TW202344583A - Film for forming protective coating, composite sheet for forming protective coating, protective coating-equipped semiconductor chip, and semiconductor device - Google Patents

Film for forming protective coating, composite sheet for forming protective coating, protective coating-equipped semiconductor chip, and semiconductor device Download PDF

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TW202344583A
TW202344583A TW112105735A TW112105735A TW202344583A TW 202344583 A TW202344583 A TW 202344583A TW 112105735 A TW112105735 A TW 112105735A TW 112105735 A TW112105735 A TW 112105735A TW 202344583 A TW202344583 A TW 202344583A
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protective film
film
forming
resin
atoms
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上村和恵
渡邉康貴
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日商琳得科股份有限公司
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    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

The present invention relates to: a curable film for forming a protective coating, wherein the ratio of the number of phosphorous atoms to the total number of carbon atoms, nitrogen atoms, oxygen atoms, phosphorous atoms, and silicon atoms is 0.4 at% or more as detected by analyzing through X-ray photoelectron spectrometry at least one surface of said film for forming a protective coating, and the copper-foil peel strength of a cured product of said film for forming a protective coating is 3.0 N/10 mm or more; a composite sheet for forming a protective coating using said film for forming a protective coating; a protective coating-equipped semiconductor chip; and a semiconductor device.

Description

保護膜形成用膜、保護膜形成用複合片、附保護膜之半導體晶片及半導體裝置Films for protective film formation, composite sheets for protective film formation, semiconductor wafers and semiconductor devices with protective films

本發明有關保護膜形成用膜、保護膜形成用複合片、附保護膜之半導體晶片及半導體裝置。The present invention relates to a film for forming a protective film, a composite sheet for forming a protective film, a semiconductor wafer with a protective film, and a semiconductor device.

近年來,半導體裝置之製造係適用將電路面朝向基板側之狀態將半導體晶片安裝於基板上之所謂稱為面朝下(face down)方式之安裝方法而進行。 於面朝下方式中,為了使半導體晶片之電路面上形成的凸塊等電極與基板接合,有時以不成為半導體晶片之與電路面相反側之背面剝除之狀態之方式,於半導體晶片的背面形成保護膜。 保護膜於半導體晶片之製造過程及半導體晶片之安裝後,發揮保護半導體晶片免受外部衝擊等的作用。又保護膜可利用於雷射列印之半導體晶片的識別、裝飾等。此外,保護膜亦可作為防止電路誤動作之遮光層發揮作用。 In recent years, semiconductor devices are manufactured by applying a so-called face down mounting method in which a semiconductor chip is mounted on a substrate with the circuit surface facing the substrate side. In the face-down method, in order to bond electrodes such as bumps formed on the circuit surface of the semiconductor wafer to the substrate, the semiconductor wafer is sometimes placed in a state where the back surface opposite to the circuit surface is not peeled off. A protective film is formed on the back. The protective film plays a role in protecting the semiconductor chip from external impact during the manufacturing process of the semiconductor chip and after the semiconductor chip is installed. In addition, the protective film can be used for identification and decoration of laser-printed semiconductor chips. In addition, the protective film also functions as a light-shielding layer to prevent circuit malfunction.

保護膜係使用例如保護膜形成用膜而形成。作為保護膜形成用膜,基於機械強度、耐熱性等之觀點,係使用由具有熱硬化性或能量線硬化性之樹脂組成物所成的硬化性膜。將硬化性的保護膜形成用膜貼附於半導體晶圓、半導體晶片等之保護對象物後,藉由硬化而形成由其硬化物所成之保護膜。 例如,專利文獻1中揭示一種晶片保護用膜,其特徵係具有硬化後之鉛筆硬度為5H以上的硬化性保護膜形成層。 [先前技術文獻] [專利文獻] The protective film is formed using, for example, a protective film forming film. As a film for forming a protective film, a curable film made of a resin composition having thermosetting properties or energy ray curing properties is used from the viewpoint of mechanical strength, heat resistance, etc. After a curable protective film-forming film is attached to an object to be protected such as a semiconductor wafer or a semiconductor wafer, the protective film is formed by curing the film. For example, Patent Document 1 discloses a film for wafer protection, which is characterized by having a curable protective film-forming layer having a pencil hardness of 5H or more after curing. [Prior technical literature] [Patent Document]

專利文獻1:日本特開2009-147277號公報Patent Document 1: Japanese Patent Application Publication No. 2009-147277

[發明欲解決之課題][Problem to be solved by the invention]

順便提及,近年來,基於安全性提高之觀點,對於電子零件之難燃性要求程度一直在提高。作為用以提高塑膠製品的難燃性之難燃劑,過去以來係使用鹵素系難燃劑,但鹵素系難燃劑具有焚燒時會排放有毒物質之疑慮,而正在推動避免使用其的運動。 然而,根據本發明人等之研究,當使用鹵素系難燃劑之替代難燃劑實現保護膜形成用膜之難燃化時,得知由保護膜形成用膜形成之保護膜難以兼具難燃性與接著性。 By the way, in recent years, from the viewpoint of improving safety, the requirements for the flame retardancy of electronic parts have been increasing. As a flame retardant to improve the flame retardancy of plastic products, halogen-based flame retardants have been used in the past. However, halogen-based flame retardants are suspected of emitting toxic substances when burned, and there is a movement to avoid their use. However, according to the research of the present inventors, when the flame retardant of the protective film-forming film is made flame-retardant by using a substitute flame retardant of the halogen-based flame retardant, it was found that it is difficult to make the protective film formed of the protective film-forming film both difficult and difficult. Flammability and persistence.

本發明係鑑於上述問題而完成者,其目的在於提供可形成兼具難燃性及接著性之保護膜的保護膜形成用膜、使用該保護膜形成用膜之保護膜形成用複合片、附保護膜之半導體晶片及半導體裝置。 [用以解決課題之手段] The present invention was made in view of the above problems, and its object is to provide a protective film-forming film capable of forming a protective film having both flame retardancy and adhesiveness, a protective film-forming composite sheet using the protective film-forming film, and a protective film-forming composite sheet. Protective film for semiconductor wafers and semiconductor devices. [Means used to solve problems]

本發明人等著眼於保護膜形成用膜表面之磷原子存在比率及銅箔剝離強度,發現可解決上述課題,因而完成本發明。The present inventors paid attention to the phosphorus atom presence ratio and the copper foil peeling strength on the surface of the protective film-forming film, found that the above problems can be solved, and completed the present invention.

亦即,本發明有關下述[1]~[13]。 [1] 一種保護膜形成用膜,其具有硬化性, 將前述保護膜形成用膜之至少一表面藉由X射線光電子分光分析法進行分析,藉此檢驗出之相對於碳原子、氮原子、氧原子、磷原子及矽原子的總數之磷原子數的比率為0.4原子%以上, 前述保護膜形成用膜之硬化物之銅箔剝離強度為3.0N/10mm以上。 [2] 如上述[1]之保護膜形成用膜,其中前述磷原子數之比率為0.4原子%以上的表面之磷原子數的比率為5.0原子%以下。 [3] 如上述[1]或[2]之保護膜形成用膜,其中前述保護膜形成用膜之一表面中之前述磷原子數之比率[X]、與前述保護膜形成用膜之另一表面中之前述磷原子數之比率[Y]之比[X/Y]為0.7~1.4。 [4] 如上述[1]至[3]中任一項之保護膜形成用膜,其中前述保護膜形成用膜具有熱硬化性。 [5] 如上述[1]至[4]中任一項之保護膜形成用膜,其係使用含有(A)熱塑性樹脂與(B)熱硬化性樹脂之樹脂組成物而形成。 [6] 如上述[5]之保護膜形成用膜,其中前述(A)熱塑性樹脂為丙烯酸樹脂。 [7] 如上述[5]或[6]之保護膜形成用膜,其中前述(B)熱硬化性樹脂為環氧樹脂。 [8] 如上述[1]至[7]中任一項之保護膜形成用膜,其厚度為1~100 μm。 [9] 如上述[1]至[8]中任一項之保護膜形成用膜,其貼附於半導體晶圓之背面,使用於附保護膜之半導體晶片之製造。 [10] 一種保護膜形成用複合片,其具有:將如上述[1]至[9]中任一項之保護膜形成用膜夾持於2枚剝離膜而成的構成。 [11] 一種保護膜形成用複合片,其依序具有基材、黏著劑層、與如上述[1]至[9]中任一項之保護膜形成用膜。 [12] 一種附保護膜之半導體晶片,其具有作為如上述[1]至[9]中任一項之保護膜形成用膜的硬化物之保護膜。 [13] 一種半導體裝置,其具有如上述[12]之附保護膜之半導體晶片。 [發明效果] That is, the present invention relates to the following [1] to [13]. [1] A film for forming a protective film that has curability, At least one surface of the protective film-forming film is analyzed by X-ray photoelectron spectrometry to detect the number of phosphorus atoms relative to the total number of carbon atoms, nitrogen atoms, oxygen atoms, phosphorus atoms and silicon atoms. The ratio is 0.4 atomic % or more, The copper foil peeling strength of the cured product of the protective film forming film is 3.0 N/10mm or more. [2] The film for forming a protective film according to the above [1], wherein the ratio of the number of phosphorus atoms on the surface of which the ratio of the number of phosphorus atoms is 0.4 atomic % or more is 5.0 atomic % or less. [3] The protective film-forming film according to [1] or [2] above, wherein the ratio [X] of the number of phosphorus atoms in one surface of the protective film-forming film and the other of the protective film-forming film The ratio [X/Y] of the aforementioned ratio [Y] of the number of phosphorus atoms in a surface is 0.7~1.4. [4] The protective film-forming film according to any one of [1] to [3] above, wherein the protective film-forming film has thermosetting properties. [5] The film for forming a protective film according to any one of the above [1] to [4], which is formed using a resin composition containing (A) a thermoplastic resin and (B) a thermosetting resin. [6] The film for forming a protective film according to the above [5], wherein the thermoplastic resin (A) is an acrylic resin. [7] The film for forming a protective film according to the above [5] or [6], wherein the thermosetting resin (B) is an epoxy resin. [8] The film for forming a protective film according to any one of the above [1] to [7], with a thickness of 1 to 100 μm. [9] The film for forming a protective film according to any one of the above [1] to [8], which is attached to the back surface of a semiconductor wafer and used in the production of a semiconductor wafer with a protective film. [10] A composite sheet for protective film formation having a structure in which the film for protective film formation according to any one of the above [1] to [9] is sandwiched between two release films. [11] A composite sheet for forming a protective film, which has a base material, an adhesive layer, and a film for forming a protective film according to any one of the above [1] to [9] in this order. [12] A semiconductor wafer with a protective film having a protective film that is a cured product of the film for forming a protective film according to any one of [1] to [9] above. [13] A semiconductor device having a semiconductor wafer with a protective film as described in [12] above. [Effects of the invention]

依據本發明,可提供可形成兼具難燃性與接著性之保護膜的保護膜形成用膜、使用該保護膜形成用膜之保護膜形成用複合片、附保護膜之半導體晶片及半導體裝置。According to the present invention, it is possible to provide a protective film-forming film capable of forming a protective film having both flame retardancy and adhesiveness, a protective film-forming composite sheet using the protective film-forming film, a semiconductor wafer with a protective film, and a semiconductor device. .

本說明書中,數平均分子量(Mn)及質量平均分子量(Mw)係以凝膠滲透層析(GPC)法測定之標準聚苯乙烯換算的值,具體可為基於實施例中記載的方法測定之值。In this specification, the number average molecular weight (Mn) and the mass average molecular weight (Mw) are values converted to standard polystyrene measured by gel permeation chromatography (GPC). Specifically, they can be measured based on the method described in the Examples. value.

本說明書中,關於較佳之數值範圍(例如含量等之範圍),階段性地記載之下限值及上限值,可分別獨立組合。例如,基於「較佳10~90,更佳30~60」之記載,亦可組合「較佳之下限值(10)」與「更佳之上限值(60)」,而成為「10~60」。In this specification, the lower limit and the upper limit are described in stages regarding preferred numerical ranges (such as the range of content, etc.), which can be combined independently. For example, based on the description of "10~90 is better, 30~60 is better", "better lower limit value (10)" and "better upper limit value (60)" can also be combined to become "10~60" ”.

本說明書中所謂「能量線」係指電磁波或帶電粒子束中具有能量量子者。作為能量線之例舉例為紫外線、放射線、電子束等。紫外線可使用無極燈、高壓汞燈、金屬鹵素燈、氙氣燈、黑燈、LED燈等照射。電子束可照射利用電子束加速器等產生者。The so-called "energy lines" in this specification refer to electromagnetic waves or charged particle beams that contain energy quanta. Examples of energy rays include ultraviolet rays, radiation, electron beams, and the like. Ultraviolet rays can be irradiated using electrodeless lamps, high-pressure mercury lamps, metal halide lamps, xenon lamps, black lamps, LED lamps, etc. The electron beam can be irradiated using a generator such as an electron beam accelerator.

又本說明書中,所謂「能量線硬化性」意指藉由照射能量線而硬化之性質,所謂「非能量線硬化性」意指即使照射能量線亦不會硬化之性質,包含熱硬化性及非硬化性。所謂「熱硬化性」意指藉由加熱而硬化之性質,所謂「非硬化性」意指藉由加熱或能量線照射等亦不硬化之性質。In this specification, "energy ray curability" means a property that is hardened by irradiation with energy rays, and "non-energy ray curability" means a property that is not hardened even by irradiation with energy rays, and includes thermal curability and Non-hardening. "Thermosetting property" means the property of being hardened by heating, and "non-hardening property" means the property of not being hardened by heating or energy ray irradiation.

本說明書中,例如所謂「(甲基)丙烯酸」表示「丙烯酸」及「甲基丙烯酸」兩者,其他類似術語亦同樣。In this specification, for example, "(meth)acrylic acid" means both "acrylic acid" and "methacrylic acid", and the same applies to other similar terms.

本說明書中,所謂半導體晶圓及半導體晶片之「電路面」係指形成有電路之面,所謂半導體晶圓及半導體晶片之「背面」係指與電路面相反側之面。In this specification, the term "circuit surface" of a semiconductor wafer and a semiconductor wafer refers to the surface on which a circuit is formed, and the term "back surface" of a semiconductor wafer and a semiconductor wafer refers to the surface opposite to the circuit surface.

本說明書中,所謂某對象物的「厚度」意指該對象物全體之厚度,例如該對象物由複數層所成時,係指構成該對象物之所有層的合計厚度。此處所謂「對象物」意指後述之保護膜形成用膜、剝離膜、基材、黏合劑層等。 本說明書中之厚度係基於實施例中記載之方法測定的值。 In this specification, the "thickness" of a certain object means the thickness of the entire object. For example, when the object is composed of a plurality of layers, it means the total thickness of all the layers constituting the object. The "object" here means a film for forming a protective film, a release film, a base material, an adhesive layer, etc. which will be described later. The thickness in this specification is a value measured based on the method described in the Example.

本說明書中,所謂「固體成分」係指成為對象的組成物中所含之成分中的水或有機溶劑等之稀釋溶劑除外的成分。In this specification, "solid content" refers to components other than diluting solvents such as water and organic solvents among the components contained in the subject composition.

本說明書中記載之作用機制為推測,並非限制發揮本發明效果的機制。The mechanism of action described in this specification is speculation and does not limit the mechanism by which the effects of the present invention are exerted.

[保護膜形成用膜] 本實施形態之保護膜形成用膜係具有硬化性之保護膜形成用膜,將前述保護膜形成用膜之至少一表面藉由X射線光電子分光分析法進行分析,藉此檢驗出之相對於碳原子、氮原子、氧原子、磷原子及矽原子的總數之磷原子數的比率為0.4原子%以上,前述保護膜形成用膜之硬化物之銅箔剝離強度為3.0N/10mm以上。 [Film for protective film formation] The protective film-forming film of this embodiment is a curable protective film-forming film. At least one surface of the protective film-forming film is analyzed by X-ray photoelectron spectrometry to detect the relative carbon content of the protective film-forming film. The ratio of the number of phosphorus atoms to the total number of atoms, nitrogen atoms, oxygen atoms, phosphorus atoms and silicon atoms is 0.4 atomic % or more, and the copper foil peeling strength of the cured product of the protective film forming film is 3.0 N/10mm or more.

本實施形態之保護膜形成用膜係具有硬化性者,較佳具有熱硬化性或能量線硬化性者,更佳為具有熱硬化性者。此處,本說明書中所謂「保護膜形成用膜」係指硬化前者,而所謂「保護膜」係指使保護膜形成用膜硬化後者。The film system for forming a protective film of this embodiment has curability, preferably thermosetting property or energy ray curing property, and more preferably thermosetting property. Here, in this specification, the "film for protective film formation" refers to the former cured film, and the so-called "protective film" refers to the latter film cured.

又,形成上述銅箔剝離強度之測定對象的保護膜形成用膜之硬化物時之保護膜形成用膜的硬化條件,只要設為可使保護膜形成用膜中之硬化性成分的反應實質上完成之條件即可,只要對應於保護膜形成用膜之種類,例如後述之<保護膜形成用膜之硬化條件>中記載之條件或實施例中記載的條件等即可。In addition, the curing conditions of the protective film-forming film when forming the cured product of the protective film-forming film to be measured for the copper foil peeling strength should be set to allow the reaction of the curable components in the protective film-forming film to be substantially The conditions for completion may be sufficient as long as they correspond to the type of film for protective film formation, such as the conditions described in <Harding Conditions of Film for Protective Film Formation> described later or the conditions described in the Examples.

本實施形態之保護膜形成用膜藉由貼附於半導體晶圓、半導體晶片等之保護對象物上,隨後藉由硬化而成為對保護對象物予以保護免受外部衝擊等之保護膜。尤其,本實施形態之保護膜形成用膜就貼附於半導體晶片的背面而製造附保護膜之半導體晶片而言係有用。 由本實施形態之保護膜形成用膜形成的保護膜由於兼具難燃性與接著性,故設有由本實施形態之保護膜形成用膜形成的保護膜之保護對象物之安全性優異,並且所形成之保護膜對保護對象物之保護性優異。 The protective film-forming film of this embodiment is attached to an object to be protected such as a semiconductor wafer and a semiconductor wafer, and then hardened to form a protective film that protects the object to be protected from external impact and the like. In particular, the film for forming a protective film according to this embodiment is useful for being attached to the back surface of a semiconductor wafer to produce a semiconductor wafer with a protective film. Since the protective film formed of the protective film-forming film of this embodiment has both flame retardancy and adhesiveness, the object to be protected provided with the protective film formed of the protective film-forming film of this embodiment has excellent safety, and the object to be protected is excellent in safety. The protective film formed is excellent in protecting the object to be protected.

