CN103531495B - The method of semiconductor detector, semiconductor detection system and detection underlayer temperature - Google Patents
The method of semiconductor detector, semiconductor detection system and detection underlayer temperature Download PDFInfo
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- CN103531495B CN103531495B CN201210229884.9A CN201210229884A CN103531495B CN 103531495 B CN103531495 B CN 103531495B CN 201210229884 A CN201210229884 A CN 201210229884A CN 103531495 B CN103531495 B CN 103531495B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
A kind of semiconductor detector, it is applied in semiconductor processing equipment, and described semiconductor processing equipment includes reaction cavity, is provided with to support the supporting seat of substrate in described reaction cavity, described reaction cavity has capsule components, and described supporting seat is provided with to position some cavitys of substrate。Described semiconductor detector is fixed in the capsule components of described reaction cavity, thus being capable of the timely detection to underlayer temperature in the heavy membrane process of substrate。Described semiconductor detector can know the position of described substrate, and by the mode moved, described substrate can be detected, thus avoiding stationary detector in prior art to be difficult to problem pinpoint with substrate。It addition, present invention further teaches the semiconductor detection system being made up of this semiconductor detector and the method in order to detect underlayer temperature。
Description
[technical field]
The present invention relates to a kind of semiconductor detector, a kind of semiconductor detection system and a kind of method detecting underlayer temperature。
[background technology]
Utilizing Metalorganic chemical vapor deposition method (MOCVD) to carry out in the epitaxial film growth technique of silicon, machined parameters (such as: temperature, reflectance, emissivity and the rate of curving etc.) needs to be controlled very precisely。Generally, the treatment temperature that the epitaxial film growth technique of silicon needs is between 500 DEG C to 1300 DEG C, and therefore monitoring device is generally disposed at the periphery of reaction chamber, to avoid high temperature in reaction chamber, high pressure and corrosive chemicals。
In the epitaxial film growth technique of silicon, variations in temperature in same wafer (wafer) and between wafer and wafer is necessarily less than 3 DEG C, and in some specific step (such as: MQW deposits, MQWdeposition), its variations in temperature is necessarily less than 1 DEG C of extensive mould production that could realize product。
Generally, pending wafer is along single shaft or biaxial rotated, and therefore in most cases, single fixed detection equipment is only capable of the wafer measuring limited quantity, it is difficult to all of wafer is measured。In order to realize the measurement to numerous wafers, existing system is typically provided with very many fixed detection equipment。It addition, precision often meets process control needs between detecting head and the detecting head of fixed detection equipment。Please join following form, experiments show that, though the commercial high temperature meter of same manufacturer, same model, its at different temperature, it is also different for measuring the obtained measurement parameter of black body radiation。It is to say, in a detection system, the quantity of pyrometer uses more many, and its certainty of measurement is more poor。
Contactless detection technique requires one or more optical channel (viewport)。From optical channel and in order to keep the heat loss purifying gas that optical channel cleans can affect the surface temperature being located immediately at the workpiece (workpiece) below optical channel, calibration that this heat loss can lead to errors and technique change。
Additionally, semiconductor detector disclosed in prior art is generally disposed in load cavity, it can not detect the temperature in the heavy membrane process of substrate, it is difficult to forms detection in time。
Accordingly, it would be desirable to a kind of method developing novel semiconductor detector, semiconductor detection system and detection underlayer temperature, to solve the problems of the prior art。
[summary of the invention]
The technical problem to be solved is in that to provide one to avoid detector and substrate to need to be accurately positioned, and the method that substrate temperature can realize the semiconductor detector of detection, semiconductor detection system and detection underlayer temperature in time。
For solving above-mentioned technical problem, the present invention adopts the following technical scheme that a kind of semiconductor detector, it is applied in semiconductor processing equipment, described semiconductor processing equipment includes reaction cavity, described reaction cavity includes the supporting seat being provided with to support substrate in capsule components and described reaction cavity, described supporting seat is provided with to position some cavitys of described substrate, described semiconductor detector is fixed in the capsule components of described reaction cavity, described semiconductor detector can know the position of described substrate, and by the mode moved, described substrate can be detected, described reaction cavity is MOCVD reaction cavity, described supporting seat includes rotary drive mechanism to drive described supporting seat to rotate。
As further improved technical scheme of the present invention, described semiconductor detector has detector, and described detector is arranged on a motion so that described substrate can be detected by described detector by the mode moved。
As further improved technical scheme of the present invention, described semiconductor detector has substrate location feedback unit, feeds back to described detector with the position by described substrate。
As further improved technical scheme of the present invention, described motion include guide rail and can the slide unit of rectilinear motion on the guideway, described detector is positioned on described slide unit and moves together with described slide unit。
As further improved technical scheme of the present invention, described guide rail is ball-screw, and described motion is additionally provided with to drive the motor of ball-screw, described slide unit to be installed on ball-screw and can be controlled the rectilinear motion of detector by this motor。
As further improved technical scheme of the present invention, described motor is installed on one end of ball-screw, and described motion also includes being installed on the ball-screw other end and the bracer in order to back-up roller ballscrew。
As further improved technical scheme of the present invention, described guide rail is linear bearing, and described slide unit is installed on linear bearing, and described motion is additionally provided with to control the promotion cylinder that described slide unit moves。
