TW202348836A - 組成物 - Google Patents

組成物 Download PDF

Info

Publication number
TW202348836A
TW202348836A TW112106297A TW112106297A TW202348836A TW 202348836 A TW202348836 A TW 202348836A TW 112106297 A TW112106297 A TW 112106297A TW 112106297 A TW112106297 A TW 112106297A TW 202348836 A TW202348836 A TW 202348836A
Authority
TW
Taiwan
Prior art keywords
compound
resin
composition
group
onium salt
Prior art date
Application number
TW112106297A
Other languages
English (en)
Chinese (zh)
Inventor
成田萌
水谷篤史
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202348836A publication Critical patent/TW202348836A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW112106297A 2022-02-22 2023-02-21 組成物 TW202348836A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-026014 2022-02-22
JP2022026014 2022-02-22

Publications (1)

Publication Number Publication Date
TW202348836A true TW202348836A (zh) 2023-12-16

Family

ID=87765740

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112106297A TW202348836A (zh) 2022-02-22 2023-02-21 組成物

Country Status (2)

Country Link
TW (1) TW202348836A (fr)
WO (1) WO2023162868A1 (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102369258B (zh) * 2009-03-30 2014-12-10 东丽株式会社 导电膜去除剂及导电膜去除方法
JPWO2021210310A1 (fr) * 2020-04-16 2021-10-21

Also Published As

Publication number Publication date
WO2023162868A1 (fr) 2023-08-31

Similar Documents

Publication Publication Date Title
TWI737798B (zh) 處理液、基板的清洗方法、半導體裝置的製造方法
TW201819612A (zh) 處理液及積層體的處理方法
WO2021005980A1 (fr) Composition, kit et procédé de traitement pour substrat
JP7469474B2 (ja) 半導体基板用洗浄液
WO2021230063A1 (fr) Solution de nettoyage et procédé de nettoyage de substrat semi-conducteur
TW202116996A (zh) 處理液、試劑盒、處理液的製造方法、基板的清洗方法、基板的處理方法
US20230099612A1 (en) Treatment liquid, chemical mechanical polishing method, and method for treating semiconductor substrate
US20220336209A1 (en) Cleaning method and cleaning liquid
WO2022196716A1 (fr) Composition et procédé de traitement de substrat
WO2021205797A1 (fr) Solution de nettoyage pour substrat semi-conducteur
TW202140752A (zh) 處理液、處理液收容體
TW202348836A (zh) 組成物
US20230145012A1 (en) Cleaning liquid for semiconductor substrate
US20230065213A1 (en) Cleaning fluid and cleaning method
WO2023054233A1 (fr) Composition et procédé pour le traitement d'un objet à traiter
US20240002725A1 (en) Composition and method for treating substrate
TW202108753A (zh) 清洗劑組成物
US20230365902A1 (en) Composition and substrate washing method
WO2023136081A1 (fr) Liquide chimique, procédé de fabrication de substrat modifié, et procédé de fabrication de stratifié
WO2022176663A1 (fr) Liquide de nettoyage et procédé de nettoyage d'un substrat semi-conducteur
WO2021039701A1 (fr) Liquide de traitement
WO2023157655A1 (fr) Composition, composé, résine, procédé de traitement de substrat et procédé de production de dispositif à semi-conducteur
US20230143521A1 (en) Method for producing treatment liquid
TW202411792A (zh) 組成物、被處理物的處理方法、半導體器件的製造方法
WO2023189353A1 (fr) Liquide de traitement, procédé de traitement et procédé de fabrication de dispositif électronique