TW202341506A - 電極組件 - Google Patents
電極組件 Download PDFInfo
- Publication number
- TW202341506A TW202341506A TW111147424A TW111147424A TW202341506A TW 202341506 A TW202341506 A TW 202341506A TW 111147424 A TW111147424 A TW 111147424A TW 111147424 A TW111147424 A TW 111147424A TW 202341506 A TW202341506 A TW 202341506A
- Authority
- TW
- Taiwan
- Prior art keywords
- solar cell
- conductive element
- electrode assembly
- conductive
- solar
- Prior art date
Links
- 238000000576 coating method Methods 0.000 claims abstract description 63
- 239000011248 coating agent Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 210000004027 cell Anatomy 0.000 description 348
- 239000010408 film Substances 0.000 description 70
- 239000012528 membrane Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 15
- 230000004323 axial length Effects 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 239000003973 paint Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 9
- 229910001092 metal group alloy Inorganic materials 0.000 description 9
- 239000011888 foil Substances 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 239000000956 alloy Substances 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229920000297 Rayon Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002964 rayon Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000005779 cell damage Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 208000037887 cell injury Diseases 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2119065.7 | 2021-12-29 | ||
| GBGB2119065.7A GB202119065D0 (en) | 2021-12-29 | 2021-12-29 | An electrode assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202341506A true TW202341506A (zh) | 2023-10-16 |
Family
ID=80111780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111147424A TW202341506A (zh) | 2021-12-29 | 2022-12-09 | 電極組件 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20250072124A1 (https=) |
| EP (1) | EP4457872A1 (https=) |
| JP (1) | JP2024545910A (https=) |
| KR (1) | KR20240125675A (https=) |
| CN (1) | CN118476037A (https=) |
| AU (1) | AU2022429986A1 (https=) |
| GB (1) | GB202119065D0 (https=) |
| TW (1) | TW202341506A (https=) |
| WO (1) | WO2023126151A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1947703B1 (en) * | 2005-10-14 | 2019-08-14 | Sharp Kabushiki Kaisha | Interconnector, solar battery string using such interconnector |
| KR101694553B1 (ko) * | 2011-01-05 | 2017-01-09 | 엘지전자 주식회사 | 태양 전지 모듈 |
| KR101427000B1 (ko) * | 2012-10-09 | 2014-08-07 | 주식회사 산코코리아 | 태양전지 셀 연결부재 및 이의 제조방법, 태양전지 셀 연결부재 제조장치 |
| KR102107209B1 (ko) * | 2013-03-18 | 2020-05-06 | 엘지전자 주식회사 | 인터커넥터 및 이를 구비한 태양전지 모듈 |
| WO2014155413A1 (ja) * | 2013-03-25 | 2014-10-02 | 三洋電機株式会社 | タブ線の製造方法 |
-
2021
- 2021-12-29 GB GBGB2119065.7A patent/GB202119065D0/en not_active Ceased
-
2022
- 2022-12-09 US US18/725,566 patent/US20250072124A1/en active Pending
- 2022-12-09 AU AU2022429986A patent/AU2022429986A1/en active Pending
- 2022-12-09 JP JP2024539519A patent/JP2024545910A/ja active Pending
- 2022-12-09 KR KR1020247025293A patent/KR20240125675A/ko active Pending
- 2022-12-09 WO PCT/EP2022/085155 patent/WO2023126151A1/en not_active Ceased
- 2022-12-09 EP EP22835305.8A patent/EP4457872A1/en active Pending
- 2022-12-09 CN CN202280086993.1A patent/CN118476037A/zh active Pending
- 2022-12-09 TW TW111147424A patent/TW202341506A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU2022429986A1 (en) | 2024-06-06 |
| EP4457872A1 (en) | 2024-11-06 |
| KR20240125675A (ko) | 2024-08-19 |
| JP2024545910A (ja) | 2024-12-13 |
| WO2023126151A1 (en) | 2023-07-06 |
| CN118476037A (zh) | 2024-08-09 |
| US20250072124A1 (en) | 2025-02-27 |
| GB202119065D0 (en) | 2022-02-09 |
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