As further improved technical scheme of the present invention, described motion also includes ball-screw, described promotion cylinder is installed on one end of ball-screw, and described slide unit is connected to ball-screw, and described promotion cylinder directly drives ball-screw and drives described slide unit to move by ball-screw。
As further improved technical scheme of the present invention, described motion also includes the electromagnetism stop of the described slide unit in some location。
As further improved technical scheme of the present invention, described semiconductor detector also includes the reflection part that pursuit movement mechanism moves together, and described reflection part is in order to reflect back the heat of substrate surface。
As further improved technical scheme of the present invention, described reflection part is slide type reflecting plate group, and it includes the reflecting plate that some stackings are arranged。
As further improved technical scheme of the present invention, described detector is provided with detecting head, and described capsule components is provided with in the face of substrate and carries out the passage detected for detecting head, and no matter which position detecting head moves to, and described reflecting plate is in full swing all the time。
As further improved technical scheme of the present invention, described reflection part is Scroll reflectance coating, and described Scroll reflectance coating is in deployed condition all the time in the motor process of motion。
As further improved technical scheme of the present invention, described semiconductor detector is additionally provided with and is positioned at below reflection part and in order to seal the transparent sealing window of this reaction cavity。
As further improved technical scheme of the present invention, described motion includes rotating shaft and the turning arm that can rotate around this rotating shaft, and described detector is arranged on this turning arm。
As further improved technical scheme of the present invention, described capsule components is box-like, it includes gas shower plate, it is positioned at the cavity roof above described gas shower plate and carries out some passages of detecting in the face of substrate and for detector, each of which passage includes the first detection window running through described gas shower plate up and down and the second detection window running through described cavity roof up and down, described first detection window and the second detection window in the vertical direction are connections, described second detection window forms the quartz window that a bore becomes big at the top of cavity roof, described quartz window is in order to location sealing unit。
As further improved technical scheme of the present invention, described detector is only one and in order to measure the temperature of substrate surface。
As further improved technical scheme of the present invention, described detector is provided with detecting head, and described detecting head can move or at this reaction chamber extracorporeal movement in this reaction cavity。
For solving above-mentioned technical problem, the present invention adopts the following technical scheme that a kind of semiconductor detection system, and it includes above-mentioned semiconductor detector, is positioned at the heating element below supporting seat and connects detector with corresponding heating element to form the intermediary element of closed loop system。
As further improved technical scheme of the present invention, described supporting seat includes pedestal and is fixed on pedestal and in order to support the pedestal of described substrate, described some cavitys are arranged on the upper surface of pedestal, and described heating element is positioned at the lower section of described pedestal。
As further improved technical scheme of the present invention, described semiconductor detector includes the first pyrometer measuring substrate top surface temperature, described semiconductor detection system also includes the second pyrometer measuring pedestal upper surface temperature, described first pyrometer is emissivity-compensated pyrometer, and described second pyrometer is non-emissivity-compensated pyrometer。
As further improved technical scheme of the present invention, described pedestal includes being positioned at the first area at middle part, being positioned at the second area of inner side and be positioned at the 3rd region in outside, described heating element includes being positioned at the first heating element below first area, is positioned at the second heating element below second area and is positioned at the 3rd heating element below the 3rd region, wherein said first heating element is mainly with thinking that first area is heated, described second heating element is mainly with thinking that second area heats, and described 3rd heating element is mainly with thinking the 3rd region heating。
As further improved technical scheme of the present invention, described intermediary element includes the first signal processing circuit being connected with the first pyrometer, the first controller being connected with the first signal processing circuit and the first power supply being connected with the first controller, wherein said first signal processing circuit is in order to record the first pyrometer in the temperature measured by diverse location, and after these temperature and processing temperature are compared, output differential signal gives the first controller, the power that first controller is provided by the first power supply according to this differential signal adjustment, thus adjusting the heat sent by the first heating element。
As further improved technical scheme of the present invention, the secondary signal that described intermediary element includes being connected with the second pyrometer processes circuit, processes the second controller that circuit is connected and the second source being connected with second controller, the heat that described second source adjustment is sent by the second heating element and the 3rd heating element with secondary signal。
As further improved technical scheme of the present invention, described first pyrometer is motion, and described second pyrometer is fixing or motion。
For solving above-mentioned technical problem, the present invention adopts the following technical scheme that a kind of method detecting underlayer temperature, it is characterised in that comprise the steps:
Thering is provided a reaction cavity, described reaction cavity includes capsule components；
Thering is provided a supporting seat, be arranged in this reaction cavity by described supporting seat, described supporting seat can rotate in order to support some substrates and described supporting seat；