本實施形態之保護膜形成用膜可僅由1層而成,亦可由2層以上之複數層而成。本實施形態之保護膜形成用膜由複數層而成時,構成該複數層的各層可彼此相同亦相異。The film for forming a protective film in this embodiment may be composed of only one layer, or may be composed of a plurality of two or more layers. When the film for forming a protective film according to this embodiment is composed of a plurality of layers, the respective layers constituting the plurality of layers may be the same or different from each other.

<磷原子數之比率> 本實施形態之保護膜形成用膜之至少一表面藉由X射線光電子分光分析法進行分析,藉此檢驗出之相對於碳原子、氮原子、氧原子、磷原子及矽原子的總數之磷原子數的比率(以下亦稱為「磷原子比率」)為0.4原子%以上。 藉由磷原子比率為0.4原子%以上,由本實施形態之保護膜形成用膜所形成之保護膜的難燃性優異。 <Ratio of the number of phosphorus atoms> At least one surface of the protective film-forming film of this embodiment is analyzed by X-ray photoelectron spectroscopy, thereby detecting the number of phosphorus atoms relative to the total number of carbon atoms, nitrogen atoms, oxygen atoms, phosphorus atoms, and silicon atoms. The number ratio (hereinafter also referred to as "phosphorus atomic ratio") is 0.4 atomic % or more. When the phosphorus atomic ratio is 0.4 atomic % or more, the protective film formed of the protective film-forming film of this embodiment is excellent in flame retardancy.

本實施形態之保護膜形成用膜之至少一表面的磷原子比率只要為0.4原子%以上即可,但基於難燃性之觀點,較佳保護膜形成用膜之兩面的磷原子比率為0.4原子%以上。The phosphorus atom ratio on at least one surface of the protective film-forming film of this embodiment only needs to be 0.4 atomic % or more. However, from the viewpoint of flame retardancy, the phosphorus atom ratio on both surfaces of the protective film-forming film is preferably 0.4 atom. %above.

又,本實施形態之磷原子比率係藉由以下條件測定者,更具體測定方法之例如實施例中所記載。 [磷原子比率之測定方法] 針對測定對象的保護膜形成用膜之表面藉由以下條件進行X射線光電子分光分析(XPS分析),求出相對於碳原子、氮原子、氧原子、磷原子及矽原子之總數的磷原子數的比率。 (XPS分析裝置) X射線源:AlKα(1486.6eV) X射線束徑:100μm (分析條件) 電力值:25W 電壓:15kV 掠出角度:45度 真空度:5.0×10 -8Pa (分析元素峰) C:C1S N:C1s O:O1s Si:Si2p P:P2p In addition, the phosphorus atom ratio in this embodiment is measured under the following conditions, and more specific measurement methods are described in the Examples. [Measurement method of phosphorus atom ratio] X-ray photoelectron spectroscopy (XPS analysis) is performed on the surface of the protective film-forming film to be measured under the following conditions, and the ratio of carbon atoms, nitrogen atoms, oxygen atoms, phosphorus atoms, and The ratio of the total number of silicon atoms to the number of phosphorus atoms. (XPS analysis device) X-ray source: AlKα ( 1486.6eV ) ) C: C1S N: C1s O: O1s Si: Si2p P: P2p

基於與上述相同之觀點,上述磷原子比率為0.4原子%以上的表面的磷原子比率較佳為0.5原子%以上,更佳為0.6原子%以上。 又,基於保護膜之接著性之觀點,上述磷原子比率為0.4原子%以上的表面之磷原子比率之上限值較佳為5.0原子%以下,更佳為3.0原子%以下,又更佳為2.0原子%以下。 From the same viewpoint as above, the phosphorus atom ratio on the surface having a phosphorus atom ratio of 0.4 atomic % or more is preferably 0.5 atomic % or more, more preferably 0.6 atomic % or more. Furthermore, from the viewpoint of the adhesiveness of the protective film, the upper limit of the phosphorus atom ratio on the surface having a phosphorus atom ratio of 0.4 atomic % or more is preferably 5.0 atomic % or less, more preferably 3.0 atomic % or less, and still more preferably 2.0 atomic% or less.

本實施形態之保護膜形成用膜之一表面的磷原子比率[X]與另一表面的磷原子比率[Y]之比[X/Y]未特別限制,但基於保護膜之難燃性之觀點,較佳為0.7~1.4,更佳為0.8~1.3,又更佳為0.9~1.2。The ratio [X/Y] of the phosphorus atom ratio [X] on one surface of the protective film-forming film of the present embodiment to the phosphorus atom ratio [Y] on the other surface is not particularly limited, but is based on the flame retardancy of the protective film. From a viewpoint, the preferred range is 0.7~1.4, the preferred range is 0.8~1.3, and the preferred range is 0.9~1.2.

<銅箔剝離強度> 本實施形態之保護膜形成用膜之硬化物的銅箔剝離強度為3.0 N/10mm以上。 又,本實施形態之銅箔剝離強度係藉由以下測定方法測定,更具體之測定方法之例,如實施例所記載。 [銅箔剝離強度之測定方法] 於本實施形態之保護膜形成用膜之表面上,將長邊50mm×短邊10mm×厚度150μm之銅箔,以銅箔之長邊之一端部10mm不貼附於保護膜形成用膜而作為未貼附部予以留下同時使用層壓機進行貼附。其次,使保護膜形成用膜硬化,形成將矽晶圓、保護膜形成用膜之硬化物的保護膜及銅箔於該等之厚度方向積層而成之積層體,將其作為銅箔剝離強度之測定試料。將該測定試料安裝於拉伸試驗機上,以夾捏具把持上述銅箔之未貼附部,以剝下速度50mm/分鐘之條件沿90°方向剝下該銅箔,而取得銅箔剝離強度。 <Copper foil peeling strength> The copper foil peeling strength of the cured product of the protective film forming film of this embodiment is 3.0 N/10mm or more. In addition, the copper foil peeling strength of this embodiment was measured by the following measurement method, and more specific examples of the measurement method are as described in the Examples. [Measurement method of copper foil peel strength] On the surface of the protective film-forming film of this embodiment, a copper foil with a long side of 50 mm × a short side of 10 mm × a thickness of 150 μm is used as a protective film-forming film. Leave the unattached part and attach it using a laminator. Next, the protective film-forming film was cured to form a laminate in which the silicon wafer, the protective film of the cured product of the protective film-forming film, and the copper foil were laminated in the thickness direction, and this was used as the copper foil peeling strength. The measurement sample. The measurement sample was installed on a tensile testing machine, the unattached portion of the copper foil was held with a clamp, and the copper foil was peeled off in the 90° direction at a peeling speed of 50 mm/min to obtain copper foil peeling. intensity.

基於與上述同樣觀點,本實施形態之保護膜形成用膜之銅箔剝離強度較佳為4.0N/10mm以上,更佳為5.0N/10mm以上,又更佳為6.0N/10mm以上,再更佳為7.0N/10mm以上。 又,本實施形態之保護膜形成用膜之銅箔剝離強度的上限值越高越佳,但基於製造容易性之觀點,可為20N/10mm以下,可為15 N/10mm以下、可為10N/10mm以下。 Based on the same viewpoint as above, the copper foil peeling strength of the protective film forming film of this embodiment is preferably 4.0N/10mm or more, more preferably 5.0N/10mm or more, still more preferably 6.0N/10mm or more, and more preferably The best is 7.0N/10mm or more. In addition, the upper limit of the copper foil peeling strength of the protective film forming film of this embodiment is preferably as high as possible. However, from the viewpoint of ease of production, it may be 20 N/10mm or less, may be 15 N/10mm or less, or may be Below 10N/10mm.

其次,針對本實施形態之保護膜形成用膜之形成所用的材料加以說明。 本實施形態之保護膜形成用膜較佳係使用含有(A)熱塑性樹脂及(B)熱硬化性樹脂之樹脂組成物形成。 又以下之說明中,用於形成本實施形態之保護膜形成用膜的樹脂組成物有時稱為「保護膜形成用樹脂組成物」。 Next, materials used for forming the protective film-forming film of this embodiment will be described. The protective film forming film of this embodiment is preferably formed using a resin composition containing (A) a thermoplastic resin and (B) a thermosetting resin. In the following description, the resin composition used to form the protective film-forming film of this embodiment may be referred to as the "protective film-forming resin composition."

[保護膜形成用樹脂組成物] 保護膜形成用樹脂組成物係含有(A)熱塑性樹脂及(B)熱硬化性樹脂之樹脂組成物。 以下,針對保護膜形成用樹脂組成物所含之各成分詳細說明。 [Resin composition for protective film formation] The resin composition for forming a protective film is a resin composition containing (A) a thermoplastic resin and (B) a thermosetting resin. Each component contained in the resin composition for forming a protective film will be described in detail below.

<(A)熱塑性樹脂> 藉由保護膜形成用樹脂組成物含有(A)熱塑性樹脂,而使本實施形態之保護膜形成用膜成為硬化前之柔軟性、對保護對象物之接著性優異者。 (A)熱塑性樹脂可單獨使用1種,亦可併用2種以上。 <(A) Thermoplastic resin> Since the resin composition for protective film formation contains (A) the thermoplastic resin, the film for protective film formation of this embodiment has flexibility before hardening and has excellent adhesion to the object to be protected. (A) Thermoplastic resin may be used individually by 1 type, and may be used in combination of 2 or more types.

作為(A)熱塑性樹脂舉例為例如丙烯酸樹脂、胺基甲酸酯樹脂、苯氧樹脂、矽氧樹脂、飽和聚酯樹脂、聚丁烯樹脂、聚丁二烯樹脂、聚苯乙烯樹脂等。該等中,較佳為丙烯酸樹脂。Examples of (A) the thermoplastic resin include acrylic resin, urethane resin, phenoxy resin, silicone resin, saturated polyester resin, polybutylene resin, polybutadiene resin, polystyrene resin, and the like. Among these, acrylic resin is preferred.

丙烯酸樹脂之原料單體較佳含有(甲基)丙烯酸酯。 作為丙烯酸樹脂之原料單體,可單獨使用1種,亦可併用2種以上。 The raw material monomer of the acrylic resin preferably contains (meth)acrylate. As the raw material monomer of the acrylic resin, one type may be used alone, or two or more types may be used in combination.

作為(甲基)丙烯酸酯舉例為例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷酯、(甲基)丙烯酸十二烷酯、(甲基)丙烯酸十三烷酯、(甲基)丙烯酸十四烷酯、(甲基)丙烯酸十五烷酯、(甲基)丙烯酸十六烷酯、(甲基)丙烯酸十七烷酯、(甲基)丙烯酸酯十八烷酯等之(甲基)丙烯酸烷酯;(甲基)丙烯酸環己酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊酯等之(甲基)丙烯酸環烷酯;(甲基)丙烯酸苄酯等之(甲基)丙烯酸芳烷酯;(甲基)丙烯酸二環戊烯酯等之(甲基)丙烯酸環烯酯;(甲基)丙烯酸二環戊烯氧基乙酯等之(甲基)丙烯酸環烯氧基烷酯;醯亞胺(甲基)丙烯酸酯;(甲基)丙烯酸縮水甘油酯等之含縮水甘油基之(甲基)丙烯酸酯;(甲基)丙烯酸羥基甲酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等之含羥基之(甲基)丙烯酸酯;(甲基)丙烯酸N-甲胺基乙酯等之含取代胺基之(甲基)丙烯酸酯;等。Examples of (meth)acrylate include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, and amyl (meth)acrylate. Hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, octyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate Ester, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, myristyl (meth)acrylate, pentadecyl (meth)acrylate Alkyl (meth)acrylate, cetyl (meth)acrylate, heptadecanyl (meth)acrylate, stearyl (meth)acrylate, etc.; cyclohexyl (meth)acrylate , (meth)acrylic acid cycloalkyl esters such as isobornyl (meth)acrylate and (meth)acrylic acid dicyclopentyl ester; (meth)acrylic acid aralkyl esters such as (meth)benzyl acrylate; (meth)acrylic acid aralkyl esters (meth)acrylic acid cycloalkenyl esters such as dicyclopentenyl acrylate; (meth)acrylic acid cycloalkenyloxyalkyl esters such as dicyclopentenyloxyethyl acrylate; acyl imine ( Meth)acrylate; (meth)acrylate containing glycidyl group such as glycidyl (meth)acrylate; (meth)acrylate hydroxymethyl ester, (meth)acrylate 2-hydroxyethyl acrylate, (meth)acrylate 2-hydroxypropyl acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxy(meth)acrylate (meth)acrylates containing hydroxyl groups such as butyl ester; (meth)acrylates containing substituted amine groups such as N-methylaminoethyl (meth)acrylate; etc.

該等中,丙烯酸樹脂之原料單體較佳含有(甲基)丙烯酸烷酯。 構成(甲基)丙烯酸烷酯之烷酯的烷基之碳數未特別限制,但較佳為1~18,更佳為1~10,又更佳為1~4。 構成(甲基)丙烯酸烷酯之烷酯的烷基有根據具有游離原子價之碳位置而可為正-、第二-、第三-或異-之形態之情況,任一形態均可。 丙烯酸樹脂之原料單體中之(甲基)丙烯酸烷酯之含量未特別限制,但相對於丙烯酸樹脂之原料單體(100質量%),較佳為50~97質量%,更佳為60~93質量%,又更佳為70~90質量%。 Among these, the raw material monomer of the acrylic resin preferably contains alkyl (meth)acrylate. The number of carbon atoms in the alkyl group constituting the alkyl ester of (meth)acrylic acid alkyl ester is not particularly limited, but is preferably 1 to 18, more preferably 1 to 10, and still more preferably 1 to 4. The alkyl group constituting the alkyl ester of (meth)acrylic acid alkyl ester may be in the form of n-, 2-, 3-, or iso-, depending on the position of the carbon having a free valence, and any form may be used. The content of alkyl (meth)acrylate in the raw material monomers of the acrylic resin is not particularly limited, but relative to the raw material monomers of the acrylic resin (100 mass %), it is preferably 50 to 97 mass %, and more preferably 60 to 60 mass %. 93% by mass, more preferably 70~90% by mass.

丙烯酸樹脂之原料單體較佳與(甲基)丙烯酸烷酯一起含有含羥基之(甲基)丙烯酸酯。 丙烯酸樹脂之原料單體中含有含羥基之(甲基)丙烯酸酯時,丙烯酸樹脂原料單體中之含羥基(甲基)丙烯酸酯之含量未特別限制,但相對於丙烯酸樹脂之原料單體(100質量%),較佳為2~50質量%,更佳為6~40質量%,又更佳為10~30質量%。 The raw material monomer of the acrylic resin preferably contains a hydroxyl-containing (meth)acrylate together with an alkyl (meth)acrylate. When the raw material monomers of acrylic resin contain hydroxyl-containing (meth)acrylate, the content of hydroxyl-containing (meth)acrylate in the raw material monomers of acrylic resin is not particularly limited, but compared to the raw material monomers of acrylic resin ( 100 mass%), preferably 2 to 50 mass%, more preferably 6 to 40 mass%, and still more preferably 10 to 30 mass%.

丙烯酸樹脂之原料單體亦可含有(甲基)丙烯酸酯以外的單體,亦可不含。 作為(甲基)丙烯酸酯以外的單體舉例為例如(甲基)丙烯酸、衣康酸、乙酸乙烯酯、丙烯腈、丙烯醯基嗎啉、苯乙烯、丙烯醯胺、N-羥甲基丙烯醯胺等。 The raw material monomers of acrylic resin may or may not contain monomers other than (meth)acrylate. Examples of monomers other than (meth)acrylate include (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, acrylomorpholine, styrene, acrylamide, and N-methylolpropylene. Amide etc.

(A)熱塑性樹脂之質量平均分子量(Mw)未特別限制,但較佳為10,000~2,000,000,更佳為100,000~ 1,500,000,又更佳為150,000~ 1,000,000。 (A)熱塑性樹脂之質量平均分子量(Mw)為上述下限值以上時,有保護膜形成用膜的形狀穩定性更良好之傾向。又,(A)熱塑性樹脂之質量平均分子量(Mw)為上述上限值以下時,有保護膜形成用膜容易追隨保護對象物之凹凸面,更可抑制保護對象物與保護膜形成用膜之間之空隙等發生的傾向。 (A) The mass average molecular weight (Mw) of the thermoplastic resin is not particularly limited, but is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000, still more preferably 150,000 to 1,000,000. (A) When the mass average molecular weight (Mw) of the thermoplastic resin is more than the above lower limit, the shape stability of the protective film forming film tends to be better. In addition, (A) when the mass average molecular weight (Mw) of the thermoplastic resin is less than the above upper limit, the protective film-forming film can easily follow the uneven surface of the object to be protected, and the contact between the object to be protected and the protective film-forming film can be suppressed. The tendency for gaps, etc. to occur.

(A)熱塑性樹脂之玻璃轉移溫度(Tg)(以下亦簡稱「Tg」)未特別限制,但較佳為-60~70℃,更佳為-30 ~50℃,又更佳為-10~20℃。 (A)熱塑性樹脂之Tg為上述下限值以上時,有保護膜形成用膜之凝集力更良好之傾向。又,(A)熱塑性樹脂之Tg為上述上限值以下時,有保護膜形成用膜之柔軟性及接著性提高之傾向。 (A) The glass transition temperature (Tg) of the thermoplastic resin (hereinafter also referred to as "Tg") is not particularly limited, but is preferably -60~70°C, more preferably -30~50°C, and more preferably -10~ 20℃. (A) When the Tg of the thermoplastic resin is equal to or higher than the above-mentioned lower limit, the cohesion of the film for forming a protective film tends to be better. Furthermore, when the Tg of (A) the thermoplastic resin is less than the above-mentioned upper limit, the flexibility and adhesiveness of the protective film-forming film tend to be improved.

例如,丙烯酸樹脂之Tg可使用以下所示之Fox式計算而求出。 (式中,Tg為丙烯酸樹脂之玻璃轉移溫度,Tg1、Tg2,...Tgm為成為丙烯酸樹脂之原料的各單體之均聚物的玻璃轉移溫度,W1、W2、...Wm係各單體的質量分率。但,W1+W2+...+Wm=1)。 上述Fox式中各單體之均聚物的玻璃轉移溫度,可使用高分子數據手冊,黏著手冊或聚合物手冊中記載之值。例如,丙烯酸甲酯均聚物之Tg為10℃,丙烯酸2-羥基乙酯均聚物之Tg為-15℃,丙烯酸2-乙基己酯之Tg為-70℃,甲基丙烯酸2-乙基己酯之Tg為-10℃。 又,Tg可根據JIS K 7121(2012)求出。 For example, the Tg of an acrylic resin can be calculated using the Fox formula shown below. (In the formula, Tg is the glass transition temperature of acrylic resin, Tg1, Tg2,...Tgm are the glass transition temperatures of the homopolymers of each monomer that becomes the raw material of acrylic resin, W1, W2,...Wm are the The mass fraction of the monomer. However, W1+W2+...+Wm=1). For the glass transition temperature of the homopolymer of each monomer in the Fox formula above, the value recorded in the polymer data manual, adhesive manual or polymer manual can be used. For example, the Tg of methyl acrylate homopolymer is 10°C, the Tg of 2-hydroxyethyl acrylate homopolymer is -15°C, the Tg of 2-ethylhexyl acrylate is -70°C, and the Tg of 2-ethyl methacrylate is -70°C. The Tg of hydroxyhexyl ester is -10°C. In addition, Tg can be determined based on JIS K 7121 (2012).

