TW202401635A - Semiconductor process equipment, a process chamber thereof and a detection method of a tray - Google Patents

Semiconductor process equipment, a process chamber thereof and a detection method of a tray Download PDF

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TW202401635A
TW202401635A TW112120052A TW112120052A TW202401635A TW 202401635 A TW202401635 A TW 202401635A TW 112120052 A TW112120052 A TW 112120052A TW 112120052 A TW112120052 A TW 112120052A TW 202401635 A TW202401635 A TW 202401635A
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sub
tray
flow channel
temperature
channel
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TW112120052A
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李世凱
董博宇
鄧曉軍
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大陸商北京北方華創微電子裝備有限公司
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Publication of TW202401635A publication Critical patent/TW202401635A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Radiation Pyrometers (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Semiconductor process equipment, a process chamber thereof and a detection method of a tray. The process chamber comprises a process cavity, a tray, a first heating body, a rotating shaft component, and an infrared thermometer, wherein the first heating body comprises a first heating plate; the tray is rotatbly arranged on the top surface of the first heating plate; the rotating shaft component includes a rotating shaft and a temperature marking element. The rotating shaft passes through the first heating plate and rotates in conjunction with the first heating plate. The first end of the rotating shaft is connected to the tray, enabling the rotating shaft to rotate with the tray. The second end of the rotating shaft extends and protrudes from the bottom surface of the first heating plate. The temperature marking element is set at the second end of the rotating shaft and can rotate with the rotating shaft. The infrared thermometer is used to detect the temperature of the temperature marker rotating to the preset temperature detection position, in order to periodically obtain the temperature of the temperature marker.

Description

半導體製程設備及其製程腔室和托盤的檢測方法Semiconductor process equipment and inspection methods for process chambers and trays

本申請涉及半導體製造技術領域,尤其涉及一種半導體製程設備及製程腔室和托盤的檢測方法。The present application relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor processing equipment and a method for detecting process chambers and trays.

在半導體晶圓的制程中,外延生長製程是極為重要的環節。外延生長製程即是指,在晶圓表面生長具有一定要求的、與晶圓晶向相同的單晶層,以延展晶圓表面的晶體。In the semiconductor wafer manufacturing process, the epitaxial growth process is an extremely important link. The epitaxial growth process refers to growing a single crystal layer with certain requirements and the same crystal orientation as the wafer on the wafer surface to extend the crystal on the wafer surface.

在相關技術中,外延生長設備包括托盤、上加熱體和下加熱體,托盤設於上、下加熱體之間,並由上、下加熱體共同加熱托盤,且托盤具備旋轉功能,以通過旋轉而使放置於托盤上的晶圓均勻受熱。由於上加熱體和下加熱體外包裹有保溫氈,因此紅外高溫計無法直接安裝在托盤的上方,以檢測托盤的溫度。由於托盤的溫度和轉速與晶圓外延薄膜的均勻性密切相關,因此外延生長設備還設有用於檢測托盤溫度的測溫裝置,以及檢測托盤轉速的測速裝置,然而,測溫裝置和測速裝置會導致外延生長設備的結構過於複雜。In related technologies, epitaxial growth equipment includes a tray, an upper heating body and a lower heating body. The tray is located between the upper and lower heating bodies, and the upper and lower heating bodies jointly heat the tray, and the tray has a rotation function to rotate. This allows the wafers placed on the tray to be heated evenly. Since the upper heating body and the lower heating body are wrapped with insulation felt, the infrared pyrometer cannot be installed directly above the tray to detect the temperature of the tray. Since the temperature and rotation speed of the tray are closely related to the uniformity of the wafer epitaxial film, the epitaxial growth equipment is also equipped with a temperature measurement device for detecting the temperature of the tray, and a speed measurement device for detecting the rotation speed of the tray. However, the temperature measurement device and the speed measurement device will The structure of the epitaxial growth equipment is too complex.

本申請公開一種半導體製程設備及製程腔室和托盤的檢測方法,能夠同時檢測托盤的溫度和轉速,且簡化了設備的結構佈局。This application discloses a method for detecting semiconductor processing equipment, a process chamber, and a tray, which can simultaneously detect the temperature and rotation speed of the tray and simplify the structural layout of the equipment.

為了解決上述問題,本申請採用下述技術方案:In order to solve the above problems, this application adopts the following technical solutions:

第一方面,本申請提供一種半導體製程設備的製程腔室,包括製程腔體、設置在該製程腔體中的托盤、第一加熱體、轉軸組件以及設置在該製程腔體外部的紅外測溫器,其中:該第一加熱體包括第一加熱板;該托盤可轉動地設於該第一加熱板的頂面上;該轉軸組件包括轉軸和溫度標記件,該轉軸穿設於該第一加熱板、且與該第一加熱板轉動配合,該轉軸的第一端與該托盤相連,使該轉軸能夠隨該托盤轉動,該轉軸的第二端延伸並凸出於該第一加熱板的底面;該溫度標記件設置於該轉軸的第二端,且能夠隨該轉軸轉動;該紅外測溫器用於檢測旋轉至預設的溫度檢測位置的該溫度標記件的溫度,以週期性地獲得該溫度標記件的溫度。In a first aspect, the present application provides a process chamber for semiconductor processing equipment, including a process chamber, a tray disposed in the process chamber, a first heating body, a rotating shaft assembly, and an infrared temperature measurement disposed outside the process chamber. device, wherein: the first heating body includes a first heating plate; the tray is rotatably disposed on the top surface of the first heating plate; the rotating shaft assembly includes a rotating shaft and a temperature marker, and the rotating shaft passes through the first heating plate. The heating plate is rotatably matched with the first heating plate. The first end of the rotating shaft is connected to the tray so that the rotating shaft can rotate with the tray. The second end of the rotating shaft extends and protrudes from the first heating plate. The bottom surface; the temperature marker is provided at the second end of the rotating shaft and can rotate with the rotating shaft; the infrared thermometer is used to detect the temperature of the temperature marker rotated to a preset temperature detection position to periodically obtain The temperature marks the temperature of the piece.

第二方面,本申請提供一種半導體製程設備,包括本申請第一方面所述的製程腔室。In a second aspect, the present application provides a semiconductor processing equipment, including the process chamber described in the first aspect of the present application.

第三方面,本申請提供一種托盤的檢測方法,應用本申請第一方面所述的製程腔室,該檢測方法包括:啟動該紅外測溫器,並週期性地接收該紅外測溫器在該溫度標記件旋轉至該預設的溫度檢測位置時,檢測到的該溫度標記件的溫度,作為該托盤的溫度;比較在檢測時間內所獲得的所有該溫度標記件的溫度,並根據所有該溫度標記件的溫度判斷該托盤的溫度的穩定性;根據該托盤的溫度在單位時間內的獲取次數,並根據該獲取次數計算該托盤的轉速。In a third aspect, this application provides a pallet detection method using the process chamber described in the first aspect of this application. The detection method includes: activating the infrared thermometer, and periodically receiving the infrared thermometer's When the temperature marker rotates to the preset temperature detection position, the temperature of the temperature marker is detected as the temperature of the tray; the temperature of all the temperature markers obtained during the detection time is compared, and the temperature of the temperature marker is calculated based on all the temperatures of the temperature marker. The temperature of the temperature marker is used to determine the stability of the temperature of the tray; based on the number of acquisition times of the temperature of the tray in unit time, the rotation speed of the tray is calculated based on the number of acquisition times.

本申請採用的技術方案能夠達到以下有益效果:The technical solution adopted in this application can achieve the following beneficial effects:

在本申請公開的半導體製程設備及其製程腔室中,通過設置轉軸的第一端連接托盤,轉軸的第二端延伸並凸出於第一加熱板的底面,如此可確保托盤通過轉軸轉動配合於第一加熱板。由於溫度標記件設於轉軸的第二端,其可以隨轉軸進行周向轉動。In the semiconductor processing equipment and its processing chamber disclosed in this application, the first end of the rotating shaft is connected to the tray, and the second end of the rotating shaft extends and protrudes from the bottom surface of the first heating plate. This ensures that the tray rotates and fits through the rotating shaft. on the first heating plate. Since the temperature marker is disposed at the second end of the rotating shaft, it can rotate circumferentially with the rotating shaft.

在檢測托盤的溫度時,隨著溫度標記件的轉動,紅外測溫器能夠在預設的溫度檢測位置週期性地檢測到溫度標記件的溫度,以週期性地獲得托盤的溫度,再通過對檢測時間內所獲得所有溫度標記件的溫度,判斷托盤的溫度的穩定性,從而對托盤精確測溫,同時對加熱環境進行檢測。When detecting the temperature of the tray, as the temperature marker rotates, the infrared thermometer can periodically detect the temperature of the temperature marker at the preset temperature detection position to periodically obtain the temperature of the tray, and then through the The temperature of all temperature markers obtained during the detection time is used to determine the temperature stability of the tray, thereby accurately measuring the temperature of the tray and detecting the heating environment at the same time.

與此同時,在檢測托盤的轉速時,可根據托盤的溫度在單位時間內的獲取次數,並基於該獲取次數來計算出托盤的轉速。At the same time, when detecting the rotation speed of the tray, the rotation speed of the tray can be calculated based on the number of times the temperature of the tray is obtained per unit time.

相較於相關技術,本申請的紅外測溫器不僅可用於檢測托盤的溫度,還能夠作為托盤轉速的檢測裝置,這樣就不再需要額外設置測速裝置,從而有效簡化了設備的結構佈局。Compared with related technologies, the infrared thermometer of the present application can not only be used to detect the temperature of the tray, but can also be used as a detection device for the rotation speed of the tray. This eliminates the need to set up an additional speed measuring device, thus effectively simplifying the structural layout of the equipment.

