate areas and preventing all DC electrode units 15 from adsorbing together. It can also prevent the substrate from being displaced when the substrate is attached to the electrostatic chuck 8 and avoid air bubbles remaining between the substrate and the electrostatic chuck 8 . The displacement of the substrate will reduce the accuracy of etching, and residual bubbles can easily cause the substrate to break.

In order to achieve zoned adsorption of the substrate, the voltage generator 7 is electrically connected to the electrostatic patterned electrode 12 through an electrostatic impedance network. The electrostatic impedance network may be located inside the reaction chamber 2 or outside the reaction chamber 2, which is not limited by the present invention. The electrostatic impedance network includes a plurality of electrostatic impedance units, and the plurality of electrostatic impedance units can be connected to a plurality of the DC electrode units 15 one-to-one or one-to-many. By adjusting the impedance value of the electrostatic impedance unit, the voltage signal transmitted to the DC electrode unit 15 through the electrostatic impedance unit can be adjusted, and the order in which the DC electrode unit 15 adsorbs the substrate can be adjusted to realize the partitioning of the substrate. Adsorption.

The electrostatic impedance unit is also connected to an electrostatic functional circuit 17. The electrostatic functional circuit 17 is connected to the controller and is used to adjust the impedance value of the electrostatic impedance unit according to the adjustment signal sent by the controller. At the same time, the electrostatic impedance unit The functional circuit 17 may also have a radio frequency filtering function to prevent radio frequency signals from leaking to the DC high voltage source through the DC electrode unit 15 . Further, the radio frequency functional circuit 16 and the electrostatic functional circuit 17 can be integrated on a PCB board.

As shown in FIG. 5 , in this embodiment, the electrostatic impedance network includes two electrostatic impedance units, which are a first electrostatic impedance unit 401 and a second electrostatic impedance unit 402 . The first electrostatic impedance unit 401 is connected to the first DC electrode unit 201, and the second electrostatic impedance unit 402 is connected to the four second DC electrode units 202 respectively. By adjusting the impedance values of the first electrostatic impedance unit 401 and the second electrostatic impedance unit 402, the voltage signal on the first DC electrode unit 201 is larger and the voltage signal on the second DC electrode unit 202 is smaller, so that the first DC electrode unit 201 has a smaller voltage signal. The current electrode unit 201 first absorbs the central area of the wafer, and then the second DC electrode unit 202 absorbs the edge area of the wafer. Such an adsorption sequence can effectively discharge the remaining air bubbles between the fixed substrate 3 and the electrostatic chuck 8 to ensure the flatness of the substrate. Moreover, local adsorption and positioning of the substrate can prevent the substrate from shifting.

The electrostatic impedance unit includes but is not limited to one or more of resistance and inductance. When the electrostatic impedance unit includes a resistor, the electrostatic functional circuit 17 adjusts the resistance value of the electrostatic impedance unit, thereby adjusting the response characteristics of the DC electrode unit 15 to the voltage signal; when the electrostatic impedance unit includes an inductor, it can effectively prevent The radio frequency electric field coupled to the DC electrode unit 15 leaks out of the reaction chamber 2 through the circuit, causing damage to other equipment.

The present invention divides the electrostatic patterned electrode 12 and the radio frequency patterned electrode 9 into a plurality of DC electrode units 15 and a plurality of radio frequency electrode units 14. Each radio frequency electrode unit 14 corresponds to at least one DC electrode unit 15 above. When the radio frequency electrode When a radio frequency signal is connected to the unit 14, the radio frequency current is first coupled to the DC electrode unit 15 corresponding to the radio frequency electrode unit 14, then coupled to the upper electrode assembly 1, and finally grounded through the reaction chamber 2 shell to form a radio frequency loop. By controlling the intensity of the radio frequency current input to each radio frequency electrode unit 14, the sheath thickness and DC bias size of the corresponding plasma above the radio frequency electrode unit 14 can be adjusted, thereby adjusting the bombardment direction and intensity of the plasma to achieve radio frequency Local precise adjustment and dynamic control of electric fields. In addition, by controlling the magnitude of the voltage signal input to each DC electrode unit 15, the direction and order of adsorbing the substrate by the electrostatic patterned electrode 12 can be controlled, thereby avoiding the substrate displacement problem caused by simultaneous adsorption of all DC electrode units 15. At the same time, the unevenness of the substrate caused by air bubbles remaining between the substrate and the electrostatic chuck 8 can also be avoided.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above. Therefore, the protection scope of the present invention should be limited by the appended patent application scope.