(A)熱塑性樹脂可具有官能基。作為該官能基舉例為例如乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等。 (A)熱塑性樹脂具有官能基時,該官能基例如可經由後述之(H)交聯劑與其他化合物鍵結,亦可不經由(H)交聯劑直接與其他化合物鍵結。(A)熱塑性樹脂利用官能基藉由經由(H)交聯劑或直接與其他化合物鍵結,有使保護膜之信賴性更良好之傾向。 作為具有官能基之(A)熱塑性樹脂,較佳為具有官能基之丙烯酸樹脂,更佳為具有羥基作為官能基之丙烯酸樹脂。 (A) The thermoplastic resin may have functional groups. Examples of the functional group include a vinyl group, a (meth)acrylyl group, an amine group, a hydroxyl group, a carboxyl group, an isocyanate group, and the like. (A) When the thermoplastic resin has a functional group, the functional group may be bonded to other compounds via the (H) cross-linking agent described below, or may be directly bonded to other compounds without the (H) cross-linking agent. (A) Thermoplastic resins use functional groups to bond with other compounds through (H) cross-linking agents or directly, thereby tending to improve the reliability of the protective film. As the (A) thermoplastic resin having a functional group, an acrylic resin having a functional group is preferred, and an acrylic resin having a hydroxyl group as a functional group is more preferred.

保護膜形成用樹脂組成物中之(A)熱塑性樹脂之含量未特別限制,但相對於保護膜形成用樹脂組成物之固體成分(100質量%),較佳為5~80質量%,更佳為7~50質量%,又更佳為10~30質量%。 (A)熱塑性樹脂之含量為上述下限值以上時,有保護膜形成用膜之硬化前的柔軟性及對保護對象物之接著性更良好之傾向。且,(A)熱塑性樹脂之含量為上述上限值以下時,有保護膜之難燃性、機械強度及耐熱性更良好之傾向。 The content of (A) thermoplastic resin in the protective film-forming resin composition is not particularly limited, but relative to the solid content (100 mass%) of the protective film-forming resin composition, it is preferably 5 to 80 mass%, more preferably The content is 7 to 50% by mass, and more preferably 10 to 30% by mass. (A) When the content of the thermoplastic resin is more than the above-mentioned lower limit, the flexibility of the protective film-forming film before curing and the adhesion to the object to be protected tend to be better. Furthermore, when the content of (A) the thermoplastic resin is less than the above-mentioned upper limit, the protective film tends to have better flame retardancy, mechanical strength and heat resistance.

<(B)熱硬化性樹脂> 藉由使保護膜形成用樹脂組成物含有(B)熱硬化性樹脂,本實施形態之保護膜形成用膜成為具有熱硬化性者,可形成機械強度、耐熱性等優異之保護膜。 (B)熱硬化性樹脂可單獨使用1種,亦可併用2種以上。 <(B)Thermosetting resin> By making the resin composition for protective film formation contain (B) thermosetting resin, the film for protective film formation of this embodiment becomes thermosetting, and a protective film excellent in mechanical strength, heat resistance, etc. can be formed. (B) Thermosetting resin may be used individually by 1 type, or may be used in combination of 2 or more types.

作為(B)熱硬化性樹脂舉例為例如環氧樹脂、酚樹脂、三聚氰胺樹脂、脲樹脂、熱硬化性聚醯亞胺樹脂等。該等中,較佳為環氧樹脂。 作為環氧樹脂,較佳為1分子中具有2個以上環氧基之環氧樹脂。 作為環氧樹脂可舉例習知者,舉例為例如雙酚A型環氧樹脂、雙酚F型環氧樹脂等之雙酚型環氧樹脂及其氫化物;酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂等之酚醛清漆型環氧樹脂;酚芳烷基型環氧樹脂等之芳烷基型環氧樹脂;二環戊二烯型環氧樹脂;聯苯型環氧樹脂;萘型環氧樹脂;等。 該等中,基於保護膜形成用膜之處理性、耐熱性等之觀點,較佳為二環戊二烯型環氧樹脂、雙酚型環氧樹脂、萘型環氧樹脂。 Examples of the (B) thermosetting resin include epoxy resin, phenol resin, melamine resin, urea resin, thermosetting polyimide resin, and the like. Among these, epoxy resin is preferred. As the epoxy resin, an epoxy resin having two or more epoxy groups per molecule is preferred. Examples of the epoxy resin include those known in the art, such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, and their hydrogenated products; phenolic novolak type epoxy resin, formaldehyde epoxy resin, etc. Phenol novolak type epoxy resin, o-cresol novolak type epoxy resin, novolac type epoxy resin, etc.; phenol aralkyl type epoxy resin, etc. aralkyl type epoxy resin; dicyclopentadiene type Epoxy resin; biphenyl-type epoxy resin; naphthalene-type epoxy resin; etc. Among these, dicyclopentadiene-type epoxy resin, bisphenol-type epoxy resin, and naphthalene-type epoxy resin are preferable from the viewpoint of film properties, heat resistance, etc. for forming a protective film.

環氧樹脂之數平均分子量(Mn)未特別限制,但基於保護膜形成用膜之硬化性及保護膜之機械強度與耐熱性之觀點,較佳為200~30,000,更佳為250~10,000,又更佳為300~3,000。The number average molecular weight (Mn) of the epoxy resin is not particularly limited, but from the viewpoint of the curability of the protective film forming film and the mechanical strength and heat resistance of the protective film, it is preferably 200 to 30,000, more preferably 250 to 10,000. Even better, it is 300~3,000.

環氧樹脂之環氧當量未特別限制,但基於保護膜形成用膜之硬化性及保護膜之機械強度與耐熱性之觀點,較佳為100~1,500g/eq,更佳為130~1,200g/eq,更佳為160~1,000g/eq。 又,本說明書中,所謂「環氧當量」係指含有1克當量之環氧基的環氧樹脂之克數(g/eq),且可根據JIS K 7236:2001測定。 The epoxy equivalent of the epoxy resin is not particularly limited, but from the viewpoint of the hardening properties of the protective film-forming film and the mechanical strength and heat resistance of the protective film, 100 to 1,500 g/eq is preferred, and 130 to 1,200 g is more preferred. /eq, preferably 160~1,000g/eq. In addition, in this specification, "epoxy equivalent" means the number of grams (g/eq) of the epoxy resin containing 1 gram equivalent of an epoxy group, and can be measured in accordance with JIS K 7236:2001.

保護膜形成用樹脂組成物中環氧樹脂之含量未特別限制,但相對於保護膜形成用樹脂組成物之固體成分(100質量%),較佳為2~60質量%,更佳為4~40質量%,又更佳為7~20質量%。 環氧樹脂含量為上述下限值以上時,有保護膜形成用膜之硬化性及保護膜之機械強度與耐熱性更良好之傾向。又,環氧樹脂之含量為上述上限值以下時,有保護膜形成用膜之硬化前的柔軟性更良好之傾向。 The content of the epoxy resin in the protective film-forming resin composition is not particularly limited, but relative to the solid content (100 mass%) of the protective film-forming resin composition, it is preferably 2 to 60 mass %, and more preferably 4 to 60 mass %. 40 mass%, more preferably 7 to 20 mass%. When the epoxy resin content is more than the above lower limit, the curability of the protective film forming film and the mechanical strength and heat resistance of the protective film tend to be better. In addition, when the content of the epoxy resin is less than the above-mentioned upper limit, the flexibility of the protective film-forming film before curing tends to be better.

保護膜形成用樹脂組成物中(B)熱硬化性樹脂之含量未特別限制,但相對於保護膜形成用樹脂組成物之固體成分(100質量%),較佳為2~60質量%,更佳為4~40質量%,又更佳為7~20質量%。 (B)熱硬化性樹脂含量為上述下限值以上時,有保護膜形成用膜之硬化性及保護膜之機械強度與耐熱性更良好之傾向。又,(B)熱硬化性樹脂之含量為上述上限值以下時,有保護膜形成用膜之硬化前的柔軟性更良好之傾向。 The content of (B) thermosetting resin in the protective film-forming resin composition is not particularly limited, but is preferably 2 to 60 mass%, more preferably 2 to 60 mass% relative to the solid content (100 mass%) of the protective film-forming resin composition. Preferably, it is 4-40 mass %, and more preferably, it is 7-20 mass %. (B) When the thermosetting resin content is more than the above-mentioned lower limit, the curability of the protective film-forming film and the mechanical strength and heat resistance of the protective film tend to be better. Moreover, when the content of (B) the thermosetting resin is less than the above-mentioned upper limit, the flexibility of the film for protective film formation before curing tends to be better.

<(C)無機填充材> 保護膜形成用樹脂組成物較佳進而含有(C)無機填充材。 藉由使保護膜形成用樹脂組成物含有(C)無機填充材,本實施形態之保護膜形成用膜成為形狀維持性優異者,且由本實施形態之保護膜形成用膜形成的保護膜成為難燃性、低熱膨脹性、低吸濕性等優異者。 (C)無機填充材可單獨使用1種,亦可併用2種以上。 <(C) Inorganic filler> The resin composition for protective film formation preferably further contains (C) an inorganic filler. By containing the (C) inorganic filler in the protective film-forming resin composition, the protective film-forming film of the present embodiment has excellent shape maintainability, and the protective film formed from the protective film-forming film of the present embodiment becomes difficult to form. Excellent in flammability, low thermal expansion, low moisture absorption, etc. (C) Inorganic filler may be used individually by 1 type, or may be used in combination of 2 or more types.

作為(C)無機填充材可舉例為例如氧化矽、滑石、碳酸鈣、鈦白、氧化鐵紅、碳化矽等。該等中,較佳為氧化矽、氧化鋁,更佳為氧化矽。 (C)無機填充材之形狀未特別限制,可為例如球狀、破碎狀、纖維狀等,但較佳為球狀。 (C)無機填充材可藉由表面處理劑等實施表面改質者。作為表面處理劑,可使用後述之(I)偶合劑。 Examples of the (C) inorganic filler include silicon oxide, talc, calcium carbonate, titanium white, iron oxide red, silicon carbide, and the like. Among these, silicon oxide and aluminum oxide are preferred, and silicon oxide is more preferred. (C) The shape of the inorganic filler is not particularly limited and may be, for example, spherical, crushed, fibrous, etc., but is preferably spherical. (C) Inorganic fillers whose surface can be modified by surface treatment agents, etc. As the surface treatment agent, the coupling agent (I) described below can be used.

(C)無機填充材之平均粒徑(D 50)未特別限制,但較佳為0.1~ 10μm,更佳為0.2~5μm,又更佳為0.3~ 1μm。 (C)無機填充材之平均粒徑(D 50)可使用Multisizer 3機(Beckman Coulter公司製)等藉由Coulter計數法進行粒度分佈之測定而求出。 (C) The average particle size (D 50 ) of the inorganic filler is not particularly limited, but is preferably 0.1~10 μm, more preferably 0.2~5 μm, and still more preferably 0.3~1 μm. (C) The average particle diameter (D 50 ) of the inorganic filler can be determined by measuring the particle size distribution by the Coulter counting method using a Multisizer 3 machine (manufactured by Beckman Coulter Co., Ltd.) or the like.

保護膜形成用樹脂組成物中之(C)無機填充材含量未特別限制,但相對於保護膜形成用樹脂組成物之固體成分(100質量%),較佳為50質量%以上,更佳為53質量%以上,又更佳為55質量%以上,且較佳為90質量%以下,更佳為85質量%以下,又更佳為80質量%以下。 (C)無機填充材之含量為上述下限值以上時,有保護膜形狀用膜之形狀維持性、保護膜之難燃性、低熱膨脹性及低吸濕性更良好之傾向。又,(C)無機填充材之含量為上述上限值以下時,有保護膜形成用膜之硬化前的柔軟性更良好之傾向。 The content of (C) inorganic filler in the protective film-forming resin composition is not particularly limited, but it is preferably 50 mass % or more, more preferably 50 mass % or more based on the solid content (100 mass %) of the protective film-forming resin composition. 53 mass % or more, more preferably 55 mass % or more, and more preferably 90 mass % or less, more preferably 85 mass % or less, further preferably 80 mass % or less. (C) When the content of the inorganic filler is more than the above-mentioned lower limit, the shape maintainability of the protective film shape film, the flame retardancy, low thermal expansion and low hygroscopicity of the protective film tend to be better. Moreover, when the content of (C) the inorganic filler is less than the above-mentioned upper limit, the flexibility of the protective film-forming film before curing tends to be better.

<(D)難燃劑> 保護膜形成用樹脂組成物較佳進而含有(D)難燃劑。 藉由保護膜形成用樹脂組成物含有難燃劑(D),由本實施形態之保護膜形成用膜所形成之保護膜之難燃性優異。 (D)難燃劑可單獨使用1種,亦可併用2種以上。 <(D)Flame retardant> The resin composition for protective film formation preferably further contains (D) a flame retardant. Since the resin composition for protective film formation contains the flame retardant (D), the protective film formed from the film for protective film formation of this embodiment is excellent in flame retardancy. (D) One type of flame retardant may be used alone, or two or more types may be used in combination.

作為(D)難燃劑舉例為例如鹵素系化合物、包含磷原子之化合物、包含氮原子之化合物、包含磷原子及氮原子之化合物以及該等以外之無機系難燃劑等。該等中,基於保護膜之難燃性及接著性之觀點,較佳為包含磷原子及氮原子之化合物。以下,將包含磷原子及氮原子之化合物稱為「(D1)包含磷原子及氮原子之化合物」。Examples of the (D) flame retardant include halogen compounds, compounds containing phosphorus atoms, compounds containing nitrogen atoms, compounds containing phosphorus atoms and nitrogen atoms, and inorganic flame retardants other than these. Among these, a compound containing a phosphorus atom and a nitrogen atom is preferred from the viewpoint of flame retardancy and adhesiveness of the protective film. Hereinafter, the compound containing a phosphorus atom and a nitrogen atom will be referred to as "(D1) a compound containing a phosphorus atom and a nitrogen atom."

((D1)包含磷原子及氮原子之化合物) 藉由保護膜形成用樹脂組成物含有(D1)包含磷原子及氮原子之化合物,有可形成兼具難燃性與接著性更良好的保護膜之傾向。 其理由尚不確定,但推測一原因係(D1)成分中所含之磷原子及氮原子有助於難燃性,且由於該化合物與(A)熱塑性樹脂、(B)熱硬化性樹脂等之相溶性高,故於保護膜形成用膜中作用如可塑劑,而成為提高保護膜形成用膜對於保護對象物之密著性。 (D1)包含磷原子及氮原子的化合物可單獨使用1種,亦可併用2種以上。 ((D1) Compounds containing phosphorus atoms and nitrogen atoms) When the resin composition for forming a protective film contains (D1) a compound containing a phosphorus atom and a nitrogen atom, a protective film that has both flame retardancy and better adhesion tends to be formed. The reason for this is not yet certain, but one reason is that the phosphorus atoms and nitrogen atoms contained in the component (D1) contribute to the flame retardancy, and this compound interacts with (A) thermoplastic resin, (B) thermosetting resin, etc. Because of its high compatibility, it acts as a plasticizer in the protective film-forming film to improve the adhesion of the protective film-forming film to the object to be protected. (D1) The compound containing a phosphorus atom and a nitrogen atom may be used individually by 1 type, or may be used in combination of 2 or more types.

(D1)包含磷原子及氮原子之化合物1分子中具有之磷原子數未特別限制,但較佳為1~20個,更佳為2~10個,又更佳為3~5個,特佳為3個或4個。 (D1)包含磷原子及氮原子之化合物1分子中具有之氮原子數未特別限制,但較佳為1~20個,更佳為2~10個,又更佳為3~5個,特佳為3個或4個。 (D1)包含磷原子及氮原子之化合物中之磷原子及氮原子數若為上述範圍,則有可形成兼具難燃性與接著性更良好的保護膜之傾向。 (D1) The number of phosphorus atoms in one molecule of the compound containing phosphorus atoms and nitrogen atoms is not particularly limited, but it is preferably 1 to 20, more preferably 2 to 10, still more preferably 3 to 5, especially The best number is 3 or 4. (D1) The number of nitrogen atoms in one molecule of a compound containing a phosphorus atom and a nitrogen atom is not particularly limited, but is preferably 1 to 20, more preferably 2 to 10, even more preferably 3 to 5, especially The best number is 3 or 4. (D1) If the number of phosphorus atoms and nitrogen atoms in the compound containing phosphorus atoms and nitrogen atoms is within the above range, a protective film with better both flame retardancy and adhesion tends to be formed.

(D1)包含磷原子及氮原子之化合物中磷原子之含量未特別限制,但相對於(D1)包含磷原子及氮原子之化合物(100質量%),較佳為5~30質量%,更佳為7~20質量%,又更佳為10~15質量%。 (D1)包含磷原子及氮原子之化合物中氮原子之含量未特別限制,但相對於(D1)包含磷原子及氮原子之化合物(100質量%),較佳為1~20質量%,更佳為2~15質量%,又更佳為4~10質量%。 (D1)包含磷原子及氮原子之化合物中磷原子及氮原子之含量若為上述範圍,則有可形成兼具難燃性與接著性更良好的保護膜之傾向。 (D1) The content of phosphorus atoms in the compound containing phosphorus atoms and nitrogen atoms is not particularly limited, but relative to (D1) the compound containing phosphorus atoms and nitrogen atoms (100 mass%), it is preferably 5 to 30 mass%, more preferably Preferably, it is 7-20 mass %, and more preferably, it is 10-15 mass %. (D1) The content of nitrogen atoms in the compound containing phosphorus atoms and nitrogen atoms is not particularly limited, but relative to (D1) the compound containing phosphorus atoms and nitrogen atoms (100 mass%), it is preferably 1 to 20 mass%, more preferably Preferably, it is 2-15 mass %, and more preferably, it is 4-10 mass %. (D1) If the content of the phosphorus atom and the nitrogen atom in the compound containing the phosphorus atom and the nitrogen atom is within the above range, a protective film that has both flame retardancy and better adhesion tends to be formed.

(D1)包含磷原子及氮原子之化合物,基於更提高保護膜之難燃性之觀點,較佳為包含磷原子與氮原子之鍵結的化合物。(D1) The compound containing a phosphorus atom and a nitrogen atom is preferably a compound containing a bond between a phosphorus atom and a nitrogen atom from the viewpoint of further improving the flame retardancy of the protective film.