以下揭露提供用於實施本揭露之不同構件之許多不同實施例或實例。下文描述組件及配置之特定實例以簡化本揭露。當然,此等僅為實例且非意欲限制。舉例而言,在以下描述中之一第一構件形成於一第二構件上方或上可包含其中該第一構件及該第二構件經形成為直接接觸之實施例,且亦可包含其中額外構件可形成在該第一構件與該第二構件之間,使得該第一構件及該第二構件可不直接接觸之實施例。另外,本揭露可在各個實例中重複參考數字及/或字母。此重複出於簡化及清楚之目的且本身不指示所論述之各個實施例及/或組態之間的關係。The following disclosure provides many different embodiments or examples of different means for implementing the disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, the following description in which a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members Embodiments may be formed between the first member and the second member such that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numbers and/or letters in various instances. This repetition is for simplicity and clarity and does not inherently indicate a relationship between the various embodiments and/or configurations discussed.

此外,為便於描述,諸如「下面」、「下方」、「下」、「上方」、「上」及類似者之空間相對術語可在本文中用於描述一個元件或構件與另一(些)元件或構件之關係,如圖中圖解說明。空間相對術語意欲涵蓋除在圖中描繪之定向以外之使用或操作中之裝置之不同定向。設備可以其他方式定向(旋轉90度或按其他定向)且因此可同樣解釋本文中使用之空間相對描述詞。In addition, for ease of description, spatially relative terms such as “below,” “below,” “lower,” “above,” “upper,” and the like may be used herein to describe one element or component in relation to another(s). The relationship between components or components, as illustrated in the figure. Spatially relative terms are intended to cover different orientations of the device in use or operation other than the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

儘管陳述本揭露之寬泛範疇之數值範圍及參數係近似值,然儘可能精確地報告特定實例中陳述之數值。然而,任何數值固有地含有必然由於見於各自測試量測中之標準偏差所致之某些誤差。再者,如本文中使用,術語「大約」通常意謂在一給定值或範圍之10%、5%、1%或0.5%內。替代地,術語「大約」意謂在由此項技術之一般技術者考量時處於平均值之一可接受標準誤差內。除在操作/工作實例中以外,或除非以其他方式明確指定,否則諸如針對本文中揭露之材料之數量、時間之持續時間、溫度、操作條件、數量之比率及其類似者之全部數值範圍、數量、值及百分比應被理解為在全部例項中由術語「大約」修飾。相應地,除非相反地指示,否則本揭露及隨附發明申請專利範圍中陳述之數值參數係可根據需要變化之近似值。至少,應至少鑑於所報告有效數位之數目且藉由應用普通捨入技術解釋各數值參數。範圍可在本文中表達為從一個端點至另一端點或在兩個端點之間。本文中揭露之全部範圍包含端點,除非另有指定。Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the values stated in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Furthermore, as used herein, the term "about" generally means within 10%, 5%, 1% or 0.5% of a given value or range. Alternatively, the term "approximately" means within one acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless otherwise expressly specified, all numerical ranges such as quantities, durations of time, temperatures, operating conditions, ratios of quantities, and the like for materials disclosed herein, Quantities, values and percentages should be understood to be modified in all instances by the term "approximately". Accordingly, unless indicated to the contrary, the numerical parameters set forth in the patent claims of this disclosure and accompanying invention claims are approximations that may vary as necessary. At a minimum, each numerical parameter should be interpreted in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges may be expressed herein as from one endpoint to the other endpoint or between two endpoints. All ranges disclosed herein include endpoints unless otherwise specified.

以下結合附圖,詳細說明本申請各個實施例公開的技術方案。The technical solutions disclosed in various embodiments of the present application will be described in detail below with reference to the accompanying drawings.

為了解決相關技術的外延生長設備中,分別配置測溫裝置和測速裝置而導致的結構複雜化的技術問題,本申請實施例提供一種半導體製程設備的製程腔室。In order to solve the technical problem of structural complexity caused by separately configuring a temperature measuring device and a speed measuring device in epitaxial growth equipment in the related art, embodiments of the present application provide a process chamber of a semiconductor processing equipment.

請參見圖1~圖11,本申請實施例公開的製程腔室包括製程腔體100、托盤200、第一加熱體、轉軸組件400和紅外測溫器500,其中:Referring to Figures 1 to 11, the process chamber disclosed in the embodiment of the present application includes a process chamber 100, a tray 200, a first heating body, a rotating shaft assembly 400 and an infrared thermometer 500, wherein:

製程腔體100是製程腔室的基礎構件,其可以提供安裝基礎。具體地,托盤200、第一加熱體和轉軸組件400設於製程腔體100中。製程腔體100內形成有製程空間S,製程空間S為待處理晶圓提供製程處理環境。同時,為了維持製程腔體100內部的高溫製程環境,製程腔室還可包括設於製程腔體100外部的保溫氈,在保溫氈外環繞設置有感應線圈,感應線圈對第一加熱體感應加熱,進而第一加熱體為托盤200和製程腔體100內部提供高溫的製程環境。The process chamber 100 is the basic component of the process chamber and can provide an installation foundation. Specifically, the tray 200 , the first heating body and the rotating shaft assembly 400 are disposed in the process chamber 100 . A process space S is formed in the process chamber 100, and the process space S provides a process processing environment for the wafers to be processed. At the same time, in order to maintain the high-temperature process environment inside the process chamber 100, the process chamber may also include a thermal insulation felt outside the process chamber 100. An induction coil is arranged around the insulation felt, and the induction coil inductively heats the first heating body. , and then the first heating body provides a high-temperature process environment for the inside of the tray 200 and the process chamber 100 .

托盤200用於放置待處理的晶圓,也即在製程處理的過程中,托盤200承載晶圓。在進行製程處理時,晶圓需要處於高溫狀態,例如在矽外延生長製程中,製程環境的溫度可達1500~1800℃。為了確保實現穩定的高溫製程環境,由加熱體對製程空間S進行加熱升溫。The tray 200 is used to place wafers to be processed, that is, the tray 200 carries the wafers during the process. During process processing, the wafer needs to be in a high-temperature state. For example, in the silicon epitaxial growth process, the temperature of the process environment can reach 1500~1800°C. In order to ensure a stable high-temperature process environment, the process space S is heated by a heating body.

在本申請實施例中,托盤200可轉動地設於第一加熱板300的頂面上,也即二者可實現相對轉動。In the embodiment of the present application, the tray 200 is rotatably disposed on the top surface of the first heating plate 300, that is, the two can realize relative rotation.

轉軸組件400包括轉軸410和溫度標記件420,轉軸410穿設於第一加熱板300、且與第一加熱板300轉動配合,轉軸410的第一端與托盤200相連,使轉軸410能夠隨托盤200轉動,轉軸410的第二端延伸並凸出於第一加熱板300的底面。The rotating shaft assembly 400 includes a rotating shaft 410 and a temperature marker 420. The rotating shaft 410 is passed through the first heating plate 300 and rotates with the first heating plate 300. The first end of the rotating shaft 410 is connected to the tray 200, so that the rotating shaft 410 can follow the tray. 200 rotates, the second end of the rotating shaft 410 extends and protrudes from the bottom surface of the first heating plate 300 .

具體而言,第一加熱板300可為托盤200提供承載作用,而托盤200與轉軸410能夠實現同步運動,托盤200可通過轉軸410與第一加熱板300實現相對轉動。由於轉軸410穿設於第一加熱板300,轉軸410與第一加熱板300存在相互的限位關係,由此也優化了托盤200與第一加熱板300之間的安裝可靠性。進一步地,第一加熱板300的頂面可設有容置槽370,容置槽370用於放置托盤200,其可進一步地優化托盤200的安裝可靠性;容置槽370優選為圓形槽。Specifically, the first heating plate 300 can provide a bearing function for the tray 200 , and the tray 200 and the rotating shaft 410 can achieve synchronous movement. The tray 200 can achieve relative rotation with the first heating plate 300 through the rotating shaft 410 . Since the rotating shaft 410 penetrates the first heating plate 300, the rotating shaft 410 and the first heating plate 300 have a mutual limiting relationship, thereby optimizing the installation reliability between the tray 200 and the first heating plate 300. Furthermore, the top surface of the first heating plate 300 may be provided with an accommodating groove 370. The accommodating groove 370 is used to place the tray 200, which can further optimize the installation reliability of the tray 200; the accommodating groove 370 is preferably a circular groove. .

同時,由於轉軸410的第二端延伸並凸出於第一加熱板300的底面,此處的“凸出”是指轉軸410的第二端延伸至第一加熱板300的底面之外,而第一加熱板300的底面背離製程空間S,也就是說,轉軸410的第二端延伸至製程空間S之外,但其仍位於製程腔體100之內,具體可參見圖1~圖3。At the same time, since the second end of the rotating shaft 410 extends and protrudes from the bottom surface of the first heating plate 300, "protruding" here means that the second end of the rotating shaft 410 extends beyond the bottom surface of the first heating plate 300, and The bottom surface of the first heating plate 300 is away from the process space S. That is to say, the second end of the rotating shaft 410 extends outside the process space S, but is still located within the process chamber 100. See Figures 1 to 3 for details.

在本申請實施例中,溫度標記件420設置於轉軸410的第二端,且能夠隨轉軸410轉動;紅外測溫器500用於檢測溫度標記件420的溫度,溫度標記件420用於旋轉至預設的溫度檢測位置時被紅外測溫器500檢測,以週期性地獲得溫度標記件420的溫度。In the embodiment of the present application, the temperature marker 420 is disposed at the second end of the rotating shaft 410 and can rotate with the rotating shaft 410; the infrared thermometer 500 is used to detect the temperature of the temperature marker 420, and the temperature marker 420 is used to rotate to The preset temperature detection position is detected by the infrared thermometer 500 to periodically obtain the temperature of the temperature marker 420 .