1: Upper electrode assembly 2: Reaction chamber 3: Fixed substrate 4: Lower electrode assembly 5: Source RF power source 6: RF generator 7: Voltage generator 8:Electrostatic chuck 9: RF patterned electrode 10: Insulation layer 11: base 12: Electrostatic patterning electrode 13:RF blocking parts 14:RF electrode unit 15: DC electrode unit 16:RF functional circuit 17: Electrostatic function circuit 1401: First RF electrode unit 1402: Second radio frequency electrode unit 1403: The third radio frequency electrode unit 1404: The fourth radio frequency electrode unit 1405: The fifth radio frequency electrode unit 1501: First DC electrode unit 1502: Second DC electrode unit 201: First DC electrode unit 202: Second DC electrode unit 301: First RF impedance unit 302: Second radio frequency impedance unit 303: The third radio frequency impedance unit 401: First electrostatic impedance unit 402: Second electrostatic impedance unit 601: First bias RF power source 602: Second bias RF power source

Figure 1 is a schematic structural diagram of the plasma sub-processing device in this embodiment. Figure 2 is a schematic structural diagram of the lower electrode assembly in this embodiment. Figure 3 is a bottom view of the radio frequency patterned electrode and the electrostatic patterned electrode looking from the base end to the electrostatic chuck end in this embodiment. Figure 4 is a schematic diagram of the circuit connection of the radio frequency patterned electrode in this embodiment. Figure 5 is a schematic diagram of the circuit connection of the electrostatic patterning electrode in this embodiment.

3: Fixed substrate

5: Source RF power source

6: RF generator

8:Electrostatic chuck

9: RF patterned electrode

10: Insulation layer

11: base

12: Electrostatic patterning electrode

13:RF blocking parts

14:RF electrode unit

15: DC electrode unit

Claims (17)

A lower electrode assembly for processing a substrate, including: base; An electrostatic chuck, the electrostatic chuck is located on the base and is used to carry the substrate. The electrostatic chuck includes an electrostatic patterned electrode, and the electrostatic patterned electrode includes a plurality of DC electrode units for adsorb the substrate; A radio frequency patterned electrode is located between the base and the electrostatic chuck. The radio frequency patterned electrode includes a plurality of radio frequency electrode units for radio frequency control of plasma generation or energy distribution above the substrate. The lower electrode assembly according to claim 1, wherein there are multiple substrate processing areas above the electrostatic chuck, and at least one of the DC electrode units and at least one of the radio frequency electrode units are located below the same substrate processing area. ; The number of the DC electrode units corresponding to the same substrate processing area is greater than or equal to the number of the RF electrode units. The lower electrode assembly of claim 1, wherein there is an insulating layer between the radio frequency patterned electrode and the base. The lower electrode assembly according to claim 1, wherein a radio frequency barrier is provided between two adjacent radio frequency electrode units. The lower electrode assembly according to claim 1, wherein the electrostatic patterned electrode is connected to an electrostatic impedance network, the electrostatic impedance network includes a plurality of electrostatic impedance units, and the electrostatic impedance unit is connected to the DC electrode unit , used to adjust the voltage signal input to the DC electrode unit. The lower electrode assembly according to claim 5, wherein the number of the electrostatic impedance units is equal to or less than the number of the direct current electrode units. The lower electrode assembly according to claim 5, wherein the electrostatic impedance unit is further connected to an electrostatic functional circuit, and the electrostatic functional circuit is used to adjust the impedance of the electrostatic impedance unit. The lower electrode assembly according to claim 5, wherein the electrostatic impedance unit includes but is not limited to one or more of resistance and inductance. The lower electrode assembly according to claim 1, wherein the radio frequency patterned electrode is connected to a radio frequency impedance network, and the radio frequency impedance network includes a plurality of radio frequency impedance units connected to the radio frequency electrode unit in a one-to-one correspondence. To adjust the radio frequency signal input to the radio frequency electrode unit. The lower electrode assembly according to claim 9, wherein the radio frequency impedance unit includes but is not limited to one or more of a resistor, an inductor, and a capacitor. The lower electrode assembly according to claim 9, wherein the radio frequency impedance unit is further connected to a radio frequency functional circuit, and the radio frequency functional circuit is used to adjust the impedance of the radio frequency impedance unit. A plasma treatment device including: A reaction chamber, the reaction chamber is provided with the lower electrode assembly as described in any one of claims 1 to 11; A voltage generator, the voltage generator is connected to the electrostatic impedance network and used to transmit voltage signals to the electrostatic patterned electrode; A radio frequency generator, the radio frequency generator is connected to the radio frequency impedance network and is used to transmit radio frequency signals to the radio frequency patterned electrode. The plasma processing device according to claim 12, wherein the voltage generator is a direct current high voltage source. The plasma processing device of claim 12, wherein the radio frequency generator includes at least one radio frequency source. The plasma processing device of claim 14, wherein the radio frequency source is a bias radio frequency power source. The plasma processing device of claim 14, wherein the radio frequency source is a source radio frequency power source. The plasma processing device according to claim 12, further comprising: a controller configured to send an adjustment signal to an electrostatic function circuit and a radio frequency function circuit, and the electrostatic function circuit and the radio frequency function circuit are configured according to the Conditioning signal conditioning electrostatic impedance unit or radio frequency impedance unit.