包含磷原子與氮原子之鍵結的化合物,基於形成兼具難燃性與接著性更良好的保護膜之觀點,較佳係包含磷原子與氮原子之鍵結的有機化合物,更佳為包含下述通式(D-1)所示之構造的化合物。The compound containing a bond between a phosphorus atom and a nitrogen atom is preferably an organic compound containing a bond between a phosphorus atom and a nitrogen atom, and more preferably a compound containing a bond between a phosphorus atom and a nitrogen atom, from the viewpoint of forming a protective film that is both flame retardant and has better adhesion. A compound having a structure represented by the following general formula (D-1).

(式中,R 1表示取代或未取代之脂肪族烴基、或取代或未取代之芳香族烴基,複數的R 1可彼此相同,亦可相異,n表示3~20之整數,-* 1及-* 2表示與其他原子之鍵結鍵,鍵結鍵-* 1與鍵結鍵-* 2可相互連結形成環狀構造)。 (In the formula, R 1 represents a substituted or unsubstituted aliphatic hydrocarbon group, or a substituted or unsubstituted aromatic hydrocarbon group. The plural R 1s may be the same as each other or different, n represents an integer from 3 to 20, -* 1 And -* 2 represents the bond with other atoms. Bond-* 1 and bond-* 2 can be connected to each other to form a ring structure).

作為上述通式(D-1)中R 1所示之取代或未取代之脂肪族烴基,舉例為例如取代或未取代之烷基、取代或未取代之烯基、取代或未取代之炔基等。該等脂肪族烴基可為直鏈狀或分支鏈狀之任一者。 取代或未取代之脂肪族烴基之碳數未特別限制,但較佳為1~10,更佳為2~8,又更佳為3~5。又脂肪族烴基具有取代基時,該碳數不包含取代基之碳數。 作為脂肪族烴基可具有之取代基舉例為例如鹵原子、羥基、羧基、烷氧基、氰基、芳香族烴基等。作為取代基之芳香族烴基舉例為與後述之R 1所示之芳香族烴基相同者。 Examples of the substituted or unsubstituted aliphatic hydrocarbon group represented by R 1 in the above general formula (D-1) include a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, and a substituted or unsubstituted alkynyl group. wait. These aliphatic hydrocarbon groups may be either linear or branched. The carbon number of the substituted or unsubstituted aliphatic hydrocarbon group is not particularly limited, but is preferably 1 to 10, more preferably 2 to 8, and still more preferably 3 to 5. When the aliphatic hydrocarbon group has a substituent, the carbon number does not include the carbon number of the substituent. Examples of substituents that the aliphatic hydrocarbon group may have include a halogen atom, a hydroxyl group, a carboxyl group, an alkoxy group, a cyano group, an aromatic hydrocarbon group, and the like. Examples of the aromatic hydrocarbon group as the substituent are the same as the aromatic hydrocarbon group represented by R 1 described below.

作為取代或未取代之芳香族烴基舉例為例如取代或未取代之苯基、取代或未取代之萘基等。 取代或未取代之芳香族烴基之碳數未特別限制,但較佳為6~12,更佳為6~8。又芳香族烴基具有取代基時,該碳數不包含取代基之碳數。 作為芳香族烴基可具有之取代基舉例為例如鹵原子、羥基、羧基、烷氧基、氰基、脂肪族烴基等。作為取代基之脂肪族烴基舉例為與上述R 1所示之脂肪族烴基相同者。 Examples of the substituted or unsubstituted aromatic hydrocarbon group include a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, and the like. The carbon number of the substituted or unsubstituted aromatic hydrocarbon group is not particularly limited, but is preferably 6 to 12, more preferably 6 to 8. When the aromatic hydrocarbon group has a substituent, the carbon number does not include the carbon number of the substituent. Examples of substituents that the aromatic hydrocarbon group may have include a halogen atom, a hydroxyl group, a carboxyl group, an alkoxy group, a cyano group, an aliphatic hydrocarbon group, and the like. Examples of the aliphatic hydrocarbon group as the substituent are the same as the aliphatic hydrocarbon group represented by R 1 above.

上述選項中,上述通式(D-1)中之R 1較佳為取代或未取代之苯基,更佳為未取代之苯基。 Among the above options, R 1 in the above general formula (D-1) is preferably a substituted or unsubstituted phenyl group, and more preferably is an unsubstituted phenyl group.

上述通式(D-1)中之n未特別限制,但較佳為3~15之整數,更佳為3~10之整數,又更佳為3~5之整數。n in the above general formula (D-1) is not particularly limited, but is preferably an integer from 3 to 15, more preferably an integer from 3 to 10, and still more preferably an integer from 3 to 5.

上述通式(D-1)中之-* 1及-* 2表示與其他原子之鍵結鍵。 上述通式(D-1)中之鍵結鍵-* 1與鍵結鍵-* 2可相互連結形成環狀構造,較佳形成環狀構造。該情況下,所謂「包含以通式(D-1)所示之構造的化合物」與「以通式(D-1)所示之化合物」同義。 -* 1 and -* 2 in the above general formula (D-1) represent bonds with other atoms. The bonding bond -* 1 and the bonding bond -* 2 in the above general formula (D-1) can be connected to each other to form a cyclic structure, and preferably form a cyclic structure. In this case, "the compound containing the structure represented by the general formula (D-1)" is synonymous with "the compound represented by the general formula (D-1)".

上述通式(D-1)中之鍵結鍵-* 1與鍵結鍵-* 2未相互連結時,-* 1較佳與-N=P(OR 1) 3或-N=P(O)(OR 1)鍵結,-* 2較佳與-P(OR 1) 3或-P(O)(OR 1)鍵結。該等基所含之R 1的說明如上述通式(D-1)中之R 1的說明。 When the bonding bond -* 1 and the bonding bond -* 2 in the above general formula (D-1) are not connected to each other, -* 1 is preferably -N=P(OR 1 ) 3 or -N=P(O )(OR 1 ) bond, -* 2 is preferably bonded with -P(OR 1 ) 3 or -P(O)(OR 1 ). The description of R 1 contained in these groups is the same as the description of R 1 in the above general formula (D-1).

作為(D1)包含磷原子及氮原子之化合物舉例為例如磷腈化合物。此處,本說明書中,所謂「磷腈化合物」係指交替含有磷原子與氮原子,各磷原子具有2個取代基之化合物。 磷腈化合物可為有機化合物或無機化合物之任一者,但較佳為有機化合物。 Examples of the compound containing a phosphorus atom and a nitrogen atom (D1) include a phosphazene compound. Here, in this specification, the "phosphazene compound" refers to a compound containing phosphorus atoms and nitrogen atoms alternately, and each phosphorus atom has two substituents. The phosphazene compound may be either an organic compound or an inorganic compound, but an organic compound is preferred.

作為磷腈化合物舉例為例如環狀磷腈化合物、鏈狀磷腈化合物等,較佳為環狀磷腈化合物。 作為環狀磷腈化合物舉例為例如六苯氧基環三磷腈、八苯氧基環四磷腈、十苯氧基環五磷腈、十二苯氧基環六磷腈、十四苯氧基環七磷腈等之環狀苯氧基磷腈化合物;六丙氧基環三磷腈、八丙氧基環四磷腈、十丙氧基環五磷腈、十二丙氧基環六磷腈、十四丙氧基環七磷腈等之環狀丙氧基磷腈化合物;等。該等中,較佳為環狀苯氧基磷腈化合物,更佳為六苯氧基環三磷腈。 Examples of the phosphazene compound include cyclic phosphazene compounds, chain phosphazene compounds, and the like, and cyclic phosphazene compounds are preferred. Examples of the cyclic phosphazene compound include hexaphenoxycyclotriphosphazene, octaphenoxycyclotetraphosphazene, decaphenoxycyclopentaphosphazene, dodecyloxycyclohexaphosphazene, and tetraphenoxy Cyclic phenoxyphosphazene compounds such as cycloheptaphosphazene; hexapropoxycyclotriphosphazene, octapropoxycyclotetraphosphazene, decapropoxycyclopentaphosphazene, and dodecapropoxycyclohexaphosphazene Cyclic propoxyphosphazene compounds such as phosphazene and tetradecanopropoxycycloheptaphosphazene; etc. Among these, a cyclic phenoxyphosphazene compound is preferred, and a hexaphenoxycyclotriphosphazene compound is more preferred.

(D1)包含磷原子及氮原子之化合物的分子量未特別限制,但較佳為300~3,000,更佳為400~1,500,更佳為500~800。 (D1)包含磷原子及氮原子之化合物的分子量為上述下限值以上時,在保護膜形成用膜之製造過程及硬化過程中有可抑制(D1)包含磷原子及氮原子之化合物揮發之傾向。(D1)包含磷原子及氮原子之化合物的分子量為上述上限值以下時,有保護膜形成用膜中之(D1)包含磷原子及氮原子之化合物的分散性更良好之傾向。 (D1) The molecular weight of the compound containing a phosphorus atom and a nitrogen atom is not particularly limited, but is preferably 300 to 3,000, more preferably 400 to 1,500, more preferably 500 to 800. (D1) When the molecular weight of the compound containing phosphorus atoms and nitrogen atoms is more than the above lower limit, volatilization of the compound containing (D1) phosphorus atoms and nitrogen atoms can be suppressed during the manufacturing process and curing process of the protective film forming film. tendency. When the molecular weight of the compound (D1) containing a phosphorus atom and a nitrogen atom is less than or equal to the above upper limit, the dispersibility of the compound (D1) containing a phosphorus atom and a nitrogen atom in the protective film-forming film tends to be more favorable.

保護膜形成用樹脂組成物中之(D1)包含磷原子及氮原子之化合物含量未特別限制,但相對於保護膜形成用樹脂組成物之固體成分(100質量%),較佳為1~20質%,更佳為2~15質量%,又更佳為2.5~13質量%,再更佳為3~11質量%,又再更佳為3~8質量%,特佳為3~5質量%。 又保護膜形成用樹脂組成物中之(D1)包含磷原子及氮原子之化合物含量未特別限制,但相對於保護膜形成用樹脂組成物之固體成分中無機填充材及著色劑除外之成分的總量(100質量%),較佳為5~70質量%,更佳為7~60質量%,又更佳為8~50質量%,再更佳為9~40質量%,又再更佳為14~35質量%,特佳為19~30質量%。 (D1)包含磷原子及氮原子之化合物含量為上述下限值以上時,有保護膜之難燃性更良好之傾向。又,(D1)包含磷原子及氮原子之化合物含量為上述上限值以下時,有保護膜形成用膜之凝集力及保護膜之接著性更良好之傾向。 The content of (D1) the compound containing phosphorus atoms and nitrogen atoms in the protective film-forming resin composition is not particularly limited, but is preferably 1 to 20% relative to the solid content (100% by mass) of the protective film-forming resin composition. mass %, more preferably 2 to 15 mass %, more preferably 2.5 to 13 mass %, still more preferably 3 to 11 mass %, still more preferably 3 to 8 mass %, particularly preferably 3 to 5 mass % %. Furthermore, the content of the compound (D1) containing phosphorus atoms and nitrogen atoms in the protective film-forming resin composition is not particularly limited, except for the components other than inorganic fillers and colorants in the solid content of the protective film-forming resin composition. The total amount (100 mass %) is preferably 5 to 70 mass %, more preferably 7 to 60 mass %, still more preferably 8 to 50 mass %, still more preferably 9 to 40 mass %, and still more preferably The range is 14~35% by mass, and the best range is 19~30% by mass. (D1) When the content of the compound containing phosphorus atoms and nitrogen atoms is more than the above lower limit, the protective film tends to have better flame retardancy. Moreover, (D1) When the content of the compound containing a phosphorus atom and a nitrogen atom is below the upper limit, the cohesion of the protective film forming film and the adhesiveness of the protective film tend to be better.

保護膜形成用樹脂組成物中之(C)無機填充材之含量相對於(D1)包含磷原子及氮原子之化合物含量的比[(C)成分/(D1)成分]未特別限制,但以質量基準,較佳為2~40,更佳為3~35,又更佳為4~30,特佳為5~25。 含量的比[(C)成分/(D1)成分]為上述範圍時,有保護膜之難燃性、接著性、低熱膨脹性及低吸濕性之均衡更良好之傾向。 The ratio of the content of (C) inorganic filler to the content of (D1) the compound containing phosphorus atoms and nitrogen atoms [(C) component/(D1) component] in the protective film-forming resin composition is not particularly limited, but it is The quality standard is preferably 2 to 40, more preferably 3 to 35, still more preferably 4 to 30, and particularly preferably 5 to 25. When the content ratio [component (C)/component (D1)] is within the above range, the protective film tends to have a better balance of flame retardancy, adhesiveness, low thermal expansion and low moisture absorption.

保護膜形成用樹脂組成物中之(D)難燃劑含量未特別限制,但相對於保護膜形成用樹脂組成物之固體成分(100質量%),較佳為1~20質量%,更佳為2~15質量%,又更佳為2.5~13質量%,再更佳為3~11質量%,又再更佳為3~8質量%,特佳為3~5質量%。 又,保護膜形成用樹脂組成物中之(D)難燃劑含量未特別限制,但相對於保護膜形成用樹脂組成物的固體成分中之無機填充材及著色劑除外之成分的總量(100質量%),較佳為5~70質量%,更佳為7~60質量%,又更佳為8~50質量%,再更佳為9~40質量%,又再更佳為14~35質量%,特佳為19~30質量%。 (D)難燃劑含量為上述下限值以上時,有保護膜之難燃性更良好之傾向。又,(D)難燃劑含量為上述上限值以下時,有保護膜接著性更良好之傾向。 The content of (D) flame retardant in the protective film-forming resin composition is not particularly limited, but it is preferably 1 to 20 mass %, more preferably 1 to 20 mass % relative to the solid content (100 mass %) of the protective film-forming resin composition. It is 2 to 15 mass %, more preferably 2.5 to 13 mass %, still more preferably 3 to 11 mass %, still more preferably 3 to 8 mass %, and particularly preferably 3 to 5 mass %. In addition, the content of the flame retardant (D) in the protective film-forming resin composition is not particularly limited, but the content of the flame retardant (D) is not particularly limited relative to the total amount of components excluding the inorganic filler and colorant in the solid content of the protective film-forming resin composition ( 100% by mass), preferably 5~70% by mass, more preferably 7~60% by mass, still more preferably 8~50% by mass, still more preferably 9~40% by mass, and still more preferably 14~ 35% by mass, particularly preferably 19~30% by mass. (D) When the flame retardant content is more than the above lower limit, the flame retardancy of the protective film tends to be better. In addition, when the content of the flame retardant (D) is less than the above-mentioned upper limit, the adhesiveness of the protective film tends to be better.

作為上述(D1)成分以外之(D)難燃劑舉例為例如含有氯原子之氯系難燃劑、含有溴原子之溴系難燃劑等之鹵素系化合物;紅磷、磷酸酯、磷酸金屬鹽等之含有磷原子之化合物;具有三嗪環之化合物、具有異氰尿酸酯環之化合物等之包含氮原子之化合物;氫氧化鋁、氫氧化鎂、銻系化合物等之無機系難燃劑;等。Examples of the flame retardant (D) other than the above-mentioned component (D1) include chlorine-based flame retardants containing chlorine atoms, bromine-based flame retardants containing bromine atoms, and other halogen compounds; red phosphorus, phosphate esters, and metal phosphates. Compounds containing phosphorus atoms such as salts; compounds containing nitrogen atoms such as compounds with triazine rings and compounds with isocyanurate rings; inorganic flame retardant compounds such as aluminum hydroxide, magnesium hydroxide, antimony compounds, etc. agent; etc.

<(E)硬化促進劑> 保護膜形成用樹脂組成物亦可含有(E)硬化促進劑。 藉由保護膜形成用樹脂組成物含有(E)硬化促進劑,本實施形態之保護膜形成用膜有硬化性更良好之傾向。 (E)硬化促進劑可以單獨使用1種,亦可併用2種以上。 <(E) Hardening accelerator> The resin composition for protective film formation may contain (E) a hardening accelerator. Since the resin composition for protective film formation contains (E) the hardening accelerator, the film for protective film formation of this embodiment tends to have better curability. (E) Hardening accelerator may be used individually by 1 type, or may be used in combination of 2 or more types.

作為(E)硬化促進劑舉例為例如三伸乙基二胺、苄基二甲基胺、三乙醇胺、二甲胺基乙醇、三(二甲胺基甲基)苯酚等之3級胺;2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等之咪唑類;三丁基膦、二苯基膦、三苯基膦等之有機膦類;四苯基鏻四苯基硼酸鹽、四苯基膦四苯基硼酸鹽等之四苯基硼酸鹽;等。該等中較佳為咪唑類,更佳為2-苯基-4,5-二羥基甲基咪唑。Examples of (E) hardening accelerators include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol, etc.; 2 -Methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxy Imidazoles such as methylimidazole; organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine, etc.; tetraphenylphosphonium tetraphenylborate, tetraphenylphosphine tetraphenylborate, etc. Phenylborate; etc. Among these, imidazoles are preferred, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferred.

保護膜形成用樹脂組成物含有(E)硬化促進劑時,保護膜形成用樹脂組成物中之(E)硬化促進劑含量未特別限制,但相對於(B)熱硬化性樹脂100質量份,較佳為0.01~10質量份,更佳為0.1~5質量份,又更佳為1~3質量份。 (E)硬化促進劑之含量為上述下限值以上時,有保護膜形成用膜之硬化性更良好之傾向。又,(E)硬化促進劑之含量為上述上限值以下時,有硬化物之均質性更良好之傾向。 When the resin composition for forming a protective film contains a curing accelerator (E), the content of the curing accelerator (E) in the resin composition for forming a protective film is not particularly limited, but relative to 100 parts by mass of the thermosetting resin (B), It is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, and still more preferably 1 to 3 parts by mass. (E) When the content of the curing accelerator is more than the above-mentioned lower limit, the curing properties of the film for forming a protective film tend to be more favorable. Moreover, when the content of (E) the hardening accelerator is less than the above-mentioned upper limit, the homogeneity of the hardened material tends to be better.

<(F)著色劑> 保護膜形成用樹脂組成物亦可含有(F)著色劑。 藉由保護膜形成用樹脂組成物含有(F)著色劑,可對由本實施形態之保護膜形成用膜形成的保護膜賦予雷射列印性、遮光性、設計性等。 (F)著色劑可單獨使用1種,亦可併用2種以上。 <(F) Colorant> The resin composition for forming a protective film may contain (F) a coloring agent. When the resin composition for protective film formation contains the colorant (F), laser printability, light-shielding properties, design properties, etc. can be imparted to the protective film formed from the film for protective film formation of this embodiment. (F) The coloring agent may be used individually by 1 type, or may be used in combination of 2 or more types.

