TW202341318A - Chip periphery peeling apparatus, chip supply apparatus, chip supply system, chip bonding system, pickup apparatus, chip periphery peeling method, chip supply method, chip bonding method, and pickup method - Google Patents

Abstract

A chip periphery peeling apparatus (50) comprises: a frame support unit (521) that supports an annular frame (RI2, RI3) on which a sheet (TE) having a plurality of chips (CP) affixed thereto is fixed; and a chip periphery peeling unit (57) that makes both peripheral ends of each of the plurality of chips (CP) opposite each other across at least the center of each of the plurality of chips (CP) affixed to the sheet (TE) more readily peelable from the sheet (TE) compared to the center.

Description

Wafer peripheral peeling device, wafer supply device, wafer supply system, wafer bonding system, pickup device, wafer peripheral peeling method, wafer supply method, wafer bonding method and pickup method

The present invention relates to a wafer peripheral peeling device, a wafer supply device, a wafer supply system, a wafer bonding system, a pickup device, a wafer peripheral peeling method, a wafer supply method, a wafer bonding method, and a pickup method.

There is a proposal that includes a wafer ring that holds a film attached to the wafer, a pusher, and a tray that holds the wafer. The pusher is placed close to the top of the wafer ring, and the tray is placed close to the bottom of the wafer ring. , moves the pusher downward to push the wafer from the film side, and transfers the wafer to the wafer transfer device in the recess of the tray (see, for example, Patent Document 1). [Advanced technical documents] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2005-277009

[Problem to be solved by the invention]

However, in the case of the wafer transfer device described in Patent Document 1, especially when the wafer becomes thinner or the size of the wafer becomes larger, when the wafer is pressed with the pusher, the wafer peels off from the film. The end of the wafer bounces back, so during dicing, particles such as cutting powder adhering to the end surface of the wafer may be scattered to the bonding surfaces of the surrounding wafers. In addition, the wafer is greatly deflected, thereby exerting excessive stress on the wafer, and the peripheral portion of the wafer may be damaged.

The present invention was developed in view of the above-mentioned circumstances, and an object thereof is to provide a wafer peripheral peeling device, a wafer supply device, and a wafer supply system that can prevent particles attached to the end surface of a wafer from scattering to the bonding surfaces of surrounding wafers. , wafer bonding system, pick-up device, wafer peripheral peeling method, wafer supply method, wafer bonding method and pick-up method. [Means used to solve problems]

In order to achieve the above object, the wafer peripheral peeling device of the present invention includes: The frame support portion supports and fixes an annular frame to which a dicing substrate or a plurality of wafer sheets are adhered, and the dicing substrate has a plurality of wafer formation areas formed by dicing as a basis for the plurality of wafers. The plurality of wafers are formed as portions between domains; and In the wafer peripheral peeling part, the central part of the plurality of wafer formation areas in the dicing substrate or the central part of the plurality of individual wafers is adhered to the sheet body, and clamps the plurality of individual wafer formation areas. The central portion or at least the central portion among the peripheral portions of the plurality of individual wafers has two opposite end portions, which are in a state that is easier to peel off from the sheet body than the central portion.

From another viewpoint, the wafer peripheral peeling method of the present invention includes a peripheral peeling step. In the peripheral peeling process, in the state of supporting and fixing the annular frame with the sheet body to which the dicing substrate or the plurality of wafers are adhered, the individual central portions or the plurality of wafer formation areas in the dicing substrate are The central portion of each of the plurality of wafers is adhered to the sheet body, and at least the central portion of the respective central portions of the plurality of wafer formation areas or the peripheral portions of the plurality of individual wafers is sandwiched between the two opposite end portions , compared with the central portion, it is in a state that is easier to peel off from the sheet body. The dicing substrate has a plurality of wafer formation areas that form the basis of the plurality of wafers. The wafer is formed as a portion between the domains. [Invention effect]

According to the present invention, the central portion of each of the plurality of wafer formation areas or the central portions of each of the plurality of wafers in the dicing substrate is adhered to the sheet body, and the central portion of each of the plurality of wafer formation areas or the respective central portions of the plurality of wafers is sandwiched. At least the central portion of the peripheral portion and the opposite end portions are in a state of being peeled off from the sheet body. In this way, the end portion of each of the plurality of wafers has been peeled off, so even if the wafer is thin, it can be suppressed that the end portion of the wafer rebounds and adheres to the end surface of the wafer particles when peeled off from the wafer body. The matter of chips flying around. In addition, especially when the thickness of the wafer is thin, it is easier to break when the wafer is detached from the wafer body, and it is more difficult to detach the wafer from the wafer body. On the other hand, according to the present invention, when the wafer is detached from the wafer body, the end portion of the wafer can be in a state of being peeled off in advance, so that when detaching each of the plurality of wafers from the wafer body, this part , can reduce the stress exerted on each of the plurality of wafers. Therefore, when each of the plurality of wafers is detached from the chip body, excessive stress can be suppressed from being applied to the wafer, and damage to the wafer caused by excessive stress is suppressed.

[Form used to implement the invention]

(Embodiment 1) Hereinafter, the wafer bonding system according to the embodiment of the present invention will be described with reference to the drawings. The chip bonding system of this embodiment is a system for mounting chips on a substrate. The wafer is, for example, a semiconductor wafer obtained by dividing a diced substrate into individual pieces, in which an electrode portion and an insulating portion are formed on the same joint surface. This chip bonding system performs an activation treatment on the mounting surface where the chip is mounted on the substrate and the bonding surface of the chip, and then makes the chip contact the substrate or pressurize it to bond them. Then, or simultaneously, it is heated, thereby firmly bonding the wafer to the substrate. Furthermore, the wafer bonding system of this embodiment includes a wafer peripheral portion peeling device for peeling off the peripheral portion of the wafer from the wafer body. This wafer peripheral peeling device includes: a frame support part, which supports and fixes an annular frame with a sheet body adhered to a dicing substrate, and the dicing substrate has a plurality of wafer forming areas that serve as the basis of the wafer. The substrate is formed as a portion between the plurality of wafer forming areas; and the wafer peripheral peeling portion, the central portions of each of the plurality of wafers are adhered to the sheet body, and at least one of the central portions of each of the plurality of wafers is clamped by two opposite sides. The end portion is in a state where it is easier to peel off from the sheet body than the central portion.

As shown in FIG. 1 , the wafer bonding system 1 of this embodiment includes a wafer supply device 10 , a wafer transfer device 39 , a wire bonding device 30 , a wafer peripheral peeling device 50 , an activation treatment device 60 , a transfer device 70 , and a loading and unloading unit. 80. Cleaning device 85 and control unit 90. The transfer device 70 has a transfer robot 71, and the transfer robot 71 has an arm that grasps and fixes the annular frames RI1, RI2, and RI3 on which the wafer TE to which the dicing substrate WD or the wafer CP is adhered is fixed. Here, the wafer CP, for example, as shown in FIG. 2 , is formed such that the electrode portion PC and the insulating portion PI are flush with each other in the same joint surface CPf. Here, "flush with each other" means that there is no step between the electrode portion PC and the insulating portion PI, and the Ra of the joint surface CPf is 1 μm or less. Furthermore, the insulating part is formed of, for example, oxides such as SiO ₂ and Al ₂ O ₃ , nitrides such as SiN and AlN, oxynitrides such as SiON, or an insulating material such as plastic with electrical insulation. Moreover, the electrode part is formed of a semiconductor material such as Si or Ge, or a metal-like conductive material such as Cu, Al, or solder material. Furthermore, the sheet body TE is formed of, for example, plastic, and is coated with an adhesive that reduces the adhesive force when the surface side in the thickness direction to which the chip CP is adhered is irradiated with ultraviolet light. Furthermore, the dicing substrate WD or the divided dicing substrate WD is a plurality of wafers CP obtained by dividing the wafers into individual wafers, and their opposite sides to the bonding surface side are adhered to the chip body TE by an adhesive.

The transfer robot 71 , as shown by the arrow AR11 in FIG. 1 , enables the annular frame RI1 or the annular frames RI2 and RI3 to hold the wafer TE to which the substrate WT or the wafer CP received from the transfer unit 80 is adhered. Move to the positions where they are respectively transferred to the activation processing device 60, the cleaning device 85, the wire bonding device 30, and the wafer supply device 10. Here, the annular frames RI1, RI2, and RI3 are equivalent to the annular frames to which the sheet TE is fixed. When the transfer robot 71 receives the substrate WT from the loading/unloading unit 80 , it grabs the received substrate WT and moves to a position where it is transferred to the activation processing device 60 , and transfers the substrate WT to the activation processing device 60 . Furthermore, the transfer robot 71 receives the substrate WT from the activation processing device 60 after completing the activation processing on the mounting surface WTf of the substrate WT in the activation processing device 60 , and transfers the received substrate WT to the cleaning device 85 . In addition, the transport robot 71 receives the substrate WT from the cleaning device 85 after the water cleaning of the substrate WT is completed in the cleaning device 85, and reverses the substrate while grabbing the received substrate WT. After WT, it moves to the position where it is transferred to the wiring device 30 . Furthermore, the transfer robot 71 transfers the substrate WT to the wire bonding device 30 .

Furthermore, when the transport robot 71 receives the annular frame RI1 in which the sheet TE to which the diced substrate WD has been adhered is fixed from the unloading and unloading unit 80, it grabs the received annular frame RI1. In this state, the annular frame RI1 is moved to a position where it is transferred to the activation treatment device 60 , and the annular frame RI1 is transferred to the activation treatment device 60 . In addition, the transfer robot 71 receives the annular frame RI1 from the activation processing device 60 after completing the activation processing of the joint surface of the wafer CP adhered to the chip body TE in the activation processing device 60, and transfers the received ring The frame RI1 moves toward the loading and unloading unit 80 . Thereafter, when the transfer robot 71 receives the annular frames RI2 and RI3 in which the wafer TE is fixed with a plurality of wafers CP adhered to each other from the unloading and unloading unit 80, it grabs the received In the state behind the annular frames RI2 and RI3, the annular frame RI2 is moved to a position where it is transferred to the wafer supply device 10, and the annular frame RI2 is transferred to the wafer supply device 10. In addition, a HEPA (High Efficiency Particulate Air) filter (not shown), for example, is provided in the transport device 70 . Thereby, the inside of the conveying device 70 becomes an atmospheric pressure environment with very few particles.

The activation treatment device 60 activates the portion of the dicing substrate WD adhered to the body TE that becomes the joint surface of the wafer CP. This dicing substrate WD is formed by dicing the portion between the plurality of wafer formation areas of the substrate on which the plurality of wafer formation areas that serve as the basis of the plurality of wafers CP are formed. The activation treatment device 60, as shown in FIG. 3, has a cavity 64, a frame support part 621 that supports an annular frame RI1 that holds the sheet TE, a sheet support part 612 formed of a conductive material, and a sheet support part 612. The support portion 612 is opposite to the electrode 613 arranged. In addition, the activation treatment device 60 has: a wafer support driving part 6121 that drives the wafer support 612 in the direction shown by arrow AR20; a cover 622; a plasma generating part 615; and a gas supply part 677, which passes through the supply pipe. 676. Supply nitrogen gas into the cavity 64. The chamber 64 is connected to the vacuum pump 652 through the exhaust pipe 651 . Moreover, when the vacuum pump 652 is activated, the gas in the cavity 64 is discharged out of the cavity 64 through the exhaust pipe 651, and the air pressure in the cavity 64 is reduced (decompressed). The plasma generating part 615 has a high-frequency power supply 611 and a matching unit 614, and applies a high-frequency bias voltage between the chip support part 612 and the electrode 613, thereby, between the chip support part 612 and the electrode 613, Plasma PLM is generated. As the high-frequency power supply 611, for example, a power supply that generates a high frequency of 13.56 MHz can be used. The plasma generating unit 615 generates plasma PLM near the dicing substrate DW adhered to the chip body TE, whereby ions with kinetic energy repeatedly collide with the portion of the dicing substrate DW that becomes the joint surface of the wafer CP. , and the part that becomes the joint surface is activated.

The cover 622, which is formed of, for example, glass, covers and removes the adhered wafers CP from the side of the wafer TE from the side of the wafer TE that is supported by the wafer support portion 612. Parts of parts of a plurality of chips CP. Here, when the plurality of wafers CP are diced on the dicing substrate WD which is circular in plan view, they are in a state of being adhered to the circular area in plan view in the body TE. In this case, the cover 622 has a shape that covers an area outside a circular area in a plan view in the body TE to which a plurality of wafers CP are adhered. Here, in the annular frame RI1, first, the portion of the sheet body TE to which the dicing substrate DW is adhered is disposed in a state of being spaced downward from the cover 622. After that, the wafer support part driving part 6121 pushes up the wafer support part 612 in a direction close to the cover 622 , whereby the dicing substrate DW is arranged inside the cover 622 . Thereby, it is possible to suppress the removal of the portion of the wafer body TE to which the dicing substrate DW is adhered and exposure to the plasma PLM.

The washing device 85, for example, as shown in Figure 4, has: a table 852; a table driving part 853 to rotate the table 852; and a washing head 851, which is arranged vertically above the table 852 and directed vertically downward. Spit out water. Here, the table 852 has a chuck part for adsorbing the wafer TE, and holds the wafer TE to which a plurality of wafers CP are adhered, and the annular frames RI2 and RI3 to which the wafer TE is fixed. The cleaning device 85 is rotated by the table driving part 853 as shown by the arrow AR81 in a state behind the table 852 supporting the annular frames RI2 and RI3 holding the wafer body TE to which the plurality of wafers CP are adhered. The table 852 simultaneously spits out water from the cleaning head 851 to reciprocate several wafers CP, and at the same time makes the cleaning head 815 stick to the area where the plurality of wafers CP are stuck in the body TE, as shown by the arrow AR82, along the It moves back and forth in the radial direction, whereby water cleans multiple wafers CP.

The wafer peripheral peeling device 50, for example, as shown in FIG. 5, has: a frame support part 521; a frame locking part 521a, which locks the annular frames RI2 and RI3; and a locking driving part 522, which is columnar and has a vertical axis. The upper end portion in the direction supports the frame support portion 521 and at the same time drives the frame locking portion 521a in the vertical direction. Here, the frame support part 521 is annular, and supports and fixes the annular frame RI2 on which the chip body TE to which a plurality of wafers CP are adhered is positioned so that the side of the chip body TE to which the chip CP is adhered faces vertically downward. ,RI2. In addition, the wafer peripheral peeling device 50 includes a base member 523 that simultaneously supports the frame support portion 521 and the locking driving portion 522, and a horizontal driving portion 53 that drives the base member 523 in the horizontal direction. The horizontal driving part 53 has: a track 532 extending in the horizontal direction; a slider 531 supporting the base member 523 and sliding along the track 532; a track 534 extending in a direction perpendicular to the track 532 in the horizontal direction; Block 533, supporting rail 532, slides along rail 534.

Furthermore, the wafer peripheral part peeling device 50 has the central parts of each of the plurality of wafers CP adhered to the wafer body TE, and makes the individual peripheral parts of the plurality of wafers CP become the wafer periphery in a state of being peeled off from the wafer body TE. Part peeling part 57. The wafer peripheral peeling part 57 has an ultraviolet irradiation part 55; a wafer pressing mechanism 56 for pressing the wafer TE; and an irradiation part pressing mechanism supporting part 514 for supporting both the ultraviolet irradiating part 55 and the wafer pressing mechanism 56. The ultraviolet light irradiation part 55 has a light source 551 that emits ultraviolet light, and a cover 552 that blocks a part of the ultraviolet light emitted from the light source 551, so that the ultraviolet light emitted from the light source 511 passes through the window 552a of the cover 552 , irradiating the portion of the sheet TE corresponding to the peripheral portion of the wafer CP, thereby causing the peripheral portion of the wafer CP to be peeled off from the sheet TE. The cover 552 is fixed to the irradiation part pressing mechanism support part 514 through the cover support part 515 in a state separated from the light source 551 . Here, the ultraviolet light irradiation part 55 irradiates ultraviolet light to a plurality of wafers CP arranged in a plurality of rows, including in a direction perpendicular to the individual row directions of the two adjacent rows of wafers CP, facing each other. The area at the end of one side is thereby irradiated with ultraviolet light at the same time to the end of each side of the two adjacent rows of wafers CP. Furthermore, the ultraviolet light irradiation part 55 may irradiate only the end part of one side of each wafer CP belonging to each row.

