KR20240167851A - 레지스트 하층막 형성 조성물 - Google Patents

레지스트 하층막 형성 조성물 Download PDF

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Publication number
KR20240167851A
KR20240167851A KR1020247035242A KR20247035242A KR20240167851A KR 20240167851 A KR20240167851 A KR 20240167851A KR 1020247035242 A KR1020247035242 A KR 1020247035242A KR 20247035242 A KR20247035242 A KR 20247035242A KR 20240167851 A KR20240167851 A KR 20240167851A
Authority
KR
South Korea
Prior art keywords
group
forming
aromatic
ring
resist underlayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247035242A
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English (en)
Korean (ko)
Inventor
히카루 토쿠나가
마코토 나카지마
히로카즈 니시마키
Original Assignee
닛산 가가쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛산 가가쿠 가부시키가이샤 filed Critical 닛산 가가쿠 가부시키가이샤
Publication of KR20240167851A publication Critical patent/KR20240167851A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
    • C08G12/04—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
    • C08G12/06—Amines
    • C08G12/08—Amines aromatic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
KR1020247035242A 2022-03-28 2023-03-20 레지스트 하층막 형성 조성물 Pending KR20240167851A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022051965 2022-03-28
JPJP-P-2022-051965 2022-03-28
PCT/JP2023/010827 WO2023189803A1 (ja) 2022-03-28 2023-03-20 レジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
KR20240167851A true KR20240167851A (ko) 2024-11-28

Family

ID=88201076

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247035242A Pending KR20240167851A (ko) 2022-03-28 2023-03-20 레지스트 하층막 형성 조성물

Country Status (5)

Country Link
JP (1) JPWO2023189803A1 (https=)
KR (1) KR20240167851A (https=)
CN (1) CN118974659A (https=)
TW (1) TW202405042A (https=)
WO (1) WO2023189803A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025192444A1 (ja) * 2024-03-15 2025-09-18 日産化学株式会社 レジスト下層膜形成用組成物、レジスト下層膜、レジストパターンの形成方法、及び半導体装置の製造方法
WO2025192457A1 (ja) * 2024-03-15 2025-09-18 日産化学株式会社 レジスト下層膜形成用組成物、レジスト下層膜、レジストパターンの形成方法、及び半導体装置の製造方法
WO2025205630A1 (ja) * 2024-03-27 2025-10-02 日産化学株式会社 レジスト下層膜形成用組成物、レジスト下層膜、レジストパターンの形成方法、及び半導体装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945091B1 (https=) 1970-08-20 1974-12-02
JPS6256719U (https=) 1985-09-26 1987-04-08
JPS6334900U (https=) 1986-08-26 1988-03-05
WO2014024836A1 (ja) 2012-08-10 2014-02-13 日産化学工業株式会社 レジスト下層膜形成組成物
JP2019056903A (ja) 2017-09-21 2019-04-11 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド 熱酸発生剤を含む反射防止組成物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9395628B2 (en) * 2013-02-25 2016-07-19 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing aryl sulfonate salt having hydroxyl group
CN117015746A (zh) * 2021-03-15 2023-11-07 日产化学株式会社 包含酸催化剂负载型聚合物的抗蚀剂下层膜形成用组合物

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945091B1 (https=) 1970-08-20 1974-12-02
JPS6256719U (https=) 1985-09-26 1987-04-08
JPS6334900U (https=) 1986-08-26 1988-03-05
WO2014024836A1 (ja) 2012-08-10 2014-02-13 日産化学工業株式会社 レジスト下層膜形成組成物
JP2019056903A (ja) 2017-09-21 2019-04-11 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド 熱酸発生剤を含む反射防止組成物

Also Published As

Publication number Publication date
WO2023189803A1 (ja) 2023-10-05
CN118974659A (zh) 2024-11-15
TW202405042A (zh) 2024-02-01
JPWO2023189803A1 (https=) 2023-10-05

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