Thering is provided a semiconductor detector, be fixed in the capsule components of described reaction cavity by described semiconductor detector, described semiconductor detector can know the position of described substrate, and by the mode moved, described substrate temperature can be detected。
As further improved technical scheme of the present invention, described semiconductor detector has detector, and described detector is arranged on a motion so that the surface temperature of described substrate can be detected by described detector by the mode moved。
As further improved technical scheme of the present invention, described semiconductor detector has substrate location feedback unit, feeds back to described detector with the position by described substrate。
As further improved technical scheme of the present invention, described reaction cavity is MOCVD reaction cavity, and described supporting seat includes rotary drive mechanism to drive described supporting seat to rotate。
As further improved technical scheme of the present invention, described detector is only one。
As further improved technical scheme of the present invention, described detector can rectilinear motion or rotary motion。
As further improved technical scheme of the present invention, described detector is provided with detecting head, and described detecting head can move or at this reaction chamber extracorporeal movement in this reaction cavity, is all capable of the surface temperature of substrate is detected。
As further improved technical scheme of the present invention, also including the reflection part providing a pursuit movement mechanism to move together in the detecting step carry out substrate temperature, described reflection part is in order to reflect back the heat of substrate surface。
As further improved technical scheme of the present invention, described reflection part is slide type reflecting plate group or Scroll reflectance coating, and described reflection part is in deployed condition all the time in the motor process of motion。
As further improved technical scheme of the present invention, also include the heating element being positioned at below supporting seat being provided and connecting detector with corresponding heating element to form the intermediary element of closed loop system, described intermediary element includes the first signal processing circuit being connected with detector, the first controller being connected with the first signal processing circuit and the first power supply being connected with the first controller, wherein said first signal processing circuit is in order to record detector in the temperature measured by diverse location, and after these temperature and processing temperature are compared, output differential signal gives the first controller, the power that first controller is provided by the first power supply according to this differential signal adjustment, thus adjusting the heat sent by heating element。
Compared with prior art, the present invention is by being fixed on semiconductor detector in the capsule components of reaction cavity, thus being capable of the timely detection to underlayer temperature in the heavy membrane process of substrate。It addition, described semiconductor detector can know the position of described substrate, and by the mode moved, described substrate can be detected, thus avoiding stationary detector in prior art to be difficult to problem pinpoint with substrate。
[accompanying drawing explanation]
Fig. 1 is the semiconductor detector of the present invention partial perspective view in the first embodiment, and wherein detector mediates。
Fig. 2 is the partial perspective view behind one angle of semiconductor detector excision in Fig. 1。
Fig. 3 is the partial perspective view that the detector of the semiconductor detector in Fig. 1 is in marginal position。
Fig. 4 is the partial perspective view behind one angle of semiconductor detector excision in Fig. 3。
Fig. 5 is the motion of semiconductor detector of the present invention schematic diagram in the first embodiment。
Fig. 6 is the motion of semiconductor detector of the present invention schematic diagram in the second embodiment。
Fig. 7 is the schematic diagram in conjunction with the first reflection part of the motion in Fig. 5。
Fig. 8 is the schematic diagram in conjunction with the second reflection part of the motion in Fig. 5。
Fig. 9 is the semiconductor detector of the present invention partial perspective view in the second embodiment。
Figure 10 is the partial perspective view behind one angle of semiconductor detector excision in Fig. 9。
Figure 11 is the top view of the semiconductor detector in Fig. 9。
Figure 12 is the semiconductor detector of the present invention partial perspective view in another kind of optional mode。
Figure 13 is the top view of the semiconductor detector in Figure 12。
Figure 14 is the semiconductor detection system of the present invention schematic diagram in the first embodiment。
Figure 15 is the semiconductor detection system of the present invention schematic diagram in the second embodiment。
[detailed description of the invention]
Please join shown in Fig. 1 to Fig. 4, semiconductor detector 100 of the present invention its be applied in semiconductor processing equipment (non-label), described semiconductor processing equipment includes reaction cavity 10, described reaction cavity 10 includes capsule components 2, is provided with to support the supporting seat 1 of substrate in described reaction cavity 10。In the present embodiment, described reaction cavity 10 is MOCVD reaction cavity。Described semiconductor detector 100 is fixed in the capsule components 2 of described reaction cavity 10, thus being capable of the timely detection to underlayer temperature in the heavy membrane process of substrate。It addition, described semiconductor detector 100 can know the position of described substrate, and by the mode moved, described substrate can be detected, thus avoiding stationary detector in prior art to be difficult to problem pinpoint with substrate。Specifically, described semiconductor detector 100 includes being installed in capsule components 2 motion 3 and the reflection part 4 that pursuit movement mechanism 3 moves together。
Please joining shown in Fig. 2, in the illustrated embodiment, described supporting seat 1 is discoid, and it is provided with the cavity 11 of some cylinders of upper surface。These cavitys 11 are in order to house the substrate of correspondence and to realize the effect of the location to substrate and support。The direction of the movement of described motion 3 is A-A。Described supporting seat 1 includes rotary drive mechanism 14 (shown in ginseng Figure 14 and Figure 15) to drive described supporting seat 1 to rotate in the direction of the arrow。