The wafer pressing mechanism 56 has a pressing member 561 with a tip portion that presses a portion of the wafer TE corresponding to the peripheral portion of the wafer CP; and a pressing member driving portion 562 that drives the pressing member 561 in the vertical direction and perpendicular to the vertical direction. direction. The pressing member driving part 562 moves the pressing member 561 along the vertical direction in a direction close to the wafer body TE, thereby pressing the pressing member 561 against the portion of the wafer body TE corresponding to the peripheral portion of the wafer CP. In addition, the pressing member driving unit 562 moves the pressing member 561 in a state that presses the pressing member 561 against the portion of the sheet TE corresponding to the peripheral portion of the wafer CP, and moves the pressing member 561 in a direction perpendicular to the pressing direction of the pressing member 561. direction, that is, in the direction perpendicular to the vertical direction, whereby the pressing member 561 rubs the plate body TE. In this way, the pressing member 561 is used to rub the sheet body TE, thereby causing the end of the wafer CP to move locally and relatively to the sheet body TE in the connecting portion between the wafer CP and the sheet body TE. direction, the end of the wafer CP slides relative to the body TE. Furthermore, the peripheral portion of the wafer CP is in a state of being peeled off from the body TE.

In addition, the wafer peripheral peeling device 50 also has a particle suction part 54. The particle suction part 54 suctions particles generated individually by a plurality of wafers CP from vertically below the wafer body TE. The particle suction part 54 has a suction nozzle 54a, and a wafer peripheral peeling part 57 is used to suck the wafer CP with the suction nozzle 54a when the peripheral part of the wafer CP is in a state in which it is easier to peel off from the chip body TE than the central part. Particles produced by wafer CP.

Returning to FIG. 1 , the wafer supply device 10 extracts one wafer CP from a plurality of wafers CP adhered and fixed to the wafer body TE of the annular frames RI2 and RI3, and supplies the extracted wafer CP to the wiring device 30 . The wafer supply device 10 has a wafer supply part 11 as shown in FIG. 6 . The wafer supply part 11 has a frame support part 119, a pickup mechanism 111 for picking up one wafer CP from among the plurality of wafers CP, and a cover 114. Here, the frame support portion 119 supports and fixes the ring of the chip body TE to which the plurality of wafers CP are adhered, with the surface of the chip body TE on which the plurality of wafers CP are adhered, in an attitude of the vertically upward (+Z direction) side. Shape frames RI2, RI3. Furthermore, the frame support portion 119 may support only the annular frame RI2 or only the annular frame RI3. In addition, the wafer supply part 11 has a frame lifting driving part 120 that lifts the frame supporting part 119 in the vertical direction; and a frame horizontal driving part 113 that drives the frame supporting part 119 and the frame lifting driving part 120 together in the XY direction or The direction of rotation around the Z axis.

The pick-up mechanism 111 adsorbs and holds one of the plurality of wafers CP from the side of the plurality of wafers CP in the wafer body TE, and moves it in a direction away from the wafer body TE, thereby making one wafer CP It becomes a state of being detached from the body TE. That is, the pick-up mechanism 111 moves the piece TE to the other side while holding any one of the plurality of wafers CP from one side of the piece TE to which the plurality of wafers CP are adhered. In a state where the sheet body TE is bent and the peripheral portion of the wafer CP is peeled off from the sheet body TE, the wafer CP is cut out from the sheet body TE. The pick-up mechanism 111 has: a collet 115, which adsorbs and holds the joint surface CPf side of the wafer CP; a collet lifting and lowering driving part 1161, as shown by arrow AR45, driving the collet 115 in the vertical direction; and a collet horizontal driving part 1162, as shown by arrow AR45. As shown by arrow AR46, the collet 115 and the collet lifting and lowering driving part 1161 are driven in the horizontal direction at the same time. Furthermore, the pickup mechanism 111 further has a collet washing part 117 for washing the collet 115 . The cover 114 is disposed to cover the vertical upper portions of the plurality of wafers CP, and is provided with a hole 114 a in a portion facing the pickup mechanism 111 . The pickup mechanism 111 moves the collet 115 close to the wafer CP from vertically above (+Z direction) in the wafer body TE to adsorb and hold the wafer CP. Lift the wafer CP vertically upward (+Z direction) to supply the wafer CP. Then, the wafers CP adsorbed and held by the collet 115 are conveyed above the cover 114 one by one through the hole 114 a of the cover 114 , and are transferred to the wafer transfer device 39 . The frame horizontal driving part 113 drives the annular frames RI2 and RI3 in the XY direction or the direction of rotation around the Z axis, thereby changing the position of the wafer CP located vertically below the collet 115. In addition, the pickup mechanism 111 uses the collet cleaning part 117 to clean the collet part 115a before adsorbing and holding the wafer CP by the collet part 115a. Here, the pickup mechanism 111 may be configured to clean the collet 115 each time it picks up one wafer CP, or it may be configured to clean the collet 115 each time it picks up the wafer CP only a preset number of times. Net collet 115.

The wafer transport device (also called a turret) 39 transports the wafer CP supplied from the wafer supply unit 11 until the wafer CP is delivered to the delivery position Pos1 of the head 33H of the wire bonding unit 33 of the wire bonding device 30 . As shown in FIG. 1 , the wafer transfer device 39 has two longer plates 391 , an arm 394 , a wafer holding part 393 provided at the tip of the arm 394 , and the two plates 391 The plate driving part 392 is rotated and driven together. The two plates 391 are in the shape of a rectangular box with a longer length, and one end is rotated with the other end located between the wafer supply part 11 and the head 33H as a base point. The two plates 391 are configured such that their length directions have an included angle of 90 degrees with each other. Moreover, the number of plates 391 is not limited to two, and can also be three or more.

The wafer holding part 393, as shown in FIG. 7A, is provided at the tip of the arm 394, and has two legs 393a for holding the wafer CP. The plate body 391, as shown in FIG. 7B, can accommodate the longer arm body 394 on the inside. Furthermore, an arm driving part 395 for driving the arm 394 along the length direction of the plate 391 is provided inside the plate 391 . Thereby, the wafer transfer device 39 can use the arm driving part 395 to cause the tip of the arm 394 to protrude to the outside of the plate 391, or to make the tip of the arm 394 sink into the wafer transfer device 39. The state of the inside of plate body 391. Furthermore, when the wafer transfer device 39 rotates the plate body 391, as shown by the arrow AR55 in FIG. 7B, the wafer transfer device 39 sinks into the arm body 394 into the plate body 391 to accommodate the wafer holding part 393 inside the plate body 391. Thereby, the adhesion of particles to the wafer CP during transportation is suppressed. Moreover, the two leg pieces 393a may also be provided with adsorption grooves (not shown). In this case, the wafer CP is adsorbed and held by the leg piece 392a, so the wafer CP can be transported without positional deviation. In addition, in order to prevent the wafer CP from flying out due to the centrifugal force generated when the plate body 391 rotates, a protrusion (not shown) may be provided at the tip of the leg piece 393a.

Here, as shown in FIG. 1 , the head 33H is arranged in a position in the Z-axis direction that overlaps with the trajectory OB1 drawn by the tip portion of the arm 394 after the plate 391 is rotated. When the wafer transport device 39 receives the wafer CP from the pickup mechanism 111, as shown by the arrow AR1 in Figure 1, it rotates the plate 391 around the axis AX, thereby transporting the wafer CP to the intersection with the head 33H. until exiting position Pos1.

The wire bonding device 30 is a wafer bonding device having a table unit 31, a wire bonding part 33 having a head 33H, and a head driving part 36 that drives the head 33H. The head 33H, for example, as shown in FIG. 8A , has a wafer tool 411, a head body part 413, a wafer support part 432a, and a support part driving part 432b. The wafer tool 411 is formed of silicon (Si), for example. The head body part 413 has: a holding mechanism 440 with a chuck part for adsorbing and holding the wafer CP to the wafer tool 411; and a chuck part (not shown) for fixing the wafer tool 411 to the head body by vacuum suction. Department 413. Furthermore, a ceramic heater, a coil heater, etc. are built-in in the head body part 413. The wafer tool 411 has a through hole 411a formed at a position corresponding to the holding mechanism 440 of the head body part 413, and a through hole 411b into which the wafer support part 432a is inserted.

The wafer support portion 432a is, for example, a cylindrical adsorption column. It is a component support portion provided at the tip portion of the head 33H and capable of moving in the vertical direction. The wafer support portion 432a supports the central portion serving as the first portion on the side opposite to the bonding surface CPf side of the wafer CP. For example, as shown in FIG. 8B , one wafer support portion 432 a is provided in the center.

The support driving part 432b drives the wafer supporting part 432a in the vertical direction, and at the same time, with the wafer CP placed on the tip of the wafer supporting part 432a, it depressurizes the inside of the wafer supporting part 432a to attract the wafer CP to the wafer. The tip portion of the support portion 432a. The support part driving part 432b is located at the delivery position toward the head 33H (refer to Pos1 in FIG. 1 ) after the wafer CP is held by the wafer holding part 393 of the wafer transport device 39 , and is driven by the tip of the wafer support part 432 a With the center portion of the wafer CP supported, the wafer support portion 432 a is moved vertically above the wafer holding portion 393 . Thereby, the wafer CP is transferred from the wafer holding part 393 of the wafer transfer device 39 to the head 33H.

The head driving part 36 moves the head 33H holding the transferred wafer CP vertically upward (+Z direction) in the delivery position Pos1, thereby moving the head 33H close to the table 315 to mount the wafer CP to A relative position changing portion of the mounting surface WTf of the substrate WT. More specifically, the head driving part 36 moves the head 33H holding the wafer CP vertically upward (+Z direction), thereby bringing the head 33H close to the table 315 to make surface contact with the flat joint surface CPf of the wafer CP. The flat mounting surface WTf of the substrate WT, whereby the chip CP is surface bonded to the substrate WT. Here, "flat mounting surface WTf" and "flat bonding surface CPf" mean a surface with approximately no unevenness, and RA is a surface of 1 μm or less. For example, if there is an unevenness of approximately 1 μm on the bonding surface CPf of the wafer CP or the mounting surface WTf of the substrate WT, there is a risk that voids may be generated around the unevenness. Therefore, the RA of the bonding surface CPf of the wafer CP or the mounting surface WTf of the substrate WT is preferably 1 μm or less. Here, the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP bonded to the substrate WT are activated by the activation processing device 60 . In addition, the mounting surface WTf of the substrate WT is washed with water by the cleaning device 85 after being subjected to the activation treatment. Therefore, by bringing the bonding surface CPf of the wafer CP into contact with the mounting surface WTf of the substrate WT, the wafer CP is bonded to the substrate WT in a so-called hydrophilic manner through hydroxyl groups (OH groups).

The table unit 31 includes a table 315 that holds the substrate WT with the mounting surface WTf of the substrate WT mounted on the chip CP facing vertically downward (-Z direction); and a table driving unit 320 that drives the table Taiwan 315. The table 315 is a substrate holding part movable in the X direction, Y direction and rotation direction. Thereby, the relative positional relationship between the wiring portion 33 and the table 315 can be changed, and the mounting position of each chip CP on the substrate WT can be adjusted.

Returning to FIG. 1 , the control unit 90 is, for example, a programmable controller and has a CPU (Central Processing Unit) unit and an input/output control unit. The control unit 90 is connected to the wafer supply device 10 , the wafer transfer device 39 , the wire bonding device 30 , the cleaning device 85 , the activation processing device 60 , the wafer peripheral peeling device 50 , and the transfer robot 71 . Furthermore, the control unit 90 outputs control signals to the wafer supply device 10 , the wafer transfer device 39 , the wire bonding device 30 , the cleaning device 85 , the activation treatment device 60 , the wafer peripheral peeling device 50 and the transfer robot 71 , respectively. , control these actions.

Next, a wafer bonding method using the wafer bonding system 1 of this embodiment will be described with reference to FIGS. 9 to 14 . First, as shown in FIG. 9 , the wafer bonding system 1 loads the substrate WT loaded from the loading/unloading unit 80 into the activation processing device 60 , thereby performing activation processing on the mounting surface WTf of the substrate WT. Activation process (process S11). Here, the activation processing device 60 performs the activation processing in a state supported by the sheet support portion 612 with the mounting surface WTf of the substrate WT facing vertically upward, for example.

Next, the wafer bonding system 1 puts the substrate WT that has been activated by the activation processing device 60 into the cleaning device 85 and performs a water cleaning process of cleaning the mounting surface WTf of the substrate WT (step S12). Here, the cleaning device 85 uses the table drive unit 853 to continuously rotate the table 852 while the substrate WT is supported by the table 852, and spits water from the cleaning head 851 to the substrate WT, whereby the water Wash the substrate WT. Thereby, a large number of hydroxyl groups (OH groups) or water molecules are attached to the mounting surface WTf of the substrate WT. Next, the wafer bonding system 1 transports the cleaned substrate WT to the wire bonding device 30 (step S13). At this time, in the wiring device 30, the table 315 holds the received substrate WT. Specifically, the self-cleaning device 85 of the transport robot 71 receives the substrate WT with the mounting surface WTf facing vertically upward. Thereafter, the transport robot 71 reverses the received substrate WT and maintains the substrate WT with the mounting surface WTf facing vertically downward. Then, the transfer robot 71 transports the substrate WT to the table 315 of the wire bonding device 30 with the mounting surface WTf facing vertically downward.

In addition, in parallel with the series of steps S11 to S13 described above, a portion between the plurality of wafer formation areas of the substrate provided with the plurality of wafer formation areas that are adhered to the sheet body TE and serve as the basis of the wafer CP is produced by dicing. The dicing process of dicing the substrate WD (process S21). After the dicing process, the annular frame RI1 in which the sheet TE to which the dicing substrate WD is adhered is fixed, and is loaded into the unloading and unloading unit 80 . Furthermore, in the wafer bonding system 1 , the ring-shaped frame RI1 loaded from the loading/unloading unit 80 is loaded into the activation processing device 60 . Thereafter, the activation processing device 60 performs a wafer bonding surface activation process of activating the bonding surface CPf side of the wafer CP in the dicing substrate WD adhered to the chip body TE (step S22 ). In this wafer joint surface activation process, when there is a gap between the wafers CP, the part of the gap exposed to the wafer body TE is etched, and the plastic originating from the wafer body TE has a joint surface attached to the wafer CP. The dangers of CPf. Therefore, in the wafer bonding surface activation process, it is preferable to perform the wafer bonding surface activation treatment process in a state where the wafers CP are in contact with each other or in a state where the wafers CP are connected to each other so that a part of the wafer body TE is not exposed from the gap between the wafers CP. After the wafer bonding surface activation process, the transfer robot 71 takes out the annular frame RI1 in which the wafer TE adhered to the dicing substrate WD is fixed from the activation processing device 60 and returns to the unloading and unloading unit 80 again.

Next, with respect to the annular frame RI1 in which the sheet TE adhered to the dicing substrate WD is fixed after the wafer bonding surface activation process taken out from the loading/unloading unit 80, the sheet TE is stretched so that a plurality of wafers CP are separated from each other. The stretching process of the gap state (process S23). In this stretching process, the annular frame RI2 arranged inside the annular frame RI1 is pressed against the sheet body TE and then pressed, thereby causing the sheet body TE to radially expand from the center of the annular frame RI. Stretch, and become a state in which a plurality of chips CP are spaced apart from each other. And, while this state is maintained, the annular frame RI3 is inserted to the outside of the annular frame RI2. Thereby, in a state where the plurality of wafers CP are spaced apart from each other, the adhered wafer body TE is fixed to the annular frames RI2 and RI3. Moreover, after performing the stretching process, the sheet body TE is cut from the annular frame RI1. Then, the annular frames RI2 and RI3 to which the sheet TE is fixed are put into the unloading and unloading unit 80 again.

Next, the wafer bonding system 1 puts the annular frames RI2 and RI3 in which the wafer TE is fixed after being put into the unloading and unloading unit 80 into the cleaning device 85, and performs water cleaning of the individual bonding surfaces of the plurality of wafers CP. CPf water washing process (process S24). By the way, in the stretching process, when the sheet body TE is stretched so that the dicing substrate WD is in a state where the plurality of wafers CP are spaced apart from each other, particles are generated from the wafer CP and adhere to the joint surface of the wafer CP. The dangers of CPf. On the other hand, in this embodiment, the water cleaning process is performed after the stretching process. Therefore, in the stretching process, particles adhering to the bonding surface CPf of the wafer CP can be removed by washing with water. Furthermore, the self-cleaning device 85 of the wafer bonding system 1 transports the annular frames RI2 and RI3 to which the wafer TE adhered with a plurality of wafers CP is fixed after the water cleaning process, to the wafer peripheral peeling device 50 .

