TW202401803A - 光電轉換裝置、光電轉換系統 - Google Patents

光電轉換裝置、光電轉換系統 Download PDF

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Publication number
TW202401803A
TW202401803A TW112117864A TW112117864A TW202401803A TW 202401803 A TW202401803 A TW 202401803A TW 112117864 A TW112117864 A TW 112117864A TW 112117864 A TW112117864 A TW 112117864A TW 202401803 A TW202401803 A TW 202401803A
Authority
TW
Taiwan
Prior art keywords
photoelectric conversion
resistive element
conversion device
semiconductor layer
avalanche photodiode
Prior art date
Application number
TW112117864A
Other languages
English (en)
Chinese (zh)
Inventor
森本和浩
Original Assignee
日商佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商佳能股份有限公司 filed Critical 日商佳能股份有限公司
Publication of TW202401803A publication Critical patent/TW202401803A/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW112117864A 2022-06-29 2023-05-15 光電轉換裝置、光電轉換系統 TW202401803A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022104636A JP2024004797A (ja) 2022-06-29 2022-06-29 光電変換装置、光電変換システム
JP2022-104636 2022-06-29

Publications (1)

Publication Number Publication Date
TW202401803A true TW202401803A (zh) 2024-01-01

Family

ID=89382762

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112117864A TW202401803A (zh) 2022-06-29 2023-05-15 光電轉換裝置、光電轉換系統

Country Status (4)

Country Link
US (1) US20250126921A1 (https=)
JP (1) JP2024004797A (https=)
TW (1) TW202401803A (https=)
WO (1) WO2024004516A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025119202A1 (zh) * 2023-12-04 2025-06-12 上海禾赛科技有限公司 用于光探测器的淬灭电路及探测电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP7757026B2 (ja) * 2019-11-20 2025-10-21 キヤノン株式会社 撮像装置、撮像システム、および移動体
TW202537459A (zh) * 2020-02-27 2025-09-16 日商索尼半導體解決方案公司 受光元件、光學裝置及電子機器

Also Published As

Publication number Publication date
WO2024004516A1 (ja) 2024-01-04
US20250126921A1 (en) 2025-04-17
JP2024004797A (ja) 2024-01-17

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