應理解的是,紅外測溫器500設於製程腔體的外部,如此可避免其設於腔內而因為高溫受損。紅外測溫器500例如可透過製程腔體100上設置的檢測窗檢測旋轉至預設的溫度檢測位置的溫度標記件420的溫度。在測量托盤200溫度時,由於轉軸410與托盤200存在導熱關係,可直接通過紅外測溫器500探測到轉軸410的第二端輻射的紅外能量,即可間接檢測到托盤200的溫度,相較於相關技術中通過探測加熱體的溫度來間接獲取托盤的溫度的方案,明顯有效提升了對托盤200溫度的檢測精確度。在本申請實施例中,由於溫度標記件420設於轉軸410的第二端,紅外測溫器500通過檢測製程空間S外的溫度標記件420的溫度即可實現對製程空間S內的托盤200的溫度檢測,同時也可以對第一加熱體進行環境溫度檢測。It should be understood that the infrared thermometer 500 is disposed outside the process chamber, which can prevent it from being damaged due to high temperature when it is disposed inside the chamber. For example, the infrared thermometer 500 can detect the temperature of the temperature marker 420 rotated to a preset temperature detection position through a detection window provided on the process chamber 100 . When measuring the temperature of the tray 200, due to the thermal conduction relationship between the rotating shaft 410 and the tray 200, the infrared energy radiated by the second end of the rotating shaft 410 can be directly detected through the infrared thermometer 500, and the temperature of the tray 200 can be indirectly detected. Compared with In the related art, the solution of indirectly obtaining the temperature of the tray by detecting the temperature of the heating body has obviously effectively improved the detection accuracy of the temperature of the tray 200 . In the embodiment of the present application, since the temperature marker 420 is provided at the second end of the rotating shaft 410, the infrared thermometer 500 can detect the temperature of the pallet 200 in the process space S by detecting the temperature of the temperature marker 420 outside the process space S. temperature detection, and at the same time, the ambient temperature of the first heating body can also be detected.

溫度標記件420隨著轉軸410和托盤200的轉動而實現周向轉動,這樣,溫度標記件420可以週期性地轉動至與紅外測溫器500對應的位置,即預設的溫度檢測位置,使紅外測溫器500可週期性地檢測溫度標記件420的溫度,從而週期性地獲得托盤的溫度,再通過對檢測時間內所獲得所有溫度標記件420的溫度,判斷托盤200的溫度的穩定性,從而對托盤200精確測溫。The temperature marker 420 realizes circumferential rotation as the rotating shaft 410 and the tray 200 rotate. In this way, the temperature marker 420 can periodically rotate to a position corresponding to the infrared thermometer 500, that is, a preset temperature detection position, so that The infrared thermometer 500 can periodically detect the temperature of the temperature markers 420 to periodically obtain the temperature of the tray, and then determine the temperature stability of the tray 200 by comparing the temperatures of all temperature markers 420 obtained within the detection time. , thereby accurately measuring the temperature of the tray 200.

與此同時,在檢測托盤200的轉速時,可根據托盤200的溫度在單位時間內的獲取次數,並基於該獲取次數來計算出托盤200的轉速。At the same time, when detecting the rotation speed of the tray 200, the rotation speed of the tray 200 can be calculated based on the number of acquisition times of the temperature of the tray 200 in unit time.

具體而言,在托盤200轉動的情況下,溫度標記件420在轉動過程中通過預設的溫度檢測位置,通過一次便可記錄一次獲取次數。需要說明的是,紅外測溫器500對溫度標記件420的溫度的獲取次數可通過其檢測的溫度數據來表徵,具體地,如圖6所示,在紅外測溫器500檢測的溫度與時間的關係圖中,紅外測溫器500所檢測的溫度的突變可以為由波峰溫度突變為波谷溫度的突變,也可以為由波谷溫度突變為波峰溫度的突變,其中,記錄檢測時間內波峰溫度的次數即為上述獲取次數。Specifically, when the tray 200 rotates, the temperature marker 420 passes through the preset temperature detection position during the rotation, and the acquisition times can be recorded once. It should be noted that the number of times the infrared thermometer 500 obtains the temperature of the temperature marker 420 can be characterized by the temperature data it detects. Specifically, as shown in FIG. 6 , the temperature and time detected by the infrared thermometer 500 In the relationship diagram, the sudden change in the temperature detected by the infrared thermometer 500 can be a sudden change from the peak temperature to the trough temperature, or a sudden change from the trough temperature to the peak temperature, where the peak temperature within the detection time is recorded. The number of times is the number of acquisitions mentioned above.

在此種結構佈局下,轉軸410的第二端的周向區域被溫度標記件420所均分,當溫度標記件420為一個單體結構時,轉軸410的第二端的周向區域即為360°的整體區域。如此,只要能夠檢測到在單位時間內的溫度標記件420的溫度的獲取次數,即可得出其轉動了多少個均分區域,而這些均分區域之和即能夠表徵轉軸410的轉速,從而表徵托盤200的轉速。In this structural layout, the circumferential area of the second end of the rotating shaft 410 is evenly divided by the temperature marker 420. When the temperature marker 420 is a single structure, the circumferential area of the second end of the rotating shaft 410 is 360°. the overall area. In this way, as long as the number of acquisition times of the temperature of the temperature marker 420 within a unit time can be detected, it can be obtained how many equally divided areas it has rotated, and the sum of these equally divided areas can represent the rotational speed of the rotating shaft 410, thus Indicates the rotation speed of the tray 200.

製程腔室還包括控制系統,控制系統包括讀取單元,讀取單元可讀取到紅外測溫器500檢測的溫度在單位時間內的獲取次數,也即在單位時間內檢測到的托盤200的獲取次數,然後再由控制系統基於該獲取次數來計算托盤200的轉速。為了便於進行計算,控制系統可以完整的波峰溫度區間和波谷溫度區間作為一個計算單元。The process chamber also includes a control system. The control system includes a reading unit. The reading unit can read the number of times the temperature detected by the infrared thermometer 500 is obtained in a unit time, that is, the number of times the temperature of the tray 200 is detected in the unit time. The number of times is obtained, and then the control system calculates the rotation speed of the tray 200 based on the number of times of acquisition. In order to facilitate calculation, the control system can use the complete peak temperature interval and trough temperature interval as a calculation unit.

具體地,將獲取次數與溫度標記件420包括的標記結構(例如葉片)的數量的比值乘以2π,就可以得出托盤200在單位時間內的轉動角度,從而得到托盤200的轉速。上述計算過程可參考公式ω=2nπ⁄mT,其中,ω為托盤200的角速度,n為獲取次數,m為溫度標記件420包括的標記結構的數量。Specifically, by multiplying the ratio of the acquisition times to the number of marking structures (such as blades) included in the temperature marker 420 by 2π, the rotation angle of the tray 200 in unit time can be obtained, and thus the rotation speed of the tray 200 can be obtained. The above calculation process may refer to the formula ω=2nπ⁄mT, where ω is the angular velocity of the tray 200, n is the number of acquisitions, and m is the number of marking structures included in the temperature marking piece 420.

相較於相關技術,本申請實施例的紅外測溫器500不僅用於檢測托盤200的溫度,還能夠作為托盤200轉速的檢測裝置,這樣就不再需要額外設置測速裝置,從而有效簡化了設備的結構佈局。在本申請實施例中,未限制溫度標記件420的具體類型,例如,溫度標記件420可以包括設於轉軸410的第二端周向側壁的凸塊等。Compared with related technologies, the infrared thermometer 500 in the embodiment of the present application is not only used to detect the temperature of the tray 200, but can also be used as a detection device for the rotation speed of the tray 200. This eliminates the need to set up an additional speed measuring device, thereby effectively simplifying the equipment. structural layout. In the embodiment of the present application, the specific type of the temperature marker 420 is not limited. For example, the temperature marker 420 may include a bump provided on the circumferential side wall of the second end of the rotating shaft 410 , etc.

在另外的實施方式中,如圖1~圖5所示,溫度標記件420可以包括多個葉片421,多個葉片421沿轉軸200的周向均勻排布。In other embodiments, as shown in FIGS. 1 to 5 , the temperature marker 420 may include a plurality of blades 421 , and the plurality of blades 421 are evenly arranged along the circumferential direction of the rotating shaft 200 .

在此種結構佈局下,紅外測溫器500的檢測路徑與轉軸410錯位設置,在預設的溫度檢測位置,也即在紅外測溫器500的檢測路徑上,葉片421會依次轉動至該位置並被紅外測溫器500檢測到溫度,此時為波峰溫度,具體可參見圖5;在葉片421與紅外測溫器500的檢測路徑錯開時,紅外測溫器500檢測到的是波谷溫度,具體可參見圖4。In this structural layout, the detection path of the infrared thermometer 500 is misaligned with the rotating shaft 410. At the preset temperature detection position, that is, on the detection path of the infrared thermometer 500, the blades 421 will rotate to this position in sequence. And the temperature is detected by the infrared thermometer 500, which is the peak temperature at this time, see Figure 5 for details; when the detection paths of the blade 421 and the infrared thermometer 500 are staggered, the infrared thermometer 500 detects the trough temperature, See Figure 4 for details.

如圖2和圖11所示,溫度標記件420包括設於轉軸410的第二端的葉輪422,葉輪422套設於轉軸410,葉片421連接於葉輪422且沿周向分佈,轉軸410的第二端可設有緊固件401,以通過緊固件401對葉輪422進行限位。As shown in Figures 2 and 11, the temperature marker 420 includes an impeller 422 located at the second end of the rotating shaft 410. The impeller 422 is sleeved on the rotating shaft 410. The blades 421 are connected to the impeller 422 and distributed along the circumferential direction. The second end of the rotating shaft 410 A fastener 401 may be provided at the end to limit the position of the impeller 422 through the fastener 401.