After that, the wafer peripheral part peeling device 50 adheres the central parts of each of the plurality of wafers CP to the chip body TE, and the peripheral parts of each of the plurality of wafers CP become easier to peel off compared with the central part. The peripheral peeling process of the sheet TE peeling off (process S25). Here, as shown in FIG. 10A , first, the horizontal driving part 53 moves the frame support part 521 in the horizontal direction, so that the sheet TE is disposed vertically below the ultraviolet light irradiation part 55 of the wafer peripheral peeling device 50 The state of the portion corresponding to the peripheral portion of the wafer CP. Next, the ultraviolet light irradiation part 55 irradiates ultraviolet light UVL to the part of the body TE corresponding to the peripheral part of the wafer CP. Here, as shown in FIG. 10B , the ultraviolet light irradiation part 55 irradiates ultraviolet light to a plurality of wafers CP arranged in a plurality of rows (six rows in FIG. 10B ), including two adjacent ones. In the direction perpendicular to the row direction of each row of wafers CP, the area A1 of the end of the opposite side is simultaneously irradiated with ultraviolet light to the end of one of the two adjacent rows of wafers CP.

Next, the horizontal driving part 53 moves the frame support part 521 in the horizontal direction, as shown in FIG. 11A , and becomes a corresponding position in the wafer TE arranged vertically below the wafer pressing mechanism 56 of the wafer peripheral peeling device 50 The state of the peripheral portion of the wafer CP. Thereafter, the sheet pressing mechanism 56 of the wafer peripheral part peeling device 50, as shown by arrow AR52, moves and presses the pressing member 561 to the part of the sheet TE corresponding to the peripheral part of the wafer CP. The member 561 moves in a direction perpendicular to the vertical direction, thereby pressing the member 561 to rub the plate body TE. Specifically, as shown in FIG. 11B , the sheet pressing mechanism 56 makes the tip of the pressing member 561 abut against the sheet TE, and then presses the pressing member 561 into the sheet TE as shown by arrow AR52 . In the portion corresponding to the peripheral portion of the wafer CP, as shown by the arrow AR102 in FIG. 11C , in the connecting portion between the wafer CP and the sheet TE, the sheet TE is pulled closer to the wafer CP. The direction of the tip of member 561. Accompanying this, the end portion of the wafer CP is deformed, and a force as shown by arrow AR103 acts on the end portion of the wafer CP in a direction that moves locally and relatively relative to the piece TE. Furthermore, the end portion of the wafer CP slides relative to the body TE, and a portion CPs peeled off from the body TE is generated at the end portion of the wafer CP.

In this peripheral peeling process, first, the end portion of the wafer CP is irradiated with ultraviolet light for all the plurality of rows, and then the end portion of the wafer CP is rubbed by the pressing member 561 . Furthermore, in the peripheral peeling process, each time ultraviolet light is irradiated to the area A1 including one of the ends of one side of the wafers CP in the two adjacent rows, the pressing member 561 may be used to press the wafer body included in the wafer body. The end of the wafer CP in the area A1 irradiated with ultraviolet light in TE is subjected to rubbing treatment.

Returning to FIG. 9 , next, the wafer bonding system 1 fixes the adhered chip in a state where individual peripheral portions of the plurality of wafers CP are more easily peeled off from the chip body TE than the central portion. The annular frames RI2 and RI3 of the body TE are transported to the wafer supply device 10 (step S26). At this time, the transfer robot 71 receives the annular frames RI2 and RI3 that hold the wafer body TE from the cleaning device 85 in an attitude such that the joint surface CPf of the wafer CP faces vertically upward. Thereafter, the transport robot 71 transports the received ring frames RI2 and RI3 to the wafer supply unit 11 of the wafer supply device 10 as they are. Furthermore, in the wafer supply part 11, the conveyed annular frames RI2 and RI3 are supported by the frame support part 119.

Next, the wafer bonding system 1 performs a wafer bonding process of bonding the wafer CP to the substrate WT by bringing the wafer CP into contact with the mounting surface WTf of the substrate WT (process S31). Here, the wafer bonding system 1 first performs a picking-up process of picking up one of the plurality of wafers CP adhered to the wafer body TE. In this picking-up process, as shown in FIG. 12A , the wafer transport device 39 has two plates 391 arranged in a position not overlapping the wafer supply device 10 . Furthermore, as shown by the arrow AR11 in FIG. 12B , the collet 115 of the pickup mechanism 111 moves vertically downward and comes into contact with the wafer CP to attract and hold the wafer CP. Next, as shown by arrow AR12 in FIG. 13A , the frame horizontal driving part 113 moves the frame support part 119 vertically downward and moves the annular frames RI2 and RI3 vertically downward. Thereby, portions CPs separated from the body TE are generated in the peripheral portion of the wafer CP. At this time, the peripheral portion of the wafer CP has been peeled off in the wafer peripheral portion peeling device 50. Therefore, when the annular frames RI2 and RI3 are moved vertically downward, almost no stress is applied to the peripheral portion of the wafer CP. . Here, as shown in FIG. 13B , when the annular frames RI2 and RI3 move further vertically downward, the area of the portion CPs separated from the body TE in the peripheral portion of the wafer CP increases accordingly. Furthermore, as shown in FIG. 13C , the wafer CP is in a state separated from the body TE. Furthermore, the pickup mechanism 111 lifts the collet 115 to a position higher than the height of the plate 391 of the wafer transport device 39 .

Next, in the wafer bonding system 1, as shown in FIG. 14A, one plate 391 of the wafer transport device 39 is directed toward the wafer supply part 11. Afterwards, the pickup mechanism 111, as shown by the arrow AR14 in FIG. 14B, moves the collet 115 vertically downward to transport the wafer CP to the wafer holding part 393.

Next, the wafer bonding system 1 rotates the plate body 391 in the direction of arrow AR13 in FIG. 15A. At this time, the wafer holding portion 393 at the tip of the arm 394 of the wafer transfer device 39 is disposed at the transfer position Pos1 vertically above the head 33H of the wire bonding portion 33 . That is, the wafer transport device 39 transports the wafer CP received from the wafer supply unit 11 until the wafer CP is transferred to the transfer position Pos1 of the head 33H. Furthermore, the head driving part 36 moves the wiring part 33 vertically upward so that the head 33H approaches the wafer holding part 393 of the wafer transport device 39 . Next, the support portion driving portion 432b moves the wafer support portion 432a vertically upward. Thereby, the wafer CP held by the wafer holding part 393 is arranged vertically above the wafer holding part 393 in a state of being supported by the upper end part of the wafer supporting part 432a as shown in FIG. 15B side. Next, the wafer transfer device 39 causes the arm 394 to sink into the plate body 391 . Then, the support portion driving portion 432b moves the wafer support portion 432a vertically downward. Thereby, the wafer CP is held by the tip portion of the head 33H. At this time, the pickup mechanism 111 moves the collet 115 vertically upward as indicated by the arrow AR15 before adsorbing and holding the wafer CP bonded to the substrate WT next time, and then transports the collet 115 to the collet cleaning section as indicated by the arrow AR16 116. Furthermore, the collet washing part 116 performs a collet washing process of washing the collet 115 . That is, the pickup mechanism 111 uses the collet cleaning part 116 to clean the collet 115 before adsorbing and holding the wafer CP by the collet 115 .

Thereafter, the wafer bonding system 1 drives the table 315 and simultaneously rotates the wire bonding part 33, thereby performing alignment to correct the relative positional deviation between the wafer CP and the substrate WT. Furthermore, the wafer bonding system 1 bonds the wafer CP to the substrate WT by means of the lifting head 33H. Here, the mounting surface WTf of the substrate WT and the bonding surface CPf of the wafer CP are in a hydrophilic bonded state through hydroxyl groups (OH groups).

Moreover, after the above-mentioned series of processes are completed, the substrate WT in which the wafer CP is mounted is taken out from the wafer bonding system 1, and then put into a heat treatment device (not shown) for heat treatment. A heat treatment device that performs heat treatment on the substrate WT under conditions such as a temperature of 350° C. and one hour.

As described above, according to the wafer bonding system of this embodiment, the central portions of each of the plurality of wafers CP are adhered to the chip body TE, and the peripheral portions of each of the plurality of wafers CP are, compared with the central portion, It becomes a state in which it is easier to peel off from the sheet TE. With this, the end portions of each of the plurality of wafers CP have already been peeled off when picking up the wafer CP. Therefore, even if the wafer is thin, the end portion of the wafer can be suppressed from rebounding when peeled off from the wafer body. The particles attached to the end surface of the wafer are scattered to the surrounding wafer CP. Therefore, poor bonding of the wafer CP to the substrate WT caused by particles adhering to the bonding surface of the wafer CP can be suppressed.

In particular, when the thickness of the wafer CP is thin, the wafer CP is easily damaged when it is detached from the wafer body TE, and it is difficult to detach the wafer CP from the wafer body TE. On the other hand, according to the wafer bonding system 1 of this embodiment, when the wafer CP is peeled off from the wafer body TE, the end portion of the wafer CP can be in a state of being peeled off in advance. When the body is separated from each of the plurality of wafers CP, the stress applied to each of the plurality of wafers CP can be reduced. Therefore, when each of the plurality of wafers CP is detached from the wafer body TE, it is possible to suppress excessive stress from being applied to the wafer CP, and it is possible to suppress damage to the wafer CP caused by excessive stress.

By the way, after the wafer peripheral part peeling process of peeling off the end of the wafer CP from the wafer body TE, when the water cleaning process of washing with water is carried out by the cleaning device 85, the wafer body TE only adheres to the wafer Therefore, due to the power of the water ejected from the cleaning head 615 and the centrifugal force acting on the wafer CP due to the rotation of the table 852, the wafer CP may be detached from the chip body TE. On the other hand, in the wafer bonding system 1 of this embodiment, the wafer peripheral portion peeling process is performed after the water cleaning process. Therefore, it is possible to suppress the separation of the wafer CP from the body TE during the water cleaning process. Love affair.

(Embodiment 2) In the wafer bonding system of this embodiment, the wafer supply device is adhered to the wafer body at a central portion including a plurality of individual wafers, and the peripheral portions of the plurality of individual wafers are easier to automate than the central portion. The state of peeling off the wafer body is different from that in Embodiment 1 in terms of the peeled-off portion around the wafer. That is, in the wafer bonding system of this embodiment, the wafer supply device is different from the first embodiment in that it includes the functions of the wafer peripheral peeling device described in the first embodiment.

The wafer bonding system of this embodiment is a wafer bonding system 1 of Embodiment 1 shown in FIG. 1 , in which the wafer peripheral peeling device 50 is omitted and a wafer supply device 2010 is included in place of the wafer supply device 10 . The wafer supply device 2010 has a wafer supply part 2011 shown in FIG. 16 . In addition, in FIG. 16 , the same structures as those in Embodiment 1 are assigned the same symbols as in FIG. 6 . The wafer supply part 2011 has: a frame support part 119; a frame lift driving part 2120 to raise and lower the frame support part 119 in the vertical direction; a pickup mechanism 2111 to pick up one wafer CP from a plurality of wafers CP; the frame is driven horizontally part 2113; and the wafer peripheral peeling part 57. The frame horizontal driving part 2113 moves the frame supporting part 119 and the frame lifting driving part 2120 together to the XY direction or the direction of rotation around the Z axis, thereby changing the vertical position of the peeling part 57 or the pickup mechanism 2111 located at the wafer periphery. The position of the chip CP in the upper position.

The wafer peripheral peeling part 57 is arranged vertically below the annular frames RI2 and RI3 to which the wafer body TE supported by the frame support part 119 is fixed. The wafer peripheral peeling part 57 has an ultraviolet irradiation part 55, a wafer pressing mechanism 56, and a supporting part 2514 that supports the ultraviolet irradiating part 55 and the wafer pressing mechanism 56 together. The ultraviolet light irradiation part 55 irradiates ultraviolet light to a part corresponding to the peripheral part of the wafer CP in the sheet body TE fixed to the annular frames RI2 and RI3 supported by the frame support part 119. The wafer pressing mechanism 56 presses the tip portion of the pressing member 561 to the portion corresponding to the peripheral portion of the wafer CP in the wafer TE fixed to the annular frames RI2 and RI3 supported by the frame support portion 119 In the latter state, the disc body TE is rubbed by the pressing member 561 by moving in a direction perpendicular to the pressing direction of the pressing member 561 .

The pickup mechanism 2111 causes one of the plurality of wafers CP to protrude from the opposite side of the plurality of wafers CP in the body TE, thereby causing one wafer CP to be separated from the body TE. Here, the pickup mechanism 2111 holds the side opposite to the bonding surface CPf side of the wafer CP to cut out the wafer CP. The pickup mechanism 2111 has a needle 2111a and a needle driving part 2111c that moves the needle 2111a in the vertical direction as shown by arrow AR245 in FIG. 16 . The cover 114 is disposed to cover the vertical upper portions of the plurality of wafers CP, and is provided with a hole 114 a in a portion facing the pickup mechanism 2111 . For example, there are four needle bodies 2111a. However, the number of needles 111a may be three, or may be five or more. The pick-up mechanism 2111 pierces the needle body 2111a from the vertical lower part (-Z direction) of the wafer body TE to the wafer body TE to lift the wafer CP vertically upward (+Z direction), thereby supplying the wafer CP. Furthermore, each of the wafers CP adhered to the chip body TE passes through the hole 114a of the cover 114 through the needle 2111a, protrudes above the cover 114 one by one, and is transferred to the wafer transfer device 39.

Next, a wafer bonding method using the wafer bonding system of this embodiment will be described with reference to FIGS. 17 to 20 . In addition, in FIG. 17 , the same steps as those in Embodiment 1 are assigned the same symbols as those in FIG. 9 . As shown in FIG. 17 , after the substrate mounting surface activation process (process S11 ) and the water cleaning process (process S12 ), the substrate WT is transported to the wire bonding device 30 (process 13 ). Moreover, like Embodiment 1, in parallel with the steps S11 to S13, a dicing step (step S21), a wafer bonding surface activation step (step S22), a stretching step (step S23), and a water cleaning step (step S23) are performed. Step S24). Furthermore, the self-cleaning device 85 of the wafer bonding system transports the annular frames RI2 and RI3 in which the wafer bodies TE adhered with the plurality of wafers CP after the water cleaning process are fixed, to the wafer supply device 2010 (process S225).

Next, the wafer supply device 2010 performs a wafer peripheral portion peeling process in which the central portions of each of the plurality of wafers CP are adhered to the wafer body TE, and the peripheral portions of each of the plurality of wafers CP are peeled off from the wafer body TE. (Step S226). Here, as shown in FIG. 18A , first, the frame horizontal driving part 2113 moves the frame supporting part 119 in the horizontal direction, so that it is vertically above the ultraviolet light irradiation part 55 , and the chip TE corresponding to the wafer CP is arranged. The state of the peripheral part. Next, the ultraviolet light irradiation part 55 irradiates ultraviolet light UVL to the part of the body TE corresponding to the peripheral part of the wafer CP. Next, the frame horizontal driving part 2113 moves the frame supporting part 119 in the horizontal direction, so that the part of the wafer TE corresponding to the peripheral part of the wafer CP is arranged vertically above the wafer pressing mechanism 56 . Thereafter, as shown in FIG. 18B , the sheet pressing mechanism 56 of the wafer peripheral peeling device 50 presses the pressing member 561 to the portion of the sheet TE corresponding to the peripheral portion of the wafer CP, as shown by arrow AR211 . In this state, the pressing member 561 is moved in a direction perpendicular to the vertical direction, so that the pressing member 561 rubs the plate body TE. Thereby, the peripheral part of the wafer CP is in a state in which it is easier to peel off from the body TE than the central part. Furthermore, the frame horizontal driving part 2113, the ultraviolet light irradiation part 55 and the sheet pressing mechanism 56 repeat the above-mentioned series of actions, so that all the peripheral parts of the plurality of wafers CP adhered to the sheet TE are aligned with the central part. In comparison, it is in a state where it is easier to peel off from the sheet TE.

Returning to FIG. 16 , next, the wafer bonding system performs the wafer bonding process (process S31 ). Here, in the wafer bonding system 1, first, the frame horizontal driving part 2113 moves the frame supporting part 119 in the horizontal direction. As a result, as shown in FIG. 19A, the picked up wafer CP is arranged vertically above the picking up mechanism 2111. state. Then, as shown by arrow AR212, the frame lift driving part 2120 moves the frame support part 119 vertically upward, and at the same time, as shown by arrow AR213, the pickup mechanism 2111 moves vertically upward to contact the tip of the needle 2111a. Body TE. Next, as shown by arrow AR214 in FIG. 19B , the frame lifting and lowering driving part 2120 moves the frame support part 119 vertically downward and moves the annular frames RI2 and RI3 vertically downward. Thereby, the peripheral portion of the wafer CP is separated from the body TE. Next, as shown in FIG. 20A , the pick-up mechanism 2111 moves vertically upward, whereby the tip of the needle 2111a penetrates the wafer body TE to protrude the wafer CP vertically upward, and is separated from the wafer body TE. . Thereafter, the wafer transport device 39, with the arm body 394 recessed inside the plate body 391, faces the wafer supply device 2010 side, as shown in FIG. 20B, and protrudes the tip of the arm body 394 toward the plate body 391. Outside. At this time, the needle 2111a of the pickup mechanism 2111 is arranged between the two legs 292a (see FIG. 7A ) of the wafer holding portion 393 at the tip portion of the arm 394. Next, when the pickup mechanism 2111 moves vertically downward to the standby position, the wafer CP is transferred to the wafer holding part 393.

