CN118974659A - 抗蚀剂下层膜形成用组合物 - Google Patents

抗蚀剂下层膜形成用组合物 Download PDF

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Publication number
CN118974659A
CN118974659A CN202380031452.3A CN202380031452A CN118974659A CN 118974659 A CN118974659 A CN 118974659A CN 202380031452 A CN202380031452 A CN 202380031452A CN 118974659 A CN118974659 A CN 118974659A
Authority
CN
China
Prior art keywords
group
ring
underlayer film
resist underlayer
aromatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380031452.3A
Other languages
English (en)
Chinese (zh)
Inventor
德永光
中岛诚
西卷裕和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN118974659A publication Critical patent/CN118974659A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
    • C08G12/04—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
    • C08G12/06—Amines
    • C08G12/08—Amines aromatic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
CN202380031452.3A 2022-03-28 2023-03-20 抗蚀剂下层膜形成用组合物 Pending CN118974659A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022051965 2022-03-28
JP2022-051965 2022-03-28
PCT/JP2023/010827 WO2023189803A1 (ja) 2022-03-28 2023-03-20 レジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
CN118974659A true CN118974659A (zh) 2024-11-15

Family

ID=88201076

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380031452.3A Pending CN118974659A (zh) 2022-03-28 2023-03-20 抗蚀剂下层膜形成用组合物

Country Status (5)

Country Link
JP (1) JPWO2023189803A1 (https=)
KR (1) KR20240167851A (https=)
CN (1) CN118974659A (https=)
TW (1) TW202405042A (https=)
WO (1) WO2023189803A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025192444A1 (ja) * 2024-03-15 2025-09-18 日産化学株式会社 レジスト下層膜形成用組成物、レジスト下層膜、レジストパターンの形成方法、及び半導体装置の製造方法
WO2025192457A1 (ja) * 2024-03-15 2025-09-18 日産化学株式会社 レジスト下層膜形成用組成物、レジスト下層膜、レジストパターンの形成方法、及び半導体装置の製造方法
WO2025205630A1 (ja) * 2024-03-27 2025-10-02 日産化学株式会社 レジスト下層膜形成用組成物、レジスト下層膜、レジストパターンの形成方法、及び半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945091B1 (https=) 1970-08-20 1974-12-02
JPS6256719U (https=) 1985-09-26 1987-04-08
JPH0515035Y2 (https=) 1986-08-26 1993-04-21
US9244353B2 (en) 2012-08-10 2016-01-26 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition
US9395628B2 (en) * 2013-02-25 2016-07-19 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing aryl sulfonate salt having hydroxyl group
US10429737B2 (en) 2017-09-21 2019-10-01 Rohm And Haas Electronic Materials Korea Ltd. Antireflective compositions with thermal acid generators
CN117015746A (zh) * 2021-03-15 2023-11-07 日产化学株式会社 包含酸催化剂负载型聚合物的抗蚀剂下层膜形成用组合物

Also Published As

Publication number Publication date
WO2023189803A1 (ja) 2023-10-05
KR20240167851A (ko) 2024-11-28
TW202405042A (zh) 2024-02-01
JPWO2023189803A1 (https=) 2023-10-05

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