作為(F)著色劑舉例為習知者,舉例為例如無機系顏料、有機系顏料、有機系染料等。 作為無機系顏料舉例為例如碳黑、鈷系色素、鐵系色素、鉻系色素、鈦系色素、釩系色素、鋯系色素、鉬系色素、釕系色素、鉑系色素、ITO(銦錫氧化物)系色素、ATO(銻錫氧化物)系色素等。 作為有機系顏料及有機系染料舉例為銨系色素、花青系色素、部花菁(merocyanine)系色素、克酮酸(croconium)系色素、方酸菁(squarylium)系色素、薁系色素、聚甲撐系色素、萘醌系色素、吡啶鎓系色素、酞花菁系色素、萘酞菁(naphthalocyanine)系色素、萘內醯胺系色素、偶氮系色素、縮合偶氮系色素、靛藍系色素、苝酮系色素、苝系色素、二噁嗪系色素、喹啶酮系色素、異吲哚啉酮系色素、喹啉酮系色素、吡咯系色素、硫代靛藍系色素、金屬錯合物系色素(金屬錯合鹽染料)、二硫醇金屬錯合物系色素、吲哚酚系色素、三烯丙基甲烷系色素、蒽醌系色素、萘酚系色素、偶氮甲鹼(azomethine)系色素、苯并咪唑酮系色素、吡喃酮系色素、陰丹士林(indanthrene)系色素等。 Examples of the coloring agent (F) include those known in the art, and include, for example, inorganic pigments, organic pigments, organic dyes, and the like. Examples of inorganic pigments include carbon black, cobalt-based pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, ITO (indium tin oxide) pigments, ATO (antimony tin oxide) pigments, etc. Examples of organic pigments and organic dyes include ammonium pigments, cyanine pigments, merocyanine pigments, croconium pigments, squarylium pigments, and azulene pigments. Polymethylene pigments, naphthoquinone pigments, pyridinium pigments, phthalocyanine pigments, naphthalocyanine pigments, naphtholactam pigments, azo pigments, condensed azo pigments, indigo Pigments, perylene-based pigments, perylene-based pigments, dioxazine-based pigments, quinidone-based pigments, isoindolinone-based pigments, quinolinone-based pigments, pyrrole-based pigments, thioindigo-based pigments, metal complexes Compound pigments (metal complex salt dyes), dithiol metal complex pigments, indoxyl pigments, triallylmethane pigments, anthraquinone pigments, naphthol pigments, azomethine (azomethine) pigments, benzimidazolone pigments, pyrone pigments, indanthrene pigments, etc.

保護膜形成用樹脂組成物含有(F)著色劑時,保護膜形成用樹脂組成物中之(F)著色劑含量未特別限制,但基於獲得適度著色效果之觀點,相對於保護膜形成用樹脂組成物之固體成分(100質量%),較佳為0.01~10質量%,更佳為0.05~7.5質量%,又更佳為0.1~5質量%,特佳為1~3質量%。When the resin composition for protective film formation contains the (F) colorant, the content of the (F) colorant in the resin composition for protective film formation is not particularly limited, but from the viewpoint of obtaining a moderate coloring effect, the content of the colorant (F) in the resin composition for protective film formation is lower than that of the resin composition for protective film formation. The solid content (100% by mass) of the composition is preferably 0.01 to 10% by mass, more preferably 0.05 to 7.5% by mass, still more preferably 0.1 to 5% by mass, and particularly preferably 1 to 3% by mass.

<(G)環氧樹脂硬化劑> 保護膜形成用樹脂組成物包含環氧樹脂作為(B)硬化性樹脂時,亦可進而含有(G)環氧樹脂硬化劑。 藉由保護膜形成用樹脂組成物含有(G)環氧樹脂硬化劑,本實施形態之保護膜形成用膜有硬化性更良好之傾向。 (G)環氧樹脂硬化劑可單獨使用1種,亦可併用2種以上。 <(G) Epoxy resin hardener> When the resin composition for protective film formation contains an epoxy resin as the (B) curable resin, it may further contain (G) an epoxy resin curing agent. Since the resin composition for protective film formation contains the (G) epoxy resin hardener, the film for protective film formation of this embodiment tends to have better curability. (G) One type of epoxy resin hardener may be used alone, or two or more types may be used in combination.

作為(G)環氧樹脂硬化劑舉例為例如1分子中具有2個以上之可與環氧基反應之官能基的化合物。 作為可與環氧基反應之官能基舉例為例如酚性羥基、醇性羥基、胺基、羧基、酸基經酸酐化之基等。該等中,較佳為酚性羥基、胺基、酸基經酸酐化之基,更佳為酚性羥基及胺基。 Examples of the (G) epoxy resin hardener include compounds having two or more functional groups capable of reacting with an epoxy group in one molecule. Examples of functional groups that can react with epoxy groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amine groups, carboxyl groups, acidic anhydride groups, and the like. Among these, a phenolic hydroxyl group, an amino group, and an acidic anhydride group are preferred, and a phenolic hydroxyl group and an amino group are more preferred.

作為具有酚性羥基之(G)環氧樹脂硬化劑舉例為例如聯酚、酚醛清漆型酚樹脂、二環戊二烯型酚樹脂、芳烷基型酚樹脂等之酚系硬化劑。 作為具有胺基之(G)環氧樹脂硬化劑舉例為例如雙氰胺等之胺系硬化劑。 Examples of the (G) epoxy resin hardener having a phenolic hydroxyl group include phenol-based hardeners such as biphenol, novolak-type phenol resin, dicyclopentadiene-type phenol resin, and aralkyl-type phenol resin. Examples of the (G) epoxy resin hardener having an amine group include amine-based hardeners such as dicyandiamide.

(G)環氧樹脂硬化劑中,例如聯酚、雙氰胺等之非樹脂成分的分子量未特別限制,但較佳為60~500,更佳為70~200,又更佳為80~120。(G) In the epoxy resin hardener, the molecular weight of non-resin components such as bisphenol and dicyandiamide is not particularly limited, but it is preferably 60 to 500, more preferably 70 to 200, and still more preferably 80 to 120 .

保護膜形成用樹脂組成物含有(G)環氧樹脂硬化劑時,保護膜形成用樹脂組成物中之(G)環氧樹脂硬化劑之含量未特別限制,但基於保護膜形成用膜之硬化性更良好之觀點,相對於環氧樹脂100質量份,較佳為0.1~200質量份,更佳為0.5~100質量份,又更佳為0.7~50質量份,特佳為1~10質量份。When the resin composition for protective film formation contains (G) epoxy resin hardener, the content of (G) epoxy resin hardener in the resin composition for protective film formation is not particularly limited, but it is based on the curing of the film for protective film formation. From the viewpoint of better properties, relative to 100 parts by mass of epoxy resin, 0.1 to 200 parts by mass is preferred, 0.5 to 100 parts by mass is more preferred, 0.7 to 50 parts by mass is more preferred, and 1 to 10 parts by mass is particularly preferred. share.

<(H)交聯劑> (A)熱塑性樹脂具有官能基時,保護膜形成用樹脂組成物亦可含有(H)交聯劑。藉由(H)交聯劑使具有官能基之(A)熱塑性樹脂交聯,可調整保護膜形成用膜之初期接著性及凝集力。 (H)交聯劑可單獨使用1種,亦可併用2種以上。 <(H) Cross-linking agent> When (A) the thermoplastic resin has a functional group, the resin composition for forming a protective film may contain (H) a cross-linking agent. By crosslinking the (A) thermoplastic resin having a functional group with the (H) crosslinking agent, the initial adhesiveness and cohesion of the protective film forming film can be adjusted. (H) Cross-linking agent may be used individually by 1 type, or may be used in combination of 2 or more types.

作為(H)交聯劑舉例為例如有機多元異氰酸酯化合物、有機多元亞胺化合物、金屬螯合系交聯劑(具有金屬螯合構造之交聯劑)、氮丙啶系交聯劑(具有氮丙啶基之交聯劑)等。Examples of (H) crosslinking agents include organic polyisocyanate compounds, organic polyimine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), aziridine crosslinking agents (having a nitrogen propidyl cross-linking agent), etc.

作為有機多元異氰酸酯化合物舉例為例如芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物及脂環族多元異氰酸酯化合物(以下有時將該等化合物統稱為「芳香族多元異氰酸酯化合物等」);上述芳香族多元異氰酸酯化合物等之三聚物、異氰尿酸酯體及加成體;使上述芳香族多元異氰酸酯化合物等與多元醇化合物反應所得之末端異氰酸酯胺基甲酸酯預聚物。 又所謂上述「加成體」係指上述芳香族多元異氰酸酯化合物等與乙二醇、丙二醇、新戊二醇、三羥甲基丙烷、蓖麻油等之低分子含活性氫化合物之反應物。作為其具體例舉例為後述之三羥甲基丙烷之甲苯二異氰酸酯加成物等。 Examples of organic polyvalent isocyanate compounds include aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, and alicyclic polyvalent isocyanate compounds (hereinafter, these compounds may be collectively referred to as "aromatic polyvalent isocyanate compounds, etc."); the above-mentioned aromatic polyvalent isocyanate compounds Terpolymers, isocyanurate bodies and adducts of isocyanate compounds, etc.; terminal isocyanate urethane prepolymers obtained by reacting the above aromatic polyisocyanate compounds, etc. with polyol compounds. The above-mentioned "adduct" refers to the reaction product of the above-mentioned aromatic polyisocyanate compound and low molecular weight active hydrogen-containing compounds such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, castor oil, etc. Specific examples thereof include a toluene diisocyanate adduct of trimethylolpropane described below.

作為有機多元異氰酸酯化合物舉例為例如2,4-甲苯二異氰酸酯;2,6-甲苯二異氰酸酯;1,3-二甲苯二異氰酸酯;1,4-二甲苯二異氰酸酯;二苯基甲烷-4,4’-二異氰酸酯;二苯基甲烷-2,4’-二異氰酸酯;3-甲基二苯基甲烷二異氰酸酯;六亞甲基二異氰酸酯;異佛爾酮二異氰酸酯;二環己基甲烷-4,4’-二異氰酸酯;二環己基甲烷-2,4’-二異氰酸酯;對三羥甲基丙烷等之多元醇之全部或一部分羥基加成選自由甲苯二異氰酸酯、六亞甲基二異氰酸酯及二甲苯二異氰酸酯所成之群中之1種以上之化合物;離胺酸二異氰酸酯等。Examples of organic polyisocyanate compounds include 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 1,3-xylene diisocyanate; 1,4-xylene diisocyanate; diphenylmethane-4,4 '-Diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4, 4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; addition of all or part of the hydroxyl groups to polyols such as trimethylolpropane is selected from toluene diisocyanate, hexamethylene diisocyanate and diisocyanate. One or more compounds in the group consisting of toluene diisocyanate; lysine diisocyanate, etc.

作為有機多元亞胺化合物舉例為例如N,N’-二苯基甲烷-4,4’-雙(1-氮丙啶基甲醯胺)、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、四羥甲基甲烷-三-β-氮丙啶基丙酸酯、N,N’-甲苯-2,4-雙(1-氮丙啶基甲醯胺)三伸乙基三聚氰胺等。Examples of organic polyimine compounds include N,N'-diphenylmethane-4,4'-bis(1-aziridinylmethamide), trimethylolpropane-tris-β-aziridine propionate, tetramethylolmethane-tris-β-aziridinylpropionate, N,N'-toluene-2,4-bis(1-aziridinylformamide)triethylene Melamine etc.

上述選項中,作為(H)交聯劑,較佳為有機多元異氰酸酯化合物,更佳為對三羥甲基丙烷等之多元醇之全部或一部分羥基加成選自由甲苯二異氰酸酯、六亞甲基二異氰酸酯及二甲苯二異氰酸酯所成之群中之1種以上之化合物,又更佳為三羥甲基丙烷之甲苯二異氰酸酯加成物。Among the above options, as the (H) cross-linking agent, it is preferably an organic polyisocyanate compound, and more preferably all or part of the hydroxyl groups added to polyols such as trimethylolpropane are selected from the group consisting of toluene diisocyanate, hexamethylene It is more preferably one or more compounds from the group consisting of diisocyanate and xylene diisocyanate, and more preferably is a toluene diisocyanate adduct of trimethylolpropane.

使用有機多元異氰酸酯化合物作為(H)交聯劑時,(A)熱塑性樹脂較佳具有羥基。(H)交聯劑具有異氰酸酯基,且(A)熱塑性樹脂具有羥基時,藉由(H)交聯劑與(A)熱塑性樹脂之反應,可簡便地將交聯構造導入保護膜形成用膜中。When an organic polyvalent isocyanate compound is used as the (H) cross-linking agent, the (A) thermoplastic resin preferably has a hydroxyl group. When the (H) cross-linking agent has an isocyanate group and the (A) thermoplastic resin has a hydroxyl group, the cross-linked structure can be easily introduced into the protective film forming film through the reaction between the (H) cross-linking agent and the (A) thermoplastic resin. middle.

保護膜形成用樹脂組成物含有(H)交聯劑時,保護膜形成用樹脂組成物中之(H)交聯劑含量未特別限制,但基於保護膜形成用膜之初期接著力及凝集力更良好之觀點,相對於具有官能基之(A)熱塑性樹脂100質量份,較佳為0.01~20質量份,更佳為0.1~10質量份,又更佳為0.5~5質量份。When the resin composition for protective film formation contains a (H) cross-linking agent, the content of the (H) cross-linking agent in the resin composition for protective film formation is not particularly limited, but it is based on the initial adhesion and cohesion of the film for protective film formation. From a more preferable viewpoint, it is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and still more preferably 0.5 to 5 parts by mass based on 100 parts by mass of the (A) thermoplastic resin having a functional group.

<(I)偶合劑> 保護膜形成用樹脂組成物亦可含有(I)偶合劑。 藉由保護膜形成用樹脂組成物含有(I)偶合劑,有可提高(C)無機填充材之分散性,且保護膜之接著性、耐水性等提高之傾向。 (I)偶合劑可單獨使用1種,亦可併用2種以上。 <(I) Coupling agent> The resin composition for forming a protective film may contain (I) a coupling agent. When the resin composition for forming a protective film contains (I) the coupling agent, the dispersibility of the (C) inorganic filler can be improved, and the adhesiveness, water resistance, etc. of the protective film tend to be improved. (I) One coupling agent may be used alone, or two or more coupling agents may be used in combination.

作為(I)偶合劑舉例為例如矽烷偶合劑、鈦酸酯偶合劑等。該等中,較佳為矽烷偶合劑。 作為(I)偶合劑,例如較佳為具有能與具有官能基之(A)熱塑性樹脂、(B)熱硬化性樹脂等反應之官能基者。作為該官能基舉例為例如縮水甘油基、胺基、巰基、乙烯基、(甲基)丙烯醯基、羥基、羧基、咪唑基等。該等中,較佳為具有縮水甘油基者。 Examples of the (I) coupling agent include silane coupling agents, titanate coupling agents, and the like. Among these, a silane coupling agent is preferred. As (I) the coupling agent, for example, those having a functional group capable of reacting with (A) thermoplastic resin, (B) thermosetting resin, etc. having a functional group are preferred. Examples of the functional group include a glycidyl group, an amino group, a mercapto group, a vinyl group, a (meth)acrylyl group, a hydroxyl group, a carboxyl group, an imidazole group, and the like. Among these, those having a glycidyl group are preferred.

作為(I)偶合劑舉例為例如3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基甲基二甲氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、3-縮水甘油氧基丙基甲基二乙氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-(2-胺基乙胺基)丙基三甲氧基矽烷、3-(2-胺基乙胺基)丙基甲基二乙氧基矽烷、3-苯胺基丙基三甲氧基矽烷、3-脲基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、雙(3-三乙氧基矽烷基丙基)四硫、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、咪唑基矽烷、該等之1種或2種以上之部分水解縮合物等。該等中,較佳為3-縮水甘油氧基丙基三甲氧基矽烷。Examples of the coupling agent (I) include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, and 3-glycidoxypropyltriethoxysilane. Silane, 3-glycidoxypropylmethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane silane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethylamino)propylmethyldiethoxy Silane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis- (3-Triethoxysilylpropyl)tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetyloxysilane, imidazolesilane, One or more of these partial hydrolysis condensates, etc. Among these, 3-glycidoxypropyltrimethoxysilane is preferred.

保護膜形成用樹脂組成物含有(I)偶合劑時,保護膜形成用樹脂組成物中之(I)偶合劑含量未特別限制,但相對於(A)熱塑性樹脂及(B)熱硬化性樹脂之總量100質量份,較佳為0.001~10質量份,更佳為0.005~1質量份,又更佳為0.01~0.1質量份。 (I)偶合劑之含量為上述下限值以上時,有(C)無機填充材之分散性、保護膜之接著性、耐水性等更良好之傾向。又,(I)偶合劑之含量為上述上限值以下時,有釋氣的產生更受抑制之傾向。 When the resin composition for forming a protective film contains (I) a coupling agent, the content of the (I) coupling agent in the resin composition for forming a protective film is not particularly limited, but compared to (A) thermoplastic resin and (B) thermosetting resin The total amount is 100 parts by mass, preferably 0.001~10 parts by mass, more preferably 0.005~1 part by mass, and still more preferably 0.01~0.1 parts by mass. (I) When the content of the coupling agent is more than the above lower limit, (C) the dispersibility of the inorganic filler, the adhesiveness of the protective film, the water resistance, etc. tend to be better. In addition, when the content of the coupling agent (I) is less than the above upper limit, the generation of outgassing tends to be further suppressed.

<溶劑> 保護膜形成用樹脂組成物,基於容易形成膜之觀點,可含有溶劑。 作為溶劑,可單獨使用1種,亦可併用2種以上。 <Solvent> The resin composition for forming a protective film may contain a solvent from the viewpoint of facilitating film formation. As the solvent, one type may be used alone, or two or more types may be used in combination.

作為溶劑舉例為例如甲苯、二甲苯等之烴;甲醇、乙醇、2-丙醇、2-甲基丙-1-醇、1-丁醇等之醇;乙酸乙酯等之酯;丙酮、甲基乙基酮等之酮;四氫呋喃等之醚;二甲基甲醯胺、N-甲基吡咯烷酮等之醯胺(具有醯胺鍵之化合物)等。該等中,較佳為甲苯、乙酸乙酯、甲基乙基酮。Examples of solvents include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, 2-methylpropan-1-ol, and 1-butanol; esters such as ethyl acetate; acetone, methane, etc. Ketones such as ethyl ketone; ethers such as tetrahydrofuran; amide (compounds with amide bonds) such as dimethylformamide, N-methylpyrrolidone, etc. Among these, toluene, ethyl acetate, and methyl ethyl ketone are preferred.