Thereafter, as described in Embodiment 1, the wafer bonding system transports the wafer CP received from the wafer supply unit 2011 by the wafer transport device 39 until the wafer CP is transferred to the transfer position of the head 33H, so that the tip of the head 33H The part holds the wafer CP. Next, the wafer bonding system, after performing alignment to correct the relative positional deviation of the wafer CP and the substrate WT, raises the head 33H, thereby bonding the wafer CP to the substrate WT.

Here, the characteristics of the wafer supply device 2010 of this embodiment will be described while comparing them with the wafer bonding system of the comparative example. The wafer bonding device of the comparative example, as shown in FIG. 21A, includes a pickup mechanism 9111. The pickup mechanism 9111 has a needle 2111a, a needle driving part 2111c, and a wafer body around the picked up wafer CP in the adsorption wafer body TE. Adsorption part 9111b. The pick-up mechanism 9111 of the comparative example first abuts the tip of the needle body 2111a to the sheet TE in a state where the sheet body TE is held by the sheet body adsorption part 9111b, and then pushes out the needle body 2111a vertically upward. At this time, the end of the wafer CP is deformed along the body TE, as shown by arrow AR901. At this time, a force in the direction of sliding with respect to the piece TE acts on the end portion of the wafer CP due to deformation. Moreover, when the pickup mechanism 9111 moves the needle 2111a further vertically upward, when the force acting on the end of the wafer CP exceeds the contact force between the end of the wafer CP and the body TE, as shown by the arrow in Figure 21B As shown in AR902, the end of the wafer CP is vertically upward and rebounds upward forcefully. At this time, the particles attached to the end surface of the wafer CP are scattered to the surroundings.

On the other hand, in the wafer supply device 2010 of this embodiment, the wafer CP is extruded in a state where the end portion of the wafer CP is peeled off from the body TE. Therefore, upward rebound of the end portion of the wafer CP can be suppressed.

As described above, according to the wafer bonding system of this embodiment, the wafer supply device 2010 includes the wafer peripheral peeling part 57 . This eliminates the need for a wafer peripheral portion peeling device, so that this portion can be used to downsize the entire wafer bonding system.

(Embodiment 3) In the wafer bonding system of this embodiment, the wafer supply device is adhered to the wafer body at the central portion including a plurality of individual wafers, and the peripheral portions of the plurality of individual wafers are easier to install than the central portion. It is different from Embodiment 1 in the point of peeling off the peripheral portion of the wafer in a state of being peeled off from the chip body. That is, in the wafer bonding system of this embodiment, the wafer supply device is different from the first embodiment in that it includes the function of the wafer peripheral peeling device described in the first embodiment.

The wafer bonding system of this embodiment is a wafer bonding system 1 of Embodiment 1 shown in FIG. 1 , in which the wafer peripheral peeling device 50 is omitted and a wafer supply device 3010 is included in place of the wafer supply device 10 . The wafer supply device 3010 has a wafer supply part 3011 as shown in FIG. 22 . In addition, in FIG. 22 , the same structures as those in Embodiment 1 are assigned the same symbols as in FIG. 6 . The wafer supply part 3011 has a frame support part 119, a frame lift drive part 2120 that raises and lowers the frame support part 119 in the vertical direction, a pickup mechanism 3111 that picks up one wafer CP from among a plurality of wafers CP, and a frame horizontal drive part 3113, and the wafer peripheral peeling part 57. The frame horizontal driving part 3113 moves the frame supporting part 119 and the frame lifting driving part 2120 together to the XY direction or the direction of rotation around the Z axis, thereby changing the wafer CP located vertically below the wafer peripheral peeling part 57 location.

The wafer peripheral peeling part 57 is arranged vertically above the annular frames RI2 and RI3 to which the wafer body TE supported by the frame support part 119 is fixed. The wafer peripheral peeling part 57 has an ultraviolet irradiation part 55, a wafer pressing mechanism 56, and a supporting part 3514 that supports the ultraviolet irradiating part 55 and the wafer pressing mechanism 56 together. The ultraviolet light irradiation part 55 irradiates ultraviolet light to a part corresponding to the peripheral part of the wafer CP in the sheet body TE fixed to the annular frames RI2 and RI3 supported by the frame support part 119. The wafer pressing mechanism 56 presses the tip portion of the pressing member 561 to the portion corresponding to the peripheral portion of the wafer CP in the wafer TE fixed to the annular frames RI2 and RI3 supported by the frame support portion 119 In the latter state, the disc body TE is rubbed by the pressing member 561 by moving in a direction perpendicular to the pressing direction of the pressing member 561 . The particle suction part 54 uses the suction nozzle 54a to suck the particles generated on the wafer CP with the suction nozzle 54a when the peripheral part of the wafer CP is in a state where it is easier to peel off from the chip body TE than the central part in the wafer peripheral part peeling part 57. Particles.

The pickup mechanism 3111 has: a collet 3115, which can change the direction of the chuck head 115a that holds the wafer CP to vertical upward or vertical downward; a collet lifting and lowering driving part 1161; a collet horizontal driving part 1162; and a collet cleaning Net part 117. The pickup mechanism 3111 brings the collet 3115 close to the wafer CP from vertically downward (-Z direction) in the wafer body TE to adsorb and hold the wafer CP, and pulls the wafer CP vertically downward (-Z direction), thereby obtaining Wafer CP. Furthermore, the pickup mechanism 3111 changes the posture of the collet 3115 so that the chuck head 115 a faces vertically downward, and then brings the collet 3115 close to the wafer holding portion 393 of the wafer transport device 39 . Furthermore, the pickup mechanism 3111 releases the adsorption and holding of the wafer CP in a state in which the wafer CP is in contact with the wafer holding portion 393 , thereby delivering the wafer CP to the wafer transport device 39 . In addition, the pickup mechanism 3111 uses the collet cleaning part 117 to clean the collet part 115a before adsorbing and holding the wafer CP by the collet part 115a of the collet 3115. Here, the pickup mechanism 3111 may be one that cleans the collet 115 each time it picks up one wafer CP, or it may be one that cleans the collet 115 each time it picks up the wafer CP only a preset number of times. Collet 115.

Next, the wafer bonding method using the wafer bonding system of this embodiment is almost the same as the wafer bonding method described in Embodiment 2, so it will be described with reference to FIG. 17, FIG. 23, and FIG. 24. In the wafer peripheral peeling process (process S226) shown in FIG. 17, as shown in FIG. 23A, first, the frame horizontal driving part 3113 moves the frame supporting part 119 in the horizontal direction, thereby becoming the ultraviolet light irradiation part. Vertically above 55, a portion of the body TE corresponding to the peripheral portion of the wafer CP is disposed. Next, the ultraviolet light irradiation part 55 irradiates ultraviolet light UVL to the part of the body TE corresponding to the peripheral part of the wafer CP. Next, the frame horizontal driving part 3113 moves the frame supporting part 119 in the horizontal direction, whereby the part of the wafer TE corresponding to the peripheral part of the wafer CP is arranged vertically below the wafer pressing mechanism 56 . Thereafter, as shown in FIG. 23B , the sheet pressing mechanism 56 of the wafer peripheral peeling device 50 presses the pressing member 561 to the portion of the sheet TE corresponding to the peripheral portion of the wafer CP, as shown by arrow AR311 In the latter state, the pressing member 561 is moved in a direction perpendicular to the vertical direction, whereby the pressing member 561 rubs the plate body TE. Thereby, the peripheral part of the wafer CP is in a state where it is easier to peel off from the body TE than the central part.

Returning to FIG. 17 , next, the wafer bonding system performs the wafer bonding process (process S31 ). Here, in the wafer bonding system 1, first, the frame horizontal driving part 2113 moves the frame support part 119 in the horizontal direction, as shown by the arrow AR312 in FIG. The status of the chip CP. Next, as shown by arrow AR313, the frame lifting driving part 2120 moves the frame supporting part 119 vertically downward. Furthermore, as shown by arrow AR314, the pickup mechanism 3111 moves the collet 3115 vertically upward with the chuck head 115a facing vertically upward, and after abutting against a wafer CP, it adsorbs and holds the collet 3115. Of. Next, as shown by arrow AR315 in FIG. 24B , the frame lifting drive unit 2120 moves the frame support part 119 vertically upward, thereby moving the annular frames RI2 and RI3 vertically upward. Thereby, the chip CP is in a state of being detached from the chip body TE. Next, the pickup mechanism 3111 moves the collet 3115 vertically downward to abut the wafer holding portion 393 of the wafer transport device 39 after positioning the collet 3115 with the chuck portion 115a facing vertically downward. Thereafter, the pickup mechanism 3111 releases the suction and holding of the wafer CP by the collet 3115, thereby transporting the wafer CP to the wafer holding part 393 of the transport device 39.

Thereafter, as described in Embodiment 1, the wafer bonding system transports the wafer CP received from the wafer supply unit 3011 by the wafer transport device 39 until the wafer CP is transferred to the transfer position of the head 33H, so that the tip of the head 33H The part holds the wafer CP. Next, the wafer bonding system, after performing alignment to correct the relative positional deviation of the wafer CP and the substrate WT, raises the head 33H, thereby bonding the wafer CP to the substrate WT.

As described above, according to the wafer bonding system of this embodiment, the wafer supply device 3010 includes the wafer peripheral peeling part 57 similarly to the second embodiment. This eliminates the need for a wafer peripheral peeling device, and therefore, this part enables the entire wafer bonding system to be miniaturized.

Each embodiment of the present invention has been described above. However, the present invention is not limited to the above-described embodiment. For example, the wafer peripheral part peeling device 50 may be the central part of each of the plurality of wafer formation areas in the dicing substrate WD, which is adhered to the sheet body TE, and the peripheral part of each of the plurality of wafer formation areas may be adjacent to the central part. In comparison, it is in a state where it is easier to peel off from the sheet TE. Here, the dicing substrate WD is formed by dicing the portion between the plurality of wafer forming areas of the substrate on which the plurality of wafer areas that serve as the base of the wafer CP are formed. Furthermore, as a dicing method when forming the diced substrate WD, it is preferable to adopt the sneak dicing method. In this stealth dicing method, for example, as shown in FIG. 25A , the laser processing head 8041 radiates laser light having a wavelength that passes through the dicing substrate WD, while maintaining a distance from the dicing substrate WD so that the laser light is concentrated. The light spot moves between the plurality of wafer formation areas ACP inside the dicing substrate WD. Thereby, the modified portion PAS is formed inside the dicing substrate WD in the portion between the adjacent wafer formation areas ACP. Furthermore, the stretching process may be performed after the water cleaning process and the wafer peripheral peeling process described in Embodiment 1 and before the bonding process, whereby the dicing substrate WD can be separated into a plurality of wafers CP. Here, in the wafer peripheral peeling process, the frame supporting portion 521 of the wafer peripheral peeling device 50 only needs to support and fix the annular frames RI2 and RI3 to which the sheet TE adhered to the dicing substrate WD is fixed. Furthermore, in the stretching process, for example, as shown in FIG. 25B , the sheet TE is stretched as indicated by arrow AR81 , and the dicing substrate WD is separated into a plurality of wafers CP. In this case, in particular, the edge portion P81 on the opposite side to the TE side of the wafer CP in FIG. 25B becomes sharp and has almost no chips.

Furthermore, as a dicing method when forming the diced substrate WD, a plasma dicing method may be used. In this plasma dicing method, after a mask covering the plurality of wafer forming areas ACP covering the dicing substrate WD is formed on the dicing substrate WD, the mask side of the dicing substrate WD is exposed to the plasma for etching. Therefore, it is enough to cut the wafer to form the area between the ACP.

By the way, when the stealth dicing method is adopted, as shown in FIG. 25A , a modified portion PAS made by laser light is formed inside the portion between adjacent wafer formation areas of the dicing substrate WD. Therefore, after the dicing substrate WD is separated into a plurality of wafers CP, as shown in FIG. 25B , the modified layer PAS is exposed on the side surface of the wafer CP. Therefore, when the separation and dicing substrate WD is a plurality of wafers CP, when the end of the wafer CP rebounds upward, the modified layer PAS exposed to the side of the wafer CP may collapse to generate particles. On the other hand, according to this structure, the end portion of the wafer CP can be suppressed from rebounding upward, so that the generation of particles can be effectively suppressed by this portion.

In Embodiment 1, the wafer supply device 10 may include a wafer fixed in the sheet TE of the annular frames RI2 and RI3 in a state where the frame supporting part 119 supports the annular frames RI2 and RI3. The side opposite to the CP side irradiates ultraviolet light to all the ultraviolet light irradiation parts of the plurality of wafers CP. In this case, in the wafer peripheral part peeling device 50 , after the peripheral parts of each of the plurality of wafers CP are in a state of being peeled off from the body TE, the wafer supply device 10 irradiates ultraviolet light to all of the plurality of wafers CP. , thereby achieving a state in which all the plurality of wafers CP are placed on the sheet TE in a state where they can be easily peeled off from the sheet TE.

Furthermore, in Embodiment 2, the wafer supply device 2010 may include, in addition to the ultraviolet irradiation part 55, the frame support part 119 to support the annular frames RI2 and RI3, and be fixed to the ring. The side opposite to the wafer CP side in the body TE of the frames RI2 and RI3 irradiates ultraviolet light to all the ultraviolet light irradiation parts of the plurality of wafers CP. Alternatively, the wafer supply device 10 may be provided with a wafer peripheral peeling device having a cover that moves the cover 522 to either a position that blocks the light path of the light source 551 or a position that does not block the light path. Body movement mechanism. Furthermore, the wafer peripheral part peeling device may also use a cover moving mechanism to move the cover 522 to a position that blocks the light path of the light source 551, so that only the peripheral part of the wafer CP can be irradiated with ultraviolet light. The cover moving mechanism moves the cover 522 to a position that does not block the light path of the light source 551, whereby the ultraviolet light can be irradiated to all of the plurality of wafers CP. In this case, in the wafer supply device 2010, after the peripheral portions of each of the plurality of wafers CP are peeled off from the body TE, ultraviolet light is irradiated to the entirety of the plurality of wafers CP, thereby forming the plurality of wafers CP. The CP is placed on the sheet TE in a state where it is completely peeled off from the sheet TE.

According to this structure, the wafers CP can be supplied more smoothly in a state where all the plurality of wafers CP are peeled off from the complete wafer body TE and placed on the wafer body TE. Furthermore, the ultraviolet light irradiation part 55 may irradiate ultraviolet light only to the end of the wafer CP and then irradiate ultraviolet light to the entire surface of the wafer CP to reduce the adhesive force of the sheet TE corresponding to the entire wafer CP.

The wafer bonding system 1 described in Embodiment 1 may have a structure that does not include the wafer peripheral portion peeling device 50 . Furthermore, the wafer supply device has a pickup mechanism 6111 shown in FIG. 26A. This pickup mechanism 6111 has a collet 115, a collet lifting and lowering driving part 1161, a collet horizontal driving part 1162, a collet cleaning part 117, a needle 2111a, and a needle driving part 2111c. In addition, in FIG. 26A , the same structures as those in Embodiments 1 and 2 are assigned the same symbols as in FIGS. 6 and 16 . Furthermore, the pickup mechanism 6111 has a chip suction portion 6111b that sucks the periphery of the wafer CP extruded by the needle 2111a in the chip TE. The pickup mechanism 6111, as shown in FIG. 26B, supplies the wafer CP by extruding it with the needle 2111a in a state where the wafer CP is sucked and held by the collet 115. Incidentally, in this modification, the bonding surface CPf of the wafer CP is in contact with the collet 115. Therefore, when the wafer CP is picked up a plurality of times, particles may adhere to the bonding surface CPf. On the other hand, in this modification, by cleaning the contact surface of the collet 115 with the wafer CP, measures against particles adhering to the bonding surface CPf can be implemented.

In addition, in the modified example shown in FIG. 26A and FIG. 26B , the structure of the pickup mechanism may also include a needle 2111a, a needle driving part 2111c, and a sheet adsorption part 6111b. The wafer CP is extruded by the needle 211a in the state surrounding the wafer CP extruded by the needle 2111a in the wafer body TE, and the wafer transport device 39 directly receives the extruded wafer CP for transport.

In Embodiments 1 and 2, the wafer supply device 10, 2010 may have a structure that does not include the cover 114.