在可選的方案中,如圖8~圖10,第一加熱板300內設有氣體流道,氣體流道包括出氣流道350,出氣流道350用於輸送驅動氣體,第一加熱板300包括設於其頂面的出氣口302,出氣口302與出氣流道350連通,且與托盤200對應設置;托盤200包括設於其底面的驅動部210,經由出氣口302輸出的驅動氣體可通過推動驅動部210而帶動托盤200轉動。In an optional solution, as shown in Figures 8 to 10, the first heating plate 300 is provided with a gas flow channel. The gas flow channel includes an air outlet channel 350. The air outlet channel 350 is used to transport driving gas. The first heating plate 300 It includes an air outlet 302 provided on its top surface. The air outlet 302 is connected with the air outlet channel 350 and is arranged corresponding to the tray 200. The tray 200 includes a driving part 210 provided on its bottom surface. The driving gas output through the air outlet 302 can pass through The driving part 210 is pushed to drive the tray 200 to rotate.

在此種結構佈局下,輸入氣體流道內的驅動氣體可由出氣流道350和出氣口302輸出,驅動氣體可對托盤200底面施加驅動作用;基於驅動部210的存在,驅動氣體可通過驅動驅動部210而帶動托盤200轉動。可見,本申請實施例的托盤200採用氣體驅動的方案,從而能夠避免常規的通過電機驅動托盤200的方案而存在的難以承受高溫的缺點。此外,在托盤200與第一加熱板300之間的結構佈局中,驅動氣體對托盤200的驅動作用存在垂直分量,該垂直分量可驅動托盤200上浮一段距離,如此就使托盤200與第一加熱板300分離,從而有利於托盤200實現轉動。驅動氣體對托盤200的驅動作用存在水平分量,該水平分量即可驅動托盤200轉動。Under this structural layout, the driving gas in the input gas flow channel can be output from the air outlet flow channel 350 and the air outlet 302, and the driving gas can exert a driving effect on the bottom surface of the tray 200; based on the existence of the driving part 210, the driving gas can be driven by The portion 210 drives the tray 200 to rotate. It can be seen that the tray 200 in the embodiment of the present application adopts a gas-driven solution, which can avoid the shortcoming of the conventional solution of motor-driven tray 200 being difficult to withstand high temperatures. In addition, in the structural layout between the tray 200 and the first heating plate 300, the driving effect of the driving gas on the tray 200 has a vertical component. This vertical component can drive the tray 200 to float up a certain distance, so that the tray 200 is connected to the first heating plate 300. The plates 300 are separated, thereby facilitating the rotation of the tray 200 . The driving effect of the driving gas on the tray 200 has a horizontal component, and this horizontal component can drive the tray 200 to rotate.

本申請實施例未限制驅動部210的具體構型,其具體可以為凹槽或凸起。在驅動部210為凹槽時,驅動氣體通過推動槽壁而施加驅動作用;在驅動部210為凸起時,驅動氣體通過推動凸起的側壁而施加驅動作用。The embodiment of the present application does not limit the specific configuration of the driving part 210, which may be a groove or a protrusion. When the driving part 210 is a groove, the driving gas exerts a driving effect by pushing the groove wall; when the driving part 210 is a protrusion, the driving gas exerts a driving effect by pushing the side walls of the protrusion.

在可選的方案中,如圖10所示,驅動部210為條形槽,條形槽有較長的延展長度,如此可增大驅動氣體對條形槽的槽壁的作用面積,從而提升驅動效率。為了進一步地優化驅動氣體對條形槽的驅動效果,可配置驅動部210為多個,由此可進一步地增大驅動氣體的作用面積;可配置條形槽均圍繞轉軸410傾斜設置,由此可增大驅動氣體沿托盤200的周向施加的驅動作用;可進一步配置多個條形槽的傾斜方向相同,如此可避免條形槽因為反向佈置而出現干涉,且更利於驅動氣體施加同向的驅動作用。In an optional solution, as shown in Figure 10, the driving part 210 is a strip groove, and the strip groove has a longer extension length, which can increase the area of action of the driving gas on the groove wall of the strip groove, thereby improving the Drive efficiency. In order to further optimize the driving effect of the driving gas on the strip grooves, multiple driving parts 210 can be configured, thereby further increasing the action area of the driving gas; the strip grooves can be configured to be inclined around the rotation axis 410, so that The driving effect exerted by the driving gas along the circumferential direction of the tray 200 can be increased; the inclination directions of the plurality of strip grooves can be further configured to be in the same direction. This can avoid interference due to reverse arrangement of the strip grooves, and is more conducive to simultaneous application of the driving gas. directional driving effect.

更進一步地,多個條形槽圍繞托盤200的中心呈中心對稱佈局。Furthermore, the plurality of strip grooves are centrally symmetrically arranged around the center of the tray 200 .

在驅動部210為凹槽的情況下,驅動部210還可選為螺旋槽。在驅動部210為凸起的情況下,驅動部210也可選為凸條、螺旋凸起等。When the driving part 210 is a groove, the driving part 210 may also be a spiral groove. When the driving part 210 is a protrusion, the driving part 210 may also be a protrusion, a spiral protrusion, or the like.

在可選的方案中,如圖8所示,第一加熱板300包括至少三個出氣口302,至少三個出氣口302沿托盤200的中軸線的周向均勻分佈。如此佈局下,基於三點成面的原理,至少三個出氣口302輸出的驅動氣體可在托盤200的底面形成至少三個作用區域,相較於一個和兩個作用區域的方案,顯然可有效提升對托盤200的驅動穩定性和可靠性。In an optional solution, as shown in FIG. 8 , the first heating plate 300 includes at least three air outlets 302 , and the at least three air outlets 302 are evenly distributed along the circumferential direction of the central axis of the tray 200 . Under such a layout, based on the principle of three points forming a plane, the driving gas output from at least three air outlets 302 can form at least three action areas on the bottom surface of the tray 200. Compared with the one and two action area solutions, it is obviously more effective. The driving stability and reliability of the tray 200 are improved.

關於出氣口302的數量,本申請實施例未對其做出具體限制,除了圖8示出的3個,其還可以為一個、兩個、四個、五個等。The number of air outlets 302 is not specifically limited in the embodiment of the present application. In addition to the three shown in FIG. 8 , it can also be one, two, four, five, etc.

在可選的方案中,如圖7~圖9所示,氣體流道還包括進氣流道,進氣流道的一端用於與外部氣源連通,進氣流道的另一端與出氣流道連通,以向出氣流道內輸送驅動氣體,進氣流道在水平面上排布,出氣流道350相對於豎直方向傾斜設置。在此種結構佈局下,出氣流道350通過相對於豎直方向傾斜設置的佈局,可將於水平面、在進氣流道內輸送的驅動氣體向上輸送而由出氣口302輸出,並且出氣方向與托盤200成預設夾角設置,從而驅動托盤200轉動。當然,本申請實施例未限制出氣流道350與進氣流道的具體配合關係,出氣流道350還可以為弧形流道,其也可以將水平面內輸送的驅動氣體向上由出氣口302輸出,並且出氣方向與托盤200成預設夾角設置。In the optional solution, as shown in Figures 7 to 9, the gas flow channel also includes an inlet flow channel. One end of the inlet flow channel is used to communicate with the external air source, and the other end of the inlet flow channel is connected to the outlet air flow. The air flow channels are connected to transport the driving gas into the air outlet flow channel, the inlet air flow channel is arranged on the horizontal plane, and the air outlet flow channel 350 is arranged inclined relative to the vertical direction. In this structural layout, the air outlet flow channel 350 is tilted relative to the vertical direction, so that the driving gas transported in the horizontal plane and in the air inlet flow channel can be transported upward and output from the air outlet 302, and the air outlet direction is consistent with that of the air outlet 302. The tray 200 is set at a preset angle, thereby driving the tray 200 to rotate. Of course, the embodiment of the present application does not limit the specific cooperation relationship between the air outlet flow channel 350 and the air inlet flow channel. The air outlet flow channel 350 can also be an arc-shaped flow channel, which can also output the driving gas transported in the horizontal plane upward through the air outlet 302 , and the air outlet direction is set at a preset angle with the tray 200 .

在此種結構佈局下,由於出氣流道350為直線形流道,則出氣流道350的軸線與出氣口302的軸線共線;直線形流道便於直接加工成型,從而便於設置出氣流道的軸線相對於托盤200的中軸線的傾斜角度,以與托盤200底面的驅動部210配合,優化驅動氣體的驅動效果。In this structural layout, since the air outlet channel 350 is a linear channel, the axis of the air outlet channel 350 is collinear with the axis of the air outlet 302; the linear channel is easy to be directly processed and formed, thereby facilitating the installation of the air outlet channel. The inclination angle of the axis relative to the central axis of the tray 200 is used to cooperate with the driving part 210 on the bottom surface of the tray 200 to optimize the driving effect of the driving gas.

其中,出氣流道350的軸線與托盤200的中軸線的夾角的大小為a,該夾角為鈍角,且該夾角直接影響出氣流道350的傾斜度。具體地,該夾角可以為120°、130°、140°等。The angle between the axis of the air outlet channel 350 and the central axis of the tray 200 is a. The angle is an obtuse angle, and the angle directly affects the inclination of the air outlet channel 350 . Specifically, the included angle may be 120°, 130°, 140°, etc.

