TW202343638A - 用於半導體處理之晶圓定位底座中的墊升高機構 - Google Patents
用於半導體處理之晶圓定位底座中的墊升高機構 Download PDFInfo
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- TW202343638A TW202343638A TW112125172A TW112125172A TW202343638A TW 202343638 A TW202343638 A TW 202343638A TW 112125172 A TW112125172 A TW 112125172A TW 112125172 A TW112125172 A TW 112125172A TW 202343638 A TW202343638 A TW 202343638A
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- 230000007246 mechanism Effects 0.000 title claims abstract description 131
- 238000012545 processing Methods 0.000 title claims description 245
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title abstract description 50
- 239000004065 semiconductor Substances 0.000 title description 9
- 238000000034 method Methods 0.000 claims abstract description 82
- 230000008569 process Effects 0.000 claims abstract description 64
- 238000006073 displacement reaction Methods 0.000 claims abstract description 31
- 230000033001 locomotion Effects 0.000 claims description 180
- 239000012636 effector Substances 0.000 claims description 30
- 230000007935 neutral effect Effects 0.000 claims description 20
- 238000000151 deposition Methods 0.000 abstract description 27
- 235000012431 wafers Nutrition 0.000 description 276
- 230000005294 ferromagnetic effect Effects 0.000 description 65
- 239000000758 substrate Substances 0.000 description 57
- 239000010408 film Substances 0.000 description 37
- 238000000231 atomic layer deposition Methods 0.000 description 32
- 239000007789 gas Substances 0.000 description 31
- 229910052594 sapphire Inorganic materials 0.000 description 30
- 239000010980 sapphire Substances 0.000 description 30
- 239000011248 coating agent Substances 0.000 description 25
- 238000000576 coating method Methods 0.000 description 25
- 230000008878 coupling Effects 0.000 description 19
- 238000010168 coupling process Methods 0.000 description 19
- 238000005859 coupling reaction Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 19
- 238000009826 distribution Methods 0.000 description 17
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 15
- 238000012546 transfer Methods 0.000 description 15
- 238000013459 approach Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000000926 separation method Methods 0.000 description 12
- 241000239290 Araneae Species 0.000 description 11
- 238000001816 cooling Methods 0.000 description 11
- 239000002243 precursor Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 238000004590 computer program Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000037361 pathway Effects 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 230000000284 resting effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002987 primer (paints) Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BOTUVXISJHKZKJ-UHFFFAOYSA-N 1-benzothiophen-4-yl n-methylcarbamate Chemical compound CNC(=O)OC1=CC=CC2=C1C=CS2 BOTUVXISJHKZKJ-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Automation & Control Theory (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Jigs For Machine Tools (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/291,549 US9892956B1 (en) | 2016-10-12 | 2016-10-12 | Wafer positioning pedestal for semiconductor processing |
US15/291,549 | 2016-10-12 | ||
US15/366,927 | 2016-12-01 | ||
US15/366,927 US10573549B2 (en) | 2016-12-01 | 2016-12-01 | Pad raising mechanism in wafer positioning pedestal for semiconductor processing |
US15/367,903 | 2016-12-02 | ||
US15/367,903 US9960068B1 (en) | 2016-12-02 | 2016-12-02 | Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202343638A true TW202343638A (zh) | 2023-11-01 |
Family
ID=61906003
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW112125172A TW202343638A (zh) | 2016-10-12 | 2017-10-12 | 用於半導體處理之晶圓定位底座中的墊升高機構 |
TW106134847A TWI758337B (zh) | 2016-10-12 | 2017-10-12 | 用於半導體處理之晶圓定位底座中的墊升高機構 |