In each embodiment, the example in which the wafer peripheral peeling part 57 has the ultraviolet light irradiation part 55 and the sheet pressing mechanism 56 has been described. However, in addition, it may also have a heating part that heats the sheet TE. .

In each embodiment, the example in which the wafer peripheral peeling portion 57 sequentially presses one side of both ends of the wafer CP has been described. However, the invention is not limited to this. For example, the wafer peripheral peeling portion may also be used. At least one pressing member simultaneously presses both ends of the wafer CP. For example, as shown in FIGS. 27A and 27B , the wafer peripheral peeling part 4057 of this modification has an ultraviolet light irradiation part 4055 that simultaneously irradiates ultraviolet light to both ends of the chip body TE corresponding to one wafer CP. part; the chip pressing mechanism 4056, which simultaneously presses the parts of the chip TE corresponding to both ends of one wafer CP; and the irradiation part pressing mechanism support part 4514, which jointly supports the ultraviolet irradiation part 4055 and the chip pressing mechanism 4056. The ultraviolet light irradiation part 4055 has: a light source 4551 that emits ultraviolet light; and a cover 4552 that blocks part of the ultraviolet light emitted from the light source 4551; and a plurality of windows 4552a that are emitted from the light source 4511 and pass through the cover 4552. The ultraviolet light irradiates the portion of the body TE corresponding to the peripheral portion of the wafer CP. The cover 4552 is fixed to the irradiation part pressing mechanism support part 4514 through the cover support part 4515 in a state separated from the light source 4551.

The wafer pressing mechanism 4056 has: a plurality of pressing members 4561, the tip portion of which presses the portion of the wafer TE corresponding to the peripheral portion of the wafer CP; and a pressing member driving part 4562, which synchronously drives the plurality of pressing members 4561 in the vertical direction. and the direction perpendicular to the vertical direction. The pressing member driving part 4562 moves the plurality of pressing members 4561 along the vertical direction in a direction close to the wafer body TE, thereby simultaneously pressing the plurality of pressing members 4561 to the periphery of the wafer body TE corresponding to the wafer CP. part of the ministry. In addition, the pressing member driving unit 4562 moves the plurality of pressing members 4561 in the vertical direction after pressing the plurality of pressing members 4561 to the portion of the sheet TE corresponding to the peripheral portion of the wafer CP. In the orthogonal direction, the plate body TE is rubbed by a plurality of pressing members 4561.

In this wafer peripheral peeling part 4057, first, as shown in FIG. 27A, an ultraviolet light irradiation part 4055 simultaneously irradiates ultraviolet light UVL to each part of the body TE corresponding to both ends of the wafer CP. Next, as shown in FIG. 27B , the wafer pressing mechanism 4056, as indicated by the arrow AR452, simultaneously presses a plurality of pressing members 4561 to the state after reaching the portions of the wafer TE corresponding to both ends of the wafer CP. Next, move the plurality of pressing members 4561 in a direction perpendicular to the vertical direction, thereby rubbing the plate body TE with the plurality of pressing members 4561.

When this structure is adopted, the processing capability in the wafer peripheral peeling process can be improved.

In Embodiment 2, the example in which the pick-up mechanism 2111 uses the needle 2111a to protrude the wafer CP vertically upward has been described. However, the present invention is not limited to this. For example, the pick-up mechanism 2111 may be replaced by a method such as in Embodiment 3. The pickup mechanism 3111 described above is a pickup mechanism that adsorbs and holds the wafer CP from vertically above. Furthermore, in this case, the pickup mechanism may be one that adsorbs and holds only the peripheral portion of the bonding surface side of the wafer CP.

In Embodiment 3, the pick-up mechanism 3111 may also press the central part of the wafer CP toward one side from the other side of the piece TE opposite to the side on which the chip CP is adhered, thereby deflecting the chip. In the curved sheet body TE, in a state where the peripheral portion of the wafer CP is peeled off from the sheet body, only the peripheral portion on the bonding surface side of the wafer CP is adsorbed and held. Furthermore, the pickup mechanism 3111 may be one that adsorbs and holds the peripheral portion of the wafer CP on the side opposite to the bonding surface side.

In Embodiment 2, for example, as shown in FIG. 28 , the pickup mechanism 7111 may also have, in addition to the needle body 2111 a and the needle body driving part 2111 b, a wafer extruded by the needle body 2111 a in the adsorption piece TE. The sheet adsorption part 6111b around the CP.

In each embodiment, in the wafer supply device 10 that supplies the wafer CP, when the collet 115 of the wafer CP is bonded to the bonding surface WTf of the substrate WT is sucked and held, the collet 115 is used to hold the wafer CP. An example of the clamp cleaning unit 117 cleaning the collet 115 . However, it is not limited to this, and the wafer supply device may also include a pickup mechanism 5111 having a collet 5115 provided with a Bernoulli chuck 5115a as shown in FIG. 29A . In addition, in FIG. 29A , the same structures as those in Embodiment 1 are assigned the same symbols as in FIG. 5 . In this case, the pickup mechanism 5111 holds the bonding surface CPf side of the wafer CP bonded to the substrate WT in a non-contact manner.

In the pick-up mechanism 111 of Embodiment 1, as shown in FIG. 29B, the chuck portion 115a of the collet 115 having the adsorption hole 115b holds the wafer CP in a state in which it is in contact with the bonding surface CPf side of the wafer CP. Therefore, it is necessary to clean the chuck portion 115a. On the other hand, according to this structure, the pickup mechanism 5111 holds the bonding surface CPf side of the wafer CP bonded to the substrate WT in a non-contact manner. Therefore, it is possible to suppress The particles adhere to the joint surface CPf.

In Embodiment 1, for example, as shown in FIG. 30 , the wafer bonding system 9 may also include: a wafer peripheral peeling device 50 for fixing a ring-shaped frame (hereinafter referred to as the wafer TE) to which a plurality of wafers CP are adhered. It is called a "wafer fixing frame".) RI2 and RI3 become the central part of each chip CP and are adhered to the chip TE, and clamp at least the central part of the peripheral part of each wafer CP with the opposite ends, Compared with the central part, it is in a state in which it is easier to peel off from the wafer TE; the wafer supply device 10 supplies the wafer CP picked up from the wafer fixing frames RI2 and RI3; the wafer transport device 39 transports the wafer supply device 10. The supplied chip CP is transferred to the transfer position of the head 33H; and the buffer unit 9092. In addition, in FIG. 30 , the same structures as those in Embodiment 1 are assigned the same symbols as in FIG. 1 . The buffer unit 9092 can accumulate a plurality of sheet fixing frames RI2 and RI3. In addition, a standby unit 9091 in which the wafer fixing frames RI2 and RI3 are temporarily arranged is provided between the wafer peripheral peeling device 50 and the buffer unit 9092. In addition, the wafer bonding system 9 includes frame transfer devices 9093 and 9094. The standby unit 9091 has a frame mounting base 9911 on which the wafer fixing frames RI2 and RI3 are temporarily placed. The wafer fixing frames RI2 and RI3 are transported to the wafer supply unit 11 or the buffer unit 9092 of the wafer supply device 10 .

The buffer unit 9092 has a rack 9921 with a plurality of slots that can accommodate the sheet fixing frames RI2 and RI3; and a rack lifting drive part (not shown) that lifts and moves the rack 9921 in the Z-axis direction. The frame transfer device 9093 has the central portion adhered to the wafer body TE by the wafer peripheral portion peeling device 50, and clamps at least the central portion of the respective peripheral portions of the wafer CP with the opposite end portions. Compared with the central part, the wafer fixing frames RI2 and RI3 of the plurality of wafers CP are in a state that is easier to peel off from the wafer body TE than the central part, and are transported from the wafer peripheral part peeling device 50 to the buffer unit 9092 or the standby unit 9091. 1 frame handling device. The frame transfer device 9093 has a chuck part 9933 that holds the wafer fixing frames RI2 and RI3; an arm body 9932 with the chuck part 9933 fixed at the tip; and an arm driving part 9931 that moves the arm 9932 along the wafer periphery. The arrangement direction of the partial peeling device 50, the standby unit 9091 and the buffer unit 9092, that is, moves along the Y-axis direction.

The frame transport device 9094 is a second frame transport that transports the wafer fixing frames RI2 and RI3 arranged in the standby unit 9091 from the standby unit 9091 to a position where it is delivered to the frame support part 119 of the wafer supply device 10 device. The frame transfer device 9094 has a chuck part 9943 that holds the sheet fixed frames RI2 and RI3; an arm body 9942 with a chuck part 9943 fixed at the tip; and an arm drive part 9941 that moves the arm body 9942 along the standby unit. The arrangement direction of 9091 and the wafer supply part 11 of the wafer supply device 10, that is, moves along the X-axis direction.

The transfer robot 71 of the transfer device 70 has a function of inverting the front and back of the sheet fixing frames RI2 and RI3 by rotating the arm body 71a while holding the sheet fixing frames RI2 and RI3 with the arm 71a. Moreover, in this modification, it may be included in the wafer peripheral part peeling device 50 or outside the wafer peripheral part peeling device 50 , and may further include a frame inverting function having the function of reversing the front and back of the sheet fixing frames RI2 and RI3 device (not shown).

Next, the operation of the wafer bonding system 9 of this modification will be described using FIGS. 31A to 37 . In addition, in FIGS. 32A to 33B , the same structures as those in Embodiment 1 are assigned the same symbols as in FIGS. 10A to 11B . First, as shown in FIG. 31A , the transfer robot 71 of the transfer device 70 , as indicated by the arrow AR91 , holds the sheet fixing frames RI2 and RI3 with the arm 71 a and rotates the arm 71 a, thereby reversely The inside and outside of the rotor body fixed frames RI2 and RI3. Furthermore, the transfer robot 71 inserts the tip portion of the arm 71a holding the wafer fixing frames RI2 and RI2 into the wafer peripheral peeling device 50 by extending the arm 71a. Next, as shown by arrow AR101 in FIG. 32A , the transfer robot 71 rotates its arm body 71 a, thereby causing the surface of the wafer TE in the wafer fixing frames RI2 and RI3 to which the wafer CP is adhered, facing vertically downward. posture. Then, the transfer robot 71 transfers the wafer fixing frames RI2 and RI3 held at the tip portion of the arm 71a to the above-mentioned frame support portion 512 of the wafer peripheral peeling device 50, as shown by the arrow AR92 in Fig. 31B , contract the arm body 71a. Thereby, the wafer body fixing frames RI2 and RI3 are supported by the frame support part 512 of the wafer peripheral part peeling device 50 . Next, the wafer peripheral portion peeling device 50 performs the wafer peripheral portion peeling process described in the first embodiment. Specifically, first, the horizontal driving part 53 moves the frame support part 521 in the horizontal direction, as shown in FIG. 32B , so that the wafer peripheral part peeling device 50 is arranged vertically below the ultraviolet light irradiation part 55 . The state of the portion in TE corresponding to the peripheral portion of the wafer CP. Next, the ultraviolet light irradiation part 55 irradiates ultraviolet light UVL to the part of the body TE corresponding to the peripheral part of the wafer CP.

Next, the horizontal driving part 53 moves the frame supporting part 521 in the horizontal direction, as shown in FIG. 33A , and becomes a corresponding position in the wafer TE arranged vertically below the wafer pressing mechanism 56 of the wafer peripheral peeling device 50 The state of the peripheral portion of the wafer CP. Thereafter, the sheet pressing mechanism 56 of the wafer peripheral peeling device 50 moves, as shown by arrow AR52, against the pressing member 561 to the portion of the sheet TE corresponding to the peripheral portion of the wafer CP. The pressing member 561 moves in a direction perpendicular to the vertical direction, whereby the pressing member 561 rubs the plate body TE. Thereby, the central portion of each of the plurality of wafers CP is adhered to the sheet TE, and the peripheral portions of each of the plurality of wafers CP are peeled off from the sheet TE.

Next, the transfer robot 71 extends the arm 71 a again to insert the tip of the arm 71 a holding the wafer fixing frames RI2 and RI2 into the wafer peripheral peeling device 50 . Next, as shown in FIG. 33B , the transfer robot 71 rotates the arm body 71 a while holding the wafer fixing frames RI2 and RI3 from the side opposite to the wafer CP side in the wafer fixing frames RI2 and RI3. As a result, the surface of the chip TE in the chip fixing frames RI2 and RI3 to which the chip CP is adhered faces vertically upward. Then, the transfer robot 71 transports the wafer fixing frames RI2 and RI3 held at the tip portion of the arm body 71a to the above-mentioned frame support portion 512 of the wafer peripheral peeling device 50, and then retracts the arm as shown by arrow AR92. Body 71a.

Thereafter, as shown by arrow AR93 in FIG. 34A , the frame conveying device 9093 moves the arm body 9932 to a position where the sheet fixing frames RI2 and RI3 can be grasped by the chuck part 9933 , and then holds it by the chuck part 9933 Chip body fixed frames RI2, RI3. Next, as shown by arrow AR94 in FIG. 34B , the frame transport device 9093 further moves the arm 9932 in the −Y direction, thereby storing the sheet-fixed frames RI2 and RI3 in the rack 9921 of the buffer unit 9092 . The series of processes of transporting the sheet fixed frames RI2 and RI3 to the buffer unit is equivalent to the first frame transport process.

Here, the rack 9921, for example, as shown in FIG. 35A , has three slots SLT1, SLT2, and SLT3. Furthermore, the buffer unit 9092 is, for example, disposed with the rack 9921 so that the height of the slot SLT2 becomes approximately the same height as the frame mounting base 9911 of the standby unit 9091. In this state, the frame transport device 9093 moves the arm body 9932 in the -Y direction as shown by the arrow AR94, thereby receiving the sheet fixed frames RI2 and RI3 into the slot SLT2 of the rack 9921. Next, the frame transport device 9093 moves the arm body 9932 in the +Y direction, thereby detaching the arm body 9932 from the rack 9921. Thereafter, the buffer unit 9092 arranges the rack 9921 as shown by the arrow AR95 in FIG. 35B so that the rack 9921 is moved in the +Z direction and the height of the slot SLT1 becomes approximately the same height as the frame mounting base 9911 of the standby unit 9091. In this state, the frame transport device 9093 moves the arm body 9932 in the -Y direction as shown by arrow AR96, thereby receiving the sheet fixed frames RI2 and RI3 into the slot SLT3 of the rack 9921. In this way, by repeatedly executing the movement of the rack 9921 in the Z-axis direction and the reciprocating movement of the arm 9932 in the Y-axis direction, a plurality of sheet fixed frames RI2 and RI3 are accumulated in the rack 9921.

In addition, the frame transport device 9093 uses the chuck part 9933 to move the arm body 9932 to a position where the sheet fixed frames RI2 and RI3 accommodated by the rack 9921 can be grasped, and then the chuck part 9933 holds the sheet body. Fixed frames RI2, RI3. Next, as shown by arrow AR97 in FIG. 36A , the frame transport device 9093 moves the arm 9932 in the +Y direction, thereby pulling out the sheet fixing frames RI2 and RI3 from the rack 9921 and placing them on the frame carrier of the standby unit 9091 Set it on stage 9911. Next, the frame transport device 9093 releases the gripping state of the sheet fixed frames RI2 and RI3 made by the chuck portion 9933, as shown by the arrow AR98 in Figure 36B, and further moves the arm 9932 in the +Y direction, from the frame. The loading platform 9911 moves backward. After that, the frame transport device 9094, as shown by arrow AR99, uses the chuck portion 9943 to move the arm body 9942 in the +X direction until it can hold the sheet fixed frames RI2 and RI3 arranged in the standby unit 9091. , hold the sheet body fixing frames RI2 and RI3 at the chuck part 9943. Next, as shown by the arrow AR100 in FIG. 37 , the frame transport device 9094 moves the arm body 9942 in the −Y direction, thereby transporting the wafer fixed frames RI2 and RI3 to the frame support part 119 of the wafer supply part 11 . until the exit position. After that, the frame transfer device 9094 releases the holding state of the wafer fixing frames RI2 and RI3 by the chuck part 9943, thereby transporting the wafer fixing frames RI2 and RI3 to the frame support part 119 of the wafer supply part 11 . Transporting the sheet fixed frames RI2 and RI3 is a series of processes from the buffer unit to the frame support part 119, which is equivalent to the second frame transport process. Furthermore, the wafer bonding system 9 performs the wafer bonding process described in Embodiment 1. In this wafer bonding process, the wafer CP is bonded to the substrate WT by bringing the wafer CP into contact with the mounting surface WTf of the substrate WT.

Furthermore, in this modification, the wafer peripheral part peeling device 50 may also irradiate ultraviolet light UVL from the vertical lower side of the wafer fixing frames RI2 and RI3 to the peripheral part of the wafer TE corresponding to the wafer CP. After pressing the pressing member 561 from the vertical lower side of the wafer fixing frames RI2 and RI3 to the portion of the wafer TE corresponding to the peripheral portion of the wafer CP, the pressing member 561 is moved perpendicular to the vertical direction. direction, whereby the pressing member 561 rubs the disc body TE. In this case, there is no need to rotate the front and back of the sheet fixing frames RI2 and RI3.