進一步地,進氣流道包括輸入子流道、分配子流道和多個輸送子流道,輸入子流道的第一端用於與外部氣源連通,輸入子流道的第二端與分配子流道的進氣端連通,分配子流道具有多個出氣端;多個輸送子流道的進氣端一一對應地與分配子流道的多個進氣端連通;第一加熱板的頂面上開設有至少三個出氣口302,出氣流道350包括至少三個出氣子流道,各個出氣子流道一一對應地與各個出氣口302連通;每個輸送子流道的出氣端與其中一個出氣子流道連通。在此種結構佈局下,外部氣源可向輸入子流道內輸送驅動氣體,驅動氣體可經由分配子流道均分驅動氣體,然後,驅動氣體分別輸送至多個輸送子流道,再經由每個輸送子流道輸送至與之連通的出氣子流道,最後經由與該出氣子流道連通的出氣口302輸出。此種結構佈局可避免由不同出氣口302輸出不同分量的驅動氣體,以優化驅動氣體對托盤200施加驅動作用的均勻性。Further, the air inlet flow passage includes an input sub-flow passage, a distribution sub-flow passage and a plurality of transport sub-flow passages. The first end of the input sub-flow passage is used to communicate with the external air source, and the second end of the input sub-flow passage is connected to the external air source. The air inlet ends of the distribution sub-flow channels are connected, and the distribution sub-flow channels have multiple air outlet ends; the air inlet ends of the multiple transport sub-flow channels are connected to the multiple air inlet ends of the distribution sub-flow channels in one-to-one correspondence; the first heating At least three air outlets 302 are provided on the top surface of the plate, and the air outlet channels 350 include at least three air outlet sub-channels. Each air outlet sub-channel is connected to each air outlet 302 in a one-to-one correspondence; each transport sub-channel has The air outlet end is connected with one of the air outlet sub-flow channels. In this structural layout, the external air source can deliver driving gas into the input sub-flow channel, and the driving gas can be evenly distributed through the distribution sub-flow channel. Then, the driving gas can be separately transported to multiple delivery sub-flow channels, and then through each sub-flow channel. Each transport sub-flow channel is transported to the gas outlet sub-channel connected thereto, and finally output through the gas outlet 302 connected to the gas outlet sub-channel. This structural layout can avoid outputting different components of driving gas from different air outlets 302 to optimize the uniformity of the driving effect exerted by the driving gas on the tray 200 .

在一個優選的實施例中,如圖7~圖9所示,進氣流道包括輸入子流道310、分配子流道320、第一輸送子流道330和第二輸送子流道340,輸入子流道310沿第一水平方向(即,圖7的豎直方向)延伸設置,分配子流道320的延伸方向與該第一水平方向相互垂直(即,垂直於圖7的豎直方向),輸入子流道310的第一端與通過進氣口301與外部氣源連通,輸入子流道310的第二端與分配子流道320連通,例如輸入子流道310的第二端與位於分配子流道320的中部的進氣端連通,以使進入分配子流道320的驅動氣體在分流後到達分配子流道320的兩個出氣端的距離相同。輸送子流道為兩個,分別為第一輸送子流道330和第二輸送子流道340,二者分別與分配子流道320的兩個出氣端連通,且第一輸送子流道330和第二輸送子流道340相對於輸入子流道310對稱佈置;分配子流道320、第一輸送子流道330和第二輸送子流道340的一端均在第一加熱板300的外表面設有貫通口303,且在貫通口303均設有密封件304;出氣口302為三個,且沿托盤200的中軸線的周向均勻分佈。出氣子流道為三個,分別為第一出氣子流道305、第二出氣子流道306和第三出氣子流道307,第一出氣子流道305與輸入子流道310連通,第二出氣子流道306與第一輸送子流道330連通,第三出氣子流道307與第二輸送子流道340連通,且第一出氣子流道305、第二出氣子流道306和第三出氣子流道307分別與三個出氣口302一一對應連通。In a preferred embodiment, as shown in Figures 7 to 9, the air inlet flow channel includes an input sub-flow channel 310, a distribution sub-flow channel 320, a first transportation sub-flow channel 330 and a second transportation sub-flow channel 340. The input sub-flow channel 310 extends along a first horizontal direction (ie, the vertical direction of FIG. 7 ), and the extension direction of the distribution sub-flow channel 320 is perpendicular to the first horizontal direction (ie, perpendicular to the vertical direction of FIG. 7 ), the first end of the input sub-flow channel 310 is connected to the external air source through the air inlet 301, and the second end of the input sub-flow channel 310 is connected to the distribution sub-flow channel 320, for example, the second end of the input sub-flow channel 310 It is connected with the air inlet end located in the middle of the distribution sub-flow channel 320, so that the driving gas entering the distribution sub-flow channel 320 reaches the two outlet ends of the distribution sub-flow channel 320 at the same distance after being divided. There are two conveying sub-flow channels, namely the first conveying sub-flow channel 330 and the second conveying sub-flow channel 340, which are respectively connected with the two outlet ends of the distribution sub-flow channel 320, and the first conveying sub-flow channel 330 and the second conveying sub-flow channel 340 are arranged symmetrically with respect to the input sub-flow channel 310; one end of the distribution sub-flow channel 320, the first conveying sub-flow channel 330 and the second conveying sub-flow channel 340 is outside the first heating plate 300 There are through-holes 303 on the surface, and seals 304 are provided on the through-holes 303; there are three air outlets 302, and they are evenly distributed along the circumferential direction of the central axis of the tray 200. There are three gas outlet sub-channels, namely the first gas outlet sub-channel 305, the second gas outlet sub-channel 306 and the third gas outlet sub-channel 307. The first gas outlet sub-channel 305 is connected with the input sub-channel 310. The second gas outlet sub-flow channel 306 is connected with the first transport sub-channel 330, the third gas outlet sub-channel 307 is connected with the second transport sub-channel 340, and the first gas outlet sub-channel 305, the second gas outlet sub-channel 306 and The third air outlet sub-flow channel 307 is connected to the three air outlets 302 in one-to-one correspondence.

在此種結構佈局下,外部氣源可向輸入子流道310內輸送驅動氣體,驅動氣體可經由分配子流道320均分驅動氣體,然後,驅動氣體分別輸送至第一輸送子流道330和第二輸送子流道340。在輸入子流道310中,可由第一出氣子流道305和對應的出氣口302輸出驅動氣體,在第一輸送子流道330中,可由第二出氣子流道306和對應的出氣口302輸出驅動氣體,在第二輸送子流道350中,可由第三出氣子流道307和對應的出氣口302輸出驅動氣體。此種結構佈局可避免由不同出氣口302輸出不同分量的驅動氣體,以優化驅動氣體對托盤200施加驅動作用的均勻性。Under this structural layout, the external air source can deliver driving gas into the input sub-flow channel 310 , the driving gas can be evenly distributed through the distribution sub-flow channel 320 , and then the driving gas can be separately delivered to the first transport sub-flow channel 330 and the second conveying sub-flow channel 340. In the input sub-flow channel 310, the driving gas can be output from the first gas outlet sub-channel 305 and the corresponding gas outlet 302. In the first transport sub-channel 330, the driving gas can be output from the second gas outlet sub-channel 306 and the corresponding gas outlet 302. To output the driving gas, in the second transport sub-flow channel 350, the driving gas can be output from the third gas outlet sub-channel 307 and the corresponding gas outlet 302. This structural layout can avoid outputting different components of driving gas from different air outlets 302 to optimize the uniformity of the driving effect exerted by the driving gas on the tray 200 .

基於貫通口303,能夠便捷地加工出分配子流道320、第一輸送子流道330和第二輸送子流道340,而密封件304可確保分配子流道320、第一輸送子流道330和第二輸送子流道340的氣密性。其中,密封件304可選為氣道堵絲、密封橡膠等。Based on the through opening 303, the distribution sub-flow channel 320, the first conveying sub-flow channel 330 and the second conveying sub-flow channel 340 can be easily processed, and the seal 304 can ensure that the distribution sub-flow channel 320, the first conveying sub-flow channel 340 330 and the air tightness of the second conveying sub-flow channel 340. Among them, the sealing member 304 may be airway plugging, sealing rubber, etc.

當然,本申請實施例未限制第一加熱板300內進氣流道的具體成型方案,在另外的實施方式中,第一加熱板300可包括第一子加熱板和第二子加熱板,第一子加熱板的下表面和第二子加熱板的上表面上均開設有相對設置的進氣凹槽,第一子加熱板和第二子加熱板對合使相對設置的進氣凹槽形成完整的輸入子流道310、分配子流道320、第一輸送子流道330和第二輸送子流道340,而在此種結構佈局下,不需要設置前述的貫通口303。Of course, the embodiment of the present application does not limit the specific shaping scheme of the air inlet flow channel in the first heating plate 300. In other embodiments, the first heating plate 300 may include a first sub-heating plate and a second sub-heating plate. The lower surface of the first sub-heating plate and the upper surface of the second sub-heating plate are both provided with relatively arranged air inlet grooves. The first sub-heating plate and the second sub-heating plate are aligned to form oppositely arranged air inlet grooves. The input sub-channel 310, the distribution sub-channel 320, the first transport sub-channel 330 and the second transport sub-channel 340 are complete, and in this structural layout, there is no need to provide the aforementioned through-port 303.

在可選的方案中,至少三個出氣口302的軸線均圍繞轉軸410傾斜設置,且傾斜方向相同。如此設置下,由出氣口302輸出的驅動氣體在入射至托盤200的底面時,會與托盤200的底面存在夾角,由此可確保驅動氣體對托盤200的驅動作用存在垂直分量和水平分量,該垂直分量可驅動托盤200上浮,該水平分量可作用於驅動部210,並驅動托盤200轉動。In an optional solution, the axes of at least three air outlets 302 are all inclined around the rotation axis 410, and the inclination directions are the same. Under such an arrangement, when the driving gas output from the air outlet 302 is incident on the bottom surface of the tray 200, there will be an included angle with the bottom surface of the tray 200, thereby ensuring that the driving effect of the driving gas on the tray 200 has a vertical component and a horizontal component. The vertical component can drive the tray 200 to float up, and the horizontal component can act on the driving part 210 and drive the tray 200 to rotate.