<其他成分> 保護膜形成用樹脂組成物可含有上述各成分以外之其他成分,亦可不含。 作為其他成分舉亦為例如上述各成分以外之樹脂成分、可塑劑、抗靜電劑、抗氧化劑、吸氣劑(gettering agent)等。 其他成分,針對各者可單獨使用1種,亦可併用2種以上。 保護膜形成用樹脂組成物中之其他成分之含量未特別限制,只要根據目的適當選擇即可。 <Other ingredients> The resin composition for forming a protective film may or may not contain other components than the above-mentioned components. Examples of other components include resin components other than the above-mentioned components, plasticizers, antistatic agents, antioxidants, gettering agents, and the like. For each of the other components, one type may be used alone, or two or more types may be used in combination. The content of other components in the resin composition for forming a protective film is not particularly limited, as long as it is appropriately selected according to the purpose.

<保護膜形成用樹脂組成物之製造方法> 保護膜形成用樹脂組成物可藉由調配用以構成其之各成分而製造。 調配各成分時之添加順序未特別限制,可同時添加2種以上之成分,亦可逐次添加。 使用溶劑時,溶劑以外之任何成分亦可藉溶劑稀釋或未經溶劑稀釋與其他成分混合。 混合各成分之方法未特別限制,例如只要自下述之習知方法適當選擇即可:藉由使攪拌子、攪拌翼等旋轉而混合之方法;使用混合機混合之方法;施加超音波而混合之方法;等。 添加及混合各成分時之溫度及時間未特別限制,只要根據欲使用之成分適當調整即可。 <Production method of resin composition for protective film formation> The resin composition for forming a protective film can be produced by blending each component constituting it. The order of addition when preparing each component is not particularly limited. Two or more components can be added at the same time or one after another. When a solvent is used, any ingredients other than the solvent may also be mixed with other ingredients, diluted with the solvent or undiluted by the solvent. The method of mixing each component is not particularly limited, and may be appropriately selected from the following conventional methods: mixing by rotating a stirrer, stirring blade, etc.; mixing using a mixer; and mixing by applying ultrasonic waves method; etc. The temperature and time when adding and mixing each ingredient are not particularly limited, as long as they are appropriately adjusted according to the ingredients to be used.

[保護膜形成用膜之厚度及形狀] 本實施形態之保護膜形成用膜的厚度未特別限制,但較佳為1~ 100μm,更佳為3~75μm,又更佳為5~50μm。 保護膜形成用膜之厚度為上述下限值以上時,有保護膜之保護功能更良好之傾向。又,保護膜形成用膜之厚度為上述上限值以下時,經濟性優異並且有保護膜之切斷等之加工容易之傾向。 [Thickness and shape of film for protective film formation] The thickness of the protective film forming film in this embodiment is not particularly limited, but is preferably 1 to 100 μm, more preferably 3 to 75 μm, and still more preferably 5 to 50 μm. When the thickness of the film for forming a protective film is more than the above-mentioned lower limit, the protective function of the protective film tends to be better. In addition, when the thickness of the film for forming a protective film is less than or equal to the above-mentioned upper limit, economical efficiency is excellent and processing such as cutting of the protective film tends to be easy.

本實施形態之保護膜形成用膜之形狀未特別限制,但基於貼附於圓形半導體晶圓上之觀點,可為俯視下圓形。保護膜形成用膜之形狀於俯視下為圓形時,其直徑例如為200mm(8吋晶圓用)、300mm(12吋晶圓用)等。The shape of the film for forming a protective film in this embodiment is not particularly limited, but from the viewpoint of being attached to a circular semiconductor wafer, it may be circular in plan view. When the shape of the protective film forming film is circular in plan view, its diameter is, for example, 200 mm (for 8-inch wafers), 300 mm (for 12-inch wafers), etc.

[保護膜形成用膜之使用方法] 本實施形態之保護膜形成用膜可藉由按壓於保護對象物而貼附於保護對象物。按壓時,可根據需要加熱保護膜形成用膜。 [How to use protective film forming film] The film for forming a protective film according to this embodiment can be attached to the object to be protected by being pressed against the object to be protected. While pressing, the protective film forming film can be heated as necessary.

作為貼附本實施形態之保護膜形成用膜之保護對象物舉例為例如半導體晶圓、半導體晶片等。將保護膜形成用膜貼附於半導體晶圓時,例如藉由將保護膜形成用膜貼附於半導體晶圓之背面並硬化而形成附保護膜之半導體晶圓,隨後,藉由將該附保護膜之半導體晶圓單片化,可獲得於背面具有保護膜之附保護膜之半導體晶片。 作為半導體晶圓舉例為例如矽晶圓;砷化鎵、碳化矽、藍寶石、鉭酸鋰、鈮酸鋰、氮化鎵、銦磷等之晶圓;玻璃晶圓;等。 作為半導體晶片舉例為例如將上述半導體晶圓單片化者。 Examples of objects to be protected to which the protective film forming film of this embodiment is attached include semiconductor wafers, semiconductor wafers, and the like. When the protective film-forming film is attached to the semiconductor wafer, for example, the protective film-forming film is attached to the back surface of the semiconductor wafer and hardened to form a semiconductor wafer with a protective film, and then the attached film is attached to the semiconductor wafer. The semiconductor wafer with protective film is diced into pieces, and a semiconductor wafer with protective film having a protective film on the back side can be obtained. Examples of semiconductor wafers include silicon wafers; wafers of gallium arsenide, silicon carbide, sapphire, lithium tantalate, lithium niobate, gallium nitride, indium phosphorus, etc.; glass wafers; etc. An example of a semiconductor wafer is one obtained by dicing the above-mentioned semiconductor wafer.

貼附本實施形態之保護膜形成用膜之半導體晶圓或半導體晶片較佳為背面研削後者。 背面研削後之半導體晶圓或半導體晶片之厚度未特別限制,但較佳為5~150μm,更佳為7~100μm,又更佳為10~ 45μm。 The semiconductor wafer or semiconductor wafer to which the protective film forming film of this embodiment is attached is preferably back ground. The thickness of the semiconductor wafer or semiconductor wafer after back grinding is not particularly limited, but is preferably 5~150 μm, more preferably 7~100 μm, and more preferably 10~45 μm.

<保護膜形成用膜之硬化條件> 將保護膜形成用膜貼附於保護對象物後之硬化條件未特別限制,可根據保護膜形成用膜之種類適當決定。 例如,於保護膜形成用膜具有熱硬化性時,使保護膜形成用膜熱硬化時之加熱溫度可為例如100~200℃,可為110~180℃,亦可為120~170℃。且使保護膜形成用膜熱硬化時之加熱時間可為0.5~5小時,可為0.7~4小時,可為1~3小時。 又,對於具有能量線硬化性之保護膜形成用膜照射紫外線使之硬化時,紫外線之照度可為例如30~500mW/cm 2,可為40~420mW/cm 2,可為50~340mW/cm 2。又紫外線的光量可為例如100~2,000 mJ/cm 2,可為125~1,000mJ/cm 2,可為150~500mJ/cm 2<Curing conditions of the protective film-forming film> The curing conditions after the protective film-forming film is attached to the object to be protected are not particularly limited and can be appropriately determined according to the type of the protective film-forming film. For example, when the film for protective film formation has thermosetting properties, the heating temperature when thermosetting the film for protective film formation may be, for example, 100 to 200°C, 110 to 180°C, or 120 to 170°C. Moreover, the heating time when thermally hardening the film for forming a protective film can be 0.5 to 5 hours, 0.7 to 4 hours, or 1 to 3 hours. Furthermore, when the protective film-forming film having energy ray curability is irradiated with ultraviolet rays to harden it, the illuminance of the ultraviolet rays may be, for example, 30 to 500 mW/cm 2 , 40 to 420 mW/cm 2 , or 50 to 340 mW/cm. 2 . The amount of ultraviolet light may be, for example, 100 to 2,000 mJ/cm 2 , 125 to 1,000 mJ/cm 2 , or 150 to 500 mJ/cm 2 .

將本實施形態之保護膜形成用膜貼附於保護對象物之時期及使之硬化之時期未特別限制,只要根據本實施形態之保護膜形成用膜適用之製程適當決定即可。 例如,藉由將半導體晶圓背面研削後予以單片化而製造半導體晶片之製程中,只要於半導體晶圓之背面研削後起至將單面化後之半導體晶片安裝於基板之前之任一時期,將保護膜形成用膜貼附於半導體晶圓或半導體晶片並硬化形成保護膜即可。 但,基於將半導體晶圓單片化時抑制破損等之觀點,較佳於半導體晶圓之背面研削後、單片化前之時期,將保護膜形成用膜貼附於半導體晶圓之背面,藉由硬化,形成附保護膜之半導體晶圓。 作為附保護膜之半導體晶圓之單片化方法,例如可適用刀片切割法、雷射切割法、隱形切割(註冊商標)法等之習知單片化方法。 藉由將附保護膜之半導體晶圓單片化,可獲得附保護膜之半導體晶片。 The timing of attaching the protective film-forming film of this embodiment to the object to be protected and the timing of hardening it are not particularly limited, as long as they are appropriately determined based on the process to which the protective film-forming film of this embodiment is applied. For example, in a process of manufacturing a semiconductor wafer by grinding the back surface of the semiconductor wafer and then singulating it into individual pieces, any period from after the back surface grinding of the semiconductor wafer to before the single-sided semiconductor wafer is mounted on a substrate, The film for forming a protective film is attached to a semiconductor wafer or semiconductor wafer and cured to form a protective film. However, from the viewpoint of suppressing damage when the semiconductor wafer is singulated, it is preferable to attach the protective film forming film to the back surface of the semiconductor wafer after grinding the back surface of the semiconductor wafer and before singulating it. By hardening, a semiconductor wafer with a protective film is formed. As a method of singulating semiconductor wafers with a protective film, for example, conventional singulating methods such as blade dicing, laser dicing, and stealth dicing (registered trademark) methods can be applied. By dicing the protective film-attached semiconductor wafer, the protective film-attached semiconductor wafer can be obtained.

[保護膜形成用膜之製造方法] 保護膜形成用膜可藉由例如將保護膜形成用樹脂組成物製膜為膜狀而製造。具體而言,例如,可藉由將保護膜形成用樹脂組成物塗佈於剝離膜等之支撐片上,根據需要予以乾燥,而於支撐片上形成保護膜形成用膜。 [Production method of film for protective film formation] The film for protective film formation can be produced, for example, by forming the resin composition for protective film formation into a film shape. Specifically, for example, the protective film-forming film can be formed on a support sheet such as a release film by applying the resin composition for protective film formation to the support sheet and drying the composition as necessary.

[第一態樣之保護膜形成用複合片] 本實施形態之第一態樣之保護膜形成用複合片具有將本實施形態之保護膜形成用膜夾在2片剝離膜之間的構成。 又本說明書中,所謂「剝離膜」係指具有剝除功能之膜,係為了保護在貼附於保護對象物之前的保護膜形成用膜,而貼附於保護膜形成用膜之表面者。 第一態樣之保護膜形成用複合片所具有之保護膜形成用膜之較佳態樣如上述。 [First aspect of composite sheet for protective film formation] The composite sheet for protective film formation according to the first aspect of this embodiment has a structure in which the film for protective film formation according to this embodiment is sandwiched between two release films. In this specification, the "peeling film" refers to a film with a peeling function that is attached to the surface of the protective film-forming film in order to protect the protective film-forming film before it is attached to the object to be protected. A preferred aspect of the protective film-forming film included in the protective film-forming composite sheet of the first aspect is as described above.

<第一態樣之保護膜形成用複合片之構成> 圖1係示意性顯示第一態樣之保護膜形成用複合片之一例的剖面圖。又,以下說明所用之圖,為了方便起見,有時將成為重要部分放大顯示,不限於各構成要素之尺寸比例需與實際尺寸相同。 <Construction of the first aspect of the composite sheet for forming a protective film> FIG. 1 is a cross-sectional view schematically showing an example of the composite sheet for forming a protective film according to the first aspect. In addition, in the drawings used in the following description, for the sake of convenience, important parts may be enlarged in some cases, and the size ratio of each component does not need to be the same as the actual size.

圖1所示之保護膜形成用複合片1在保護膜形成用膜10之一表面10a上具有第1剝離膜111,於另一表面10b上具有第2剝離膜112。 具有此種構成之保護膜形成用複合片例如較佳作成捲筒狀保存。 第1剝離膜111及第2剝離膜112可彼此相同,亦可相異。例如,第1剝離膜111及第2剝離膜112自保護膜形成用膜10剝離時之必要剝離力可互為相異。 The protective film forming composite sheet 1 shown in FIG. 1 has a first release film 111 on one surface 10a of the protective film forming film 10 and a second release film 112 on the other surface 10b. The composite sheet for forming a protective film having such a structure is preferably stored in a roll shape, for example. The first release film 111 and the second release film 112 may be the same as each other, or they may be different. For example, the necessary peeling forces when the first release film 111 and the second release film 112 are peeled off from the protective film forming film 10 may be different from each other.

<剝離膜> 可使用於保護膜形成用複合片之剝離膜舉例為例如將剝離劑塗佈於剝離膜用之基材上者。 作為剝離膜用之基材舉例為例如聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、聚氯乙烯膜、氯乙烯共聚物膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚對苯二甲酸丁二酯膜、聚胺基甲酸酯膜、乙烯乙酸乙烯酯共聚物膜、離聚物樹脂膜、乙烯/(甲基)丙烯酸共聚物膜、乙烯/(甲基)丙烯酸酯共聚物膜、聚苯乙烯膜、聚碳酸酯膜、聚醯亞胺膜、氟樹脂膜等之透明膜;該等之交聯膜;該等之著色膜;不透明膜;上等紙、玻璃紙、牛皮紙等之紙類;等。該等可使用單層,亦可將2層以上積層使用。 <Peel-off film> Examples of the release film that can be used for the composite sheet for forming a protective film include a release agent applied to a base material for the release film. Examples of the base material for the release film include polyethylene film, polypropylene film, polybutylene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, and polyparaphenylene. Ethylene dicarboxylate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene/ Transparent films such as (meth)acrylic copolymer film, ethylene/(meth)acrylate copolymer film, polystyrene film, polycarbonate film, polyimide film, fluororesin film, etc.; cross-linking of these films Films; colored films; opaque films; fine paper, cellophane, kraft paper, etc.; etc. These can be used as a single layer or 2 or more layers can be laminated.

作為剝離劑舉例為例如矽氧系樹脂、烯烴系樹脂、異戊二烯系樹脂、丁二烯系樹脂等之橡膠系彈性體;長鏈烷基系樹脂、醇酸系樹脂、氟系樹脂;等。剝離劑可單獨使用1種,亦可併用2種以上。Examples of release agents include rubber elastomers such as silicone resins, olefin resins, isoprene resins, butadiene resins; long-chain alkyl resins, alkyd resins, and fluorine resins; wait. One type of release agent may be used alone, or two or more types may be used in combination.

剝離膜之厚度未特別限制,但較佳為10~500 μm,更佳為15~300 μm,又更佳為20~100μm。 剝離膜之厚度為上述下限值以上時,有保護膜形成用複合片之耐變形性更良好之傾向。又,剝離膜之厚度為上述上限值以下時,有獲得適度柔軟性,使保護膜形成用複合片之處理性更良好之傾向。 The thickness of the release film is not particularly limited, but is preferably 10 to 500 μm, more preferably 15 to 300 μm, and still more preferably 20 to 100 μm. When the thickness of the release film is more than the above-mentioned lower limit, the deformation resistance of the composite sheet for forming a protective film tends to be better. In addition, when the thickness of the release film is equal to or less than the above-mentioned upper limit, moderate flexibility is obtained and the composite sheet for forming a protective film tends to have better handling properties.

<第一態樣之保護膜形成用複合片之製造方法> 第一態樣之保護膜形成用複合片可依據上述[保護膜形成用膜之製造方法]而製造。具體而言,例如將塗佈保護膜形成用樹脂組成物之對象作為剝離膜之剝離處理面,於剝離膜上形成保護膜形成用膜之後,對於該保護膜形成用膜之露出面,貼附另一剝離膜之剝離處理面,藉此可製造第一態樣之保護膜形成用複合片。 <Method for manufacturing the composite sheet for protective film formation according to the first aspect> The composite sheet for protective film formation of the first aspect can be produced according to the above [Production method of film for protective film formation]. Specifically, for example, the object to be coated with the resin composition for forming a protective film is the release-processed surface of the release film, and after the protective film-forming film is formed on the release film, the protective film-forming film is attached to the exposed surface. The peeling-treated surface of the other peeling film can be used to produce a composite sheet for forming a protective film according to the first aspect.

[第二態樣之保護膜形成用複合片] 本實施形態之第二態樣之保護膜形成用複合片係依序具有基材、黏著劑層、本實施形態之保護膜形成用膜之保護膜形成用複合片。 第二態樣之保護膜形成用複合片所具有之保護膜形成用膜之較佳態樣如上述。 [Second Aspect: Composite Sheet for Protective Film Formation] The composite sheet for forming a protective film according to the second aspect of this embodiment is a composite sheet for forming a protective film which has a base material, an adhesive layer, and the film for forming a protective film of this embodiment in this order. A preferred aspect of the protective film-forming film included in the protective film-forming composite sheet of the second aspect is as described above.

第二態樣之保護膜形成用複合片,除了保護膜形成用膜以外,還具有基材及黏著劑層。因此,例如,將第二態樣之保護膜形成用複合片之保護膜形成用膜貼附於半導體晶圓上並硬化,形成保護膜時,獲得經由黏著劑層由基材支撐之附保護膜之半導體晶圓。經由黏著劑層由基材支撐之附保護膜之半導體晶圓例如可固定於基材側表面並單片化。亦即,第二態樣之保護膜形成用複合片可作成將保護膜形成用膜與具有基材及黏著劑層之切割片一體化者而使用。The protective film-forming composite sheet of the second aspect has a base material and an adhesive layer in addition to the protective film-forming film. Therefore, for example, when the protective film-forming film of the protective film-forming composite sheet of the second aspect is attached to a semiconductor wafer and hardened to form a protective film, an attached protective film supported by the base material via the adhesive layer is obtained. of semiconductor wafers. For example, the semiconductor wafer with a protective film supported by a substrate via an adhesive layer can be fixed on the side surface of the substrate and singulated. That is, the protective film-forming composite sheet of the second aspect can be used by integrating the protective film-forming film with a dicing sheet having a base material and an adhesive layer.

<第二態樣之保護膜形成用複合片之構成> 第二態樣之保護膜形成用複合片可為僅由基材、黏著劑層及保護膜形成用膜所成,但亦可具有基材、黏著劑層及保護膜形成用膜以外之其他構成構件。作為其他構成構件舉例為例如保護膜形成用膜之與黏著劑層相反側之面上積層之剝離膜等。 第二態樣之保護膜形成用複合片可具有之剝離膜之較佳態樣如上述。 <Construction of the second aspect of the protective film forming composite sheet> The protective film-forming composite sheet of the second aspect may be composed only of a base material, an adhesive layer, and a protective film-forming film, but may also have other components other than the base material, an adhesive layer, and a protective film-forming film. component. Examples of other structural members include a release film laminated on the surface of the protective film-forming film opposite to the adhesive layer. Preferable aspects of the release film that the composite sheet for forming a protective film of the second aspect may have are as described above.