Furthermore, in this modification, the plurality of sheet fixing frames RI2 and RI3 in the stage before the wafer peripheral peeling process is performed may be accumulated in the buffer unit 9092. In this case, the wafer peripheral part peeling device 50 only needs to perform the wafer peripheral part peeling process on the wafer fixing frames RI2 and RI3 transported from the buffer unit 9092.

As a result, in the wafer bonding method of this modification, first, a dicing process is performed to produce the diced substrate WD described in Embodiment 1; and a wafer bonding surface activation treatment process is performed to activate the wafer CP in the diced substrate WD. The joining surface CPf side; the stretching step is to stretch the sheet TE of the activated dicing substrate WD on which the joining surface CPf side of the chip CP is adhered, thereby causing a plurality of wafers CP to be in a state of being spaced apart from each other and fixed in the ring. The ring-shaped frames RI2, RI3; and the cleaning process, for the ring-shaped frames RI2, RI3 with the adhered wafers fixed in a state where the plurality of wafers CP are separated from each other, and the individual joint surfaces of the plurality of wafers CP are washed with water. CPf. Next, a wafer peripheral peeling process is performed. In a state where a plurality of wafers are spaced apart from each other, the annular frames RI2 and RI3 to which the adhered wafer TE is fixed become the central portions of individual wafers CP and are adhered to the wafer. The body TE, and the individual peripheral parts of the wafer CP are in a state in which it is easier to peel off from the body TE than the central part; the frame transfer process is to transport and fix the ring shape of the body TE with a plurality of wafers CP adhered to it The frames RI2 and RI3 go to the buffer unit 9092. The central part of the chip CP is adhered to the chip body TE, and the individual peripheral parts of the chip CP are in a state that is easier to peel off from the chip body TE than the central part; and In the frame transporting process, the annular frames RI2 and RI3 accumulated in the buffer unit 9092 are transported to the wafer supply device 10 . After that, proceed: wafer supply process, in the wafer peripheral peeling process, from the annular frame RI2, RI3 fixed with the body TE to which a plurality of wafers CP are adhered, support the peripheral portion vertically below to pick up, and cut out the wafer , the central part of the wafer CP is adhered to the chip body TE, and the individual peripheral parts of the wafer CP are in a state that is easier to peel off from the chip body TE than the central part; the wafer transportation process is carried out in the wafer supply In the process, the supplied wafer CP is conveyed to the transfer position of the head 33H while holding the side opposite to the bonding surface CPf side of the supplied wafer CP. The head 33H supports the substrate WT of the wafer CP at the tip portion. is bonded to the side opposite to the bonding surface CPf side of the mounting surface WTf; and in the bonding process, in a state where the wafer CP conveyed from the conveying position is held by the tip portion of the head 33H, the head 33H is moved to the table 31 side , so that the bonding surface CPf of the wafer CP contacts the mounting surface WTf of the substrate WT, and the wafer CP is bonded to the mounting surface WTf.

In this way, the wafer bonding surface activation process, the stretching process, the water cleaning process, the wafer peripheral peeling process, and the wafer supply process are carried out in order. By this, in the wafer bonding surface activation process, the wafer before the stretching process can be When the CPs are in contact or connected, they are activated, so the plastic originating from the chip body TE can be prevented from adhering to the joint surface CPf of the chip CP. In addition, after the stretching step, a water cleaning step is performed, whereby particles generated from the wafer CP and attached to the bonding surface CPf of the wafer CP can be removed by washing with water during the stretching step. In addition, by performing the wafer peripheral portion peeling process, the wafer CP can be picked up by holding the side opposite to the bonding surface CPf side of the wafer CP without contacting the bonding surface CPf of the wafer CP. Therefore, the wafer CP can be conveyed to the head 33H without coming into contact with the bonding surface CPf of the wafer CP. Therefore, the wafer CP can be bonded to the substrate WT satisfactorily. In addition, up to the activation process, processing is performed in a state where the sheet TE to which the dicing substrate WD is adhered is fixed to the annular frame RI1. In addition, after the stretching process, the plurality of wafers CP must be processed in a state where they are spaced apart from each other. In contrast, in this modification, after the stretching process, in order to maintain the stretched state of the sheet TE, the stretched sheet TE is fixed to the annular frames RI2 and RI3. After the sheet TE is stretched, status, proceed with processing. Thereby, in the processing after the stretching process, the sheet body TE shrinks and the wafers CP come into contact, thereby suppressing the generation of particles.

Moreover, the sheet TE in the stretched state is fixed by the annular frames RI2 and RI3, whereby the above-mentioned sheet fixing frame RI2 can be used while picking up the wafer CP adhered to the sheet TE. , RI3 returns to the buffer unit 9092, or is exchanged with the sheet fixed frames RI2 and RI3 accumulated by the buffer unit 9092. Thereby, the bonding process of the substrate WT to the chip CP can be continuously performed while exchanging multiple types of chip fixing frames RI2 and RI3. Therefore, small quantities of various chip mounting substrates can be efficiently produced.

In the modified example described with reference to FIG. 30 , the buffer unit 9092 may be omitted.

In Embodiment 2, for example, as shown in FIG. 38A , it may further include a wafer transfer part 10395 that transfers one of the wafers CP cut out by the pickup mechanism 2111 to the wafer transfer device 39 . In addition, in FIGS. 38A to 39 , the same structures as those in Embodiment 2 are assigned the same symbols as in FIGS. 20A and 20B . The wafer transfer part 10395 has: two arms 10395a, a hook 10395c that supports the wafer CP from vertically below is provided at the tip; and an arm driving part 10395b, with the respective base ends of the two arms 10395b as The fulcrum drives the two arm bodies 10395a to rotate.

In the wafer bonding system of this modification, when the tip of the needle body 2111a penetrates the wafer body TE to protrude the wafer CP vertically upward and is separated from the wafer body TE, as shown by arrow AR1001, the wafer transfer part 10395 The arm driving part 10395b rotates the two arms 10395a in the direction in which the two arms 10395a close, and hooks the hook 10395c at the tip of the arm 10395a on the vertically lower side of the wafer CP to hold it. Wafer CP. Next, as shown by arrow AR1002 in FIG. 38B , the wafer transfer unit 10395 moves vertically upward, thereby detaching the wafer CP from the tip portion of the needle 2111a. Next, as shown by arrow AR1003 in FIG. 39 , the wafer transfer unit 10395 moves the wafer CP to the transfer position of the wafer holding unit 393 at the tip of the arm 394 of the wafer transfer device 39 , and then swings the two sides open. An arm 10395a is provided to transport the wafer CP to the wafer holding part 393.

Furthermore, in this modification, an example has been described in which the rotation axis of the arm body 10395b is perpendicular to the extending direction of the wafer holding portion 393 of the wafer transport unit 39. However, the present modification is not limited to this, and the rotation axis of the arm body 10395b may be the same. The rotation axis is structured along the extending direction of the wafer holding portion 393 of the wafer transport portion 39 .

According to this structure, even if the gap in the vertical direction between the wafer body TE and the arm body 394 is relatively small, the wafer CP can be reliably transferred from the wafer body TE to the wafer holding part 393 of the arm body 394.

In the embodiment, the pickup mechanism 111 may have a collet 13115 that adsorbs and holds the wafer CP in a state of being in contact only with the peripheral edge of the bonding surface CPf of the wafer CP, as shown in FIG. 40 , for example. Furthermore, for example, for the wafer CP11 shown in FIG. 41A , the pickup mechanism 111 preferably has a contact surface when the step portion CPk11 is formed on the peripheral portion of the wafer CP11 on the bonding surface CPf side. The collet 11115 holding the wafer CP11 is attracted and held behind the corner portion P111 outside the step portion CPk11 on the bonding surface CPf11 side of the wafer CP11. For example, as shown in FIG. 41B , the pickup mechanism 111 preferably has a cylinder that adsorbs and holds the wafer CP11 in a state in which the lower part CPd11 of the segment CPk11 on the bonding surface CPf11 side of the wafer CP11 is in surface contact. Clip 12115.

According to these structures, the collets 11115, 12115, and 13115 can be suppressed from contacting the joint surfaces CPf and CPf11 of the wafers CP and CP11. Therefore, damage caused by defects in the peripheral portions of the joint surfaces CPf and CPf11 of the wafers CP and CP11 can be suppressed. This causes the particles to adhere to the joint surfaces CPf and CPf11.

In each embodiment, when the peripheral portion of the wafer CP is relatively easy to peel off from the body TE, the above-mentioned wafer peripheral portion peeling process may be omitted, and the wafer supply process may be performed as it is after the water cleaning process.

In the embodiment, for example, the example in which the electrode portion and the insulating portion are formed on the wafer CP is formed on the same bonding surface CPf, the invention is not limited to this. For example, the bonding surface CPf of the wafer CP may be formed. The whole part is formed with an electrode part or an insulating part.

In the embodiment, the example in which the adhesive force of the sheet TE is reduced by irradiating ultraviolet light to the sheet TE has been described. However, the invention is not limited to this. For example, as long as the adhesive force of the sheet TE is reduced by applying heat. , it may also include a far-infrared irradiation part having a far-infrared light source that irradiates far-infrared rays to the sheet TE instead of the ultraviolet light irradiation part 55.

In the embodiment, the substrate WT may be exposed in a state in which a conductive part made of a conductive material and an insulator part made of an insulator are formed on the mounting surface WTf so that they are approximately flush with each other. . Furthermore, the conductive part may protrude more than the insulating part. Furthermore, the electrode portion in the joint surface CPf of the wafer CP may protrude further than the insulating portion.

The present invention can be implemented in various embodiments and modifications without departing from the broad spirit and scope of the invention. In addition, the above-described embodiments are used to illustrate the present invention and do not limit the scope of the present invention. That is, the scope of the present invention is expressed not by the embodiments but by the patent claims. Furthermore, any modifications that may be implemented within the scope of the patent application and within the scope of the meaning of the equivalent invention are deemed to be within the scope of the present invention.

This application is based on Japanese Patent Application No. 2021-193779, which was filed on November 30, 2021. In this patent specification, the patent specification, patent scope and drawings of Japanese Patent Application No. 2021-193779 are incorporated by reference. [Industrial Applicability]

The present invention is suitable for the manufacturing of CMOS image detectors or memories, computing components, and MEMS, for example.

1: Wafer bonding system 10,2010,3010:wafer supply device 11,2011,3011: Chip Supply Department 30: Wiring device 31: Desk unit 33: Wiring Department 33H: Head 36:Head drive part 39: Wafer handling device 50: Wafer peripheral peeling device 53: Horizontal drive part 54: Particle suction department 54a:Suction nozzle 55,4055:UV irradiation part 56,4056:Blade pressing mechanism 57,4057: Wafer peripheral peeling part 60:Activation treatment device 64:Cavity 3064a:hole 70:Handling device 71:Handling robot 80: Moving in and out of the unit 85:Cleaning device 90:Control Department 100:Jointing device 111,2111,3111,4111,6111,7111: Picking up mechanism 113,2113,3113: Frame horizontal drive part 114,622: Cover 114a:hole 115,3115,5115:Collet 115a,9933,9943: Chuck head 119,521,621:Frame support part 120,2120: Frame lifting drive part 315:Table 320,853: Desk drive department 391:Plate body 392:Plate body driving part 393: Wafer holding part 394:Arm body 395,9931,9941,10395b: Arm driving part 411:wafer tool 411a, 411b: Through hole 413: Head body part 432a: Wafer support part 432b: Support part driving part 514,4514: Irradiation part pressing mechanism support part 515,4515: Cover support part 521a: Frame locking part 522:Latching part driving part 523:Base component 531,533: Slider 532,534: Orbit 551,4551:Light source 552,4552: Cover 561,4561: Press component 562,4562: Pressing member driving part 611: High frequency power supply 612:Body support part 613:Electrode 614: Matching unit 615:Plasma generation department 621: Frame support part 622: Cover 651:Exhaust pipe 652: Vacuum pump 676:Supply pipe 677:Gas Supply Department 851: Wash your hair 852:Table 2111a: Needle body 2111c: Needle driving part 5115a: Bernoulli chuck 6111b: Chip adsorption part 6121: Chip support part driving part 8041:Laser processing head 9091: Standby unit 9092: Buffer unit 9093,9094:Frame handling device 9911: Frame mounting table 9921:Rack 9931,9941: Arm drive part 10395: Chip transfer department 10395a:Arm body 10395c:Hook body ACP: Wafer forming area CP:chip CPf: joint surface TE:chip body OB1:Trajectory P81: Edge part PAS: Improvement Department PLM: Plasma RI1, RI2, RI3: ring frame WD: dicing substrate WT: substrate WTf: mounting surface