同時,出氣口302的軸線的傾斜方向相同,可確保這些出氣口302的軸線存在同向的傾斜特徵,以便於分屬不同出氣口302輸出的驅動氣體的水平分量對托盤200的驅動作用能夠趨於一致,從而優化驅動效果。At the same time, the inclination direction of the axes of the air outlets 302 is the same, which ensures that the axes of the air outlets 302 have the same inclination feature, so that the horizontal components of the driving gas output by different air outlets 302 can drive the tray 200 in the same direction. In order to optimize the driving effect.

在可選的方案中,如圖2和圖11所示,製程腔室還包括軸套600,第一加熱板300具有貫通其頂面和底面的通孔360,軸套600套設於轉軸410外,且設於轉軸410與通孔360的孔壁之間。如此設置下,軸套600可對轉軸410和通孔360的孔壁進行支撐,以防止轉軸410發生偏斜;轉軸410通常由耐磨材質製成,由此可降低轉軸410的受磨損度。In an optional solution, as shown in Figures 2 and 11, the process chamber also includes a sleeve 600. The first heating plate 300 has a through hole 360 penetrating its top surface and bottom surface. The sleeve 600 is sleeved on the rotating shaft 410. outside, and is located between the rotating shaft 410 and the hole wall of the through hole 360 . With this arrangement, the sleeve 600 can support the rotating shaft 410 and the hole wall of the through hole 360 to prevent the rotating shaft 410 from deflecting; the rotating shaft 410 is usually made of wear-resistant material, thereby reducing the wear of the rotating shaft 410 .

進一步地,如圖11所示,通孔360內設有第一環形臺階槽361,軸套600設於第一環形臺階槽361內。在此種結構佈局下,第一環形臺階槽361為軸套600提供了容置空間,如此可提升結構緊湊性。而且,第一環形臺階槽361的臺階面可對軸套600進行支撐限位。Further, as shown in FIG. 11 , a first annular stepped groove 361 is provided in the through hole 360 , and the sleeve 600 is provided in the first annular stepped groove 361 . Under this structural layout, the first annular step groove 361 provides an accommodation space for the sleeve 600, which can improve the compactness of the structure. Moreover, the step surface of the first annular step groove 361 can support and limit the shaft sleeve 600 .

進一步地,如圖8、圖10和圖11所示,通孔360內還設有第二環形臺階槽362,第一環形臺階槽361與第二環形臺階槽362沿通孔360由上至下依次佈置;托盤200包括設於其底面的環形配合部220,環形配合部220套設於軸套600外,且設置於第二環形臺階槽362內。Further, as shown in FIGS. 8 , 10 and 11 , a second annular step groove 362 is also provided in the through hole 360 . The first annular step groove 361 and the second annular step groove 362 extend along the through hole 360 from top to bottom. The pallet 200 includes an annular fitting portion 220 on its bottom surface. The annular fitting portion 220 is sleeved on the outside of the sleeve 600 and is arranged in the second annular step groove 362 .

在此種結構佈局下,通孔360為多級臺階孔,第二環形臺階槽362為環形配合部220提供了容置空間,且環形配合部220受到軸套600沿徑向向內的限位作用,還受到第二環形臺階槽362的槽側壁沿徑向向外的限位作用,從而優化對托盤200的定位作用。In this structural layout, the through hole 360 is a multi-step stepped hole, the second annular stepped groove 362 provides a receiving space for the annular fitting part 220, and the annular fitting part 220 is limited radially inward by the sleeve 600. It is also limited radially outward by the groove side walls of the second annular stepped groove 362, thereby optimizing the positioning effect of the tray 200.

在可選的方案中,製程腔室還包括第二加熱體700、第一端蓋和第二端蓋;第一加熱體還包括與第一加熱板300連接的第一弧形加熱件,第二加熱體700包括第二加熱板和第二弧形加熱件,第一加熱體與第二加熱體相對設置;第一端蓋蓋設在第一加熱體的第一端和第二加熱體700的第一端,第二端蓋蓋設在第一加熱體的第二端和第二加熱體700的第二端,第一加熱板和第二加熱板相對設置,且二者之間形成製程空間S。In an optional solution, the process chamber further includes a second heating body 700, a first end cover, and a second end cover; the first heating body further includes a first arc-shaped heating element connected to the first heating plate 300. The second heating body 700 includes a second heating plate and a second arc-shaped heating element. The first heating body and the second heating body are arranged oppositely; the first end cap is provided on the first end of the first heating body and the second heating body 700 The first end of the first heating body, the second end cap is provided on the second end of the first heating body and the second end of the second heating body 700, the first heating plate and the second heating plate are arranged oppositely, and a process is formed between them. Space S.

具體地,第一加熱板300和第一弧形加熱件連接,圍成沿軸向貫通的半圓形的第一加熱體,第一加熱板與第一弧形加熱件之間形成第一加熱腔;第二加熱板和第二弧形加熱件連接,圍成沿軸向貫通的半圓形的第二加熱體700,第二加熱板與第二弧形加熱件之間形成第二加熱腔。溫度標記件420設置在第一加熱腔內,紅外測溫器500能夠探測到溫度標記件420在第一加熱腔內產生的紅外輻射能量,以對溫度標記件420的溫度進行檢測,不僅實現了對托盤200的溫度檢測,是也可以對第一加熱體的第一加熱腔內的環境溫度進行檢測。Specifically, the first heating plate 300 and the first arc-shaped heating element are connected to form a semicircular first heating body penetrating in the axial direction. A first heating element is formed between the first heating plate 300 and the first arc-shaped heating element. Cavity; the second heating plate and the second arc-shaped heating element are connected to form a semicircular second heating body 700 that runs through in the axial direction, and a second heating cavity is formed between the second heating plate and the second arc-shaped heating element. . The temperature marker 420 is disposed in the first heating chamber. The infrared thermometer 500 can detect the infrared radiation energy generated by the temperature marker 420 in the first heating chamber to detect the temperature of the temperature marker 420, which not only achieves The temperature of the tray 200 may also be detected by detecting the ambient temperature in the first heating chamber of the first heating body.

在本申請實施例中,製程腔室可以配置第一加熱板300和第二加熱板相對設置,且托盤200位於第一加熱板300與第二加熱板之間的製程空間S中,在第一加熱體和第二加熱體700外面環繞設置有感應線圈,感應線圈對第一加熱體和第二加熱體700感應加熱,由此可提升托盤200所處環境的溫度均勻性,有利於提升晶圓W的外延生長質量。In the embodiment of the present application, the process chamber can be configured with a first heating plate 300 and a second heating plate arranged opposite each other, and the tray 200 is located in the process space S between the first heating plate 300 and the second heating plate. The heating body and the second heating body 700 are surrounded by induction coils. The induction coils inductively heat the first heating body and the second heating body 700, thereby improving the temperature uniformity of the environment where the tray 200 is located, which is beneficial to improving the wafer quality. The epitaxial growth quality of W.

本申請實施例還提供一種半導體製程設備,其包括前述任一方案所提及的製程腔室,這樣就使得該半導體製程設備具備了前述任一方案的有益效果,在此不再贅述。可選地,本申請實施例的半導體製程設備為外延生長設備,當然其還可以為需要檢測托盤的溫度和轉速的半導體熱處理設備。Embodiments of the present application also provide a semiconductor processing equipment, which includes the process chamber mentioned in any of the foregoing solutions, so that the semiconductor processing equipment has the beneficial effects of any of the foregoing solutions, which will not be described again here. Optionally, the semiconductor processing equipment in the embodiment of the present application is an epitaxial growth equipment. Of course, it can also be a semiconductor heat treatment equipment that needs to detect the temperature and rotation speed of the tray.

本申請實施例還提供一種托盤200的檢測方法,其應用於前述任一方案所提及的製程腔室,並用於檢測托盤200的溫度和轉速。檢測方法包括:Embodiments of the present application also provide a detection method for the tray 200 , which is applied to the process chamber mentioned in any of the foregoing solutions and is used to detect the temperature and rotation speed of the tray 200 . Detection methods include:

步驟S100,啟動紅外測溫器500,並週期性地接收紅外測溫器500在溫度標記件420旋轉至預設的溫度檢測位置時,檢測到的溫度標記件420的溫度,作為托盤200的溫度;Step S100, start the infrared thermometer 500, and periodically receive the temperature of the temperature marker 420 detected by the infrared thermometer 500 when the temperature marker 420 rotates to a preset temperature detection position as the temperature of the tray 200 ;

步驟S200,比較在檢測時間內所獲得的所有溫度標記件420的溫度,並根據比較結果判斷托盤200的溫度的穩定性;Step S200: Compare the temperatures of all temperature markers 420 obtained within the detection time, and determine the temperature stability of the tray 200 based on the comparison results;

步驟S300,根據托盤200的溫度在單位時間內的獲取次數,並根據獲取次數計算托盤200的轉速。Step S300: Calculate the rotation speed of the tray 200 based on the number of acquisition times of the temperature of the tray 200 within the unit time.