TW111104292A TWI810807B (zh) | 2016-10-12 | 2017-10-12 | 用於半導體處理之晶圓定位底座中的墊升高機構 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106134847A TWI758337B (zh) | 2016-10-12 | 2017-10-12 | 用於半導體處理之晶圓定位底座中的墊升高機構 |
TW111104292A TWI810807B (zh) | 2016-10-12 | 2017-10-12 | 用於半導體處理之晶圓定位底座中的墊升高機構 |
Country Status (4)
Country | Link |
---|---|
KR (3) | KR102584339B1 (ko) |
CN (2) | CN114121769A (ko) |
TW (3) | TW202343638A (ko) |
WO (1) | WO2018071598A1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7023826B2 (ja) * | 2018-12-07 | 2022-02-22 | 株式会社ニューフレアテクノロジー | 連続成膜方法、連続成膜装置、サセプタユニット、及びサセプタユニットに用いられるスペーサセット |
CN111033682B (zh) * | 2019-11-27 | 2021-11-02 | 重庆康佳光电技术研究院有限公司 | 一种半导体真空处理设备及处理半导体的方法 |
TWI747281B (zh) * | 2020-05-11 | 2021-11-21 | 大陸商蘇州雨竹機電有限公司 | 薄膜沉積旋轉盤系統 |
CN113299585B (zh) * | 2021-07-26 | 2021-11-12 | 武汉中导光电设备有限公司 | 一种用于晶圆检测的Z-Theta组合装置 |
CN116479411B (zh) * | 2023-04-27 | 2024-03-12 | 大连皓宇电子科技有限公司 | 一种化学气相沉积设备用的多工位硅片搬运装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3803411A1 (de) * | 1988-02-05 | 1989-08-17 | Leybold Ag | Vorrichtung zur halterung von werkstuecken |
JPH0851141A (ja) * | 1994-08-08 | 1996-02-20 | Kokusai Electric Co Ltd | ペディスタル回転上下動機構 |
US5899653A (en) * | 1997-06-23 | 1999-05-04 | Applied Materials, Inc. | Two-stage vacuum bellows |
US6223447B1 (en) * | 2000-02-15 | 2001-05-01 | Applied Materials, Inc. | Fastening device for a purge ring |
US8308931B2 (en) * | 2006-08-16 | 2012-11-13 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US20020025244A1 (en) * | 2000-04-12 | 2002-02-28 | Kim Ki-Sang | Transfer system and apparatus for workpiece containers and method of transferring the workpiece containers using the same |
KR100578741B1 (ko) * | 2004-04-30 | 2006-05-12 | 주식회사 씨싸이언스 | 웨이퍼 식각 및 정렬장치 |
US20060281310A1 (en) * | 2005-06-08 | 2006-12-14 | Applied Materials, Inc. | Rotating substrate support and methods of use |
KR101841753B1 (ko) * | 2006-08-18 | 2018-03-23 | 브룩스 오토메이션 인코퍼레이티드 | 용량이 축소된 캐리어, 이송, 로드 포트, 버퍼 시스템 |
JP5835722B2 (ja) * | 2009-12-10 | 2015-12-24 | オルボテック エルティ ソラー,エルエルシー | 自動順位付け多方向直列型処理装置 |
KR101839904B1 (ko) * | 2010-03-25 | 2018-03-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 다중 기판 프로세싱을 위한 세그먼트화된 기판 로딩 |
KR101259930B1 (ko) * | 2010-12-13 | 2013-05-02 | 주식회사 싸이맥스 | 웨이퍼 얼라인 장치 |
KR101273635B1 (ko) * | 2011-03-09 | 2013-06-17 | 주식회사 탑 엔지니어링 | 척 구조체 및 이를 이용한 반도체 기판 처리 장치 |
US9337067B2 (en) * | 2011-05-13 | 2016-05-10 | Novellus Systems, Inc. | High temperature electrostatic chuck with radial thermal chokes |
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KR101710770B1 (ko) * | 2012-05-18 | 2017-02-27 | 비코 인스트루먼츠 인코포레이티드 | 화학적 기상 증착을 위한 페로플루이드 밀봉부를 갖는 회전 디스크 리액터 |
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2017
- 2017-10-11 KR KR1020227037382A patent/KR102584339B1/ko active IP Right Grant
- 2017-10-11 CN CN202110945833.5A patent/CN114121769A/zh active Pending
- 2017-10-11 KR KR1020237032964A patent/KR20230141940A/ko active Application Filing
- 2017-10-11 CN CN201780076693.4A patent/CN110062816B/zh active Active
- 2017-10-11 KR KR1020197013676A patent/KR102461066B1/ko active IP Right Grant
- 2017-10-11 WO PCT/US2017/056225 patent/WO2018071598A1/en active Application Filing
- 2017-10-12 TW TW112125172A patent/TW202343638A/zh unknown
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Also Published As
Publication number | Publication date |
---|---|
TWI810807B (zh) | 2023-08-01 |
KR102461066B1 (ko) | 2022-10-28 |
KR20190057404A (ko) | 2019-05-28 |
WO2018071598A1 (en) | 2018-04-19 |
CN114121769A (zh) | 2022-03-01 |
KR20220147730A (ko) | 2022-11-03 |
KR20230141940A (ko) | 2023-10-10 |
TW201833371A (zh) | 2018-09-16 |
CN110062816A (zh) | 2019-07-26 |
KR102584339B1 (ko) | 2023-09-27 |
TWI758337B (zh) | 2022-03-21 |
CN110062816B (zh) | 2021-09-07 |
TW202224071A (zh) | 2022-06-16 |
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