Please joining shown in Fig. 2 and Fig. 4, described capsule components 2 is box-like in the present embodiment。Specifically, described capsule components 2 also includes some passages 20 of running through its upper and lower surface。Described passage 20 is in the face of substrate, say, that the light of substrate surface or heat can pass passage 20 and arrive the end face of capsule components 2。Specifically, described capsule components 2 includes gas shower plate 21 and is positioned at the cavity roof 22 above described gas shower plate 21。Each passage 20 includes the second detection window 202 of the first detection window 201 and upper and lower through cavities roof 22 running through described gas shower plate 21 up and down。Described first detection window 201 detects window 202 in the vertical direction with second and connects。It addition, described second detection window 202 forms the quartz window 203 that a bore becomes big at the top of cavity roof 22, in order to install and location sealing unit, for instance sealing ring etc.。
Described motion 3 include guide rail 31, can on this guide rail 31 slide unit 32 of rectilinear motion and the detector 33 that is installed on slide unit 32 and can move together with slide unit 32。Fig. 1 and Fig. 3 is that detector 33 mediates and the axonometric chart of marginal position respectively。Please joining shown in Fig. 5 and Fig. 6, described guide rail 31 can include ball-screw 34 or linear bearing 35 according to the difference of motion mode, furthermore it is possible to utilize motor 341 or promote cylinder 353 finally to control the movement of detector 33。It addition, described semiconductor detector 100 has substrate location feedback unit (not shown), the position of described substrate to be fed back in time described detector 33。
Please join shown in Fig. 5, specifically, described motion 3 includes ball-screw 34, be installed on ball-screw 34 one end and in order to driving the motor 341 of ball-screw 34, be installed on ball-screw 34 other end and in order to a bracer 342 of back-up roller ballscrew 34。Described slide unit 32 is installed on ball-screw 34 and can finally be controlled the rectilinear motion of detector 33 by the driving of motor 341。Described detector 33 is provided with a detecting head 331, and when measuring, this detecting head 331 can extend in the quartz window 203 of correspondence, to realize being accurately positioned of detecting head 331。It should be understood that the detecting head 331 of described detector 33 can move in reaction cavity 10 or in this outer motion of reaction cavity 10, is all capable of the surface temperature of substrate is detected。
Please join shown in Fig. 6, in another kind of optional mode, described motion 3 includes linear bearing 35, is installed on linear bearing 35 one end and in order to support bracer 351, a ball-screw 352 of linear bearing 35, to be installed on ball-screw 352 one end and in order to drive the promotion cylinder 353 of ball-screw 352。Described slide unit 32 is installed on linear bearing 35, and described slide unit 32 is also connected on ball-screw 352 simultaneously, therefore, slide unit 32 can be driven to move by controlling promotion cylinder 353, and finally control the rectilinear motion of detector 33。It addition, for the shift position of more precise control slide unit 32, described motion 3 be also provided with some electromagnetism stops 354 for slide unit 32 against。
Because when measuring there is certain gap in detecting head 331 and substrate surface, so in passage 20, the temperature of substrate surface had thermal losses before arriving detecting head 331。The reflection part 4 set by semiconductor detector 100 of the present invention is precisely in order to reduce this thermal losses。
Please joining shown in Fig. 7, described reflection part 4 is slide type reflecting plate group, and it includes the reflecting plate 41 that some stackings are arranged。These reflecting plates 41 can be unfolded in the motor process of motion 3, thus playing the function reflected back by heat。In the embodiment shown in figure, owing to reflecting plate 41 is in full swing all the time, therefore, no matter which position detecting head 331 is positioned at, and the heat of substrate surface, once arrive reflecting plate 41 and will being reflected off, ensures that certainty of measurement。
Please joining shown in Fig. 8, in another kind of optional mode, described reflection part 4 is Scroll reflectance coating 43。Described reflectance coating 43 is in deployed condition all the time in the motor process of motion 3, thus playing the function reflected back by heat。In the embodiment shown in Fig. 8, owing to reflectance coating 43 is in full swing all the time, therefore, no matter which position detecting head 331 is positioned at, and the heat of substrate surface, once arrive reflecting plate 41 and will being reflected off, be able to ensure that certainty of measurement equally。
It addition, please join shown in Fig. 1 and Fig. 3, in order to prevent the materials such as dust from entering in the reaction cavity 10 of capsule components 2, the semiconductor detector 100 of the present invention is additionally provided with transparent sealing window 5。Described transparent sealing window 5 is positioned at the lower section of reflection part 4, to play the function of sealed reaction cavity 10。Owing to described transparent sealing window 5 is transparent, therefore the heat of substrate surface can pass through, without influence on the certainty of measurement of detecting head 331。
Fig. 1 to Fig. 4 is shown that the detector 33 of semiconductor detector 100 of the present invention and is arranged to the embodiment of rectilinear motion。Fig. 9 to Figure 13 is shown that the detector 33 ' of semiconductor detector 100 ' of the present invention and is arranged to the embodiment of rotary motion。
Please joining shown in Fig. 9 to Figure 13, semiconductor detector 100 ' of the present invention differs primarily in that motion 3 ' with the semiconductor detector 100 in Fig. 1 to Fig. 4。Described motion 3 ' includes rotating shaft 37 ', rotate around rotating shaft 37 ' turning arm 38 ' and the detector 33 ' being arranged at turning arm 38 ' end。Described turning arm 38 ' drives detector 33 ' to rotate together in the process rotated, thus realizing the measurement (such as, temperature survey) to substrate surface。In mode shown in Figure 11, the movement locus of the detecting head 331 ' of detector 33 ' is just past the center of substrate；And in the mode shown in Figure 13, the movement locus of the detecting head 331 ' of detector 33 ' is through the edge of substrate。It will be appreciated, of course, that the movement locus of the detecting head 331 ' of described detector 33 ' is capable of any position through substrate by changing radius of turn。