FIG. 1 is a schematic structural diagram of a wafer bonding system according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view of an example of a wafer in which the electrode portion and the insulating portion are flush with each other. Fig. 3 is a schematic structural diagram of the activation treatment device according to Embodiment 1. Fig. 4 is an operation explanatory diagram of the cleaning device according to the first embodiment. 5 is a schematic structural diagram of the wafer peripheral peeling device according to Embodiment 1. FIG. 6 is a schematic structural diagram of the chip supply device, the chip transfer device, and the wiring device of Embodiment 1 when viewed from the side. FIG. 7A is a top view of the wafer holding portion of Embodiment 1. FIG. 7B is a cross-sectional view showing a part of the wafer transfer device according to Embodiment 1. 8A is a cross-sectional view showing the head of the wire bonding device according to Embodiment 1. FIG. 8B is a plan view showing the head of the wire bonding device according to the first embodiment. FIG. 9 is a flow chart showing an example of the flow of the wafer bonding method according to the first embodiment. 10A is a schematic side view showing a state in which the portion corresponding to the peripheral portion of the wafer in the wafer body is irradiated with ultraviolet light in the wafer peripheral portion peeling device according to the first embodiment. FIG. 10B is a diagram showing the area irradiated with ultraviolet light in the sheet of Embodiment 1. FIG. 11A is a schematic side view showing a state in which a pressing member is pressed against a portion corresponding to the peripheral portion of the wafer in the wafer peripheral portion peeling device according to Embodiment 1. 11B is a schematic side view showing the state of the wafer peripheral peeling device according to Embodiment 1 after the pressing member is in contact with the wafer body. 11C is a schematic side view showing a state in which the peripheral portion of the wafer is peeled off by pressing with the pressing member using the wafer peripheral portion peeling device according to the first embodiment. 12A is a schematic plan view showing a state in which wafers are picked up in the wafer supply unit of the wafer bonding system according to Embodiment 1. 12B is a schematic side view showing a state in which wafers are picked up in the wafer supply unit of the wafer bonding system according to Embodiment 1. 13A shows a state in which a wafer is picked up in the wafer supply unit of the wafer bonding system according to Embodiment 1. The wafer is held in a collet and the annular frame is moved to the opposite side to the collet side. A picture of the state. 13B is a diagram showing a state in which a wafer is picked up in the wafer supply unit of the wafer bonding system according to Embodiment 1. It is a diagram showing a state after the peeling portion from the chip body in the wafer has progressed from the state shown in FIG. 13A . 13C is a diagram showing a state in which a wafer is picked up in the wafer supply unit of the wafer bonding system according to Embodiment 1, and is a diagram illustrating the state after the wafer is detached from the chip body. 14A is a schematic plan view showing a state in which wafers are supplied from a wafer supply unit in the wafer bonding system according to Embodiment 1. 14B is a schematic side view showing a state in which wafers are supplied from a wafer supply unit in the wafer bonding system according to Embodiment 1. FIG. 15A is a schematic plan view showing a state in which a wafer is transferred from a wafer transfer device to the head in the wafer bonding system of Embodiment 1. FIG. 15B is a schematic side view showing a state in which the wafer is transferred from the wafer transfer device to the head in the wafer bonding system according to the first embodiment. FIG. 16 is a schematic structural diagram of the chip supply device, the chip transport device, and the wiring device according to Embodiment 2 of the present invention, viewed from the side. FIG. 17 is a flowchart showing an example of the flow of the wafer bonding method according to Embodiment 2. 18A is a schematic side view showing a part of the wafer supply device according to Embodiment 2, showing a state in which ultraviolet light is irradiated to a portion corresponding to the peripheral portion of the wafer in the body. 18B is a schematic side view showing a part of the wafer supply device according to Embodiment 2, showing a state in which the pressing member is pressed to a portion corresponding to the peripheral portion of the wafer in the body. 19A is a schematic side view showing a part of the wafer supply device according to Embodiment 2, showing a state in which the tip of the contact needle reaches the chip body. 19B is a schematic side view showing a part of the wafer supply device according to Embodiment 2, showing a state after the pickup mechanism is moved vertically upward. 20A is a schematic side view showing a part of the wafer supply device according to Embodiment 2, showing a state after the wafer is detached from the body. 20B is a schematic side view showing a part of the wafer supply device according to Embodiment 2, showing a state in which the wafer is transferred to the wafer transfer device. 21A is a diagram illustrating a state in which the tip of the needle body is brought into contact with the chip body and then extruded in the wafer bonding method of the comparative example. 21B is a diagram showing a state in which the peripheral portion of the wafer rebounds and rises in the wafer bonding method of the comparative example. FIG. 22 is a schematic structural diagram of the chip supply device, the chip transfer device and the wiring device according to Embodiment 3 of the present invention, viewed from the side. 23A is a schematic side view showing a part of the wafer supply device according to Embodiment 3, showing a state in which ultraviolet light is irradiated to a portion corresponding to the peripheral portion of the wafer in the body. 23B is a schematic side view showing a part of the wafer supply device according to Embodiment 3, showing a state in which the pressing member is pressed to a portion corresponding to the peripheral portion of the wafer in the body. 24A is a schematic side view showing a part of the wafer supply device according to Embodiment 3, showing a state in which the wafer is held by the contact collet. 24B is a schematic side view showing a part of the wafer supply device according to Embodiment 3. The wafer is held in a collet and the annular frame is moved to the opposite side to the collet. . FIG. 25A is a schematic diagram showing the state of sneak dicing. FIG. 25B is a schematic diagram showing a state in which the dicing substrate is separated into wafers. 26A is a schematic side view of a wafer supply device according to a modified example. 26B is a schematic side view of a part of the wafer supply device according to the modified example. 27A is a schematic side view showing a part of a wafer supply device according to a modified example, showing a state in which ultraviolet light is irradiated to a portion corresponding to the peripheral portion of the wafer in the body. 27B is a schematic side view showing a part of the wafer supply device according to the modified example, showing a state in which the pressing member is pressed to a portion corresponding to the peripheral portion of the wafer in the body. FIG. 28 is a schematic side view of a wafer supply device according to a modified example. Fig. 29A is a schematic side view of a pickup mechanism according to a modified example. FIG. 29B is a schematic structural diagram of a pickup mechanism according to a modified example. FIG. 30 is a schematic structural diagram of a wafer bonding system according to a modified example. 31A is a schematic structural diagram showing a part of a wafer bonding system according to a modified example, and showing a state in which a transfer robot transports and fixes an annular frame with a wafer adhered thereon to a wafer peripheral peeling device. 31B is a schematic structural diagram showing a part of a wafer bonding system according to a modified example, and illustrating a state in which the annular frame to which the wafer body TE to which the wafer is adhered is fixed is placed in the wafer peripheral peeling device. 32A is a schematic diagram illustrating a state in which a transfer robot according to a modified example inverts and fixes the front and back of an annular frame to which a chip body TE attached to a chip is fixed. 32B is a schematic side view showing a state in which the wafer peripheral portion peeling device according to the modified example irradiates ultraviolet light to a portion corresponding to the peripheral portion of the wafer in the wafer body. 33A is a schematic side view showing a state in which the wafer peripheral portion peeling device according to the modification is pressed against the pressing member to a portion corresponding to the peripheral portion of the wafer in the body. 33B is a schematic diagram illustrating a state in which a transfer robot according to a modified example inverts and fixes the front and back of an annular frame to which a chip body TE attached to a chip is fixed. 34A shows a part of the wafer bonding system according to the modified example. It is a schematic diagram showing a state in which the transport unit transports the annular frame to which the wafer body TE to which the wafer is adhered is fixed from the wafer peripheral peeling device to the standby unit. Construction diagram. 34B is a schematic structural diagram showing a part of the wafer bonding system according to the modified example, and is a schematic structural diagram illustrating a state in which the transport unit transports the annular frame in which the wafer body TE to which the chip is adhered is fixed from the standby unit to the buffer unit. 35A is a schematic structural diagram showing a part of the wafer bonding system according to the modified example, and is a schematic structural diagram illustrating a state in which the transport unit transports the annular frame in which the wafer body TE to which the chip is adhered is fixed from the standby unit to the buffer unit. 35B is a schematic structural diagram showing a part of the wafer bonding system according to the modified example, and is a schematic structural diagram showing a state in which the transport unit transports the annular frame to which the wafer body TE to which the chip is adhered is fixed from the standby unit to the buffer unit. 36A is a schematic structural diagram showing a part of the wafer bonding system according to the modified example, and is a schematic structural diagram illustrating a state in which the transport unit transports the annular frame to which the wafer body TE to which the chip is adhered is fixed from the buffer unit to the standby unit. 36B is a schematic structural diagram showing a part of the wafer bonding system according to the modified example, and is a schematic structural diagram illustrating a state in which the transport unit transports the annular frame to which the wafer body TE to which the wafer is adhered is fixed from the standby unit to the wafer supply unit. 37 is a schematic structural diagram showing a part of the wafer bonding system according to the modified example, and is a schematic structural diagram showing a state in which the transport unit transports the annular frame to which the wafer body TE to which the wafer is adhered is fixed from the standby unit to the wafer supply unit. 38A is a schematic side view showing a part of a wafer supply device according to a modified example, showing a state after the wafer is detached from the chip body. 38B is a schematic side view showing a part of the wafer supply device according to the modified example, showing a state in which the wafer transfer unit holds the wafer. 39 is a schematic side view showing a part of a wafer supply device according to a modified example, showing a state in which a wafer is transferred to a wafer transfer device. Fig. 40 is a cross-sectional view of a collet according to a modified example. Fig. 41A is a cross-sectional view of a collet according to a modified example. Fig. 41B is a cross-sectional view of a collet according to a modified example.

50: Wafer peripheral peeling device

53: Horizontal drive part

54: Particle suction department

54a:Suction nozzle

55: UV irradiation part

56:Blade pressing mechanism

57: Wafer peripheral peeling part

511:Light source

512: Frame support part

514: Irradiation part pressing mechanism support part

515: Cover support part

521: Frame support part

521a: Frame locking part

522: Locking drive part

523:Base component

531:Slider

532:Orbit

533:Slider

534:Orbit

551:Light source

552:Cover body

552a:Window

561: Press component

562: Pressing member driving part

CP:chip

DW: dicing substrate

RI2, RI3: ring frame

TE:chip body

Claims (48)