圖2及圖3係示意性顯示第二態樣之保護膜形成用複合片之例的剖面圖。 又各圖中,對與已說明之圖中所示者相同之構成要素標註與其已說明之圖之情況相同的符號,並省略其詳細說明。 2 and 3 are cross-sectional views schematically showing an example of the composite sheet for forming a protective film according to the second aspect. In each of the drawings, the same components as those shown in the previously described drawings are denoted by the same symbols as in the previously described drawings, and detailed descriptions thereof are omitted.

圖2所示之保護膜形成用複合片1A係於基材12上具有黏著劑層13,於黏著劑層13上具有保護膜形成用膜10。保護膜形成用複合片1A進而於保護膜形成用膜10之表面10a(上表面)與黏著劑層13之表面13a(上表面)上積層剝離膜11。保護膜形成用複合片1A係以剝離膜11經除下之狀態,將半導體晶圓(圖示略)之背面貼附於保護膜形成用膜10之表面10a中的中央側的一部分區域,進而將保護膜形成用膜10之周緣部附近之區域貼附於環框等之治具而使用。The protective film-forming composite sheet 1A shown in FIG. 2 has an adhesive layer 13 on a base material 12 and a protective film-forming film 10 on the adhesive layer 13 . The composite sheet 1A for protective film formation further has a peeling film 11 laminated on the surface 10a (upper surface) of the film 10 for protective film formation and the surface 13a (upper surface) of the adhesive layer 13. The composite sheet 1A for protective film formation is made by attaching the back surface of a semiconductor wafer (not shown) to a part of the center side of the surface 10 a of the film 10 for protective film formation in a state where the release film 11 is removed, and then The area near the peripheral edge of the protective film forming film 10 is attached to a jig such as a ring frame and used.

圖3所示之保護膜形成用複合片1B除了於黏著劑層13之表面13a的一部分,即周緣部附近之區域積層治具用接著劑層14,於保護膜形成用膜10之表面10a(上表面)與治具用接著劑層14之表面14a(上表面)積層剝離膜11以外,與圖2所示之保護膜形成用複合片1A相同。 治具用接著劑層14可為例如含有接著劑成分之單層構造者,亦可為具有於成為芯材之片的兩面積層含有接著劑成分之層的複數層構造者。 保護膜形成用複合片1B係以剝離膜11經除下之狀態,將半導體晶圓(圖示略)之背面貼附於保護膜形成用膜10之表面10a上,進而將治具用接著劑層14之表面14a中的上表面貼附於環框等之治具上而使用。 The composite sheet 1B for protective film formation shown in FIG. 3 is laminated with the adhesive layer 14 for a jig on a part of the surface 13a of the adhesive layer 13, that is, the area near the peripheral edge, and the surface 10a ( The upper surface) is the same as the composite sheet 1A for protective film formation shown in FIG. 2 except that the release film 11 is laminated on the surface 14a (upper surface) of the adhesive layer 14 for the jig. The adhesive layer 14 for a jig may have a single-layer structure containing an adhesive component, for example, or may have a multiple-layer structure having layers containing an adhesive component laminated on both surfaces of the sheet serving as the core material. The composite sheet 1B for protective film formation is attached to the surface 10a of the film 10 for protective film formation by attaching the back surface of the semiconductor wafer (not shown) with the release film 11 removed, and then applying the adhesive for the jig. The upper surface of the surface 14a of the layer 14 is attached to a jig such as a ring frame and used.

本實施形態之第二態樣之保護膜形成用複合片不限於圖2及圖3所示者,在不損及本實施形態之效果的範圍內,可為圖2及圖3所示者之一部分構成經變更或刪除者,進而追加目前為止說明之其他構成者。The composite sheet for forming a protective film according to the second aspect of this embodiment is not limited to what is shown in Figures 2 and 3, and may be what is shown in Figures 2 and 3 within the scope that does not impair the effects of this embodiment. Some of the components have been changed or deleted, and other components described so far have been added.

<基材> 作為基材之構成材料舉例為例如各種樹脂。 作為構成基材之樹脂舉例為例如低密度聚乙烯(LDPE)、直鏈低密度聚乙烯(LLDPE)、高密度聚乙烯(HDPE)等之聚乙烯;聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、降冰片烯樹脂等之聚乙烯以外的聚烯烴;乙烯-乙酸乙烯酯共聚物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-降冰片烯共聚物等之乙烯系共聚物(使用乙烯作為單體所得之共聚物);聚氯乙烯、氯乙烯共聚物等之氯乙烯系樹脂(使用氯乙烯作為單體所得之樹脂);聚苯乙烯;聚環烯烴;聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯、聚間苯二甲酸乙二酯、聚2,6-萘二羧酸乙二酯、所有構成單位為具有芳香族環式基之全芳香族聚酯等之聚酯;2種以上之聚酯的共聚物;聚(甲基)丙烯酸酯;聚胺基甲酸酯;聚胺基甲酸酯丙烯酸酯;聚醯亞胺;聚醯胺;聚碳酸酯;氟樹脂;聚縮醛;改質聚苯醚;聚苯硫醚;聚碸;聚醚酮;該等樹脂之1種或2種以上經交聯之交聯樹脂;使用該等樹脂之1種或2種以上之離聚物等之改質樹脂等。構成基材之樹脂可單獨用1種,亦可併用2種以上。 該等中,基於耐熱性之觀點,較佳為聚丙烯、聚對苯二甲酸丁二酯。 <Substrate> Examples of the constituent material of the base material include various resins. Examples of resins constituting the base material include polyethylene such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polypropylene, polybutylene, and polybutadiene. , polyolefins other than polyethylene such as polymethylpentene and norbornene resin; ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene -Ethylene copolymers such as norbornene copolymers (copolymers obtained by using ethylene as a monomer); vinyl chloride resins such as polyvinyl chloride and vinyl chloride copolymers (resins obtained by using vinyl chloride as a monomer); Polystyrene; polycyclic olefin; polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, poly2,6-naphthalene dicarboxylate Polyethylene carboxylate, polyesters in which all constituent units are fully aromatic polyesters with aromatic cyclic groups; copolymers of two or more polyesters; poly(meth)acrylate; polyurethane ester; polyurethane acrylate; polyimide; polyamide; polycarbonate; fluororesin; polyacetal; modified polyphenylene ether; polyphenylene sulfide; polypropylene; polyetherketone; the Cross-linked resins that are cross-linked with one or more of these resins; modified resins using ionomers of one or more of these resins, etc. The resin constituting the base material may be used alone, or two or more types may be used in combination. Among these, from the viewpoint of heat resistance, polypropylene and polybutylene terephthalate are preferred.

基材除上述樹脂以外,亦可含有例如填充材、著色劑、抗靜電劑、抗氧化劑、有機潤滑劑、觸媒、軟化劑(可塑劑)等之習知各種添加劑。In addition to the above-mentioned resins, the base material may also contain various conventional additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), and the like.

基材亦可實施表面處理以提高與黏著劑層等其他層之密著性。 作為表面處理方法,舉例為例如利用噴砂處理、溶劑處理等之凹凸化處理;電暈放電處理、電子束照射處理、電漿處理、臭氧/紫外線照射處理、火焰處理、鉻酸處理、熱風處理等之氧化處理;底塗處理;等。該等中,基於將保護膜形成用複合片適用於刀片切割時抑制因刀片摩擦產生之基材斷片發生之觀點,較佳為實施電子束照射處理者。 The substrate can also be surface treated to improve adhesion with other layers such as the adhesive layer. Examples of surface treatment methods include roughening treatment using sand blasting, solvent treatment, etc.; corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone/ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, etc. Oxidation treatment; primer treatment; etc. Among them, the composite sheet for forming a protective film is preferably subjected to electron beam irradiation treatment from the viewpoint of suppressing the occurrence of base material fragmentation due to blade friction when the composite sheet is applied to cutting with a blade.

基材可僅由1層所成,亦可由2層以上之複數層所成。基材由複數層所成時,構成複數層之各層可以彼此相同,亦可相異。 此外,基材亦可具有例如抗靜電塗覆層、於保護膜形成用複合片重疊保存時用於防止基材與其他片接著、基材與吸附膠帶接著之層等者。 The base material may be composed of only one layer, or may be composed of two or more layers. When the base material is composed of a plurality of layers, the layers constituting the plurality of layers may be the same as each other or may be different. In addition, the base material may also have, for example, an antistatic coating layer, a layer for preventing the base material from adhering to other sheets when the protective film-forming composite sheets are stacked and stored, or a layer that prevents the base material from adhering to an adsorption tape.

基材厚度未特別限制,但較佳為40~300μm,更佳為50~200μm,又更佳為60~150μm。 基材厚度為上述範圍時,有保護膜形成用複合片之可撓性及貼附性更良好之傾向。 The thickness of the substrate is not particularly limited, but is preferably 40 to 300 μm, more preferably 50 to 200 μm, and more preferably 60 to 150 μm. When the base material thickness is within the above range, the flexibility and adhesion of the protective film forming composite sheet tend to be better.

<黏著劑層> 黏著劑層係設於基材與保護膜形成用膜之間之具有黏著性之層。 黏著劑層可僅由1層所成,亦可由2層以上之複數層所成。黏著劑層由複數層所成時,構成複數層之各層可彼此相同,也可相異。 <Adhesive layer> The adhesive layer is an adhesive layer provided between the base material and the protective film forming film. The adhesive layer may be composed of only one layer, or may be composed of two or more layers. When the adhesive layer is composed of a plurality of layers, the layers constituting the plurality of layers may be the same as each other or may be different from each other.

作為構成黏著劑層之黏著性樹脂舉例為例如丙烯酸樹脂、胺基甲酸酯樹脂、橡膠系樹脂、矽氧樹脂、環氧樹脂、聚乙烯醚樹脂、聚碳酸酯樹脂、酯系樹脂等之黏著性樹脂。該等黏著性樹脂為具有2種以上構成單位之共聚物時,該共聚物之形態未特別限制,可為嵌段共聚物、無規共聚物及接枝共聚物之任一者。 該等中,基於展現優異黏著力之觀點,較佳為丙烯酸樹脂。 Examples of the adhesive resin constituting the adhesive layer include acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether resin, polycarbonate resin, ester resin, etc. Sex resin. When the adhesive resin is a copolymer having two or more structural units, the form of the copolymer is not particularly limited and may be any of a block copolymer, a random copolymer, and a graft copolymer. Among these, acrylic resin is preferred from the viewpoint of exhibiting excellent adhesive force.

又,本實施形態中,所謂「黏著性樹脂」係包含具有黏著性之樹脂與具有接著性之樹脂兩者之概念,例如,不僅是樹脂本身具有黏著性者,亦包含藉由該樹脂與添加劑等其他成分併用而顯示黏著性之樹脂;藉由熱、水等之觸發點存在而顯示接著性之樹脂;等。In addition, in this embodiment, the so-called "adhesive resin" is a concept that includes both adhesive resin and adhesive resin. For example, not only the resin itself has adhesiveness, but also includes the resin and the additive through the resin. Resins that exhibit adhesiveness when used in combination with other ingredients; resins that exhibit adhesion through the presence of trigger points such as heat and water; etc.

黏著劑層之厚度未特別限制,但較佳為3~30 μm,更佳為4~20 μm,又更佳為5~17μm。 黏著劑層厚度為上述下限值以上時,有觸黏性及黏著力更良好之傾向。且,黏著劑層之厚度為上述上限值以下時,有將保護膜形成用複合片應用於刀片切割時之刀片切割適性及拾取適性更良好之傾向。 The thickness of the adhesive layer is not particularly limited, but is preferably 3~30 μm, more preferably 4~20 μm, and more preferably 5~17 μm. When the thickness of the adhesive layer is more than the above-mentioned lower limit, the tackiness and adhesion tend to be better. Furthermore, when the thickness of the adhesive layer is less than the above-mentioned upper limit, the blade cutting suitability and pick-up suitability tend to be better when the protective film forming composite sheet is used for blade cutting.

黏著劑層可使用能量線硬化性黏著劑形成者,亦可使用非能量線硬化性黏著劑形成者。又非能量線硬化性黏著劑中包括熱硬化性黏著劑及非硬化性黏著劑。The adhesive layer may be formed using an energy ray curable adhesive or a non-energy ray curable adhesive. Non-energy ray curing adhesives include thermosetting adhesives and non-curing adhesives.

<第二態樣之保護膜形成用複合片之製造方法> 第二態樣之保護膜形成用複合片可藉由將構成保護膜形成用複合片之各層以成為對應位置關係之方式依序積層而製造。各層可依據上述[保護膜形成用膜之製作方法]而形成。 具體而言,例如可於積層於基材之黏著劑層的表面塗佈保護膜形成用樹脂組成物,於黏著劑層上形成保護膜形成用膜,亦可於剝離膜之剝離處理表面上預先形成保護膜形成用膜,將該保護膜形成用膜之露出面與積層於基材上之黏著劑層之表面貼合,將保護膜形成用膜積層於黏著劑層上。 與於基材上積層黏著劑層之情況同樣,可將用以形成黏著劑層之組成物塗佈於基材的表面上,亦可將於剝離膜之剝離處理面上形成之黏著劑層之露出面與基材表面貼合後,去除剝離膜。第二態樣之保護膜形成用複合片具有中間層等之任意層時,亦依據上述方法於必要位置設置該任意層即可。 <Method for manufacturing composite sheet for forming protective film according to second aspect> The protective film-forming composite sheet of the second aspect can be produced by sequentially stacking the respective layers constituting the protective film-forming composite sheet so as to have a corresponding positional relationship. Each layer can be formed according to the above [Production method of film for protective film formation]. Specifically, for example, the protective film-forming resin composition may be coated on the surface of the adhesive layer laminated on the base material, and the protective film-forming film may be formed on the adhesive layer, or the release-treated surface of the release film may be preliminarily formed. A protective film-forming film is formed, the exposed surface of the protective film-forming film is bonded to the surface of the adhesive layer laminated on the base material, and the protective film-forming film is laminated on the adhesive layer. In the same manner as when an adhesive layer is laminated on a base material, the composition for forming the adhesive layer can be coated on the surface of the base material, or the adhesive layer formed on the peeling surface of the release film can be applied. After the exposed surface is bonded to the surface of the base material, remove the release film. When the composite sheet for forming a protective film of the second aspect has any layer such as an intermediate layer, the arbitrary layer may be provided at a necessary position according to the above method.

[附保護膜之半導體晶片] 本實施形態之附保護膜之半導體晶片係具有本實施形態之保護膜形成用膜之硬化物的保護膜的附保護膜之半導體晶片。 針對本實施形態之附保護膜之半導體晶片所具有之保護膜形成所用之保護膜形成用膜及由該保護膜形成用膜形成之保護膜以及半導體晶片之較佳態樣之說明如上述。 半導體晶片之俯視下之大小未特別限制,但較佳未達600mm 2,更佳未達400mm 2,又更佳未達300mm 2。又,所謂俯視係指於厚度方向觀察。 半導體晶片之俯視下之形狀可為方形,可為矩形等之細長形狀。 本實施形態之附保護膜之半導體晶片可藉由本實施形態之保護膜形成用膜之使用方法中說明之方法製造。 [Semiconductor Wafer with Protective Film] The semiconductor wafer with protective film of this embodiment is a semiconductor wafer with protective film having a protective film of a cured product of the film for forming a protective film of this embodiment. Preferable aspects of the protective film-forming film used for forming the protective film of the protective film-attached semiconductor wafer according to the present embodiment, the protective film formed from the protective film-forming film, and the semiconductor wafer are as described above. The size of the semiconductor wafer when viewed from above is not particularly limited, but it is preferably less than 600mm 2 , more preferably less than 400mm 2 , and more preferably less than 300mm 2 . In addition, the so-called plan view refers to the observation in the thickness direction. The semiconductor wafer may have a square shape when viewed from above, or may have an elongated shape such as a rectangle. The semiconductor wafer with a protective film of this embodiment can be produced by the method described in the method of using the film for forming a protective film of this embodiment.

[半導體裝置] 本實施形態之半導體裝置係具有本實施形態之附保護膜之半導體晶片的半導體裝置。 作為本實施形態之半導體裝置舉例為例如將本實施形態之附保護膜之半導體晶片覆晶連接於具有電路之基板上而成之半導體封裝等。 [實施例] [Semiconductor device] The semiconductor device of this embodiment is a semiconductor device having the semiconductor wafer with a protective film of this embodiment. An example of the semiconductor device of this embodiment is a semiconductor package in which the semiconductor chip with a protective film of this embodiment is flip-chip connected to a substrate having a circuit. [Example]

針對本發明藉由以下之實施例更具體說明,但本發明不限於以下實施例。The present invention will be described in more detail by the following examples, but the present invention is not limited to the following examples.

[質量平均分子量(Mw)] 係使用利用凝膠滲透層析裝置(Tosoh股份有限公司製,製品名「HLC-8320GPC」),在以下條件下測定並進行標準聚苯乙烯換算而測定之值。 (測定條件) ・管柱:「TSK防護管柱SuperH-H」、「TSK凝膠SuperHM-H」、「TSK凝膠SuperHM-H」、「TSK凝膠SuperH2000」(均為Tosoh股份有限公司製) ・管柱溫度:40℃ ・展開溶劑:四氫呋喃 ・流速:1.0mL/min [Mass average molecular weight (Mw)] It is a value measured using a gel permeation chromatography device (manufactured by Tosoh Co., Ltd., product name "HLC-8320GPC") under the following conditions and converted to standard polystyrene. (Measurement conditions) ・Column: "TSK protective column SuperH-H", "TSK gel SuperHM-H", "TSK gel SuperHM-H", "TSK gel SuperH2000" (all manufactured by Tosoh Co., Ltd.) ・Pipe string temperature: 40℃ ・Developing solvent: Tetrahydrofuran ・Flow rate: 1.0mL/min

[各層厚度] 使用TECLOCK股份有限公司製之定壓厚度測定器(型號:「PG-02J」,依據標準規格:JISK6783、Z1702、Z1709),在23℃下於任意5處測定厚度,算出測定值之平均值。 [Thickness of each layer] Using a constant pressure thickness measuring device manufactured by TECLOCK Co., Ltd. (Model: "PG-02J", based on standard specifications: JISK6783, Z1702, Z1709), measure the thickness at any 5 places at 23°C, and calculate the average of the measured values.

