TW202405042A - 阻劑下層膜形成組成物 - Google Patents
阻劑下層膜形成組成物 Download PDFInfo
- Publication number
- TW202405042A TW202405042A TW112110162A TW112110162A TW202405042A TW 202405042 A TW202405042 A TW 202405042A TW 112110162 A TW112110162 A TW 112110162A TW 112110162 A TW112110162 A TW 112110162A TW 202405042 A TW202405042 A TW 202405042A
- Authority
- TW
- Taiwan
- Prior art keywords
- ring
- aromatic
- group
- underlayer film
- resist underlayer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
- C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
- C08G12/04—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
- C08G12/06—Amines
- C08G12/08—Amines aromatic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022051965 | 2022-03-28 | ||
| JP2022-051965 | 2022-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202405042A true TW202405042A (zh) | 2024-02-01 |
Family
ID=88201076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112110162A TW202405042A (zh) | 2022-03-28 | 2023-03-20 | 阻劑下層膜形成組成物 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2023189803A1 (https=) |
| KR (1) | KR20240167851A (https=) |
| CN (1) | CN118974659A (https=) |
| TW (1) | TW202405042A (https=) |
| WO (1) | WO2023189803A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025192444A1 (ja) * | 2024-03-15 | 2025-09-18 | 日産化学株式会社 | レジスト下層膜形成用組成物、レジスト下層膜、レジストパターンの形成方法、及び半導体装置の製造方法 |
| WO2025192457A1 (ja) * | 2024-03-15 | 2025-09-18 | 日産化学株式会社 | レジスト下層膜形成用組成物、レジスト下層膜、レジストパターンの形成方法、及び半導体装置の製造方法 |
| WO2025205630A1 (ja) * | 2024-03-27 | 2025-10-02 | 日産化学株式会社 | レジスト下層膜形成用組成物、レジスト下層膜、レジストパターンの形成方法、及び半導体装置の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4945091B1 (https=) | 1970-08-20 | 1974-12-02 | ||
| JPS6256719U (https=) | 1985-09-26 | 1987-04-08 | ||
| JPH0515035Y2 (https=) | 1986-08-26 | 1993-04-21 | ||
| US9244353B2 (en) | 2012-08-10 | 2016-01-26 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition |
| US9395628B2 (en) * | 2013-02-25 | 2016-07-19 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition containing aryl sulfonate salt having hydroxyl group |
| US10429737B2 (en) | 2017-09-21 | 2019-10-01 | Rohm And Haas Electronic Materials Korea Ltd. | Antireflective compositions with thermal acid generators |
| CN117015746A (zh) * | 2021-03-15 | 2023-11-07 | 日产化学株式会社 | 包含酸催化剂负载型聚合物的抗蚀剂下层膜形成用组合物 |
-
2023
- 2023-03-20 KR KR1020247035242A patent/KR20240167851A/ko active Pending
- 2023-03-20 CN CN202380031452.3A patent/CN118974659A/zh active Pending
- 2023-03-20 TW TW112110162A patent/TW202405042A/zh unknown
- 2023-03-20 JP JP2024511869A patent/JPWO2023189803A1/ja active Pending
- 2023-03-20 WO PCT/JP2023/010827 patent/WO2023189803A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023189803A1 (ja) | 2023-10-05 |
| KR20240167851A (ko) | 2024-11-28 |
| CN118974659A (zh) | 2024-11-15 |
| JPWO2023189803A1 (https=) | 2023-10-05 |
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