在本申請實施例中,由於溫度標記件420設於轉軸410的第二端,在轉軸410隨托盤200的轉動過程中,溫度標記件420隨著轉軸410和托盤200的轉動而實現周向轉動,在預設的溫度檢測位置,紅外測溫器500可週期性地檢測溫度標記件420的溫度,從而週期性地獲得托盤200的溫度,再通過對檢測時間內所獲得所有溫度標記件420的溫度,判斷托盤200的溫度的穩定性,從而對托盤200精確測溫。In the embodiment of the present application, since the temperature marker 420 is disposed at the second end of the rotating shaft 410 , during the rotation of the rotating shaft 410 with the tray 200 , the temperature marking 420 realizes circumferential rotation along with the rotation of the rotating shaft 410 and the tray 200 . , at the preset temperature detection position, the infrared thermometer 500 can periodically detect the temperature of the temperature markers 420, thereby periodically obtaining the temperature of the tray 200, and then by measuring all the temperature markers 420 obtained within the detection time. temperature to determine the stability of the temperature of the tray 200, thereby accurately measuring the temperature of the tray 200.

與此同時,在檢測托盤200的轉速時,可根據托盤200的溫度在單位時間內的獲取次數,並基於該獲取次數來計算出托盤200的轉速。At the same time, when detecting the rotation speed of the tray 200, the rotation speed of the tray 200 can be calculated based on the number of acquisition times of the temperature of the tray 200 in unit time.

具體而言,在托盤200轉動的情況下,溫度標記件420在轉動過程中通過預設的溫度檢測位置,通過一次便可記錄一次獲取次數。需要說明的是,紅外測溫器500對溫度標記件420的溫度的獲取次數可通過其檢測的溫度數據來表徵,具體地,如圖6所示,在紅外測溫器500檢測的溫度與時間的關係圖中,紅外測溫器500所檢測的溫度的突變可以為由波峰溫度突變為波谷溫度的突變,也可以為由波谷溫度突變為波峰溫度的突變,其中,記錄檢測時間內波峰溫度的次數即為上述獲取次數。Specifically, when the tray 200 rotates, the temperature marker 420 passes through the preset temperature detection position during the rotation, and the acquisition times can be recorded once. It should be noted that the number of times the infrared thermometer 500 obtains the temperature of the temperature marker 420 can be characterized by the temperature data it detects. Specifically, as shown in FIG. 6 , the temperature and time detected by the infrared thermometer 500 In the relationship diagram, the sudden change in the temperature detected by the infrared thermometer 500 can be a sudden change from the peak temperature to the trough temperature, or a sudden change from the trough temperature to the peak temperature, where the peak temperature within the detection time is recorded. The number of times is the number of acquisitions mentioned above.

將獲取次數與溫度標記件420包括的標記結構(例如葉片)的數量的比值乘以2π,就可以得出托盤200在單位時間內的轉動角度,從而得到托盤200的轉速。上述計算過程可參考公式ω=2nπ⁄mT,其中,ω為托盤200的角速度,n為獲取次數,m為溫度標記件420包括的標記結構(例如葉片)的數量。By multiplying the ratio of the acquisition times to the number of marking structures (such as blades) included in the temperature marker 420 by 2π, the rotation angle of the tray 200 in unit time can be obtained, and thus the rotation speed of the tray 200 can be obtained. The above calculation process may refer to the formula ω=2nπ⁄mT, where ω is the angular velocity of the tray 200, n is the number of acquisitions, and m is the number of marking structures (eg, blades) included in the temperature marking piece 420.

相較於相關技術,本申請實施例的紅外測溫器500不僅用於檢測托盤200的溫度,還能夠作為托盤200轉速的檢測裝置,這樣就不再需要額外設置測速裝置,從而有效簡化了設備的結構佈局。Compared with related technologies, the infrared thermometer 500 in the embodiment of the present application is not only used to detect the temperature of the tray 200, but can also be used as a detection device for the rotation speed of the tray 200. This eliminates the need to set up an additional speed measuring device, thereby effectively simplifying the equipment. structural layout.

前述內容概括數項實施例之特徵,使得熟習此項技術者可更佳地理解本揭露之態樣。熟習此項技術者應瞭解,其等可容易地使用本揭露作為用於設計或修改用於實行本文中介紹之實施例之相同目的及/或達成相同優點之其他製程及結構之一基礎。熟習此項技術者亦應瞭解,此等等效構造不背離本揭露之精神及範疇,且其等可在不背離本揭露之精神及範疇之情況下在本文中作出各種改變、置換及更改。The foregoing content summarizes the features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of the disclosure, and that they can be variously changed, replaced, and altered herein without departing from the spirit and scope of the disclosure.

100:製程腔體 200:托盤 210:驅動部 220:環形配合部 300:第一加熱板 301:進氣口 302:出氣口 303:貫通口 304:密封件 305:第一出氣子流道 306:第二出氣子流道 307:第三出氣子流道 310:輸入子流道 320:分配子流道 330:第一輸送子流道 340:第二輸送子流道 350:出氣流道 360:通孔 361:第一環形臺階槽 362:第二環形臺階槽 370:容置槽 400:轉軸組件 401:緊固件 410:轉軸 420:溫度標記件 421:葉片 422:葉輪 500:紅外測溫器 600:軸套 700:第二加熱體 S:製程空間 100: Process chamber 200:pallet 210:Drive Department 220: Ring fitting part 300: First heating plate 301:Air inlet 302: Air outlet 303: Through port 304:Seals 305: The first outlet channel 306: The second outlet channel 307: The third outlet channel 310:Input sub-channel 320: Allocate sub-runners 330: First conveying sub-flow channel 340: Second conveying sub-flow channel 350: Air outlet runner 360:Through hole 361: First annular step groove 362: Second annular step groove 370: Accommodation tank 400:Rotating shaft assembly 401: Fasteners 410:Shaft 420: Temperature marking piece 421:Blade 422: Impeller 500: Infrared thermometer 600: Bushing 700: Second heating body S: process space

當結合附圖閱讀時,從以下詳細描述最佳理解本揭露之態樣。應注意,根據產業中之標準實踐,各種構件未按比例繪製。事實上,為了論述的清楚起見可任意增大或減小各種構件之尺寸。 圖1為本申請實施例公開的製程腔室的剖視圖; 圖2為本申請實施例公開的托盤與轉軸的配合關係圖; 圖3為本申請實施例公開的第一加熱板的結構示意圖; 圖4和圖5分別為本申請實施例公開的製程腔室在不同工作狀態下的工作原理圖; 圖6為本申請實施例公開的紅外測溫器檢測的溫度與時間的關係圖; 圖7為本申請實施例公開的第一加熱板的剖視圖; 圖8為本申請實施例公開的第一加熱板的俯視圖; 圖9為圖8沿A-A向的剖視圖; 圖10為本申請實施例公開的托盤的結構示意圖; 圖11為圖1的局部放大圖。 The present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or reduced for clarity of discussion. Figure 1 is a cross-sectional view of a process chamber disclosed in an embodiment of the present application; Figure 2 is a diagram of the cooperation relationship between the tray and the rotating shaft disclosed in the embodiment of the present application; Figure 3 is a schematic structural diagram of the first heating plate disclosed in the embodiment of the present application; Figures 4 and 5 are respectively diagrams of the working principles of the process chamber disclosed in the embodiments of the present application in different working states; Figure 6 is a diagram showing the relationship between temperature and time detected by the infrared thermometer disclosed in the embodiment of the present application; Figure 7 is a cross-sectional view of the first heating plate disclosed in the embodiment of the present application; Figure 8 is a top view of the first heating plate disclosed in the embodiment of the present application; Figure 9 is a cross-sectional view along the A-A direction of Figure 8; Figure 10 is a schematic structural diagram of the tray disclosed in the embodiment of the present application; Figure 11 is a partial enlarged view of Figure 1.

100:製程腔體 100: Process chamber

200:托盤 200:pallet

300:第一加熱板 300: First heating plate

310:輸入子流道 310:Input sub-channel

320:分配子流道 320: Allocate sub-runners

400:轉軸組件 400:Rotating shaft assembly

700:第二加熱體 700: Second heating body

S:製程空間 S: process space

Claims (12)

