TW202347655A - 包括位於襯底之間的互連晶粒的封裝 - Google Patents

包括位於襯底之間的互連晶粒的封裝 Download PDF

Info

Publication number
TW202347655A
TW202347655A TW112115142A TW112115142A TW202347655A TW 202347655 A TW202347655 A TW 202347655A TW 112115142 A TW112115142 A TW 112115142A TW 112115142 A TW112115142 A TW 112115142A TW 202347655 A TW202347655 A TW 202347655A
Authority
TW
Taiwan
Prior art keywords
substrate
die
package
interconnect
interconnects
Prior art date
Application number
TW112115142A
Other languages
English (en)
Chinese (zh)
Inventor
洋楊 孫
志杰 王
偉 王
馬克思 徐
Original Assignee
美商高通公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商高通公司 filed Critical 美商高通公司
Publication of TW202347655A publication Critical patent/TW202347655A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01936—Manufacture or treatment of bond pads using blanket deposition in solid form, e.g. by using a powder or by laminating a foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
TW112115142A 2022-05-11 2023-04-24 包括位於襯底之間的互連晶粒的封裝 TW202347655A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/741,998 2022-05-11
US17/741,998 US12500187B2 (en) 2022-05-11 2022-05-11 Package comprising an interconnection die located between substrates

Publications (1)

Publication Number Publication Date
TW202347655A true TW202347655A (zh) 2023-12-01

Family

ID=86387332

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112115142A TW202347655A (zh) 2022-05-11 2023-04-24 包括位於襯底之間的互連晶粒的封裝

Country Status (7)

Country Link
US (1) US12500187B2 (enExample)
EP (1) EP4523260A1 (enExample)
JP (1) JP2025515593A (enExample)
KR (1) KR20250008858A (enExample)
CN (1) CN119174007A (enExample)
TW (1) TW202347655A (enExample)
WO (1) WO2023219785A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230299123A1 (en) * 2022-03-18 2023-09-21 Intel Corporation Inductors for hybrid bonding interconnect architectures
US20240071848A1 (en) * 2022-08-25 2024-02-29 Intel Corporation Through glass vias (tgvs) in glass core substrates

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4551321B2 (ja) * 2005-07-21 2010-09-29 新光電気工業株式会社 電子部品実装構造及びその製造方法
US7838337B2 (en) 2008-12-01 2010-11-23 Stats Chippac, Ltd. Semiconductor device and method of forming an interposer package with through silicon vias
US8618654B2 (en) * 2010-07-20 2013-12-31 Marvell World Trade Ltd. Structures embedded within core material and methods of manufacturing thereof
US8217502B2 (en) * 2010-06-08 2012-07-10 Stats Chippac Ltd. Integrated circuit packaging system with multipart conductive pillars and method of manufacture thereof
US20140035935A1 (en) 2012-08-03 2014-02-06 Qualcomm Mems Technologies, Inc. Passives via bar
US9607967B1 (en) 2015-11-04 2017-03-28 Inotera Memories, Inc. Multi-chip semiconductor package with via components and method for manufacturing the same
US9893042B2 (en) 2015-12-14 2018-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
CN106971993B (zh) * 2016-01-14 2021-10-15 三星电子株式会社 半导体封装件
WO2020010136A1 (en) * 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Molded direct bonded and interconnected stack
KR102932512B1 (ko) * 2020-04-29 2026-03-03 삼성전자주식회사 배선 구조체 및 이를 포함하는 반도체 패키지
CN114334854A (zh) * 2020-09-30 2022-04-12 华为技术有限公司 芯片及其制造方法、电子设备
WO2022139828A1 (en) * 2020-12-23 2022-06-30 Intel Corporation Device-to-device communication system, packages, and package system
US12494436B2 (en) * 2021-06-23 2025-12-09 Taiwan Semiconductor Manufacturing Company Limited Integrated passive device dies and methods of forming and placement of the same
US11855057B2 (en) * 2021-07-08 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of forming the same
US20230197697A1 (en) * 2021-12-16 2023-06-22 Intel Corporation Microelectronic assemblies with glass substrates and thin film capacitors
US20230207436A1 (en) * 2021-12-23 2023-06-29 Adel A. Elsherbini Via micro-modules for through mold via replacement

Also Published As

Publication number Publication date
JP2025515593A (ja) 2025-05-20
KR20250008858A (ko) 2025-01-16
CN119174007A (zh) 2024-12-20
EP4523260A1 (en) 2025-03-19
US20230369261A1 (en) 2023-11-16
US12500187B2 (en) 2025-12-16
WO2023219785A1 (en) 2023-11-16

Similar Documents

Publication Publication Date Title
TW202331958A (zh) 包括具有柱互連和具有空腔的阻焊層的襯底的封裝
TW202418497A (zh) 包括位於整合元件與金屬化部分之間的芯粒的封裝
TW202347655A (zh) 包括位於襯底之間的互連晶粒的封裝
TW202347656A (zh) 包括位於金屬化部分之間的互連晶粒的封裝
TW202435387A (zh) 包括整合元件、小晶片和金屬化部分的封裝
TW202329367A (zh) 具有背側金屬層的整合的裝置的封裝
TW202412236A (zh) 包括第一基板、第二基板和耦合到第二基板的底表面的電裝置的封裝
US20240038831A1 (en) Package with a substrate comprising embedded stacked trench capacitor devices
TW202329366A (zh) 包括具有高密度互連的基板的封裝
TW202312401A (zh) 包括具有包含凸部的焊盤互連的基板的封裝
TW202324621A (zh) 包含位於焊料互連之間的通道互連的封裝
TW202401690A (zh) 包括基板和配置用於高密度互連的互連晶粒的封裝
US20240047335A1 (en) Package comprising an integrated device and a first metallization portion coupled to a second metallization portion
US20260101805A1 (en) Package comprising a stack of integrated devices and a plurality of wire bonds
TW202349592A (zh) 包括具有被配置用於背側配電網的橋的基板的封裝
TW202315032A (zh) 包括具有耦接到跡線互連的通孔互連的基板的封裝
WO2025064238A1 (en) Package comprising a substrate with cavity, and an integrated device located in the cavity of the substrate
TW202318583A (zh) 包括具有高密度互連的基板的封裝
TW202234633A (zh) 具有包括周邊互連的基板的封裝