Person of an ordinary skill in the technical field is it should be understood that the core of semiconductor detector of the present invention 100,100 ' is in that described semiconductor detector 100,100 ' is fixed in the capsule components 2 of described reaction cavity 10, thus being capable of the detection (such as, temperature survey) in time to substrate in the heavy membrane process of substrate。It addition, described semiconductor detector 100,100 ' can know the position of described substrate, and by the mode moved, described substrate can be detected, thus avoiding stationary detector in prior art to be difficult to problem pinpoint with substrate。But, " motion " mode of detector 33,33 ' is varied, rectilinear motion or the rotary motion of Fig. 9 to Figure 13 citing that no matter above-mentioned Fig. 1 to Fig. 4 illustrates are all extremely typical " motion " mode, and any mode being capable of " motion " in addition all should include within the present invention。It addition, although the rectilinear motion of Fig. 1 to Fig. 4 citing is one-dimensional rectilinear motion (Y-direction), it is to be understood that, according to actual needs, the equally possible rectilinear motion (X, Y-direction) being arranged to two dimension of this rectilinear motion。The mode of the simplest rectilinear motion realizing two dimension is exactly additionally increase another track perpendicular with ball-screw 34 place track。Person of an ordinary skill in the technical field, it should be understood that the rectilinear motion of two dimension can realize according to the travel mechanism of the cutter of Digit Control Machine Tool in prior art, does not repeat them here。
Compared to prior art, semiconductor detector 100,100 ' of the present invention is fixed in the capsule components 2 of described reaction cavity 10, thus being capable of the detection (such as, temperature survey) in time to substrate in the heavy membrane process of substrate。Described semiconductor detector 100,100 ' can know the position of described substrate, and by the mode moved, described substrate can be detected, thus avoiding stationary detector in prior art to be difficult to problem pinpoint with substrate。It addition, rotated and the motion of motion 3,3 ' cooperates by supporting seat 1, described campaign-styled detector 33,33 ' can monitor all of substrate。Detector 33,33 ' is designed to the mode (no matter being rectilinear motion or rotary motion) of motion, it is only necessary to a detector 33,33 ' just can measure the temperature of various location, thus being greatly saved the quantity of detector 33,33 '。It addition, well solve thermal losses by arranging reflection part 4。
Shown in Figure 14 is the fundamental diagram after the semiconductor detector 100 of the present invention is applied to Detection & Controling underlayer temperature。Described semiconductor detector 100 is collectively forming a semiconductor detection system 200 with other element。Specifically, the supporting seat 1 of described semiconductor detector 100 includes pedestal 12 and is fixed on pedestal 12 and in order to support the pedestal 13 of substrate。Described detector 33 includes the first pyrometer 51 being arranged at above substrate 23。It addition, described semiconductor detection system 200 also includes the second pyrometer 52 being arranged at above pedestal 13。Described semiconductor detection system 200 also includes being positioned at the heating element 6 below pedestal 12 and connects first, second pyrometer 51,52 with corresponding heating element 6 to form some intermediary element of closed loop system。
Described first pyrometer 51 is substrate pyrometer, and it is in order to measure the temperature of the upper surface 231 of substrate 23。Described second pyrometer 52 is carrier pyrometer operative, and it is in order to measure the temperature of the upper surface 131 of pedestal 13。Please join shown in Figure 14, in the first embodiment of semiconductor detection system 200 of the present invention, described first pyrometer 51 can carry out moving linearly or rotating around rotating shaft along arrow, and measured the temperature (describing in detail after a while) of various location by above-mentioned motion。In the present embodiment, described second pyrometer 52 is fixing。
In the present embodiment, described pedestal 12 be divided into be positioned at middle part first area 121, be positioned at inner side second area 122 and be positioned at outside the 3rd region 123。Correspondingly, described heating element 6 includes being positioned at the first heating element 61 below first area 121, is positioned at the second heating element 62 below second area 122 and is positioned at the 3rd heating element 63 below the 3rd region 123, wherein said first heating element 61 is mainly with thinking that first area 121 is heated, described second heating element 62 is mainly with thinking that second area 122 heats, and described 3rd heating element 63 is mainly with thinking that the 3rd region 123 is heated。Preferably, described first heating element the 61, second heating element 62 and the 3rd heating element 63 are symmetricly set in the both sides at the center of supporting seat 1。
Described intermediary element includes the first signal processing circuit 511 being connected with the first pyrometer 51, the first controller 512 being connected with the first signal processing circuit 511 and the first power supply 513 being connected with the first controller 512, wherein said first signal processing circuit 511 is in order to record the first pyrometer 51 in the temperature measured by diverse location, and after these temperature and processing temperature being compared, output differential signal gives the first controller 512。The power that first controller 512 is provided by the first power supply 513 according to this differential signal adjustment, thus adjusting the heat sent by the first heating element 61。
Described first pyrometer 51 is emissivity-compensated pyrometer, and term " emissivity-compensated pyrometer " refers to a kind of traditional instrument。Dispose this instrument with the heat radiation of Measuring Object, and this instrument also can be disposed to measure an object parameters about object emission rate。Therefore, one energy pinpoint accuracy of this instrument offer represents the signal of the temperature of object, regardless of the change of this object emission rate。Such as, except measuring the thermal-radiating traditional element sent by object, one emissivity-compensated pyrometer can include an aiming need the width of Measuring Object penetrate-radiated element (such as, laser instrument) and a detector, for measuring the thermal-radiating ratio from laser instrument being reflected by the object。Typical emissivity pyrometer is only the object with specular reflectivity and provides accurate temperature reading。For example, described first pyrometer 51 can move between position A (corresponding to a certain substrate 23) and position B (corresponding to another substrate 23), and wherein position A and position B all falls within substrate 23。When the first pyrometer 51 is positioned at position A, it receives the heat radiation of the upper surface from position A；When the first pyrometer 51 is positioned at position B, it receives the heat radiation of the upper surface from position B。