一種半導體製程設備的製程腔室,包括一製程腔體、設置在該製程腔體中的一托盤、一第一加熱體、一轉軸組件以及設置在該製程腔體外部的一紅外測溫器,其中: 該第一加熱體包括一第一加熱板; 該托盤可轉動地設於該第一加熱板的頂面上; 該轉軸組件包括一轉軸和一溫度標記件,該轉軸穿設於該第一加熱板、且與該第一加熱板轉動配合,該轉軸的第一端與該托盤相連,使該轉軸能夠隨該托盤轉動,該轉軸的第二端延伸並凸出於該第一加熱板的底面; 該溫度標記件設置於該轉軸的第二端,且能夠隨該轉軸轉動;該紅外測溫器用於檢測旋轉至預設的溫度檢測位置的該溫度標記件的溫度,以週期性地獲得該溫度標記件的溫度。 A process chamber of semiconductor processing equipment, including a process chamber, a tray arranged in the process chamber, a first heating body, a rotating shaft assembly and an infrared thermometer arranged outside the process chamber, in: The first heating body includes a first heating plate; The tray is rotatably located on the top surface of the first heating plate; The rotating shaft assembly includes a rotating shaft and a temperature marker. The rotating shaft passes through the first heating plate and rotates with the first heating plate. The first end of the rotating shaft is connected to the tray, so that the rotating shaft can follow the The tray rotates, and the second end of the rotating shaft extends and protrudes from the bottom surface of the first heating plate; The temperature marker is disposed at the second end of the rotating shaft and can rotate with the rotating shaft; the infrared thermometer is used to detect the temperature of the temperature marker rotated to a preset temperature detection position to periodically obtain the temperature Mark the temperature of the piece. 如請求項1所述的製程腔室,該溫度標記件包括多個葉片,多個該葉片沿該轉軸的周向均勻排布。As in the process chamber of claim 1, the temperature marker includes a plurality of blades, and the plurality of blades are evenly arranged along the circumferential direction of the rotating shaft. 如請求項1所述的製程腔室,該第一加熱板內設有一氣體流道,該氣體流道包括一出氣流道,該出氣流道用於輸送一驅動氣體,該第一加熱板的頂面開設有一出氣口,該出氣口與該出氣流道連通,且與該托盤對應設置;該托盤包括設於該托盤底面的一驅動部,經由該出氣口輸出的該驅動氣體可通過推動該驅動部帶動該托盤轉動。As in the process chamber of claim 1, a gas flow channel is provided in the first heating plate. The gas flow channel includes an air outlet channel. The air outlet channel is used to transport a driving gas. The first heating plate has a gas flow channel. An air outlet is provided on the top surface, and the air outlet is connected with the air outlet flow channel and is arranged corresponding to the tray; the tray includes a driving part provided on the bottom surface of the tray, and the driving gas output through the air outlet can push the The driving part drives the tray to rotate. 如請求項3所述的製程腔室,該第一加熱板的頂面上開設有至少三個該出氣口,該至少三個該出氣口沿該托盤的中軸線的周向均勻分佈。In the process chamber of claim 3, at least three air outlets are provided on the top surface of the first heating plate, and the at least three air outlets are evenly distributed along the circumferential direction of the central axis of the tray. 如請求項3或4所述的製程腔室,該氣體流道還包括一進氣流道,該進氣流道的一端用於與一外部氣源連通,該進氣流道的另一端與該出氣流道連通,以向該出氣流道內輸送該驅動氣體,該進氣流道在水平面上排布,該出氣流道相對於豎直方向傾斜設置。As in the process chamber of claim 3 or 4, the gas flow channel further includes an inlet flow channel, one end of the inlet flow channel is used to communicate with an external gas source, and the other end of the inlet flow channel is connected to The air outlet flow channel is connected to deliver the driving gas into the air outlet channel. The air inlet channel is arranged on the horizontal plane, and the air outlet channel is arranged inclined relative to the vertical direction. 如請求項5所述的製程腔室,該進氣流道包括一輸入子流道、一分配子流道和多個輸送子流道,該輸入子流道的第一端用於與該外部氣源連通,該輸入子流道的第二端與該分配子流道的進氣端連通,該分配子流道具有多個出氣端;多個該輸送子流道的進氣端一一對應地與該分配子流道的多個該進氣端連通; 該第一加熱板的頂面上開設有至少三個該出氣口,該出氣流道包括至少三個出氣子流道,各個該出氣子流道一一對應地與各個該出氣口連通;每個該輸送子流道的出氣端與其中一個該出氣子流道連通。 As for the process chamber of claim 5, the inlet flow channel includes an input sub-channel, a distribution sub-channel and a plurality of transport sub-channels, and the first end of the input sub-channel is used to communicate with the external The air source is connected, and the second end of the input sub-flow channel is connected with the air inlet end of the distribution sub-flow channel. The distribution sub-flow channel has multiple air outlet ends; the air inlet ends of the multiple transport sub-flow channels correspond one to one. The ground is connected to the plurality of air inlet ends of the distribution sub-flow channel; At least three air outlets are provided on the top surface of the first heating plate. The air outlet channel includes at least three air outlet sub-channels, and each air outlet sub-channel communicates with each air outlet in a one-to-one correspondence; each air outlet channel includes at least three air outlet sub-channels. The air outlet end of the conveying sub-flow channel is connected with one of the air outlet sub-channels. 如請求項6所述的製程腔室,該輸入子流道沿第一水平方向延伸設置,該分配子流道的延伸方向與該第一水平方向相互垂直,該輸入子流道的第二端與該分配子流道的進氣端連通; 該輸送子流道為兩個,分別為一第一輸送子流道和一第二輸送子流道,該第一輸送子流道和該第二輸送子流道分別與該分配子流道的兩個出氣端連通,且該第一輸送子流道和該第二輸送子流道相對於該輸入子流道對稱佈置;該分配子流道、該第一輸送子流道和該第二輸送子流道的一端均在該第一加熱板的外表面設有一貫通口,且在該貫通口設置有一密封件; 該出氣口為三個,且沿該托盤的中軸線的周向均勻分佈;該出氣子流道為三個,分別為一第一出氣子流道、一第二出氣子流道和一第三出氣子流道,該第一出氣子流道與該輸入子流道連通,該第二出氣子流道與該第一輸送子流道連通,該第三出氣子流道與該第二輸送子流道連通,且該第一出氣子流道、該第二出氣子流道和該第三出氣子流道分別與三個該出氣口一一對應連通。 As in the process chamber of claim 6, the input sub-flow channel extends along a first horizontal direction, the extension direction of the distribution sub-flow channel is perpendicular to the first horizontal direction, and the second end of the input sub-flow channel Connected to the air inlet end of the distribution sub-flow channel; There are two conveying sub-flow channels, namely a first conveying sub-flow channel and a second conveying sub-flow channel. The first conveying sub-flow channel and the second conveying sub-flow channel are respectively connected with the distribution sub-flow channel. The two air outlets are connected, and the first conveying sub-flow channel and the second conveying sub-flow channel are symmetrically arranged relative to the input sub-flow channel; the distribution sub-flow channel, the first conveying sub-flow channel and the second conveying sub-flow channel One end of the sub-flow channel is provided with a through opening on the outer surface of the first heating plate, and a sealing member is provided at the through opening; There are three air outlets, evenly distributed along the circumferential direction of the central axis of the tray; there are three air outlet sub-channels, which are a first air outlet sub-channel, a second air outlet sub-channel and a third air outlet sub-channel. The first gas outlet sub-flow channel is connected with the input sub-channel, the second gas outlet sub-channel is connected with the first transport sub-channel, the third gas outlet sub-channel is connected with the second transport sub-channel The flow passages are connected, and the first air outlet sub-flow passage, the second air outlet sub-flow passage and the third air outlet sub-flow passage are respectively connected with the three air outlets in a one-to-one correspondence. 如請求項1所述的製程腔室,該製程腔室還包括一軸套,該第一加熱板具有貫通其頂面和底面的一通孔,該通孔內設有一第一環形臺階槽,該軸套套設於該轉軸外,且位於該第一環形臺階槽內。As claimed in claim 1, the process chamber further includes a sleeve, the first heating plate has a through hole penetrating its top surface and bottom surface, and a first annular step groove is provided in the through hole, and the first heating plate has a through hole. The shaft sleeve is sleeved outside the rotating shaft and located in the first annular step groove. 如請求項8所述的製程腔室,該通孔內還設有一第二環形臺階槽,該第一環形臺階槽與該第二環形臺階槽沿該通孔由下至上依次佈置;該托盤包括設於該托盤的底面的一環形配合部,該環形配合部套設於該軸套外,且設置於該第二環形臺階槽內。According to the process chamber of claim 8, a second annular step groove is further provided in the through hole, and the first annular step groove and the second annular step groove are arranged in sequence from bottom to top along the through hole; the tray It includes an annular fitting portion provided on the bottom surface of the tray, the annular fitting portion is sleeved outside the shaft sleeve and is arranged in the second annular step groove. 如請求項1所述的製程腔室,該製程腔室還包括一第二加熱體、一第一端蓋和一第二端蓋;該第一加熱體還包括與該第一加熱板連接的一第一弧形加熱件,該第一加熱板與該第一弧形加熱件之間形成一第一加熱腔;該第二加熱體包括一第二加熱板和一第二弧形加熱件,該第二加熱板與該第二弧形加熱件之間形成一第二加熱腔;該第一加熱體與該第二加熱體相對設置; 該第一端蓋蓋設在該第一加熱體的第一端和該第二加熱體的第一端,該第二端蓋蓋設在該第一加熱體的第二端和該第二加熱體的第二端,該第一加熱板和該第二加熱板相對設置,且二者之間形成一製程空間。 The process chamber according to claim 1, the process chamber further includes a second heating body, a first end cover and a second end cover; the first heating body further includes a heating element connected to the first heating plate. A first arc-shaped heating element, a first heating cavity is formed between the first heating plate and the first arc-shaped heating element; the second heating body includes a second heating plate and a second arc-shaped heating element, A second heating cavity is formed between the second heating plate and the second arc-shaped heating element; the first heating body and the second heating body are arranged oppositely; The first end cap is disposed on the first end of the first heating body and the first end of the second heating body, and the second end cap is disposed on the second end of the first heating body and the second heating body. At the second end of the body, the first heating plate and the second heating plate are arranged oppositely, and a process space is formed between them. 一種半導體製程設備,包括如請求項1至10中任一項所述的製程腔室。A semiconductor processing equipment, including the processing chamber described in any one of claims 1 to 10. 一種托盤的檢測方法,應用於請求項1至10中任一項所述的製程腔室,該檢測方法包括: 啟動該紅外測溫器,並週期性地接收該紅外測溫器在該溫度標記件旋轉至該預設的溫度檢測位置時,檢測到的該溫度標記件的溫度,作為該托盤的溫度; 比較在檢測時間內所獲得的所有該溫度標記件的溫度,並根據比較結果判斷該托盤的溫度的穩定性; 根據該托盤的溫度在單位時間內的獲取次數,並根據該獲取次數計算該托盤的轉速。 A pallet detection method, applied to the process chamber described in any one of claims 1 to 10, the detection method includes: Start the infrared thermometer, and periodically receive the temperature of the temperature marker detected by the infrared thermometer when the temperature marker rotates to the preset temperature detection position as the temperature of the tray; Compare the temperatures of all temperature markers obtained within the detection time, and determine the temperature stability of the tray based on the comparison results; According to the number of acquisition times of the temperature of the pallet in unit time, the rotation speed of the pallet is calculated based on the number of acquisition times.
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