[磷原子比率之測定方法] 自各例所得之雙面附剝離膜之保護膜形成用片之兩面剝離剝離膜,對露出之表面進行X射線光電子分光分析(XPS),求出相對於碳原子、氮原子、氧原子、磷原子及矽原子之總數的磷原子數之比率。 XPS分析裝置係使用ULVAC Phi公司製,機種名「PHI Quantera SXM」,X射線源、X射線束徑、分析條件及分析元素峰如上述。 又測定係於保護膜形成用片之貼附有輕剝離膜之表面(以下亦稱為「輕剝離表面」)與貼附重剝離膜之表面(以下亦稱為「重剝離表面」)之兩表面,各於任意5處實施。算出各測定之磷原子比率,將其表面中最大值與最小值除外的3個值的平均值作為該表面之磷原子比率。 [Measurement method of phosphorus atom ratio] X-ray photoelectron spectroscopy (XPS) was performed on the exposed surface of the double-sided peelable film-forming sheet for forming a protective film with a peelable film obtained in each example to determine the relative density of carbon atoms, nitrogen atoms, oxygen atoms, and phosphorus atoms. And the ratio of the number of phosphorus atoms to the total number of silicon atoms. The XPS analysis device was manufactured by ULVAC Phi Co., Ltd., model name "PHI Quantera SXM", and the X-ray source, X-ray beam diameter, analysis conditions, and analysis element peaks were as described above. It is also measured on both the surface of the protective film forming sheet where the light peeling film is attached (hereinafter also referred to as the "light peeling surface") and the surface where the heavy peeling film is attached (hereinafter also referred to as the "heavy peeling surface") Surface, each implemented in any 5 places. The phosphorus atom ratio of each measurement was calculated, and the average of three values excluding the maximum value and the minimum value on the surface was used as the phosphorus atom ratio of the surface.

[銅箔剝離強度之測定方法] 自各例所得之雙面附剝離膜之保護膜形成用膜剝離輕剝離膜,將露出之保護膜形成用膜之表面,使用經加熱至70℃之輥層壓機貼附於矽晶圓片(具有2,000號研磨面之厚度350μm之矽晶圓)的研磨面上。其次,自與經貼附之保護膜形成用膜之與矽晶圓相反側之表面剝離重剝離膜,於露出之表面保護膜形成用膜的表面,使用經加熱至70℃之輥層壓機貼附長邊50mm×短邊10mm×厚度150μm之銅箔。此時,銅箔之長邊一端部10mm未貼附於保護膜形成用膜作為未貼附分而留下。其次,藉由於140℃加熱2小時使保護膜形成用膜熱硬化,形成矽晶圓、保護膜形成用膜之硬化物的保護膜及銅箔於該等之厚度方向積層之積層體,將其作為銅箔剝離強度之測定試料。 將上述所得之測定試料安裝於萬能拉伸試驗機(島津製作所股份有限公司製,商品名「AG-XPlus」),以夾捏具把持上述銅箔之未貼附部,以剝離速度50mm/min之條件,於90°方向剝離該銅箔,藉此取得銅箔剝離強度。 [Measurement method of copper foil peel strength] The protective film-forming film with a release film on both sides obtained in each example was peeled off and the exposed surface of the protective film-forming film was attached to a silicon wafer using a roller laminator heated to 70°C. The polishing surface of a 350μm thick silicon wafer with No. 2,000 polishing surface. Next, peel off the heavy release film from the surface of the attached protective film forming film opposite to the silicon wafer, and use a roll laminator heated to 70°C on the exposed surface of the surface protective film forming film. Attach a copper foil with a long side of 50mm×short side of 10mm×thickness of 150μm. At this time, 10 mm of one long side end portion of the copper foil was not attached to the protective film forming film and was left as an unattached portion. Next, the protective film-forming film is thermally cured by heating at 140° C. for 2 hours to form a laminate in which a silicon wafer, a protective film of a cured product of the protective film-forming film, and a copper foil are laminated in the thickness direction thereof. As a sample for measuring the peel strength of copper foil. The measurement sample obtained above was mounted on a universal tensile testing machine (manufactured by Shimadzu Corporation, trade name "AG-XPlus"), the unattached portion of the copper foil was held with a clamp, and the peeling speed was 50 mm/min. Under the conditions, the copper foil is peeled off in the 90° direction to obtain the copper foil peeling strength.

[難燃性之評價方法] 將各例所得之雙面附剝離膜之保護膜形成用膜藉由在140℃加熱2小時使保護膜形成用膜熱硬化,形成保護膜形成用膜之硬化物的保護膜,裁斷為長邊200mm×短邊50mm的大小,剝離該保護膜兩面的剝離膜。 所得保護膜於溫度23℃、相對濕度50%之環境下保存48小時後,將短邊方向捲繞於直徑12.7mm之圓筒狀棒,在距離長邊方向的一端部125mm的位置設置標線,將另一端部與上述標線之間之部分(75mm之部分)以膠帶固定,製作圓筒狀之保護膜後,抽出棒。 其次,將圓筒狀之保護膜,以由上述膠帶固定之側的端部作為上側,以不自該上側之端部漏出空氣之方式,將該端部壓潰為扁平成閉合狀態下,垂直安裝於夾具,依據美國保險商實驗室(Underwriters Laboratories:UL)定訂之UL94試驗(機器之零件用塑膠材料之燃燒性試驗)的UL94VTM測試(薄片材料垂直燃燒測試)進行接觸火焰試驗。具體而言,於距離圓筒狀保護膜下端10 mm的位置設置燃燒器的筒,於圓筒狀保護膜下端的中央進行20mm之藍色火焰的3秒中第1次接觸火焰試驗,於火焰熄滅時立即以相同條件進行的第2次之接觸火焰試驗,藉以下基準進行評價。 A:於第1次及第2次接觸火焰試驗中,火焰未到達標線(125mm)。 F:於第1次或第2次接觸火焰試驗中,火焰到達標線(125mm)。 [Evaluation method of flame retardancy] The protective film-forming film with a release film on both sides obtained in each example was heated at 140° C. for 2 hours to thermally cure the protective film-forming film to form a protective film of the cured product of the protective film-forming film, and then cut into long sides. The size of the protective film is 200mm x 50mm on the short side, and the peeling films on both sides of the protective film are peeled off. After the obtained protective film was stored for 48 hours in an environment with a temperature of 23°C and a relative humidity of 50%, the short side was wound on a cylindrical rod with a diameter of 12.7 mm, and a marking line was set at a position 125 mm from one end of the long side. , fix the part between the other end and the above-mentioned marking line (the 75mm part) with tape, make a cylindrical protective film, and then pull out the rod. Next, take the cylindrical protective film, with the end fixed by the tape as the upper side, and flatten the end so that air does not leak from the upper end, making it vertical in the closed state. Installed on the fixture, the contact flame test is performed in accordance with the UL94VTM test (vertical combustion test of sheet materials) specified by Underwriters Laboratories (UL) (Flamability Test of Plastic Materials for Machine Parts). Specifically, the burner barrel is placed 10 mm away from the lower end of the cylindrical protective film, and the first contact flame test of a 20 mm blue flame in 3 seconds is performed at the center of the lower end of the cylindrical protective film. The second contact flame test under the same conditions immediately after extinguishing is evaluated based on the following criteria. A: In the first and second contact flame tests, the flame did not reach the marking line (125mm). F: In the first or second contact flame test, the flame reaches the marking line (125mm).

[保護膜形成用膜之製造] 實施例1~6、比較例1~3 (保護膜形成用樹脂組成物之製造) 將表1所示之各成分依據表1記載之調配組成,溶解或分散於甲基乙基酮、甲苯及乙酸乙酯之混合溶劑中,藉由於23℃下攪拌,獲得固體成分濃度62質量%之保護膜形成用樹脂組成物。 [Manufacture of film for protective film formation] Examples 1 to 6, Comparative Examples 1 to 3 (Production of resin composition for protective film formation) Dissolve or disperse each component shown in Table 1 in a mixed solvent of methyl ethyl ketone, toluene and ethyl acetate according to the preparation composition described in Table 1, and obtain a solid content concentration of 62% by mass by stirring at 23°C. A resin composition for forming a protective film.

(保護膜形成用膜之製作) 將上述所得之保護膜形成用樹脂組成物使用刮刀塗佈器塗佈於重剝離膜(Lintec股份有限公司製,商品名「SP-PET502150」,以矽氧樹脂對厚度50μm之聚對苯二甲酸乙二酯製膜之單面進行剝離處理者)之剝離處理面上,於100℃乾燥2分鐘,於重剝離膜上形成厚度25μm之保護膜形成用膜。隨後,將輕剝離膜(Lintec股份有限公司製,商品名「SP-PET381130」,以矽氧樹脂對厚度38μm之聚對苯二甲酸乙二酯製膜之單面進行剝離處理者)之剝離處理面貼合於保護膜形成用膜上,製造具有由2片剝離膜夾持保護膜形成用膜之構成的兩面附剝離膜之保護膜形成用膜。 各例所得之保護膜形成用膜藉由上述所示之方法進行評價。結果示於表1。 (Preparation of film for protective film formation) The resin composition for forming a protective film obtained above was coated on a heavy release film (manufactured by Lintec Co., Ltd., trade name "SP-PET502150") using a doctor blade coater, and polyterephthalate with a thickness of 50 μm was coated with silicone resin. ((One side of the ethylene glycol film is peeled off)) The peeling surface is dried at 100°C for 2 minutes to form a protective film forming film with a thickness of 25 μm on the heavy peeling film. Subsequently, a light peeling film (manufactured by Lintec Co., Ltd., trade name "SP-PET381130", one side of a polyethylene terephthalate film with a thickness of 38 μm is peeled with silicone resin) was peeled off. The protective film-forming film is bonded to the protective film-forming film on both sides to produce a protective film-forming film having a structure in which the protective film-forming film is sandwiched between two pieces of release film and having release films on both sides. The film for protective film formation obtained in each example was evaluated by the method shown above. The results are shown in Table 1.

又,表1所示之各成分細節如下。 <(A)熱塑性樹脂> 由85質量份丙烯酸甲酯及15質量份丙烯酸2-羥乙酯共聚合而得之丙烯酸樹脂(質量平均分子量(Mw):37萬,玻璃轉移溫度:6℃)。 In addition, the details of each component shown in Table 1 are as follows. <(A) Thermoplastic resin> Acrylic resin (mass average molecular weight (Mw): 370,000, glass transition temperature: 6°C) obtained by copolymerizing 85 parts by mass of methyl acrylate and 15 parts by mass of 2-hydroxyethyl acrylate.

<(B)熱硬化性樹脂> (B)-1:二環戊二烯型環氧樹脂(DIC股份有限公司製,商品名「Epiclone HP-7200HH」,環氧當量255~260 g/eq) (B)-2:雙酚A型環氧樹脂(三菱化學股份有限公司製,商品名「jER1055」,環氧當量800~900g/eq) (B)-3:雙酚A型環氧樹脂(三菱化學股份有限公司製,商品名「jER828」,環氧當量184~194g/eq) <(B)Thermosetting resin> (B)-1: Dicyclopentadiene-type epoxy resin (manufactured by DIC Co., Ltd., trade name "Epiclone HP-7200HH", epoxy equivalent 255~260 g/eq) (B)-2: Bisphenol A type epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., trade name "jER1055", epoxy equivalent 800~900g/eq) (B)-3: Bisphenol A type epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., trade name "jER828", epoxy equivalent 184~194g/eq)

<(C)無機填充材> 球狀氧化矽(Admatex股份有限公司製,商品名「SC2050MA」,平均粒徑(D 50)0.5μm) <(C) Inorganic filler> Spherical silicon oxide (manufactured by Admatex Co., Ltd., trade name "SC2050MA", average particle diameter (D 50 ) 0.5 μm)

<(D)難燃劑> 六苯氧基環三磷腈(以下述式(D-2)表示之化合物,相當於(D1)成分) <(D)Flame retardant> Hexaphenoxycyclotriphosphazene (compound represented by the following formula (D-2), equivalent to component (D1))

<(E)硬化促進劑> 2-苯基-4,5-二羥基甲基咪唑 <(E) Hardening accelerator> 2-Phenyl-4,5-dihydroxymethylimidazole

<(F)著色劑> 碳黑 <(F) Colorant> carbon black

<(G)環氧樹脂硬化劑> 雙氰胺型潛在性硬化劑(ADEKA股份有限公司製,商品名「ADEKA Hardner EH-3636AS」,活性氫當量21g/eq) <(G) Epoxy resin hardener> Dicyandiamide type latent hardener (manufactured by ADEKA Co., Ltd., trade name "ADEKA Hardner EH-3636AS", active hydrogen equivalent 21g/eq)

<(H)交聯劑> 三羥甲基丙烷之甲苯二異氰酸酯加成物 <(H) Cross-linking agent> Toluene diisocyanate adduct of trimethylolpropane

<(I)偶合劑> 3-縮水甘油氧基丙基三甲氧基矽烷 <(I) Coupling agent> 3-glycidoxypropyltrimethoxysilane

由表1可知,由實施例1~6之保護膜形成用膜形成之保護膜兼具難燃性及接著性。另一方面,由比較例1~3之保護膜形成用膜形成之保護膜之難燃性及接著性之任一者較差。As can be seen from Table 1, the protective films formed from the protective film-forming films of Examples 1 to 6 have both flame retardancy and adhesiveness. On the other hand, the protective films formed from the protective film-forming films of Comparative Examples 1 to 3 were inferior in both flame retardancy and adhesiveness.

1,1A,1B:保護膜形成用複合片 10:保護膜形成用膜 10a,10b:保護膜形成用膜之剝離膜側的表面 11:剝離膜 111:第1剝離膜 112:第2剝離膜 12:基材 13:黏著劑層 13a:黏著劑層之保護膜形成用膜側的表面 14:治具用接著劑層 14a:治具接著劑層之剝離膜側的表面 1,1A,1B: Composite sheet for protective film formation 10: Film for protective film formation 10a, 10b: Surface of the peeling film side of the protective film forming film 11: Peel off film 111: 1st peeling film 112: 2nd peeling film 12:Substrate 13:Adhesive layer 13a: Surface of the protective film forming side of the adhesive layer 14: Adhesive layer for fixtures 14a: Surface of the peeling film side of the jig adhesive layer

[圖1]係顯示本發明第一態樣之保護膜形成用複合片之構成的一例之示意剖面圖。 [圖2]係顯示本發明第二態樣之保護膜形成用複合片之構成的一例之示意剖面圖。 [圖3]係顯示本發明第二態樣之保護膜形成用複合片之構成的另一例之示意剖面圖。 [Fig. 1] is a schematic cross-sectional view showing an example of the structure of the composite sheet for forming a protective film according to the first aspect of the present invention. [Fig. 2] is a schematic cross-sectional view showing an example of the structure of the composite sheet for forming a protective film according to the second aspect of the present invention. [Fig. 3] is a schematic cross-sectional view showing another example of the structure of the composite sheet for forming a protective film according to the second aspect of the present invention.

1:保護膜形成用複合片 1: Composite sheet for protective film formation

10:保護膜形成用膜 10: Film for protective film formation

10a,10b:保護膜形成用膜之剝離膜側的表面 10a, 10b: Surface of the peeling film side of the protective film forming film

111:第1剝離膜 111: 1st peeling film

112:第2剝離膜 112: 2nd peeling film

Claims (13)

一種保護膜形成用膜,其具有硬化性, 將前述保護膜形成用膜之至少一表面藉由X射線光電子分光分析法進行分析,藉此檢驗出相對於碳原子、氮原子、氧原子、磷原子及矽原子的總數之磷原子數的比率為0.4原子%以上, 前述保護膜形成用膜之硬化物之銅箔剝離強度為3.0N/10mm以上。 A film for forming a protective film, which has curability, At least one surface of the protective film-forming film is analyzed by X-ray photoelectron spectroscopy, thereby examining the ratio of the number of phosphorus atoms to the total number of carbon atoms, nitrogen atoms, oxygen atoms, phosphorus atoms and silicon atoms. is 0.4 atomic % or more, The copper foil peeling strength of the cured product of the protective film forming film is 3.0 N/10mm or more. 如請求項1之保護膜形成用膜,其中前述磷原子數之比率為0.4原子%以上的表面之磷原子數的比率為5.0原子%以下。The film for forming a protective film according to claim 1, wherein the ratio of the number of phosphorus atoms on the surface is 0.4 atomic % or more and the phosphorus atomic number ratio on the surface is 5.0 atomic % or less. 如請求項1或2之保護膜形成用膜,其中前述保護膜形成用膜之一表面中之前述磷原子數之比率[X]、與前述保護膜形成用膜之另一表面中之前述磷原子數之比率[Y]之比[X/Y]為0.7~1.4。The film for protective film formation as claimed in claim 1 or 2, wherein the ratio [X] of the number of the aforementioned phosphorus atoms in one surface of the aforementioned protective film formation film is proportional to the ratio [X] of the aforementioned number of phosphorus atoms in the other surface of the aforementioned protective film formation film. The ratio of the number of atoms [Y] to the ratio [X/Y] is 0.7~1.4. 如請求項1或2之保護膜形成用膜,其中前述保護膜形成用膜具有熱硬化性。The protective film forming film according to claim 1 or 2, wherein the protective film forming film has thermosetting properties. 如請求項1或2之保護膜形成用膜,其係使用含有(A)熱塑性樹脂與(B)熱硬化性樹脂之樹脂組成物而形成。The film for forming a protective film according to claim 1 or 2 is formed using a resin composition containing (A) a thermoplastic resin and (B) a thermosetting resin. 如請求項5之保護膜形成用膜,其中前述(A)熱塑性樹脂為丙烯酸樹脂。The film for forming a protective film according to claim 5, wherein the thermoplastic resin (A) is an acrylic resin. 如請求項5之保護膜形成用膜,其中前述(B)熱硬化性樹脂為環氧樹脂。The film for forming a protective film according to claim 5, wherein the thermosetting resin (B) is an epoxy resin. 如請求項1或2之保護膜形成用膜,其厚度為1~100μm。For example, the film for forming a protective film according to claim 1 or 2 has a thickness of 1 to 100 μm. 如請求項1或2之保護膜形成用膜,其貼附於半導體晶圓之背面,使用於附保護膜之半導體晶片之製造。For example, the film for forming a protective film according to claim 1 or 2 is attached to the back surface of a semiconductor wafer and used in the manufacture of a semiconductor wafer with a protective film. 一種保護膜形成用複合片,其具有:將如請求項1或2之保護膜形成用膜夾持於2枚剝離膜而成的構成。A protective film-forming composite sheet having a structure in which the protective film-forming film according to claim 1 or 2 is sandwiched between two release films. 一種保護膜形成用複合片,其依序具有基材、黏著劑層、與如請求項1或2之保護膜形成用膜。A composite sheet for forming a protective film, which has a base material, an adhesive layer, and the film for forming a protective film according to claim 1 or 2 in this order. 一種附保護膜之半導體晶片,其具有作為如請求項1或2之保護膜形成用膜的硬化物之保護膜。A semiconductor wafer with a protective film having a protective film that is a cured product of the film for forming a protective film according to claim 1 or 2. 一種半導體裝置,其具有如請求項12之附保護膜之半導體晶片。A semiconductor device having a semiconductor wafer with a protective film according to claim 12.
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