Described second pyrometer 52 is non-emissivity-compensated pyrometer, represents the heat radiation colliding on this pyrometer。In the present embodiment, described second pyrometer 52 is two, and certainly, in other embodiments, described second pyrometer 52 can also be one or more than two。The regional signal that second pyrometer 52 provides can not show the actual temperature of pedestal 13 in zones of different exactly。Heat radiation from each region of pedestal 13 is a function of pedestal surface emissivity, is also the function of temperature。Pedestal 13 is made up of the material of unknown emissivity, and owing to can deposit various material in pedestal surface, its emissivity changes with use precipitation equipment every time。Additionally, the emissivity of pedestal surface varies with temperature and changes。But, the relation between the whole upper surface of pedestal 13, emissivity and the temperature of pedestal 13 is actually identical。Therefore, if two regions in pedestal surface send the thermal radiation of same intensity, then the temperature that can be determined that them is identical。Similarly, if the thermal radiation intensity that the Part I of pedestal surface is launched is higher than the Part II on this surface, then the temperature of Part I is just higher。
The secondary signal that described intermediary element includes being connected with the second pyrometer 52 processes circuit 611, processes the second controller 612 that circuit 611 is connected and the second source 613 being connected with second controller 612 with secondary signal, and wherein secondary signal processes circuit 611 and is arranged to the reception signal from these the second pyrometers 52。
According to the method detecting underlayer temperature in first embodiment of the invention, it comprises the steps: to provide a reaction cavity 10, and described reaction cavity 10 includes capsule components 2；Thering is provided a supporting seat 1, be arranged in this reaction cavity 10 by described supporting seat 1, described supporting seat 1 can rotate in order to support some substrates 23 and described supporting seat 1；One semiconductor detector 100,100 ' is provided, described semiconductor detector 100,100 ' is fixed in the capsule components 2 of described reaction cavity 10, described semiconductor detector 100,100 ' can know the position of described substrate, and by the mode moved, the surface temperature of substrate 23 can be detected。Described semiconductor detector 100,100 ' has detector 33,33 ', and described detector 33,33 ' is arranged at a motion 3,3 ' above so that described substrate 23 be detected by the mode that described detector 33,33 ' can pass through to move。It addition, also include the reflection part 4 providing a pursuit movement mechanism 3 to move together in the detecting step that the surface temperature of substrate 23 is carried out, described reflection part 4 is in order to reflect back the heat on substrate 23 surface。Specifically, some substrates 23 it are mounted with in some cavitys 11 of pedestal 13, the processing temperature that first controller 512 is transmitted by the first signal processing circuit 511 and a processing sets up temperature compare, and obtain a rub-out signal, and provide a correction signal to the first power supply 513。The transfer function of a first controller 512 desirably PID, or " PID " control function, in this function, correction signal includes: the item proportional to rub-out signal, to the proportional item of integer of rub-out signal time-out and the item proportional with the first derivative of rub-out signal。Therefore, if there is difference between processing sets up temperature and average processing temperature, the first controller 512 just adjusts the power provided by the first power supply 513。Such as, if processing temperature is lower than processing sets up temperature, the first controller 512 can signal the first power supply 513 increases the power sending the first heating element 62 to, until processing temperature and processing sets up temperature are in rational difference range。
When the second pyrometer 52 is in position C, secondary signal processes the differential signal after the temperature at C place, position is stably compared by circuit 611 with processing and the preselected level representing required differential signal compares。Generally, keeping the place of identical temperature in hope, this preselected level is zero。Second controller 612 provides a control signal, it is desirable to use one is similar to PID transfer function as discussed above。This control signal makes second source 613 increase or reduce the power sending the second heating element 62 to, until Temperature Matching。
Similarly, when the second pyrometer 52 is moved to position D along arrow by position C, secondary signal processes circuit 611 and differential signal and the preselected level representing required differential signal is compared。Generally, keeping the place of identical temperature in hope, this preselected level is zero。Second controller 612 provides a control signal, and this control signal makes second source 613 increase or reduce the power sending the 3rd heating element 63 to, until Temperature Matching。
In the present invention, the first pyrometer 51 is designed to the mode (no matter being rectilinear motion or rotary motion) of motion, it is only necessary to a pyrometer just can measure the temperature of substrate 23 upper surface 231, thus being greatly saved the quantity of pyrometer。Correspondingly, also save while saving the quantity of pyrometer prior art is connected with each pyrometer comparator, controller, the element such as power supply。What is more important, described in the background technology of the present invention, even if same manufacturer, same model, the pyrometer of same batch, its homogeneity of product is often poor, if it is to say, use multiple pyrometer to test temperature, the conclusion obtained is often different。And technical scheme is because only with a pyrometer, therefore, it is possible to avoid the problems referred to above completely, coarse problem that positions between pyrometer and pyrometer in prior art can be it also avoid simultaneously。
Please join shown in Figure 15, semiconductor detection system 200 ' of the present invention and the first better embodiment are distinctive in that: in the second better embodiment, second pyrometer 52 ' only arranges one, and this second pyrometer 52 ' also is able to along arrow movement two diverse locations of the second pyrometer 52 ' (solid line in figure and dotted line show), by comparing the first pyrometer 51 ' and the second pyrometer 52 ' difference in various location, control signal is provided by corresponding controller, the power supply making correspondence increases or reduces the power of the heating element sending correspondence to, until Temperature Matching。