A wafer peripheral peeling device, which includes: The frame support part supports an annular frame. The annular frame is fixed with a dicing substrate or a plurality of wafers adhered to the sheet body. The dicing substrate has a plurality of wafer formation areas that form the basis of the plurality of wafers by dicing. The plurality of wafers of the substrate are formed as portions between areas; and The wafer peripheral peeling part, the central part of each of the plurality of wafer formation areas in the dicing substrate or the central part of the plurality of individual wafers is adhered to the sheet body, and clamps the central part of each of the plurality of wafer formation areas. Or at least the central portion among the peripheral portions of each of the plurality of wafers has two opposite end portions, which are in a state that is easier to peel off from the sheet body than the central portion. The wafer peripheral peeling device of claim 1, wherein the sheet body is an adhesive whose adhesive force is reduced at least when irradiated with ultraviolet light, and the dicing substrate or the plurality of wafers are adhered, The wafer peripheral peeling portion has a portion corresponding to the peripheral portion of the plurality of wafer formation areas in the sheet body or the peripheral portion of the plurality of wafers by irradiating ultraviolet light to separate the peripheral portions of the plurality of wafer formation areas. Or the peripheral portion of each of the plurality of wafers becomes an ultraviolet irradiation portion in a state in which it is easier to peel off from the sheet body than the central portion. The wafer peripheral peeling device of claim 1 or 2, wherein the wafer peripheral peeling part has: The pressing member has a tip portion that presses a portion corresponding to the peripheral portion of each of the plurality of wafer formation areas or the peripheral portion of each of the plurality of wafers in the sheet body; and The pressing member driving part presses the pressing member to a portion corresponding to the peripheral portion of each of the plurality of wafer formation areas in the sheet body or the portion of the peripheral portion of each of the plurality of wafers, thereby causing the individual plurality of wafer formation areas. The peripheral portion or the peripheral portion of each of the plurality of wafers is in a state in which it is easier to peel off from the sheet body than the central portion. The wafer peripheral peeling device of claim 3, wherein the pressing member driving part, when pressing against the pressing member, reaches the peripheral portion corresponding to the individual wafer formation areas in the sheet body or the individual wafers. In the state of the partial position, the pressing member is moved in a direction perpendicular to the pressing direction of the pressing member, thereby rubbing the sheet body with the pressing member, so that the plurality of wafers form individual peripheral portions or the The peripheral portions of individual wafers are in a state in which they are more easily peeled off from the sheet body than the central portion. The wafer peripheral peeling device of claim 1 or 2, wherein the frame support portion supports the annular frame in an attitude in which the surface side of the dicing substrate or the plurality of wafers in the body is adhered to faces vertically downward. . The wafer peripheral peeling device according to claim 1 or 2, further comprising a particle suction part, the particle suction part serves as the wafer peripheral peeling part to form individual peripheral parts of the plurality of wafers or individually of the plurality of wafers. When the peripheral portion is peeled off from the sheet, particles generated from the dicing substrate or the plurality of wafers are attracted from vertically below the sheet. The wafer peripheral peeling device according to claim 1 or 2, wherein the dicing substrate is formed with a plurality of wafer forming areas on which portions between the plurality of wafer forming areas are formed by a submersible dicing method. And slicing is used to form it. The wafer peripheral peeling device according to claim 1 or 2, wherein the dicing substrate is such that the portions between the plurality of wafer forming areas of the substrate on which the plurality of wafer forming areas are formed as the basis of the plurality of wafers are diced by plasma. The method is used to slice and form it. The wafer peripheral peeling device of claim 1 or 2, wherein the wafer is formed with an electrode portion and an insulating portion in the same joint surface that is bonded to the substrate. A wafer supply system including: A wafer peripheral peeling device having a frame support portion supporting an annular frame to which a sheet body is fixed, and the sheet body is adhered to a plurality of substrates forming a plurality of wafer formation areas that serve as a basis for the plurality of wafers. The portion between the wafer formation areas is the dicing substrate or the plurality of wafers formed by dicing; and the wafer peripheral peeling portion is the central portion of the plurality of wafer formation areas in the dicing substrate or the center of each of the plurality of wafers. The portion is adhered to the sheet body, and clamps at least the central portion of the individual wafer formation areas or the peripheral portions of the plurality of wafers with two opposite end portions, which are compared with the central portion down, becoming a state in which it is easier to peel off from the sheet; and The wafer supply device has a pick-up mechanism that presses the central part of the wafer toward the one side from the other side of the sheet body opposite to the one side to which the wafer is adhered, thereby scratching the wafer. The sheet body is bent, and the wafer is cut out from the sheet body in a state where the peripheral portion of the wafer is peeled off from the sheet body. The wafer supply system of claim 10, further comprising a wafer transfer part, the wafer transfer part uses the pick-up mechanism to make one of the cut out wafers be bonded to the substrate by the bonding of the wafer The surface side, facing vertically upward, is held by a hook that supports the wafer from vertically below, and the wafer is transported to a wafer transfer device that transports the wafer while holding the side opposite to the bonding surface side. , The hook system retains a peripheral portion of the wafer on a side opposite the bonding surface side. A wafer supply system for bonding wafers to a substrate, characterized by: It includes: An activation processing device that activates the portions between the plurality of wafer forming areas of the substrate provided with the plurality of wafer forming areas that are adhered to the chip body and become the basis of the wafer, and activates the wafer in the diced substrate produced by dicing. joint surface side; The cleaning device is used to clean the piece of the dicing substrate that has been activated by stretching the bonding surface side to which the chip is adhered, and in a state where the plurality of chips are spaced apart from each other, and is directed to the piece to which the adhered piece is fixed. The annular frame is used to clean multiple individual joint surfaces of the chip with water; The wafer peripheral peeling device, in a state where the plurality of wafers are spaced apart from each other, adheres the central part of each wafer to the wafer body and clamps the annular frame to which the adhered wafer body is fixed. At least the central portion and the two opposing end portions of the individual peripheral portions of the wafer are in a state after being peeled off from the sheet body; and The wafer supply device supplies the wafers picked up from the annular frame. The central part of the annular frame is adhered to the wafer body by the wafer peripheral peeling device, and in the peripheral parts of the individual wafers, At least the two opposite end portions of the central portion are fixed with a sheet body to which a plurality of chips are adhered, in a state that is easier to peel off from the sheet body than the central portion. A wafer supply device that supplies wafers bonded to a substrate is characterized by: These include: The frame support part supports and fixes an annular frame with a sheet body, which is formed by adhering a portion between the plurality of wafer forming areas of a substrate formed by dicing to form a plurality of wafer forming areas that are the basis of a plurality of wafers. the dicing substrate or the plurality of wafers; The wafer peripheral peeling part is a central part of each of the plurality of wafer formation areas in the dicing substrate or a central part of each of the plurality of wafers. It is adhered to the sheet body and clamps the central part of each of the plurality of wafer formation areas. Or at least the central portion among the peripheral portions of each of the plurality of wafers has two opposite end portions, which are in a state that is easier to peel off from the sheet body than the central portion; and The pick-up mechanism presses the central part of the wafer toward the one side from the opposite side of the wafer to which the wafer is adhered, thereby bending the wafer body, and the periphery of the wafer The wafer is cut out from the wafer body in a state where the wafer part is peeled off from the wafer body. The chip supply device of claim 13, wherein the chip body is made of an adhesive whose adhesive force is reduced at least when it is irradiated with ultraviolet light, and the chip is adhered, The wafer peripheral peeling part has an ultraviolet light irradiation part, and the ultraviolet light irradiation part irradiates ultraviolet light to a part of the sheet body corresponding to the peripheral part of the wafer, whereby the peripheral part of the wafer is Compared with the central part, it is in a state where it is easier to peel off from the sheet body. The wafer supply device of claim 13 or 14, wherein the wafer peripheral peeling part has: a pressing member that presses the portion of the sheet corresponding to the peripheral portion of the wafer; and The pressing member driving part presses the pressing member to a portion of the sheet body corresponding to the peripheral portion of the wafer, whereby the peripheral portion of the wafer becomes easier to separate from the wafer than the central portion. The state of body peeling. The wafer supply device of claim 15, wherein the pressing member driving part moves the pressing member toward a portion of the sheet body corresponding to the peripheral portion of the wafer after pressing the pressing member. In a direction perpendicular to the pressing direction of the pressing member, the pressing member rubs the sheet body, and the peripheral portion of the wafer becomes easier to peel off from the sheet body than the central portion. The wafer supply device of Claim 13 or 14, which further includes a wafer peripheral peeling unit that causes the peripheral portions of the plurality of wafers to be in a state after being peeled off from the wafer body, and when the pickup mechanism is peeled off from the wafer body. When the body is separated from the plurality of wafers, at least one of the particle attracting parts attracts particles generated by the plurality of wafers from vertically below the body. The wafer supply device of claim 13 or 14, wherein the pickup mechanism holds the bonding surface side of the wafer bonded to the substrate in a non-contact manner to pick it up. The wafer supply device of claim 18, wherein the pick-up mechanism presses the central part of the wafer toward the one side from the other side of the sheet body opposite to the side where the wafer is adhered, thereby , bending the sheet body, and retaining the peripheral portion of the wafer on the side opposite to the bonding surface side in a state where the peripheral portion of the wafer is peeled off from the sheet body. The wafer supply device of claim 13 or 14, wherein the pick-up mechanism has: a chuck portion that adsorbs and holds the joint surface of the wafer that is bonded to the substrate; and a cleaning portion that cleans the chuck portion; Before the wafer is sucked and held by the chuck part, the chuck part is cleaned by the cleaning part. The wafer supply device of claim 13 or 14, wherein the wafer has an electrode portion and an insulating portion formed in the same bonding surface that is bonded to the substrate. The wafer supply device of claim 13 or 14, wherein the dicing substrate is formed by dicing a portion between the plurality of wafer forming areas of the substrate having the plurality of wafer forming areas that serve as the basis of the plurality of wafers by means of a submersible dicing method. be formed. The wafer supply device of Claim 13 or 14, wherein the dicing substrate is diced by a plasma dicing method to form portions between the plurality of wafer formation areas of the substrate having the plurality of wafer formation areas that serve as the basis for the plurality of wafers. And be formed. A wafer bonding system for bonding wafers to substrates, characterized by: These include: The chip supply department supplies the chips; The head allows the tip portion to support the side opposite to the bonding surface side of the chip that is bonded to the mounting surface of the substrate; The wafer transfer device carries the wafer supplied from the wafer supply unit on the opposite side to the bonding surface side until the wafer is transferred to the transfer position of the head; a substrate holding portion that holds the substrate; and The head driving part relatively moves the head in a state where the wafer transferred from the wafer transfer device is held by the tip part of the head, and contacts the first direction from the head to the substrate holding part. a bonding surface of the wafer to the mounting surface of the substrate, to bond the wafer to the mounting surface, The chip supply department has: The frame support part supports and fixes the annular frame with the chip body adhered to it; a wafer peripheral peeling portion, in which the central portion of the wafer is adhered to the sheet body, and the peripheral portion of the wafer is in a state in which it is easier to peel from the sheet body than the central portion; and The pick-up mechanism holds any one of the plurality of chips from one side of the chip body to which the plurality of chips are adhered, and at the same time moves the chip body to the other side opposite to the one side, thereby , in a state where the sheet body is bent and the peripheral portion of the one wafer is peeled off from the sheet body, the one wafer is cut out from the sheet body. The wafer bonding system of claim 24, wherein the wafer transfer device has a wafer holding part that holds the wafer supplied from the wafer supply part on the bonding surface side of the substrate in a non-contact manner, and the wafer holding part, While holding the wafer, it is transported until the wafer is transferred to the transfer position of the head. The wafer bonding system of claim 25, wherein the wafer holding portion holds a peripheral portion of the wafer on a side opposite to the bonding surface side. The wafer bonding system of claim 24, further comprising a wafer transfer part that allows one of the wafers cut out by the pickup mechanism to be connected to the bonding surface side of the wafer that is bonded to the substrate. , facing vertically upward, with the wafer being held by the hook supported from vertically downward, and then transported to the wafer transfer device. The wafer bonding system of any one of claims 24 to 27, wherein the wafer has an electrode portion and an insulating portion formed on the same bonding surface, The head driving part is in surface contact with the bonding surface of the wafer to the mounting surface, and is surface bonded with the wafer to the mounting surface. A wafer bonding system for bonding wafers to substrates, characterized by: These include: The wafer peripheral peeling device is directed to an annular frame fixed with a plurality of wafers adhered to the wafer body. The central portion of each wafer is adhered to the wafer body, and clamps at least one of the peripheral portions of the individual wafers. The central portion and the two opposite end portions are in a state after being peeled off from the sheet body; The wafer supply device supplies the wafer from an annular frame fixed with a plurality of wafers adhered to the wafer body, so that the peripheral part of at least one wafer is peeled off from the wafer body to pick up the wafer. The wafer is automatically By the wafer peripheral part peeling device, the central part is adhered to the sheet body, and at least the central part among the individual peripheral parts of the wafer is clamped with two opposite end parts, which are compared with the central part. Become in a state that is easier to peel off from the sheet; The head allows the tip portion to support the side opposite to the bonding surface side of the chip that is bonded to the mounting surface of the substrate; The wafer transfer device carries the wafer supplied from the wafer supply device on the opposite side of the bonding surface until the wafer is transferred to the transfer position of the head; a substrate holding portion that holds the substrate; and The head driving part moves the head relatively in a state where the wafer transferred from the wafer transfer device is held by the tip part of the head, and contacts the head in the first direction from the head to the substrate holding part. a bonding surface of the wafer to the mounting surface of the substrate, to bond the wafer to the mounting surface, The wafer supply device has a pick-up mechanism. The pick-up mechanism starts from the side of the wafer body to which the wafer is adhered. While holding the wafer, the pick-up mechanism moves the wafer body to the other side opposite to the one side side. Thereby, the wafer is cut out from the sheet body in a state where the sheet body is bent and the peripheral portion of the wafer is peeled off from the sheet body. Such as the wafer bonding system of claim 29, which also includes: The buffer unit can accumulate and fix a plurality of annular frames with a plurality of sheets of the chip adhered thereto; The standby unit is fixed with an annular frame on which the plurality of chips are adhered, and is temporarily configured; The first frame transport device transports the annular frame in which a plurality of wafers are adhered to the wafer body from the wafer peripheral part peeling device to the buffer unit or the standby unit, and the wafer is transported by the wafer peripheral part The peeling device has a central portion adhered to the wafer body, and clamps at least the central portion of the individual peripheral portions of the wafer with two opposite end portions in a state of being peeled off from the wafer body; and The second frame transport device transports an annular frame fixed with a plurality of wafer sheets arranged in the standby unit from the standby unit to the wafer supply device. A wafer bonding system for bonding wafers to substrates, characterized by: These include: An activation processing device activates the bonding surface side of the wafer in a dicing substrate that is provided with a plurality of wafers in a plurality of wafer formation areas that are adhered to the wafer body and become the basis of the wafer. Made from parts that form between realms; The cleaning device is directed to the piece of the dicing substrate that has been activated by stretching the joint surface side to which the chip is adhered, and in a state where a plurality of the chips are spaced apart from each other, a ring to which the piece is adhered is fixed. Shape frame, wash multiple individual joint surfaces of the chip with water; The wafer peripheral peeling device is for fixing the annular frame with the adhered wafer body in a state where a plurality of wafers are spaced apart from each other, and the central part of each wafer is adhered to the wafer body, and is sandwiched Hold at least the central portion of the individual peripheral portions of the wafer and its two opposite end portions in a state after being peeled off from the sheet body; The wafer supply device supplies the wafer picked up from an annular frame fixed with a plurality of wafers adhered to the wafer body, and the central part of the wafer is adhered to the wafer body by the wafer peripheral peeling device, and, Clamp at least the central portion and the two opposite end portions of the individual peripheral portions of the wafer so that, compared with the central portion, it is in a state that is easier to peel off from the sheet body; The head allows the tip portion to support the side opposite to the bonding surface side of the chip that is bonded to the mounting surface of the substrate; The wafer transfer device carries the wafer supplied from the wafer supply device on the opposite side of the bonding surface until the wafer is transferred to the transfer position of the head; a substrate holding portion that holds the substrate; and The head driving part relatively moves the head in a first direction from the head to the substrate holding part in a state where the wafer transferred from the wafer transfer device is held by the tip part of the head, so as to The bonding surface of the wafer is contacted with the mounting surface of the substrate to bond the wafer to the mounting surface. A picking device that picks up wafers bonded to a substrate, characterized by: These include: a collet that adsorbs and retains the bonding surface of the wafer that is bonded to the substrate; and Collet cleaning part, cleans the collet, The collet cleaning part uses the collet to clean the collet before adsorbing and holding the wafer. A wafer peripheral peeling method, which includes a peripheral peeling process in which a dicing substrate or a plurality of wafers are adhered to an annular frame in a state where the dicing substrate is supported and fixed. The respective central portions of the plurality of chip formation areas or the respective central portions of the plurality of wafers are adhered to the sheet body, and sandwich the individual central portions of the plurality of wafer formation areas or the plurality of wafers. At least the central portion of the peripheral portion has two opposite end portions, which are in a state that is easier to peel off from the sheet body than the central portion. The dicing substrate is formed with a plurality of wafers by dicing. A plurality of wafer forming areas are formed as a basis of the substrate, and the plurality of wafer forming areas are formed by portions between the areas. As claimed in Claim 33, the chip peripheral peeling method, wherein the chip body is made of an adhesive whose adhesive force is reduced at least when it is irradiated with ultraviolet light, and the chip is adhered, In the peripheral portion peeling step, ultraviolet light is irradiated to a portion of the sheet body corresponding to the peripheral portion of the wafer, thereby causing the peripheral portion of the wafer to be peeled off from the sheet body. The wafer peripheral peeling method of claim 33 or 34, wherein in the peripheral peeling process, the pressing member that presses the portion of the sheet body corresponding to the peripheral portion of the wafer is pressed against the portion of the sheet body. The portion corresponding to the peripheral portion of the wafer allows the peripheral portion of the wafer to be in a state in which it is easier to peel off from the sheet body than the central portion. The wafer peripheral peeling method of claim 35, wherein in the peripheral peeling process, the pressing member is moved to a state after pressing the pressing member to a portion of the sheet body corresponding to the peripheral portion of the wafer. The member rubs the sheet body with the pressing member in a direction perpendicular to the pressing direction of the pressing member, so that the peripheral portion of the wafer becomes easier to peel off from the sheet body than the central portion. A wafer peripheral peeling method, which includes: The dicing process is to produce a diced substrate by dicing a portion between a plurality of wafer forming areas of a substrate provided with a plurality of wafer forming areas that are adhered to the chip body and serve as the basis of the wafer; A cleaning process, after the dicing process, by stretching the joint surface of the dicing substrate or the sheet body to which the dicing substrate is adhered, cleaning the joint surfaces of the individual wafers produced; and In the peripheral peeling process, after the cleaning process, the central portion of each of the plurality of wafer formation areas or the respective central portions of the plurality of wafers in the dicing substrate is adhered to the sheet body, and the plurality of wafers are clamped At least the central portion of each formed area or the peripheral portions of the plurality of individual wafers has two opposite end portions, which are in a state that is easier to peel off from the sheet than the central portion. The wafer peripheral peeling method of Claim 33 or 34, wherein the dicing substrate is diced by a submersible dicing method to form a plurality of wafer formation areas between the plurality of wafer formation areas of the substrate forming the basis of the plurality of wafers. formed from parts. A wafer supply method for supplying wafers bonded to a substrate, characterized by: It contains: In the peripheral peeling process, in a state where a ring-shaped frame supporting and fixing a sheet body on which a plurality of chips is adhered is supported and fixed, the central portion of each of the plurality of chips is adhered to the sheet body, and the peripheral portion of each of the plurality of wafers is adhered to the sheet body. Compared with the central part, it is in a state that is easier to peel off from the sheet body; and In the picking process, from the side of the sheet body to which the plurality of chips are adhered, while holding any one of the plurality of chips, the sheet body is moved to the other side opposite to the one side, whereby, The one wafer is cut out from the sheet body in a state where the sheet body is bent and the peripheral portion of the one wafer is peeled off from the sheet body. The wafer supply method of Claim 39, wherein in the picking process, the bonding surface side of the wafer that is bonded to the substrate is held for picking up in a non-contact manner. The wafer supply method of claim 40, wherein in the picking process, the central part of the wafer is pressed toward the one side from the other side of the sheet body opposite to the side where the wafer is adhered, thereby , in a state where the sheet body is bent and the peripheral portion of the wafer is peeled off from the sheet body, the peripheral portion of the wafer on the side opposite to the bonding surface side is held. For example, the wafer supply method of claim 39 or 40, wherein in the picking-up process, the collet that is bonded to the bonding surface of the substrate is held by adsorption, and the collet is cleaned by the collet before adsorbing and holding the wafer. and clean the collet. A picking method for picking up wafers bonded to a substrate, characterized by: It contains: The adsorption and holding process is to adsorb and hold the bonding surface of the chip that is bonded to the substrate; and In the collet cleaning process, the collet is cleaned before the wafer is adsorbed and held by the collet. A wafer bonding method for bonding wafers to substrates, characterized by: It contains: The wafer peripheral peeling process involves fixing an annular frame with a plurality of wafers adhered to the wafer body. The central portion of each wafer is adhered to the wafer body, and at least one of the peripheral portions of the individual wafers is clamped. The central portion has two opposite end portions, which are in a state that is easier to peel off from the sheet body than the central portion; In the wafer supply process, in the wafer peripheral peeling process, the wafer is picked up and supplied from the annular frame, which is supported vertically downward, and the annular frame is fixedly adhered and the central part is adhered to the wafer body, and , clamping at least the central portion of the individual peripheral portions of the wafer and the two opposing end portions, a plurality of pieces of the wafer in a state in which it is easier to peel away from the piece than the central portion; In the wafer transfer process, in the wafer supply process, the supplied wafer is held on the side opposite to the bonding surface side where it is bonded to the mounting surface of the substrate, and then the wafer is conveyed to a point supported on the tip portion. to the transfer position of the head on the opposite side of the bonding surface side of the wafer; and In the bonding process, in a state where the wafer transferred from the transfer position is held by the tip of the head, the head is relatively moved in a first direction from the head to the substrate to contact the wafer. The bonding surface is to the mounting surface of the substrate to bond the wafer to the mounting surface. Such as the wafer bonding method of claim 44, which also includes: The first frame transfer process involves transporting an annular frame fixed with a plurality of wafers adhered to it to a buffer unit that can accumulate a plurality of the annular frames fixed with a plurality of wafers adhered to it. The central portions of the plurality of wafers are adhered to the sheet body, and it is easier to clamp at least the central portion and the opposite end portions among the peripheral portions of each of the wafers than the central portion. The state of being peeled off from the sheet; and The second frame transport process is to transport the ring-shaped frames accumulated in the buffer unit to a position where the wafer is cut out in the wafer supply process. A wafer bonding method for bonding wafers to substrates, characterized by: It contains: The dicing process is to produce a diced substrate by dicing the portion between the plurality of wafer forming areas of the substrate provided with the plurality of wafer forming areas that are adhered to the chip body and serve as the basis of the wafer; An activation treatment process activates the joint surface side of the wafer in the dicing substrate; The stretching process is to stretch the piece of the dicing substrate to which the joint surface side of the chip has been activated, so that the plurality of chips are spaced apart from each other and fixed to the annular frame; The cleaning process involves washing the individual joint surfaces of the plurality of chips with water on the annular frame to which the adhered chip body is fixed in a state where the plurality of chips are spaced apart from each other; The wafer peripheral peeling process involves fixing the annular frame with the adhered wafer body in a state where a plurality of wafers are spaced apart from each other, and the central portion of each wafer is adhered to the wafer body, and is sandwiched Holding at least the central portion of the individual peripheral portions of the wafer and its two opposite end portions, the wafer is in a state in which it is easier to peel off from the wafer body than the central portion; In the wafer supply process, in the wafer peripheral peeling process, the wafer is picked up and supplied from the annular frame, which is supported vertically downward, and the annular frame is fixedly adhered and the central part is adhered to the wafer body, and , clamping at least the central portion of the individual peripheral portions of the wafer and the two opposing end portions, a plurality of pieces of the wafer in a state in which it is easier to peel away from the piece than the central portion; In the wafer supplying process, the wafer is transported to the transfer position of the head supported by the tip portion while holding the side opposite to the bonding surface side of the supplied wafer. the side of the chip that is opposite to the bonding surface side of the mounting surface of the substrate; and In the bonding process, in a state where the wafer transferred from the transfer position is held by the tip of the head, the head is relatively moved in a first direction from the head to the substrate to contact the wafer. A bonding surface to the mounting surface of the substrate to bond the wafer to the mounting surface. A wafer supply method for bonding wafers to a substrate, characterized by: It contains: The dicing process is to produce a diced substrate by dicing the portion between the plurality of wafer forming areas of the substrate provided with the plurality of wafer forming areas that are adhered to the chip body and serve as the basis of the wafer; An activation treatment process activates the joint surface side of the wafer in the dicing substrate; The stretching process is to stretch the piece of the dicing substrate adhered to the activated joint surface side of the chip so that the plurality of chips are spaced apart from each other and fixed to the annular frame; The cleaning process involves washing the individual joint surfaces of the plurality of chips with water on the annular frame to which the adhered chip body is fixed in a state where the plurality of chips are spaced apart from each other; The wafer peripheral peeling process involves fixing the annular frame with the adhered wafer body in a state where a plurality of wafers are spaced apart from each other, and the central portion of each wafer is adhered to the wafer body, and is sandwiched Holding at least the central portion of the individual peripheral portions of the wafer and two opposing end portions, the wafer is in a state in which it is easier to peel off from the sheet body than the central portion; and In the wafer supply process, in the wafer peripheral peeling process, the wafer is picked up and supplied from the annular frame, which is supported vertically downward, and the annular frame is fixedly adhered and the central part is adhered to the wafer body, and , clamping at least the central portion of the individual peripheral portions of the wafer and the two opposite end portions, the plurality of wafer pieces are in a state in which they are easier to peel off from the piece body than the central portion. A wafer supply method for bonding wafers to a substrate, characterized by: It contains: The dicing process is to produce a diced substrate by dicing the portion between the plurality of wafer forming areas of the substrate provided with the plurality of wafer forming areas that are adhered to the chip body and serve as the basis of the wafer; An activation treatment process activates the joint surface side of the wafer in the dicing substrate; The stretching process is to stretch the piece of the dicing substrate adhered to the activated joint surface side of the chip so that the plurality of chips are spaced apart from each other and fixed to the annular frame; The cleaning process involves washing the individual joint surfaces of the plurality of wafers with water for the annular frame to which the adhered wafer body is fixed in a state where the plurality of wafers are spaced apart from each other; and In the wafer supply process, after the cleaning process, the wafers are picked up and supplied from a ring-shaped frame fixed with a plurality of wafers adhered to them, supported vertically below.

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