For clarity sake, above-mentioned first, second signal processing circuit 511,611, first, second controller 512,612 and first, second power supply 513,613 all shows with the form of functional device。Certainly, those of ordinary skill in the art is it is understood that these elements can be carried out respectively, or can integrate mutually。It is of course possible to understand, the motion mode of the detector 33,33 ' of semiconductor detector 100,100 ' of the present invention can pass through program and realize detection automatically。Similar, the semiconductor detection system 200,200 ' of the present invention can also be passed through program and realize automatically controlling。
In sum, these are only presently preferred embodiments of the present invention, should not limiting the scope of the present invention with this, namely every simple equivalence made according to claims of the present invention and description of the invention content changes and modifies, and all should still remain within the scope of the patent。
Claims (35)
1. a semiconductor detector, it is applied in semiconductor processing equipment, described semiconductor processing equipment includes reaction cavity, described reaction cavity includes the supporting seat being provided with to support substrate in capsule components and described reaction cavity, described supporting seat is provided with to position some cavitys of described substrate, it is characterized in that: described semiconductor detector is fixed in the capsule components of described reaction cavity, described semiconductor detector can know the position of described substrate, and by the mode moved, described substrate can be detected, described reaction cavity is MOCVD reaction cavity, described supporting seat includes rotary drive mechanism to drive described supporting seat to rotate。
2. semiconductor detector as claimed in claim 1, it is characterised in that: described semiconductor detector has detector, and described detector is arranged on a motion so that described substrate can be detected by described detector by the mode moved。
3. semiconductor detector as claimed in claim 2, it is characterised in that: described semiconductor detector has substrate location feedback unit, feeds back to described detector with the position by described substrate。
4. semiconductor detector as claimed in claim 2, it is characterised in that: described motion include guide rail and can the slide unit of rectilinear motion on the guideway, described detector is positioned on described slide unit and moves together with described slide unit。
5. semiconductor detector as claimed in claim 4, it is characterized in that: described guide rail is ball-screw, described motion is additionally provided with to drive the motor of ball-screw, described slide unit to be installed on ball-screw and can be controlled the rectilinear motion of detector by this motor。
6. semiconductor detector as claimed in claim 5, it is characterised in that: described motor is installed on one end of ball-screw, and described motion also includes being installed on the ball-screw other end and the bracer in order to back-up roller ballscrew。
7. semiconductor detector as claimed in claim 4, it is characterised in that: described guide rail is linear bearing, and described slide unit is installed on linear bearing, and described motion is additionally provided with to control the promotion cylinder that described slide unit moves。
8. semiconductor detector as claimed in claim 7, it is characterized in that: described motion also includes ball-screw, described promotion cylinder is installed on one end of ball-screw, described slide unit is connected to ball-screw, and described promotion cylinder directly drives ball-screw and drives described slide unit to move by ball-screw。
9. semiconductor detector as claimed in claim 7, it is characterised in that: described motion also includes the electromagnetism stop of the described slide unit in some location。
10. semiconductor detector as claimed in claim 2, it is characterised in that: described semiconductor detector also includes the reflection part that pursuit movement mechanism moves together, and described reflection part is in order to reflect back the heat of substrate surface。
11. semiconductor detector as claimed in claim 10, it is characterised in that: described reflection part is slide type reflecting plate group, and it includes the reflecting plate that some stackings are arranged。
12. semiconductor detector as claimed in claim 11, it is characterized in that: described detector is provided with detecting head, described capsule components is provided with in the face of substrate and carries out the passage detected for detecting head, and no matter which position detecting head moves to, and described reflecting plate is in full swing all the time。
13. semiconductor detector as claimed in claim 10, it is characterised in that: described reflection part is Scroll reflectance coating, and described Scroll reflectance coating is in deployed condition all the time in the motor process of motion。
14. semiconductor detector as claimed in claim 10, it is characterised in that: described semiconductor detector is additionally provided with and is positioned at below reflection part and in order to seal the transparent sealing window of this reaction cavity。
15. semiconductor detector as claimed in claim 2, it is characterised in that: described motion includes rotating shaft and the turning arm that can rotate around this rotating shaft, and described detector is arranged on this turning arm。
16. semiconductor detector as claimed in claim 2, it is characterized in that: described capsule components is box-like, it includes gas shower plate, it is positioned at the cavity roof above described gas shower plate and carries out some passages of detecting in the face of described substrate and for detector, each of which passage includes the first detection window running through described gas shower plate up and down and the second detection window running through described cavity roof, described first detection window and the second detection window in the vertical direction are connections, described second detection window forms the quartz window that a bore becomes big at the top of cavity roof, described quartz window is in order to location sealing unit。
17. semiconductor detector as claimed in claim 2, it is characterised in that: described detector is only one and in order to measure the temperature of substrate surface。
18. semiconductor detector as claimed in claim 2, it is characterised in that: described detector is provided with detecting head, and described detecting head can move or at this reaction chamber extracorporeal movement in this reaction cavity。
19. a semiconductor detection system, it is characterised in that: include the semiconductor detector as described in any one in claim 1 to 18, be positioned at the heating element below supporting seat and connect detector with corresponding heating element to form the intermediary element of closed loop system。
20. semiconductor detection system as claimed in claim 19, it is characterized in that: described supporting seat includes pedestal and is fixed on pedestal and in order to support the pedestal of described substrate, described some cavitys are arranged on the upper surface of pedestal, and described heating element is positioned at the lower section of described pedestal。
21. semiconductor detection system as claimed in claim 20, it is characterized in that: described semiconductor detector includes measuring the first pyrometer of substrate top surface temperature, described semiconductor detection system also includes the second pyrometer measuring pedestal upper surface temperature, described first pyrometer is emissivity-compensated pyrometer, and described second pyrometer is non-emissivity-compensated pyrometer。
22. semiconductor detection system as claimed in claim 21, it is characterized in that: described pedestal includes being positioned at the first area at middle part, it is positioned at the second area of inner side and is positioned at the 3rd region in outside, described heating element includes the first heating element being positioned at below first area, it is positioned at the second heating element below second area and is positioned at the 3rd heating element below the 3rd region, wherein said first heating element is mainly with thinking that first area is heated, described second heating element is mainly with thinking that second area heats, described 3rd heating element is mainly with thinking the 3rd region heating。
23. semiconductor detection system as claimed in claim 22, it is characterized in that: described intermediary element includes the first signal processing circuit being connected with the first pyrometer, the first controller being connected with the first signal processing circuit and the first power supply being connected with the first controller, wherein said first signal processing circuit is in order to record the first pyrometer in the temperature measured by diverse location, and after these temperature and processing temperature are compared, output differential signal gives the first controller, the power that first controller is provided by the first power supply according to this differential signal adjustment, thus adjusting the heat sent by the first heating element。
24. semiconductor detection system as claimed in claim 23, it is characterized in that: the secondary signal that described intermediary element includes being connected with the second pyrometer processes circuit, processes the second controller that circuit is connected and the second source being connected with second controller, the heat that described second source adjustment is sent by the second heating element and the 3rd heating element with secondary signal。
25. semiconductor detection system as claimed in claim 21, it is characterised in that: described first pyrometer is motion, and described second pyrometer is fixing or motion。
26. the method detecting underlayer temperature, it is characterised in that comprise the steps:
Thering is provided a reaction cavity, described reaction cavity includes capsule components；
Thering is provided a supporting seat, be arranged in this reaction cavity by described supporting seat, described supporting seat can rotate in order to support some substrates and described supporting seat；
Thering is provided a semiconductor detector, be fixed in the capsule components of described reaction cavity by described semiconductor detector, described semiconductor detector can know the position of described substrate, and by the mode moved, described substrate temperature can be detected。
27. the method detecting underlayer temperature as claimed in claim 26, it is characterized in that: described semiconductor detector has detector, described detector is arranged on a motion so that the surface temperature of described substrate can be detected by described detector by the mode moved。
28. the method detecting underlayer temperature as claimed in claim 27, it is characterised in that: described semiconductor detector has substrate location feedback unit, feeds back to described detector with the position by described substrate。
29. the method detecting underlayer temperature as claimed in claim 26, it is characterised in that: described reaction cavity is MOCVD reaction cavity, and described supporting seat includes rotary drive mechanism to drive described supporting seat to rotate。
30. the method detecting underlayer temperature as claimed in claim 27, it is characterised in that: described detector is only one。
31. the method detecting underlayer temperature as claimed in claim 27, it is characterised in that: described detector can rectilinear motion or rotary motion。
32. the method detecting underlayer temperature as claimed in claim 27, it is characterized in that: described detector is provided with detecting head, described detecting head can move or at this reaction chamber extracorporeal movement in this reaction cavity, is all capable of the surface temperature of substrate is detected。
33. the method detecting underlayer temperature as claimed in claim 27, it is characterized in that: also including the reflection part providing a pursuit movement mechanism to move together in the detecting step carry out substrate temperature, described reflection part is in order to reflect back the heat of substrate surface。
34. the method detecting underlayer temperature as claimed in claim 33, it is characterised in that: described reflection part is slide type reflecting plate group or Scroll reflectance coating, and described reflection part is in deployed condition all the time in the motor process of motion。
35. the method detecting underlayer temperature as claimed in claim 27, it is characterized in that: also include the heating element being positioned at below supporting seat being provided and connecting detector with corresponding heating element to form the intermediary element of closed loop system, described intermediary element includes the first signal processing circuit being connected with detector, the first controller being connected with described first signal processing circuit and the first power supply being connected with described first controller, wherein said first signal processing circuit is in order to record described detector in the temperature measured by diverse location, and after these temperature and processing temperature are compared, output differential signal gives the first controller, the power that first controller is provided by described first power supply according to this differential signal adjustment, thus adjusting the heat sent by heating element。
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